CN115513619B - Microstrip pattern layer, preparation method thereof and ultra-wide stop band low-pass filter - Google Patents
Microstrip pattern layer, preparation method thereof and ultra-wide stop band low-pass filter Download PDFInfo
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- CN115513619B CN115513619B CN202211164900.0A CN202211164900A CN115513619B CN 115513619 B CN115513619 B CN 115513619B CN 202211164900 A CN202211164900 A CN 202211164900A CN 115513619 B CN115513619 B CN 115513619B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The application provides a microstrip pattern layer, a preparation method thereof and an extremely wide stop band low-pass filter thereof, wherein the microstrip pattern layer comprises the following components: the double-hairpin filter unit comprises a double-hairpin filter unit, an external connecting wire and a feeder line. The double-hairpin filter unit is based on the traditional hairpin structure, the number of hairpin structures contained in the double-hairpin filter unit is increased, the frequency doubling frequency can be increased under the same circuit size, and the fundamental frequency is kept unchanged, so that the stop band width of the low-pass filter is greatly increased. In addition, the double hairpin filter element can also maintain high rejection depth and introduce transmission zeros at the band edges, thereby increasing frequency selectivity. The double-hairpin low-pass filter has the advantages of wide stop band, deep suppression, high frequency selectivity and compact structure.
Description
Technical Field
The application belongs to the field of filters of radio frequency or microwave engineering technology, and particularly relates to a microstrip pattern layer, a preparation method thereof and an extremely wide stop band low-pass filter.
Background
Microstrip filters are affected by the unequal odd-even mode phase velocities, and there are spurious pass bands formed by frequency doubling, frequency tripling, or even higher frequency doubling, in addition to the pass band at the fundamental frequency location. The presence of the spurious pass-band greatly compresses the stopband rejection width of the microstrip filter, thereby degrading the rejection capability of the filter for spurious signals.
One existing method to expand the stop band of a low pass filter is to use self-coupling of the filter elements, such as hairpin low pass filters. The traditional hairpin low-pass filter can reduce the fundamental frequency, and compared with the step impedance low-pass filter, the stop band width of the conventional hairpin low-pass filter is improved to a certain extent, but the conventional hairpin low-pass filter is insufficient in application scenes requiring extremely wide stop bands, such as superconducting quantum calculation.
The filter unit has higher charge carrying capacity, and the hairpin structure can attract a large amount of charges when working at the fundamental frequency, so that the total self-capacity of the filter is increased. The increased self-capacity can effectively reduce the cut-off frequency (or the fundamental frequency of a filter unit) of the filter, so that the width of the stop band is widened, and the effect of improving the inhibition capability of the filter is achieved, but the traditional hairpin low-pass filter cannot fully excavate the advantage of the parallel resonance circuit to expand the stop band, the expansion of the stop band is realized only by reducing the cut-off frequency without increasing frequency doubling, and therefore, the width of the stop band is limited.
Disclosure of Invention
Therefore, the application aims to overcome the defects in the prior art and provide a microstrip pattern layer, a preparation method thereof and an extremely wide stop band low-pass filter thereof. The ultra-wide stop band low-pass filter comprising the microstrip pattern layer can reduce the cut-off frequency and simultaneously raise the frequency doubling to obtain the ultra-wide stop band.
Before describing the present application, the terms used herein are defined as follows:
the term "interdigital structure" refers to: or interdigital structure, is a finger-like or comb-like structure, and is commonly used in interdigital capacitors to increase the capacitance of the capacitor.
In order to achieve the above object, a first aspect of the present application provides a microstrip pattern layer of an extremely wide stop band low-pass filter, where the microstrip pattern layer is a conductor layer including a dual hairpin filter unit, an external connection line and a feeder line;
the double-hairpin filter unit is a single double-hairpin filter unit or a cascade double-hairpin filter unit.
The microstrip pattern layer according to the first aspect of the present application, wherein, the left and right ends of the dual hairpin filter unit are respectively connected with an external connection line, one end of the external connection line is connected with one end of the feeder line, and the other end is connected with a port of a single dual hairpin filter unit or a cascaded dual hairpin filter unit;
preferably, the feed line is a 30 ohm to 70 ohm impedance feed line, more preferably a 40 ohm to 60 ohm impedance feed line, and most preferably a 50 ohm impedance feed line.
The microstrip pattern layer according to the first aspect of the present application, wherein,
the single double-hairpin filter unit comprises a hairpin-shaped structure and a port, wherein the hairpin-shaped structure is composed of a coupling open-circuit stub, a branch connecting wire and a trunk connecting wire; and/or
The upper part and the lower part of the single double-hairpin filter unit respectively comprise a hairpin structure, and the two hairpin structures share a main path connecting line;
preferably, each pair of coupled open stubs comprises two open stubs; and/or
Preferably, in the single double hairpin-line filter unit, one end of the branch connection line is connected to the coupling open stub, and the other end is connected to the trunk connection line, the port, and the branch connection line of another hairpin structure, respectively.
The microstrip pattern layer according to the first aspect of the present application, wherein the cascaded double-hairpin filter unit includes not less than two double-hairpin filter units; wherein, the adjacent double hairpin filter units share an upper open-circuit stub and a lower open-circuit stub and branch connecting wires thereof; the main connection lines of adjacent double hairpin filter units are connected and connected with a shared branch connection line.
The microstrip pattern layer according to the first aspect of the present application, wherein,
the logarithm of the coupling open stub is 1-20 pairs, preferably 1-4 pairs, most preferably 2 pairs;
the open stub is a low-impedance microstrip line; and/or
The branch connecting wire, the main connecting wire and the external connecting wire are all high-impedance microstrip lines;
preferably, the pair of coupled open stubs has an interdigital structure therebetween.
The microstrip pattern layer according to the first aspect of the present application, wherein the shape of the trunk connection line and the outer connection line is a meander line shape or a straight line shape, most preferably a meander line shape;
preferably, the microstrip pattern layers of the ultra-wide stop band low-pass filter are vertically symmetrical except for the connecting lines and the trunk connecting lines; and/or
Preferably, the whole microstrip pattern layer of the ultra-wide stop band low-pass filter is centrosymmetric.
A second aspect of the present application provides a method of preparing the microstrip pattern layer of the first aspect, the method comprising the steps of:
(1) Constructing a circuit pattern;
(2) Transferring the circuit pattern constructed in the step (1) onto the conductor layer at the top, and obtaining the microstrip pattern layer carved with the filter unit.
The method according to the second aspect of the application, wherein:
the step (1) further comprises: constructing a structure of a double hairpin filter unit according to the required cut-off frequency, cascading the filter units to enable the width of a stop band, the steepness of a band edge and the inhibition depth to meet the requirements, connecting the filter units with a feeder line through an external connecting line, and finally fine-adjusting the filter structure to enable the position of a pass band and the internal reflection of the band to meet the requirements; and/or
In the step (2), the method of transferring the circuit pattern is selected from one or more of the following: optical lithography, etching, electron beam lithography, laser direct writing;
preferably, the optical lithography is preferably selected from one or more of the following: ultraviolet lithography, deep ultraviolet lithography, and extreme ultraviolet lithography.
A third aspect of the present application provides an extremely wide stop band low pass filter, the wide stop band low pass filter comprising, in order from top to bottom:
a microstrip pattern layer according to the first aspect;
a dielectric layer; and
and a grounding conductor layer.
An extremely wide stop band low pass filter according to the third aspect of the application, wherein:
the microstrip pattern layer and/or the grounding conductor layer are/is constructed from one or more of the following materials: silver, copper, gold, aluminum, iridium barium copper oxide, dysprosium barium copper oxide, mercury barium copper oxide, thallium barium calcium copper oxide, preferably selected from one or more of the following: iridium barium copper oxide, dysprosium barium copper oxide, mercury barium copper oxide, thallium barium calcium copper oxide, more preferably iridium barium copper oxide or dysprosium barium copper oxide; and/or
The material of the dielectric layer is selected from one or more of the following: polytetrafluoroethylene, magnesia, alumina, lanthanum aluminate, preferably selected from one or more of the following: magnesium oxide, aluminum oxide, lanthanum aluminate, more preferably magnesium oxide or aluminum oxide.
According to a specific embodiment of the present application, a first aspect of the present application provides a microstrip line model of a dual hairpin low-pass filter consisting of a single (or cascaded) filter cell, an external connection line and a feed line.
The single filter unit microstrip transmission line model comprises: two pairs of coupling open-circuit stubs, wherein each pair of coupling open-circuit stubs is respectively connected with one end of a branch connecting wire, and the other end of the branch connecting wire is connected with a main connecting wire, a port and the other branch connecting wire; each pair of coupling open-circuit stubs, the branch connecting wires and the main connecting wires form a hairpin structure; the upper part and the lower part of the double-hairpin filter unit respectively comprise a hairpin structure, and the two hairpin structures share a trunk connecting line.
The cascaded multiple filter element transmission line model comprises: the double-hairpin filter unit comprises at least two double-hairpin filter units, wherein two upper and lower open-circuit stubs and branch connecting wires thereof are shared by adjacent double-hairpin filter units; the main connection lines of adjacent double hairpin filter units are connected and connected with a shared branch connection line.
The single filter unit (or a plurality of cascaded filter units) forms the dual hairpin low-pass filter transmission line model, and comprises: a fifty ohm impedance feeder line is arranged at each of the left end and the right end; the feeder line is connected with one end of the external connecting line; the other end of the external connecting wire is connected with ports of a plurality of cascaded double-hairpin filter units.
According to a microstrip model of the dual hairpin low-pass filter of the first aspect of the application, a second aspect of the application provides a microstrip implementation method thereof, comprising: the coupling open stub is a pair of low impedance microstrip lines; the branch connection line, the main connection line and the external connection line are high-impedance microstrip lines.
Preferably, in each pair of coupled open stub lines, a pair of interdigital structures can be inserted between two low-impedance microstrip lines to enhance self-coupling.
More preferably, the main connection line and the external connection line may be serpentine to reduce the size of the structure.
Each pair of coupling open stubs may be asymmetrically coupled, i.e., the lengths and widths of the two low impedance microstrip lines may be different.
The ultra-wide stop band high-selectivity low-pass filter is symmetrical up and down except for the external connection and the trunk connection line, and is symmetrical in the center as a whole, so that the construction complexity is reduced.
According to another specific embodiment of the application, the ultra-wide stop band high-selectivity low-pass filter is characterized in that the top layer is a microstrip pattern formed by a pattern transfer technology, the middle layer is a dielectric medium, and the bottom layer is a grounding conductor;
preferably, the material used for the top microstrip pattern is selected from one or more of the following: iridium barium copper oxide, dysprosium barium copper oxide, mercury barium copper oxide, thallium barium calcium copper oxide;
more preferably, the material used for the middle layer dielectric is selected from one or more of the following: magnesium oxide, aluminum oxide, lanthanum aluminate.
The application provides an extremely wide-resistance high-selectivity low-pass filter comprising a microstrip pattern layer. The ultra-wide stop band high-selectivity low-pass filter is a microstrip filter and is composed of three layers, wherein the bottom layer is a grounding conductor, the middle layer is a dielectric medium, and the top layer is carved with microstrip patterns of the filter. The microstrip pattern mainly comprises a double hairpin filter unit, an external connecting wire and a feeder line. The double hairpin filter unit is based on the traditional hairpin structure, the number of hairpin structures contained in the double hairpin filter unit is increased, the frequency doubling frequency can be increased and the fundamental frequency is kept unchanged under the same circuit size, and therefore the stop band width of the low-pass filter is greatly increased. In addition, the double hairpin filter element can also maintain high rejection depth and introduce transmission zeros at the band edges, thereby increasing frequency selectivity. The double-hairpin low-pass filter has the advantages of wide stop band, deep suppression, high selectivity and compact structure.
The extremely wide stop band low pass filter comprising the microstrip pattern layer of the present application may have, but is not limited to, the following beneficial effects:
1. the dual hairpin filter element is based on a conventional single hairpin structure, increasing the number of hairpin structures contained therein, the input impedance for frequency doubling being reduced, and the input impedance for fundamental frequency being unchanged. Therefore, the cut-off frequency of the double hairpin low-pass filter is basically consistent with that of the traditional hairpin low-pass filter, but the frequency doubling is obviously raised, and the stop band width is greatly expanded.
2. After the stopband of the double hairpin low-pass filter is widened, the high suppression level of the stopband can be maintained.
3. The center connection line and the coupling open stub of each filter unit form a parallel resonant circuit, a transmission zero can be introduced at the band edge, and the filter has high frequency selectivity.
4. When the traditional single-hairpin structure is changed into the double-hairpin structure, the circuit size is hardly increased, all distributed elements are closely distributed, and the structure is compact.
Drawings
Embodiments of the present application are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 shows a transmission line model diagram of two filter units. Wherein fig. 1 (a) shows a transmission line model diagram of a conventional hairpin-filter cell; fig. 1 (b) shows a transmission line model diagram of a single dual hairpin-filter cell of the application.
Fig. 2 shows a schematic diagram of a cascaded two hairpin filter element transmission line model.
Fig. 3 shows a transmission line model diagram of a dual hairpin filter cell of an extremely wide stop band low-pass filter of embodiment 1 of the application.
Fig. 4 shows a microstrip pattern structure of an ultra wide stop band low pass filter comprising a dual hairpin filter element.
Fig. 5 shows a microstrip structure of a low-pass filter including a conventional hairpin-filter cell.
Fig. 6 shows a simulated response comparison of the dual hairpin low-pass filter shown in fig. 4 with the conventional hairpin low-pass filter shown in fig. 5.
Fig. 7 shows a microstrip structure diagram of a high-order double-hairpin low-pass filter including nine filter units, in which the high-order double-hairpin low-pass filter including nine filter units is centrosymmetric, S1 to S5 are open stubs, each adjacent two open stubs form a pair of coupled open stubs, I1 to I5 are interdigital structures, and M0 to M5 are meander lines.
Fig. 8 shows a graph of the high order dual hairpin low pass filter simulation versus test response of fig. 7.
Fig. 9 shows a flow chart of the construction of an extremely wide stop band low pass filter.
Reference numerals illustrate:
1. a first feeder line; 2. a second feeder line; 3. a first external connection line; 4. a second external connection line; 5. cascaded dual hairpin filter cells; 51. a first coupled open stub; 511. a first open stub; 512. a second open stub; 513. a first interdigital structure; 52. a second coupled open stub; 521. a third open stub; 522. a fourth open stub; 523. a second interdigital structure; 531. a first branch connecting wire; 532. a second branch connecting wire; 533. a third branch connecting line; 534. a fourth branch connecting line; 54. and a main connecting line.
Detailed Description
The application is further illustrated by the following specific examples, which are, however, to be understood only for the purpose of more detailed description and are not to be construed as limiting the application in any way.
This section generally describes the materials used in the test of the present application and the test method. Although many materials and methods of operation are known in the art for accomplishing the objectives of the present application, the present application will be described in as much detail herein. It will be apparent to those skilled in the art that in this context, the materials and methods of operation used in the present application are well known in the art, if not specifically described.
Example 1
The embodiment is used for explaining the preparation methods of the microstrip pattern layer and the ultra-wide stop band low-pass filter and the performance advantages of the microstrip pattern layer and the ultra-wide stop band low-pass filter and the conventional hairpin low-pass filter.
The preparation method comprises the following steps:
(1) And selecting the material. The filter is a microstrip filter, the top of the microstrip filter is a microstrip pattern layer of a dysprosium barium copper oxygen superconducting film, the middle of the microstrip filter is a dielectric layer of magnesium oxide, and the bottom of the microstrip filter is a grounding conductor layer of the dysprosium barium copper oxygen superconducting film. The microstrip pattern layer is engraved with the pattern of the filter.
(2) And (5) constructing a microstrip pattern. Fig. 1 shows a transmission line model diagram of two filter units. Wherein fig. 1 (a) shows a transmission line model diagram of a conventional hairpin-filter cell; fig. 1 (b) shows a transmission line model diagram of a single dual hairpin-filter cell of the application. Referring to the microstrip line model diagram of the dual hairpin filter cell shown in fig. 1 (b), the microstrip structure of the constructed dual hairpin filter cell is shown in fig. 4: wherein the main connection line 54 uses a serpentine line to promote compactness; the first branch connection line 531, the second branch connection line 532, the third branch connection line 533, and the fourth branch connection line 534 use low-impedance transmission lines; a pair of upper and lower coupling open stubs, the lower first coupling open stub 51 being constituted by a first open stub 511 and a second open stub 512, the upper second coupling open stub 52 being constituted by a third open stub 521 and a fourth open stub 522; the first open stub 511, the second open stub 512, the first branch connection line 531 and the second branch connection line 532 form the following one hairpin structure, and the third open stub 521, the fourth open stub 522, the third branch connection line 533 and the fourth branch connection line 534 form the above one hairpin structure, and the filter unit includes two hairpin structures and is called a double-hairpin filter unit; the first and second inter-digital structures 513 and 523 are used in the coupled open stub to enhance the self-coupling of the filter cell.
Fig. 3 shows a transmission line model diagram of a dual hairpin filter cell of an extremely wide stop band low-pass filter of embodiment 1 of the application. Referring to the microstrip line model diagram of the dual hairpin low-pass filter shown in fig. 3, the constructed dual hairpin low-pass filter microstrip structure is shown in fig. 4: the double-hairpin low-pass filter comprises a filter unit, wherein two ports of the filter unit are respectively connected with the first external connecting wire 3 and the second external connecting wire 4; the outer connecting line is in a serpentine shape so as to improve the compactness of the structure; the first and second external connection lines 3 and 4 are connected to the first and second feed lines 1 and 2, respectively. The filter is vertically symmetrical except the serpentine trunk connection line, and the whole filter is centrosymmetric so as to reduce the construction complexity.
Fig. 5 shows a microstrip structure of a low-pass filter including a conventional hairpin-filter cell. By comparison, the dual hairpin low-pass filter shown in fig. 4 is obtained by halving the lengths of the first open stub 511, the second open stub 512 and the first interdigital structure 513 shown in fig. 5, and adding a hairpin structure thereto. Thus, the dual hairpin low-pass filter shown in fig. 4 has almost the same dimensions as the conventional hairpin low-pass filter shown in fig. 5. Under the condition of similar size, the double-hairpin low-pass filter can provide the same self-capacity as the traditional hairpin structure at the fundamental frequency, but provides smaller self-capacity at the frequency doubling. Therefore, the double hairpin low-pass filter can keep the same fundamental frequency, and increase the frequency doubling frequency to expand the stop band width.
Fig. 6 is a graph showing a comparison of the simulated response of the dual hairpin low-pass filter shown in fig. 4 and the conventional hairpin low-pass filter shown in fig. 5. The graph in fig. 6 shows that the conventional hairpin low-pass filter is only converted into the double hairpin low-pass filter, and the frequency doubling is increased from 3.05GHz to 5.98GHz under the almost same circuit size, and the cut-off frequency is kept near 500MHz, which is equivalent to 120% expansion of the stop band width. In addition, the filter can still maintain the position of the band edge transmission zero point under the structural transformation, high selectivity is maintained, meanwhile, the inhibition depth is improved, and the inhibition level is higher than 30dB. The double hairpin low-pass filter has the advantages of wide stopband, deep suppression and high compactness compared with the traditional hairpin low-pass filter.
Example 2
The embodiment is used for explaining the construction and manufacturing method of the high-order double-hairpin low-pass filter.
Fig. 7 shows a microstrip structure diagram of a high-order double-hairpin low-pass filter including nine filter units, in which the high-order double-hairpin low-pass filter including nine filter units is centrosymmetric, S1 to S5 are open stubs, each adjacent two open stubs form a pair of coupled open stubs, I1 to I5 are interdigital structures, and M0 to M5 are meander lines.
The high-order dual hairpin low-pass filter shown in fig. 7 is similar to that of embodiment 1 except that cascaded filter units are used. The cascaded filter unit comprises two filter units: one is a main filter unit, such as units 4 to 6, having a low fundamental frequency and a double frequency for providing a cut-off frequency of the low pass filter; one is an auxiliary filter unit, such as units 1 to 3 and units 6 to 9, with higher fundamental frequency and frequency doubling for further expanding the stop band width of the low pass filter. The center connection line used by the main filter unit has a longer unfolding length, a longer finger length of the interdigital structure and a wider stub width. In this embodiment, the fundamental frequency of the main filter unit is set to 430MHz, the frequency doubling is set to 6.98GHz, and a 500MHz low-pass cut-off frequency can be provided after the external connection line is connected.
The cascade mode of the filter units of the high-order dual hairpin low-pass filter shown in fig. 7 is as follows: the adjacent filter units share an open-circuit stub and a branch connection line thereof, and the trunk connection lines of the adjacent filter units are connected. Three identical main filter units are cascaded to provide high frequency selectivity and high stop band rejection. The six auxiliary filter units are cascaded to inhibit the frequency multiplication of the main filter unit and provide a larger stop band width; the auxiliary filter unit is cascaded by using asymmetric coupling open stub wires, namely, the widths of the left low impedance wire and the right low impedance wire in each pair of coupling open stub wires are not consistent.
And manufacturing the constructed microstrip pattern on the conductor layer on the microstrip circuit board by using a pattern transfer technology mainly comprising photoetching and argon ion beam etching according to the constructed microstrip pattern of the high-order double-hairpin low-pass filter. The upper layer of the microstrip circuit board is a conductor and is used for manufacturing a microstrip pattern of the filter, the middle layer is a dielectric medium, and the bottom layer is a grounding conductor. In the application, dysprosium barium copper oxygen superconducting films are used as conductors of the upper layer and the lower layer, and magnesium oxide is used as dielectric medium.
Fig. 8 shows a graph of the high order dual hairpin low pass filter simulation versus test response of fig. 7. Fig. 8 shows a test and simulation frequency response curve of the high-order dual hairpin low-pass filter of the application. The test curve reflects that the cut-off frequency of the filter is 484MHz, the rejection depth of the stop band extending to 10.35GHz (21.4 times the cut-off frequency) is higher than 30dB, and the rejection depth of the stop band extending to 5.4GHz (11.2 times the cut-off frequency) is higher than 60dB. The steepness of the band edge is better than 590dB/GHz, and the band interpolation loss is less than 0.04dB. The overall size of the filter is only 43mm by 14mm. The test result shows that the filter has extremely wide stop band, extremely deep inhibition, extremely high frequency selectivity, extremely small in-band insertion loss and extremely high structural compactness.
The cut-off frequency of the double-hairpin low-pass filter constructed by the construction method can be between 30MHz and 100GHz, and the stop band width is more than 20 times of the cut-off frequency.
Although the present application has been described to a certain extent, it is apparent that appropriate changes may be made in the individual conditions without departing from the spirit and scope of the application. It is to be understood that the application is not to be limited to the described embodiments, but is to be given the full breadth of the claims, including equivalents of each of the elements described.
Claims (20)
1. The microstrip pattern layer of the ultra-wide stop band low-pass filter is characterized by comprising a double-hairpin filter unit, an external connecting wire and a conductor layer of a feeder line;
the double-hairpin filter unit is a single double-hairpin filter unit or a cascade double-hairpin filter unit;
the left end and the right end of the double-hairpin filter unit are respectively connected with an external connecting wire, one end of the external connecting wire is connected with one end of the feeder line, and the other end of the external connecting wire is connected with a port of the single double-hairpin filter unit or the cascaded double-hairpin filter unit;
the single double-hairpin filter unit comprises a hairpin-shaped structure and a port, wherein the hairpin-shaped structure is composed of a coupling open-circuit stub, a branch connecting wire and a trunk connecting wire;
the upper part and the lower part of the single double-hairpin filter unit respectively comprise a hairpin structure, and the two hairpin structures share a main path connecting line;
in the single double-hairpin filter unit, one end of the branch connecting wire is connected with the coupling open-circuit stub, and the other end of the branch connecting wire is respectively connected with the main connecting wire, the port and the branch connecting wire of the other hairpin structure.
2. The microstrip pattern layer according to claim 1, wherein said feed line is a 30-70 ohm impedance feed line.
3. The microstrip pattern layer according to claim 2, wherein said feed line is a 40-60 ohm impedance feed line.
4. A microstrip pattern layer according to claim 3, wherein said feed line is a 50 ohm impedance feed line.
5. The microstrip pattern layer according to claim 1, wherein each pair of coupled open stub comprises two open stubs.
6. The microstrip pattern layer according to claim 1, wherein said cascaded double hairpin filter elements comprise no less than two double hairpin filter elements; wherein, the adjacent double hairpin filter units share an upper open-circuit stub and a lower open-circuit stub and branch connecting wires thereof; the main connection lines of adjacent double hairpin filter units are connected and connected with a shared branch connection line.
7. The microstrip pattern layer according to claim 1, wherein:
the logarithm of the coupling open stub is 1-20 pairs;
the open stub is a low-impedance microstrip line; and/or
The branch connecting wire, the main connecting wire and the external connecting wire are all high-impedance microstrip lines.
8. The microstrip pattern layer according to claim 7, wherein the pair number of said coupling open stub is 1-4.
9. The microstrip pattern layer according to claim 8, wherein the pair number of said coupling open stub is 2.
10. The microstrip pattern layer according to claim 5, wherein each pair of coupled open stub has an interdigital structure therebetween.
11. The microstrip pattern layer according to claim 1, wherein the shape of said trunk connection line and said outer connection line is a meander line shape or a straight line shape.
12. The microstrip pattern layer according to claim 11, wherein the shape of said trunk connection line and said outer connection line is a serpentine shape.
13. The microstrip pattern layer according to claim 1, wherein:
the microstrip pattern layers of the ultra-wide stop band low-pass filter are vertically symmetrical except for an external connecting line and a main connecting line; and/or
The whole microstrip pattern layer of the ultra-wide stop band low-pass filter is centrosymmetric.
14. A method of preparing the microstrip pattern layer according to any one of claims 1 to 13, characterized in that the method comprises the steps of:
(1) Constructing a circuit pattern;
(2) Transferring the circuit pattern constructed in the step (1) onto the conductor layer at the top, and obtaining the microstrip pattern layer carved with the filter unit.
15. The method according to claim 14, wherein:
the step (1) further comprises: constructing a structure of a double hairpin filter unit according to the required cut-off frequency, cascading the filter units to enable the width of a stop band, the steepness of a band edge and the inhibition depth to meet the requirements, connecting the filter units with a feeder line through an external connecting line, and finally fine-adjusting the filter structure to enable the position of a pass band and the internal reflection of the band to meet the requirements; and/or
In the step (2), the method of transferring the circuit pattern is selected from one or more of the following: optical lithography, etching, electron beam lithography, laser direct writing.
16. The method of claim 15, wherein the optical lithography is selected from one or more of the following: ultraviolet lithography, deep ultraviolet lithography, and extreme ultraviolet lithography.
17. The ultra-wide stop band low-pass filter is characterized by comprising the following components in sequence from top to bottom:
the microstrip pattern layer according to any one of claims 1 to 13;
a dielectric layer; and
and a grounding conductor layer.
18. The ultra-wide stop band low pass filter of claim 17, wherein:
the microstrip pattern layer and/or the grounding conductor layer are/is constructed from one or more of the following materials: silver, copper, gold, aluminum, iridium barium copper oxide, dysprosium barium copper oxide, mercury barium copper oxide, thallium barium calcium copper oxide; and/or
The material of the dielectric layer is selected from one or more of the following: polytetrafluoroethylene, magnesium oxide, aluminum oxide, lanthanum aluminate.
19. The ultra-wide stop band low pass filter of claim 18, wherein:
the microstrip pattern layer and/or the grounding conductor layer are/is constructed from one or more of the following materials: iridium barium copper oxide, dysprosium barium copper oxide, mercury barium copper oxide, thallium barium calcium copper oxide; and/or
The material of the dielectric layer is selected from one or more of the following: magnesium oxide, aluminum oxide, lanthanum aluminate.
20. The ultra-wide stop band low pass filter of claim 19, wherein:
constructing the microstrip pattern layer and/or the grounding conductor layer to be iridium barium copper oxide or dysprosium barium copper oxide; and/or
The material of the dielectric layer is magnesium oxide or aluminum oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211164900.0A CN115513619B (en) | 2022-09-23 | 2022-09-23 | Microstrip pattern layer, preparation method thereof and ultra-wide stop band low-pass filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211164900.0A CN115513619B (en) | 2022-09-23 | 2022-09-23 | Microstrip pattern layer, preparation method thereof and ultra-wide stop band low-pass filter |
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| Publication Number | Publication Date |
|---|---|
| CN115513619A CN115513619A (en) | 2022-12-23 |
| CN115513619B true CN115513619B (en) | 2023-10-03 |
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