CN115561295A - Silicon nanowire field effect glucose sensor and preparation method thereof - Google Patents

Silicon nanowire field effect glucose sensor and preparation method thereof Download PDF

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CN115561295A
CN115561295A CN202211555174.5A CN202211555174A CN115561295A CN 115561295 A CN115561295 A CN 115561295A CN 202211555174 A CN202211555174 A CN 202211555174A CN 115561295 A CN115561295 A CN 115561295A
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silicon nanowire
glucose
field effect
solution
sensor
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CN115561295B (en
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魏千惠
魏峰
李港荣
朱艳
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Youyan Guangdong New Material Technology Research Institute
GRIMN Engineering Technology Research Institute Co Ltd
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Youyan Guangdong New Material Technology Research Institute
GRIMN Engineering Technology Research Institute Co Ltd
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Abstract

The invention belongs to the technical field of glucose biosensors, and discloses a silicon nanowire field effect glucose sensor and a preparation method thereof. The glucose sensor adopts a silicon nanowire field effect sensor compatible with a CMOS (complementary metal oxide semiconductor) process, a self-assembled catalyst layer is functionally mixed on the surface of a silicon nanowire, the silicon nanowire field effect sensor is modified by a mixed solution of 3-aminopropyltrimethoxysilane and polyethylene glycol to form an amino end cap, then glucose oxidase is fixed on the surface of the silicon nanowire, the modification density of probe molecular glucose oxidase is regulated, the dielectric property of a high-ionic strength solution is obviously changed, the Debye length is increased, glucose is subjected to enzymatic reaction, effective charges are detected, and the sensitivity of the sensor is improved. The glucose sensor has the advantages of easy miniaturization, label-free, commercialization, large-scale application, large-scale production and the like.

Description

Silicon nanowire field effect glucose sensor and preparation method thereof
Technical Field
The invention belongs to the technical field of glucose biosensors, and particularly relates to a silicon nanowire field effect glucose sensor and a preparation method thereof.
Background
In recent decades, field effect biosensors compatible with Complementary Metal Oxide Semiconductor (CMOS) have attracted much attention from researchers because of their characteristics of sensitivity, selectivity, rapidity, economy, simplicity, etc., and one-dimensional nanomaterials (e.g., carbon nanotubes, silicon nanowires, etc.) have been widely used as conductive channels for detecting various disease biomarkers, such as viruses, proteins, DNA, antigens, small molecules, etc., by monitoring current changes in field effect biosensor-based manufacturing. Silicon nanowire field effect (SiNW-FET) biosensors have proven to be an ultra-sensitive detection platform that can provide real-time, fast and label-free detection of biological samples, with commercial and large-scale applications due to the development of the semiconductor industry, compared to other types of nanostructure biosensors based on SiNW-FET biosensors.
However, siNW-FETs are limited to detecting analytes with a certain charge, while detecting weakly charged or uncharged analytes such as glucose remains a challenge. On the other hand, when the SiNW-FET biosensor works under the condition of high ionic strength, the SiNW-FET biosensor is influenced by the Debye shielding effect, so that the biosensor is greatly limited in aspects of sensitivity and the like, and therefore, the optimization of the modification process is the key for remarkably improving the performance of the SiNW-FET glucose sensor.
Therefore, the development of the SiNW-FET glucose sensor which is rapid, high in specificity, high in sensitivity and low in manufacturing cost and can directly detect glucose in physiological solution has important significance.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a silicon nanowire field effect glucose sensor and a preparation method thereof, which can detect glucose molecules in a high ionic strength solution in real time with high specificity and high sensitivity, and the biosensor has the advantages of portability, no label, commercialization, large-scale application, large-scale production and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
a silicon nanowire field effect glucose sensor adopts a silicon nanowire field effect (SiNW-FET) sensor compatible with a CMOS process, a mixed self-assembly catalyst layer is modified on the surface of a silicon nanowire, polyethylene glycol (PEG) and Glucose Oxidase (GOD) in the catalyst layer are modified at intervals, and when a target glucose molecule exists, an enzymatic reaction occurs so as to detect charges.
Preferably, the mixed self-assembly catalyst layer is formed by modifying a SiNW-FET sensor with a mixed solution of 3-Aminopropyltrimethoxysilane (APTMS) and PEG to form an amine group end cap, glucose Oxidase (GOD) is fixed on the surface of a silicon nanowire through an amide bond by a Glutaraldehyde (GA) cross-linking agent, and an enzymatic reaction is triggered when a target glucose molecule exists.
The PEG mixed in the self-assembly catalyst layer can obviously change the dielectric property of a high-ionic strength solution to increase the Debye length on one hand, and can be used as a spacer molecule to regulate the modification density of a probe molecule glucose oxidase on the other hand, so that an enzymatic reaction is carried out when a glucose molecule exists, thereby detecting effective charges, and further improving the sensitivity of the sensor.
Another objective of the present invention is to provide a preparation method of the silicon nanowire field effect glucose sensor, comprising the following steps:
s1, pretreating the surface of a silicon nanowire to hydroxylate the surface of the silicon nanowire;
s2, soaking the silicon nanowire with the surface blocked by the hydroxyl group obtained in the step S1 in a mixed ethanol solution containing APTMS and PEG for incubation, then washing the silicon nanowire with ethanol, drying the silicon nanowire in an oven to enable the surface of the SiNW-FET to form an amino blocking end, then incubating the silicon nanowire in a glutaraldehyde solution, and washing the silicon nanowire with a PBS solution to enable the surface of the SiNW-FET to form an amino blocking end;
s3, incubating the sensor obtained in the step S2 with a GOD solution overnight, cleaning and drying;
and S4, incubating the sensor obtained in the step S3 with Bovine Serum Albumin (BSA) solution for blocking.
Preferably, the pretreatment of step S1 includes cleaning the surface of the silicon nanowire with acetone or absolute ethanol to remove impurities, and then cleaning the surface of the silicon nanowire with oxygen plasma to hydroxylate the surface thereof.
Preferably, the concentration ratio of 3-Aminopropyltrimethoxysilane (APTMS) to PEG in step S2 is 10.
More preferably, the APTMS concentration in the step S2 is 0.01 mmol/L-1 mmol/L, the PEG solution concentration is 0.01 mmol/L-3 mmol/L, and the molecular weight of the polyethylene glycol is 1KDa-30KDa.
Preferably, the concentration of the glutaraldehyde solution in step S2 is 0.5% -10%.
Preferably, the concentration of the GOD solution in the step S3 is 0.1 mu g/mL-10 mg/mL.
Preferably, the concentration of the bovine serum albumin solution in the step S4 is 0.01-20 mg/mL.
More specifically, in the present invention, the preparation process of the silicon nanowire field effect transistor sensor can refer to patent CN 113960128a, which comprises the following steps:
(1) Preparing a substrate: deposition of 145nm SiO on 200mm Si wafers 2 And 40 nm;
(2) Sequentially depositing SiO on the SOI silicon wafer by chemical vapor deposition 2 Forming a rectangular pattern by gluing, pre-baking, ultraviolet exposure, post-baking, developing and developing an amorphous silicon (alpha-Si)/SiNx film, and etching the SiNx and alpha-Si by using a dry etching process to form a side wall approaching 90-degree steepness;
(3) With heat H at 140 ℃ 3 PO 4 Removing the top SiNx Hard Mask (HMs) with solution, depositing a SiNx film by plasma enhanced chemical vapor deposition, and performing silicon nitride Reactive Ion Etching (RIE) to form two rectangular alpha-Si layers on two sidesBack-to-back wedge Si 3 N 4 Side wall, removing alpha-Si with tetramethyl ammonium hydroxide on SiO 2 Leaving nano-scale Si on top of the film 3 N 4 The array of the side walls HMs, then the SiO at the bottom is etched by using the nano-scale side walls as a mask 2 And a layer of single crystal Si with heat H 3 PO 4 Removing the SiNx mask and HMs at the top by using a diluted hydrofluoric acid solution to obtain a silicon nanowire array with good uniformity and consistency;
(4) Forming metal silicide in the source region and the drain region by using nickel-platinum alloy to reduce parasitic resistance of the silicon nanowire, and then implanting high-dose low-energy BF 2+ Ions, which are then activated by low temperature annealing to form schottky barrier source and drain electrodes;
(5) For better bonding, an aluminum electrode is prepared by a sputtering process and subjected to an RIE process, followed by deposition of a thick layer of SiO 2 Opening a source drain contact hole by utilizing photoetching and etching processes;
(6) Finally, defining grids with different channel lengths by photoetching technology, realizing an open grid channel of the sensor by RIE (reactive ion etching) process to expose a sensitive area, and depositing a layer of HfO on the surface of the device to meet the liquid detection environment 2 。
When the glucose sensor prepared by the invention is used, the sensor is placed in a high ionic strength solution, and when a target glucose molecule is detected, glucose is converted into gluconolactone and hydrogen peroxide (H) under the catalysis of GOD 2 O 2 ) Then H 2 O 2 Further dissociated, and hydrogen ions (H) are generated at the gate voltage + ) And electron (e) - ) Enzymatic reaction generated H due to the GA attachment bringing GOD closer to the SiNW-FET surface + Gradually increases and accumulates on the interface of the SiNW channel layer and the solution, so that the local pH is reduced, the channel layer is induced, and the SiNW-FET is represented as a p-type semiconductor under the gate voltage (-3V). Thus, at H + The amount of carriers (holes) in the channel layer of the SiNW-FET is reduced, resulting in a decrease in conductance, and the current value of the SiNW-FET increases as glucose increases from a low concentration to a high concentrationA change occurs.
Compared with the prior art, the invention has the beneficial effects that:
1. the glucose sensor can detect glucose molecules in a high ionic strength solution in real time with high specificity and high sensitivity by modifying the mixed self-assembled catalyst layer on the surface of the SiNW-FET.
2. By monitoring the change of the threshold voltage, the glucose concentration is reflected, and the direct detection of glucose molecules in the high ionic strength solution is realized.
3. The sensitivity of the SiNW-FET biosensor modified by the mixed self-assembled catalyst layer is tested by glucose liquid with different concentrations, the SiNW-FET has quick response to glucose detection, the detection limit is less than 8 nM, and glucose can be detected in a complex background with high sensitivity.
Drawings
FIG. 1 is a schematic diagram of a mixed self-assembly modified silicon nanowire field effect glucose sensor for detecting glucose according to the present invention.
FIG. 2 is a graph showing the variation of threshold voltage with glucose solution when glucose solutions of different concentrations are respectively added to the glucose sensor prepared in examples 1 to 3 of the present invention.
FIG. 3 is a graph showing the variation of threshold voltage with glucose solution when glucose solutions of different concentrations are added to the glucose sensor prepared in example 1 and comparative example 1.
FIG. 4 is a graph showing the current change with time when glucose solutions of different concentrations were added dropwise to the glucose sensor prepared in example 1 of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The test methods used in the examples of the present invention are all conventional methods unless otherwise specified; the materials, reagents and the like used are, unless otherwise specified, commercially available reagents and materials.
As shown in FIG. 1, the glucose sensor of the present invention adopts a CMOS compatible "top-down" method to prepare a silicon nanowire field effect sensor, and then a mixed self-assembled catalyst layer is modified on the surface of the silicon nanowire. The method specifically comprises the following steps: respectively depositing 145nm of SiO on 200mm silicon wafers 2 And 40nm of polysilicon; then, forming a SiNW pattern by using a self-aligned side wall technology, and etching the SiNW array; then preparing an electrode of the SiNW biosensor, and depositing to form an insulating medium isolation layer by adopting an atomic layer deposition process; cleaning the SiNW surface by using oxygen plasma to hydroxylate the SiNW surface; then soaking the SiNW with the surface filled with hydroxyl in an ethanol solution containing APTMS and silane-PEG to form an amino terminal; then incubated with Glutaraldehyde (GA) solution at room temperature. Finally, incubation with GOD solution, washing with a small amount of PBS solution, drying at room temperature, and incubation of the resulting device in BSA solution for blocking to prevent non-specific adsorption.
In a specific embodiment of the invention, a process for preparing a silicon nanowire field effect glucose sensor comprises the steps of preparing a silicon nanowire field effect tube sensor and modifying a SiNW-FET glucose sensor by a mixed self-assembled catalyst layer.
The preparation of the silicon nanowire field effect transistor sensor (SiNW-FET) can refer to the preparation process of the biosensor in patent CN 113960128A, and comprises the following steps:
(1) Preparing a substrate: respectively depositing 145nm of SiO on 200mm silicon wafers 2 And 40nm of polysilicon;
(2) Sequentially depositing SiO on the SOI silicon wafer by chemical vapor deposition 2 Forming a rectangular pattern by gluing, pre-baking, ultraviolet exposure, post-baking, developing and the like on the amorphous silicon (alpha-Si)/SiNx film, and etching the SiNx and alpha-Si by using a dry etching process to form a side wall approaching 90-degree steepness;
(3) With heat H at 140 ℃ 3 PO 4 Solution removal of the top SiNx Hardmask (HMs)) And depositing a SiNx film by using plasma enhanced chemical vapor deposition. Then, corresponding silicon nitride Reactive Ion Etching (RIE) is carried out, and two back-to-back wedge-shaped Si are formed on two sides of the rectangular alpha-Si 3 N 4 Side wall, removing alpha-Si with tetramethyl ammonium hydroxide (TMAH) on SiO 2 Leaving nano-scale Si on top of the film 3 N 4 And a side wall hard mask array. Etching SiO at the bottom by using the nano-scale side wall as a mask 2 And a layer of single crystal Si with heat H 3 PO 4 Removing the SiNx mask and HMs at the top by using a diluted hydrofluoric acid solution to obtain a silicon nanowire array with good uniformity and consistency;
(4) Using nickel-platinum alloy to form metal silicide in source region and drain region to reduce parasitic resistance of silicon nanowire, and then implanting large dose of low energy BF 2+ Ions, which are then activated by low temperature annealing to form schottky barrier source and drain electrodes;
(5) For better bonding, an aluminum electrode is prepared by a sputtering process and an RIE process is performed. Then a layer of SiO 1-5 μm thick is deposited 2 Opening a source drain contact hole by utilizing photoetching and etching processes;
(6) Finally, defining grids with different channel lengths by photoetching technology, realizing an open grid channel of the sensor by RIE (reactive ion etching) process to expose a sensitive area, and depositing a layer of HfO on the surface of the device to meet the liquid detection environment 2 And obtaining the SiNW-FET.
Example 1
A silicon nanowire field effect glucose sensor is prepared by the following steps:
(1) Cleaning the surface of the SiNW-FET by using acetone and absolute ethyl alcohol to remove impurities, and then cleaning the surface of the silicon nanowire by using an oxygen plasma degumming machine to hydroxylate the surface of the silicon nanowire;
(2) Soaking the silicon nanowire with the surface blocked by hydroxyl in 3-Aminopropyltrimethoxysilane (APTMS) (0.4 mmol/L) with the concentration ratio of 2:1: incubation of polyethylene glycol (PEG) (0.2 mmol/L, M =10 KDa) in mixed ethanol solution for 20 min with shaking, then rinsing the device with absolute ethanol to remove residues and treatment in oven 100 ℃ for 15 min to ensure amine group capping on the SiNW-FET surface;
(3) Then incubating with 1% Glutaraldehyde (GA) solution for 30 minutes at room temperature, and washing with PBS solution for several times to remove residual GA, so as to ensure that an amine-aldehyde-based end cap is formed on the surface of the SiNW-FET;
(4) Preparing a 0.5 mg/mL Glucose Oxidase (GOD) solution with 1 XPBS solution, incubating overnight at 4 ℃, after incubation, washing FETs several times with a small amount of PBS solution to remove residual GOD, and drying at room temperature for 20 minutes;
(5) To prevent non-specific adsorption, the devices obtained above were capped by incubating the BSA solution prepared in 0.5 mg/mL with 1 × PBS solution at 4 ℃ for 1 hour, and after incubation, the FETs were rinsed several times with a small amount of PBS solution.
Example 2
A silicon nanowire field effect glucose sensor is prepared by the following steps:
(1) Cleaning the surface of the SiNW-FET by using acetone and absolute ethyl alcohol to remove impurities, and then cleaning the surface of the silicon nanowire by using an oxygen plasma degumming machine to hydroxylate the surface of the silicon nanowire;
(2) Soaking the silicon nanowire with the surface blocked by hydroxyl in APTMS (0.2 mmol/L) with the concentration ratio of 1:2: incubation of PEG (0.4 mmol/L, M =10 KDa) in mixed ethanol solution for 20 min with shaking, then rinsing the device with absolute ethanol to remove residues and treatment in oven 100 ℃ for 15 min to ensure amine group capping on the SiNW-FET surface;
(3) Then incubating with 1% Glutaraldehyde (GA) solution for 30 minutes at room temperature, and washing with PBS solution for several times to remove residual GA, so as to ensure that an amine-aldehyde-based end cap is formed on the surface of the SiNW-FET;
(4) Preparing 0.5 mg/mL GOD solution with 1 XPBS solution, incubating overnight at 4 ℃, washing FETs with a small amount of PBS solution for several times after incubation to remove residual GOD, and drying at room temperature for 20 minutes;
(5) To prevent non-specific adsorption, the devices obtained above were capped by incubating with 0.5 mg/mL BSA solution prepared in 1 × PBS solution at 4 ℃ for 1 hour, and after incubation, the FETs were washed several times with a small amount of PBS solution.
Example 3
A silicon nanowire field effect glucose sensor is prepared by the following steps:
(1) Cleaning the surface of the SiNW-FET by using acetone and absolute ethyl alcohol to remove impurities, and then cleaning the surface of the silicon nanowire by using an oxygen plasma degumming machine to hydroxylate the surface of the silicon nanowire;
(2) Soaking the silicon nanowire with the surface blocked by hydroxyl in APTMS (0.2 mmol/L) with the concentration ratio of 1:1: incubation of PEG (0.2 mmol/L, M =10 KDa) in mixed ethanol solution for 20 min with shaking, then rinsing the device with absolute ethanol to remove residues and treatment in oven 100 ℃ for 15 min to ensure amine group capping on the SiNW-FET surface;
(3) Then incubating with 1% Glutaraldehyde (GA) solution for 30 minutes at room temperature, and washing with PBS solution for several times to remove residual GA, so as to ensure that an amine-aldehyde-based end cap is formed on the surface of the SiNW-FET;
(4) Preparing 0.5 mg/mL GOD solution with 1 XPBS solution, incubating overnight at 4 ℃, washing FETs with a small amount of PBS solution for several times after incubation to remove residual GOD, and drying at room temperature for 20 minutes;
(5) To prevent non-specific adsorption, the devices obtained above were capped by incubating the BSA solution prepared in 0.5 mg/mL with 1 × PBS solution at 4 ℃ for 1 hour, and after incubation, the FETs were rinsed several times with a small amount of PBS solution.
Comparative example 1
The preparation of the SiNW-FET glucose sensor based on the independent modification of glucose oxidase comprises the following steps:
(1) Cleaning the surface of the SiNW-FET by using acetone and absolute ethyl alcohol to remove impurities, and then cleaning the surface of the silicon nanowire by using an oxygen plasma degumming machine to hydroxylate the surface of the silicon nanowire;
(2) Soaking the silicon nanowire with the surface blocked by the hydroxyl group in APTMS (0.4 mmol/L) ethanol solution, shaking and incubating for 20 minutes, then washing the device by absolute ethyl alcohol to remove residues, and treating for 15 minutes at 100 ℃ of an oven to ensure that an amino group blocking is formed on the surface of the SiNW-FET;
(3) Then incubating with 1% Glutaraldehyde (GA) solution for 30 minutes at room temperature, and washing with PBS solution for several times to remove residual GA, so as to ensure that an amine-aldehyde-based end cap is formed on the surface of the SiNW-FET;
(4) Preparing a 0.5 mg/mL GOD solution with 1 XPBS solution, incubating overnight at 4 ℃, washing FETs with a small amount of PBS solution for several times after incubation to remove residual GOD, and drying at room temperature for 20 minutes;
(5) To prevent non-specific adsorption, the devices obtained above were capped by incubating with 0.5 mg/mL BSA solution prepared in 1 × PBS solution at 4 ℃ for 1 hour, and after incubation, the FETs were washed several times with a small amount of PBS solution.
Examples of the experiments
1. When the SiNW-FET biosensors prepared in examples 1 to 3 and modified by the mixed self-assembled catalyst layer shown in FIG. 1 were used, glucose solutions with different concentrations were respectively added dropwise, and the change of the threshold voltage was monitored as the glucose solution changed.
As shown in fig. 2 and 3: the comparison curve shows that the SiNW-FET glucose sensors modified by three different APTMS and PEG ratios can identify glucose in the range of 100 nM-10 mM and are in linear response to a certain extent. Comparing the threshold voltage change curves of the sensors of example 1 and comparative example 1, the response of the PEG-modified glucose sensor was much greater than that of the sensor modified with glucose oxidase alone.
2. Glucose solutions were prepared at concentrations of 8 nM, 10 nM, 50 nM, 100 nM, 1 μ M, 10 μ M, 100 μ M, 1 mM and 10 mM using 1 XPBS solution, 1 μ L of each glucose solution was dropped on the sensor-sensitive grid slot site, and detection electrical signals were recorded using a Keithley 4200 semiconductor analyzer.
The obtained electric signals are shown in FIG. 4, which are time response curves of glucose concentration 8 nM to 10 mM from bottom to top, and the absolute value of the source-drain current is gradually reduced along with the increase of the glucose concentration, which is caused by H generated by enzymatic reaction + The quantity of current carriers of a conduction channel of the induced p-type SiNW-FET biosensor is reduced, so that the magnitude of source-drain current is influenced.
The measurement result shows that when the time of adding the glucose solution to the surface of the SiNW-FET is less than 8 s, the generated current signal can tend to be stable, and the SiNW-FET has quick response to glucose detection. The glucose solution of 8 nM has a response signal, and the detection limit is less than 8 nM and is far less than the blood glucose concentration of a human body. Background solution 1 x PBS and serum have the same ionic strength as whole blood solution, the sensor provided by the present application can detect glucose with high sensitivity in a complex background.
It should be understood that the above-described embodiments are merely exemplary of the present invention and are not intended to limit the present invention, and that any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A silicon nanowire field effect glucose sensor is characterized in that the glucose sensor adopts a silicon nanowire field effect tube sensor compatible with CMOS, a mixed self-assembly catalyst layer is modified on the surface of a silicon nanowire, polyethylene glycol and glucose oxidase are used for alternate modification in the mixed self-assembly catalyst layer, and when target glucose molecules exist, enzymatic reaction occurs so as to detect charges.
2. The silicon nanowire field effect glucose sensor of claim 1, wherein the mixed self-assembled catalytic layer is a mixed solution of 3-aminopropyltrimethoxysilane and polyethylene glycol to modify the surface of the silicon nanowire to form an amine-based end cap, and glutaraldehyde is used to fix glucose oxidase on the surface of the silicon nanowire to form an amine-aldehyde-based end cap.
3. The method for preparing a silicon nanowire field effect glucose sensor as claimed in claim 2, comprising the steps of:
s1, pretreating the surface of a silicon nanowire to hydroxylate the surface of the silicon nanowire;
s2, soaking the silicon nanowire with the surface blocked by the hydroxyl group obtained in the step S1 in a mixed ethanol solution containing 3-aminopropyl trimethoxy silane and polyethylene glycol for incubation, cleaning and drying to form an amino group blocking end on the surface of the silicon nanowire, and then incubating in a glutaraldehyde solution to form an amino aldehyde group blocking end on the surface of the silicon nanowire;
s3, incubating the sensor obtained in the step S2 with a glucose oxidase solution overnight, cleaning and then drying;
and S4, incubating the sensor obtained in the step S3 with a bovine serum albumin solution for end sealing.
4. The method for preparing the silicon nanowire field effect glucose sensor as claimed in claim 3, wherein the pretreatment of step S1 comprises cleaning the surface of the silicon nanowire with acetone and absolute ethyl alcohol to remove impurities, and then cleaning the surface of the silicon nanowire with oxygen plasma to hydroxylate the surface.
5. The method for preparing a silicon nanowire field effect glucose sensor as claimed in claim 3, wherein the ratio of 3-aminopropyltrimethoxysilane to polyethylene glycol in step S2 is 10.
6. The method of claim 5, wherein the concentration of the 3-aminopropyltrimethoxysilane solution is 0.01 mmol/L to 1 mmol/L, the concentration of the polyethylene glycol solution is 0.01 mmol/L to 3 mmol/L, and the molecular weight of the polyethylene glycol is 1KDa to 30KDa.
7. The method for preparing the silicon nanowire field effect glucose sensor as claimed in claim 3, wherein the concentration of the glutaraldehyde solution in step S2 is 0.5% -10%.
8. The method for preparing the silicon nanowire field effect glucose sensor as claimed in claim 3, wherein the concentration of the glucose oxidase solution in the step S3 is 0.1 μ g/mL-10 mg/mL.
9. The method for preparing a silicon nanowire field effect glucose sensor as claimed in claim 3, wherein the concentration of the bovine serum albumin solution in step S4 is 0.01-20 mg/mL.
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