CN115575461A - Semiconductor type gas sensor and gas detection device with same - Google Patents
Semiconductor type gas sensor and gas detection device with same Download PDFInfo
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- CN115575461A CN115575461A CN202211203220.5A CN202211203220A CN115575461A CN 115575461 A CN115575461 A CN 115575461A CN 202211203220 A CN202211203220 A CN 202211203220A CN 115575461 A CN115575461 A CN 115575461A
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
Abstract
The invention discloses a semiconductor type gas sensor which comprises a substrate, wherein a heating layer, an electrode layer and a gas-sensitive material layer are sequentially arranged on the substrate, the heating layer is provided with connecting ends arranged in the head-tail direction, the electrode layer at least comprises two groups of electrodes which are arranged in a staggered manner, the electrodes are provided with connecting ends arranged in the head-tail direction, and the connecting ends of the electrodes are mutually staggered with the connecting ends of the heating layer; the gas-sensitive material layer is coated on the substrate and covers the adjacent connecting ends between the electrodes, so that each electrode is electrically communicated. The invention also discloses a gas detection device provided with the semiconductor gas sensor. Compared with the prior art, the gas sensor has the advantages of simple structure, small volume, good sensitivity and high stability, and is suitable for further miniaturization of products. The gas detection device has the advantages of high integration level, convenient use and high accuracy, and better meets the requirements of users.
Description
Technical Field
The present invention relates to the field of gas sensors, and more particularly, to a semiconductor gas sensor and a gas detection device provided with the same.
Background
The gas sensor is a main component for detecting the concentration of a gas, and the gas sensor is classified into a semiconductor gas sensor, a catalytic combustion gas sensor, a thermal conductivity gas sensor, an electrochemical gas sensor, an infrared gas sensor, a PID photoionization gas sensor, and the like according to its operation principle. Semiconductor type gas sensors and electrochemical type gas sensors are more widely applied in the market at present.
The semiconductor type gas sensor is mainly manufactured by applying the principle that the conductivity of some metal oxide semiconductor materials changes along with the change of the concentration of environmental gas at a specific temperature, and is mainly used for the leakage detection and the fireproof safety detection of combustible gas. The semiconductor type gas sensor has the advantages of low cost, simple manufacture, high sensitivity, high response speed, long service life, simple circuit and the like, and becomes one of the main gas sensor types in the industry. However, the conventional semiconductor type gas sensor has the defects of poor selectivity to gas or smell, dispersion of element parameters, non-ideal stability, high power consumption and the like because the conventional semiconductor type gas sensor needs to work at high temperature, and the development of the semiconductor type gas sensor is restricted.
Secondly, the existing semiconductor gas sensor has a complex structure and a large volume, is not convenient to be integrated into a miniaturized device, and restricts the development of the semiconductor gas sensor.
Disclosure of Invention
The present invention is directed to overcoming at least one of the above-mentioned disadvantages of the prior art, and providing a semiconductor type gas sensor having a simple structure and a high integration level.
The invention also provides a gas detection device which has the effects of simple structure and convenience in use.
In order to achieve the technical effect, the technical scheme adopted by the invention is as follows:
a semiconductor type gas sensor comprises a substrate, wherein a heating layer, an electrode layer and a gas sensitive material layer are sequentially arranged on the substrate, the electrode layer comprises two groups of electrodes which are independently arranged, and the two electrodes are respectively provided with a connecting end; the heating layer is provided with two connecting ends, and the two connecting ends of the heating layer and the connecting end of the electrode are mutually independent; gas sensitive material layer coat in on zone of heating and the electrode layer, two links of zone of heating with two links of electrode layer expose respectively outside the gas sensitive material layer, just between two electrodes on the electrode layer, through the gas sensitive material layer is connected, realizes the electric property intercommunication.
In the technical scheme, the heating layer is used for heating the gas-sensitive material layer, the gas-sensitive material layer is made of metal oxide, the gas-sensitive material layer has stable characteristics at normal temperature, but at a specific heating temperature, the gas-sensitive material layer generates activity after being heated, and oxygen ions expressed as the metal oxide bind electrons in the electrode layer, so that the electrons are difficult to flow; when the gas to be detected (reducing gas) exists in the air, the oxygen ions of the metal oxide react with the gas to be detected, so that electrons in the electrode layer can be freely recovered, namely, the electrons flow smoothly, the resistance value of the electrode layer is changed, and the resistance value of the electrode layer is changed along with the change of the concentration of the gas to be detected. Therefore, based on the measured resistance value, the concentration of the gas to be measured can be obtained.
In one embodiment, the electrode layer and the heating layer are arranged on the substrate in a staggered manner, and two electrodes of the electrode layer are arranged in a staggered manner.
In one embodiment, the two electrodes of the electrode layer and the heating layer are respectively designed to be rectangular electric wave-shaped structures, and the rectangular electric wave-shaped structures of the electrode layer and the rectangular electric wave-shaped structures of the heating layer are orthogonally distributed.
Specifically, when the rectangular electric wave structure of the electrode layer is arranged in the transverse direction and the rectangular electric wave structure of the heating layer is arranged in the longitudinal direction; or the rectangular electric wave structure of the electrode layer is longitudinally arranged, and the rectangular electric wave structure of the heating layer is transversely arranged.
In one embodiment, a temperature adjusting resistor is further arranged on the substrate, and the temperature adjusting resistor is arranged in parallel with the heating layer.
In one embodiment, the substrate is a silicon-based material, the heating layer is a heating resistor, the electrode layer is an interdigital electrode, and the heating resistor and the interdigital electrode are respectively etched on the upper surface of the substrate.
According to the technical scheme, the heating resistor and the interdigital electrode are etched on the upper surface of the substrate, so that the size of the sensor can be effectively reduced, and the sensor can be conveniently integrated into miniaturized mobile equipment, portable equipment or equipment with narrow space.
Further, the heating resistor is made of metal platinum.
In one embodiment, the gas-sensitive material of the gas-sensitive material layer comprises one or more of tin oxide, tungsten oxide, cerium oxide, titanium oxide, zinc oxide and indium oxide; and the gas-sensitive material is deposited on the upper surface of the electrode layer by an EBM technology.
The traditional coating method of the gas sensitive material layer is dispensing or printing. The coating amount cannot be accurately controlled by a dispensing mode, so that the thickness of the gas sensitive material layer is large, and the consistency is poor. The thickness of the printing mode is also large, which is not suitable for users. According to the technical scheme, an EBM technology, namely an electron beam melting technology, is adopted, the deposition temperature of the EBM technology is 150 ℃, the evaporation rate is 2A/s, and the thickness of the gas-sensitive material can be set according to different application scenes. Preferably, the gas-sensitive material is SnO 2 The thickness of the vapor deposition is 50-1000 nm. The technical scheme achieves the aim by adopting the EBM technologyThe obtained product has good quality and more accurate thickness, and the size of the sensor is favorably reduced.
In one embodiment, the substrate is a silicon substrate, and silicon oxide or silicon nitride is deposited on the substrate and below the heating layer in advance by a PECVD technique to serve as a support layer.
In the technical scheme, silicon oxide and silicon nitride deposited by the PECVD technology are mainly used as supporting layers of the suspended membrane structure. The suspended membrane structure mainly has the functions of heat preservation and heat insulation for a heating source.
In one embodiment, the heating layer and/or the electrode layer is formed by depositing a metal electrode by PVD technique; the metal electrode is metal Pt, mo or Ni atoms.
The metal electrodes of Pt, mo, ni and the like deposited on the heating layer by the PVD technology are mainly used for heating and belong to heating electrodes. The electrode layer is formed by depositing Pt, mo, ni and other metal electrodes by PVD technology.
In another embodiment, the electrode layer is formed by an electrode plate with a capacitive structure. In this technical solution, the electrode layer may also be formed by an electrode plate that can form a capacitor structure.
In one embodiment, silicon oxide or silicon nitride is deposited between the heating layer and the electrode layer by PECVD technique as an insulating layer for insulating and isolating the heating layer and the electrode layer.
In the technical scheme, the PECVD technology is a plasma enhanced chemical vapor deposition method, and the deposition method has good film forming quality and better meets the requirements of users. The PVD technology is a process that the surface of a material source is gasified into gaseous atoms or molecules or is partially ionized into ions by a physical method under a vacuum condition and low-pressure gas or plasma is adopted, and has the advantages that the thickness of a coating can be accurately controlled and the consistency is good.
In one embodiment, the size of the substrate is 2-5 mm; the thickness of the gas sensitive material layer is 30-100nm.
The utility model provides a gas detection device, includes the casing, is provided with the gas passage who is used for allowing the entering of external gas on the casing, is provided with PCB circuit board and foretell semiconductor formula gas sensor in the casing, semiconductor gas sensor sets up on PCB circuit board, just the link of zone of heating and electrode layer is connected to respectively on PCB circuit board, PCB circuit board is used for the signal of telecommunication conversion of semiconductor gas sensor to digital signal output.
Through setting up the PCB circuit board to signal conversion carries out, thereby converts the resistance signal of sensor into digital signal output, more convenient to use. Specifically, a data processing module is integrated on the PCB, and the resistance signal can be operated and processed by the data processing module to convert the resistance signal into a digital signal for output.
In one embodiment, an activated carbon filtering device or a hydrogen permeable membrane or a waterproof and breathable membrane is arranged on the gas through hole.
Specifically, the activated carbon filter device can filter organic gases and part of macromolecular gases, and therefore can be used in an environment for detecting toxic and harmful leakage gases, such as carbon monoxide gas, hydrogen sulfide gas and the like. The hydrogen permeable membrane serves to block gas other than hydrogen gas and allow only hydrogen gas to pass through, and thus can be used to detect hydrogen gas. The waterproof breathable film mainly plays a role in waterproofing, and most of gas can pass through the waterproof breathable film. Therefore, it can also be used to detect odor or leakage of chemicals, etc.
Furthermore, the material of the hydrogen permeable membrane layer is one or more of aluminum oxide, silicon oxide or silicon nitride.
In one embodiment, the gas-sensitive material layer is coated with a hydrogen-permeable film layer or a waterproof breathable film layer.
Further, the hydrogen permeable film layer and/or the waterproof gas permeable film layer may be deposited on the gas sensitive material layer by a physical vapor deposition technique. The thickness of both is preferably 500 to 800nm.
In one embodiment, a calibration module is disposed on the PCB, and the calibration module is used for correcting the difference of the electric signal changes of different gas sensors under the same concentration.
Compared with the prior art, the invention has the beneficial effects that:
the gas sensor has the advantages of simple structure, small volume, good sensitivity and high stability, and is suitable for further miniaturization of products. The gas detection device has the advantages of high integration level, convenience in use, high accuracy and wide application range, and meets the requirements of users.
Drawings
FIG. 1 is a sectional view of example 1 of the present invention.
Fig. 2 is a top view of embodiment 1 of the present invention.
FIG. 3 is a cross-sectional view of example 2 of the present invention.
Fig. 4 is a top view of embodiment 2 of the present invention.
Detailed Description
The drawings are only for purposes of illustration and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example 1
As shown in fig. 1 and fig. 2, the present embodiment discloses a semiconductor type gas sensor, which includes a substrate 110, preferably, the substrate 110 is a silicon substrate layer, wherein a heating layer 120 and an electrode layer 130 are etched on the silicon substrate layer, specifically, the heating layer 120 is a platinum heating resistor, the electrode layer 130 is an interdigital electrode, and the interdigital electrode is two groups of independently arranged electrodes; and the two electrodes are respectively provided with a connecting end; wherein, the heating layer 120 has two connecting ends, and the two connecting ends of the heating layer 120 and the two connecting ends of the interdigital electrodes are independent of each other to avoid short circuit.
Further, a gas sensitive material layer 140 is coated on the silicon substrate 110 layer, the gas sensitive material layer 140 covers the heating layer 120 and the electrode layer 130, two connection ends of the heating layer 120 and two connection ends of the electrode layer 130 are respectively exposed out of the gas sensitive material layer 140, and two electrodes on the electrode layer 130 are connected through the gas sensitive material layer 140 to realize electrical communication. Specifically, the material of the gas sensing material layer 140 is a metal oxide, and the metal oxide generates activity when heated.
Preferably, in the technical scheme, silicon oxide or silicon nitride is deposited on the silicon substrate layer in advance through a PECVD technology, the silicon oxide or the silicon nitride is mainly used as a supporting layer of the suspended membrane structure, and the suspended membrane structure mainly has the functions of heat preservation and heat insulation on a heating source. The heating layer 120 is disposed above the support layer, and the heating layer 120 is mainly formed by depositing a metal electrode by PVD technique; the metal electrode can be metal Pt, mo or Ni atoms, is mainly used for heating and belongs to a heating electrode. On the heating layer 120, silicon oxide or silicon nitride is deposited by PECVD technique, which mainly serves an insulating function to insulate and isolate the heating electrode from the electrode layer 130. The electrode layer 130 is formed mainly by depositing a metal electrode by PVD technique; the metal electrode may be metal Pt, mo or Ni atoms to form an interdigital electrode structure, or the electrode layer 130 may also be an electrode plate forming a capacitor structure. The gas-sensitive material layer 140 is formed by depositing tin oxide, tungsten oxide, cerium oxide, titanium oxide, zinc oxide, or indium oxide mainly by EBM technology, and is used for sensing various VOC gases; when the air contains VOC gas, the VOC gas is obtained by reflecting the resistance change of the gas-sensitive material.
Specifically, the working principle of the technical scheme is as follows:
under the normal temperature condition, the gas sensitive material layer 140 has stable characteristics; when the heating layer 120 operates, the gas sensing material layer 140 is heated, thereby generating activity, and oxygen ions expressed as metal oxides bind electrons in the electrode layer 130, making it difficult for the electrons to flow; when the gas to be measured (i.e., the reducing gas) exists in the air, the oxygen ions of the metal oxide are combined with the gas to be measured, so that electrons in the electrode layer 130 are freely recovered, which means that the flow of the electrons is smooth, and the resistance value of the electrode layer 130 is changed. By measuring the resistance of the electrode layer 130, the concentration of the gas to be detected in the air can be calculated, and the effect of detecting the concentration of the gas to be detected can be achieved.
Further, the heating resistor on the heating layer 120 is a metal platinum etched on the silicon substrate 110 layer. The gas sensitive material layer 140 is deposited by physical vapor deposition techniques on the substrate 110 etched with the heater layer 120 and the electrode layer 130. The physical vapor deposition technology can accurately control the coating thickness of the gas sensitive material layer 140, and has good consistency and more stable performance. Specifically, the gas sensing material layer 140 uses a gas sensing material including one or more of tin oxide, tungsten oxide, cerium oxide, titanium oxide, zinc oxide, and indium oxide, and preferably a tin oxide material.
Example 2
As shown in fig. 3 and 4, the present embodiment discloses a gas detection device, which includes a housing 200, a gas through hole is formed on the housing 200, a PCB 300 and the semiconductor type gas sensor of embodiment 1 are disposed in the housing 200, specifically, the semiconductor type gas sensor is disposed on the PCB 300, and the connection ends of the heating layer 120 and the electrode layer 130 are respectively connected to the PCB 300 through pins to realize signal transmission. Specifically, the PCB 300 is used to convert an electrical signal of the semiconductor gas sensor into a digital signal for output, so that a worker can more quickly obtain a concentration condition of the gas to be measured.
Further, the PCB 300 is further provided with a calibration module for correcting different gas sensors and adjusting the difference of the change of the electrical signal under the same concentration, so that the obtained concentration value data of the gas to be measured is more accurate.
Specifically, be provided with filter equipment 400 on the gas through-hole of the gaseous detection device of this embodiment to be used for filtering other gas except that waiting to detect, specifically, this filter equipment 400 can be active carbon filter equipment 400 for be used for adsorbing macromolecular gases such as most organic gas, only allow the gas that awaits measuring to pass through. In particular, the gas detection device may be used for the detection of carbon monoxide gas or hydrogen sulfide gas.
Example 3
This embodiment is different from embodiment 2 in that, instead of providing the activated carbon filter device 400 on the gas passing holes, a hydrogen permeable membrane is provided on the substrate 110 on which the gas sensitive material layer 140 is provided, for the detection of hydrogen gas. Specifically, the hydrogen permeable membrane is closely attached above the gas sensitive material layer 140. Among them, hydrogen atoms are atoms with the smallest molecular weight, which can penetrate most thin films and thick films with a certain thickness, and these thin films and thick films can block most gases except hydrogen. By utilizing the principle, a hydrogen permeable membrane can be added at the gas through hole to realize the detection of the hydrogen.
Further, the hydrogen permeable membrane of the embodiment is deposited on the gas sensitive material layer 140 by a physical vapor deposition technique, so that the volume is smaller, the volume of the original gas detection device is not affected, the adhesion degree of the hydrogen permeable membrane on the gas detection device is higher, and the performance is more stable.
Further, the material of the hydrogen permeable membrane is alumina, silicon oxide or silicon nitride, preferably, the hydrogen permeable membrane is silicon dioxide, and the thickness is 500-800nm.
Example 4
The difference between this embodiment and embodiment 2 is that, in this embodiment, the activated carbon filter 400 is not disposed on the gas through hole, but a waterproof and gas permeable membrane is disposed at the gas through hole. The main function of the waterproof and breathable film is to prevent water and ventilate, so as to allow most of the air in the air to pass through. Therefore, the gas detection device can be used for detecting whether there is a toxic and harmful gas leak in the air, for example, the gas detection device can be used for detection of a VOC gas, a chemical leak, or the like.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not intended to limit the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention claims should be included in the protection scope of the present invention claims.
Claims (14)
1. A semiconductor type gas sensor comprises a substrate, wherein a heating layer, an electrode layer and a gas sensitive material layer are sequentially arranged on the substrate; the heating layer is provided with two connecting ends, and the two connecting ends of the heating layer and the connecting end of the electrode are mutually independent; gas sensitive material layer coat in on zone of heating and the electrode layer, two links of zone of heating with two links of electrode layer expose respectively outside gas sensitive material layer, just between two electrodes on the electrode layer, through gas sensitive material layer connects, realizes the electric property intercommunication.
2. The semiconductor gas sensor according to claim 1, wherein the electrode layer and the heating layer are alternately disposed on the substrate, and two electrodes of the electrode layer are alternately disposed.
3. The semiconductor type gas sensor according to claim 1, wherein the two electrodes of the electrode layer and the heating layer are designed to have rectangular electric wave-like structures, and the rectangular electric wave-like structures of the electrode layer and the rectangular electric wave-like structures of the heating layer are orthogonally distributed.
4. The semiconductor type gas sensor according to claim 1, wherein a temperature adjusting resistor is further provided on the substrate, and the temperature adjusting resistor is provided in parallel with the heating layer.
5. The semiconductor type gas sensor according to claim 1, wherein the substrate is a silicon-based material, the heating layer is a heating resistor, the electrode layer is an interdigital electrode, and the heating resistor and the interdigital resistor are respectively etched on an upper surface of the substrate.
6. The semiconductor type gas sensor according to claim 1, wherein the gas sensitive material of the gas sensitive material layer comprises one or more of tin oxide, tungsten oxide, cerium oxide, titanium oxide, zinc oxide and indium oxide; and the gas-sensitive material is deposited on the upper surface of the electrode layer by an EBM technology.
7. The semiconductor type gas sensor according to claim 1, wherein the substrate is a silicon substrate, and silicon oxide or silicon nitride is pre-deposited on the substrate and below the heating layer as a supporting layer by a PECVD technique.
8. A semiconductor type gas sensor according to claim 1, wherein the heating layer and/or the electrode layer is formed by depositing a metal electrode by PVD technique; the metal electrode is metal Pt, mo or Ni atoms.
9. A semiconductor type gas sensor according to claim 1, wherein the electrode layer is formed by an electrode plate having a capacitive structure.
10. A semiconductor gas sensor according to claim 1, wherein silicon oxide or silicon nitride is deposited as an insulating layer between the heating layer and the electrode layer by PECVD technique for insulating and isolating the heating layer and the electrode layer.
11. A gas detection device, characterized in that, including the casing, be provided with on the casing and be used for allowing the gaseous gas through hole that external gas got into, be provided with PCB circuit board and the semiconductor type gas sensor of any of claims 1-7 in the casing, the semiconductor type gas sensor sets up on PCB circuit board, and the link of heating layer and electrode layer is connected to PCB circuit board respectively, PCB circuit board is used for converting the electrical signal of semiconductor type gas sensor into digital signal output.
12. A gas detection device according to claim 11, wherein said gas vent is provided with an activated carbon filter or a hydrogen permeable membrane or a waterproof gas permeable membrane.
13. A gas detection device as claimed in claim 11 wherein the gas sensitive material layer is coated with a hydrogen permeable or water and gas permeable membrane.
14. The gas detection device of claim 11, wherein the PCB is provided with a calibration module, and the calibration module is configured to correct the difference of the electrical signal changes of different gas sensors at the same concentration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211203220.5A CN115575461A (en) | 2022-09-29 | 2022-09-29 | Semiconductor type gas sensor and gas detection device with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211203220.5A CN115575461A (en) | 2022-09-29 | 2022-09-29 | Semiconductor type gas sensor and gas detection device with same |
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