CN1155165A - Power semiconductor module system - Google Patents
Power semiconductor module system Download PDFInfo
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- CN1155165A CN1155165A CN 96114589 CN96114589A CN1155165A CN 1155165 A CN1155165 A CN 1155165A CN 96114589 CN96114589 CN 96114589 CN 96114589 A CN96114589 A CN 96114589A CN 1155165 A CN1155165 A CN 1155165A
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Abstract
A power semiconductor module system includes a plurality of types of power semiconductor modules (310), which each contain one or more controllable power semiconductors and are each accommodated in a module housing (311) with power connections and control connections which are passed to the outside, as well as a drive unit (325) for each of the power semiconductor modules (310), which drive unit (325) is accommodated in a separate housing (334) and can be detachably connected to the associated power semiconductor module in such a manner that the drive signals which are passed from the drive unit (325) at appropriate control signal outputs pass to the corresponding control connections of the power semiconductor module, the control connections of the power semiconductor modules (310) each being arranged in a first fixed-position three-dimensional configuration, and the control signal outputs of the drive units (325) each being arranged in a second fixed-position three-dimensional configuration which is superimposed on the first configuration.
Description
The present invention relates to power electronics field.It is specifically related to a kind of power semiconductor module system, this system comprises polytype power semiconductor assembly, each assembly respectively has one or more controlled power semiconductors and each assembly and respectively is placed in the assembly shell with the power terminal of outwards drawing and control terminal, and all include a control unit that is installed in the separate housing for each power semiconductor assembly wherein, this control unit can form such rolling over affiliated power semiconductor assembly and be connected, promptly the control signal that outputs on the control signal corresponding output from control unit will arrive power semiconductor assembly control corresponding terminal, therefore, each control end of power semiconductor assembly is arranged to the first fixing space structure layout, and each control signal output ends of control unit is arranged to the second fixing space structure layout, and both can cause in the alignment sleeve unification.
Be used for traction (electric locomotive etc.) the high-power IGBT assembly-it is placed in an assembly shell and in order to control, can with one independently the grid control assembly link to each other or screw on spiral, by the inventor at the article of T.Stockrseier etc. " be used to draw reliable 1200 amperes; 2500 volts IGBT assembly " (IEE IGBT Propulsion DrivesColloguim, London, April 25 nineteen ninety-five) introduced in.Control terminal on the power semiconductor assembly structure consistent with control signal output ends fit aligned with each other on the control unit makes the control unit with shell body can install easily and be tightened on the assembly shell of power semiconductor assembly, thereby necessary electrical connection connects by simple screw and realizes between control unit and the power semiconductor assembly.
In this article, also point out, (it is actually, and little IGBTs by a plurality of parallel connections forms except the single power semiconductor that has described in the literary composition, and additional connected an inverse parallel diode) the assembly of 1200A/2500V outside, also arranged the three phase full bridge formula assembly that has the semibridge system assembly of two separately controllable semiconductor elements or have six power semiconductors.Therefore, all assemblies should have same " subscript ", and in other words, reaching fixedly from size, possibility is interchangeable.In addition, the version of known tip assemblies and affiliated control unit can be with reference to the figure in Fig. 1 and 2.
Unified structure is used to have different in-built various assemblies (single converters, semibridge system, full bridge circuit etc.) standardization that has caused relevant bridge circuit and similar circuit to be constructed in the prior art, this has reduced installation cost and simplification (relevant link, the cooler that can mix etc.) storehouse management.Yet problem appears at the control aspect, needs another kind of control mode because the internal structure difference looked by each assembly.For example under the situation of assembly, only must control a grid with single semiconductor element, and must two grids of control under the situation of the assembly with half-bridge.In addition, also there are two kinds of different structural shapes in the assembly with single semiconductor element, and this will see that the top that it should constitute a half-bridge still is lower part and fixed.
Therefore task of the present invention is: developed a kind of power semiconductor module system that can reduce stock and installation cost aspect control.
This task solves in the described a kind of power semiconductor module system of Introductory part in this wise: first topology layout is identical with second topology layout for all power semiconductor assemblies and control unit, and different power semiconductor assemblies and the control unit difference by control terminal and control signal output ends the line is busy that distribution is distinguished.Standardization by control section wiring construction layout just can be accomplished: utilize the different internal structure of power semiconductor assembly and control unit to constitute the different piece of power semiconductor bridge circuit, and don't must abandon the advantage of unified wiring technology.This unified wiring construction layout has been brought significant simplification with regard to itself, and whether to be present in a kind of unified structure form irrelevant with different power semiconductor assembly for it.
First preferred implementing form of system according to the invention is characterised in that: the housing of assembly shell and control unit is always identical for all power semiconductor assemblies and control unit; It all is the 3rd identical space structure layout of fixing that the power terminal of power semiconductor assembly is arranged to for all power semiconductor assemblies; And different power semiconductor assemblies the line is busy distributes and distinguished by power terminal different.Standardization by assembly outside the control section and control unit has obtained further simplification.
When second preferred implementing form according to this system comprises the suitable especially power semiconductor assembly that constitutes bridge circuit of three classes at least, this system when using with advantageous particularly.Wherein the first kind is the power semiconductor assembly with the half bridge circuit that is made of two power semiconductors, second class is the power semiconductor assembly with a single power semiconductor, it can dress up a brachium pontis of half bridge circuit, the 3rd class is the power semiconductor assembly with single power semiconductor, it can dress up another brachium pontis of half bridge circuit, when if the control signal output ends of the control terminal of first and second topology layout and control unit is rotated symmetrically layout around a symmetry axis, and in the second and the 3rd class power semiconductor assembly control terminal just the line is busy like this layout, make the second class power semiconductor assembly the line is busy the control terminal of layout to forward the 3rd class power semiconductor assembly control terminal that the line is busy to by symmetry angle around a selection of symmetry axis rotation, if and can mix identical control unit for this two classes power semiconductor assembly, it is connected with corresponding power semiconductor assembly with second space layout with first space layout and at the 3rd time-like at second time-like, and these two kinds of layouts show its difference by the symmetry angle around a selection of symmetry axis rotation.In order to control two kinds of different assemblies, can use identical control unit thus, this control unit always is connected with assembly with different spatial configuration.
Some forms of implementation are in addition provided by dependent claims.
Below with reference to accompanying drawing and by embodiment the present invention is elaborated.Accompanying drawing is:
Fig. 1: according to the perspective view of a preferred embodiment of the layout of the terminal of a kind of power semiconductor assembly of the present invention and version;
Fig. 2: the view of all directions when assembly shown in Figure 1 has the control unit of screwing on spiral;
Fig. 3: have the sketch plan of a preferred embodiment of half bridge circuit assembly of two power semiconductors and the connection layout of control section and power section thereof;
Fig. 4: have as the sketch plan of the preferred embodiment of an assembly of the single semiconductor element of half bridge circuit one arm and the attached connection layout of control section and power section thereof;
Fig. 5: have as the sketch plan of the preferred embodiment of an assembly of the single semiconductor element of another arm of half bridge circuit and the attached connection layout of control section and power section thereof.
Fig. 1 has provided the perspective view according to a preferred embodiment of the terminal layout of a kind of power semiconductor assembly of the present invention and version.Power semiconductor assembly 10 is placed in the assembly shell 11 that flat shell shape, electric insulation plastics make.For its internal structure, can consult the described article of Introductory part as an example.This assembly shell 11 can be fixed on the suitable base plate by means of being distributed in its fixing hole 12a-g all around.Arranged the internal power semiconductor element to be electrically connected whole splicing ears of usefulness with an external circuit in the front of assembly.These splicing ears comprise a plurality of power terminals 13 to 17, they each by three connected to one another, protrude upward and curved the terminal block that is parallel to the shell upper surface from housing 11 and form.Each embedding lock nut below terminal block, a connecting screw is passed the circular hole that is arranged on the terminal block and can be screwed in the lock nut.
Have at assembly that power terminal 13 is taken (power terminal 313 in referring to Fig. 3) by the phase output terminal of half bridge circuit (centre tap) under the situation of inner half bridge circuit.When if single semiconductor element only is equipped with in the inside of power semiconductor assembly 10, power terminal 13 not occupied and inoperative thus (referring to the power terminal among Fig. 4 or Fig. 5 413 and 513) then. Power terminal group 14 and 15 and 16 and 17 is connected to each other separately, and has constituted one 6 heavy terminal on the Different Plane of each comfortable assembly.Decide on the component internal structure, the positive electrode of a power semiconductor or negative electrode are collector electrode or expelling plate under the situation of IGBT, link on each 6 heavy terminal.Also will be to preferred splicing ear scheme in the scope of the invention below in conjunction with Fig. 3,4 and 5 explain.
At power terminal 13 is a side and power terminal 14,15 is in the zone line of the assembly 10 between the opposing party, arranged control terminal insulated from each other 19 to 24 under the first predetermined topology layout situation, they can be screwed into by connecting screw (for example among Fig. 2 26 to 31) equally and form the contact connection in the respective nut.These control terminals 19 to 24 are positioned at the inside by four determined rectangles of threaded post 18a-d.By these threaded post, the control unit 25 that a compactness is placed in the independent case 34 can be according to be screwed on the power semiconductor assembly 10 shown in Figure 2ly.Corresponding fixed screw 33a-d can see on the top view of Fig. 2 (a).Downside at control unit 25 orientating components is mounted with control signal output ends (can't see among the figure), and as from the top, these outputs have identical topology layout with the control terminal 19 to 24 of the upside that places power semiconductor assembly 10.The corresponding in principle control signal output ends of each terminal in the control terminal 19 to 24, when control unit 25 is placed on the assembly 10 on the control terminal of this control signal output ends under will being located in, and runs through from the top by control unit 25 and connecting screw 26 (being used for control terminal 19) to 31 (being used for control terminal 24) of being screwed into control terminal by means of one and to be electrically connected with control terminal formation.On the side of control unit 25, be mounted with a plurality of (fiber optic) control signal terminal 32 and the dc power supply terminal 35 (Fig. 2 (c)) that are used for control unit 24 circuits, supply with logic control instructions from optical fiber to control unit 25 by control signal terminal 32, and in control unit, be processed into the control signal (signal) of the power semiconductor that is used for being placed in assembly.
6 control terminals 19 to 24 (Fig. 1) and affiliated connecting screw 26 to 31 (Fig. 2 (a)) are laid symmetrically round a symmetry axis (40 among Fig. 2 (a)) rotation substantially altogether.Symmetry angle is 180 ° herein.If the topology layout of control terminal 19 to 24 or connecting screw 26 to 31 is around symmetry axis 40 Rotate 180s °, then control terminal 19 just in time occupies the position of control terminal 22, control terminal 20 just in time occupies the position of control terminal 23, reach the position that control terminal 21 just in time occupies control terminal 24, vice versa.This symmetric relation is applicable to connecting screw 26 to 31 too by its meaning, and the control signal output ends (can't see among the figure) of control unit 25 downsides.Therefore can be sure of, when at the control unit on the assembly 10 25 during around symmetry axis 40 Rotate 180s °, control signal output ends comes back on the control terminal 19 to 24, and its difference is that the corresponding relation between control signal output ends and the control terminal has produced periodic conversion.When identical control unit should be for the different assemblies with single semiconductor element (Fig. 4 and 5) when having had use, this periodicity conversion plays an important role.
In Fig. 3, provided one according to the wiring schematic diagram that has with the preferred embodiment of the assembly of two power semiconductors of half bridge circuit layout of the present invention.The power semiconductor assembly 310 that has package shell 311 and power terminal 313 to 317 has and Fig. 1, assembly 10 of a sort version and wiring topologies in 2.The control unit 325 with housing 334 and control signal terminal 332 that its control terminal (corresponding to the control terminal 19 to 24 of assembly among Fig. 1 10) is configured is hiding.In assembly 310 inside, arranged two IGBT (insulated gate bipolar transistor) 36 and 37 as power semiconductor, and provided their splicing ear with the form of a circuit diagram.These two IGBT 36 and 37 respectively have a grid 36g, 37g, a collector electrode 36c, 37c, and an emitter 36e, 37e.Because control terminal itself is covered, the binding post 326 to 331 under the IGBT 36 among Fig. 3 and 37 is connected to by symbolic representation, these binding posts are threaded in the control terminal (19-24 among Fig. 1) and form and being connected of control unit.Therefore, binding post 326 is corresponding to the control terminal among Fig. 1 19, and binding post 327 is corresponding to control terminal 20, or the like.
IGBT 36 and 37 is linked to be a half bridge circuit in the inside of power semiconductor assembly 310.For this reason, emitter 36e and second (below) the IGBT collector electrode 37c of first (top) IGBT is connected.Tie point between the first order emitter 36e and the second collector electrode 37c is connected on the power terminal 313 that constitutes the half bridge circuit phase output terminal.This tie point also is connected on the control terminal corresponding to binding post 328 simultaneously, (among Fig. 1 21).This control terminal has constituted an auxiliary emitter electrode of an IGBT36 aspect, has also constituted a supplementary set electrode of the 2nd IGBT37 aspect simultaneously.The collector electrode 36c of the one IGBT36 is connected on the power terminal 316,317, and they have constituted "+" end of half bridge circuit 36,37.The emitter 37e of the 2nd IGBT37 is connected on the power terminal 314,315, and they have constituted "-" end of half bridge circuit.The collector electrode 36c of the one IGBT36 also is connected with a control terminal corresponding to binding post 326, (among Fig. 1 19).This control terminal constitutes a supplementary set electrode of an IGBT36 aspect.Correspondingly the emitter 37e of the 2nd IGBT38 is also connected on the control terminal corresponding to binding post 331 simultaneously, (among Fig. 1 24).This control terminal constitutes an auxiliary emitter electrode of the 2nd IGBT37 aspect.At last, each is connected the grid 36g of these two IGBT and 37g with a control terminal corresponding to binding post 327 and 330, (among Fig. 1 20 and 23).
When we can be regarded as auxiliary terminal to each gate terminal, the half bridge circuit of the power semiconductor assembly 310 among Fig. 3 just had three main terminals 316,317 and 313 and 314,315 and five auxiliary terminals (binding post 326,327,328,330 and 331) altogether.These auxiliary terminals are connected on the control unit 325 by binding post.The terminal corresponding with binding post 329 (among Fig. 1 22) is unoccupied, because two auxiliary terminals, promptly the auxiliary emitter electrode of an IGBT36 and the supplementary set electrode of the 2nd IGBT37 jointly connect by binding post 328.
Adopt this power semiconductor assembly and control unit with a kind of version, from now on just can plain mode realize the assembly of other type.This is especially at the power semiconductor assembly that respectively has single semiconductor element 410 and 510 shown in Fig. 4 and 5, and the outside connection by assembly can be interconnected into a half bridge circuit easily.At this moment the assembly of Fig. 4 has constituted so-called positive assembly, promptly plays the assembly of the first half effect of Fig. 3 half bridge circuit.The assembly of Fig. 5 is corresponding to a Negation Element, and it is used to constitute the latter half of half bridge circuit shown in Figure 3.
The positive assembly of Fig. 4 (power semiconductor assembly 410) assembly shell 411 (it with Fig. 3 in assembly shell 311 to begin from version all be identical) in comprise single IGBT38, it is connected on the power terminal 416,417 with its collector electrode 38c in the mode identical with the IGBT36 of Fig. 3.Its emitter 38e and power terminal 414,415 are connected, and they are equivalent to the power terminal 314,315 among Fig. 3.Power terminal 413 is unoccupied, therefore can save.
With regard to the Negation Element (power semiconductor assembly 510) that Fig. 5 provides, very similar with the situation of positive assembly.An IGBT39 also is housed as single semiconductor element here in a power semiconductor assembly 510, it has that assembly shell 511 and a plurality of power terminal 513 to 516 begin from version is all to be identical with the assembly of Fig. 3 and 4.This IGBT39 is connected on the power terminal 514,515 with its collector electrode 39c, and its emitter 39e is connected on the power terminal 516,517.Because these power terminals 514,515 and 516,517, be positioned on the Different Plane of assembly-as can be seen from Figure 1, by this wiring topology, can be very simply be connected at grade by the collector electrode 39c of the assembly of Fig. 5, so that constitute a complete half-bridge with emitter 38e by another assembly of Fig. 4.Here power terminal 513 is also vacant, therefore also can save.Aspect control, IGBT39 is to be connected with the similar mode of the 2nd IGBT37 of Fig. 3: emitter 39e is connected with control terminal at binding post 531 as auxiliary emitter electrode, and grid 39g is on the control terminal of binding post 530.In order to constitute the supplementary set electrode, in the case with Fig. 3 in different, collector electrode 39c is connected with control terminal at binding post 529.
The assembly 410 of two kinds of single semiconductor elements and 510 characteristics are: because to these two kinds of assemblies, control terminal and the binding post 426-431 and the 526-531 of rotation symmetric configuration have been used, so in these different space layouts, can use identical control unit.Under the situation of the power semiconductor assembly 410 of Fig. 4 (positive assembly), control unit 425 is located in this wise and be screwed on the assembly with screw: the control signal output ends of settling in control unit is by means of binding post 426,427 and 428 are connected to the supplementary set electrode 38c of IGBT38, on grid 38g and the auxiliary emitter electrode 38e.At this moment control signal terminal 432 is in the below.
Under the situation of the power semiconductor assembly 510 (Negation Element) of Fig. 5, control unit 425 Rotate 180s °, be screwed on the assembly with screw again, therefore, the same control signal output ends of settling in control unit is by means of binding post 529,530 and 531 are connected to the supplementary set electrode 39c of IGBT39 in a similar manner, on grid 39g and the auxiliary emitter electrode 39e.At this moment control signal terminal 432 is in the top.In this way, in category of the present invention, found a kind of system that constitutes by power semiconductor assembly and attached control unit and be used to form the semiconductor element half bridge circuit, its characteristics are unified, standardized version, are easy to combination with one another and use a few dissimilar control unit just enough.
Symbol list 10,310,410,510, power semiconductor assembly 11,311,411,511, assembly shell 12a-g fixing hole 13-17 power terminal 18a-d bolt 19-24 control terminal 25,325,425 control modules 26,31 binding posts 32,332,432 control signal terminal 33a-d fixed screws 34,334,434 housings (control module), 35 power supply terminals 36,37 IGBT (semibridge system) 36c, 37c colelctor electrode 36e, 37e emitter stage 36g, 37g grid 38,39 IGBT (single) 38c, 39c colelctor electrode 38e, 39e emitter stage 38g, 39g grid 40 symmetry axis 313-317 power terminal 326-331 binding post 413-417 power terminal 426-431 binding post 513-517 power terminal 526-531 binding posts
Claims (8)
1. power semiconductor module system, comprise polytype power semiconductor assembly (10,310,410,510), each assembly respectively has one or more controlled power semiconductors (36,37,38,39) and each assembly respectively be placed in and have the power terminal (13-17 that outwards draws, 313-317,413-417,513-517) and an assembly shell (11 of control terminal (19-24), 311,411,511) in, and for each power semiconductor assembly (10 wherein, 310,410,510) there is one to be installed in separate housing (34,334,434) Nei control unit (25,325,425), this control unit can form removable like this being connected with affiliated power semiconductor assembly, promptly will arrive on the power semiconductor assembly control corresponding terminal (19-24) from control unit (25,325,425) to the control signal on the corresponding control signal output, at this moment power semiconductor assembly (10,310,410,510) each control terminal (19-24) is arranged to the first fixing space structure layout, and control unit (25,325,425) each control signal output ends is arranged to the second fixing space structure layout, and first topology layout and second topology layout are in full accord, it is characterized in that: first topology layout and second topology layout are to all power semiconductor assemblies (10,310,410,510) and control unit (25,325,425) be identical; And different power semiconductor assembly (10,310,410,510) and control unit (25,325,425) show its difference by the different wiring construction layouts of control terminal (19-24) and control signal output ends.
2. power semiconductor module system according to claim 1 is characterized in that: assembly shell (11,311,411,511) and control unit (25,325,425) housing (34,334,434) for all power semiconductor assemblies (10,310,410,510) and control unit (25,325,425) always identical.
3. power semiconductor module system according to claim 2 is characterized in that: (413-417 513-517) is arranged to the 3rd fixing space structure layout to the power terminal of power semiconductor assembly (10,310,410,510) for 13-17,313-317; The 3rd topology layout is identical for all power semiconductor assemblies (10,310,410,510), and different power semiconductor assemblies (10,310,410,510) is by power terminal (13-17,313-317,413-417, the line is busy that layout shows its difference for difference 513-517).
4. according to each described power semiconductor module system in the claim 1 to 3, it is characterized in that: this system comprises three kinds of power semiconductor assembly types at least, they are particularly suited for constituting bridge circuit, wherein the first kind has by two power semiconductors (36,37) power semiconductor assembly of the semibridge system of Gou Chenging (310), second class has the power semiconductor assembly (410) of single power semiconductor (38), it is as a brachium pontis of a half bridge circuit, reach the power semiconductor assembly (510) that the 3rd class has single power semiconductor (39), it is as another brachium pontis of a half bridge circuit.
5. power semiconductor module system according to claim 4 is characterized in that: the control signal output ends of control terminal of first and second topology layout (19-24) and control unit (25,325,425) is around a symmetry axis (40) rotation symmetric configuration; In the power semiconductor assembly (410 and 510) of second and third class, control terminal only in this way is occupied, and promptly the control terminal that takies in second class (410) forwards the control terminal that takies in the 3rd class (510) to by the symmetry angle of rotating a selection around symmetry axis; In addition for two class power semiconductor assemblies (410,510) can use identical control unit (425), it is connected with corresponding power semiconductor assembly (410 or 510) with second space layout with first space layout and when the 3rd type (510) when second type (410), and at this moment these two kinds of layouts are distinguished by the symmetric angle of rotating a selection around symmetry axis (40).
6. power semiconductor module system according to claim 5 is characterized in that: selected symmetric angle is 180 °.
7. according to each described power semiconductor module system in the claim 1 to 6, it is characterized in that: power semiconductor assembly (10,310,410, the control signal output ends of control terminal 510) (19-24) and control unit (25,325,425) is respectively by binding post (326-331,426-431 526-531) can realize being electrically connected each other.
8. according to each described power semiconductor module system in the claim 1 to 7, it is characterized in that: the controllable semiconductor element constitutes IGBT (36,37,38,39).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96114589 CN1155165A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor module system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96114589 CN1155165A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor module system |
| US562453 | 2000-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1155165A true CN1155165A (en) | 1997-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96114589 Pending CN1155165A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor module system |
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| Country | Link |
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| CN (1) | CN1155165A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7397116B2 (en) | 2004-01-08 | 2008-07-08 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus and production method thereof suitable for electric power devices |
| CN102484110A (en) * | 2009-10-22 | 2012-05-30 | 松下电器产业株式会社 | Power semiconductor module |
-
1996
- 1996-11-22 CN CN 96114589 patent/CN1155165A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7397116B2 (en) | 2004-01-08 | 2008-07-08 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor apparatus and production method thereof suitable for electric power devices |
| CN102484110A (en) * | 2009-10-22 | 2012-05-30 | 松下电器产业株式会社 | Power semiconductor module |
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