CN115588678A - Charge coupling device and preparation method thereof - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Abstract
The invention provides a charge coupled device and a preparation method thereof, and the charge coupled device comprises: a functional layer; a silicon semiconductor layer located on a surface of the functional layer; the colloid quantum dot semiconductor layer is positioned on one side of the silicon semiconductor layer, which is far away from the functional layer; the colloid quantum dot semiconductor layer has the characteristic of short wave infrared absorption and is used for absorbing photons and converting the photons into electric charges. The charge coupled device utilizes the colloid quantum dot semiconductor layer to absorb infrared light rays of a specific waveband, and can achieve a higher spectrum detection range than a traditional silicon-based charge coupled device.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a charge coupled device and a preparation method of the charge coupled device.
Background
A CCD (Charge Coupled Device) is an image sensor for digital imaging, usually made of silicon material, and is a Device with a MOS pixel structure. The operation of the CCD device comprises four steps: absorption-storage-transfer-readout. Based on the absorption characteristic of silicon to light, the conventional CCD can realize the absorption of photons with the wavelength of 300-1100nm, and photon signals in pixels are converted into electronic signals and stored in gate capacitors of MOS structures of corresponding pixels; by regulating the gate voltage of the MOS tube, the charges of different pixels stored in the gate capacitor can be sequentially transferred to the shift register, and signal reading is realized through the last reading circuit.
At present, the CCD mainly includes a surface channel type CCD and a buried channel type CCD. The CCD of the surface type channel consists of a gate electrode/a dielectric layer/P-type Si, the capacitance for storing charges of the CCD mainly comes from the capacitance of the gate dielectric layer, the interface between the dielectric layer and the P-type Si has the highest potential point, and electrons are collected to the interface to form an inversion layer; however, since the silicon surface has many defect sites, charges stored at the interface are easily trapped by the interface defects, and therefore, the buried-channel type CCD realizes the potential peak inward shift and away from the silicon interface by introducing a layer of highly doped N-type silicon between the dielectric layer and the P-type silicon.
Because the silicon material can only absorb photons below 1100nm, the CCD can only image visible light and near infrared light below 1100nm, but cannot detect short-wave infrared light above 1100 nm. In recent years, short-wave infrared imaging is increasingly applied to the fields of food detection, article sorting, semiconductor detection and the like, so that a CCD (charge coupled device) needs to realize a higher spectral detection range while maintaining the charge transfer characteristic.
Disclosure of Invention
The invention provides a charge coupled device and a preparation method of the charge coupled device.
In order to solve the above technical problems, a first technical solution provided by the present invention is: there is provided a charge coupled device comprising: a functional layer; the silicon semiconductor layer is positioned on the surface of the functional layer; the colloid quantum dot semiconductor layer is positioned on one side of the silicon semiconductor layer, which is far away from the functional layer; the colloid quantum dot semiconductor layer has the short wave infrared absorption characteristic and is used for absorbing photons and converting the photons into electric charges.
Wherein the functional layer comprises: the functional layer includes: a carrier sheet, a gate layer and an insulating layer; the gate layer is located on the surface of the carrier sheet; the insulating layer is positioned on one side of the gate layer away from the carrier sheet, and the silicon semiconductor layer is positioned on one side of the insulating layer away from the carrier sheet; alternatively, the functional layer includes a gate electrode layer and an insulating layer; the insulating layer is located on one surface of the grid layer, and the silicon semiconductor layer is located on one side, far away from the grid layer, of the insulating layer.
Wherein the colloidal quantum dot semiconductor layer comprises a metal oxide film; the material of the metal oxide film is a material with an absorption coefficient smaller than a threshold value for visible light and near infrared light.
The colloid quantum dot semiconductor layer comprises a metal oxide film, a colloid quantum dot film and a transparent conductive film; the metal oxide film is arranged on one side, close to the silicon semiconductor layer, of the colloid quantum dot film, or the metal oxide film is arranged on one side, far away from the silicon semiconductor layer, of the colloid quantum dot film; the transparent conductive film is arranged above the colloid quantum dot film; the colloid quantum dot film comprises at least one of a lead sulfide quantum dot film, a lead selenide quantum dot film and a mercury telluride quantum dot film; the material of the metal oxide film is a material with an absorption coefficient smaller than a threshold value for visible light and near infrared light.
The metal oxide film is made of an N-type semiconductor material; wherein the material of the metal oxide film comprises at least one of zinc oxide, tin dioxide and titanium dioxide.
Wherein the transparent conductive film is at least one of indium tin oxide and fluorine-doped SnO2 film.
The silicon semiconductor layer comprises an N-type silicon semiconductor layer, a P-type silicon semiconductor layer and a P + + type silicon substrate; the N-type silicon semiconductor layer is arranged on the surface of one side of the insulating layer, the P + + type silicon substrate is arranged close to the colloid quantum dot semiconductor layer, and the P-type silicon semiconductor layer is arranged between the N-type silicon semiconductor layer and the P + + type silicon substrate; the N-type silicon semiconductor layer is realized by means of ion implantation.
Wherein the dielectric constant of the insulating layer is greater than a preset value.
Wherein the gate layer is provided with a plurality of patterned arrays.
In order to solve the above technical problems, a second technical solution provided by the present invention is: a preparation method of a charge coupled device is provided, which comprises the following steps: preparing a silicon semiconductor layer; arranging a functional layer on one surface of the silicon semiconductor layer; the silicon semiconductor layer is far away from one side of the functional layer is provided with a colloid quantum dot semiconductor layer, and the colloid quantum dot semiconductor layer has short wave infrared absorption characteristics and is used for absorbing photons and converting the photons into electric charges.
The beneficial effects of the invention are different from the prior art, and the charge coupled device comprises: a functional layer; a silicon semiconductor layer located on a surface of the functional layer; the colloid quantum dot semiconductor layer is positioned on one side of the silicon semiconductor layer, which is far away from the functional layer; the colloid quantum dot semiconductor layer has short wave infrared absorption characteristic and is used for receiving light. The colloidal quantum dots can realize the adjustment of band gaps by adjusting the size of nano particles of the colloidal quantum dots, can realize the light absorption in a 250-2500nm wave band range by adjusting the size of CQD, and has higher absorption coefficient and can fully absorb short-wave infrared light due to quantum confinement effect. The solution processability of the CQD thin film can ensure stronger substrate compatibility, and the high-quality CQD thin film can be prepared on different substrates by solution method integration methods such as spin coating, spray coating and printing. That is, the colloidal quantum dot semiconductor layer 15 has a short wave infrared absorption characteristic, and has both a photoelectric effect and a field effect. This application sets up colloid quantum dot semiconductor layer on silicon semiconductor layer's surface, can utilize the infrared absorption characteristic of short wave of colloid quantum dot, makes the device have the absorption characteristic similar with the quantum dot, is different from traditional charge-coupled device and can only survey visible light and near-infrared light below 1100nm, and this device can realize the spectral detection scope of highest to 2500 nm. The charge coupled device can realize a higher spectrum detection range.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
FIG. 1 is a schematic structural diagram of a first embodiment of a charge-coupled device according to the present invention;
FIG. 2 is a schematic flow chart of a first embodiment of a method for fabricating a charge coupled device according to the present invention;
fig. 3 is a schematic flow chart of a method for manufacturing a charge coupled device according to a second embodiment of the present invention.
Detailed description of the invention
The terms "first", "second" and "third" in this application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any indication of the number of technical features indicated. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise. In the embodiment of the present application, all directional indicators (such as up, down, left, right, front, rear \8230;) are used only to explain the relative positional relationship between the components, the motion situation, etc. at a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
The embodiments described in the embodiments of the present application are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, a schematic structural diagram of a charge coupled device according to a first embodiment of the present invention is shown, and specifically, the charge coupled device includes a functional layer 10, a silicon semiconductor layer 14, and a colloidal quantum dot semiconductor layer 15. Wherein, a silicon semiconductor layer 14 is positioned on the surface of the functional layer 10; the colloid quantum dot semiconductor layer 15 is positioned on one side of the silicon semiconductor layer 14 far away from the functional layer 10; the colloidal quantum dot semiconductor layer 15 has a short wave infrared absorption characteristic and is used for receiving light.
Specifically, colloidal Quantum Dots (CQDs) are nano materials, the adjustment of band gaps of the colloidal Quantum dots can be realized by adjusting the size of nano particles of the colloidal Quantum dots, the light absorption in a 250-2500nm wave band range can be realized by adjusting the size of the PbS CQDs, and the colloidal Quantum dots have high absorption coefficients due to Quantum confinement effect and can fully absorb short-wave infrared light. And the solution processability of the CQD thin film can ensure the strong substrate compatibility, and the high-quality CQD thin film can be prepared on different substrates by solution method integration methods such as spin coating, spray coating, printing and the like. That is, the colloidal quantum dot semiconductor layer 15 has a short wave infrared absorption characteristic, and has both a photoelectric effect and a field effect. The colloid quantum dot semiconductor layer 15 is arranged on the surface of the silicon semiconductor layer 14, the short-wave infrared absorption characteristic of the colloid quantum dots can be utilized, the device has the absorption characteristic similar to that of the quantum dots, the device is different from the traditional charge coupled device and can only detect visible light and near infrared light below 1100nm, and the device can achieve the spectrum detection range up to 2500 nm.
In one embodiment, the functional layer 10 comprises: carrier sheet 11 and a metal layer, a gate dielectric layer, which, as will be appreciated, is gate layer 12 and a gate dielectric layer is insulating layer 13. Wherein gate layer 12 is located on a surface of carrier sheet 11; an insulating layer 13 is positioned on one side of the gate layer 12 away from the carrier plate 11, and a silicon semiconductor layer 14 is positioned on one side of the insulating layer 13 away from the carrier plate 11.
In another embodiment, the functional layer 10 comprises: metal and a gate dielectric layer, it is understood that the metal layer is the gate electrode layer 12, and the gate dielectric layer is the insulating layer 13. The insulating layer 13 is located on a surface of the gate layer 12, and the silicon semiconductor layer 14 is located on a side of the insulating layer 13 away from the gate layer 12.
The gate layer 12 is provided with a plurality of patterned arrays. The patterned array is a pixel.
In one embodiment, the colloidal quantum dot semiconductor layer 15 includes a metal oxide thin film. The material of the metal oxide thin film is a material having an absorption coefficient smaller than a threshold value for visible light and near infrared light. For example, the material of the metal oxide thin film is an N-type semiconductor material; specifically, the material of the metal oxide thin film comprises at least one of zinc oxide, tin dioxide and titanium dioxide.
In one embodiment, the colloidal quantum dot semiconductor layer 15 includes a metal oxide thin film, a colloidal quantum dot thin film, and a transparent conductive thin film. The metal oxide film is arranged on one side, close to the silicon semiconductor layer, of the colloid quantum dot film, or the metal oxide film is arranged on one side, far away from the silicon semiconductor layer, of the colloid quantum dot film; the transparent conductive film is arranged above the colloid quantum dot film; the material of the metal oxide film is a material with an absorption coefficient smaller than a threshold value for visible light and near infrared light.
Specifically, in one embodiment, the colloidal quantum dot semiconductor layer 15 sequentially includes, from bottom to top (from the carrier plate to the silicon semiconductor layer 14): metal oxide film, colloid quantum dot film, transparent conductive film. Alternatively, in another embodiment, the colloidal quantum dot semiconductor layer 15 sequentially comprises, from bottom to top (from the direction of the carrier sheet to the direction of the silicon semiconductor layer 14): colloidal quantum dot film, metal oxide film, and transparent conductive film.
Wherein, the transparent conductive film is at least one film of indium tin oxide and SnO2 film doped with fluorine. The colloid quantum dot film comprises at least one of a lead sulfide quantum dot film, a lead selenide quantum dot film and a mercury telluride quantum dot film.
In the present embodiment, the silicon semiconductor layer 14 includes an N-type silicon semiconductor layer, a P-type silicon semiconductor layer, and a P + + type silicon substrate; the N-type silicon semiconductor layer is arranged on the surface of one side of the insulating layer, the P + + type silicon substrate is arranged close to the colloid quantum dot semiconductor layer, and the P-type silicon semiconductor layer is arranged between the N-type silicon semiconductor layer and the P + + type silicon substrate; the N-type silicon semiconductor layer is realized by means of particle implantation. In one embodiment, the doping concentration of the N-type silicon semiconductor is 1e15cm at normal temperature -3 ～5e17cm -3 The doping concentration of the P-type silicon semiconductor at normal temperature is 1e12cm -3 ～5e15cm -3 The doping concentration of the P + + type silicon semiconductor at room temperature is 1e15cm -3 ～5e21cm -3 In between.
Specifically, the P-type silicon semiconductor layer is a lightly doped P-type doped layer. The N-type silicon semiconductor layer is N-type heavy doping, and the N-type heavy doping is realized in an ion injection mode, namely the N-type silicon semiconductor layer is realized in a particle injection mode. The dielectric constant of the insulating layer 13 is greater than a preset value.
In the embodiment of the present application, the silicon semiconductor layer 14 is a wide bandgap semiconductor.
The working principle of the colloid quantum dot semiconductor layer in the application is as follows: a built-in electric field is formed in the colloid quantum dot semiconductor layer, and the direction of the electric field is favorable for electrons to move to the grid electrode; when the charge coupled device is irradiated by short-wave infrared light from the upper part, corresponding photons are absorbed by the colloid quantum dots and converted into electron-hole, the electrons move to the grid under the action of the built-in electric field and move to the silicon semiconductor structure, and the electrons are collected in the silicon semiconductor structure under the action of drifting and diffusion; the holes are collected by the transparent conductive film under the action of the built-in electric field. In general, a negative bias is applied to one side of the transparent conductive film, and a positive bias is applied to one side of the gate, so that the width of a depletion region in the colloidal quantum dot film is increased, and the built-in electric field intensity is increased. The intensity of the simultaneous illumination can be reflected by the number of electrons collected.
The charge coupled device array is usually prepared by adopting a standard semiconductor process, the charge coupled device is compatible with the current standard semiconductor process, and a colloid quantum dot semiconductor layer of the charge coupled element can be prepared by a solution method, so that the processing and manufacturing cost of the device is greatly reduced.
The charge coupled device is based on the existing CCD structure, and can integrate the colloid quantum dot CQD which is an infrared sensitive material into the CCD through a simple integration method on the basis of not generating large structural change. The colloid quantum dot semiconductor layer is prepared on the back-illuminated charge coupled device to be used as a light absorption material, so that the device has the absorption characteristic similar to that of the quantum dot, is different from the traditional charge coupled device which can only detect visible light and near infrared light below 1100nm, can realize the spectral detection range up to 2500nm, and has partial spectral response of the quantum dot. Because the CQD can realize high-efficiency absorption on light in a wide spectral range of 250-2500nm, the CCD device integrated with the CQD can also realize detection on the light in the wide spectral range. The preparation method of the solution method can also be used for preparing the colloid quantum dot semiconductor layer as a light absorption layer of the CCD, is beneficial to optimizing the process steps, and has lower cost and fewer process steps compared with surface treatment technologies such as black silicon and the like.
Fig. 2 is a schematic flow chart of a method for manufacturing a charge coupled device according to an embodiment of the present invention, which includes:
step S21: and preparing a silicon semiconductor layer.
Specifically, the silicon semiconductor layer includes an N-type silicon semiconductor layer, a P-type silicon semiconductor layer, and a P + + type silicon substrate.
In one embodiment, a P + + type silicon substrate is provided first, and a P type silicon semiconductor layer is epitaxially grown on a surface of the P + + type silicon substrate, as shown in step 1 in fig. 3. Then, an N-type silicon semiconductor layer is formed on the P-type silicon semiconductor layer by ion implantation, specifically referring to step 2 in fig. 3.
In one embodiment, the N-type silicon semiconductor has a doping concentration of 1e15cm at room temperature -3 ～5e17cm -3 The doping concentration of the P-type silicon semiconductor at normal temperature is 1e12cm -3 ～5e15cm -3 The doping concentration of the P + + type silicon semiconductor at room temperature is 1e15cm -3 ～5e21cm -3 In the meantime.
Step S22: and arranging a functional layer on the surface of the silicon semiconductor layer.
Specifically, the preparation of the functional layer comprises:
preparing an insulating layer on the N-type silicon semiconductor layer, and preparing a gate electrode layer on the insulating layer. Then, the ACF glue is used to bond the carrier plate and the gate layer together, as shown in step 3 in FIG. 3. And finally, grinding the surface of the carrier sheet far away from the grid layer. In one embodiment, the carrier sheet can be completely polished away; in another embodiment, the carrier sheet can be ground to a predetermined thickness, see step 4 of FIG. 3. That is, if the carrier sheet is completely ground away, the functional layers include only the insulating layer and the gate layer; if the carrier sheet is ground to a predetermined thickness, the functional layers include the carrier sheet, the insulating layer, and the gate layer.
Step S23: and arranging a colloid quantum dot semiconductor layer on one side of the silicon semiconductor layer, which is far away from the functional layer.
Specifically, a metal oxide layer, a colloid quantum dot layer and a transparent conducting layer are sequentially prepared on the surface of the P + + type silicon substrate far away from the functional layer. The positions of the metal oxide layer and the colloid quantum dots can be interchanged, that is, the colloid quantum dot layer, the metal oxide layer and the transparent conducting layer can be sequentially prepared on the surface of the P + + type silicon substrate far away from the functional layer.
It should be noted that the carrier plate of the device is a silicon wafer, and all processes are prepared based on this epitaxial wafer.
It should be noted that the carrier plate, the gate layer, the insulating layer, the silicon semiconductor layer, and the colloidal quantum dot semiconductor in this embodiment are the same as those shown in fig. 1, and are not repeated herein.
The charge coupled device is based on the existing CCD structure, and can integrate the colloid quantum dot CQD which is an infrared sensitive material into the CCD through a simple integration method on the basis of not generating large structural change. The colloid quantum dot semiconductor layer is prepared on the back-illuminated charge coupled device to be used as a light absorption material, so that the device has the absorption characteristic similar to that of the quantum dot, is different from the traditional charge coupled device which can only detect visible light and near infrared light below 1100nm, can realize the spectral detection range up to 2500nm, and has partial spectral response of the quantum dot. Since the CQD can achieve high-efficiency absorption of light in a wide spectral range of 250-2500nm, the CCD device incorporating the CQD can also achieve detection of light in this wide spectral range. The method of the solution method can also be used for preparing the colloid quantum dot semiconductor layer as a light absorption layer of the CCD, is beneficial to optimizing the process steps, and has lower cost and fewer process steps compared with surface treatment technologies such as black silicon and the like.
The above description is only an implementation method of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent flow transformations made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A charge coupled device, comprising:
a functional layer;
the silicon semiconductor layer is positioned on the surface of the functional layer;
the colloid quantum dot semiconductor layer is positioned on one side of the silicon semiconductor layer, which is far away from the functional layer; the colloid quantum dot semiconductor layer has the characteristic of short wave infrared absorption and is used for absorbing photons and converting the photons into electric charges.
2. The charge coupled device of claim 1, wherein the functional layer comprises: a carrier sheet, a gate layer and an insulating layer;
the gate layer is located on the surface of the carrier sheet;
the insulating layer is positioned on one side of the gate layer away from the carrier sheet, and the silicon semiconductor layer is positioned on one side of the insulating layer away from the carrier sheet; alternatively, the first and second liquid crystal display panels may be,
the functional layer comprises a gate electrode layer and an insulating layer;
the insulating layer is located on one surface of the grid layer, and the silicon semiconductor layer is located on one side, far away from the grid layer, of the insulating layer.
3. The charge coupled device of claim 1, wherein the colloidal quantum dot semiconductor layer comprises a metal oxide thin film;
the material of the metal oxide film is a material with an absorption coefficient smaller than a threshold value for visible light and near infrared light.
4. The charge coupled device of claim 1, wherein the colloidal quantum dot semiconductor layer comprises a metal oxide film, a colloidal quantum dot film, and a transparent conductive film;
the metal oxide film is arranged on one side, close to the silicon semiconductor layer, of the colloid quantum dot film, or the metal oxide film is arranged on one side, far away from the silicon semiconductor layer, of the colloid quantum dot film; the transparent conductive film is arranged above the colloid quantum dot film; the colloid quantum dot film comprises at least one of a lead sulfide quantum dot film, a lead selenide quantum dot film and a mercury telluride quantum dot film;
the material of the metal oxide film is a material with an absorption coefficient smaller than a threshold value for visible light and near infrared light.
5. The charge coupled device of claim 3 or 4, wherein the material of the metal oxide thin film is an N-type semiconductor material;
wherein the material of the metal oxide film comprises at least one of zinc oxide, tin dioxide and titanium dioxide.
6. The charge coupled device of claim 4, wherein the transparent conductive film is at least one of Indium Tin Oxide (ITO) and fluorine-doped SnO2 film.
7. The charge coupled device of claim 2, wherein the silicon semiconductor layer comprises an N-type silicon semiconductor layer, a P-type silicon semiconductor layer, and a P + + type silicon substrate;
the N-type silicon semiconductor layer is arranged on the surface of one side of the insulating layer, the P + + type silicon substrate is arranged close to the colloid quantum dot semiconductor layer, and the P-type silicon semiconductor layer is arranged between the N-type silicon semiconductor layer and the P + + type silicon substrate;
the N-type silicon semiconductor layer is realized by means of particle implantation.
8. The charge coupled device of claim 2, wherein the dielectric constant of the insulating layer is greater than a predetermined value.
9. A charge coupled device according to claim 2, wherein the gate layer is provided with a plurality of patterned arrays.
10. A method for manufacturing a charge coupled device, comprising:
preparing a silicon semiconductor layer;
arranging a functional layer on one surface of the silicon semiconductor layer;
the silicon semiconductor layer is far away from one side of the functional layer is provided with a colloid quantum dot semiconductor layer, and the colloid quantum dot semiconductor layer has short wave infrared absorption characteristics and is used for absorbing photons and converting the photons into electric charges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211362393.1A CN115588678A (en) | 2022-11-02 | 2022-11-02 | Charge coupling device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211362393.1A CN115588678A (en) | 2022-11-02 | 2022-11-02 | Charge coupling device and preparation method thereof |
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| Publication Number | Publication Date |
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| CN115588678A true CN115588678A (en) | 2023-01-10 |
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