CN115542034A - Voltage and current control method for tantalum capacitor formation process - Google Patents
Voltage and current control method for tantalum capacitor formation process Download PDFInfo
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- CN115542034A CN115542034A CN202110736895.5A CN202110736895A CN115542034A CN 115542034 A CN115542034 A CN 115542034A CN 202110736895 A CN202110736895 A CN 202110736895A CN 115542034 A CN115542034 A CN 115542034A
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Abstract
The invention relates to the technical field of tantalum capacitor formation, in particular to a voltage and current control method for a tantalum capacitor formation process, which comprises the following steps of 1: inputting working voltage and current parameter curves and voltage and current alarm values into the PLC automatic controller through an interface of a human-computer interaction unit; and 2, step: adjusting the output voltage of the power supply according to the difference value between the voltage value at two ends of the tantalum capacitor product and a set value monitored in real time, and eliminating the voltage division influence of a connecting wire and a contact point in the formation process of the tantalum capacitor; and 3, step 3: and the PLC judges whether the feedback voltage and current of the product end of the tantalum capacitor are abnormal or not according to the result obtained by calculation. The invention adjusts the output voltage of the direct current power supply by monitoring the difference value between the voltage value at the two ends of the tantalum capacitor product and the set value in real time, eliminates the voltage division influence of the connecting lead and the contact point in the formation process of the tantalum capacitor, increases the acquisition frequency, and automatically judges whether the voltage and the current have abnormal fluctuation or not by calculation.
Description
Technical Field
The invention relates to the technical field of tantalum capacitor formation, in particular to a voltage and current control method for a tantalum capacitor formation process.
Background
The tantalum capacitor needs to set voltage and current conditions to realize the anodic oxidation chemical reaction of the electrolytic water during formation, and the actual value deviation of the voltage and the current has great influence on the consistency of the formation result (the thickness of the anodic oxide layer) of the tantalum capacitor, so that the voltage and the current value in the formation process of the tantalum capacitor need to be monitored and managed.
The existing control technology is to set the voltage and current values of the direct current power supply before the formation of the tantalum capacitor, read and record the voltage and current output values of the direct current power supply, and check and record the actual voltage value of the tantalum product in the formation process of the tantalum capacitor to control the process, but the following defects still exist:
1. the product terminal voltage of the tantalum capacitor is lower than the output terminal voltage of the direct current power supply due to the influence of the connecting wire and the contact point between the direct current power supply and the tantalum capacitor product. The voltage difference is influenced by the length of a lead and the surface state of a contact point and generally consists of a fixed constant and a set voltage percentage, so that the voltage difference can be compensated by personal experience but cannot be refined, and the consistent product voltage during each tantalum capacitor formation production cannot be ensured;
2. although the process voltage and the current can be recorded on the power supply, and the process point detection recording voltage is also available, the process point detection recording voltage is not fine enough, and the abnormal state in the whole process cannot be monitored.
Therefore, one skilled in the art provides a voltage and current control method for tantalum capacitor formation process to solve the above problems.
Disclosure of Invention
The present invention is directed to a method for controlling voltage and current in tantalum capacitor formation process, so as to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a voltage and current control method for a tantalum capacitor formation process relates to the following equipment:
power supply: direct current is used for energy supply;
a voltage measurement unit: the voltage value of the end chemical process of the tantalum capacitor product is measured;
a current measuring unit: the current value is used for measuring the current value of the end formation process of the tantalum capacitor product;
a data acquisition unit: the device is used for collecting the measured voltage and current values of the product end of the tantalum capacitor in real time;
the PLC automatic controller: the output quantity of the direct current power supply is adjusted according to the comparison result of the actual value and the set value, and whether the feedback voltage and the current of the tantalum capacitor product end are abnormal or not is judged according to the software calculation formula result;
a human-computer interaction unit: the PLC is used for controlling the PLC and calling the test result;
in addition, the voltage and current control method of the device used in the tantalum capacitor formation process is as follows:
step 1: inputting working voltage and current parameter curves and voltage and current alarm values into the PLC automatic controller through an interface of a human-computer interaction unit;
step 2: adjusting the output voltage of the power supply according to the difference value between the voltage value at two ends of the tantalum capacitor product and a set value monitored in real time, and eliminating the voltage division influence of a connecting wire and a contact point in the formation process of the tantalum capacitor;
and 3, step 3: and the PLC judges whether the feedback voltage and current of the product end of the tantalum capacitor are abnormal or not according to the result obtained by calculation.
As a further aspect of the invention: in the step 1, the working voltage and current parameter curves are obtained by integrating various voltage and current conditions by adopting segmented execution capacity, each operation segment can independently set abnormal fluctuation of voltage or current, and the specific segments are as follows:
a first stage: in the current working mode, working is carried out at a constant current value Ia to a time Ta, the resistance of a thickening loop of an oxidation layer Ta2O5 is gradually increased in the process, the voltage is gradually increased to Ua, and abnormal fluctuation of the voltage is monitored in the process;
and a second stage: in the voltage working mode, the voltage is increased to Ub from Ua at the time of Tb with a certain slope, the resistance of the thickening loop of the oxide layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ia to Ib, and the abnormal fluctuation of the current is monitored in the process;
a third stage: in the voltage working mode, the constant voltage value Ub works until the time Tc, the loop resistance of the thickening of the oxidation layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ib to Ic, and the abnormal fluctuation of the current is monitored in the process.
As a further aspect of the invention: the voltage abnormal fluctuation monitoring method in the step 3 comprises the following steps: when the tantalum capacitor works in a current mode in the formation process of the tantalum capacitor, the current changes according to a preset curve, a Ta2O5 oxide layer is generated due to the anode tantalum, and the resistance R of the circuit is gradually increased during slow thickening, so that the voltage U = I R is slowly increased until Umax;
supposing that the real-time voltage measurement value of a tantalum capacitor product end is U2, the real-time voltage measurement value before time delta t (a settable value) is U delta t, setting a voltage abnormal fluctuation alarm parameter x (which can be a negative value), judging that the voltage is normal when U2-U delta t is not less than x, otherwise judging that the voltage is abnormal fluctuation, referring to a schematic diagram (figure 3) (figure 4), along with continuous voltage data acquisition, the U2 and the U delta t are continuously updated, and realizing voltage fluctuation state monitoring in the whole process.
As a further scheme of the invention: monitoring abnormal fluctuation of current in step 3: when the tantalum capacitor works in a voltage mode in the formation process of the tantalum capacitor, the voltage changes according to a preset curve, as the anode tantalum generates a Ta2O5 oxide layer and the resistance R of the circuit slowly increases during the slow thickening, the current I = U/R is slowly reduced until Imin;
assuming that the real-time current measurement value of a tantalum capacitor product end is I2, the real-time current measurement value before time delta t (a settable value) is I delta t, setting a current abnormal fluctuation alarm parameter y (which can be a negative value), judging that the current abnormal fluctuation alarm parameter y is normal when I2-I delta t is less than or equal to y, and judging that the current abnormal fluctuation alarm parameter y is abnormal, referring to a schematic diagram (figure 5) (figure 6), with continuous current data acquisition, I2 and I delta t are continuously updated, and current fluctuation state monitoring in the whole process is realized.
As a further scheme of the invention: the method for adjusting the output voltage of the power supply in the step 2 comprises the following steps:
supposing that the set voltage is U0, the output voltage of the power supply is U1, and the real-time measurement voltage of the product end of the tantalum capacitor is U2, wherein U2 is generally less than U1 due to the influence of the wire resistance and the contact resistance;
when the system is started, the automatic system gives an instruction to enable U1= U0, then the system reads a difference value between U2 and U0 by comparing U2 values, when U2 is smaller than U0, the U1 value is increased until U2= U0, when U2 is larger than U0 or the difference value between U2 and U0 exceeds a standard value, an abnormal prompt is given, therefore, the influences of line resistance and contact resistance can be automatically eliminated, the voltage value of a product end of the tantalum capacitor in the formation process is ensured to be consistent with a set value, and the consistency of the thickness of the anodic oxide layer is improved.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts automatic control at the product end of tantalum capacitor formation, adjusts the output voltage of the direct current power supply by monitoring the difference value between the voltage value at the two ends of the tantalum capacitor product and the set value in real time, and eliminates the voltage division influence of the connecting lead and the contact point in the tantalum capacitor formation process;
the invention increases the automatic acquisition frequency of the voltage and current values in the formation process of the tantalum capacitor, automatically judges whether the voltage and the current have abnormal fluctuation or not by calculation, and automatically records abnormal point data and time to give an abnormal state prompt.
Drawings
FIG. 1 is a schematic diagram of a voltage and current management process for tantalum capacitor formation;
FIG. 2 is a graph of the voltage and current parameters performed in segments for a tantalum capacitor formation process using voltage and current management;
FIG. 3 is a schematic diagram of a voltage and current regulation method for tantalum capacitor formation with normal voltage;
FIG. 4 is a schematic diagram of voltage anomalies in a voltage and current regulation approach for tantalum capacitor formation;
FIG. 5 is a schematic diagram of a voltage and current regulation method for tantalum capacitor formation with normal current flow;
FIG. 6 is a schematic diagram of current anomalies in a voltage and current management approach for tantalum capacitor formation.
Detailed Description
Referring to fig. 1 to 6, in an embodiment of the present invention, a voltage and current control method for a tantalum capacitor formation process relates to the following apparatus:
power supply: direct current is used for energy supply;
a voltage measurement unit: the voltage value of the end chemical process of the tantalum capacitor product is measured;
a current measuring unit: the current value is used for measuring the current value of the end formation process of the tantalum capacitor product;
a data acquisition unit: the device is used for collecting the measured voltage and current values of the product end of the tantalum capacitor in real time;
the PLC automatic controller: the output quantity of the direct current power supply is adjusted according to the comparison result of the actual value and the set value, and whether the feedback voltage and the current of the tantalum capacitor product end are abnormal or not is judged according to the software calculation formula result;
a human-computer interaction unit: the PLC is used for controlling the PLC and calling the test result;
in addition, the voltage and current control method of the device used in the tantalum capacitor formation process is as follows:
step 1: inputting working voltage and current parameter curves and voltage and current alarm values into the PLC automatic controller through an interface of a human-computer interaction unit;
and 2, step: adjusting the output voltage of the power supply according to the difference value between the voltage value at two ends of the tantalum capacitor product monitored in real time and a set value, and eliminating the voltage division influence of a connecting lead and a contact point in the formation process of the tantalum capacitor;
and 3, step 3: and the PLC judges whether the feedback voltage and current of the product end of the tantalum capacitor are abnormal or not according to the result obtained by calculation.
Further, the working voltage and current parameter curves in the step 1 are obtained by integrating various voltage and current conditions by adopting segmented execution capacity, each operation segment can independently set abnormal fluctuation of voltage or current, and the specific segments are as follows:
a first stage: in the current working mode, working is carried out for a time Ta at a constant current value Ia, the resistance of the thickening loop of the oxide layer Ta2O5 is gradually increased in the process, the voltage gradually rises to Ua, and abnormal fluctuation of the voltage is monitored in the process;
and a second stage: in the voltage working mode, the voltage rises from Ua to Ub at the time of Tb with a certain slope, the resistance of a thickening loop of an oxidation layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ia to Ib, and the abnormal fluctuation of the current is monitored in the process;
a third stage: in the voltage working mode, the constant voltage value Ub works until the time Tc, the loop resistance of the thickening of the oxidation layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ib to Ic, and the abnormal fluctuation of the current is monitored in the process.
Further, the voltage abnormal fluctuation monitoring method in the step 3 comprises the following steps: when the tantalum capacitor works in a current mode in the formation process of the tantalum capacitor, the current changes according to a preset curve, as the anode tantalum generates a Ta2O5 oxide layer and the resistance R of the circuit slowly increases during the gradual thickening, the voltage U = I × R slowly increases until Umax;
supposing that the real-time voltage measurement value of a tantalum capacitor product end is U2, the real-time voltage measurement value before time delta t (a settable value) is U delta t, setting a voltage abnormal fluctuation alarm parameter x (which can be a negative value), judging that the voltage is normal when U2-U delta t is not less than x, otherwise judging that the voltage is abnormal fluctuation, referring to a schematic diagram (figure 3) (figure 4), along with continuous voltage data acquisition, the U2 and the U delta t are continuously updated, and realizing voltage fluctuation state monitoring in the whole process.
Further, monitoring abnormal fluctuation of the current in step 3: when the tantalum capacitor works in a voltage mode in the formation process of the tantalum capacitor, the voltage changes according to a preset curve, a Ta2O5 oxide layer is generated due to the anode tantalum, and the resistance R of a slowly thickened loop is increased, so that the current I = U/R is slowly reduced until Imin;
assuming that the real-time current measurement value of a tantalum capacitor product end is I2, the real-time current measurement value before time delta t (a settable value) is I delta t, setting a current abnormal fluctuation alarm parameter y (which can be a negative value), judging that the current abnormal fluctuation alarm parameter y is normal when I2-I delta t is less than or equal to y, and judging that the current abnormal fluctuation alarm parameter y is abnormal, referring to a schematic diagram (figure 5) (figure 6), with continuous current data acquisition, I2 and I delta t are continuously updated, and current fluctuation state monitoring in the whole process is realized.
Further, the method for adjusting the output voltage of the power supply in step 2 is as follows:
supposing that the set voltage is U0, the output voltage of the power supply is U1, and the real-time measurement voltage of the product end of the tantalum capacitor is U2, wherein U2 is less than U1 due to the influence of wire resistance and contact resistance;
when the system is started, the automatic system gives an instruction to enable U1= U0, then the system reads a difference value between U2 and U0 by comparing U2 values, when U2 is smaller than U0, the U1 value is increased until U2= U0, when U2 is larger than U0 or the difference value between U2 and U0 exceeds a standard value, an abnormal prompt is given, therefore, the influences of line resistance and contact resistance can be automatically eliminated, the voltage value of a product end of the tantalum capacitor in the formation process is ensured to be consistent with a set value, and the consistency of the thickness of the anodic oxide layer is improved.
In summary, the following steps: the invention adopts automatic control at the product end of tantalum capacitor formation, adjusts the output voltage of the direct current power supply by monitoring the difference value between the voltage value at the two ends of the tantalum capacitor product and the set value in real time, and eliminates the voltage division influence of the connecting lead and the contact point in the tantalum capacitor formation process;
the invention increases the automatic acquisition frequency of the voltage and current values in the formation process of the tantalum capacitor, automatically judges whether the voltage and the current have abnormal fluctuation or not by calculation, and automatically records abnormal point data and time to give an abnormal state prompt.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered as the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (5)
1. A voltage and current control method for a tantalum capacitor formation process is characterized by comprising the following equipment:
power supply: direct current is used for energy supply;
a voltage measurement unit: the voltage value of the end formation process of the tantalum capacitor product is measured;
a current measuring unit: the current value is used for measuring the current value of the end formation process of the tantalum capacitor product;
a data acquisition unit: the device is used for collecting the measured voltage and current values of the product end of the tantalum capacitor in real time;
the PLC automatic controller: the output quantity of the direct current power supply is adjusted according to the comparison result of the actual value and the set value, and whether the feedback voltage and the current of the tantalum capacitor product end are abnormal or not is judged according to the calculation result;
a human-computer interaction unit: the PLC is used for controlling the PLC and calling a test result;
in addition, the voltage and current control method of the device used in the tantalum capacitor formation process is as follows:
step 1: inputting working voltage and current parameter curves and voltage and current alarm values into the PLC automatic controller through an interface of a human-computer interaction unit;
step 2: adjusting the output voltage of the power supply according to the difference value between the voltage value at two ends of the tantalum capacitor product monitored in real time and a set value, and eliminating the voltage division influence of a connecting lead and a contact point in the formation process of the tantalum capacitor;
and 3, step 3: and the PLC automatic controller judges whether the feedback voltage and the current of the product end of the tantalum capacitor are abnormal or not according to the result obtained by calculation.
2. The method of claim 1, wherein the operating voltage and current parameter curves in step 1 are obtained by integrating various voltage and current conditions by using a segmented execution capacity, and each operation segment can independently set abnormal voltage or current fluctuation, and the specific segments are as follows:
a first stage: in the current working mode, working is carried out for a time Ta at a constant current value Ia, the resistance of the thickening loop of the oxide layer Ta2O5 is gradually increased in the process, the voltage gradually rises to Ua, and abnormal fluctuation of the voltage is monitored in the process;
and a second stage: in the voltage working mode, the voltage is increased to Ub from Ua at the time of Tb with a certain slope, the resistance of the thickening loop of the oxide layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ia to Ib, and the abnormal fluctuation of the current is monitored in the process;
a third stage: in the voltage working mode, the constant voltage value Ub works until the time Tc, the loop resistance of the thickening of the oxidation layer Ta2O5 is gradually increased in the process, the current is gradually reduced from Ib to Ic, and the abnormal fluctuation of the current is monitored in the process.
3. The method of claim 1 or 2, wherein the monitoring method of abnormal fluctuation of voltage in step 3 comprises: when the tantalum capacitor works in a current mode in the formation process of the tantalum capacitor, the current changes according to a preset curve, a Ta2O5 oxide layer is generated due to the anode tantalum, and the resistance R of the circuit is gradually increased during slow thickening, so that the voltage U = I R is slowly increased until Umax;
assuming that the real-time voltage measurement value of a tantalum capacitor product end is U2, the real-time voltage measurement value before time delta t is U delta t, setting a voltage abnormal fluctuation alarm parameter x, judging that the voltage abnormal fluctuation alarm parameter is normal when U2-U delta t is larger than or equal to x, otherwise judging that the voltage abnormal fluctuation alarm parameter is abnormal fluctuation, and continuously updating U2 and U delta t along with continuously acquiring voltage data to realize voltage fluctuation state monitoring of the whole process.
4. The method of claim 1 or 2, wherein the monitoring of abnormal current fluctuation in step 3 comprises: when the tantalum capacitor works in a voltage mode in the formation process of the tantalum capacitor, the voltage changes according to a preset curve, a Ta2O5 oxide layer is generated due to the anode tantalum, and the resistance R of a slowly thickened loop is increased, so that the current I = U/R is slowly reduced until Imin;
assuming that the real-time current measurement value at the product end of the tantalum capacitor is I2, the real-time current measurement value before time delta t is I delta t, setting a current abnormal fluctuation alarm parameter y, judging that the current abnormal fluctuation alarm parameter is normal when I2-I delta t is less than or equal to y, otherwise judging that the current abnormal fluctuation alarm parameter is abnormal fluctuation, and continuously updating the I2 and the I delta t along with continuously acquiring current data to realize the current fluctuation state monitoring of the whole process.
5. The method of claim 1, wherein the method of adjusting the output voltage of the power supply in step 2 comprises:
supposing that the set voltage is U0, the output voltage of the power supply is U1, and the real-time measurement voltage of the product end of the tantalum capacitor is U2, wherein U2 is less than U1 due to the influence of wire resistance and contact resistance;
when the system is started, the automatic system gives an instruction to enable U1= U0, then the system reads a difference value between U2 and U0 by comparing the U2 value, when U2 is smaller than U0, the U1 value is increased until U2= U0, and when U2 is larger than U0 or the difference value between U2 and U0 exceeds the standard, an abnormal prompt is given, so that the influences of line resistance and contact resistance can be automatically eliminated, and the voltage value of a product end of the tantalum capacitor in the formation process is ensured to be consistent with a set value.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116736181A (en) * | 2023-06-29 | 2023-09-12 | 成都大博电气有限责任公司 | Method for judging capacitor short circuit in capacitor forming process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116736181A (en) * | 2023-06-29 | 2023-09-12 | 成都大博电气有限责任公司 | Method for judging capacitor short circuit in capacitor forming process |
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