CN115588665A - Micro LED device and preparation method thereof - Google Patents
Micro LED device and preparation method thereof Download PDFInfo
- Publication number
- CN115588665A CN115588665A CN202211575948.0A CN202211575948A CN115588665A CN 115588665 A CN115588665 A CN 115588665A CN 202211575948 A CN202211575948 A CN 202211575948A CN 115588665 A CN115588665 A CN 115588665A
- Authority
- CN
- China
- Prior art keywords
- layer
- chip
- chips
- disposed
- micro led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000004806 packaging method and process Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 217
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 2
- 238000012546 transfer Methods 0.000 abstract description 10
- 238000004020 luminiscence type Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 8
- 239000011265 semifinished product Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a Micro LED device and a preparation method thereof, the Micro LED device comprises a substrate, and a chip packaging layer and a rewiring layer which are sequentially arranged on the substrate, wherein a plurality of light-emitting chips are alternately stacked in the chip packaging layer, an adhesion layer is arranged between the chip packaging layer and the substrate, an insulating layer is arranged between the chip packaging layer and the rewiring layer, and the Micro LED device also comprises a metal connecting layer for connecting the rewiring layer and the light-emitting chips. Through crisscross range upon range of setting up a plurality of luminescence chip in the chip package layer, be about to originally be in a plurality of chips of coplanar and divided into a plurality of, and then reduced the degree of difficulty that the plane was makeed to shift, encapsulate the chip through layering in batches, the design interval between every layer of chip has been increaseed in other words, has eliminated the influence that the chip has shifted on the plane to follow-up chip of waiting to shift promptly, has reduced the transfer degree of difficulty, improves machining efficiency and yield.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Micro LED device package and a preparation method thereof.
Background
The Micro LED display technology is a display technology which takes self-luminous micrometer-scale LEDs as light-emitting pixel units and assembles the light-emitting pixel units on a driving panel to form a high-density LED array. Due to the characteristics of small size, high integration level, self-luminescence and the like of the Micro LED chip, compared with an LCD and an OLED, the Micro LED chip has the advantages of brightness, resolution, contrast, energy consumption, service life, response speed, thermal stability and the like in the aspect of display. The Micro LED (Nano LED) chip inherits the characteristics of high efficiency, high brightness, high reliability, quick reaction time and the like of an inorganic LED, has the characteristic of self luminescence without a backlight source, and has the advantages of energy conservation, simple mechanism, small volume, thinness and the like.
In the prior art, when a micro RGB-LED device is manufactured, a chip with a length and width of 50-400 μm is often manufactured on a 4-inch epitaxial wafer, after the manufacturing process is completed, an epitaxial wafer can be formed into chips with hundreds of thousands of orders of magnitude, then grinding, cutting and spot measurement and sorting are performed, finally, chips with three wave bands of blue, green and red are packaged separately, each chip of red, green and blue jointly forms a display chip, so that the display screen exists as a pixel point, a large number of the display chips need to be arranged on a circuit substrate in an array manner, in the arrangement process of the chips, the micro red, green and blue LED chips need to be sequentially transferred to the circuit substrate in a batch manner (mass transfer), and then packaged, the packaging is completed, the cutting according to a specific size is performed to obtain the manufacturing process of the required chips, and in the mass transfer process, the ordered arrangement of tens of chips on a plane is difficult and time-consuming.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a Micro LED device package and a preparation method thereof, aiming at solving the technical problem that the huge transfer operation is difficult in the prior art.
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides a Micro LED device, includes the substrate and locates in proper order chip packaging layer and rewiring layer on the substrate, the range upon range of formula is equipped with a plurality of and sends out light chip in the chip packaging layer, a plurality of stagger the setting between the light chip, chip packaging layer with be equipped with the insulating layer between the rewiring layer, micro LED device is still including connecting rewiring layer with send out light chip's metal connecting layer.
Compared with the prior art, the invention has the beneficial effects that: through setting up the substrate, set up the chip packaging layer on the substrate, the rewiring layer, the internal range upon range of formula of chip packaging is equipped with a plurality of luminescence chip, be equipped with the insulating layer between chip packaging layer and the rewiring layer, this packaging structure is still including the metal connecting layer of connecting rewiring layer and luminescence chip, through crisscross range upon range of setting up luminescence chip in the chip packaging layer, a plurality of chips that are about to originally be in the coplanar have been divided into a plurality of, and then reduced the degree of difficulty that the plane was makeed to shift, encapsulate the chip through layering in batches, the design interval between every layer of chip has been increaseed equivalently, the influence of the chip that has shifted on the plane to follow-up chip of waiting to shift has been eliminated promptly, the degree of difficulty of shifting has been reduced, can shift the chip on the whole wafer fast based on the adhesion difference.
According to one aspect of the above technical solution, an adhesion layer is disposed between the chip packaging layer and the substrate, the chip packaging layer includes a first filling layer, a second filling layer and a third filling layer sequentially disposed on the adhesion layer, and the light emitting chip includes a first chip disposed in the first filling layer, a second chip disposed in the second filling layer and a third chip disposed in the third filling layer.
According to an aspect of the above technical solution, the first chip, the second chip and the third chip are stacked in a step-like manner.
According to above-mentioned technical scheme's an aspect, the metal connection layer is including locating the first metal column of pin one side of first chip, first metal column is including being located the intraformational first spliced pole of second packing and being located the third packing in situ with first spliced pole corresponds the second spliced pole that sets up, seted up on the insulating layer with the second spliced pole corresponds the first groove of dodging that sets up, rewiring layer is including being located the first wiring portion of dodging the inslot.
According to an aspect of the above technical scheme, the metal connection layer includes a second metal column disposed on one side of a pin of the second chip, the second metal column is located in the third filling layer, a second avoidance groove corresponding to the second metal column is formed in the insulating layer, and the redistribution layer includes a second wiring portion located in the second avoidance groove.
According to an aspect of the foregoing technical solution, a third avoidance groove corresponding to a pin of the third chip is formed in the insulating layer, and the redistribution layer includes a third wiring portion located in the third avoidance groove.
According to one aspect of the technical scheme, the Micro LED device further includes a protective layer disposed on the redistribution layer, and the protective layer is provided with a pad hole disposed corresponding to the redistribution layer.
The invention provides a preparation method of a Micro LED device on the other hand, which comprises the following steps:
providing a substrate;
transferring a plurality of first chips on the substrate, and filling gaps of the first chips to form a first filling layer;
transferring a plurality of second chips on the first filling layer, bonding first connecting columns on pins of the first chips, and filling gaps between the plurality of second chips and the first connecting columns to form a second filling layer;
transferring a plurality of third chips on the second filling layer, bonding second connecting columns on the first connecting columns, bonding second metal columns on pins of the second chips, and filling gaps among the plurality of third chips, the second connecting columns and the second metal columns to form a third filling layer;
preparing an insulating layer on the third filling layer, and patterning the insulating layer to expose the second connecting column, the second metal column and a part of metal area at the pin of the third chip;
preparing a rewiring layer on the insulating layer;
and grinding, thinning, polishing and cutting the packaged LED chip structure to obtain the Micro LED device.
According to an aspect of the foregoing technical solution, the step of transferring the plurality of first chips on the substrate specifically includes:
providing an adhesion layer on the substrate;
transferring a number of first chips on the adhesive layer.
According to an aspect of the foregoing technical solution, before the step of grinding the packaged LED chip structure, the method further includes:
and preparing a protective layer on the rewiring layer, and patterning the protective layer to expose the pad area in the rewiring layer.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a cross-sectional view of a Micro LED device according to a first embodiment of the present invention;
FIG. 2 is a cross-sectional view of a Micro LED device according to a second embodiment of the present invention;
FIG. 3 is a cross-sectional view of a Micro LED device according to a third embodiment of the present invention;
FIG. 4 is a cross-sectional view of the structure of the semi-finished product produced in step (2) of the fourth embodiment of the present invention;
FIG. 5 is a cross-sectional view of the structure of the semi-finished product produced in step (3) of the fourth embodiment of the present invention;
FIG. 6 is a cross-sectional view of the structure of the semi-finished product produced in step (4) of the fourth embodiment of the present invention;
FIG. 7 is a cross-sectional view of the structure of the semi-finished product produced in step (5) of the fourth embodiment of the present invention;
FIG. 8 is a cross-sectional view of the structure of the semi-finished product produced in step (6) of the fourth embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a semi-finished product produced in step (7) of the fourth embodiment of the present invention, in which a portion is a structural cross-sectional view and b portion is a structural top view;
FIG. 10 is a cross-sectional view of the structure of the semi-finished product produced in step (8) of the fourth embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a semi-finished product produced in step (9) of the fourth embodiment of the present invention, in which part c is a structural cross-sectional view and part d is a structural top view;
the main components in the figure are illustrated by symbols:
the chip comprises a substrate 1, an adhesion layer 2, a first filling layer 3, a first chip 4, a second filling layer 5, a first connecting column 6, a second chip 7, a third filling layer 8, a third chip 9, a second connecting column 10, an insulating layer 11, a rewiring layer 12, a protective layer 13 and a second metal column 14.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Various embodiments of the present invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a Micro LED device in a first embodiment of the present invention is shown, and includes a substrate 1, and a chip packaging layer, a redistribution layer 12, and a protection layer 13 sequentially disposed on the substrate 1, wherein a plurality of light emitting chips are stacked in the chip packaging layer in a staggered manner, an adhesion layer 2 is disposed between the chip packaging layer and the substrate 1, an insulation layer 11 is disposed between the chip packaging layer and the redistribution layer 12, and the Micro LED device further includes a metal connection layer connecting the redistribution layer 12 and the light emitting chips.
Specifically, in the Micro LED device in this embodiment, by providing the substrate 1, a chip package layer, a redistribution layer 12, and a protection layer 13 are disposed on the substrate 1, the chip package layer includes light emitting chips stacked in a staggered manner and a chip package layer for packaging the light emitting chips, an adhesion layer 2 is disposed between the chip package layer and the substrate 1, an insulation layer 11 is disposed between the chip package layer and the redistribution layer 12, the package structure further includes a metal connection layer for connecting the redistribution layer 12 and the light emitting chips, the light emitting chips are stacked in the chip package layer in a staggered manner to form the chip package layer, that is, a plurality of chips originally located on the same plane are divided into a plurality of parts by layers, so that the difficulty of plane bulk transfer is reduced, the chips are packaged in batches, and the chips on the entire wafer can be transferred quickly based on the adhesion difference.
Specifically, in the present embodiment, the chip packaging layer includes a first filling layer 3, a second filling layer 5 and a third filling layer 8 sequentially disposed on the adhesion layer 2, and the light emitting chip includes a first chip 4 disposed in the first filling layer 3, a second chip 7 disposed in the second filling layer 5 and a third chip 9 disposed in the third filling layer 8. In some application scenarios of this embodiment, when the light emitting chips are packaged, the first chips 4 are first transferred on the adhesion layer 2 in an array arrangement, and the first chips 4 may be a plurality of chips of the same type cut from a wafer, and only one chip of the same type needs to be transferred in the first filling layer 3, compared with the prior art in which a plurality of blue, red, and green chips need to be transferred in sequence on the same plane, in order to prevent the transferred chip from affecting the chips to be transferred subsequently, the equipment needs to meet higher transfer accuracy.
Preferably, in the present embodiment, the first chip 4, the second chip 7 and the third chip 9 are stacked in a stepped manner, that is, the first chip 4 is located on the left side of the first filling layer 3, the second chip 7 is located in the middle of the second filling layer 5, and the third chip 9 is located on the right side of the third filling layer 8.
Further, above-mentioned metal connection layer is including locating the first metal column of pin one side of first chip 4, first metal column is including being located first spliced pole 6 in the second filling layer 5 and being located correspond the second spliced pole 10 that sets up with first spliced pole 6 in the third filling layer 8, seted up on the insulating layer 11 with the first groove of dodging that second spliced pole 10 corresponds the setting, rewiring layer 12 is including being located the first wiring portion of dodging the inslot. Furthermore, the metal connection layer includes a second metal pillar 14 disposed on one side of the pin of the second chip 7, the second metal pillar 14 is located in the third filling layer 8, a second avoidance groove corresponding to the second metal pillar 14 is disposed on the insulating layer 11, the redistribution layer 12 includes a second wiring portion located in the second avoidance groove, a third avoidance groove corresponding to the pin of the third chip 9 is disposed on the insulating layer 11, and the redistribution layer 12 includes a third wiring portion located in the third avoidance groove.
Preferably, in the present embodiment, the first metal pillar and the second metal pillar 14 are both copper pillars, and the manufacturing method of the copper pillars may be electroplating, chemical plating, vapor deposition, and the like.
As can be seen from the above, the first chip 4, the second chip 7, and the third chip 9 are stacked in a stepwise manner, so that the metal connection layer can be easily provided, and the rewiring layer 12 can be connected to the bonding (lead) of any one of the chips through the copper pillar.
In addition, in this embodiment, the first chip 4, the second chip 7 and the third chip 9 are respectively one of a red chip, a blue chip and a green chip, and the types of the first chip 4, the second chip 7 and the third chip 9 are different from each other. Specifically, in the present embodiment, the first chip 4 is a red chip, the second chip 7 is a blue chip, and the third chip 9 is a green chip. In other embodiments of the present invention, the arrangement order of the chips may be set as required, for example, the first chip 4 is a green chip, the second chip 7 is a red chip, and the third chip 9 is a blue chip.
Further, in this embodiment, the protection layer 13 is provided with a pad hole corresponding to the redistribution layer 12.
Specifically, the first wiring portion, the second wiring portion and the third wiring portion are respectively disposed corresponding to two positive and negative pins of the first chip, the second chip and the third chip, the Micro LED device includes three different light emitting chips, each chip includes a positive pin and a negative pin, in this embodiment, the number of the pads is four, the pad holes are disposed corresponding to the pads, and are electrically connected to a circuit component through the pad holes, one of the pads is simultaneously connected with the three negative pins of the three light emitting chips, the other three pads correspond to the positive pins of the three light emitting chips, and by controlling the current intensity output to the positive pins, the light intensity of the corresponding light emitting chips can be controlled, so as to emit any color light based on the three primary color light emitting chips.
In summary, in the Micro LED device in the above embodiment of the present invention, the substrate 1 is provided, the chip package layer, the redistribution layer 12 and the protection layer 13 are disposed on the substrate 1, the chip package layer includes the light emitting chips stacked in a staggered manner and the chip package layer for packaging the light emitting chips, the adhesion layer 2 is disposed between the chip package layer and the substrate 1, the insulation layer 11 is disposed between the chip package layer and the redistribution layer 12, the package structure further includes the metal connection layer connecting the redistribution layer 12 and the light emitting chips, the light emitting chips are stacked in the chip package layer in a staggered manner to form the chip package layer, i.e., the chips originally located in the same plane are divided into several parts, thereby reducing the difficulty of transferring the huge amount of the plane, the chips are packaged in batches by layering, which is equivalent to enlarging the design interval between each layer of chips, i.e., eliminating the influence of the transferred chips on the subsequent chips to be transferred on the plane, reducing the transfer difficulty, and the chips on the whole wafer can be transferred quickly based on the adhesion difference.
Referring to fig. 2, a Micro LED device in a second embodiment of the present invention is shown, the structure of the Micro LED device in the second embodiment is substantially the same as that of the Micro LED device in the first embodiment, except that:
in the present embodiment, the first chip, the second chip, and the third chip are stacked alternately, the first chip 4 is located in the middle of the first filling layer 3, the second chip 7 is located on the left side of the second filling layer 5, and the third chip 9 is located on the right side of the third filling layer 8.
Referring to fig. 3, a Micro LED device in a third embodiment of the present invention is shown, where the structure of the Micro LED device in this embodiment is substantially the same as that of the Micro LED device in the first embodiment, and the difference is:
in this embodiment, the first chip, the second chip and the third chip are stacked alternately, the first chip 4 is located on the right side of the first filling layer 3, the second chip 7 is located on the left side of the second filling layer 5, and the third chip 9 is located in the middle of the third filling layer 8.
The fourth embodiment of the invention provides a Micro LED device preparation method, which comprises the following steps:
(1) A substrate 1 is provided. In this step, the substrate 1 may be made of a transparent polymer material such as sapphire, glass, quartz, etc., and preferably, the sapphire substrate 1 is used in this embodiment.
(2) An adhesion layer 2 is prepared on the substrate 1. Specifically, the preparation process of the adhesion layer 2 may be performed by spin coating, rolling, etc. after polishing the sapphire, or after patterning the PSS, and preferably, in this embodiment, the preparation process of the adhesion layer 2 is performed by spin coating after polishing the sapphire substrate 1, so that it is easy to understand that the structure of the product obtained after this step is as shown in fig. 4.
(3) Transferring a plurality of first chips 4 on the adhesion layer 2, and filling gaps of the plurality of first chips 4 to form a first filling layer 3. Specifically, the first chip 4 is a red chip, and the structure of the product obtained after this step is as shown in fig. 5.
(4) Transferring a plurality of second chips 7 on the first filling layer 3, bonding first connecting columns 6 on pins of the first chip 4, and filling gaps between the plurality of second chips 7 and the first connecting columns 6 to form a second filling layer 5. Specifically, the second chip 7 is a blue chip, and the structure of the product obtained after this step is as shown in fig. 6.
(5) Transfer a plurality of third chip 9 on second filling layer 5, and bond second spliced pole 10 on first spliced pole 6 bond second metal post 14 on the pin of second chip 7, to a plurality of the clearance between third chip 9, second spliced pole 10 and the second metal post 14 is filled in order to form third filling layer 8. Specifically, the third chip 9 is a green chip, specifically, in this embodiment, the first connection pillar 6 and the second connection pillar 10 form a first metal pillar, the first metal pillar and the second metal pillar 14 are both copper pillars, the first filling layer 3, the second filling layer 5 and the third filling layer 8 are prepared by the same process, the packaging material is made of transparent, semi-transparent and semi-transparent black materials such as silica gel, epoxy resin, polyimide, PET, and the like, and preferably, in this embodiment, the third filling layer 8 is prepared by spraying, the packaging material is made of silica gel, so that it is easy to understand, and a product structure obtained after this step is as shown in fig. 7.
(6) Preparing an insulating layer 11 on the third filling layer 8, and patterning the insulating layer 11 to expose the second connection pillar 10, the second metal pillar 14, and a part of the metal region at the pin of the third chip 9. Specifically, the insulating layer 11 is prepared by any one of vapor deposition, chemical plating, spin coating, spray coating, mold pressing and film pasting, the insulating layer 11 is made of a high polymer material or an inorganic non-metal material, preferably, the insulating layer 11 is prepared by vapor deposition, the insulating layer 11 is made of a high polymer material, and the structure of the product obtained after the step is easily understood as shown in fig. 8.
(7) A rewiring layer 12 is prepared on the insulating layer 11. For ease of understanding, the resulting product structure after this step is shown in fig. 9.
(8) Preparing a protective layer 13 on the redistribution layer 12, and patterning the protective layer 13 to expose a pad area in the redistribution layer 12, thereby completing the packaging of the LED chip. For ease of understanding, the resulting product structure after this step is shown in fig. 10.
(9) And grinding, thinning, polishing and cutting the packaged LED chip structure to obtain the Micro LED device. For ease of understanding, the resulting product structure after this step is shown in fig. 11.
To sum up, in the method for manufacturing a Micro LED device in this embodiment, an adhesion layer 2 is first prepared on a substrate 1, a first chip 4 of a plurality of three-color chips is then transferred on the adhesion layer 2, the first chip 4 is then encapsulated by a first filling layer 3, a second chip 7 of the plurality of three-color chips is transferred on the first filling layer 3, the transfer of the second chip 7 is not affected by the first chip 4, a first connecting pillar 6 is disposed at a lead of the first chip 4 to connect the first chip 4 for facilitating the subsequent connection to the first chip 4, the second chip 7 and the first connecting pillar 6 are then encapsulated by a second filling layer 5, a third chip 9 is disposed on the second filling layer 5, the transfer of the third chip 9 is not affected by the first chip 4 and the second chip 7, and a second metal pillar 14 is disposed at a lead of the second chip 7, conveniently connecting the second chip 7 subsequently, arranging a second connecting column 10 at the first connecting column 6, forming a first metal column connected with the first chip 4 at the first connecting column 6 and the second connecting position, subsequently arranging an insulating layer 11 on the third filling layer 8, exposing pin metal parts of the first metal column, a second metal column 14 and a third chip 9 by imaging the insulating layer 11, arranging a rewiring layer 12 on the insulating layer 11, respectively connecting the first metal column and the second metal column 14 through the rewiring layer 12 to communicate the first chip 4 with the second chip 7 and simultaneously connect pins of the third chip 9, completing the connection of three-color chips, further preparing a protective layer 13 on the rewiring layer 12, exposing a pad area in the rewiring layer 12 by imaging the protective layer 13, and finally grinding the packaged LED chip structure, and thinning, polishing and cutting to obtain the Micro LED device.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. The Micro LED device is characterized by comprising a substrate, a chip packaging layer and a rewiring layer, wherein the chip packaging layer and the rewiring layer are sequentially arranged on the substrate, a plurality of light-emitting chips are arranged in the chip packaging layer in a stacked mode and are arranged in a staggered mode, an insulating layer is arranged between the chip packaging layer and the rewiring layer, and the Micro LED device further comprises a metal connecting layer which is connected with the rewiring layer and the light-emitting chips.
2. A Micro LED device according to claim 1, wherein an adhesion layer is disposed between the chip encapsulation layer and the substrate, the chip encapsulation layer includes a first filling layer, a second filling layer and a third filling layer sequentially disposed on the adhesion layer, and the light emitting chip includes a first chip disposed in the first filling layer, a second chip disposed in the second filling layer and a third chip disposed in the third filling layer, respectively.
3. A Micro LED device according to claim 2, wherein the first, second and third chips are arranged in a stepped stack.
4. The Micro LED device according to claim 2, wherein the metal connection layer comprises a first metal pillar disposed on one side of the first chip, the first metal pillar comprises a first connection pillar disposed in the second filling layer and a second connection pillar disposed in the third filling layer and corresponding to the first connection pillar, a first avoiding groove disposed in the insulating layer and corresponding to the second connection pillar is disposed on the insulating layer, and the redistribution layer comprises a first wiring portion disposed in the first avoiding groove.
5. A Micro LED device according to claim 2, wherein the metal connection layer includes a second metal pillar disposed on one side of the pin of the second chip, the second metal pillar is disposed on the third filling layer, a second avoiding groove corresponding to the second metal pillar is disposed on the insulating layer, and the redistribution layer includes a second wiring portion disposed in the second avoiding groove.
6. The Micro LED device according to claim 2, wherein the insulating layer is provided with a third avoiding groove corresponding to the pin of the third chip, and the redistribution layer comprises a third wiring portion located in the third avoiding groove.
7. A Micro LED device according to any of claims 1 to 6, further comprising a protective layer disposed on the redistribution layer, the protective layer having a pad hole disposed corresponding to the redistribution layer.
8. A preparation method of a Micro LED device is characterized by comprising the following steps:
providing a substrate;
transferring a plurality of first chips on the substrate, and filling gaps of the first chips to form a first filling layer;
transferring a plurality of second chips on the first filling layer, bonding first connecting columns on pins of the first chips, and filling gaps between the plurality of second chips and the first connecting columns to form a second filling layer;
transferring a plurality of third chips on the second filling layer, bonding second connecting columns on the first connecting columns, bonding second metal columns on pins of the second chips, and filling gaps among the plurality of third chips, the second connecting columns and the second metal columns to form a third filling layer;
preparing an insulating layer on the third filling layer, and patterning the insulating layer to expose the second connecting column, the second metal column and a part of metal area at the pin of the third chip;
preparing a rewiring layer on the insulating layer;
and grinding, thinning, polishing and cutting the packaged LED chip structure to obtain the Micro LED device.
9. A method of fabricating a Micro LED device according to claim 8, wherein the step of transferring the first plurality of chips on the substrate specifically comprises:
providing an adhesion layer on the substrate;
transferring a number of first chips on the adhesive layer.
10. A method of fabricating a Micro LED device according to claim 8, wherein prior to the step of grinding the packaged LED chip structure, the method further comprises:
and preparing a protective layer on the rewiring layer, and patterning the protective layer to expose the pad area in the rewiring layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211575948.0A CN115588665A (en) | 2022-12-09 | 2022-12-09 | Micro LED device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211575948.0A CN115588665A (en) | 2022-12-09 | 2022-12-09 | Micro LED device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115588665A true CN115588665A (en) | 2023-01-10 |
Family
ID=84783165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211575948.0A Pending CN115588665A (en) | 2022-12-09 | 2022-12-09 | Micro LED device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115588665A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160163940A1 (en) * | 2014-12-05 | 2016-06-09 | Industrial Technology Research Institute | Package structure for light emitting device |
| CN109216329A (en) * | 2017-07-07 | 2019-01-15 | 鸿富锦精密工业（深圳）有限公司 | Miniature LED display panel and preparation method thereof |
| CN110462850A (en) * | 2017-03-20 | 2019-11-15 | 香港北大青鸟显示有限公司 | By stacking the layer of miniature LED come manufacturing semiconductor devices |
| US20200273945A1 (en) * | 2019-02-22 | 2020-08-27 | Vuereal Inc. | Staggered and tile stacked microdevice integration and driving |
| CN113097189A (en) * | 2019-12-23 | 2021-07-09 | 佛山市国星光电股份有限公司 | Full-color display module and display device |
| CN114334923A (en) * | 2021-12-23 | 2022-04-12 | 厦门士兰明镓化合物半导体有限公司 | Display screen, Micro-LED display substrate and preparation method thereof |
| CN115064528A (en) * | 2022-04-29 | 2022-09-16 | 诺视科技(苏州)有限公司 | Pixel unit for semiconductor device, manufacturing method thereof and micro display screen |
| CN115172403A (en) * | 2022-08-02 | 2022-10-11 | 江西兆驰半导体有限公司 | Packaging method of Micro LED |
-
2022
- 2022-12-09 CN CN202211575948.0A patent/CN115588665A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160163940A1 (en) * | 2014-12-05 | 2016-06-09 | Industrial Technology Research Institute | Package structure for light emitting device |
| CN110462850A (en) * | 2017-03-20 | 2019-11-15 | 香港北大青鸟显示有限公司 | By stacking the layer of miniature LED come manufacturing semiconductor devices |
| CN109216329A (en) * | 2017-07-07 | 2019-01-15 | 鸿富锦精密工业（深圳）有限公司 | Miniature LED display panel and preparation method thereof |
| US20200273945A1 (en) * | 2019-02-22 | 2020-08-27 | Vuereal Inc. | Staggered and tile stacked microdevice integration and driving |
| CN113097189A (en) * | 2019-12-23 | 2021-07-09 | 佛山市国星光电股份有限公司 | Full-color display module and display device |
| CN114334923A (en) * | 2021-12-23 | 2022-04-12 | 厦门士兰明镓化合物半导体有限公司 | Display screen, Micro-LED display substrate and preparation method thereof |
| CN115064528A (en) * | 2022-04-29 | 2022-09-16 | 诺视科技(苏州)有限公司 | Pixel unit for semiconductor device, manufacturing method thereof and micro display screen |
| CN115172403A (en) * | 2022-08-02 | 2022-10-11 | 江西兆驰半导体有限公司 | Packaging method of Micro LED |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021129361A1 (en) | Micro led chip integrated in array and manufacturing method therefor | |
| TWI411091B (en) | Light emitting diode package | |
| US20100163892A1 (en) | Led device and method of packaging the same | |
| CN209880656U (en) | LED array packaging structure | |
| US20150097202A1 (en) | Light-emitting diode | |
| CN113594194B (en) | Stacked structure, display screen and display device | |
| CN101728470A (en) | Light-emitting diode device and method for fabricating the same | |
| US20200350298A1 (en) | Micro semiconductor stacked structure and electronic apparatus having the same | |
| CN101388426B (en) | Manufacturing process of light-emitting semiconductor wafer and light-emitting semiconductor component | |
| CN102347436A (en) | LED (Light-emitting Diode) device and wafer-level LED device as well as packaging structure of LED device and wafer-level LED device | |
| TWI277222B (en) | LED module and method of packing the same | |
| CN109755375A (en) | The encapsulating structure and packaging method of fan-out-type LED | |
| CN113380935B (en) | LED integrated packaging body and display device | |
| US20200287112A1 (en) | Package structure and electronic device | |
| CN219371024U (en) | Pixel unit and display panel | |
| CN115588665A (en) | Micro LED device and preparation method thereof | |
| CN113948620B (en) | Integrated miniature LED chip and manufacturing method thereof | |
| TWI685987B (en) | Micro-die module transfer method | |
| WO2021036297A1 (en) | Light-emitting chip and light-emitting unit | |
| TWI835978B (en) | Light-emitting device | |
| CN209804710U (en) | Fan-out type LED packaging structure and electronic display screen | |
| CN113782553A (en) | Mass transfer Micro LED module, display screen and manufacturing method | |
| US20240332264A1 (en) | Pixel package | |
| CN115274945B (en) | Micro-LED chip packaging method | |
| CN113380766B (en) | LED integrated chip and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20230110 |
|
| RJ01 | Rejection of invention patent application after publication |