CN115615457A - MEMS inertial system temperature hysteresis error analysis method - Google Patents
MEMS inertial system temperature hysteresis error analysis method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
- G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
- G01C21/12—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
- G01C21/16—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
- G01C21/183—Compensation of inertial measurements, e.g. for temperature effects
Abstract
The invention provides a temperature hysteresis error analysis method of an MEMS (micro-electromechanical system) inertial system, aiming at two sources of temperature hysteresis errors of an MEMS inertial device, namely temperature delay caused by temperature difference between a temperature characterization value and a temperature truth value and thermal hysteresis effects of installation and packaging stress of the inertial system, the influence of each component part and installation links of the system on the temperature hysteresis errors is separated by integrating a temperature sensor in the inertial device and comparing the relation between the output of the inertial system and the temperature under different installation states, the heat transfer delay phenomenon caused by the physical distance between a temperature characterization point and an MEMS inertial sensor chip is eliminated, and the sources of the temperature hysteresis errors can be accurately positioned.
Description
Technical Field
The invention belongs to the technical field of inertia, and particularly relates to a temperature hysteresis error analysis method for an MEMS (micro-electromechanical system) inertia system.
Background
The MEMS inertial system (MEMS gyroscope and MEMS accelerometer) has the characteristics of small volume, low cost, high integration level, strong overload resistance and the like, and has wide application prospect in the fields of navigation guidance and intelligent ammunition. Like other sensors, the MEMS inertial system is greatly affected by temperature, and generally employs a temperature compensation method to suppress temperature errors, and a common method is to establish a temperature model of the MEMS inertial system through a temperature experiment, thereby implementing a temperature compensation model. However, the temperature hysteresis phenomenon exists in the temperature characteristic of the MEMS inertial system, the complexity of a temperature compensation model is increased, and meanwhile, the modeling precision and the compensation precision of the temperature error of the MEMS inertial system are seriously influenced. The source of the temperature hysteresis of the MEMS inertial system can be divided into two parts, namely heat transfer delay generated by the temperature gradient between a temperature characterization point and the MEMS inertial sensor chip in the testing process of the inertial system and thermal hysteresis effect caused by assembly and packaging links in the inertial system. The temperature hysteresis inhibits the temperature performance of the MEMS inertial system, and is a problem to be solved urgently at present.
Disclosure of Invention
The invention aims to provide a temperature hysteresis error analysis method of an MEMS inertial system, which provides guidance for inhibiting temperature hysteresis errors.
The technical solution for realizing the purpose of the invention is as follows:
a temperature hysteresis error analysis method of a MEMS inertial system comprises the following steps:
fixing an MEMS inertial sensor wafer on a temperature control probe station, interconnecting a wafer level test circuit with an MEMS inertial sensor chip to drive the MEMS inertial sensor and acquire the output of the MEMS inertial sensor, attaching a temperature sensor on the MEMS inertial sensor chip to be tested, performing a temperature rise and fall experiment at a constant temperature change rate, acquiring the output of the MEMS inertial sensor chip and the output of the temperature sensor, and acquiring a relation curve B1 of the output of the MEMS inertial sensor chip and the temperature;
scribing an MEMS inertial sensor wafer to obtain a single MEMS inertial sensor chip, attaching a temperature sensor on the MEMS inertial sensor chip, and packaging the MEMS inertial sensor chip;
the MEMS inerter is inversely placed in an opening of a PCB of a measurement and control circuit of the MEMS inertial sensor and is electrically connected with a bonding pad on the PCB through a lead; fixing the PCB on a tool, and inverting the MEMS inertial device;
performing a temperature rise and drop experiment of a constant temperature change rate, and acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B2 of the output of the MEMS inertial device and the temperature;
correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B1 and B2 at the same temperature to obtain a curve which is a temperature hysteresis error generated in the MEMS inertial sensor chip packaging link;
and 3, separating the temperature hysteresis generated in the welding link of the MEMS inertial device and the PCB:
welding an MEMS inertial device on a PCB (printed Circuit Board) of a measurement and control circuit of the MEMS inertial sensor, suspending the PCB of the measurement and control circuit of the MEMS inertial sensor in a temperature control box, carrying out a temperature rise and fall experiment of a constant temperature change rate, acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B3 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature fall section of the curves B3 and B2 at the same temperature to obtain a temperature hysteresis error generated in the welding link of the MEMS inertial device and the PCB of the measurement and control circuit of the MEMS inertial sensor;
installing the welded MEMS inertial device and the MEMS inertial sensor measurement and control circuit PCB on a tool, carrying out a temperature rise and fall experiment of a constant temperature change rate, acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B4 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature fall section of curves B4 and B3 at the same temperature to obtain the influence of the MEMS inertial sensor measurement and control circuit PCB and the fixation thereof on the temperature hysteresis of the gyroscope;
installing the welded MEMS inertial device and the PCB of the measurement and control circuit of the MEMS inertial sensor in a metal shell to form an MEMS inertial system; suspending the metal shell in a temperature control box, carrying out a temperature rise and drop experiment of a constant temperature change rate, collecting the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B5 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature drop section of curves B5 and B4 at the same temperature to obtain a temperature hysteresis error generated by the metal shell;
step 6, separating the temperature hysteresis generated by fixing the metal shell:
and installing the assembled MEMS inertial system on a tool through a metal shell, carrying out a temperature rise and drop experiment of a constant temperature change rate, acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B6 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature drop section of the curves B6 and B5 at the same temperature to obtain a temperature hysteresis error generated in the installation link of the metal shell.
Compared with the prior art, the invention has the remarkable advantages that:
(1) The temperature hysteresis error generated by each component of the MEMS inertial system is realized through gradual decomposition, and the action of each component is clarified; the method has the advantages that the free suspension method is adopted, the influence of the installation link on the temperature hysteresis error of the MEMS inertial system is separated, the method is simple, reliable and easy to operate, and the method is suitable for analyzing the temperature hysteresis error of other MEMS sensors.
(2) A temperature sensor is pasted on the surface of the MEMS inertial sensor chip, so that the temperature representation value is infinitely close to the MEMS inertial sensor, the heat transfer delay caused by the physical distance between the temperature representation point and the MEMS inertial sensor chip is eliminated, and the temperature hysteresis error caused by inaccurate temperature representation is eliminated.
Drawings
Fig. 1 is a schematic diagram of a MEMS inertial device system according to the present invention.
Fig. 2 is a schematic diagram of a temperature hysteresis test system of a MEMS inertial sensor chip according to the present invention.
Fig. 3 is a flow chart of the MEMS inertial system temperature hysteresis test separation of the present invention.
FIG. 4 is a schematic diagram of the output of the MEMS inertial device system of the present invention with temperature.
Detailed Description
The invention is further described with reference to the following figures and embodiments.
According to the experimental separation method for the temperature hysteresis error of the MEMS inertial device, aiming at two sources of the temperature hysteresis error of the MEMS inertial device, temperature delay caused by temperature difference between a temperature representation value and a temperature true value and the thermal hysteresis effect of installation and packaging stress of an inertial system are compared by integrating the temperature sensor 5 in the inertial device 2, the relation between the output of the inertial system and the temperature under different installation states is compared, the influence of each component and installation link of the system on the temperature hysteresis error is separated, and the source of the temperature hysteresis error is accurately positioned.
Referring to fig. 1, the MEMS inertial system 1 includes a MEMS inertial device 2, a MEMS inertial sensor measurement and control circuit PCB board 3, and a metal housing 4 for isolating the external environment and providing mechanical support. The MEMS inertial device 2 includes a MEMS inertial sensor chip 21 and a ceramic or metal package 22. Because there is temperature gradient in MEMS inertial sensor chip and external environment, there is the time delay of heat transfer, when adopting outside temperature measurement sensor to do the temperature representation, the temperature rise or fall in-process can lead to the temperature hysteresis phenomenon certainly. The temperature sensor 5 is integrated in the MEMS inertial device, so that the temperature measuring point is close to the MEMS inertial sensor to the maximum extent, and the phenomenon of heat transfer delay caused by the physical distance between the temperature representation point and the temperature true value is eliminated.
With reference to fig. 2, 3 and 4, the temperature hysteresis test separation is specifically performed as follows:
step one, testing the temperature hysteresis of the MEMS inertial sensor chip is achieved.
Referring to fig. 2, the MEMS inertial sensor wafer 6 is fixed on the temperature control probe station 7, and the temperature sensor 5 is attached to the MEMS inertial sensor chip 21 to be tested (see fig. 2 (a)). Referring to fig. 2 (b), the wafer level test circuit 8 is mounted with probes 81, and the wafer level test circuit 8 is electrically interconnected with the MEMS inertial sensor chip 21 by the probes 81.
A temperature rise and fall experiment of a constant temperature change rate (e.g., 1 ℃/min) is performed within a variation range of an ambient temperature (e.g., -40 to 60 ℃), and the output of the MEMS inertial sensor chip 21 and the output of the temperature sensor 5 are collected, so that a curve of a relationship between the output of the MEMS inertial sensor chip 21 and the temperature is obtained, and the curve is shown as B1 in fig. 4.
And step two, testing the temperature hysteresis of the MEMS inertial device 2, and separating the temperature hysteresis generated in the packaging link of the MEMS inertial sensor chip 21.
With reference to fig. 1, the MEMS inertial sensor wafer 6 is diced to obtain a single MEMS inertial sensor chip 21, the MEMS inertial sensor chip 21 is mounted on a ceramic or metal package 22, a temperature sensor 5 is mounted on the MEMS inertial sensor chip 21, and finally, wire bonding and capping are completed. The MEMS inertial sensor chip 21 and its encapsulated ceramic or metal package 22 form the MEMS inertial device 2.
With reference to fig. 3 (a), a dedicated MEMS inertial sensor measurement and control circuit perforated PCB board 9, a MEMS inertial sensor measurement and control circuit perforated PCB board 8, and a MEMS inertial device 2 are designed and processed to be placed in the hole 91. During the experiment, the perforated PCB board 9 of the measurement and control circuit of the MEMS inertial sensor is fixed on the tool 11, the MEMS inertial device 2 is inverted and placed in the middle of the hole 91, one end of the slender wire 10 is welded on the MEMS inertial device 2, and the other end of the slender wire is welded on a bonding pad 92 on the perforated PCB board 9 of the measurement and control circuit of the MEMS inertial sensor, so that the electrical interconnection is realized. The MEMS inertial device 2 is not directly welded with the perforated PCB board 9 of the measurement and control circuit of the MEMS inertial sensor, and a slender wire 10 is adopted, so that the deformation of the perforated PCB board 9 of the measurement and control circuit of the MEMS inertial sensor does not influence the output of the MEMS inertial device 2.
A temperature rise and fall experiment with a constant temperature change rate (such as 1 ℃/min) is carried out within the variation range of the ambient temperature (such as minus 40-60 ℃), the output of the MEMS inertial device 2 and the output of the temperature sensor 5 are collected, and the relation curve of the output of the MEMS inertial device 2 and the temperature is shown as B2 in figure 4. And (3) correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the B1 curve and the B2 curve at the same temperature by combining the B2 curve and the B1 curve, wherein the obtained curves are temperature hysteresis errors generated in the packaging link of the MEMS inertial sensor chip 21.
And thirdly, separating the temperature hysteresis generated in the welding link of the MEMS inertial device 2 and the PCB 3.
With reference to fig. 3 (b), the MEMS inertial device 2 is soldered on the MEMS inertial sensor measurement and control circuit PCB board 3. The MEMS inertial sensor measurement and control circuit PCB 3 is suspended in the temperature control box 12. In the temperature change experiment process, air flows in the temperature control box 12, and in order to reduce the influence of the air flow on the output of the MEMS inertial device 2, a heavy object 13 is hung below the MEMS inertial sensor measurement and control circuit PCB 3.
A temperature rise and fall experiment of a constant temperature change rate (such as 1 ℃/min) is carried out in a variation range of the ambient temperature (such as-40-60 ℃), the output of the MEMS inertial device 2 and the output of the temperature sensor 5 are collected, and a relation curve of the output and the temperature is shown as B3 in figure 4. And (3) correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B3 and B2 at the same temperature by combining the temperature curve B2 obtained in the step two, so as to obtain the temperature hysteresis error generated in the link of welding the MEMS inertial device 2 and the MEMS inertial sensor measurement and control circuit PCB 3.
And step four, separating the PCB and fixing the PCB to generate temperature hysteresis.
And (c) mounting the MEMS inertial device 2 and the MEMS inertial sensor measurement and control circuit PCB 3 which are welded in the step three on a tool 11 by combining with the graph of fig. 3 (c). A temperature rise and fall experiment of a constant temperature change rate (such as 1 ℃/min) is carried out in a variation range of the ambient temperature (such as minus 40-60 ℃), the output 2 of the MEMS inertial device and the output of the temperature sensor 5 are collected, and a relation curve of the output and the temperature is shown as B4 in figure 4. And (4) correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B4 and B3 at the same temperature by combining the temperature curve B3 obtained in the step three, so that the influence of the MEMS inertial sensor measurement and control circuit PCB 3 and the fixation thereof on gyroscope temperature hysteresis is obtained.
And step five, separating the temperature hysteresis generated by the metal shell 4.
And (d) with reference to fig. 3, mounting the MEMS inertial device 2 and the MEMS inertial sensor measurement and control circuit PCB 3 welded in the third step in the metal housing 4 to form the MEMS inertial system 1. The metal shell 4 is suspended in the temperature control box 12. In the temperature change experiment process, air flows in the temperature control box, and in order to reduce the influence of the air flow on the output of the MEMS inertial device 2, a heavy object 13 is hung below the metal shell 4.
A temperature rise and fall experiment of a constant temperature change rate (such as 1 ℃/min) is carried out in a variation range of the ambient temperature (such as minus 40-60 ℃), the output 2 of the MEMS inertial device and the output of the temperature sensor 5 are collected, and a relation curve of the output and the temperature is shown as B5 in figure 4. And correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B5 and B4 at the same temperature by combining the temperature curve B4 obtained in the step four, so as to obtain the temperature hysteresis error generated by the metal shell 4.
And step six, separating the temperature hysteresis generated by fixing the metal shell 4.
With reference to fig. 3 (e), the MEMS inertial system 1 assembled in step five is mounted on the tool 11 through the metal housing 4 thereof.
A temperature rise and fall experiment of a constant temperature change rate (such as 1 ℃/min) is carried out in a variation range of the ambient temperature (such as-40-60 ℃), the output of the MEMS inertial device 2 and the output of the temperature sensor 5 are collected, and a relation curve of the output and the temperature is shown as B6 in figure 4. And (5) correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B6 and B5 at the same temperature by combining the temperature curve B5 obtained in the step five to obtain the temperature hysteresis error generated in the link of installing the metal shell 4.
The invention has not been described in detail and is part of the common general knowledge of a person skilled in the art.
The above examples are provided for the purpose of describing the present invention only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims. Various equivalent substitutions and modifications can be made without departing from the spirit and principles of the invention, and are intended to be included within the scope of the invention.
Claims (6)
1. A temperature hysteresis error analysis method of a MEMS inertial system is characterized by comprising the following steps:
step 1, testing the temperature hysteresis of the MEMS inertial sensor chip:
fixing an MEMS (micro electro mechanical System) inertial sensor wafer on a temperature control probe table, interconnecting a wafer level test circuit and an MEMS inertial sensor chip to drive the MEMS inertial sensor and acquire the output of the MEMS inertial sensor, attaching a temperature sensor on the MEMS inertial sensor chip to be tested, carrying out a temperature rise and fall experiment of a constant temperature change rate, acquiring the output of the MEMS inertial sensor chip and the output of the temperature sensor, and obtaining a relation curve B1 of the output of the MEMS inertial sensor chip and the temperature;
step 2, testing the temperature hysteresis of the MEMS inertial device, and separating the temperature hysteresis generated in the packaging link of the MEMS inertial sensor chip:
scribing the MEMS inertial sensor wafer to obtain a single MEMS inertial sensor chip, attaching a temperature sensor on the MEMS inertial sensor chip, and packaging the MEMS inertial sensor chip;
the MEMS inerter is inversely placed in an opening of a PCB of a measurement and control circuit of the MEMS inertial sensor and is electrically connected with a bonding pad on the PCB of the measurement and control circuit of the MEMS inertial sensor through a lead; fixing a PCB (printed Circuit Board) of a measurement and control circuit of the MEMS inertial sensor on a tool, and inverting the MEMS inertial device;
performing a temperature rise and drop experiment of a constant temperature change rate, and acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B2 of the output of the MEMS inertial device and the temperature;
correspondingly subtracting the gyroscope outputs of the temperature rising section and the temperature lowering section of the curves B1 and B2 at the same temperature to obtain a curve which is a temperature hysteresis error generated in the packaging link of the MEMS inertial sensor chip;
and 3, separating temperature hysteresis generated in the welding link of the MEMS inertial device and the PCB:
welding an MEMS inertial device on a measurement and control circuit PCB of the MEMS inertial sensor, suspending the measurement and control circuit PCB of the MEMS inertial sensor in a temperature control box, performing a temperature rise and fall experiment of a constant temperature change rate, collecting the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B3 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature fall section of the curves B3 and B2 at the same temperature to obtain a temperature hysteresis error generated in the welding link of the MEMS inertial device and the PCB;
step 4, separating the PCB and fixing the PCB to generate temperature hysteresis:
installing the welded MEMS inertial device and the MEMS inertial sensor measurement and control circuit PCB on a tool, carrying out a temperature rise and fall experiment of a constant temperature change rate, acquiring the output of the MEMS inertial device and the output of a temperature sensor to obtain a relation curve B4 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature fall section of curves B4 and B3 at the same temperature to obtain the influence of the MEMS inertial sensor measurement and control circuit PCB and the fixation thereof on the temperature hysteresis of the gyroscope;
step 5, separating the temperature hysteresis generated by the metal shell:
installing the welded MEMS inertial device and the MEMS inertial sensor measurement and control circuit PCB in a metal shell to form an MEMS inertial system; suspending the metal shell in a temperature control box, carrying out a temperature rise and drop experiment of constant temperature change rate, collecting the output of an MEMS inertial device and the output of a temperature sensor to obtain a relation curve B5 of the output of the MEMS inertial device and the temperature, and correspondingly subtracting the gyroscope outputs of a temperature rise section and a temperature drop section of curves B5 and B4 at the same temperature to obtain a temperature hysteresis error generated by the metal shell;
step 6, separating the temperature hysteresis generated by fixing the metal shell:
the assembled MEMS inertial system is installed on a tool through a metal shell, a temperature rise and drop experiment with constant temperature change rate is carried out, the output of the MEMS inertial device and the output of a temperature sensor are collected, a relation curve B6 of the output of the MEMS inertial device and the temperature is obtained, gyroscope outputs of a temperature rise section and a temperature drop section of curves B6 and B5 are correspondingly subtracted at the same temperature, and a temperature hysteresis error generated in a metal shell installation link is obtained.
2. The method of analyzing temperature hysteresis error of a MEMS inertial system according to claim 1, wherein the ambient temperature of the temperature increase and decrease experiment at the constant temperature change rate in each of the steps is-40 to 60 ℃.
3. The method for analyzing the temperature hysteresis error of the MEMS inertial system according to claim 1, wherein a counterweight for reducing air flow is hung below a PCB (printed Circuit Board) of a measurement and control circuit of the MEMS inertial sensor in the experiment process in the step 3.
4. The method for analyzing temperature hysteresis error of MEMS inertial system of claim 1, wherein a weight to reduce air flow is hung under the metal housing during the experiment of step 5.
5. The method for analyzing the temperature hysteresis error of the MEMS inertial system according to claim 1, wherein the MEMS inertial sensor chip is packaged by a ceramic or metal tube.
6. The method for analyzing temperature hysteresis error of a MEMS inertial system according to claim 1, wherein a temperature change rate of the constant temperature change rate is 1 ℃/min.
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