CN115548219A - Perovskite thin film layer passivation method and prepared perovskite solar cell - Google Patents
Perovskite thin film layer passivation method and prepared perovskite solar cell Download PDFInfo
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Abstract
The invention provides a perovskite thin film layer passivation method and a prepared perovskite solar cell, wherein the passivation method comprises the following steps: (1) Coating the first solution on the perovskite thin film layer, and annealing to obtain a 2-dimensional perovskite passivation layer; (2) Coating a second solution on the 2-dimensional perovskite passivation layer obtained in the step (1), and annealing to obtain a second passivation layer; the first solution comprises any one or the combination of at least two of phenethyl ammonium iodide solution, o-fluorophenylethylamine iodide solution, n-butylamine iodine solution or butanediamine iodine solution; the second solution includes an octyl amine iodide solution and/or a heptyl amine iodide solution. According to the invention, the first solution and the second solution cooperate to improve the hydrophobicity of the surface of the perovskite thin film and fill iodine vacancies in perovskite, so that the effects of passivating the perovskite thin film and improving the efficiency of the perovskite solar cell are achieved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and relates to a perovskite thin film layer passivation method and a prepared perovskite solar cell.
Background
Solar energy is clean energy and is inexhaustible. Solar energy is one of the most promising approaches to solve human energy problems, and photovoltaic cells are an effective way to convert solar energy directly into electrical energy. At present, crystalline silicon solar cells are widely applied in the market, but the manufacturing process is complex, high-temperature treatment is needed, the cost is high, and the large-scale application of the crystalline silicon solar cells is limited. Therefore, people are looking for new photovoltaic cells, and new photovoltaic devices such as dye (quantum dot) sensitized solar cells, cuInGaSe thin film solar cells, organic solar cells and the like are produced at the same time. However, the optimal photoelectric conversion efficiency of the above-mentioned cell is usually only half of that of the commercial silicon cell, and the efficiency improvement is too difficult. In recent years, the photoelectric conversion efficiency of Perovskite Solar Cells (PSCs) has been rapidly increased from 3.8% in 2009 to 25.5% in 2021. The silicon-based solar cell is a photovoltaic technology which is hopeful to replace a silicon-based solar cell due to the advantages of simple preparation process, low cost, high photovoltaic performance and the like.
Perovskite solar cells generally consist of FTO conductive glass, an electron transport layer ETL, a perovskite light absorption layer, a hole transport layer HTM, and metal electrodes. However, in the photovoltaic field, three major factors for determining whether a solar cell can be commercialized are efficiency, stability and cost. For PSCs, the perovskite thin film has many defects including the defects inside the perovskite crystal, at the grain boundary and on the surface due to the low-cost solution preparation process, and further improvement of the battery efficiency and stability needs to be solved. Defects of the perovskite thin film directly cause deterioration of perovskite crystallization quality and energy level matching among layers, thereby increasing probability of capturing and compounding of current carriers by the defects, reducing charge transmission efficiency, accelerating decomposition of the perovskite, and causing reduction of battery efficiency and stability.
In particular, since the preparation process of PSCs involves operations such as low-temperature solution processes and thermal annealing, perovskite thin films tend to generate a large number of defects and interface states. These defects seriously affect the photoelectric properties and operational stability of PSCs. In particular, various defects on the surface of the perovskite are mostly deep-level defect states, which can cause the following adverse effects on the device: (1) The defect state can capture free charges, so that photogenerated carriers are compounded, and the loss of the open-circuit voltage and the filling factor of the battery is caused; (2) The charges accumulated on the surface not only can cause undesirable bending of an interface energy band and influence the transmission of carriers, but also can cause the adverse phenomenon of current and voltage hysteresis of PSCs; (3) Irregular film surface topography can increase device leakage current and reduce cell short circuit current. Even defects in the bulk migrate to the surface of the perovskite under the influence of the electric field, exacerbating the above-mentioned detrimental phenomenon. In addition, the surface of the perovskite thin film is in contact with other functional layers (such as a hole transport layer and an electron transport layer) and the external environment, and a chemical reaction is easy to occur at a contact interface, so that the degradation of the perovskite thin film is accelerated, and the working stability of PSCs is seriously influenced.
Therefore, it is desirable in the art to develop a method for passivating a perovskite thin film layer to avoid the above-mentioned defects.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a method for passivating a perovskite thin film layer and a prepared perovskite solar cell. According to the invention, the perovskite film layer is subjected to composite passivation by adopting the first solution and the second solution, the first solution can form 2-dimensional perovskite with the surface and deeper layer of the perovskite film layer to improve the stability of the perovskite film layer and passivate deep level defects, and the second solution fills the perovskite surface vacancy and passivate shallow level defects by using a hydrophobic compound containing iodine ions on the basis of 2-dimensional perovskite, further passivates the defects, and further improves the long-term stability of the perovskite solar cell. The method can improve the hydrophobicity of the surface of the perovskite thin film, and can fill up iodine vacancies in the perovskite, so that the efficiency of the perovskite solar cell is further improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method of passivating a perovskite thin film layer, the method comprising the steps of:
(1) Coating the first solution on the perovskite thin film layer, and annealing to obtain a 2-dimensional perovskite passivation layer;
(2) Coating a second solution on the 2-dimensional perovskite passivation layer obtained in the step (1), and annealing to obtain a second passivation layer;
the first solution comprises any one or a combination of at least two of phenethyl ammonium iodide (PEAI) solution, o-fluorophenylethylamine iodide (oFPEAI) solution, n-butylamine iodine (BAI) solution or butanediamine iodine solution;
the second solution includes an Octyl Amine Iodide (OAI) solution and/or a heptyl amine iodide solution.
According to the invention, the perovskite film layer is subjected to composite passivation by adopting the first solution and the second solution, the first solution can form 2-dimensional perovskite with the surface and deeper layer of the perovskite film layer to improve the stability of the perovskite film layer and passivate deep level defects, and the second solution fills the perovskite surface vacancy and passivate shallow level defects by using a hydrophobic compound containing iodine ions on the basis of 2-dimensional perovskite, further passivates the defects, and further improves the long-term stability of the perovskite solar cell.
According to the invention, the first solution is spin-coated on the perovskite thin film layer to form the 2-dimensional perovskite passivation layer, the second solution is spin-coated to form the second passivation layer, and the first solution and the second solution have synergistic effect, so that the hydrophobicity of the surface of the perovskite thin film can be improved, and iodine vacancies in perovskite can be filled, thereby achieving the effects of passivating the perovskite thin film layer and improving the efficiency of the perovskite solar cell.
Preferably, the solvent in the first solution of step (1) comprises isopropanol or N, N-Dimethylformamide (DMF). Specifically, the solvent in the phenylethyl ammonium iodide solution and the o-fluorophenylethylamine iodide solution is isopropanol, and the solvent in the n-butylamine iodine solution and the butanediamine iodine solution is DMF.
Preferably, the coating manner in step (1) includes spin coating. The coating in the step (1) may be one or more of spraying, blade coating and other coating methods. Preferably, the concentration of the first solution of step (1) is 0.3-0.7mM, such as 0.3mM, 0.4mM, 0.5mM, 0.6mM, or 0.7mM, and the like. In the present invention, mM means millimole/liter.
Preferably, the spin coating amount of the first solution in the step (1) is 30-50 μ L (e.g., 30 μ L, 33 μ L, 35 μ L, 38 μ L, 40 μ L, 43 μ L, 45 μ L, 48 μ L, 50 μ L, etc.) of the first solution with a concentration of 0.3-0.7mM (e.g., 0.3mM, 0.4mM, 0.5mM, 0.6mM, 0.7mM, etc.) on the perovskite thin film layer with an area of 1 square centimeter.
Preferably, the coating manner in step (1) comprises static spin coating.
Preferably, the rotation speed of the static spin coating is 3000-5000rpm, such as 3000rpm, 3300rpm, 3500rpm, 3800rpm, 4000rpm, 4300rpm, 4500rpm, 4800rpm, 5000rpm, or the like, and the time of the static spin coating is 20-40s, such as 20s, 23s, 25s, 28s, 30s, 33s, 35s, 38s, 40s, or the like.
Preferably, the annealing time in step (1) is 3-8min, such as 3min, 4min, 5min, 6min, 7min or 8min.
Preferably, the solvent in the second solution of step (2) is isopropanol.
Preferably, the coating manner in step (2) includes spin coating. The coating in the step (2) may be one or more of spraying, blade coating and other coating methods.
Preferably, the concentration of the second solution of step (2) is 3-7mM, such as 3mM, 4mM, 5mM, 6mM, 7mM, or the like.
Preferably, the spin coating amount of the second solution in the step (2) is 30-50 μ L (e.g., 30 μ L, 33 μ L, 35 μ L, 38 μ L, 40 μ L, 43 μ L, 45 μ L, 48 μ L or 50 μ L, etc.) of the second solution with a concentration of 3-7mM (e.g., 3mM, 4mM, 5mM, 6mM or 7mM, etc.) on the 2-dimensional perovskite passivation layer with an area of 1 square centimeter.
Preferably, the coating manner of the step (2) comprises static spin coating.
Preferably, the rotation speed of the static spin coating is 3000-5000rpm, such as 3000rpm, 3300rpm, 3500rpm, 3800rpm, 4000rpm, 4300rpm, 4500rpm, 4800rpm or 5000rpm, etc., and the time of the static spin coating is 20-40s, such as 20s, 23s, 25s, 28s, 30s, 33s, 35s, 38s or 40s, etc.
Preferably, the annealing time in step (2) is 3-8min, such as 3min, 4min, 5min, 6min, 7min or 8min.
It should be noted that, the method for preparing the perovskite thin film layer in step (1) is not particularly limited, and the perovskite thin film layer can be prepared by a conventional preparation method in the prior art, and for example, the perovskite thin film layer can be prepared by the following preparation method:
dissolving iodoformamidine, lead iodide and chloromethane in a mixed solution of dimethyl sulfoxide and dimethylformamide, and stirring to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution to obtain a perovskite precursor layer; and dropwise adding an ether anti-solvent on the perovskite precursor layer, and annealing to obtain the perovskite thin film layer.
As a preferred embodiment of the present invention, the method for passivating a perovskite thin film layer includes the steps of:
(1) Dropwise adding the first solution on the perovskite thin film layer, statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a 2-dimensional perovskite passivation layer;
wherein the dropping amount of the first solution is that 30-50 mu L of the first solution with the concentration of 0.3-0.7mM is dropped on the perovskite thin film layer with the area of 1 square centimeter;
(2) Dropwise adding a second solution on the 2-dimensional perovskite passivation layer obtained in the step (1), statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a second passivation layer;
wherein the dropping amount of the second solution is that 30-50 mu L of the second solution with the concentration of 3-7mM is dropped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
In a second aspect, the invention provides a perovskite solar cell, which comprises a hole transport layer, a perovskite thin film layer and an electron transport layer, and further comprises a 2-dimensional perovskite passivation layer and a second passivation layer;
the 2-dimensional perovskite passivation layer and the second passivation layer are prepared by the passivation method of the first aspect.
Preferably, the 2-dimensional perovskite passivation layer and the second passivation layer are located between the perovskite thin film layer and the hole transport layer, the 2-dimensional perovskite passivation layer is adjacent to the perovskite thin film layer, and the second passivation layer is adjacent to the hole transport layer.
Preferably, the perovskite solar cell further comprises a mesoporous thin film layer.
It should be noted that the present invention does not specifically limit the method for preparing the other layers of the perovskite solar cell, and the perovskite solar cell is prepared by the following preparation method as an example:
(1) And (3) pretreating the FTO conductive glass by using a glass cleaning agent.
(2) Adding titanium diisopropoxybialcetylacetonate into anhydrous n-butanol, adding FK209Co (III) into the anhydrous n-butanol, dissolving to obtain a mixed solution, spin-coating the mixed solution on FTO conductive glass, and drying to form an electron transport layer.
(3) And (3) spin-coating a solution prepared from the titanium dioxide slurry and absolute ethyl alcohol on the formed electron transport layer, and annealing to form the mesoporous thin film layer.
(4) Dissolving iodoformamidine, lead iodide and chloromethylamine in a mixed solution of dimethyl sulfoxide (DMSO) and Dimethylformamide (DMF), fully stirring to obtain a perovskite precursor solution, spin-coating the perovskite precursor solution on the formed mesoporous thin film layer to obtain a perovskite precursor layer, and dropwise adding an ether anti-solvent on the perovskite precursor layer and carrying out annealing treatment to form the perovskite thin film layer.
(5) Dropwise adding the first solution on the perovskite thin film layer, statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a 2-dimensional perovskite passivation layer;
wherein the dropping amount of the first solution is that 30-50 mu L of the first solution with the concentration of 0.3-0.7mM is dropped on the perovskite thin film layer with the area of 1 square centimeter.
(6) Dropwise adding a second solution on the 2-dimensional perovskite passivation layer obtained in the step (5), statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a second passivation layer;
wherein the dripping amount of the second solution is that 30-50 mu L of the second solution with the concentration of 3-7mM is dripped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
(7) And spin-coating a hole transport layer Spiro-OMeTAD on the second passivation layer, and scratching out the FTO electrode by utilizing gamma-butyrolactone (GBL).
(8) And finally, depositing gold (Au) on the hole transport layer substrate by using a vacuum evaporation device to form a metal electrode, thereby obtaining the perovskite solar cell.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the first solution is spin-coated on the perovskite thin film layer to form the 2-dimensional perovskite passivation layer, then the second solution is spin-coated to form the second passivation layer, and the first solution and the second solution have synergistic effect, so that the hydrophobicity of the surface of the perovskite thin film can be improved, and iodine vacancies in perovskite can be filled, thereby achieving the effects of passivating the perovskite thin film layer and improving the efficiency (photoelectric conversion efficiency: 17.04% -22.12%) of the perovskite solar cell.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell provided in example 1;
the solar cell comprises 1-FTO conductive glass, 2-electron transport layer, 3-mesoporous thin film layer, 4-perovskite thin film layer, 5-2-dimensional perovskite passivation layer, 6-second passivation layer, 7-hole transport layer and 8-metal electrode.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
In this embodiment, a method for passivating a perovskite thin film layer and a perovskite solar cell are provided, wherein the method for passivating and the method for manufacturing the perovskite solar cell comprise the following steps:
(1) And (3) pretreating the FTO conductive glass by using a glass cleaning agent.
(2) Adding diisopropoxy bis acetylacetonato titanium into anhydrous n-butanol, adding FK209Co (III) (the molar ratio of FK209Co (III) to diisopropoxy bis acetylacetonato titanium is 1: 500)) to the anhydrous n-butanol, sufficiently shaking up to dissolve the mixture to obtain a mixed solution, spin-coating the mixed solution on FTO conductive glass, and drying the mixed solution to form an electron transport layer (with a thickness of 30 nm).
(3) And (3) spin-coating a solution prepared from titanium dioxide slurry and absolute ethyl alcohol in a mass ratio of 1.
(4) Dissolving iodoformamidine, lead iodide and chloromethylamine in a molar ratio of 4.
(5) Dropwise adding phenethyl ammonium iodide solution on the perovskite thin film layer, statically spin-coating for 30s on a spin coating instrument at the rotating speed of 4000rpm, and annealing for 5min to obtain a 2-dimensional perovskite passivation layer;
wherein, the dropping amount of the phenethyl ammonium iodide solution is that 40 microliter of phenethyl ammonium iodide solution with the concentration of 0.5mM is dropped on the perovskite thin film layer with the area of 1 square centimeter.
(6) Dropwise adding an octyl amine iodide solution on the 2-dimensional perovskite passivation layer obtained in the step (5), statically spin-coating for 30s on a spin coater at the rotating speed of 4000rpm, and annealing for 5min to obtain a second passivation layer;
wherein the dropping amount of the octyl amine iodide solution is that 40 mu L of octyl amine iodide solution with the concentration of 5mM is dropped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
(7) A hole transport layer, spiro-OMeTAD (thickness 100 nm), was spin-coated on the second passivation layer and the FTO electrode was scratched using GBL.
(8) And finally, depositing Au on the hole transport layer substrate by using a vacuum evaporation device to form a metal electrode, thereby obtaining the perovskite solar cell.
The structural schematic diagram of the perovskite solar cell provided in this embodiment is shown in fig. 1.
Example 2
The present embodiment differs from embodiment 1 only in that step (5) and step (6) differ from embodiment 1, and step (5) and step (6) specifically include the following steps:
(5) Dropwise adding phenethyl ammonium iodide solution on the perovskite thin film layer, statically spin-coating for 40s on a spin coater at the rotating speed of 3000rpm, and annealing for 3min to obtain a 2-dimensional perovskite passivation layer;
wherein, the dropping amount of the phenethyl ammonium iodide solution is that 30 microliter of phenethyl ammonium iodide solution with the concentration of 0.3mM is dropped on the perovskite thin film layer with the area of 1 square centimeter.
(6) Dropwise adding an octyl amine iodide solution on the 2-dimensional perovskite passivation layer obtained in the step (5), statically spin-coating for 40s on a spin coater at the rotating speed of 3000rpm, and annealing for 3min to obtain a second passivation layer;
wherein the dropping amount of the octyl amine iodide solution is that 30 mu L of octyl amine iodide solution with the concentration of 3mM is dropped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
Example 3
The present embodiment differs from embodiment 1 only in that step (5) and step (6) differ from embodiment 1, and step (5) and step (6) specifically include the following steps:
(5) Dropwise adding phenethyl ammonium iodide solution on the perovskite thin film layer, statically spin-coating for 20s on a spin coater at the rotating speed of 5000rpm, and annealing for 8min to obtain a 2-dimensional perovskite passivation layer;
wherein, the dropping amount of the phenethyl ammonium iodide solution is that 50 mu L of phenethyl ammonium iodide solution with the concentration of 0.7mM is dropped on the perovskite thin film layer with the area of 1 square centimeter.
(6) Dropwise adding an octyl amine iodide solution on the 2-dimensional perovskite passivation layer obtained in the step (5), statically spin-coating for 20s on a spin coater at the rotating speed of 5000rpm, and annealing for 8min to obtain a second passivation layer;
wherein the dropping amount of the octyl amine iodide solution is that 50 mu L of octyl amine iodide solution with the concentration of 7mM is dropped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
Example 4
This example differs from example 1 only in that the octyl amine iodide solution of step (6) was replaced with a heptyl amine iodide solution.
Example 5
This example differs from example 1 only in that the phenethylammonium iodide solution of step (5) was replaced with an o-fluorophenylethylamine iodide solution.
Example 6
This example differs from example 1 only in that the phenethyl ammonium iodide solution of step (5) was replaced with an o-fluorophenylethylamine iodide solution and the octyl amine iodide solution of step (6) was replaced with a heptyl amine iodide solution.
Example 7
This example differs from example 1 only in that the phenethyl ammonium iodide solution of step (5) was replaced with an n-butylamine iodine solution.
Example 8
This example differs from example 1 only in that the phenethyl ammonium iodide solution of step (5) was replaced with a n-butylamine iodide solution, and the octylamine iodide solution of step (6) was replaced with a heptyldimethylamine iodide solution.
Example 9
The present embodiment differs from embodiment 1 only in that step (5) differs from embodiment 1, and step (5) specifically includes the following steps:
(5) Dropwise adding phenethyl ammonium iodide solution on the perovskite thin film layer, statically spin-coating for 20s on a spin coater at the rotating speed of 5000rpm, and annealing for 8min to obtain a 2-dimensional perovskite passivation layer;
wherein, the dropping amount of the phenethyl ammonium iodide solution is that 50 mu L of phenethyl ammonium iodide solution with the concentration of 1mM is dropped on the perovskite thin film layer with the area of 1 square centimeter.
Example 10
The present embodiment differs from embodiment 1 only in that step (6) differs from embodiment 1, and step (6) specifically includes the following steps:
(6) Dropwise adding an octyl amine iodide solution on the 2-dimensional perovskite passivation layer obtained in the step (5), statically spin-coating for 20s on a spin coater at the rotating speed of 5000rpm, and annealing for 8min to obtain a second passivation layer;
wherein the dropping amount of the octyl amine iodide solution is that 50 mu L of octyl amine iodide solution with the concentration of 10mM is dropped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
Comparative example 1
This comparative example differs from example 1 only in that step (5) and step (6) are not included, that is, the hole transport layer Spiro-OMeTAD is spin-coated directly on the perovskite thin film layer without passivating the perovskite thin film layer.
Comparative example 2
This comparative example differs from example 1 only in that step (6) was not included, i.e. the resulting perovskite solar cell was prepared with only one passivation layer (phenethyl ammonium iodide passivation layer).
Comparative example 3
This comparative example differs from example 1 only in that step (5) was not included, i.e. the resulting perovskite solar cell was prepared with only one passivation layer (octylamine iodide passivation layer).
The 0.1 cm square example and the scaled perovskite solar cell were tested on an IV test instrument based on one sun standard light intensity with the start open voltage set to 1.1V, the end open voltage set to-0.1V, the number of scan steps 0.02V, and the delay time set to 50 ms.
The results of the performance tests are shown in table 1.
TABLE 1
| Voc(V) | Jsc(mA/cm 2 ) | FF(％) | PCE(％) | |
| Example 1 | 1.06 | 26.56 | 78.19 | 22.12 |
| Example 2 | 1.04 | 26.21 | 78.01 | 21.26 |
| Example 3 | 1.05 | 26.30 | 77.95 | 21.53 |
| Example 4 | 0.94 | 24.88 | 72.58 | 17.04 |
| Example 5 | 1.06 | 25.30 | 77.53 | 20.84 |
| Example 6 | 1.02 | 25.19 | 78.81 | 20.03 |
| Example 7 | 0.98 | 26.03 | 75.45 | 19.00 |
| Example 8 | 1.08 | 25.40 | 73.21 | 20.27 |
| Example 9 | 1.05 | 26.40 | 78.15 | 21.67 |
| Example 10 | 1.06 | 26.50 | 78.50 | 22.06 |
| Comparative example 1 | 0.99 | 25.14 | 75.10 | 18.85 |
| Comparative example 2 | 1.05 | 26.52 | 69.75 | 19.58 |
| Comparative example 3 | 1.01 | 25.37 | 78.15 | 19.97 |
Wherein, voc-open circuit voltage; jsc — short circuit current density; FF is the fill factor; PCE-photoelectric conversion efficiency.
As can be seen from Table 1, the perovskite solar cells provided by the embodiment of the invention have higher photoelectric conversion efficiency (17.04% -22.12%).
Compared with example 1, the photoelectric conversion efficiency of the perovskite solar cell provided in comparative example 1 is greatly reduced, and the photoelectric conversion efficiency of the perovskite solar cell provided in comparative examples 2-3 is obviously reduced.
The applicant states that the invention is illustrated by the above examples of the method of passivating a perovskite thin film layer and the perovskite solar cell produced thereby, but the invention is not limited to the above examples, i.e. it is not intended that the invention necessarily depends on the above examples to be carried out. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.
Claims (10)
1. A method of passivating a perovskite thin film layer, the method comprising the steps of:
(1) Coating the first solution on the perovskite thin film layer, and annealing to obtain a 2-dimensional perovskite passivation layer;
(2) Coating a second solution on the 2-dimensional perovskite passivation layer obtained in the step (1), and annealing to obtain a second passivation layer;
the first solution comprises any one or the combination of at least two of phenethyl ammonium iodide solution, o-fluorophenylethylamine iodide solution, n-butylamine iodine solution or butanediamine iodine solution;
the second solution includes an octyl amine iodide solution and/or a heptyl amine iodide solution.
2. The passivation method of claim 1, wherein the solvent in the first solution of step (1) comprises isopropanol or N, N-dimethylformamide;
preferably, the coating manner of the step (1) comprises spin coating;
preferably, the concentration of the first solution in the step (1) is 0.3-0.7mM;
preferably, the spin coating amount of the first solution in the step (1) is 30-50 μ L of the first solution with the concentration of 0.3-0.7mM, which is spin coated on the perovskite thin film layer with the area of 1 square centimeter.
3. Passivation method according to claim 1 or 2, characterized in that the way of application of step (1) comprises static spin coating;
preferably, the rotating speed of the static spin coating is 3000-5000rpm, and the time of the static spin coating is 20-40s;
preferably, the annealing time of the step (1) is 3-8min.
4. Passivation method according to any one of the claims 1-3, characterized in that the solvent in the second solution of step (2) is isopropanol;
preferably, the coating manner of the step (2) comprises spin coating;
preferably, the concentration of the second solution in the step (2) is 3-7mM;
preferably, the spin coating amount of the second solution in the step (2) is 30 to 50 μ L of the second solution with the concentration of 3 to 7mM on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
5. Passivation method according to any one of claims 1-4, characterized in that the way of coating in step (2) comprises static spin coating;
preferably, the rotating speed of the static spin coating is 3000-5000rpm, and the time of the static spin coating is 20-40s;
preferably, the annealing time of the step (2) is 3-8min.
6. A passivation method according to any one of claims 1-5, characterized in that the perovskite thin film layer is prepared by the following preparation method:
dissolving iodoformamidine, lead iodide and chloromethane in a mixed solution of dimethyl sulfoxide and dimethylformamide, and stirring to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution to obtain a perovskite precursor layer; and dropwise adding an ether anti-solvent on the perovskite precursor layer, and annealing to obtain the perovskite thin film layer.
7. Passivation method according to any one of claims 1-6, characterized in that it comprises the following steps:
(1) Dropwise adding the first solution on the perovskite thin film layer, statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a 2-dimensional perovskite passivation layer;
wherein the dropping amount of the first solution is that 30-50 mu L of the first solution with the concentration of 0.3-0.7mM is dropped on the perovskite thin film layer with the area of 1 square centimeter;
(2) Dropwise adding a second solution on the 2-dimensional perovskite passivation layer obtained in the step (1), statically spin-coating at the rotating speed of 3000-5000rpm for 20-40s, and annealing for 3-8min to obtain a second passivation layer;
wherein the dripping amount of the second solution is that 30-50 mu L of the second solution with the concentration of 3-7mM is dripped on the 2-dimensional perovskite passivation layer with the area of 1 square centimeter.
8. The perovskite solar cell comprises a hole transport layer, a perovskite thin film layer and an electron transport layer, and is characterized by further comprising a 2-dimensional perovskite passivation layer and a second passivation layer;
the 2-dimensional perovskite passivation layer and the second passivation layer are prepared by the passivation method of any one of claims 1 to 7.
9. The perovskite solar cell according to claim 8, wherein the 2-dimensional perovskite passivation layer and the second passivation layer are positioned between the perovskite thin film layer and the hole transport layer, and the 2-dimensional perovskite passivation layer is adjacent the perovskite thin film layer and the second passivation layer is adjacent the hole transport layer.
10. The perovskite solar cell of claim 8 or 9, further comprising a mesoporous thin film layer.
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