CN115611232A - Nano cantilever beam and preparation process thereof - Google Patents
Nano cantilever beam and preparation process thereof Download PDFInfo
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- CN115611232A CN115611232A CN202211611871.8A CN202211611871A CN115611232A CN 115611232 A CN115611232 A CN 115611232A CN 202211611871 A CN202211611871 A CN 202211611871A CN 115611232 A CN115611232 A CN 115611232A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0029—Transducers for transforming light into mechanical energy or viceversa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
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Abstract
The invention relates to a chip, in particular to a nano cantilever beam and a preparation process thereof. The preparation process of the nano cantilever adopts a wet etching process and comprises the following steps: putting the chip subjected to wet etching into deionized water to stop reaction; immediately putting the chip into a first solvent for transition after taking the chip out of the deionized water; then drying the chip in the air; obtaining the nano cantilever; the first solvent is one or more selected from absolute ethyl alcohol, methanol, 1-propanol and 1-butanol. The process avoids the collapse of the cantilever beam structure and successfully realizes the preparation of the photoacoustic crystal microcavity.
Description
Technical Field
The invention relates to a chip, in particular to a nano cantilever beam and a preparation process thereof.
Background
An opto-mechanical crystal (OM), also called a photoacoustic crystal, is a combination of a photonic crystal and a phononic crystal. The photoacoustic crystal microcavity can limit light and mechanical movement at the same time, generates strong photon-phonon interaction, provides an effective way for realizing phonon generation and depletion on a chip, and has wide prospects in fundamental science and technical applications such as mesoscopic quantum mechanics, sensing, nonlinearity and the like.
The nano cantilever beam is a suspended structure with hundreds of nanometer width waveguides on a chip and the length of the waveguide reaches tens of micrometers, and the gradual change micropores are etched on the cantilever beam, so that the simultaneous local area of an optical field and a mechanical mode can be realized. The nano cantilever beam is the best structure for realizing the photoacoustic crystal microcavity at present, and has the advantages that the strong interaction between an optical field and a mechanical mode can be realized in a smaller size, a phonon mode above GHz and phonon lasing are realized, the quantum ground state is realized, and the quantum effect is observed in a mesoscopic scale. The cantilever beam structure has high-efficiency limitation on a mechanical mode and an optical mode, so that the coupling between the system and the external environment is extremely small, the cantilever beam microcavity has extremely high optical and mechanical quality factors, the high mechanical quality factor corresponds to a long acoustic service life, and the cantilever beam microcavity has a plurality of applications in the aspects of quantum information storage, signal delay and the like. Meanwhile, the nano cantilever beam structure is particularly sensitive to the change of physical quantities such as refractive index, mass, acceleration and the like, and can be used for high-precision multi-physical-quantity sensing on a chip.
The preparation of the nano cantilever beam has very high requirements on the process. To obtain a microcavity with both high optical quality factor and mechanical quality factor, a nanometer precision graded micropore needs to be manufactured on a nanometer cantilever; and the bridge type cantilever beam structure with the width of hundreds of nanometers and the length of tens of micrometers has weak mechanical strength and is easy to collapse.
Disclosure of Invention
At least to solve one of the above technical problems, the present invention provides a nano cantilever and a process for preparing the same.
The invention firstly provides a preparation process of a nano cantilever beam, which adopts a wet etching process and comprises the following steps:
putting the chip subjected to wet etching into deionized water to stop reaction;
immediately putting the chip into a first solvent for transition after taking the chip out of the deionized water; then airing; and obtaining the nano cantilever beam.
The first solvent is one or more selected from absolute ethyl alcohol, methanol, 1-propanol and 1-butanol.
According to an embodiment of the present invention, the first solvent is preferably absolute ethanol.
According to the embodiment of the invention, the concentration of the absolute ethyl alcohol is more than or equal to 99 percent, and especially 99.5 percent.
According to the embodiment of the invention, the time for putting the chip which is subjected to wet etching into deionized water to stop reaction is 15-30s.
According to the embodiment of the invention, after the chip is taken out of the deionized water, the chip is placed into the first solvent for transition within the range of 15-30s.
According to the specific embodiment of the invention, the nano cantilever is prepared On an SOI (Silicon-On-Insulator) substrate.
According to the specific embodiment of the invention, the preparation process of the nano cantilever comprises the following steps:
1) Providing a cleaned SOI substrate as a chip, defining a photoacoustic crystal microcavity graph with a nano arm structure by adopting electron beam exposure, and then etching and removing electron beam glue by adopting an Inductively Coupled Plasma (ICP) dry method;
2) Carrying out wet etching on the chip by using buffered hydrofluoric acid (BHF), wherein the BHF removes SiO below the SOI chip by etching areas on two sides of the nano-arm 2 The nano-arm photoacoustic crystal microcavity is suspended after wet etching;
3) Putting the chip subjected to wet etching into deionized water to stop reaction;
4) Taking out the chip from the deionized water, and immediately putting the chip into a first solvent for transition;
5) Then drying the chip in the air; and obtaining the nano cantilever beam.
The invention also comprises the nano cantilever beam prepared by the process.
According to the embodiment of the invention, the arm width of the nano cantilever is 260-500nm.
According to the embodiment of the invention, the arm length of the nano cantilever beam is 15-45 DEG
。
According to the embodiment of the invention, the aspect ratio of the nano-cantilever is 30-180.
According to the embodiment of the invention, the acoustic quality factor of the nano cantilever reaches 1500-2700.
According to the specific embodiment of the invention, the arm width of the nano cantilever is 250nm, and the arm length exceeds 45
The length-width ratio of the cantilever is larger than 180, and the acoustic quality factor reaches 1500.
The invention also provides a chip which comprises the nano cantilever beam prepared by the process.
According to an embodiment of the invention, the chip is an SOI chip.
Aiming at the technical difficulty that the bridge type cantilever beam structure with the width of hundreds of nanometers and the length of tens of micrometers is fragile in mechanical strength, the process avoids collapse of the cantilever beam structure, and successfully realizes preparation of the photoacoustic crystal microcavity. The invention provides a preparation process of a nano cantilever beam with low surface tension, which aims at improving a wet etching process which is necessary for preparing an on-chip suspension structure, and realizes a preparation method of a nano cantilever beam photoacoustic crystal with an ultra-large length-width ratio. Compared with the traditional critical point drying method, the method has simple process, does not need special equipment and reduces the process cost.
Drawings
FIG. 1: the embodiment of the invention provides a schematic flow chart of a preparation process of a nano cantilever.
FIG. 2 is a schematic diagram: the photo of the micro-cavity of the on-chip nano cantilever photoacoustic crystal prepared by the embodiment of the invention.
Fig. 3 and 4: and the micro-cavity photo of the on-chip nano cantilever photoacoustic crystal prepared in comparative example 1.
Detailed Description
The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention. The examples do not specify particular techniques or conditions, and are to be construed in accordance with the description of the art in the literature or with the specification of the product. The reagents or instruments used are conventional products available from regular distributors, not indicated by the manufacturer.
And preparing an on-chip suspension structure, and removing the supporting layer below the structural layer by wet etching to form suspension. The length-width ratio of the suspended waveguide of the photoacoustic crystal microcavity is close to two orders of magnitude, and the photoacoustic crystal microcavity is an extremely thin long bridge structure. During wet etching, because the forces exerted on the molecules in the liquid phase can cancel each other out, but the surface molecules are greatly pulled by the liquid phase molecules and slightly pulled by the gas phase molecules, surface tension is generated during the evaporation of the etching solution, and collapse of the cantilever beam is caused. In the traditional critical point drying method, the characteristic that the surface tension of liquid tends to zero in a critical point state is utilized, so that water in a sample is completely vaporized and discharged in a gas mode in a water critical point state, and the aim of completely drying is fulfilled. The critical point refers to a general term of temperature and pressure when the gaseous phase and the liquid phase of a substance reach the same density and become uniform fluid, so that the traditional critical point drying method needs limit control depending on the state of the water critical point, is difficult to control and is easy to cause the collapse of a suspended structure.
The invention develops research aiming at a wet etching process which is necessary for preparing a suspended structure on a chip, and because the surface tension of different reagents during liquid-phase to gas-phase conversion is different, the surface tension of different liquids during evaporation is given in table 1. It can be seen that absolute ethanol has a surface tension 2 times lower than that of water, and is the common liquid reagent with the lowest surface tension.
TABLE 1 surface tension of different reagents at 298.15K and 101 kPa
(see Journal of Molecular Liquids 2018, 249, 245-253.)
Therefore, the core of the invention is to provide a transition process adopting absolute ethyl alcohol to avoid the control of the traditional critical point drying method on the critical point of the liquid interface state, and reduce the surface tension generated by the evaporation of the solution on the suspended structure through the transition from the etching solution to the absolute ethyl alcohol, so that the collapse of the wet etching nano cantilever beam structure can be effectively avoided, and the process flow is shown in figure 1 and specifically comprises the following steps:
1) Cleaning an SOI substrate, defining a photoacoustic crystal microcavity graph with a nano-arm structure by adopting electron beam exposure, and then carrying out dry etching by adopting an Inductively Coupled Plasma (ICP) method and removing electron beam glue;
2) The chip is subjected to wet etching by using buffered hydrofluoric acid (BHF), and the BHF can corrode and remove SiO below the SOI chip through etching regions on two sides of the nano arm 2 The nanometer arm photoacoustic crystal microcavity is suspended after wet etching;
3) Putting the chip subjected to wet etching into deionized water to stop reaction;
4) After the chip is taken out of the deionized water, absolute ethyl alcohol is required to be put into the chip for transition immediately, so that the collapse of the cantilever beam caused by surface tension generated in the evaporation process of the deionized water is avoided;
5) Taking out and airing to finish the preparation process of the nano cantilever beam.
The nanometer cantilever beam preparation process based on low surface tension reduces the surface tension of a suspended structure caused by solution evaporation through the transition of the final step of etching solution by adopting absolute ethyl alcohol, avoids the collapse of a wet etching nanometer cantilever beam structure, and enables the arm width to be 250nm and the arm length to be more than 45 to be prepared on an SOI (silicon on insulator) sheet
The length-width ratio of the cantilever is larger than 180, and the acoustic quality factor reaches 1500 (see figure 2).
Comparative example 1
The only difference from the above embodiment is: directly taking out from the deionized water for airing after the step 3). As a result, the cantilever beam structure collapses (see fig. 3) and even breaks (see fig. 4).
In conclusion, the invention improves the wet etching process which is necessary for preparing the on-chip suspension structure, provides a set of nano cantilever beam preparation process with low surface tension, provides a transition process adopting absolute ethyl alcohol to avoid the critical point control of the traditional critical point drying method on the liquid interface state, and reduces the surface tension generated by the evaporation of the solution on the suspension structure through the transition from the etching solution to the absolute ethyl alcohol, thereby effectively avoiding the collapse of the wet etching nano cantilever beam structure and realizing the nano cantilever beam photoacoustic crystal preparation method with the ultra-large length-width ratio.
Although the invention has been described in detail hereinabove with respect to a general description and specific embodiments thereof, it will be apparent to those skilled in the art that modifications or improvements may be made thereto based on the invention. Accordingly, it is intended that all such modifications and alterations be included within the scope of this invention as defined in the appended claims.
Claims (10)
1. A preparation process of a nano cantilever is characterized in that a wet etching process is adopted, and comprises the following steps:
putting the chip subjected to wet etching into deionized water to stop reaction;
taking out the chip from the deionized water, and immediately putting the chip into a first solvent for transition; then airing; obtaining the nano cantilever;
the first solvent is selected from one or more of absolute ethyl alcohol, methanol, 1-propanol and 1-butanol.
2. The process for preparing the nano cantilever according to claim 1, wherein the concentration of the absolute ethyl alcohol is not less than 99%.
3. The process for preparing the nano cantilever according to claim 1 or 2, wherein the time for putting the chip subjected to the wet etching into the deionized water to stop the reaction is 15-30s.
4. The process for preparing a nano-cantilever according to claim 1 or 2, wherein the chip is placed in the first solvent for transition within 15-30s after being taken out from the deionized water.
5. The process for preparing the nano-cantilever according to claim 1 or 2, wherein the nano-cantilever is prepared on an SOI substrate.
6. The process for preparing the nano-cantilever according to claim 1 or 2, comprising:
1) Providing a cleaned SOI substrate as a chip, defining a photoacoustic crystal microcavity graph with a nano-arm structure by adopting electron beam exposure, and then carrying out dry etching by adopting an inductive coupling plasma method to remove electron beam glue;
2) Using buffered hydrofluoric acid to perform wet etching on the chip, and removing SiO below the SOI chip by BHF through etching areas on two sides of the nano arm 2 The nanometer arm photoacoustic crystal microcavity is suspended after wet etching;
3) Putting the chip subjected to wet etching into deionized water to stop reaction;
4) Immediately putting the chip into a first solvent for transition after taking the chip out of the deionized water;
5) Then drying the chip in the air; and obtaining the nano cantilever beam.
7. A nanocantilever produced by the process of any one of claims 1 to 6.
8. The nanocantilever of claim 7,
the arm width of the nano cantilever beam is 260-500nm; or the like, or, alternatively,
the arm length of the nano cantilever beam is 15-45
(ii) a Or the like, or a combination thereof,
the length-width ratio of the nano cantilever is 30-180.
9. The nanocantilever of claim 7 or 8, wherein the nanocantilever has an acoustic quality factor in a range of 1500-2700.
10. A chip comprising the nanocantilever of any one of claims 7-9.
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| CN202211611871.8A CN115611232A (en) | 2022-12-15 | 2022-12-15 | Nano cantilever beam and preparation process thereof |
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| CN101592578A (en) * | 2009-06-25 | 2009-12-02 | 上海应用技术学院 | A kind of silicon cantilever sensor and its production and application |
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| US20160153094A1 (en) * | 2014-12-01 | 2016-06-02 | Anish Tuteja | Salt Based Etching of Metals and Alloys for Fabricating Superhydrophobic and Superoleophobic Surfaces |
| CN113192835A (en) * | 2021-04-30 | 2021-07-30 | 清华大学 | Single-layer fluorinated graphene Schottky diode and preparation method and application thereof |
| CN114815066A (en) * | 2022-03-18 | 2022-07-29 | 中山市精量光电子科技有限公司 | Technology for preparing optical fiber end face micro-lens array based on femtosecond laser assisted wet etching |
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2022
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| CN101592578A (en) * | 2009-06-25 | 2009-12-02 | 上海应用技术学院 | A kind of silicon cantilever sensor and its production and application |
| CN102590935A (en) * | 2011-01-10 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Germanium cantilever beam type two-dimensional photonic crystal microcavity and preparation method |
| US20140053869A1 (en) * | 2012-08-27 | 2014-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Maranagoni Dry with Low Spin Speed for Charging Release |
| CN103730332A (en) * | 2012-10-11 | 2014-04-16 | 朗姆研究公司 | Delamination drying apparatus and method |
| US20160153094A1 (en) * | 2014-12-01 | 2016-06-02 | Anish Tuteja | Salt Based Etching of Metals and Alloys for Fabricating Superhydrophobic and Superoleophobic Surfaces |
| CN113192835A (en) * | 2021-04-30 | 2021-07-30 | 清华大学 | Single-layer fluorinated graphene Schottky diode and preparation method and application thereof |
| CN114815066A (en) * | 2022-03-18 | 2022-07-29 | 中山市精量光电子科技有限公司 | Technology for preparing optical fiber end face micro-lens array based on femtosecond laser assisted wet etching |
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