CN115522244B - Preparation method of high-safety sodium storage material based on antimony-bismuth nano array - Google Patents
Preparation method of high-safety sodium storage material based on antimony-bismuth nano array Download PDFInfo
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title claims abstract description 16
- 229910052708 sodium Inorganic materials 0.000 title claims abstract description 16
- 239000011734 sodium Substances 0.000 title claims abstract description 16
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 239000011232 storage material Substances 0.000 title claims abstract description 7
- 238000002360 preparation method Methods 0.000 title abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910001415 sodium ion Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- MCAHWIHFGHIESP-UHFFFAOYSA-N selenous acid Chemical group O[Se](O)=O MCAHWIHFGHIESP-UHFFFAOYSA-N 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 3
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical group Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical group Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims description 3
- HCFPRFJJTHMING-UHFFFAOYSA-N ethane-1,2-diamine;hydron;chloride Chemical compound [Cl-].NCC[NH3+] HCFPRFJJTHMING-UHFFFAOYSA-N 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 2
- 150000001462 antimony Chemical class 0.000 claims 2
- 150000001621 bismuth Chemical class 0.000 claims 2
- 239000011669 selenium Substances 0.000 claims 2
- 229940000207 selenious acid Drugs 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 13
- 239000007773 negative electrode material Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 229910018289 SbBi Inorganic materials 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 4
- 238000004070 electrodeposition Methods 0.000 abstract description 3
- 150000003346 selenoethers Chemical class 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 240000007594 Oryza sativa Species 0.000 abstract 1
- 235000007164 Oryza sativa Nutrition 0.000 abstract 1
- 235000009566 rice Nutrition 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 16
- 239000003792 electrolyte Substances 0.000 description 12
- 229910052787 antimony Inorganic materials 0.000 description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 238000001000 micrograph Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- HRHNTXINGYOSQR-UHFFFAOYSA-N [Bi]=[Se].[Sb] Chemical compound [Bi]=[Se].[Sb] HRHNTXINGYOSQR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 239000006258 conductive agent Substances 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- CUNAJIREFWUWGY-UHFFFAOYSA-N [Sb].[C] Chemical compound [Sb].[C] CUNAJIREFWUWGY-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 antimony bismuth-bismuth selenide-selenide Chemical compound 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- GNZJTRGEKSBAAS-UHFFFAOYSA-N selanylideneantimony;selenium Chemical compound [Se].[Sb]=[Se].[Sb]=[Se] GNZJTRGEKSBAAS-UHFFFAOYSA-N 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y40/00—Manufacture or treatment of nanostructures
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
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- H01M10/054—Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
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- H01M4/36—Selection of substances as active materials, active masses, active liquids
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
Description
技术领域Technical Field
本发明属于钠离子电池负极材料制备及其在电池应用的新型化学电源领域,具体涉及一种基于锑-铋纳米阵列的高安全储钠材料制备方法。The present invention belongs to the field of preparation of negative electrode materials for sodium ion batteries and novel chemical power sources for battery applications, and specifically relates to a method for preparing a highly safe sodium storage material based on an antimony-bismuth nanoarray.
背景技术Background technique
随着我国应对气候变化的双碳目标(碳达峰与碳中和)提出,寻求可再生绿色清洁能源就显得愈发重要。锂离子电池被认为是当下最成功的能源存储设备之一, 由于近年来的需求量不断增多,带来了锂资源枯竭的问题,所以寻找储量更为丰富,价格低廉,并且与锂离子电池具有相似工作原理的可替代储能电池体系成为了一个亟待解决的问题,而钠离子成为了一个潜在的选择。尽管钠离子具有成本和资源优势,但由于自身较大的离子半径和较高的电势使得它的实际应用还面临着很多挑战,其中一个关键则是缺乏高容量、高稳定性的负极材料。As my country proposes its dual carbon goals (carbon peak and carbon neutrality) to address climate change, it becomes increasingly important to seek renewable green and clean energy. Lithium-ion batteries are considered one of the most successful energy storage devices at present. Due to the increasing demand in recent years, the problem of lithium resource depletion has arisen. Therefore, it has become an urgent issue to find an alternative energy storage battery system with more abundant reserves, lower prices, and similar working principles to lithium-ion batteries, and sodium ions have become a potential choice. Although sodium ions have cost and resource advantages, their practical application still faces many challenges due to their large ion radius and high potential. One of the key challenges is the lack of high-capacity and high-stability negative electrode materials.
在众多的负极材料中,合金化储钠机理的材料,如锑基类(Sb: 660 mAh g-1,Sb2Se3: 670 mAh g-1)因具有较高的理论容量和合适的储钠电位(~0.4 V)而备受关注。然而,由于多电子转移的合金化/脱合金化反应机理,锑材料在充放电过程中体积变化严重(~390%),极易产生较大的结构应力引起活性材料的粉化脱落并与集流体失去电接触,造成电极材料失活。另外,粉化会暴露更多活性界面并引起SEI膜持续形成,进而消耗钠离子并降低循环性能。Among the numerous negative electrode materials, materials with alloying sodium storage mechanism, such as antimony-based materials (Sb: 660 mAh g -1 , Sb2Se3 : 670 mAh g -1 ), have attracted much attention due to their high theoretical capacity and suitable sodium storage potential (~0.4 V). However, due to the alloying/de-alloying reaction mechanism of multi-electron transfer, the volume of antimony materials changes severely (~390%) during the charge and discharge process, which easily generates large structural stress, causing the active materials to pulverize and fall off and lose electrical contact with the current collector, resulting in the inactivation of the electrode materials. In addition, pulverization will expose more active interfaces and cause the continuous formation of SEI film, which will consume sodium ions and reduce the cycle performance.
常规缓解锑基材料储钠过程中的体积膨胀并提高循环稳定性的方法是将锑与导电碳复合,但是该方法过程复杂 ,而且容量性能不佳。如中国专利 (申 请 号 :201911110217.7) 制备了一种氮掺杂锑碳复合材料,在0.5 A mg-1的电流下循环100次之后只有325 mAh g-1的放电容量。除了与碳材料复合,与其它元素组合二元合金也是提高锑基材料稳定性的方法之一 。第二金属的引入可以作为缓冲层,减轻电极循环过程中的体积变化。比如中国专利 (CN201611002285.8) 引入了非活性的Cu与锑形成二元合金,于一种铜箔表面原位生成无粘结的锑化二铜。虽然该材料在100次循环后没有明显的衰减,但是其可逆容量较低。中国专利 (CN201680005500.1) 公开了一种用于可再充电的钠离子电池组的铋-锑负极,其首次去钠化容量为428 mAh g-1,50圈循环后容量衰减至113 mAh g-1,稳定性能表现的不佳。The conventional method to alleviate the volume expansion of antimony-based materials during sodium storage and improve the cycle stability is to compound antimony with conductive carbon, but this method is complicated and has poor capacity performance. For example, the Chinese patent (application number: 201911110217.7) prepared a nitrogen-doped antimony-carbon composite material with a discharge capacity of only 325 mAh g -1 after 100 cycles at a current of 0.5 A mg -1 . In addition to compounding with carbon materials, combining binary alloys with other elements is also one of the methods to improve the stability of antimony-based materials. The introduction of a second metal can serve as a buffer layer to reduce the volume change during the electrode cycle. For example, the Chinese patent (CN201611002285.8) introduced inactive Cu to form a binary alloy with antimony, and in situ generated unbonded antimonide copper on the surface of a copper foil. Although the material did not show obvious attenuation after 100 cycles, its reversible capacity was low. A Chinese patent (CN201680005500.1) discloses a bismuth-antimony negative electrode for a rechargeable sodium-ion battery pack, whose first de-sodiumization capacity is 428 mAh g -1 , and the capacity decays to 113 mAh g -1 after 50 cycles, and the stability performance is poor.
发明内容Summary of the invention
本发明的目的在于解决现有负极材料无法兼顾高容量和长循环稳定性的实际问题。The purpose of the present invention is to solve the practical problem that existing negative electrode materials cannot achieve both high capacity and long cycle stability.
为了解决上述技术问题,本发明采用以下技术手段:In order to solve the above technical problems, the present invention adopts the following technical means:
基于锑/铋自支撑纳米阵列的制备方法,包括以下步骤:The preparation method based on antimony/bismuth self-supporting nanoarray comprises the following steps:
步骤1:将铜片依次放入酒精,稀草酸,去离子水,再酒精中超声,干燥待用;Step 1: Place the copper sheet in alcohol, dilute oxalic acid, and deionized water in turn, then ultrasonicate in alcohol and dry for later use;
步骤2:将20 mL水,30 mL酒精和50 mL乙二醇混合。随后加入氯化锑 (SbCl3)0.025mol/L,氯化铋 (BiCl3) 0.02 mol/L,亚硒酸 (H2SeO3) 0.005-0.015 mol/L和盐酸乙二胺 (C2H9ClN2) 0.28mol/L,将溶液在磁力搅拌台上充分搅拌,作为溶液A;Step 2: Mix 20 mL of water, 30 mL of alcohol and 50 mL of ethylene glycol. Then add 0.025 mol/L of antimony chloride (SbCl 3 ), 0.02 mol/L of bismuth chloride (BiCl 3 ), 0.005-0.015 mol/L of selenious acid (H 2 SeO 3 ) and 0.28 mol/L of ethylenediamine hydrochloride (C 2 H 9 ClN 2 ), and stir the solution thoroughly on a magnetic stirring table to obtain solution A.
步骤3:将干燥好的铜片作为工作电极,放入三电极体系的电解池中,并加入步骤2所配好的溶液A,在恒定电流4-8 mA cm-2条件下反应20分钟。沉积完成后取出,用去离子水和酒精进一步清洗得到具有锑铋合金、硒化锑/铋自支撑纳米阵列;Step 3: Place the dried copper sheet as the working electrode in the electrolytic cell of the three-electrode system, add the solution A prepared in step 2, and react for 20 minutes at a constant current of 4-8 mA cm -2 . After the deposition is completed, take it out and further wash it with deionized water and alcohol to obtain a self-supporting nanoarray with antimony-bismuth alloy and antimony selenide/bismuth;
步骤4:将步骤3沉积有反应物的铜片放入管式炉中进行温和的热处理,在200 ºC下保持1h退火,得到最终复合纳米阵列产物,所述复合纳米阵列最优产物为均匀异质界面分布的稻穗状纳米墙阵列结构SbBi-Bi2Se3-Sb2Se3(SbBi-Se);Step 4: placing the copper sheet deposited with the reactants in step 3 into a tube furnace for mild heat treatment, and annealing at 200°C for 1 hour to obtain the final composite nanoarray product, wherein the optimal composite nanoarray product is a rice-ear-shaped nanowall array structure SbBi-Bi 2 Se 3 -Sb 2 Se 3 (SbBi-Se) with uniform heterogeneous interface distribution;
本发明同时提供了硒化锑/铋自支撑纳米阵列的应用,将锑铋合金、硒化锑/铋的复合材料自支撑纳米阵列用作钠离子电池负极组装成纽扣电池,同时在装纽扣电池的时候引入温度传感器进行温度检测。The present invention also provides an application of an antimony bismuth selenide/bismuth self-supporting nanoarray, wherein an antimony bismuth alloy and an antimony bismuth selenide/bismuth composite material self-supporting nanoarray is used as a negative electrode of a sodium ion battery to be assembled into a button battery, and a temperature sensor is introduced to detect temperature when assembling the button battery.
所述二次电池的制备方法,包含以下步骤:The method for preparing the secondary battery comprises the following steps:
步骤1:组装纽扣电池:依次负极盖,弹片,垫片,金属钠片,隔膜,电解液,阵列电极,温度传感器,正极盖进行组装。所述封口压力为40-60 kgf cm-2, 压实时间为:5-10 s。Step 1: Assemble button cell: assemble the negative electrode cover, spring, gasket, metal sodium sheet, diaphragm, electrolyte, array electrode, temperature sensor, and positive electrode cover in sequence. The sealing pressure is 40-60 kgf cm -2 , and the compaction time is 5-10 s.
在电沉积的过程中由于 Sb、Bi 和 Se 源是同时加入电解液中进行共沉积,因此所得最优样品由分布均匀的 SbBi、Bi2Se3和 Sb2Se3三种物相组成。同时,三种物相之间存在大量的异质界面,能够将这些界面的优势最大化,起到增强钠离子、电子传输效率,并保持电极结构稳定性的目的。此外,由于阵列电极具有三维纳米墙的结构,不仅可以缓冲充放电过程中的体积膨胀,同时在电极制备时无需导电剂与粘结剂的使用,简化了电池组装流程,避免了非活性物质的引入,提高了电极的能量密度,是一种具有应用潜力的钠离子电池负极材料。In the process of electrodeposition , since Sb, Bi and Se sources are added to the electrolyte at the same time for co-deposition, the optimal sample obtained is composed of three phases of evenly distributed SbBi, Bi2Se3 and Sb2Se3 . At the same time, there are a large number of heterogeneous interfaces between the three phases, which can maximize the advantages of these interfaces, enhance the efficiency of sodium ion and electron transmission, and maintain the stability of the electrode structure. In addition, since the array electrode has a three-dimensional nanowall structure, it can not only buffer the volume expansion during the charge and discharge process, but also eliminate the need for the use of conductive agents and binders during electrode preparation, simplifying the battery assembly process, avoiding the introduction of inactive substances, and improving the energy density of the electrode. It is a sodium ion battery negative electrode material with application potential.
综上所述,由于采用了上述技术方案,本发明至少具有以下优点:In summary, due to the adoption of the above technical solution, the present invention has at least the following advantages:
本发明采用恒流电沉积技术在铜基底上直接生长具有锑铋(SbBi)合金、硒化铋(Bi2Se3)、以及硒化锑(Sb2Se3)复合材料的纳米阵列结构。通过将对应的高容量硒化物引入到SbBi 合金中,可以为电极提供较高的容量。同时,利用硒化物与合金之间的异质界面,诱导产生内建电场,提高电荷与电子的传输效率,增强材料的结构稳定性。利用植入式温度传感器对电极进行实时检测,发现其具有稳定的工作温度以及较小的温度波动,体现了较高的安全性。The present invention uses constant current electrodeposition technology to directly grow a nano-array structure having a composite material of antimony bismuth (SbBi) alloy, bismuth selenide (Bi 2 Se 3 ), and antimony selenide (Sb 2 Se 3 ) on a copper substrate. By introducing the corresponding high-capacity selenide into the SbBi alloy, a higher capacity can be provided for the electrode. At the same time, the heterogeneous interface between the selenide and the alloy is utilized to induce the generation of a built-in electric field, thereby improving the transmission efficiency of charges and electrons and enhancing the structural stability of the material. The electrode is detected in real time using an implantable temperature sensor, and it is found that it has a stable operating temperature and a small temperature fluctuation, which reflects a higher safety.
二、直接将阵列生长在金属铜片上,无需额外的导电剂和粘结剂,电极制备方法简单,操作方便,所需设备简易,易用控制,可大规模工业化生产。Second, the array is grown directly on a metal copper sheet without the need for additional conductive agents and adhesives. The electrode preparation method is simple and easy to operate. The required equipment is simple and easy to control, and can be mass-produced industrially.
三、三维有序的纳米墙结构为钠离子的快速传输提供了通道,并为体积膨胀提供了缓冲空间,提高了电极的循环稳定性。3. The three-dimensional ordered nanowall structure provides a channel for the rapid transmission of sodium ions and a buffer space for volume expansion, thereby improving the cycling stability of the electrode.
四、分布均匀的多相异质界面提高了钠离子的扩散速率,增强了电子电导率,使得该电极展现出较好的倍率性能。4. The evenly distributed multiphase heterogeneous interface increases the diffusion rate of sodium ions and enhances the electronic conductivity, making the electrode exhibit better rate performance.
五、内置温度传感器的引入原位测试结果表明SbBi-Se阵列在循环过程中没有表现出明显的温度波动,具有较高的安全性。5. The introduction of built-in temperature sensor The in-situ test results show that the SbBi-Se array does not show obvious temperature fluctuations during the cycle process and has high safety.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为实施例1所得样品的扫描电子显微镜图片;FIG1 is a scanning electron microscope image of the sample obtained in Example 1;
图2为实施例2所得样品的扫描电子显微镜图片;FIG2 is a scanning electron microscope image of the sample obtained in Example 2;
图3为实施例3所得样品的扫描电子显微镜图片;FIG3 is a scanning electron microscope image of the sample obtained in Example 3;
图4为实施例4所得样品的扫描电子显微镜图片;FIG4 is a scanning electron microscope image of the sample obtained in Example 4;
图5为实施例5所得样品的扫描电子显微镜图片;FIG5 is a scanning electron microscope image of the sample obtained in Example 5;
图6为实施例1所得样品的透射电子显微镜图片;FIG6 is a transmission electron microscope image of the sample obtained in Example 1;
图7为实施例1,5所得到的X-射线衍射花样;FIG7 is the X-ray diffraction pattern obtained in Examples 1 and 5;
图8为实施例1所得样品的X-射线光电子能谱;FIG8 is an X-ray photoelectron spectrum of the sample obtained in Example 1;
图9为实施例1,5所得到的循环对比;FIG9 is a comparison of the cycles obtained in Examples 1 and 5;
图10为实施例1,5所得到的不同倍率循环;FIG10 shows different rate cycles obtained in Examples 1 and 5;
图11为实施例1,5所得到的温度传感器数据;FIG11 is the temperature sensor data obtained in Examples 1 and 5;
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚,下面结合实施方式和附图,对本发明作进一步地详细描述。In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention is further described in detail below in conjunction with the implementation modes and the accompanying drawings.
实施例1Example 1
将0.5 cm × 2 cm的铜片依次放入酒精,稀草酸,去离子水,再酒精中超声15分钟,干燥待用;将20 mL水,30 mL酒精和50 mL乙二醇混合,作为溶液A。将0.025 M氯化锑(SbCl3),0.02 M氯化铋 (BiCl3),0.01 M亚硒酸 (H2SeO3)和0.28 M盐酸乙二胺 (C2H9ClN2)放入A溶液中在磁力搅拌台上充分搅拌;干燥好的铜片作为工作电极,放入三电极体系的电解池中加入配好的电解液,在恒定电流5.2 mA cm-2条件下反应20分钟,沉积完成后取出,用去离子水和酒精进一步清洗15分钟;将沉积好的铜片放入管式炉中进行温和的热处理,在200 ºC氩气下保持1h退火,得到均匀异质界面分布的锑铋-硒化铋-硒化复合材料(SbBi-Se)纳米阵列。A 0.5 cm × 2 cm copper sheet was placed in alcohol, dilute oxalic acid, and deionized water in turn, and then ultrasonicated in alcohol for 15 minutes and dried for later use; 20 mL of water, 30 mL of alcohol, and 50 mL of ethylene glycol were mixed to form solution A. 0.025 M antimony chloride (SbCl 3 ), 0.02 M bismuth chloride (BiCl 3 ), 0.01 M selenious acid (H 2 SeO 3 ) and 0.28 M ethylenediamine hydrochloride (C 2 H 9 ClN 2 ) were placed in solution A and stirred thoroughly on a magnetic stirring table; the dried copper sheet was used as the working electrode and placed in an electrolytic cell of a three-electrode system, and the prepared electrolyte was added. The reaction was carried out at a constant current of 5.2 mA cm -2 for 20 minutes. After the deposition was completed, the copper sheet was taken out and further cleaned with deionized water and alcohol for 15 minutes; the deposited copper sheet was placed in a tube furnace for mild heat treatment and annealed at 200 ºC under argon for 1 hour to obtain an antimony bismuth-bismuth selenide-selenide composite material (SbBi-Se) nanoarray with uniform heterogeneous interface distribution.
将得到的材料组装成纽扣电池,依次是负极盖,弹片,垫片,金属钠片,隔膜,电解液,阵列电极,温度传感器,正极盖。所述封口压力为40-60 kgf cm-2,压实时间为:5-10 s,采用1 M NaPF6在二甲醚中的电解液。The obtained materials are assembled into a button battery, which is composed of a negative electrode cover, a spring, a gasket, a metal sodium sheet, a diaphragm, an electrolyte, an array electrode, a temperature sensor, and a positive electrode cover. The sealing pressure is 40-60 kgf cm -2 , the compaction time is 5-10 s, and the electrolyte is 1 M NaPF 6 in dimethyl ether.
将所装配的电池静置8小时后,在电压窗口为0.01-2.5 V的范围下进行充放电测试,图5结果表明在0.21 A g-1的电流密度下SbBi-Se电极的可逆容量达到了525 mAh g-1。图6在0.7 A g-1的电流密度下循环100圈以后可以有94%的容量保持。除此之外,该电极还展现出了优异的倍率性能,在0.35、0.7、1.4和3.5 A g-1的电流密度下可逆比容量分别为516、512、499和 480 mAh g-1,在每个电流密度下都保持着较高的循环稳定性。After the assembled battery was left to stand for 8 hours, the charge and discharge test was carried out in the voltage window of 0.01-2.5 V. The results in Figure 5 show that the reversible capacity of the SbBi-Se electrode reached 525 mAh g -1 at a current density of 0.21 A g -1 . Figure 6 shows that 94% of the capacity can be retained after 100 cycles at a current density of 0.7 A g -1 . In addition, the electrode also exhibits excellent rate performance, with reversible specific capacities of 516, 512, 499 and 480 mAh g -1 at current densities of 0.35, 0.7, 1.4 and 3.5 A g -1 , respectively, and high cycle stability is maintained at each current density.
实施例2Example 2
采用实施例1清洗铜片的方法准备沉积用的铜片,并使用和实施例1相同的电解液作为沉积溶液,相比之下,采用与实施例1不同的电流密度大小4 mA cm-2进行沉积,得到了不同形貌的样品,该沉积样品的形貌展现出一层颗粒膜,没有像实施例1那种3D结构空隙空间去允许电极在储钠循环过程中的自由变形,并且限制了电极液的渗透,因此不利于提升稳定性。The method for cleaning the copper sheet in Example 1 was used to prepare the copper sheet for deposition, and the same electrolyte as in Example 1 was used as the deposition solution. In contrast, a current density of 4 mA cm -2 different from that in Example 1 was used for deposition, and samples with different morphologies were obtained. The morphology of the deposited sample showed a layer of granular film, and there was no 3D structural void space like in Example 1 to allow free deformation of the electrode during the sodium storage cycle, and the penetration of the electrode liquid was limited, which was not conducive to improving stability.
实施例3Example 3
采用实施例1清洗铜片的方法准备沉积用的铜片,并使用和实施例1相同的电解液作为沉积溶液,相比之下,采用与实施例1不同的电流密度大小8 mA cm-2进行沉积,得到了不同形貌的样品,该样品展现出一定的片状结构,但是有很大一部分物质发生了团聚现象,相对于实施例1来说,此条件下的样品没有实施例1那么整齐,有规律并且带有空隙空间的排列,此样品出现的团聚现象会影响材料进一步的储存,因此不利于提升稳定性。The method for cleaning the copper sheet in Example 1 was used to prepare the copper sheet for deposition, and the same electrolyte as in Example 1 was used as the deposition solution. In contrast, a current density different from that in Example 1, 8 mA cm -2 , was used for deposition to obtain samples with different morphologies. The samples exhibited a certain lamellar structure, but a large portion of the material was agglomerated. Compared with Example 1, the samples under this condition were not as neat, regular, and arranged with void spaces as in Example 1. The agglomeration of the samples would affect the further storage of the material, and was therefore not conducive to improving stability.
实施例4Example 4
采用实施例1清洗铜片的方法准备沉积用的铜片,并使用和实施例1几乎相同的电解液作为沉积溶液,不同的变量在于采用了0.015 M亚硒酸 (H2SeO3),得到了不同形貌的样品,该样品展现出了类似于实例1的结构,不同点在于此条件下的沉积样品只有少量的空隙,大部分都生长在了一起,大量的薄膜现象将增大电荷的传输阻碍,限制电解液的渗透,因此该结构不利于储钠。The method for cleaning the copper sheet in Example 1 was used to prepare the copper sheet for deposition, and an electrolyte almost the same as that in Example 1 was used as the deposition solution, with the difference being that 0.015 M selenious acid (H 2 SeO 3 ) was used, and samples with different morphologies were obtained. The samples exhibited a structure similar to that of Example 1, with the difference being that the deposited samples under this condition had only a small amount of voids, and most of them grew together. A large amount of thin film phenomena would increase the barrier to charge transfer and limit the penetration of the electrolyte, so the structure was not conducive to sodium storage.
实施例5Example 5
采用实施例1清洗铜片的方法准备沉积用的铜片,并使用和实施例1几乎相同的电解液作为沉积溶液,不同的变量在于采用了0.005 M亚硒酸 (H2SeO3),最终观测到了形貌的。The copper sheet for deposition was prepared by the method of cleaning the copper sheet in Example 1, and an electrolyte almost the same as that in Example 1 was used as a deposition solution, except that 0.005 M selenious acid (H 2 SeO 3 ) was used. Finally, the morphology was observed.
实施例6Example 6
采用实施例1清洗铜片的方法准备沉积用的铜片,并使用和实施例1几乎相同的电解液,不同的变量在于采用了0 M亚硒酸 (H2SeO3) 作为沉积溶液,干燥好的铜片作为工作电极,放入三电极体系的电解池中加入配好的电解液,在恒定电流6.6mA cm-2条件下反应20分钟,沉积完成后取出,用去离子水和酒精进一步清洗15分钟;将沉积好的铜片放入管式炉中进行温和的热处理,在200 ºC氩气下保持1h退火,得到二元合金。该沉积样品展现出了颗粒膜的形状,相比之下,实施例1生长的独特结构将更利于储钠。The copper sheet for deposition was prepared by the method of cleaning the copper sheet in Example 1, and an electrolyte almost the same as that in Example 1 was used, except that 0 M selenious acid (H 2 SeO 3 ) was used as the deposition solution. The dried copper sheet was placed in an electrolytic cell of a three-electrode system and the prepared electrolyte was added. The reaction was carried out for 20 minutes at a constant current of 6.6 mA cm -2 . After the deposition was completed, the copper sheet was taken out and further washed with deionized water and alcohol for 15 minutes. The deposited copper sheet was placed in a tube furnace for mild heat treatment and annealed at 200 ºC under argon for 1 hour to obtain a binary alloy. The deposited sample showed the shape of a granular film. In comparison, the unique structure grown in Example 1 will be more conducive to sodium storage.
为了验证其储钠性能,将得到的材料组装成实施例1那样的纽扣电池进行性能测试。图10结果表明在0.35、0.7、1.4和3.5 A g-1的电流密度下可逆比容量分别为382、334、299和 263 mAh g-1。In order to verify its sodium storage performance, the obtained material was assembled into a button cell for performance testing as in Example 1. The results in Figure 10 show that the reversible specific capacities at current densities of 0.35, 0.7, 1.4 and 3.5 A g -1 are 382, 334, 299 and 263 mAh g -1 , respectively.
图1为实施例1所得到的均匀异质界面分布纳米墙阵列的扫描电子显微镜图片,它展现出了顶部稻穗状的纳米墙阵列结构,通过图6透射电子显微镜、图7为X-射线衍射花样和图8的X-射线光电子能谱说明SbBi-Se的成功制备。图9为实施例1,5所得到的充放电循环对比,可以发现例1展现出更好的循环稳定性,在0.7 A g-1的电流密度下循环100圈以后有94%的容量保持。除此之外,图10结果表明该电极还展现出了优异的倍率性能,在0.35、0.7、1.4和3.5 A g-1的电流密度下可逆比容量分别为516、512、499 和480 mAh g-1,在每个电流密度下都保持着较高的循环稳定性。图11为实施例1和5的温度传感器数据,在长时间的温度测试过程中,实施例1电极表现很稳定,没有明显的温度波动,展现出了较高的安全潜力。FIG1 is a scanning electron microscope image of the uniform heterogeneous interface distribution nanowall array obtained in Example 1, which shows a rice-ear-shaped nanowall array structure at the top. The successful preparation of SbBi-Se is illustrated by the transmission electron microscope in FIG6, the X-ray diffraction pattern in FIG7 and the X-ray photoelectron spectrum in FIG8. FIG9 is a comparison of the charge and discharge cycles obtained in Examples 1 and 5. It can be found that Example 1 exhibits better cycle stability, with 94% of the capacity retained after 100 cycles at a current density of 0.7 A g -1 . In addition, the results in FIG10 show that the electrode also exhibits excellent rate performance, with reversible specific capacities of 516, 512, 499 and 480 mAh g -1 at current densities of 0.35, 0.7, 1.4 and 3.5 A g -1 , respectively, and maintains a high cycle stability at each current density. FIG11 is the temperature sensor data of Examples 1 and 5. During the long-term temperature test, the electrode of Example 1 is very stable, with no obvious temperature fluctuations, showing a high safety potential.
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