CN115627454A - Film deposition method, film and memory - Google Patents
Film deposition method, film and memory Download PDFInfo
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- CN115627454A CN115627454A CN202211337053.3A CN202211337053A CN115627454A CN 115627454 A CN115627454 A CN 115627454A CN 202211337053 A CN202211337053 A CN 202211337053A CN 115627454 A CN115627454 A CN 115627454A
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- 238000000151 deposition Methods 0.000 title claims description 20
- 239000010408 film Substances 0.000 claims abstract description 300
- 238000006243 chemical reaction Methods 0.000 claims abstract description 127
- 239000012495 reaction gas Substances 0.000 claims abstract description 73
- 239000010409 thin film Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000007736 thin film deposition technique Methods 0.000 claims abstract description 19
- 230000007423 decrease Effects 0.000 claims abstract description 17
- 230000009471 action Effects 0.000 claims abstract description 13
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 65
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 37
- 229910000077 silane Inorganic materials 0.000 claims description 37
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 27
- 230000003247 decreasing effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 48
- 229940094989 trimethylsilane Drugs 0.000 description 63
- 238000010586 diagram Methods 0.000 description 21
- 238000001039 wet etching Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 silicon alkoxide Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The disclosure provides a thin film deposition method, a thin film and a memory, wherein the thin film deposition method comprises the following steps: providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity; filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity; the flow rate of the first reaction gas is increased or reduced in a gradient manner, so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of the radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate; the carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films. Because the content of the carbon element in the film is related to the etching selectivity, the carbon element in the N layers of films formed by the scheme is changed in sequence, so that at least one layer of film in the N layers of films can adapt to the previous etching condition, and the structure of the film is still stable after the at least one layer of film is etched under the corresponding etching condition.
Description
Technical Field
The present disclosure relates to, but is not limited to, a thin film deposition method, a thin film and a memory.
Background
Currently, in the process of manufacturing a semiconductor device, a deposition process is generally used to form a desired thin film. Which comprises the following steps: FERSCO thin films. Fesco films (SiCN films) are widely used for etch stop layers and capacitor support layers in Dynamic Random Access Memory (DRAM) fabrication. When the etching rate of the SiCN film is large, the supporting layer formed by the SiCN film is thin, which may cause the underlying texture to be bent. When the SiCN film is etched at a low rate, the SiCN film becomes hard and the bottom of the SiCN film may become underetched and open in the base structure as the etching rate decreases. Therefore, the related art SiCN thin film is difficult to adapt to different etching conditions, and tends to cause instability in the thin film structure in the face of mismatched etching rates.
Disclosure of Invention
The thin film deposition method, the thin film and the memory provided by the embodiment of the disclosure can improve the adaptability of the formed thin film to different etching conditions and the stability of the thin film structure.
The technical scheme of the disclosure is realized as follows:
the embodiment of the disclosure provides a film deposition method, which includes:
providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity;
filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity;
the flow of the first reaction gas is increased or decreased in a gradient manner, so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of a radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate; the carbon element content in the N layers of films is increased or decreased progressively along the growth direction of the N layers of films; n is an integer greater than 1.
In the above scheme, the first reactive gas includes: trimethylsilane; the second reactive gas includes: a mixed gas of silane and ammonia gas; the N-layer film includes: a silicon carbon nitride film.
In the foregoing solution, the gradient increases or decreases the flow rate of the first reactive gas, so that the first reactive gas and the second reactive gas react in the reaction chamber under the action of the radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate, including:
filling the first reaction gas into the reaction cavity according to a preset flow rate, and carrying out plasma enhanced chemical vapor deposition reaction on the first reaction gas and the second reaction gas in the reaction cavity so as to deposit and form a first layer of film on the semiconductor substrate;
reducing the preset flow rate to a first flow rate according to a preset proportion, so that the first reaction gas and the second reaction gas which are filled into the reaction cavity at the first flow rate carry out the plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing on the first layer of film to form a second layer of film;
and reducing the first flow rate to a second flow rate according to the preset ratio, so that the first reaction gas and the second reaction gas which are filled into the reaction cavity in the second flow rate carry out the plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further a third layer of film is deposited on the second layer of film.
In the above scheme, the deposition rate of each of the N layers of films is: 1nm/s to 5nm/s.
In the scheme, the reaction temperature in the reaction cavity is 500-550 ℃; the radio frequency power of the radio frequency generator is 300W to 400W.
In the above scheme, the flow ratio of the silane to the trimethylsilane in the reaction chamber is 2 to 4; the flow rate of the ammonia gas is 400sccm to 500sccm.
In the above scheme, the reaction chamber further comprises: carrying gas; the flow rate of the carrier gas is 1500sccm to 2000sccm.
The disclosed embodiments also provide a film, including:
the N layers of films are deposited on the semiconductor substrate through reaction in the reaction cavity by first reaction gas and second reaction gas;
the carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films.
In the above aspect, the N-layer thin film includes: a first layer of film, a second layer of film and a third layer of film;
the first layer of film, the second layer of film and the third layer of film are deposited on the semiconductor substrate in sequence by the plasma enhanced chemical vapor deposition reaction of the first reaction gas and the second reaction gas in the reaction cavity after the flow gradient is increased or decreased;
the carbon content of the first layer of film, the second layer of film and the third layer of film is increased or decreased in sequence.
In the above scheme, the thickness of the top film in the N layers of films is 100nm to 300nm.
In the above scheme, the presence of at least two films among the N films includes: a sacrificial layer.
In the scheme, at least one layer of the N layers of films is etched with an extending pattern from top to bottom.
The embodiment of the disclosure also provides a memory, which comprises the film.
In the above scheme, the memory is a dynamic random access memory DRAM
Accordingly, embodiments of the present disclosure provide a thin film deposition method, a thin film and a memory. Which comprises the following steps: providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity; filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity; the flow of the first reaction gas is increased or decreased in a gradient manner, so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of the radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate; the carbon element content in the N layers of films is increased or decreased gradually along the growth direction of the N layers of films; n is an integer greater than 1. Because the content of carbon element in the film is related to the etching selectivity, the carbon element in the N layers of films formed by the scheme is changed in sequence, so that at least one layer of film in the N layers of films can adapt to the previous etching condition, and after the at least one layer of film is etched under the corresponding etching condition, the structure of the film is still stable because the unetched film still exists in the film.
Drawings
FIG. 1 is a schematic flow chart of an alternative thin film deposition method provided by an embodiment of the present disclosure;
FIG. 2 is a schematic diagram illustrating an alternative effect of a thin film deposition method according to an embodiment of the disclosure;
FIG. 3 is a schematic diagram illustrating an alternative effect of the thin film deposition method according to the embodiment of the disclosure;
FIG. 4 is a schematic flow chart of an alternative thin film deposition method provided by an embodiment of the present disclosure;
FIG. 5 is a schematic diagram illustrating an alternative effect of the thin film deposition method according to the embodiment of the disclosure;
FIG. 6 is a first schematic view of a film structure provided by an embodiment of the present disclosure;
fig. 7 is a schematic diagram of a capacitor structure provided by an embodiment of the disclosure;
fig. 8 is a schematic view of a cross-sectional structure of a capacitor according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram of a cross-sectional structure of a capacitor according to a second embodiment of the disclosure;
FIG. 10 is a second schematic structural view of a film provided by an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of a film provided by an embodiment of the present disclosure;
FIG. 12 is a fourth schematic structural view of a film provided by an embodiment of the present disclosure;
fig. 13 is a schematic structural diagram of a film provided by an embodiment of the present disclosure;
FIG. 14 is a sixth schematic structural view of a film provided by an embodiment of the present disclosure;
fig. 15 is a schematic structural diagram seven of a film provided by an embodiment of the present disclosure;
fig. 16 is a schematic structural diagram eight of a thin film provided in the embodiment of the present disclosure;
fig. 17 is a schematic structural diagram nine of a film provided by an embodiment of the present disclosure;
fig. 18 is a schematic structural diagram ten of a film provided by an embodiment of the present disclosure;
fig. 19 is an alternative structural diagram of a memory according to an embodiment of the disclosure.
Detailed Description
For the purpose of making the purpose, technical solutions and advantages of the present disclosure clearer, the technical solutions of the present disclosure are further elaborated with reference to the drawings and the embodiments, the described embodiments should not be construed as limiting the present disclosure, and all other embodiments obtained by a person of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present disclosure.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without undue experimentation.
The following description will be added if similar descriptions of "first/second" appear in the specification, and in the following description, reference is made to the term "first \ second \ third" merely to distinguish between similar objects and not to represent a particular ordering for the objects, and it is to be understood that "first \ second \ third" may be interchanged under certain circumstances or a sequential order, so that embodiments of the disclosure described herein can be practiced in other than the order illustrated or described herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of the disclosure only and is not intended to be limiting of the disclosure.
Referring to fig. 1, an alternative flow chart of a thin film deposition method according to an embodiment of the disclosure will be described with reference to steps.
S101, providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity.
In an embodiment of the present disclosure, a semiconductor substrate is provided and disposed in a reaction chamber.
Among them, the semiconductor substrate may be a silicon (Si) substrate, a silicon-on-insulator (SOI) substrate, a germanium (Ge) substrate, a germanium-on-insulator (GOI) substrate, a silicon germanium (SiGe) substrate, a III-V group compound semiconductor substrate, or an epitaxial thin film substrate obtained by Selective Epitaxial Growth (SEG). A sacrificial layer may be formed on the semiconductor substrate. The sacrificial layer may include: a silicon alkoxide. In other embodiments, the sacrificial layer may also be silicon oxide or silicon nitride. In the embodiments of the present disclosure, the sacrificial layer may be another material layer having an etching selectivity ratio with respect to the thin film.
S102, filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity.
In the embodiment of the disclosure, a mixed gas containing a first reactive gas and a second reactive gas is filled into the reaction chamber.
In an embodiment of the present disclosure, the first reaction gas includes: trimethylsilane. The second reaction gas includes: mixed gas of silane and ammonia. The N-layer film includes: a silicon carbon nitride film. And filling mixed gas of trimethylsilane, silane and ammonia gas into the reaction cavity.
In the disclosed embodiment, the deposition process of the thin film may include a gas filling phase and a plasma reaction film forming phase. And in the gas filling stage, mixed gas containing trimethylsilane, silane and ammonia gas is filled into the reaction cavity.
Wherein the flow rate of the ammonia gas is 400sccm to 500sccm. The flow rate of trimethylsilane was 20sccm to 80sccm. Illustratively, the flow of ammonia gas may include: 400sccm, 450sccm, and 500sccm. The trimethylsilane flow may include: 20sccm, 30sccm, 40sccm, 50sccm, 60sccm, 70sccm, and 80sccm. The flow ratio of silane to trimethylsilane is 2 to 4. The flow rate of silane was calculated to be 40sccm to 320sccm. Exemplary, the flow of silane may include: 40sccm, 80sccm, 120sccm, 160sccm, 200sccm, 240sccm, 280sccm, and 320sccm.
Besides, the mixed gas contains the first reaction gas and the second reaction gas, and also contains inert gas which can be used as carrier gas to carry the first reaction gas and the second reaction gas into the reaction cavity at a certain flow rate. The inert gas may be nitrogen, but is not limited thereto, and may be other inert gases, such as: and argon gas. Wherein the flow rate of the carrier gas is 1500sccm to 2000sccm. For example, the flow of the carrier gas may include: 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, and 2000sccm.
And S103, increasing or decreasing the flow of the first reaction gas in a gradient manner so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of the radio frequency generator, and sequentially depositing and forming N layers of thin films on the semiconductor substrate. The carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films.
In the embodiment of the disclosure, the flow of trimethylsilane is increased or decreased in a gradient manner, so that trimethylsilane, ammonia gas and silane react in a reaction cavity under the action of a radio frequency generator, and N layers of silicon carbon nitrogen films are sequentially deposited on a semiconductor substrate. And the carbon element content in the N layers of the nitrogen-carbon-silicon thin films is increased or decreased progressively along the growth direction of the N layers of the nitrogen-carbon-silicon thin films. The reaction temperature in the reaction chamber is 500 ℃ to 550 ℃. The radio frequency power of the radio frequency generator is 300W to 400W. The deposition rate of each film in the N layers of films is as follows: 1nm/s to 5nm/s.
For example, the reaction temperature in the reaction chamber may include: 500 ℃, 510 ℃, 520 ℃, 530 ℃, 540 ℃ and 550 ℃. The radio frequency power of the radio frequency generator may include: 300W, 310W, 320W, 330W, 340W, 350W, 360W, 370W, 380W, 390W and 400W. The deposition rate of each thin film may include: 1nm/s, 2nm/s, 3nm/s, 4nm/s and 5nm/s.
For example, when the flow rate of trimethylsilane is reduced in a gradient manner, the predetermined flow rate of trimethylsilane may be set to 80sccm, the predetermined flow rate of trimethylsilane may be reduced by 10sccm at regular intervals during deposition of trimethylsilane, silane and ammonia gas in the reaction chamber to form a thin film, and N layers of thin films may be formed by sequentially depositing trimethylsilane, silane and ammonia gas in the reaction chamber after each flow reduction. When the flow of the trimethylsilane is increased in a gradient manner, the preset flow of the trimethylsilane can be set to be 20sccm, the preset flow of the trimethylsilane is increased by 10sccm at regular intervals in the process that the trimethylsilane, the silane and the ammonia gas are deposited in the reaction cavity to form a film, and the N-layer film is formed by sequentially depositing the trimethylsilane, the silane and the ammonia gas in the reaction cavity after each flow increase. Wherein the preset flow rate is the flow rate set by the trimethyl silane at the beginning of film deposition.
In the embodiment of the disclosure, the radio frequency generator is started after the trimethyl silane, the ammonia gas and the silane are charged into the reaction cavity. The trimethylsilane, ammonia gas and silane enter a plasma reaction stage, and glow discharge occurs in the reaction cavity under the action of a radio frequency electric field of a radio frequency generator, so that a large amount of electrons are generated in the reaction cavity. The electrons obtain sufficient energy under the action of the electric field to collide with gas molecules, so that the gas molecules are activated to form a film to be deposited on the semiconductor substrate. In the process of forming a film on a semiconductor substrate by using trimethylsilane, ammonia gas and silane, the flow of the trimethylsilane is reduced in a gradient manner at regular intervals, so that the trimethylsilane with the reduced flow gradient reacts with the ammonia gas and the silane in a reaction cavity to form an N-layer nitrogen-carbon-silicon film with the gradient-reduced carbon element content. Wherein, because the flow gradient of the trimethylsilane is reduced and the trimethylsilane contains carbon elements, the content of the carbon elements in the N layer film is reduced along the growth direction of the film.
In the embodiment of the present disclosure, the flow rate of trimethylsilane may also be increased in a gradient manner at regular intervals, so that the trimethylsilane with the increased flow rate gradient reacts with ammonia gas and silane in the reaction chamber to form an N-layer silicon nitride-carbon film with an increased carbon element content in a gradient manner. The flow gradient of the trimethylsilane is increased, and the trimethylsilane contains carbon elements, so that the content of the carbon elements in the N layer film is increased along the growth direction of the film.
Wherein, the etching rate adaptable to each N-layer nitrogen-carbon-silicon film is changed along with the change of the content of carbon element in the N-layer nitrogen-carbon-silicon film. For example, as can be seen from fig. 2, the flow rate of trimethylsilane is increased from 20sccm to 80sccm, and the dry etching rate corresponding to the formed film is increased from 2.25nm/s to 2.9nm/s, that is, as the flow rate of trimethylsilane is increased, the etching rate of the formed film suitable for dry etching is gradually increased. For example, as can be seen from fig. 3, the flow rate of trimethylsilane is increased from 20sccm to 80sccm, and the wet etching rate corresponding to the formed film is decreased from 43nm/min to 7nm/min, that is, as the flow rate of trimethylsilane is increased, the etching rate of the formed film suitable for wet etching is gradually decreased.
In some embodiments of the present disclosure, the first reactive gas comprises: trimethylsilane. The second reaction gas includes: mixed gas of silane and ammonia.
The reaction equation of the mixed gas of trimethylsilane, silane and ammonia in the reaction cavity is as follows:
C3H10Si (gas) + SiH 4 (gas) + NH 3 (gas) SiCN + H 2 (gas)
Wherein H is generated in the reaction cavity 2 Is pumped out of the reaction chamber.
In other embodiments of the present disclosure, the first reaction gas may further include: trimethylsilane. The second reaction gas may further include: ammonia gas. And the flow of the trimethylsilane is reduced in a gradient manner, so that the trimethylsilane and the ammonia gas react in the reaction cavity under the action of the radio frequency generator, and N layers of silicon carbon nitride films are sequentially deposited on the semiconductor substrate.
In the embodiment of the present disclosure, a reaction equation of the mixed gas of trimethylsilane and ammonia gas in the reaction chamber is:
C3H10Si (gas) + NH 3 (gas) SiCN + H 2 (gas)
The embodiment of the disclosure provides a thin film deposition method. Which comprises the following steps: providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity. And filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity. The flow of the first reaction gas is increased or decreased in a gradient manner, so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of the radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate. The carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films. N is an integer greater than 1. Because the content of carbon element in the film is related to the etching selectivity, the carbon element in the N layers of films formed by the scheme is changed in sequence, so that at least one layer of film in the N layers of films can adapt to the previous etching condition, and after the at least one layer of film is etched under the corresponding etching condition, the structure of the film is still stable because the unetched film still exists in the film.
Referring to fig. 4, for an optional schematic flow chart of the thin film deposition method provided in the embodiment of the present disclosure, S103 shown in fig. 1 may also be implemented through S104 to S106, which will be described with reference to the steps.
And S104, filling a first reaction gas into the reaction cavity according to a preset flow rate, and performing a plasma enhanced chemical vapor deposition reaction on the first reaction gas and a second reaction gas in the reaction cavity so as to deposit and form a first layer of film on the semiconductor substrate.
In the embodiment of the disclosure, trimethylsilane is charged into a reaction chamber according to a predetermined flow rate, and a mixed gas of ammonia gas, silane and nitrogen gas is charged at the same time, and the trimethylsilane, the ammonia gas and the silane are subjected to a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction under the action of a radio frequency generator, so as to deposit and form a first layer of film on a semiconductor substrate.
In the PECVD, a gas containing atoms of a thin film component is ionized by microwave or radio frequency, and plasma is locally formed. The plasma is chemically very reactive and is very reactive to deposit the desired thin film on the semiconductor substrate. In order to allow the Chemical reaction to proceed at a lower temperature, the activity of plasma is utilized to promote the reaction, and thus this CVD (Chemical Vapor Deposition) technique is called Plasma Enhanced Chemical Vapor Deposition (PECVD).
S105, reducing the preset flow rate to a first flow rate according to a preset proportion, so that the first reaction gas and the second reaction gas filled into the reaction cavity at the first flow rate perform a plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing on the first layer of film to form a second layer of film.
In the embodiment of the disclosure, after trimethylsilane is filled into the reaction chamber for a certain time according to the predetermined flow rate, the predetermined flow rate is reduced by a first predetermined proportion or a first predetermined flow rate to obtain a first flow rate, and trimethylsilane filled into the reaction chamber with the first flow rate, silane and ammonia gas are subjected to a plasma enhanced chemical vapor deposition reaction in the reaction chamber, so that a second film layer is deposited on the first film layer. In the embodiment of the present disclosure, the first predetermined ratio and the first predetermined flow rate are not particularly limited.
S106, reducing the first flow rate to a second flow rate according to a preset ratio, enabling the first reaction gas and the second reaction gas which are filled into the reaction cavity with the second flow rate to carry out plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing on the second layer of film to form a third layer of film
In the embodiment of the disclosure, after trimethylsilane is charged into the reaction chamber for a certain period of time according to the first flow rate, the first flow rate is reduced by a second predetermined proportion or a second predetermined flow rate to obtain a second flow rate, and trimethylsilane charged into the reaction chamber with the second flow rate, silane and ammonia gas are subjected to a plasma enhanced chemical vapor deposition reaction in the reaction chamber, so that a third layer of film is deposited on the second layer of film. In the embodiment of the present disclosure, the second predetermined ratio and the second predetermined flow rate are not particularly limited.
In the embodiment of the present disclosure, the second predetermined ratio may be the same as or different from the first predetermined ratio. The second predetermined flow rate may be the same as or different from the first predetermined flow rate.
In the disclosed embodiments, the ratio of the silane flow rate to the second flow rate of trimethylsilane is also in the range of 2 to 4.
For example, the method for depositing and forming three layers of films on the semiconductor substrate 200 can be combined with fig. 5, wherein the first step: trimethylsilane is charged into the reaction chamber according to a predetermined flow rate, and the trimethylsilane, silane and ammonia gas are subjected to a plasma enhanced chemical vapor deposition reaction in the reaction chamber, so that the first film 101 is deposited on the semiconductor substrate 200. The second step is that: and reducing the preset flow rate to a first flow rate according to a preset proportion, so that the trimethylsilane, the silane and the ammonia gas which are filled into the reaction cavity at the first flow rate carry out plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing and forming a second film 102 on the first film 101. The third step: and reducing the first flow rate to a second flow rate according to a preset proportion, so that the trimethylsilane, the silane and the ammonia gas which are filled into the reaction cavity by the second flow rate carry out plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing on the second film 102 to form a third film 103. Wherein, the content of the C element in the first layer film 101, the second layer film 102 and the third layer film 103 is decreased gradually.
In the embodiment of the disclosure, carbon elements in the 3 layers of films formed by the method are sequentially changed, so that the 3 layers of films respectively correspond to different etching conditions, and after at least one layer of film in the 3 layers of films is etched under the corresponding etching condition, the 3 layers of films still have unetched films, so that the film structure is still stable.
Fig. 6 is a schematic structural diagram of a film according to an embodiment of the present disclosure.
The disclosed embodiment also provides a film 100, including:
n layers of thin films are deposited on the semiconductor substrate 200 by reaction from a first reactive gas and a second reactive gas in a reaction chamber.
The carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films.
In the embodiment of the present disclosure, the N-layer thin film is composed of the first to N-th thin films 101 to 400 on the semiconductor substrate 200. Wherein the first reaction gas may include: trimethylsilane. The second reaction gas may include: a mixed gas of silane and ammonia. And filling mixed gas of trimethylsilane, silane and ammonia gas into the reaction cavity, and increasing or reducing the flow of trimethylsilane after a certain time interval, so that the trimethylsilane, the silane and the ammonia gas are subjected to plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further N layers of silicon carbon nitrogen films are sequentially formed and deposited on the semiconductor substrate 200.
Wherein the thickness of the top film (i.e., the Nth film 400) among the N films is 100nm to 300nm. Illustratively, the thickness of the top film may include: 100nm, 150nm, 200nm, 250nm and 300nm.
In the embodiment of the present disclosure, the film 100 may serve as a support layer of the capacitor 300 in the DRAM, and may serve as a support for the electrode 301 of the capacitor 300. Illustratively, in conjunction with fig. 7, three layers of thin films are disposed at intervals around the periphery of each electrode 301 of the capacitor 300. A first film 101, a second film 102 and a third film 103. To illustrate the structure of the film 100 more clearly, please refer to fig. 8, wherein a sacrificial layer 104 is disposed between the first film 101 and the second film 102, and a sacrificial layer 104 is also disposed between the second film 102 and the third film 103. The material of sacrificial layer 104 may be silicon alkoxide (i.e., silicon oxide) or borophosphosilicate glass (BPSG). The content of the C element contained in the first, second, and third films 101, 102, and 103 is gradually increased or decreased from bottom to top, and since the etching rate of the films is related to the contained carbon element, the first, second, and third films 101, 102, and 103 respectively correspond to different etching rates. Referring to fig. 9, when the sacrificial layer 104 needs to be etched away, a hole may be first etched in the first film 101 at a corresponding etching rate, the sacrificial layer 104 between the first film 101 and the second film 102 is then etched through the hole penetrating the first film 101, a hole is then etched in the corresponding film at a corresponding etching rate of the second film 102, and the sacrificial layer 104 between the second film 102 and the third film 103 is etched through the hole penetrating the second film 102, so as to obtain the capacitor 300 with the sacrificial layer 104 completely removed.
Because the carbon element content in the film 100 is related to the etching selectivity, the carbon elements in the N layers of films formed by the present scheme are sequentially changed, so that at least one layer of film in the N layers of films can adapt to the current etching rate, and after the at least one layer of film is etched at the corresponding etching rate, the structure of the film 100 is still stable because the un-etched film still exists in the film 100.
Fig. 10 is a schematic structural diagram of a film according to an embodiment of the disclosure.
The N layer of film that this disclosed embodiment provided includes: a first film 101, a second film 102, and a third film 103.
The first thin film 101, the second thin film 102 and the third thin film 103 are deposited on the semiconductor substrate 200 in sequence by performing a plasma enhanced chemical vapor deposition reaction in the reaction chamber by the first reaction gas and the second reaction gas after the flow gradient is increased or decreased.
The carbon content of the first film 101, the second film 102 and the third film 103 is gradually increased or decreased.
In the embodiment of the present disclosure, since carbon elements in the 3 layers of films are sequentially changed, at least one of the 3 layers of films can adapt to a previous etching rate, and after at least one of the 3 layers of films is etched at a corresponding etching rate, the structure of the film is still stable because unetched films also exist in the 3 layers of films.
Fig. 11 is a schematic structural diagram of a film according to an embodiment of the present disclosure.
In the embodiment of the present disclosure, the first thin film 101, the second thin film 102, and the third thin film 103 are sequentially deposited on the semiconductor substrate 200 by performing a plasma enhanced chemical vapor deposition reaction on trimethylsilane, silane, and ammonia gas in a reaction chamber after the flow gradient is reduced.
The carbon content in the first film 101, the second film 102 and the third film 103 is decreased gradually.
In the embodiment of the disclosure, since the carbon elements in the 3 layers of films are sequentially decreased progressively, and then at least one layer of film in the 3 layers of films from top to bottom can adapt to the previous etching rate, and after at least one layer of film in the 3 layers of films is etched at the corresponding etching rate, the structure of the film is still stable because the unetched film still exists in the 3 layers of films.
Fig. 12 is a schematic structural diagram of a film according to an embodiment of the disclosure.
In the embodiment of the present disclosure, the first thin film 101, the second thin film 102, and the third thin film 103 are sequentially deposited on the semiconductor substrate 200 by performing a plasma enhanced chemical vapor deposition reaction on trimethylsilane, silane, and ammonia gas in a reaction chamber after increasing the flow gradient.
The carbon content of the first film 101, the second film 102 and the third film 103 increases progressively in sequence.
In the embodiment of the disclosure, since the carbon elements in the 3 layers of films are sequentially increased in size, and then at least one layer of film in the 3 layers of films from top to bottom can adapt to the current wet etching rate, and after at least one layer of film in the 3 layers of films is etched at the corresponding wet etching rate, the structure of the film is still stable because the unetched film still exists in the 3 layers of films.
Fig. 13 is a schematic structural diagram of a film according to an embodiment of the disclosure.
In some embodiments of the present disclosure, the presence of at least two films in the N films comprises: a sacrificial layer 104. Illustratively, a sacrificial layer 104 is disposed between the second layer film 102 and the third layer film 103. Sacrificial layer 104 may be: silicon oxide or silicon nitride. Sacrificial layer 104 may be another material having an etch selectivity with respect to the N-layer film.
In other embodiments, for example, referring to fig. 14, a sacrificial layer 104 is disposed below the N-layer thin film. When the sacrificial layer 104 needs to be etched away, holes can be etched in the corresponding layer of thin film through the etching rate corresponding to each layer of thin film in the N layers of thin films, and then the sacrificial layer 104 is etched through the holes penetrating through the N layers of thin films, so that the sacrificial layer 104 is removed.
In the embodiment of the present disclosure, when the thin film above the sacrificial layer 104 is etched, a corresponding etching rate may be selected for each layer of thin film, and then other layers of thin films are not affected during each etching, thereby ensuring the stability of the thin film.
Fig. 15 is a schematic structural diagram of a film according to an embodiment of the disclosure.
In some embodiments of the present disclosure, at least one of the N thin films is etched with an extended pattern from top to bottom.
Wherein, a sacrificial layer 104 is disposed below the N-layer thin film. When etching to remove sacrificial layer 104 is required. First, the hole H is formed by etching the nth film 400 at an etching rate corresponding thereto. The hole H penetrates the nth layer film 400, and the upper surface of the N-1 th layer film 401 is exposed in the hole H. When a new hole needs to be formed by etching the N-1 th film 401, the etching can be performed only on the N-1 th film 401 by selecting the etching rate corresponding to the N-1 th film 401, and the N-1 th film and the lower film are not affected by the etching, so that the structures of the N-1 th film 400 and the lower film are still stable. With reference to fig. 16, in the process of removing the sacrificial layer 104 by etching, the corresponding films are etched at the etching rates corresponding to the nth film 400 to the first film 101 in the N films, so as to form a hole G in the films, and the sacrificial layer 104 is etched through the hole G penetrating through the N films, so as to remove the sacrificial layer 104.
Since, the elemental carbon content in the film 100 is related to the etch rate. When dry etching is performed on the film 100, the higher the carbon content in the film 100 is, the higher the dry etching rate can be adapted to. With reference to fig. 15, when the content of carbon element in the N layers of thin films decreases from bottom to top, the dry etching rate that each layer of thin film can adapt to increases from top to bottom. When the content of carbon elements in the N layers of films sequentially increases from bottom to top, the dry etching rate adaptable to each layer of film sequentially decreases from top to bottom.
When wet etching is performed on the film 100, the higher the carbon content in the film 100 is, the lower the applicable wet etching rate is. Referring to fig. 15, when the content of carbon in the N layers of thin films decreases from bottom to top, the N layers of thin films decrease from top to bottom, and the wet etching rate that each layer of thin film can adapt to decreases. When the content of carbon elements in the N layers of films sequentially increases from bottom to top, the N layers of films sequentially increase from top to bottom, and the wet etching rate adaptable to each layer of film sequentially increases.
In the embodiment of the disclosure, since the N layers of films are etched from top to bottom through the matched etching rate, the extended pattern is formed on at least one layer of film, when the film which is not matched with the current etching rate exists, the layer of film is not affected by etching, and the stability of the film is further ensured.
Fig. 17 is a schematic structural diagram of a film according to an embodiment of the disclosure.
In the embodiment of the present disclosure, the carbon content of the film 100 decreases linearly from bottom to top.
In the embodiment of the present disclosure, the thin film 100 is deposited on the semiconductor substrate 200 by a plasma enhanced chemical vapor deposition reaction of trimethylsilane, silane and ammonia gas in a reaction chamber after the flow rate is linearly decreased.
Wherein, since the flow rate of trimethylsilane is linearly decreased and trimethylsilane contains carbon element, the content of carbon element in the film 100 is linearly decreased along the growth direction of the film 100.
Referring to fig. 17, when the content of carbon in the film 100 decreases linearly from bottom to top, the dry etching rate per unit thickness of the film 100 increases gradually from top to bottom. The N layers of films are from top to bottom, and the wet etching rate adaptable to each unit thickness of the film 100 is gradually reduced.
In the embodiment of the present disclosure, since the content of the carbon element in the film 100 in the present disclosure is linearly reduced, and then the film 100 having a certain thickness from top to bottom can adapt to the current etching rate, and after the film having the certain thickness is etched at the corresponding etching rate, because a part of the unaffected films still exist in the film 100, the structure of the film 100 is still stable.
Please refer to fig. 18, which is a schematic structural diagram of a film according to an embodiment of the disclosure.
In the embodiment of the present disclosure, the content of carbon in the film 100 increases linearly from bottom to top.
In the embodiment of the present disclosure, the thin film 100 is deposited on the semiconductor substrate 200 by a plasma enhanced chemical vapor deposition reaction of trimethylsilane, silane and ammonia gas in a reaction chamber after the flow rate is linearly increased.
Referring to fig. 18, when the content of carbon element in the film 100 increases linearly from bottom to top, the dry etching rate that the film 100 can adapt to per unit thickness decreases gradually from top to bottom. The wet etch rate that the film 100 can accommodate per unit thickness is gradually increased from top to bottom.
In the embodiment of the present disclosure, because the content of the carbon element in the film 100 in the present embodiment is linearly increased, and then the film with a certain thickness from top to bottom in the film 100 can adapt to the current wet etching rate, and after the film with the thickness is etched at the corresponding wet etching rate, because a part of the film that is not affected still exists in the film 100, the structure of the film 100 is still stable.
Fig. 19 is an alternative structural schematic diagram of a memory according to an embodiment of the disclosure, and as shown in fig. 19, a memory 60 includes the film 100 according to the embodiment.
In some embodiments of the present disclosure, referring to fig. 19, the Memory 60 is a Dynamic Random Access Memory (DRAM).
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a component of' 8230; \8230;" does not exclude the presence of another like element in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present disclosure are merely for description and do not represent the merits of the embodiments. The methods disclosed in the several method embodiments provided in this disclosure may be combined arbitrarily without conflict to arrive at new method embodiments. The features disclosed in the several product embodiments provided in this disclosure may be combined in any combination to yield new product embodiments without conflict. The features disclosed in the several method or apparatus embodiments provided in this disclosure may be combined in any combination to arrive at a new method or apparatus embodiment without conflict.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present disclosure, and shall cover the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (14)
1. A thin film deposition method, comprising:
providing a semiconductor substrate and placing the semiconductor substrate in a reaction cavity;
filling mixed gas containing first reaction gas and second reaction gas into the reaction cavity;
the flow of the first reaction gas is increased or decreased in a gradient manner, so that the first reaction gas and the second reaction gas react in the reaction cavity under the action of a radio frequency generator, and N layers of thin films are sequentially deposited on the semiconductor substrate; the carbon element content in the N layers of films is increased or decreased progressively along the growth direction of the N layers of films; n is an integer greater than 1.
2. The thin film deposition method of claim 1, wherein the first reaction gas comprises: trimethylsilane; the second reactive gas includes: a mixed gas of silane and ammonia gas; the N-layer film includes: a silicon carbon nitride film.
3. The method of claim 1, wherein the gradient increases or decreases the flow rate of the first reactive gas so that the first reactive gas and the second reactive gas react in the reaction chamber under the action of the radio frequency generator to sequentially deposit N layers of thin films on the semiconductor substrate, and the method comprises:
filling the first reaction gas into the reaction cavity according to a preset flow rate, and performing a plasma enhanced chemical vapor deposition reaction on the first reaction gas and the second reaction gas in the reaction cavity so as to deposit and form a first layer of film on the semiconductor substrate;
reducing the preset flow rate to a first flow rate according to a preset proportion, so that the first reaction gas and the second reaction gas which are filled into the reaction cavity at the first flow rate carry out the plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing on the first layer of film to form a second layer of film;
and reducing the first flow rate to a second flow rate according to the preset proportion, so that the first reaction gas and the second reaction gas which are filled into the reaction cavity by the second flow rate carry out the plasma enhanced chemical vapor deposition reaction in the reaction cavity, and further depositing and forming a third layer of film on the second layer of film.
4. The thin film deposition method of claim 1, wherein the deposition rate of each of the N thin films is: 1nm/s to 5nm/s.
5. The thin film deposition method of claim 1, wherein a reaction temperature in the reaction chamber is 500 ℃ to 550 ℃; the radio frequency power of the radio frequency generator is 300W to 400W.
6. The thin film deposition method of claim 2, wherein a flow ratio of the silane to the trimethylsilane in the reaction chamber is 2 to 4; the flow rate of the ammonia gas is 400sccm to 500sccm.
7. The thin film deposition method according to claim 1 or 2, wherein the reaction chamber further comprises: carrying gas; the flow rate of the carrier gas is 1500sccm to 2000sccm.
8. A film, comprising:
the N layers of thin films are deposited on the semiconductor substrate through reaction of first reaction gas and second reaction gas in the reaction cavity;
the carbon element content in the N layers of films increases or decreases along the growth direction of the N layers of films.
9. The film of claim 8, wherein the N-layer film comprises: a first layer of film, a second layer of film and a third layer of film;
the first layer of film, the second layer of film and the third layer of film are subjected to plasma enhanced chemical vapor deposition reaction in the reaction cavity by the first reaction gas and the second reaction gas after the flow gradient is increased or reduced, and are sequentially deposited on the semiconductor substrate;
the carbon content of the first layer of film, the second layer of film and the third layer of film is increased or decreased in sequence.
10. The film of claim 8, wherein a thickness of a top film of the N-layer films is from 100nm to 300nm.
11. The film of claim 8, wherein the presence of at least two of the N layers of film therebetween comprises: a sacrificial layer.
12. The film of claim 8, wherein at least one of the N layers of film is etched from top to bottom with an extended pattern.
13. A memory comprising a film as claimed in any one of claims 8 to 12.
14. The memory of claim 13, wherein the memory is a Dynamic Random Access Memory (DRAM).
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