CN115528395A

CN115528395A - Four-corner element structure, dielectric filter and base station equipment

Info

Publication number: CN115528395A
Application number: CN202110715021.1A
Authority: CN
Inventors: 吴克利; 张妍; 王华红
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2021-06-25
Filing date: 2021-06-25
Publication date: 2022-12-27
Also published as: WO2022267951A1

Abstract

The application provides a four corners component structure, dielectric filter and base station equipment. The four-corner element structure comprises a first surface and a second surface which are arranged oppositely. The first surface includes four edges. The first surface is provided with four resonance blind holes and at least four coupling holes. Each resonance blind hole is correspondingly positioned on one angular direction of the four-corner element structure so as to form four resonators of the four-corner element structure. And a central connecting line between the centers of the resonant blind holes in every two adjacent angular directions corresponds to at least one coupling hole. The coupling holes include coupling blind holes and/or coupling through holes. The coupling blind hole penetrates through the first surface. The coupling through hole penetrates through the first surface and the second surface. The perimeter of the coupling through hole is smaller than 1/2 of the side length of any one edge.

Description

Four-corner element structure, dielectric filter and base station equipment

Technical Field

The present application relates to the field of communications technologies, and in particular, to a four-corner element structure, a dielectric filter, and a base station device.

Background

With the increasing density of spectrum resources of modern wireless communication, the specification requirements of the filter are becoming stricter and stricter, including out-of-band rejection, insertion loss, size, cost, and the like. The dielectric filter is constructed by coupling between dielectric resonators. In order to achieve a higher degree of suppression of the dielectric filter, a common method is to cascade a plurality of basic cross-coupling elements. The basic cross-coupling elements include a triangle (triplet) element (also called a triangle element structure), a box (box) quad element (also called a box quad element structure), and a quad element (also called a quad element structure).

The existing four-corner element has the limitation of the degree of freedom of design of the suppression degree of the dielectric filter due to the structural design. For example, a box-type quad cell can only produce one transmission zero, and the relative positions of the two transmission zeros of the quad cell are not adjustable. The transmission zero is a trap point of a forward transmission coefficient (also referred to as S21) of the scattering parameter (also referred to as S parameter).

Disclosure of Invention

The embodiment of the application provides a four-corner element structure capable of improving the design freedom degree of a suppression degree, a dielectric filter and relevant base station equipment.

In a first aspect, the present application provides a quadrilateral element structure, including a first surface and a second surface that are disposed opposite to each other, where the first surface includes four edges; four resonance blind holes and at least four coupling holes are formed in the first surface; each resonance blind hole is correspondingly positioned on one angular direction of the tetragonal element structure so as to form four resonators of the tetragonal element structure; a central connecting line between the centers of the resonant blind holes in every two adjacent angular directions is arranged corresponding to at least one coupling hole; the coupling holes comprise coupling blind holes and/or coupling through holes, the coupling blind holes penetrate through the first surface, the coupling through holes penetrate through the first surface and the second surface, and the perimeter of each coupling through hole is smaller than 1/2 of the side length of any edge.

Four resonant blind holes are located in one angular orientation of the quad element structure to form four resonators of the quad element structure. The coupling blind holes are used for controlling capacitive coupling between the resonators, and the coupling through holes are used for controlling magnetic coupling between the resonators. The combination of the coupling blind holes and the coupling through holes can simultaneously control the adjacent coupling between the resonators of the four-corner element structure and the equivalent diagonal cross coupling between the two resonators on the same diagonal of the four-corner element structure. Thus, if the structure of the four-corner element is a box-type four-corner element, the box-type four-corner element can generate two near-end transmission zero points, so that the suppression degree of the dielectric filter is increased, and the design freedom degree of the suppression degree of the box-type four-corner element is also improved. If the foursquare element structure is a quadruple foursquare element, the relative positions of two near-end transmission zero points of the quadruple foursquare element can be designed by adjusting the physical parameters of each coupling hole in the design stage of the quadruple foursquare element. The physical parameters include the position of the coupling hole and the hole structure parameters of the coupling hole. The hole structure parameters include the hole shape of the coupling hole (coupling through hole or coupling blind hole), the hole depth, the hole diameter, and the like.

According to the first aspect, in a first possible implementation manner of the first aspect of the present application, centers of the four blind resonant holes are connected to form an inner region, and a center of at least one of the four coupling holes is located in the inner region, so as to weaken coupling strength of equivalent diagonal cross coupling between two resonators on corresponding diagonals of the tetragonal element structure.

According to the first aspect or the first possible implementation manner of the first aspect of the present application, in a second possible implementation manner of the first aspect of the present application, centers of the four blind resonant holes are connected to form an inner peripheral area, and a center of at least one of the four coupling holes is located outside the inner peripheral area, so as to enhance coupling strength of equivalent diagonal cross coupling between two resonators on corresponding diagonals of the four-corner element structure.

According to the first aspect or the first to the second possible implementation manners of the first aspect of the present application, in a third possible implementation manner of the first aspect of the present application, one of the at least four coupling holes is a coupling blind hole.

According to the first aspect or the first to third possible implementation manners of the first aspect of the present application, in a fourth possible implementation manner of the first aspect of the present application, a depth of the coupling blind hole is greater than a depth of the resonance blind hole, so as to control capacitive coupling.

According to the first aspect or the first to fourth possible implementation manners of the first aspect of the present application, in a fifth possible implementation manner of the first aspect of the present application, all the coupling holes are coupling through holes.

In a sixth possible implementation form of the first aspect of the present application, according to the first aspect or the first to fifth possible implementation forms of the first aspect of the present application, the shape of the coupling hole is one of a circle, an ellipse, and a square.

In a second aspect, the present application further provides a dielectric filter, including the four-corner element structure, the input signal source, and the output load described in the first aspect or the first to sixth possible implementations of the first aspect; the input signal source is connected with one of the four resonators, and the output load is connected with the other of the four resonators.

According to a second aspect, in a first possible implementation manner of the second aspect of the present application, the resonator connected to the input signal source and the resonator connected to the output load signal are provided corresponding to the same edge of the four-corner element structure. Therefore, the structure of the four-corner element becomes a box-type four-corner element, the box-type four-corner element can generate two near-end transmission zero points, and the design freedom degree of the suppression degree of the dielectric filter is increased.

According to a second aspect or the first possible implementation manner of the first aspect of the present application, in a second possible implementation manner of the second aspect of the present application, the resonator connected to the input signal source and the resonator connected to the output load signal are located on the same diagonal line of the four-corner element structure. The four-corner element structure is a quadruple four-corner element, the relative positions of two near-end transmission zero points of the quadruple four-corner element can be designed by adjusting the physical parameters of each coupling hole in the design stage of the quadruple four-corner element, and the design freedom of the inhibition degree of the dielectric filter is increased.

In a third possible implementation manner of the second aspect of the present application, the dielectric filter further includes at least one partition through-groove that penetrates through the first surface and the second surface, and one partition through-groove is provided between every two adjacent four-corner element structures.

In a third aspect, the present application provides a base station device, including the dielectric filter and the antenna according to the second aspect or the first to third possible implementation manners of the second aspect of the present application, where the dielectric filter is in signal connection with the antenna.

Drawings

Fig. 1 is a schematic block diagram of a link connection of a base station apparatus provided in the present application;

fig. 2 is a perspective view of a dielectric filter according to a first embodiment of the present application;

FIG. 3 is a schematic perspective view of a quad-cell structure of a dielectric filter;

FIG. 4 is a schematic diagram of the distribution of four resonators in a quad configuration;

fig. 5 is a schematic plan view of the dielectric filter shown in fig. 2;

FIG. 5a is a schematic view of a possible arrangement area of the coupling hole;

FIG. 6 is a schematic plan view of one possible configuration of a quad cell configuration;

FIG. 7 is a schematic plan view of another possible configuration of a quad cell configuration;

FIG. 8 is a schematic diagram of a mathematical topology model of the dielectric filter shown in FIG. 2;

FIGS. 9a, 9b, and 9c are diagrams showing simulation results of the dielectric filter;

FIG. 10 is a perspective view of another possible configuration of the quad cell configuration;

fig. 11 is a schematic perspective view of a dielectric filter according to a second embodiment;

FIG. 12 is a schematic diagram of a mathematical topology model of the dielectric filter shown in FIG. 11;

FIG. 13a, FIG. 13b and FIG. 13c are schematic diagrams showing simulation results of the dielectric filter;

fig. 14 is a perspective view of a dielectric filter according to a third embodiment;

FIG. 15 is a diagram of a mathematical topology model of the dielectric filter of FIG. 14;

fig. 16 is a diagram showing a simulation result of the dielectric filter shown in fig. 14;

fig. 17 is a schematic perspective view of a dielectric filter according to a fourth embodiment;

FIG. 18 is a diagram of a mathematical topology model of the dielectric filter of FIG. 17;

fig. 19 is a diagram showing a simulation result of the dielectric filter shown in fig. 17.

Detailed Description

In a wireless communication system, a base station device as a communication device includes a filter at a radio frequency front end thereof, so as to filter a received signal of an antenna through the filter and transmit the filtered signal to a post-stage receiving circuit, so as to suppress an influence of a received out-of-band spurious system signal on the post-stage receiving circuit, or filter a transmitted signal of the post-stage transmitting circuit and transmit the filtered signal through the antenna, so as to prevent the out-of-band spurious system signal from entering the antenna to be transmitted.

Referring to fig. 1, a base station 1000 includes a power amplifier 110, a dielectric filter 100 and an antenna 130. The power amplifier 110 is used to amplify the signal. The dielectric filter 100 is signal connected to an antenna 130. The dielectric filter 100 is used for filtering the signal transmitted from the power amplifier 110. The antenna 130 is used for transmitting the signal filtered by the dielectric filter 100.

The above application scenario is merely an example, and the dielectric filter 100 is used as a transmission filter. It is understood that the dielectric filter 100 may be used as a receive filter in other application scenarios.

Referring to fig. 2, a dielectric filter 100 according to a first embodiment of the present invention includes a quad-cell structure 30, an input signal source 37 and an output load 39. The quad 30 is in signal communication with a signal input source 37 and the quad 30 is in signal communication with an output load 39 to filter the signal passing through the quad 30.

The four corner element structure 30 includes a first surface 301 and a second surface 303 disposed opposite each other. The first surface 301 and the second surface 303 are the outer surfaces of the four corner element structure 30.

It should be noted that the quadrilateral element structure 30 includes a dielectric body and a conductive layer coated on the surface of the dielectric body. The dielectric body is made of a material including a solid dielectric material, such as an insulating material, e.g., ceramic, polymer, etc. The material constituting the conductive layer may be a metal material, such as silver. The conductive layer may be formed by electroplating a metal on the surface of the dielectric body using an electroplating process. In other words, the outer surface of the four-corner rounded structure 30 is a metal surface.

The first surface 301 includes four edges 305. The first surface 301 is provided with four blind resonant holes 31 and at least four coupling holes 33. Each resonant blind hole 31 is located in one of the angular orientations of the four-corner element structure 30 to form four resonators of the four-corner element structure 30. Each resonant blind hole 31 and its surrounding dielectric and metal planes form a resonator. In this embodiment, the resonator is a quasi-TEM mode resonator.

Each edge 305 is provided corresponding to at least one coupling hole 33. A central connecting line between the centers of the resonant blind holes 31 in each two adjacent angular orientations corresponds to at least one coupling hole 33. The at least four coupling holes 33 include one coupling blind hole 331 and at least three coupling through holes 333. The coupling blind hole 331 penetrates the first surface 301 but does not penetrate the second surface 303 for capacitive coupling. A coupling via 333 extends through the first surface 301 and the second surface 303 for controlling the magnetic coupling. In this embodiment, the depth of the coupling blind hole 331 is greater than the depth of the resonant blind hole 31, thereby controlling capacitive coupling. The perimeter of each coupling via 333 is less than 1/2 of the length of any one edge 305. It is to be understood that the shape of the four corner element structure 30 includes, but is not limited to, a square.

The control of the capacitive coupling by the coupling blind hole 331 means that the capacitive coupling between the resonators with different strengths is obtained by setting physical parameters of the coupling blind hole 331. The coupling via 333 controls magnetic coupling, which means that magnetic coupling of different strengths between resonators is obtained by setting physical parameters of the coupling via 333. The physical parameters include the position of the coupling hole 33 (coupling through hole 333 or coupling blind hole 331) and hole structure parameters. The hole structure parameters include the hole shape of the coupling hole (coupling through hole or coupling blind hole), the hole depth, the hole diameter, and the like.

The resonant blind hole 31 in each angular orientation of the quadrilateral element configuration 30 is disposed adjacent to the resonant blind hole 31 in an adjacent one of the angular orientations. Every two adjacent resonant blind holes 31 form a group of adjacent resonant blind holes. Therefore, four resonator blind holes form four groups of adjacent resonator blind holes. The four groups of adjacent resonant blind hole groups comprise a first adjacent resonant blind hole group, a second adjacent resonant blind hole group, a third adjacent resonant blind hole group and a fourth adjacent resonant blind hole group.

Specifically, referring to fig. 3, the four resonant blind vias 31 include a resonant blind via 311, a resonant blind via 313, a resonant blind via 315, and a resonant blind via 317. The resonance blind hole 311 and the resonance blind hole 313 are arranged side by side and adjacent to each other, and the resonance blind hole 311 and the resonance blind hole 313 form a first adjacent resonance blind hole group. The resonant blind hole 311 and the resonant blind hole 315 are arranged in parallel and adjacent to each other, and the resonant blind hole 311 and the resonant blind hole 315 form a second adjacent resonant blind hole group. The resonant blind hole 315 and the resonant blind hole 317 are arranged side by side and adjacent to each other, and the resonant blind hole 315 and the resonant blind hole 317 form a third adjacent resonant blind hole group. The resonant blind hole 317 and the resonant blind hole 313 are arranged in parallel and adjacent to each other, and the resonant blind hole 315 and the resonant blind hole 313 form a fourth adjacent resonant blind hole group. Two resonant blind holes 311 in each set of adjacent resonant blind holes are disposed corresponding to one edge 305 of the quad-element structure 30. The resonant blind hole 311 and the resonant blind hole 317 are located substantially on the same diagonal of the quad structure 30. The blind

resonant vias

313 and 315 are located substantially on the same diagonal of the quad structure 30.

The four resonators of the four corner element structure 30 are generally "field" shaped. Each resonator is located in a corresponding angular orientation of one of the four corner element structures 30. The resonators in each two angular orientations are arranged adjacently. Four resonators form four groups of adjacent resonator groups, and each group of adjacent resonator groups comprises two resonators arranged in the same row or column. The four resonators form two sets of diagonal cross-resonator groups, each set of cross-resonator groups including two resonators located on the same diagonal of the quad-element structure 30.

Referring to fig. 3 and 4, the four resonators include a first resonator 101, a second resonator 102, a third resonator 103, and a fourth resonator 104. The resonant blind hole 311 forms the first resonator 101 with the surrounding dielectric and metal plane. The resonant blind via 313 forms the second resonator 102 with the surrounding dielectric and metal plane. The resonant via 315 forms the third resonator 103 with the surrounding dielectric and metal plane. The resonant blind via 317 forms the fourth resonator 104 with the surrounding dielectric and metal plane. The first resonator 101 is in signal connection with the input signal source 37, and the fourth resonator 104 is in signal connection with the output load 39.

The first resonator 101 is arranged side by side with the second resonator 102, the first resonator 101 and the second resonator 102 forming a set of adjacent resonators. The first resonator 101 and the third resonator 103 are arranged in parallel, and the first resonator 101 and the third resonator 103 form a group of adjacent resonators. The third resonator 103 is arranged side by side with the fourth resonator 104, and the third resonator 103 and the fourth resonator 104 form a set of adjacent resonators. The second resonator 102 is juxtaposed with the fourth resonator 104, and the second resonator 102 and the fourth resonator 104 form a group of adjacent resonators. The first resonator 101 and the fourth resonator 104 are located substantially on the same diagonal of the quad-element structure 30, and the first resonator 101 and the fourth resonator 104 form a cross-resonator group. The second resonator 102 and the third resonator 103 are located substantially on the same diagonal of the quad 30, and the second resonator 102 and the third resonator 103 form a diagonally crossed group.

It should be noted that fig. 4 is only an example of the distribution of four resonators on the quad structure, and is not a true boundary line of the four resonators of the quad structure 30.

The coupling blind hole 331 is located between the resonator blind hole 311 and the resonator blind hole 313 of the first adjacent resonator blind hole group for controlling capacitive coupling. The three coupling vias include coupling via 3331, coupling via 3333, and coupling via 3335. The coupling through hole 3331 is located between the resonator blind hole 311 and the resonator blind hole 315 of the second adjacent resonance blind hole group, the coupling through hole 3333 is located between the resonator blind hole 315 and the resonator blind hole 317 of the third adjacent resonance blind hole group, and the coupling through hole 3335 is located between the resonator blind hole 317 and the resonator blind hole 315 of the fourth adjacent resonance blind hole group. The coupling via 3331, the coupling via 3333, and the coupling via 3335 are used to control the magnetic coupling. The present application does not limit the coupling blind via 331 to be disposed between the resonant blind via 311 and the resonant blind via 313, and the coupling blind via 331 may also be disposed between two resonant blind vias 31 of other adjacent resonant blind via groups, for example, between the resonant blind via 311 and the resonant blind via 315 of a second adjacent resonant blind via group. It is understood that a coupling blind hole 331 is provided between two resonant blind holes 311 of one of the four adjacent resonant blind hole groups, and at least one coupling through hole 333 is provided between two resonant blind holes 311 of each of the remaining three adjacent resonant blind hole groups.

The combination of the coupling via 333 and the coupling blind hole 331 enables simultaneous control of the adjacent coupling between adjacent resonators of the quad cell structure 30 and the diagonal cross-coupling between two resonators on each diagonal of the quad cell structure 30. Adjacent coupling refers to coupling between any adjacent resonators in the quad cell structure. For example, the combination of the coupling via 333 and the coupling blind hole 331 enables control of the adjacent coupling between the first resonator 101 and the second resonator 102, the adjacent coupling between the first resonator 101 and the third resonator 103, the adjacent coupling between the third resonator 103 and the fourth resonator 104, and the adjacent coupling between the second resonator 102 and the fourth resonator 104. Diagonal cross coupling refers to the coupling between two resonators on any one diagonal of a quad cell structure. For example, the combination of the coupling via 333 and the coupling blind hole 331 enables control of diagonal cross-coupling between the first resonator 101 and the fourth resonator 104, and diagonal cross-coupling between the second resonator 102 and the third resonator 103.

The resonant blind hole 31 is a substantially circular hole, and the center of the resonant blind hole 31 is the center of the resonant blind hole 31. A central connecting line between the centers of the resonant blind holes 311 in each two adjacent angular orientations corresponds to at least one coupling hole 33.

Referring to fig. 4 and fig. 5, the centers of the four resonant blind holes 311 are connected to form an inner area 34. More specifically, a connection line between the center of the resonant blind hole 311 and the center of the resonant blind hole 313 is a first center connection line A1, and the coupling blind hole 331 is disposed corresponding to the first center connection line A1. The connection line between the center of the resonant blind hole 313 and the center of the resonant blind hole 315 is a second center connection line A2, and the coupling through hole 3331 is disposed corresponding to the second center connection line A2. The connection line between the center of the resonant blind hole 315 and the center of the resonant blind hole 317 is a third center connection line A3, and the coupling through hole 3333 is disposed corresponding to the third center connection line A3. A connection line between the center of the resonant blind hole 317 and the center of the resonant blind hole 313 is a fourth center connection line A4, and the coupling through hole 3335 is disposed corresponding to the fourth center connection line A4. The first center line A1 is substantially parallel to the third center line A3. The second center line A2 is substantially parallel to the fourth center line A4. The first center connecting line A1, the second center connecting line A2, the third center connecting line A3 and the fourth center connecting line A4 enclose an inner area 34. It is understood that the first center line A1 and the third center line A3 may not be parallel, and the second center line A2 and the fourth center line A4 may not be parallel.

In the present embodiment, the coupling hole 33 is circular, and the center of the coupling hole 33 is the center of the circle. It will be appreciated that the coupling aperture 33 may also be oval, square, etc. For example, when the coupling hole 33 has an elliptical shape, the center of the coupling hole 33 is the midpoint of the major axis of the elliptical shape. When the coupling hole 33 has a square shape, the center of the coupling hole 33 is the intersection of two diagonal lines of the square shape. The physical parameters of the respective coupling holes 33 (331, 3331, 3333, 3335) affect the coupling strength between the respective resonators. For example, when the center of the coupling blind hole 331 is located inside the inner peripheral region 34 or outside the inner peripheral region 34, the capacitive coupling of strong dispersion can be controlled, that is, the capacitive coupling coefficient changes rapidly with frequency. In the present embodiment, since the centers of the four coupling holes 33 (including the one coupling blind via 331 and the three coupling through vias 333) are all located in the inner peripheral region 34, the strength of the diagonal cross-coupling between the first resonator 101 and the fourth resonator 104 is weak, and the strength of the diagonal cross-coupling between the second resonator 102 and the third resonator 103 is weak.

The center of each coupling hole 33 may also be located outside the inner peripheral region 34. The following is an example of a region where the center of the coupling blind hole 331 can be disposed on the first surface 301, as shown in fig. 5 a. A perpendicular bisector perpendicular to the first center line A1 is defined as a first perpendicular bisector B1. A perpendicular bisector perpendicular to the second center line A2 is defined as a second perpendicular bisector B2. The first axis C1 is circumscribed with one side edge of the resonant blind hole 311 facing the resonant blind hole 317. The first axis C1 is perpendicular to the second perpendicular bisector B2. The second axis C2 is circumscribed with the resonant blind hole 317 towards one side of the resonant blind hole 311, and the second axis C2 is perpendicular to the second perpendicular bisector B2. The first axis C1, the second axis C2, the second perpendicular bisector B2, and the edge 305 corresponding to the blind coupling hole 331 define a region 40 (the shaded region 40 shown in fig. 5 a). The center of the blind coupling hole 331 can be located in the region 40, and the region 40 is located approximately between the second perpendicular bisector B2 and the corresponding edge 305 of the blind coupling hole 331.

As shown in fig. 6, in one possible configuration of the quad cell configuration, the center of the coupling via 3331, the center of the coupling via 3333, and the center of the coupling via 3335 are all located outside the inner perimeter region 34. The coupling blind hole 331 is centered outside the inner peripheral region 34. When the center of each coupling via 333 (including 3331, 3333, 3335) and the center of the coupling blind via 331 are offset to the outside of the inner peripheral region 34, the strength of the diagonal cross coupling between the first resonator 101 and the fourth resonator 104 is strong, and the strength of the diagonal cross coupling between the second resonator 102 and the third resonator 103 is strong.

As shown in fig. 7, in one possible configuration of the quad cell configuration, the center of coupling via 3331 and the center of coupling via 3333 are both located within inner perimeter region 34. The coupling via 3335 is centered outside the inner peripheral region 34. The coupling blind hole 331 is centered outside the inner peripheral region 34. The center of a portion of the coupling hole 33 of the combination of the three coupling through holes 333 (3331, 3333, 3335) and the blind coupling hole 331 is located outside the inner peripheral region 34, and the center of a portion of the coupling hole 33 is located inside the inner peripheral region 34, so that the strength of the diagonal cross-coupling between the first resonator 101 and the fourth resonator 104 is strong, and the strength of the diagonal cross-coupling between the second resonator 102 and the third resonator 103 is weak.

Referring to fig. 5 and 8 in combination, fig. 8 is a mathematical topology model corresponding to the dielectric filter shown in fig. 2, and the mathematical models of the four resonators are respectively represented as resonator node 1, resonator node 2, resonator node 3, and resonator node 4. The first resonator 101 is characterized as resonator node 1, the second resonator 102 is characterized as resonator node 2, the third resonator 103 is characterized as resonator node 3, and the fourth resonator 104 is characterized as resonator node 4. Wherein the input signal source is characterized as S and the output load is characterized as L. An input signal source S is signal connected to resonator node 1 and an output load L is signal connected to resonator node 4, such that the quad cell structure 30 forms a box quad cell.

A second central connection A2 between the center of the resonant blind hole 311 and the center of the resonant blind hole 315 corresponds to a coupling via 3331, the coupling via 3331 controlling the magnetic coupling M13. A third center connection A3 between the center of the resonant blind via 315 and the center of the resonant blind via 317 is provided with a coupling via 3333, and the coupling via 3333 controls the magnetic coupling M34. A fourth central connection A4 between the center of the resonant blind via 313 and the center of the resonant blind via 317 corresponds to the coupling via 3335, and the coupling via 3335 controls the magnetic coupling M24. Where M is a coupling coefficient, the coupling coefficient refers to the coupling strength between the resonator and the resonator, between the input signal source (also called excitation) and the resonator, and between the output load (also called output) and the resonator, for example, M13 refers to the coupling coefficient between the first resonator 101 (resonator node 1) and the third resonator 103 (resonator node 3). A second center connecting line A2 between the center of the resonant blind hole 311 and the center of the resonant blind hole 313 corresponds to the coupling blind hole 331, the center of the coupling blind hole 331 is located in the inner peripheral region 34, and the coupling blind hole 331 controls the dispersive capacitive coupling M12. The combination of the coupling via 333 and the coupling blind hole 331 can control the adjacent coupling M12, M13, M24, M34 and the equivalent diagonal cross-coupling M14 between the four resonators.

Due to the presence of both the equivalent diagonal cross-coupling M14 and the dispersive capacitive coupling M12, the quad-element structure 30 is able to generate two near-end transmission zeros Q1 and Q2 (as shown in fig. 9a, 9b, and 9 c). Fig. 9a, 9b and 9c are schematic diagrams illustrating four simulation results of the quad-cell structure 30. For example, in fig. 9a, the two near-end transmission zeros Q1 and Q2 are located in the low frequency band of the operating frequency band, and the suppression degree of the low frequency band of the operating frequency band is significantly higher than that of the high frequency band. As shown in fig. 9b, the two near-end transmission zeros Q1 and Q2 are located in the high frequency band of the operating frequency band, and the suppression degree of the high frequency band of the operating frequency band is obviously higher than that of the low frequency band. As shown in fig. 9c, the near-end transmission zero Q1 is located at the low frequency band of the working frequency band, and the near-end transmission zero Q2 is located at the high frequency band of the working frequency band.

Compared with the conventional box-type four-corner element which can only generate one near-end transmission zero point, the box-type four-corner element structure 30 provided by the first embodiment of the application increases 1 near-end transmission zero point, and further improves the design freedom degree of the suppression degree of the box-type four-corner element. In addition, when the box-type four-corner element is structurally designed, the box-type four-corner element with required performance can be obtained by designing the positions of the coupling holes on the structure of the four-corner element and the hole structure parameters of the coupling holes, and the design freedom of the inhibition degree of the box-type four-corner element is greatly improved.

It should be understood that the present application does not limit the input signal source 37 to be in signal connection with the first resonator 101, the input signal source 37 may be in signal connection with another resonator, the present application does not limit the output load 39 to be in signal connection with the third resonator 103, and the output load 39 may be in signal connection with another resonator.

It can be understood that four resonators in the four-corner element structure are distributed in a field shape, each resonator is arranged adjacent to the other two resonators, the four resonators form two groups of crossed resonator groups, and each group of crossed resonator groups comprises two resonators positioned on the same diagonal line of the four-corner element structure; two resonators in a cross-resonator group, one connected to an input signal source signal 37 and the other connected to an output load 39, form a box-type quad-element structure. That is, the resonator signal-connected to the input signal source 37 and the resonator signal-connected to the output load 39 are located on the same diagonal line of the four-corner element structure 30.

In some embodiments, two resonators of a group of adjacent resonators, one resonator in signal connection with the input signal source signal 37 and the other resonator in signal connection with the output load signal 39, form the quad configuration 30. It can be understood that four resonators in the four-corner element structure are distributed in a field shape, each resonator is arranged adjacent to the other two resonators, the four resonators form four groups of adjacent resonator groups, and each group of adjacent resonator groups comprises two resonators arranged in the same row or column; one of the two resonators of an adjacent resonator group is connected to an input signal source signal such that the quad cell structure forms a quad cell. That is, the resonator signal-connected to the input signal source 37 and the resonator signal-connected to the output load 39 are provided corresponding to the same edge of the four-corner element structure 30.

In some embodiments, all of the coupling holes 33 are coupling through holes, as shown in fig. 10, the coupling holes 33 penetrate through the first surface 301 and the second surface 303, the coupling through holes are used for controlling the magnetic coupling, and the perimeter of each coupling through hole is less than 1/2 of the side length of the corresponding edge 305. A coupling through hole 3331 is arranged between the resonance blind hole 311 and the resonance blind hole 313, a coupling through hole 3333 is arranged between the resonance blind hole 313 and the resonance blind hole 315, a coupling through hole 3335 is arranged between the resonance blind hole 315 and the resonance blind hole 317, and a coupling through hole 3337 is arranged between the resonance blind hole 317 and the resonance blind hole 311. One coupling via per edge 305.

It is to be understood that the shape of the resonant blind hole 31 is not limited in the present application, and may be, for example, a regular or irregular shape such as a square shape, an oval shape, etc.

A dielectric filter according to a second embodiment of the present application is different from the dielectric filter according to the first embodiment in that, referring to fig. 11, the number of coupling holes may be greater than four.

The number of the coupling holes is five, and the five coupling holes include a coupling blind hole 331 and four coupling through holes. The four coupling vias include coupling via 3331, coupling via 3333, coupling via 3335, and coupling via 3337.

The coupling blind hole 331 is located between the resonance blind hole 313 and the resonance blind hole 315. The coupling blind hole 331 is disposed corresponding to a second center connecting line A2 between the center of the resonant blind hole 313 and the center of the resonant blind hole 315. The coupling blind hole 331 is centered outside the inner peripheral region 34. Of the four coupling vias, three coupling vias have their centers located outside the inner peripheral region 34 and one coupling via has its center located inside the inner peripheral region 34. The coupling via 3331 is located between the resonant blind hole 311 and the resonant blind hole 313. The coupling through hole 3331 is disposed corresponding to a first center connecting line A1 between the center of the resonant blind hole 311 and the center of the resonant blind hole 313, and the center of the coupling through hole 3331 is located outside the inner peripheral region 34. The coupling via 3333 is located between the resonant blind via 315 and the resonant blind via 317. The coupling through hole 3333 is disposed corresponding to a third center connection line A3 between the center of the resonant blind via 315 and the center of the resonant blind via 317, and the center of the coupling through hole 3333 is located outside the inner peripheral region 34. The coupling via 3335 is located between the resonant blind via 311 and the resonant blind via 317, and the coupling via 3335 is located between the resonant blind via 311 and the resonant blind via 317. The coupling via 3335 and the coupling via 3337 are disposed corresponding to a fourth center connecting line A4 between the center of the resonant blind via 317 and the center of the resonant blind via 311, the center of the coupling via 3335 is located outside the inner peripheral region 34, and the center of the coupling via 3337 is located outside the inner peripheral region 34.

The resonant blind hole 311 forms a first resonator with its surrounding dielectric and metal surface, the resonant blind hole 313 forms a second resonator with its surrounding dielectric and metal surface, the resonant blind hole 315 forms a third resonator with its surrounding dielectric and metal surface, and the resonant blind hole 317 forms a fourth resonator with its surrounding dielectric and metal surface.

The input signal source 37 is signal connected to the first resonator and the output load 39 is signal connected to the fourth resonator, making the quad cell configuration 30 a quad cell. Referring to fig. 12, fig. 12 is a mathematical topology model corresponding to the dielectric filter shown in fig. 11. The mathematical models of the four resonators are characterized as resonator node 1, resonator node 2, resonator node 3, and resonator node 4. Where S in fig. 12 denotes an input signal source, and L in fig. 11 denotes an output load. The first resonator is characterized as resonator node 1, the second resonator is characterized as resonator node 2, the third resonator is characterized as resonator node 3, and the fourth resonator is characterized as resonator node 4.

The coupling through hole 3331 is disposed corresponding to a first center connecting line A1 between the center of the resonant blind hole 311 and the center of the resonant blind hole 313, and the coupling through hole 3331 controls the magnetic coupling M12. The coupling through hole 3333 is disposed corresponding to a third center connection A3 between the center of the resonant blind via 315 and the center of the resonant blind via 317, and the coupling through hole 3333 controls the magnetic coupling M34. The coupling via 3335 is located between the blind resonant via 311 and the blind resonant via 317, the coupling via 3337 is located between the blind resonant via 311 and the blind resonant via 317, and the coupling via 3335 and the coupling via 3337 can control the magnetic coupling M14. The coupling blind hole 331 is located between the resonant blind hole 313 and the resonant blind hole 315, and can control dispersive capacitive coupling M23. The combination of the coupling via and the coupling blind hole 331 can control the adjacent coupling between the respective adjacent resonators and the diagonal cross coupling between two resonators on the same diagonal of the respective quad cell structures. Because of the equivalent diagonal cross-coupling M13 and dispersive capacitive coupling M23, the symmetry of the two near-end transmission zeros (i.e., the relative positions of the two near-end transmission zeros) can be controlled by adjusting the physical parameters of each coupling hole in the simulation of the quadruple quad cell design, as shown in fig. 13a, 13b, and 13 c. Fig. 13a, 13b and 13c are schematic diagrams illustrating three simulation results of the quad-cell structure 30.

Referring to fig. 14, a third embodiment of the present application provides a bandpass 8 th-order dielectric filter 100, which includes a first quad-component structure 400 and a second quad-component structure 500. The first corner element structure 400 is cascaded with the second corner element structure 500. The first four corner element structure 400 is substantially the same as the first four corner element structure provided by the first embodiment. The second four corner element structure 500 is substantially the same as the first four corner element structure provided by the first embodiment.

The first corner device structure 400 and the second corner device structure 500 both include a first surface 301 and a second surface 303 disposed opposite to each other. The first surface 301 of the first four corner element structure 400 is on the same surface as the first surface 301 of the second four corner element structure 500. The second surface 303 of the first quad-component structure 400 is on the same surface as the second surface 303 of the second quad-component structure 500. The first surface 301 of the first quad-element structure 400 is provided with four resonant blind holes so that the first quad-element structure 400 forms four resonators. In the first quad cell structure 400, a coupling hole is disposed between every two adjacent resonant blind holes. The four coupling holes of the first quad cell structure 400 include a blind coupling hole 231 and three coupling through holes 211. The coupling blind hole 231 extends through the first surface 301 of the first quad element structure 400 but not through the second surface 303 of the first quad element structure 400. The coupling via 211 of the first quad-component structure 400 passes through the first surface 301 of the first quad-component structure 400 and the second surface 303 of the first quad-component structure 400.

The lines between the centers of the four resonant blind holes of the first quad-element structure 400 enclose an inner enclosure area 401. The centers of the four coupling holes of the first four corner element structure 400 are all located within the inner peripheral region 401. The four resonant blind holes comprise a resonant blind hole 2011, a resonant blind hole 2013, a resonant blind hole 2015 and a resonant blind hole 2017.

The blind resonance holes 2011 are adjacent to the blind resonance holes 2013 and are arranged side by side. The blind resonant via 2015 is adjacent to and juxtaposed with the blind resonant via 2017. The blind resonant via 2011 is adjacent to and juxtaposed with the blind resonant via 2015. The resonant blind hole 2013 and the resonant blind hole 2017 are arranged adjacently and in parallel. The coupling blind hole 231 is located between the resonant blind hole 2011 and the resonant blind hole 2015. The coupling blind hole 231 is disposed corresponding to a center line between the center of the resonant blind hole 2011 and the center of the resonant blind hole 2015. The blind resonant via 2011 and its surrounding dielectric and metal planes form a first resonator. The resonant blind hole 2013 and the resonator formed by the surrounding medium and the metal surface form a second resonator. The blind resonant via 2015 and its surrounding dielectric and metal plane form a third resonator. The resonant blind hole 2017 and the resonator formed by the surrounding medium and the metal surface form a fourth resonator. The first resonator is in signal connection with an input signal source 291 and the fourth resonator is in signal connection with an output load 292, the first quad-cell configuration 400 being a box quad-cell configuration.

The three coupling vias 211 include coupling via 2111, coupling via 2113, and coupling via 2115. The coupling via 2111 is located between the blind resonant hole 2011 and the blind resonant hole 2013. The coupling through hole 2113 is located between the blind resonance hole 2015 and the blind resonance hole 2017, and the coupling through hole 2115 is located between the blind resonance hole 2117 and the blind resonance hole 2113. The coupling through hole 2111 is arranged corresponding to a center connecting line between the center of the resonance blind hole 2011 and the center of the resonance blind hole 2013. The coupling through hole 2113 is disposed corresponding to a center connecting line between the center of the resonant blind hole 2015 and the center of the resonant blind hole 2017. The coupling through hole 2115 is located at a center connecting line between the center of the resonance blind hole 2117 and the center of the resonance blind hole 2113. The combination of the coupling vias and the coupling blind holes 331 of the first quad cell structure 400 enables control of the adjacent coupling and diagonal cross-coupling between the resonators of the first quad cell structure 400.

The first surface 301 of the second quad-element structure 500 is provided with four blind resonant holes so that the second quad-element structure 500 forms four resonators. A coupling hole is provided between every two adjacent resonant blind holes of the second quad-element structure 500. The four coupling holes of the second quad-component structure 500 include three coupling through holes 212 and one coupling blind hole 232. The coupling via 212 of the second quad-cell structure 500 passes through the first surface 301 of the second quad-cell structure 500 and the second surface 303 of the second quad-cell structure 500. The coupling blind via 232 extends through the first surface 301 of the second quad element structure 500 but not through the second surface 303 of the second quad element structure 500.

The center lines of the four resonant blind holes of the second quad-component structure 500 enclose an inner perimeter region 501. The four resonant blind holes of the second quad structure 500 include a resonant blind hole 2021, a resonant blind hole 2023, a resonant blind hole 2025, and a resonant blind hole 2027. The resonant blind hole 2021 and the resonant blind hole 2023 are disposed adjacent to each other and in parallel. The resonant blind holes 2021 are adjacent to and arranged side by side with the resonant blind holes 2025. The resonant blind hole 2025 and the resonant blind hole 2027 are disposed adjacent to each other and in parallel. The resonant blind holes 2023 are adjacent to and arranged side by side with the resonant blind holes 2027. The resonant blind hole 2021 and its surrounding medium form a fifth resonator. The resonator formed by the blind resonant hole 2023 and its surrounding dielectric and metal plane forms a sixth resonator. The resonant blind hole 2025 and its surrounding dielectric and metal plane form a seventh resonator. The resonant blind hole 2027 and its surrounding dielectric and metal plane form an eighth resonator. The fifth resonator is in signal connection with the input signal source S, the eighth resonator is in signal connection with the output load 292, and the second quad-component structure 500 is a box quad-component structure.

The coupling blind hole 232 is located between the resonance blind hole 2025 and the resonance blind hole 2027, the coupling blind hole 232 is disposed corresponding to a center connection line between the center of the resonance blind hole 2025 and the center of the resonance blind hole 2027, and the center of the coupling blind hole 232 is located in the inner peripheral region 501. The three coupling vias 212 include a coupling via 2121, a coupling via 2123, and a coupling via 2125. The coupling through hole 2121 is located between the resonant blind hole 2021 and the resonant blind hole 2023. The coupling through hole 2121 is disposed corresponding to a center connecting line between the center of the resonant blind via 2021 and the center of the resonant blind via 2023. The coupling via 2121 is centered within the inner peripheral region 501. The coupling through hole 2123 is located between the resonant blind via 2021 and the resonant blind via 2025. The coupling through hole 2123 is disposed corresponding to a center connecting line between the center of the resonant blind via 2021 and the center of the resonant blind via 2025. The coupling via 2123 is centered within the inner peripheral region 501. The coupling through hole 2125 is located between the resonant blind hole 2123 and the resonant blind hole 2127. The coupling through hole 2125 is disposed corresponding to a center connecting line between the center of the resonant blind via 2023 and the center of the resonant blind via 2027. The coupling via 2125 is centered within the inner peripheral region 501. The combination of the coupling via 333 and the coupling blind hole 331 enables control of the adjacent coupling and diagonal cross-coupling between the resonators of the second quad element structure 500.

The dielectric filter 100 further comprises a spacing through-slot 250 for spacing the first corner element structure 400 from the second corner element structure 500. The first four corner element structure 400 is located on one side of the spaced apart channel 250 and the second four corner element structure 500 is located on the other side of the spaced apart channel 250. In this embodiment, the partition through-groove 250 is located on the boundary edge of the first surface 301 of the first four-corner element structure 400 and the first surface 301 of the second four-corner element structure 500.

Referring to fig. 15, the four resonant blind holes of the first quad-component structure 400 are arranged in a "tian" shape or an approximate "tian" shape to implement four quasi-TEM mode resonators of the first quad-component structure 400. The four resonators formed by the second quad cell structure 500 may be characterized as four resonator nodes, respectively: resonator node 1, resonator node 2, resonator node 3, and resonator node 4. The first resonator may be characterized as resonator node 1. The second resonator may be characterized as resonator node 2. The third resonator may be characterized as resonator node 3. The fourth resonator may be characterized as resonator node 4.

The four resonant blind holes of the second quad-component structure 500 are arranged in a matrix or approximately matrix to realize four quasi-TEM mode resonators of the second quad-component structure 500. The four resonators of the second quad cell structure 500 are characterized as resonator node 5, resonator node 6, resonator node 7, and resonator node 8, respectively. The fifth resonator may be characterized as resonator node 5. The sixth resonator may be characterized as resonator node 6. The seventh resonator may be characterized as resonator node 7. The eighth resonator may be characterized as a resonator node 8.

Input signal source 291 is characterized as input signal source S. The output load 292 is characterized as output load L. The resonator node 1 is signal-connected to an input signal source S. The resonator node 4 is signal connected to an output load L. The resonator node 6 is signal connected to an input signal source S. The resonator node 8 is signal connected to an output load L.

More specifically, the coupling through hole 2111 is disposed corresponding to a central connecting line between the center of the blind resonant hole 2011 and the center of the blind resonant hole 2013, the coupling through hole 2113 is disposed corresponding to a central connecting line between the center of the blind resonant hole 2015 and the center of the blind resonant hole 2017, the coupling through hole 2115 is disposed between the center of the blind resonant hole 2117 and the center of the blind resonant hole 2113, and the coupling through hole 2111, the coupling through hole 2113 and the coupling through hole 2115 control the magnetic couplings M12, M34 and M24. The coupling blind hole 231 is disposed corresponding to a center connecting line between the center of the resonant blind hole 2011 and the center of the resonant blind hole 2015, and the coupling blind hole 231 can control the chromatic dispersion capacitive coupling M13. The coupling via 211 and the coupling blind hole 231 in combination enable control of the adjacent couplings M12, M34, M24, M13 and the equivalent diagonal coupling M14 between the four resonators of the first quad element structure 400. Because the first quad-element structure 400 presents the equivalent diagonal cross-coupling M14 and dispersive capacitive coupling M13, the first quad-element structure 400 can add 1 near-end transmission zero, i.e., create two near-end transmission zeros (such as near-end transmission zeros fz1 and fz2 shown in fig. 16).

The coupling through hole 2121 is arranged corresponding to a center connecting line between the center of the resonant blind hole 2021 and the center of the resonant blind hole 2023, the coupling through hole 2123 is arranged corresponding to a center connecting line between the center of the resonant blind hole 2021 and the center of the resonant blind hole 2025, the coupling through hole 2125 is arranged corresponding to a center connecting line between the center of the resonant blind hole 2023 and the center of the resonant blind hole 2027, and the coupling through hole 2121, the coupling through hole 2123 and the coupling through hole 2125 control the magnetic couplings M56, M57 and M68. The coupling blind hole 232 is disposed corresponding to a center line between the center of the resonant blind hole 2025 and the center of the resonant blind hole 2027, and can control the dispersive capacitive coupling M78. The coupling via 212 and the coupling blind via 232 in combination enable control of the adjacent couplings M56, M57, M78, M68 and the equivalent diagonal coupling M58 between the four resonators of the second tetragonal element structure 500. Because the equivalent diagonal cross-coupling M58 and dispersive capacitive coupling M78 exist for the second quad element structure 500, the second quad element structure 500 can add 1 near-end transmission zero, i.e., create two near-end transmission zeros (fz 3 and fz4 as shown in fig. 16).

In summary, the band-pass 8-order dielectric filter 100 provided by the third embodiment can generate four near-end transmission zeros, and two near-end transmission zeros are added compared with the existing band-pass 8-order dielectric filter, so that the suppression degree of the dielectric filter 100 can be increased, and the performance of the dielectric filter 100 is greatly optimized. Higher suppression means that the dielectric filter has better out-of-band interference suppression capability.

Referring to fig. 17, a dielectric filter 100 according to a fourth embodiment of the present invention includes a first quad-cell structure 400 and a second quad-cell structure 500. The first quad-element structure 400 is cascaded with the second quad-element structure 500.

The first corner device structure 400 and the second corner device structure 500 both include a first surface 301 and a second surface 303 that are opposite to each other. The first surface 301 of the first quad-component structure 400 is provided with four blind resonant holes and five coupling holes. A coupling hole is provided between every two adjacent resonant blind holes in the first quad-element structure 400. The five coupling holes of the first quad-component structure 400 include a blind coupling hole 331 and four coupling through holes. The blind coupling hole 331 extends through the first surface 301 of the first quad-component structure 400 but does not extend through the second surface 303 of the first quad-component structure 400. The coupling vias of the first quad-component structure 400 extend through the first surface 301 and the second surface 303.

The connecting lines between the centers of four adjacent resonant blind holes of the first quad-element structure 400 connect to form an inner enclosure area 401. The four resonant blind holes of the first quad-component structure 400 include a resonant blind hole 3011, a resonant blind hole 3013, a resonant blind hole 3015, and a resonant blind hole 3017. The resonance blind hole 3011 is adjacent to and juxtaposed with the resonance blind hole 3013. The resonant blind holes 3015 are adjacent to and side-by-side with the resonant blind holes 3015. The resonance blind hole 3011 and the resonance blind hole 3017 are arranged side by side. The resonance blind hole 3013 is adjacent to the resonance blind hole 3015 and is arranged side by side. The resonant blind via 3011 and its surrounding dielectric and metal plane form a first resonator. The resonator formed by the resonant blind hole 3013 and the surrounding medium and metal surface thereof forms a second resonator. The resonant blind via 3015 and its surrounding dielectric and metal plane form a third resonator. The resonator formed by the resonance blind hole 3017 and the surrounding dielectric and metal surface forms a fourth resonator. The first resonator is in signal connection with an input signal source 391, the fourth resonator is in signal connection with an output load 392, and the first quad cell configuration 400 is a quad cell configuration.

The four coupling vias of the first quad cell structure 400 include coupling via 3111, coupling via 3113, coupling via 3115, and coupling via 3117. Coupling through-hole 3111 is located between resonance blind hole 3011 and resonance blind hole 3013, and coupling through-hole 3111 corresponds the central line setting between the center of resonance blind hole 3011 and the center of resonance blind hole 3013, and coupling through-hole 3111 is located outside inner surrounding area 401. Coupling through-hole 3113 is located between resonance blind hole 3015 and resonance blind hole 3017, and coupling through-hole 3113 corresponds the central line setting between the center of resonance blind hole 3015 and the center of resonance blind hole 3017, and coupling through-hole 3113 is located outside inner surrounding area 401. Coupling through-hole 3115 is located between resonance blind hole 3011 and resonance blind hole 3017, and coupling through-hole 3115 corresponds the central line setting between the center of resonance blind hole 3011 and the center of resonance blind hole 3017, and coupling through-hole 3115 is located in inner surrounding area 401. Coupling through-hole 3117 is located between resonance blind hole 3011 and resonance blind hole 3017, and coupling through-hole 3117 is located outside inner region 401 corresponding to the central connecting line setting between the center of resonance blind hole 3011 and the center of resonance blind hole 3017. The coupling blind hole 331 is disposed corresponding to a center connecting line between the center of the resonance blind hole 3013 and the center of the resonance blind hole 3015, and the center of the coupling blind hole 331 is located outside the inner peripheral region 401.

The first surface 301 of the second quad-element structure 500 is provided with four blind resonant holes and five coupling holes. A coupling hole is provided between every two adjacent resonant blind holes of the second quad-component structure 500. The five coupling holes of the second quad-component structure 500 include a blind coupling hole 332 and four coupling through holes. The blind coupling hole 332 extends through the first surface 301 but not through the second surface 303 of the second quad-element structure 500. The coupling via of the second quad-component structure 500 passes through the first surface 301 of the second quad-component structure 500 and the second surface 303 of the second quad-component structure 500.

The connecting lines between the centers of four adjacent resonant blind holes of the second quad-component structure 500 are connected to enclose an inner enclosure area 501. The four resonant blind holes of the second quad-component structure 500 include a resonant blind hole 3021, a resonant blind hole 3023, a resonant blind hole 3025, and a resonant blind hole 3027. The blind resonant hole 3021 is adjacent to and juxtaposed with the blind resonant hole 3023. The blind

resonant holes

3021 and 3027 are arranged adjacent to each other and side by side. The resonant blind hole 3025 is arranged adjacent to and in parallel with the resonant blind hole 3027. The blind

resonant holes

3023 and 3025 are disposed adjacent to each other and side by side. The blind resonant hole 3021 and its surrounding dielectric and metal planes form a fifth resonator. The resonant blind hole 3023 and the resonator formed by the surrounding dielectric and metal surfaces thereof form a sixth resonator. The blind resonant hole 3025 and its surrounding dielectric and metal plane form a seventh resonator. The blind resonant via 3027 and its surrounding dielectric and metal planes form an eighth resonator. The fifth resonator is in signal connection with an input signal source 391, the eighth resonator is in signal connection with an output load 392, and the second quad cell configuration 500 is a quad cell configuration.

The four coupling vias 312 include a coupling via 3121, a coupling via 3123, a coupling via 3125, and a coupling via 3127. The coupling through hole 3121 is located between the resonant blind via 3021 and the resonant blind via 3023, the coupling through hole 3121 is disposed corresponding to a center connection line between a center of the resonant blind via 3021 and a center of the resonant blind via 3023, and a center of the coupling through hole 3123 is located outside the inner peripheral region 501. The coupling through hole 3123 is located between the resonant blind via 3025 and the resonant blind via 3027, the coupling through hole 3123 is disposed corresponding to a center connection line between the center of the resonant blind via 3025 and the center of the resonant blind via 3027, and the center of the coupling through hole 3123 is located outside the inner peripheral region 501. The coupling through hole 3125 is located between the resonant

blind holes

3021 and 3027, the coupling through hole 3125 is disposed corresponding to a center connection line between the center of the resonant blind hole 3021 and the center of the resonant blind hole 3027, and the center of the coupling through hole 3125 is located in the inner peripheral region 501. The coupling through hole 3127 is located between the resonant

blind holes

3021 and 3027, the coupling through hole 3127 is disposed corresponding to a center connection line between the center of the resonant blind hole 3021 and the center of the resonant blind hole 3027, and the center of the coupling through hole 3127 is located outside the inner peripheral region 501. The coupling blind hole 332 is located between the resonant

blind holes

3023 and 3025, the coupling blind hole 332 is disposed corresponding to a center connection line between the center of the resonant blind hole 3023 and the center of the resonant blind hole 3025, and the center of the coupling blind hole 332 is located outside the inner peripheral region 501.

Referring to fig. 18, the four resonant blind holes of the first quad-component structure 400 are arranged in a "tian" shape or an approximate "tian" shape, so that the first quad-component structure 400 forms four quasi-TEM mode resonators. The four mode resonators of the first quad-element structure 400 may be characterized as four resonator nodes: resonator node 1, resonator node 2, resonator node 3, and resonator node 4. The first resonator may be characterized as resonator node 1. The second resonator may be characterized as resonator node 2. The third resonator may be characterized as resonator node 3. The fourth resonator may be characterized as resonator node 4.

The four resonant blind holes 302 of the second quad-component structure 500 are arranged in a "tian" shape or an approximate "tian" shape, so that the second quad-component structure 500 forms four quasi-TEM mode resonators. The four quasi-TEM mode resonators of the second quad-element structure 500 may be characterized as four resonator nodes: resonator node 5, resonator node 6, resonator node 7, and resonator node 8. The fifth resonator may be characterized as resonator node 5. The sixth resonator may be characterized as resonator node 6. The seventh resonator may be characterized as resonator node 7. The eighth resonator may be characterized as resonator node 8.

Input signal source 392 is characterized as input signal source S. Output load 392 is characterized as output load L. The resonator node 1 is signal-connected to an input signal source S. The resonator node 4 is signal connected to an output load L. The resonator node 5 is signal connected to an input signal source S. The resonator node 8 is signal connected to an output load L.

The coupling through hole 3111 is arranged corresponding to a center connecting line between the center of the resonance blind hole 3011 and the center of the resonance blind hole 3013, the coupling through hole 3113 is arranged corresponding to a center connecting line between the center of the resonance blind hole 3015 and the center of the resonance blind hole 3017, the coupling through hole 3115 is arranged corresponding to a center connecting line between the center of the resonance blind hole 3011 and the center of the resonance blind hole 3017, and the coupling through hole 3117 is arranged corresponding to a center connecting line between the center of the resonance blind hole 3011 and the center of the resonance blind hole 3017, so that magnetism M12, M34 and coupling M14 can be controlled. The coupling blind hole 331 is disposed corresponding to a center connecting line between the center of the resonant blind hole 3013 and the center of the resonant blind hole 3015, and can control the dispersive capacitive coupling M23.

The coupling via 311 and the coupling blind hole 331 in combination enable control of the adjacent couplings M12, M14, M23, M34 and the equivalent diagonal cross-coupling M13 between the four resonators of the first quad element structure 400. Because the first quad-element structure 400 presents the equivalent diagonal cross-coupling M13 and dispersive capacitive coupling M23, the physical parameters of each coupling hole of the first quad-element structure 400 are modeled to adjust the symmetry of the two near-end transmission zeros (fz 2 and fz3 as shown in fig. 19), i.e., to design the relative positions of the two near-end transmission zeros.

The coupling through hole 3121 is disposed corresponding to a center connecting line between the center of the resonant blind hole 3021 and the center of the resonant blind hole 3023, the coupling through hole 3123 is disposed corresponding to a center connecting line between the center of the resonant blind hole 3025 and the center of the resonant blind hole 3027, the coupling through hole 3125 is disposed corresponding to a center connecting line between the center of the resonant blind hole 3021 and the center of the resonant blind hole 3027, and the magnetic coupling M56, M78, and M56 can be controlled.

The coupling blind hole 332 is arranged corresponding to a central connecting line between the center of the resonant blind hole 3023 and the center of the resonant blind hole 3025, and controls the dispersive capacitive coupling M67. The coupling vias 312 and the coupling blind vias 332 in combination enable control of the adjacent couplings M56, M67, M58, M78 and the equivalent diagonal cross-coupling M68 between the four resonators of the second quad element structure 500. Because the second quad-element structure 500 presents the equivalent diagonal cross-coupling M68 and dispersive capacitive coupling M67, the physical parameters of each coupling aperture of the second quad-element structure 500 are modeled to adjust the symmetry of the two near-end transmission zeros (fz 1 and fz4 as shown in fig. 19), i.e., to design the relative positions of the two near-end transmission zeros.

It should be understood that expressions such as "include" and "may include" that may be used in the present application indicate the presence of the disclosed functions, operations or constituent elements, and do not limit one or more additional functions, operations and constituent elements. In the present application, terms such as "including" and/or "having" may be interpreted as indicating specific characteristics, numbers, operations, constituents, elements, or combinations thereof, but may not be interpreted as excluding the existence or addition possibility of one or more other characteristics, numbers, operations, constituents, elements, or combinations thereof.

Further, in this application, the expression "and/or" includes any and all combinations of the associated listed words. For example, the expression "a and/or B" may include a, may include B, or may include both a and B.

In the present application, expressions including ordinal numbers such as "first" and "second" and the like may modify the respective elements. However, such elements are not limited by the above expression. For example, the above description does not limit the order and/or importance of the elements. The above expressions are only used to distinguish one element from another. For example, the first user equipment and the second user equipment indicate different user equipments, although both the first user equipment and the second user equipment are user equipments. Similarly, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present application.

When a component is referred to as being "connected" or "accessed" to another component, it is understood that: not only does this component connect or tap directly to the other components, but there may also be another component between this component and the other components. On the other hand, when components are referred to as being "directly connected" or "directly accessing" other components, it should be understood that no components exist therebetween.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A four-corner element structure is characterized by comprising a first surface and a second surface which are arranged in a back-to-back mode, wherein the first surface comprises four edges, and four resonance blind holes and at least four coupling holes are formed in the first surface; each resonance blind hole is correspondingly positioned in one angular direction of the four-corner element structure so as to form four resonators of the four-corner element structure; a central connecting line between the centers of the resonant blind holes in every two adjacent angular directions corresponds to at least one coupling hole; the coupling hole comprises a coupling blind hole and/or a coupling through hole, wherein the coupling blind hole penetrates through the first surface, the coupling through hole penetrates through the first surface and the second surface, and the perimeter of the coupling through hole is smaller than 1/2 of the side length of any one edge.

2. The quadrilateral component structure of claim 1 wherein centers of the four resonant blind holes are connected to define an inner area, and a center of at least one of the four coupling holes is located within the inner area.

3. The quadrilateral element structure of claim 1, wherein centers of the four resonant blind holes are connected to define an inner peripheral area, and a center of at least one of the four coupling holes is located outside the inner peripheral area.

4. The quadrilateral element structure of any one of claims 1 to 3, wherein one of the at least four coupling holes is a blind coupling hole.

5. The quadrilateral element structure of any one of claims 1 to 4, wherein the depth of the coupling blind hole is greater than the depth of the resonant blind hole.

6. The quadrilateral element structure of any one of claims 1 to 5, wherein all the coupling holes are coupling through holes.

7. The quadrilateral element structure of any one of claims 1 to 6, wherein the coupling aperture has a shape of one of a circle, an ellipse and a square.

8. A dielectric filter comprising the quad cell structure of any one of claims 1-7, an input signal source, and an output load; the input signal source is connected with one of the four resonators, and the output load is connected with the other of the four resonators.

9. The dielectric filter of claim 8, wherein the resonator connected to the input signal source signal and the resonator connected to the output load signal are disposed at the same edge of the quad cell structure.

10. The dielectric filter of claim 8, wherein the resonator connected to the input signal source signal and the resonator connected to the output load signal are located on a same diagonal of the quad cell structure.

11. The dielectric filter of claim 8, wherein the number of the four corner element structures is at least two, the dielectric filter further comprising at least one spacing channel running through the first and second surfaces, one spacing channel being provided between each adjacent two of the four corner element structures.

12. A base station device, characterized in that it comprises a dielectric filter according to any of claims 8-11 and an antenna, said dielectric filter being signal connected to said antenna.