CN115598866A - Optical modulator - Google Patents
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- CN115598866A CN115598866A CN202110768555.0A CN202110768555A CN115598866A CN 115598866 A CN115598866 A CN 115598866A CN 202110768555 A CN202110768555 A CN 202110768555A CN 115598866 A CN115598866 A CN 115598866A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an optical modulator. The optical modulator comprises a substrate, a conductive oxide layer, a dielectric layer and a metal layer; the substrate is provided with a first surface and a second surface which are oppositely arranged, the first surface is provided with at least one groove, the groove wall of the groove comprises two wall surfaces which are oppositely arranged along a set direction, and an included angle of 85-95 degrees is formed between the two wall surfaces; the metal layer at least continuously covers the groove wall of the groove; the conductive oxide layer and the dielectric layer are stacked between the substrate and the metal layer and are used for forming electric connection between the substrate and the metal layer; when modulated light is incident from the second surface of the substrate and a specified bias voltage is applied between the substrate and the metal layer, the absorption of the optical modulator on the light with specified wavelength can be regulated and controlled, and further the modulation of an optical signal is realized. The optical modulator provided by the invention improves the modulation efficiency of the optical modulator.
Description
Technical Field
The invention relates to an optical modulator, in particular to a spatial optical modulator, and belongs to the technical field of optoelectronic devices.
Background
An optical modulator is a device that changes an optical signal by using a driving method such as electricity, heat, or machinery, and has important applications in the fields of optical information processing, optical communication, imaging, display, and the like. The optical modulator may be classified into an optical waveguide modulator that modulates light in a waveguide and a spatial optical modulator that modulates spatially transmitted light according to a transmission mode of an optical signal. The current technologies for implementing spatial light modulators mainly include electro-absorption modulation, electro-optical modulation, liquid crystal, MEMs, and the like. Wherein, the low speed operation of liquid crystal and MEMs modulation cannot meet the application of high speed modulation; the electro-absorption modulation is generally based on gallium arsenide quantum well materials, the cost is high, in addition, the overall structure usually needs the epitaxy of dozens of layers of heterogeneous materials, the process is complex, the uniformity problem of multiple layers of materials also limits the array size, and the modulation depth is also limited; electro-optic modulation is generally based on nonlinear crystalline materials or polymers, devices are bulky, and driving voltages are high.
The book 10, page 2111 of the Nano Letters publication in 2010 reports that a flat capacitor structure is formed on an indium tin oxide film, and the electron concentration distribution at the interface of the indium tin oxide and a dielectric layer can be adjusted under bias voltage, so that the refractive index change of the interface layer is as high as 1, and effective light modulation is expected to be obtained. The volume 1, page 17 of the journal of Nanophotonics in 2012 reports a waveguide modulator integrating an indium tin oxide (ito) plate capacitor structure on a silicon waveguide, and the waveguide modulator obtains a modulation efficiency of 1dB/um, which is far superior to an optical modulator based on traditional materials such as silicon and lithium niobate. However, the spatial light modulator has a problem of low modulation efficiency due to insufficient intensity of the modulated light and the material. An article of 2013 Applied Physics Letters journal 102, no. 221102, reported that a spatial light modulator integrating indium tin oxide into the surface of a metal nanograting, with only less than 1% modulation depth observed. The 2016 Nano Letters journal 16, page 5319, reports that a spatial light modulator with indium tin oxide integrated into a sandwich of metal nanograms and metal mirrors achieves a modulation depth of 20-30%. The 2014, publication of Optics Letters, page 39, page 4978, reports that a high local field mode of exciting a capacitive structure of an indium tin oxide panel by prism coupling is utilized, and a modulation depth of 20% is obtained.
However, the prior art schemes such as the above all have the problem that the preparation of the nano-structure with high cost and low yield or the additional prism coupling mode is required to realize the light modulation, thereby limiting the large-scale application and the realization of the high-integration micro-system.
Disclosure of Invention
It is a primary object of the present invention to provide an optical modulator that overcomes the deficiencies of the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an optical modulator, which comprises a substrate, a conductive oxide layer, a dielectric layer and a metal layer;
the substrate is provided with a first surface and a second surface which are oppositely arranged, the first surface of the substrate is provided with at least one groove, the groove wall of the groove comprises two wall surfaces which are oppositely arranged along a set direction, and an included angle of 85-95 degrees is formed between the two wall surfaces;
the metal layer at least continuously covers the groove wall of the groove; the conductive oxide layer and the dielectric layer are stacked between the substrate and the metal layer and are used for forming electric connection between the substrate and the metal layer; when the modulated light is made to be incident from the second surface of the substrate and a specified bias voltage is applied between the substrate and the metal layer, the absorption of the optical modulator to the light with specified wavelength can be regulated, and further the modulation of an optical signal is realized.
In a specific embodiment, the groove wall of the groove includes two first wall surfaces oppositely arranged along a first direction and two second wall surfaces oppositely arranged along a second direction, the first wall surfaces and the second wall surfaces are both arranged in an inclined manner, an included angle of 85-95 degrees is formed between the two first wall surfaces and between the two second wall surfaces, and the first direction is perpendicular to the second direction.
In a particular embodiment, the angle formed between the two walls is 90 °.
In a specific embodiment, the first surface of the substrate is provided with a plurality of the grooves, and the plurality of the grooves are arranged in parallel along the first direction or the second direction.
In a specific embodiment, the gap between two adjacent grooves is not more than 10% of the distance between the centers of the two adjacent grooves.
In a specific embodiment, the width of the notch of the groove in the set direction is 1 to 100 μm.
In a specific embodiment, the conductive oxide layer is disposed between a dielectric layer and a metal layer, or the dielectric layer is disposed between a conductive oxide layer and a metal layer.
In a specific embodiment, the material of the conductive oxide layer includes a metal oxide.
In a specific embodiment, the metal oxide includes any one or a combination of two or more of indium tin oxide, zinc oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, cadmium oxide, and indium-doped cadmium oxide, but is not limited thereto.
In a specific embodiment, the conductive oxide layer has a thickness of 5 to 50nm.
In a specific embodiment, the material of the dielectric layer includes any one or a combination of two or more of silicon dioxide, silicon nitride, aluminum oxide, magnesium fluoride, hafnium oxide, and zinc selenide, but is not limited thereto.
In a specific embodiment, the thickness of the dielectric layer is 5-50nm.
In a specific embodiment, the material of the metal layer includes any one or a combination of two or more of gold, silver, aluminum, copper, and titanium, but is not limited thereto.
In a specific embodiment, the metal layer has a thickness greater than 50nm.
In a specific embodiment, the metal layer has a thickness of 50 to 100nm.
In a specific embodiment, the substrate comprises a silicon substrate.
In a specific embodiment, the metal layer, the conductive oxide layer and the dielectric layer are continuously and conformally coated on the first surface of the substrate.
In a specific embodiment, the light reflecting structure formed by the groove wall of the groove and the metal layer can reflect the incident light from any angle incident to the light modulator from the second surface of the substrate.
In a specific embodiment, the second surface of the substrate is further coated with an anti-reflection film, the anti-reflection film is used for reducing the reflected light of the second surface and ensuring that the finally reflected light is modulated by the electro-absorption of the conductive oxide, the anti-reflection film can be adopted as known by those skilled in the art, and the thickness and other parameters can be selected according to specific situations and are not limited in particular.
The embodiment of the invention also provides an optical signal modulation method, which comprises the following steps:
providing said light modulator;
and enabling the modulated light to enter the optical modulator from the second surface of the substrate, and applying a specified bias voltage between the substrate and the metal layer, so as to regulate and control the absorption of the optical modulator on the light with specified wavelength, and further realize the modulation of an optical signal.
Compared with the prior art, the invention has the advantages that:
1) According to the optical tuner provided by the embodiment of the invention, the strong local area of incident light in the layer structure of the conductive oxide flat capacitor is realized by arranging the micron-scale V-shaped groove structure on the silicon substrate, so that the dependence on a nano structure or a coupling prism in the prior art is avoided, the manufacturing cost of the optical tuner is reduced, and the optical tuner is beneficial to large-scale and small-scale manufacturing;
2) According to the light tuner provided by the embodiment of the invention, the V-shaped groove structure which is in micron scale and forms a 90-degree included angle is arranged on the silicon substrate, and the surface of the V-shaped groove structure is covered with the metal film, so that the full-angle incident light is reflected in the original path, the light path of a system is further simplified, and the two-time reflection action is beneficial to increasing the modulation depth.
Drawings
For a better understanding of the invention, reference will now be made to the embodiments illustrated in the accompanying simplified drawings, which are schematic illustrations of idealized embodiments of the present invention, the proportions of layers and regions being exaggerated for clarity of presentation but which should not be construed as schematic illustrations as strictly reflecting the geometric relationships of the proportions. The illustrated embodiments of the invention should not be considered limited to the particular shapes of regions illustrated in the drawings, which are schematic representations and should not be considered limiting of the scope of the invention; wherein:
FIG. 1 is a schematic side view of an optical modulator structure according to an exemplary embodiment of the present invention;
FIG. 2a is a schematic top view of a one-dimensionally arranged V-groove structure in a light modulator according to an exemplary embodiment of the present invention;
FIG. 2b is a schematic top view of a two-dimensional array of V-shaped grooves in an optical modulator according to an exemplary embodiment of the present invention;
FIG. 3 is a graph showing the dielectric constant of an ITO material with varying wavelength for different electron concentrations in an optical modulator according to an exemplary embodiment of the present invention;
FIG. 4a is a graph showing the reflection spectra of the layer structure of an ITO plate capacitor of a light modulator with different electron concentrations in the electron accumulation region for different polarized incident light;
FIG. 4b shows the result of modulating P-polarized light by adjusting the electron concentration of the electron accumulation layer in a V-groove light modulator according to an exemplary embodiment of the present invention;
fig. 4c is a side view of an electric field distribution in a V-groove light modulator according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and practice to provide the technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The optical modulator provided by the embodiment of the invention at least comprises a silicon substrate, a groove on the upper surface of the silicon substrate, and a conductive oxide layer, a dielectric layer and a metal layer which are at least continuously and conformally covered on the surface of the groove wall of the groove, wherein the conductive oxide layer and the dielectric layer are stacked between the silicon substrate and the metal layer, and are electrically connected between the silicon substrate and the metal layer, and the relative positions of the upper layer and the lower layer of the conductive oxide layer and the dielectric layer can be exchanged; the silicon substrate, the conductive oxide layer, the dielectric layer and the metal layer form a layer structure of the flat capacitor together, and bias voltage is applied between the silicon substrate and the metal layer to form electron accumulation between the conductive oxide layer and the dielectric layer through a capacitance charging effect;
when a bias voltage is applied between the silicon substrate and the metal layer, an electron accumulation region is formed on one side of the conductive oxide layer close to the dielectric layer, the electron accumulation concentration under different bias voltages is different, the dielectric constant of the electron accumulation region in the conductive oxide layer is related to the concentration of electron accumulation, and incident light with the wavelength can be strongly localized in the electron accumulation region and strongly absorbed by adjusting the bias voltage so that the real part of the dielectric constant of the electron accumulation region is close to zero at a specified wavelength.
Therefore, when modulated light is incident from the lower surface of the silicon substrate, it undergoes two reflections on the sidewalls of the trench, i.e., two reflections act with the above-described plate capacitor structure, and under an appropriate bias, light of a specified wavelength is absorbed by the conductive oxide layer in the plate capacitor structure, thereby achieving intensity modulation of an optical signal.
The embodiment of the invention provides a light tuner, which adopts a micrometer-scale V-shaped groove structure arranged on the surface of one side of a silicon substrate opposite to a light incident surface to realize strong local area of incident light in a conductive oxide flat capacitor layer structure, thereby avoiding the dependence of the prior art on a nano structure or a coupling prism, and promoting low-cost large-scale application and miniaturization; the structure of a V-shaped groove (a groove with an included angle of 90 degrees is preferred) is adopted, and the surface of the V-shaped groove structure is covered with a metal film, so that the incident light at all angles can be reflected in the original path, the light path of the system is simplified, and the modulation depth can be increased by virtue of the two-time reflection.
As will be described in further detail with reference to the accompanying drawings, unless otherwise specified, the silicon substrate, the conductive oxide layer, the dielectric layer, the metal layer, etc. constituting an optical modulator provided by an embodiment of the present invention may be any one known to those skilled in the art.
In a more specific embodiment, referring to fig. 1, a light modulator includes:
a silicon substrate 101, wherein a plurality of V-shaped grooves 102 are arranged on the upper surface (i.e. the first surface, the same below) of the silicon substrate 101, the gap between two adjacent V-shaped grooves is g, and the center distance between two adjacent V-shaped grooves is P; and the number of the first and second groups,
the conductive oxide layer 103, the dielectric layer 104 and the metal layer 105 sequentially cover the surface of the V-shaped groove 102, the conductive oxide layer 103 and the dielectric layer 104 are stacked between the silicon substrate 101 and the metal layer 105, and an electrical connection is formed between the silicon substrate 101 and the metal layer 105, and it should be noted that the positions of the conductive oxide layer 103 and the dielectric layer 104 on the upper layer and the lower layer between the silicon substrate 101 and the metal layer 105 can be exchanged (as shown in fig. 1).
Referring to fig. 1 and 2a, a plurality of V-shaped grooves may be arranged in parallel along the same direction, wherein two sidewalls 102-a and 102-b of each V-shaped groove are oppositely disposed, and an included angle between the two sidewalls 102-a and 102-b is θ, and θ is 85-95 °, preferably 90 °.
Referring to fig. 2b, a plurality of V-shaped grooves may be respectively arranged in parallel along two perpendicular directions, wherein the included angles between two sets of sidewalls 102-1 and 102-3, 102-2 and 102-4 of each V-shaped groove are θ, θ is preferably 90 degrees, and an error may be generated during the actual manufacturing process to deviate from the angle.
Referring to fig. 3, ito is a typical conductive oxide material with a dielectric constant related to electron concentration and conforms to the Drude model:
wherein epsilon ∞ Is a high frequency dielectric constant, ω p For the plasmon oscillation frequency, Γ is the damping constant of the material, n 0 The dielectric constants ε and ω can be seen from the formula (1) for the electron concentration p In this connection, ω is shown by the formula (2) p Depending on the electron concentration, omega can be adjusted by varying the electron concentration p Thereby changing the dielectric constant epsilon of the material.
FIG. 3 shows the electron concentration at 1 x 10 19 cm -3 、1*10 20 cm -3 、3*10 20 cm -3 、5*10 20 cm -3 、 7*10 20 cm -3 The real part and the imaginary part of the dielectric constant of the indium tin oxide are values at different wavelengths; as can be seen from fig. 3, the real part of the dielectric constant of indium tin oxide at different electron concentrations becomes 0 at different wavelengths; for example, when the electron concentration is 7 x 10 20 cm -3 When the real part of the dielectric constant of indium tin oxide becomes 0 at 1500 nm; according to the continuous condition of the electric displacement vector at the interface, the vertical electric field component in the zero dielectric constant material becomes infinite, namely, the strong local area of an electromagnetic field is realized, and the characteristics of light absorption, light nonlinearity and the like can be greatly improved.
The technical solution of the present invention will be described in detail with reference to several preferred embodiments and related drawings.
Example 1
Referring to fig. 1, a layer structure of an optical modulator on a silicon substrate 101 includes, from bottom to top, a V-shaped groove 102, a dielectric layer 104, a conductive oxide layer 103, and a metal layer 105; the plurality of V-shaped grooves 102 are arranged in parallel along the same direction, the gap between two adjacent V-shaped grooves 102 is 0, the central distance between two adjacent V-shaped grooves 102 is 10 micrometers, and the included angle between each V-shaped groove and the two opposite side walls is 90 degrees; the dielectric layer 104 is hafnium oxide with a thickness of 10nm; the conductive oxide layer 103 is indium tin oxide with a thickness of 10nm; the metal layer 105 is a gold film with a thickness of 200nm.
Specifically, when a bias voltage is applied between the metal layer 105 and the silicon substrate 101, an electron accumulation layer is formed between the indium tin oxide 103 and the hafnium oxide 104, and the thickness of the electron accumulation layer is about 1nm.
Specifically, in a four-layer plate capacitor layer structure such as si-ito-hafnia-au, the calculated reflectance spectra are shown in fig. 4a when s-polarized and p-polarized light is incident at 45 ° directions, respectively; as can be seen from fig. a, s-polarized light cannot excite the electromagnetic field mode strongly localized in the electron accumulation layer because of the absence of the electric field component perpendicular to the layer structure interface, and therefore the reflection spectrum has no significant difference under different electron concentrations of the electron accumulation layer; and p polarized light is 1 x 10 under two different electron concentrations 20 cm -3 (on)、6.5*10 20 cm -3 The reflectance spectrum at (off) shows a large difference, especially from 89% to 36% at 1520nm, enabling a significant electrically driven modulation of the light intensity.
Specifically, considering that the actual structure of p-polarized light incident to the V-shaped groove will undergo two reflections and then return in the original direction, the result of the reflection spectrum under the electron concentration of the electron accumulation layer caused by different bias voltages is shown in fig. 4b, as can be seen from fig. 4, at different wavelengths, different degrees of light intensity modulation can be obtained by adjusting the electron concentration, and particularly, 82% of relative modulation depth is obtained at 1520 nm; moreover, proper selection of the bias voltage can achieve excellent light modulation performance over a wide spectral range, for example, when the electron concentration of the electron accumulation layer is 1 × 10 20 cm -3 (on) and 5 x 10 20 cm -3 (off) also a relative modulation depth of 75% or more was obtained at 1720 nm; fig. 4c shows the electron concentration of the electron accumulation layer as 6.5 x 10 20 cm -3 In this case, the electric field distribution in the V-shaped groove at 1520nm wavelength is shown in side view, and as can be seen from FIG. 4c, the electric field component is strongly localized in the electron accumulation layer and is thus efficiently absorbed, and thus the above-mentioned excellent light modulation performance is obtained.
According to the optical tuner provided by the embodiment of the invention, the strong local area of incident light in the layer structure of the conductive oxide flat capacitor is realized by arranging the micron-scale V-shaped groove structure on the silicon substrate, so that the dependence on a nano structure or a coupling prism in the prior art is avoided, the manufacturing cost of the optical tuner is reduced, and the large-scale and small-scale manufacturing of the optical tuner is facilitated.
According to the light tuner provided by the embodiment of the invention, the micron-scale V-shaped groove structure is arranged on the silicon substrate, and the surface of the V-shaped groove structure is covered with the metal film, so that the full-angle incident light is reflected in the original path, the light path of the system is simplified, and the modulation depth is increased by virtue of the two-time reflection; in addition, the optical modulator provided by the embodiment of the invention adopts the conductive oxide plate capacitor to realize optical modulation, so that the modulation efficiency of the optical modulator is improved (obviously higher than that of materials such as silicon, lithium niobate and the like).
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. An optical modulator is characterized by comprising a substrate, a conductive oxide layer, a dielectric layer and a metal layer;
the substrate is provided with a first surface and a second surface which are oppositely arranged, the first surface of the substrate is provided with at least one groove, the groove wall of the groove comprises two wall surfaces which are oppositely arranged along a set direction, and an included angle of 85-95 degrees is formed between the two wall surfaces;
the metal layer at least continuously covers the groove wall of the groove; the conductive oxide layer and the dielectric layer are stacked between the substrate and the metal layer and are used for forming electric connection between the substrate and the metal layer; when modulated light is incident from the second surface of the substrate and a specified bias voltage is applied between the substrate and the metal layer, the absorption of the optical modulator on the light with specified wavelength can be regulated and controlled, and further the modulation of an optical signal is realized.
2. The light modulator of claim 1, wherein: the cell wall in groove includes two first walls that set up relatively along the first direction and two second walls that set up relatively along the second direction, first wall, second wall all incline to set up, and two between the first wall and two all form 85-95 contained angles between the second wall, first direction and second direction mutually perpendicular.
3. A light modulator as claimed in claim 1 or 2 wherein: the included angle formed between the two wall surfaces is 90 degrees.
4. A light modulator as claimed in claim 1 or 2 wherein: the first surface of the substrate is provided with a plurality of grooves which are arranged in parallel along a first direction or a second direction.
5. The light modulator of claim 4, wherein: the gap between two adjacent grooves is not more than 10% of the distance between the centers of the two adjacent grooves.
6. The light modulator of claim 1, wherein: the width of the notch of the groove in the set direction is 1-100 μm.
7. The light modulator of claim 1, wherein: the conductive oxide layer is arranged between the dielectric layer and the metal layer, or the dielectric layer is arranged between the conductive oxide layer and the metal layer.
8. The optical modulator of claim 1 or 7, wherein: the material of the conductive oxide layer comprises metal oxide, preferably, the metal oxide comprises any one or the combination of more than two of indium tin oxide, zinc oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, cadmium oxide and indium-doped cadmium oxide; preferably, the thickness of the conductive oxide layer is 5-50nm;
and/or the material of the dielectric layer comprises any one or the combination of more than two of silicon dioxide, silicon nitride, aluminum oxide, magnesium fluoride, hafnium oxide and zinc selenide; preferably, the thickness of the dielectric layer is 5-50nm;
and/or the material of the metal layer comprises any one or the combination of more than two of gold, silver, aluminum, copper and titanium; preferably, the thickness of the metal layer is more than 50nm; preferably, the thickness of the metal layer is 50-100nm;
and/or the substrate comprises a silicon substrate.
9. The light modulator of claim 1, wherein: the metal layer, the conductive oxide layer and the dielectric layer are all continuously and conformally covered on the first surface of the substrate.
10. The light modulator of claim 1, wherein: the second surface of the substrate is also coated with an anti-reflection film.
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| CN202110768555.0A CN115598866A (en) | 2021-07-07 | 2021-07-07 | Optical modulator |
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| CN202110768555.0A CN115598866A (en) | 2021-07-07 | 2021-07-07 | Optical modulator |
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