CN115548143A - Optical antenna metamaterial-enhanced black phosphorus photoelectric detector and preparation method thereof - Google Patents
Optical antenna metamaterial-enhanced black phosphorus photoelectric detector and preparation method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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Abstract
The invention provides an optical antenna metamaterial-enhanced black phosphorus photoelectric detector and a preparation method thereof, wherein the black phosphorus photoelectric detector comprises: a metal reflective layer; a transparent dielectric layer disposed over the metal reflective layer; a few black scale layers arranged on the transparent dielectric layer; the metal square sheet array optical antenna is positioned between the source electrode and the leakage stage. The black phosphorus photoelectric detector is integrated with black phosphorus through the metal square sheet array optical antenna, and the field enhancement of a local tangential photon mode is realized by using the coupling resonance of the microcavity and the metal square sheet array optical antenna, so that the light absorption of the black phosphorus is improved, and the light response is greatly improved.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a metamaterial-enhanced black phosphor photoelectric detector of an optical antenna and a preparation method thereof.
Background
The black phosphorus is a crystal with metallic luster, can be formed by converting white phosphorus at higher pressure and temperature, has a graphite-like lamellar structure and good conductivity, and is one of the focuses of research on novel two-dimensional semiconductors after graphene and molybdenum disulfide. Compared with graphene, the black phosphorus has more obvious advantages in the application of photoelectric material field: firstly, graphene has no semiconductor band gap, namely, the graphene is difficult to convert between a conductor and an insulator, and can not realize the logic on and off of a digital circuit, and black phosphorus has a semiconductor band gap, so that the defect can be well compensated; and secondly, the graphene has excellent electrical performance, the electron mobility of the few-layer black phosphorus sheet is 1000cm < 2 >/Vs, and the leakage current modulation rate is very high (10000 times of that of graphene), and is similar to that of the traditional material silicon of an electronic circuit.
Meanwhile, the optical properties of black phosphorus are also greatly advantageous over other materials including silicon and molybdenum sulfide. The semiconductor band gap is a direct band gap, namely the bottom of an electronic conduction band (conduction band) and the top of a non-conduction band (valence band) are at the same position, so that conduction from non-conduction is realized, electrons only need to absorb energy (light energy), and the traditional silicon or molybdenum sulfide and the like are indirect band gaps, so that not only energy (energy band change) but also momentum (position change) is required to be changed. This means that the black phosphor and light can be coupled directly, a property that makes the black phosphor an alternative material to future optoelectronic devices (e.g. photosensors) that can detect the entire visible to near infrared spectrum.
Although the prior art uses black phosphorus to manufacture a photoelectric detector, the prior black phosphorus photoelectric detector has the technical bottlenecks of poor light absorption efficiency and low light response.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The invention provides a black phosphorus photoelectric detector enhanced by an optical antenna metamaterial, and aims to solve the technical problems of poor light absorption efficiency and low light response of a black scale photoelectric detector in the prior art.
The invention provides a black phosphorus photoelectric detector enhanced by an optical antenna metamaterial, which comprises:
a metal reflective layer;
a transparent dielectric layer disposed over the metal reflective layer;
a few black scale layers arranged on the transparent dielectric layer;
the source electrode, the leakage stage and the metal square sheet array optical antenna are all arranged on the few black scale layers, and the metal square sheet array optical antenna is located between the source electrode and the leakage stage.
In an optional implementation manner of the first aspect of the present invention, the metal square plate array optical antenna includes a plurality of metal square plates arranged in rows and columns; in the row arrangement direction, the adjacent metal square sheets are communicated through metal thin lines, the width of each metal thin line is 1/6-1/4 of the width of each metal square sheet, and two ends in the row arrangement direction respectively point to the source electrode and the drain electrode.
In an optional embodiment of the first aspect of the present invention, the metal reflective layer, the source electrode, the drain electrode, and the metal square plate array optical antenna are all a Ti/Ag metal stack.
In an optional implementation manner of the first aspect of the present invention, a row arrangement period interval of the metal square sheet array optical antenna is smaller than a column arrangement period interval of the metal square sheet array optical antenna.
In an alternative embodiment of the first aspect of the present invention, the plurality of metal square pieces have the same size, and the length and width of each metal square piece are 1/40 to 1/20 of the wavelength of light.
In an optional embodiment of the first aspect of the present invention, a thickness of the metal reflective layer is greater than or equal to 2 times a skin depth of the electromagnetic wave in the metal reflective layer.
In an optional embodiment of the first aspect of the present invention, the thickness of the source electrode is less than 2 times of a skin depth of the electromagnetic wave in the source electrode, and the thickness of the drain electrode is less than 2 times of the skin depth of the electromagnetic wave in the drain electrode.
In an optional implementation manner of the first aspect of the present invention, each of the plurality of metal square pieces is a square piece, the length and the width of each metal square piece are 50nm, and the thickness of each metal square piece is 25nm; the width of the metal thin lines is 10nm; the row arrangement period interval of the metal square sheet array optical antenna is 110nm; the row arrangement period interval of the metal square sheet array optical antenna is 120nm; the thickness of the transparent dielectric layer is 40nm, and the thickness of the metal reflecting layer is 110nm.
In an alternative embodiment of the first aspect of the present invention, the thickness of the few-layer black scale layer is on the order of nanometers.
The invention provides a preparation method of an optical antenna metamaterial enhanced black phosphorus photoelectric detector, which comprises the following steps:
providing a substrate;
forming a metal reflecting layer on the substrate by an electron beam evaporation method;
generating a transparent dielectric layer on the metal reflecting layer by utilizing a plasma enhanced atomic layer deposition method;
transferring the black phosphorus raw material to the surface of the transparent dielectric layer by using a mechanical stripping method to obtain a few black scale layers;
generating a metal layer on the surface of the few-layer black scale layer by adopting an electron beam evaporation method;
and etching the metal layer by a photoresist mask method to obtain a source electrode, a drain electrode and a metal square array optical antenna, wherein the metal square array optical antenna is positioned between the source electrode and the drain electrode.
The beneficial effects are that: the invention provides an optical antenna metamaterial-enhanced black phosphorus photoelectric detector and a preparation method thereof, wherein the black phosphorus photoelectric detector comprises: a metal reflective layer; a transparent dielectric layer disposed on the metal reflective layer; a few black scale layers arranged on the transparent dielectric layer; the metal square sheet array optical antenna is positioned between the source electrode and the leakage stage. The black phosphorus photoelectric detector is integrated with black phosphorus through the metal square plate array optical antenna, and the field enhancement of a local tangential photon mode is realized by utilizing the coupling resonance of the microcavity and the metal square plate array optical antenna, so that the light absorption of the black phosphorus is improved, and the light response is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of an optical antenna metamaterial-enhanced black phosphorus photodetector according to the present invention.
Fig. 2 is a schematic structural diagram of a general black phosphorus photodetector according to a comparative example of the present invention.
FIG. 3 is a view showing SiO in a comparative example of the present invention 2 The (300 nm)/Si is a structural schematic diagram of the black phosphorus photoelectric detector integrated by the optical antenna of the substrate.
Fig. 4 is a schematic structural diagram of a black phosphorus photodetector with a long stripe grating as a comparative example surface layer according to the present invention.
Fig. 5 is a graph comparing the light absorption spectra of black phosphor of the black phosphor photodetector of fig. 1 and the black phosphor photodetector of fig. 2 under the same incident light conditions.
Fig. 6 is a graph comparing the light absorption spectra of black phosphor of the black phosphor photodetector of fig. 1 and the black phosphor photodetector of fig. 3 under the same incident light conditions.
Fig. 7 is a graph of the light absorption spectrum of black phosphorus under vertically and horizontally polarized light incidence conditions for the black phosphorus photodetector of fig. 1.
Fig. 8 is a graph of the light absorption spectrum of black phosphorus under vertically and horizontally polarized light incidence conditions for the black phosphorus photodetector of fig. 4.
Fig. 9 is a block flow diagram of a method for manufacturing an optical antenna metamaterial-enhanced black phosphorus photodetector according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive effort, are within the scope of protection of the present invention.
Referring to fig. 1, a first aspect of the present invention provides an optical antenna metamaterial enhanced black phosphor photodetector, comprising:
the metal reflection layer 10 is made of high-conductivity metal, optionally, the metal reflection layer may be a Ti/Ag metal lamination layer, the thickness of the metal reflection layer is greater than or equal to 2 times of the skin depth of the electromagnetic wave in the metal reflection layer, taking the Ti/Ag metal lamination layer as an example, in the Ti/Ag metal lamination layer, the thickness of the Ti layer is 10nm, and the thickness of the Ag layer is 100nm;
a transparent dielectric layer 20 disposed on the metal reflective layer 10, wherein the transparent dielectric layer 20 is a layer of medium transparent in the working band and having a thickness within a certain range, and the material of the transparent dielectric layer 20 can be selected
The few-layer black scale layer 30 is arranged on the transparent dielectric layer 20, optionally, the thickness of the few-layer black scale layer 30 is nano-scale, and the number of the few-layer black scale layer is less than 10;
the light-emitting diode comprises a source electrode 40, a leakage stage 50 and a metal square sheet array optical antenna 60, wherein the source electrode 40, the leakage stage 50 and the metal square sheet array optical antenna 60 are all arranged on the few-layer black scale layer 30, and the metal square sheet array optical antenna 60 is positioned between the source electrode 40 and the leakage stage 50. The source electrode 40, the drain electrode 50, and the metal square sheet array optical antenna 60 are also made of a high conductivity metal, and optionally, the source electrode 40, the drain electrode 50, and the metal square sheet array optical antenna 60 may all adopt a Ti/Ag metal laminate, where the thickness of the source electrode 40 is less than 2 times of the skin depth of the electromagnetic wave in the source electrode 40, the thickness of the drain electrode 50 is less than 2 times of the skin depth of the electromagnetic wave in the drain electrode 50, the thickness of the metal square sheet array optical antenna 60 is less than 2 times of the skin depth of the electromagnetic wave in the metal square sheet array optical antenna 60, and taking the Ti/Ag metal laminate as an example, in the Ti/Ag metal laminate, the thickness of the Ti layer is 5nm, and the thickness of the Ag layer is 20nm.
Specifically, the optical antenna 60 of the metal square array of the black phosphorus photodetector of the present invention includes a plurality of metal square pieces 70 arranged in rows and columns. Optionally, the sizes of the plurality of metal square pieces 70 are the same, the shape of the metal square pieces 70 may be a square, a rectangle, an equilateral hexagon or other polygonal shapes, the length and the width of each metal square piece 70 are 1/40 to 1/20 of the wavelength of light, and the row arrangement period interval of the metal square piece array optical antenna 60 is smaller than the column arrangement period interval of the metal square piece array optical antenna 60.
In an exemplary embodiment of the present invention, in a row arrangement direction (both ends of the row arrangement direction are respectively directed to the source electrode 40 and the drain electrode 50), the adjacent metal square pieces 70 are further communicated with each other through a metal thin line 80, and a width of the metal thin line 80 is 1/6 to 1/4 of a width of the metal square piece 70.
In the black phosphorus photoelectric detector, an optical antenna metamaterial (composed of a metal reflecting layer 10, a transparent dielectric layer 20 and a metal square array optical antenna 60) is integrated with black phosphorus, and the field enhancement of a local tangential photon mode is realized by using the coupling resonance of a microcavity and the optical antenna metamaterial, so that the light absorption of the black phosphorus is improved, and the light response is greatly improved. Based on the matching of the tangential photon mode and the black phosphorus light absorption direction, the equivalent absorption coefficient is improved, the absorption Q value is reduced, the radiation Q value of the metal square sheet array optical antenna is regulated and controlled by adjusting parameters such as the period of the metal square sheet array optical antenna 60, the thickness of a dielectric layer and the like, the system approaches a critical coupling state (impedance matching), incident electromagnetic waves are efficiently converted into a strong optical field which is locally near a black phosphorus material, the sufficient interaction of light and black phosphorus is realized, the light absorption of the black phosphorus is improved, and the light response of a device is integrally improved.
In order to better illustrate the performance effect of the black phosphorus photoelectric detector, the invention carries out comparison experiments:
the specification parameters of the black phosphorus photoelectric detector of the embodiment of the invention are as follows: the metal square sheets 70 are square sheets, and the length W and the width L of each metal square sheet 70 1 Is 50nm, the thickness h of the metal square piece 70 3 Is 25nm; the width L of the metal thin wire 80 2 Is 10nm; the row arrangement period interval Px of the metal square array optical antenna 60 is 110nm; the row arrangement period interval Py of the metal square array optical antenna 60 is 120nm; thickness h of the transparent dielectric layer 20 2 40nm, and the thickness h of the few-layer black scale layer 30 4 Is 5nm, the thickness h of the metal reflective layer 10 1 Is 110nm. The source electrode and the super-surface integrated drain electrode of the optical antenna are both made of Ti (5 nm)/Ag (20 nm), and the transparent dielectric layer is made of Al 2 O 3 As the dielectric layer, ti (10 nm)/Ag (100 nm) is used as the metal reflective layer.
The black phosphorus device of the comparison experiment adopts a black phosphorus device which is not integrated with the metal square array optical antenna (see fig. 2, except for the metal square array optical antenna, the material and the size parameter of each layer are the same), a black phosphorus device which is integrated with the metal square array optical antenna (see fig. 3, the bottommost layer is 500 μm thick silicon, and the transparent medium layer is 300nm silicon dioxide), and a black phosphorus device which is replaced by a long strip-shaped grating in the optical antenna array structure (see fig. 4, except for the shape of the optical antenna, the material and the size parameter of each layer are the same).
Referring to fig. 5, by comparison, it can be found that, compared with a common metal-black phosphorus-metal detector without the integration of the metal square plate array optical antenna metamaterial, the average light absorption rate of the black phosphorus photoelectric device integrated with the optical antenna metamaterial provided by the scheme of the invention in the near infrared band is 4 times that of the former.
See fig. 6, compared to the usual SiO 2 The black phosphorus photoelectric detector with the structure regulates and controls the absorption loss Q value and the radiation loss Q value of a system through a coupling microcavity at the bottom, so that a critical coupling state (namely an impedance matching state) with the maximum absorption rate is achieved, the average light absorption rate of the black phosphorus photoelectric detector in a near-infrared band is 3.4 times that of the black phosphorus photoelectric detector in the near-infrared band, and therefore the black phosphorus photoelectric detector enhanced by the metamaterial for the optical antenna provided by the technical scheme of the invention has strong absorption rate on light in any polarization state.
Referring to fig. 7 and 8, in contrast, if the optical antenna metamaterial is replaced by the elongated grating, the device has a polarization selectivity of more than 7 times in the near infrared band, and more energy is lost when light without a specific polarization direction is absorbed.
Referring to fig. 9, a second aspect of the present invention provides a method for manufacturing an optical antenna metamaterial-enhanced black phosphorus photodetector, including the following steps:
s100, providing a substrate;
s200, forming a metal reflecting layer on the substrate through an electron beam evaporation method;
s300, generating a transparent dielectric layer on the metal reflecting layer by utilizing a plasma enhanced atomic layer deposition method;
s400, transferring a black phosphorus raw material to the surface of the transparent dielectric layer by using a mechanical stripping method to obtain a few-layer black scale layer;
s500, generating a metal layer on the surface of the few-layer black scale layer by adopting an electron beam evaporation method;
s600, etching the metal layer through a photoresist mask method to obtain a source electrode, a drain electrode and a metal square sheet array optical antenna, wherein the metal square sheet array optical antenna is located between the source electrode and the drain electrode.
More specifically, the preparation method of the black phosphorus photodetector enhanced by the metamaterial of the optical antenna provided by the invention comprises the following steps:
1. firstly, ultrasonically cleaning a silicon wafer substrate by using acetone, then washing the surface of the silicon wafer by using isopropanol to remove redundant acetone, then washing the silicon wafer by using deionized water, and blow-drying to ensure that the surface of the silicon wafer substrate is clean and pollution-free.
2. On a clean silicon chip substrate, a Ti (10 nm)/Ag (100 nm) metal layer is deposited as a bottom metal reflecting layer by an electron beam evaporation method.
3. And depositing a dielectric layer transparent to the working waveband with a specific thickness on the bottom metal reflecting layer by utilizing Plasma Enhanced Atomic Layer Deposition (PEALD).
4. And transferring the few layers of black phosphorus to the surface of the insulating medium by using a mechanical stripping method.
5. And defining a pattern by using electron beam lithography, protecting bottom black phosphorus by using electron beam photoresist as a mask, bombarding a sample by using oxygen plasma, and bombarding to remove black phosphorus which is not protected by the photoresist so as to realize black phosphorus patterning treatment.
6. And defining a pattern by electron beam lithography, using photoresist as a mask, depositing Ti/Ag by an electron beam evaporation method, and finally obtaining the source electrode, the drain electrode and the optical antenna super surface by stripping.
In summary, the optical antenna metamaterial enhanced black phosphorus photodetector of the present invention has the following advantages:
1. the super-surface structure of the optical antenna enhances the absorption of black phosphor light, and the light absorption of the black phosphor light is greatly enhanced by means of high-efficiency coupling and light field local area. Finally, the effect of greatly improving the black phosphorus wide-spectrum light absorption rate in the near infrared band (1100-1700 nm) is obtained (the average absorption rate is more than 75%).
2. Compared with the traditional method of integrating the optical antenna metamaterial with the black phosphorus detector by using SiO 2 The black phosphorus integrated with the optical antenna with the substrate of Si regulates and controls the absorption loss Q value and the radiation loss Q value of a system through a coupling microcavity at the bottom, so that a critical coupling state (namely an impedance matching state) with maximized absorption rate is achieved, and the light absorption rate is more than 3 timesAnd (5) lifting.
3. The micro-nano optical structure of the detector and the black phosphorus are integrated on the same plane, the process compatibility is strong, the integration is convenient, the process flow is simple, the cost is reduced, and the dark current of the device is reduced while the high performance is realized.
Although the present invention has been described with reference to the preferred embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, and that various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention.
Claims (10)
1. An optical antenna metamaterial-enhanced black phosphorus photodetector, comprising:
a metal reflective layer;
a transparent dielectric layer disposed over the metal reflective layer;
a few black scale layers arranged on the transparent dielectric layer;
the metal square sheet array optical antenna is positioned between the source electrode and the leakage stage.
2. The optical antenna metamaterial-enhanced black phosphorus photodetector of claim 1, wherein the metal square array optical antenna comprises a plurality of metal squares arranged in rows and columns; in the row arrangement direction, the adjacent metal square sheets are communicated through metal thin lines, the width of each metal thin line is 1/6-1/4 of the width of each metal square sheet, and two ends in the row arrangement direction respectively point to the source electrode and the drain electrode.
3. The optical antenna metamaterial-enhanced black phosphorus photodetector of claim 2, wherein the metal reflective layer, the source electrode, the drain electrode, and the metal square array optical antenna are all Ti/Ag metal stacks.
4. The optical antenna metamaterial-enhanced black phosphorus photodetector of claim 2, wherein the row arrangement period interval of the metal square sheet array optical antennas is smaller than the column arrangement period interval of the metal square sheet array optical antennas.
5. The metamaterial reinforced black phosphorus photodetector for optical antennas of claim 2, wherein the plurality of metal square pieces have the same size, and the length and width of each metal square piece are 1/40 to 1/20 of the wavelength of light.
6. The optical antenna metamaterial enhanced black phosphorus photodetector of claim 1, wherein the thickness of the metal reflective layer is greater than or equal to 2 times the skin depth of the electromagnetic wave in the metal reflective layer.
7. The optical antenna metamaterial enhanced black phosphorus photodetector of claim 1, wherein the thickness of the source electrode is less than 2 times the skin depth of the electromagnetic wave in the source electrode, and the thickness of the drain electrode is less than 2 times the skin depth of the electromagnetic wave in the drain electrode.
8. The optical antenna metamaterial-enhanced black phosphorus photodetector of claim 2, wherein the plurality of metal square pieces are square pieces, the length and width of the metal square pieces are 50nm, and the thickness of the metal square pieces is 25nm; the width of the metal thin line is 10nm; the row arrangement period interval of the metal square sheet array optical antenna is 110nm; the row arrangement period interval of the metal square sheet array optical antenna is 120nm; the thickness of the transparent dielectric layer is 40nm, and the thickness of the metal reflecting layer is 110nm.
9. The optical antenna metamaterial enhanced black phosphorus photodetector of any one of claims 1 to 8, wherein the thickness of the few-layer black scale layer is nanometer scale.
10. A preparation method of an optical antenna metamaterial-enhanced black phosphorus photoelectric detector is characterized by comprising the following steps:
providing a substrate;
forming a metal reflecting layer on the substrate by an electron beam evaporation method;
generating a transparent dielectric layer on the metal reflecting layer by utilizing a plasma enhanced atomic layer deposition method;
transferring the black phosphorus raw material to the surface of the transparent dielectric layer by using a mechanical stripping method to obtain a few-layer black scale layer;
generating a metal layer on the surface of the few-layer black scale layer by adopting an electron beam evaporation method;
and etching the metal layer by a photoresist mask method to obtain a source electrode, a drain electrode and a metal square sheet array optical antenna, wherein the metal square sheet array optical antenna is positioned between the source electrode and the drain electrode.
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