CN115511095A

CN115511095A - Design information output method and device of superconducting quantum bit structure with coupler

Info

Publication number: CN115511095A
Application number: CN202211244128.3A
Authority: CN
Inventors: 李飞宇; 晋力京
Original assignee: Beijing Baidu Netcom Science and Technology Co Ltd
Current assignee: Beijing Baidu Netcom Science and Technology Co Ltd
Priority date: 2022-10-11
Filing date: 2022-10-11
Publication date: 2022-12-23
Anticipated expiration: 2042-10-11
Also published as: CN115511095B

Abstract

The invention provides a method and a device for outputting design information of a superconducting quantum bit structure with a coupler, and relates to the technical field of quantum computing, in particular to the technical field of superconducting quantum chips. The specific implementation scheme is as follows: determining target parameter information corresponding to a quantum combination device, wherein the quantum combination device comprises two quantum bits and a coupler for coupling the two quantum bits, the target parameter information comprises a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structural layout of the quantum combination device; determining a target capacitance parameter combination based on the first characteristic parameter; determining a structural layout matched with the target capacitance parameter combination to obtain a target structural layout of the quantum combination device; and outputting target information, wherein the target information comprises the target structure layout.

Description

Design information output method and device of superconducting quantum bit structure with coupler

Technical Field

The disclosure relates to the technical field of quantum computing, in particular to the technical field of superconducting quantum chips, and specifically relates to a method and a device for outputting design information of a superconducting quantum bit structure with a coupler.

Background

There are generally three important core requirements at the design level for superconducting quantum chips containing coupling structures such as QCQ structures: 1) When the coupler is at a specific frequency, the coupling of the two qubits can be closed; 2) Adjusting the frequency of the coupler to enable the two qubits to achieve a greater coupling strength for implementing the dual-bit qubit gate; 3) At the coupling off point and the coupling on point, it is necessary to satisfy that the dispersion coupling of the qubit and the coupler is much smaller than the frequency difference between the two.

In the actual chip design process, the three are difficult to meet simultaneously, and elaborate design is required. At present, a coupling structure such as a QCQ structure is usually used as a black box in a design process, and an iterative method is continuously tried to design a chip layout.

Disclosure of Invention

The disclosure provides a design information output method and device of a superconducting qubit structure with a coupler.

According to a first aspect of the present disclosure, there is provided a design information output method for a superconducting qubit structure including a coupler, including:

determining target parameter information corresponding to a quantum combination device, wherein the quantum combination device comprises two quantum bits and a coupler for coupling the two quantum bits, the target parameter information comprises a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structural layout of the quantum combination device;

determining a target capacitance parameter combination based on the first characteristic parameter;

determining a structural layout matched with the target capacitance parameter combination to obtain a target structural layout of the quantum combination device;

outputting target information, wherein the target information comprises the target structure layout;

the first characteristic parameter is used for characterizing a layout structure of the quantum composite device, where the layout structure can reach a target coupling strength and has a coupling break point, the target coupling strength is a maximum equivalent coupling strength in equivalent coupling strengths between the two qubits when the quantum composite device satisfies a first constraint condition, and the first constraint condition includes: the dispersion ratio corresponding to the quantum combination device is larger than or equal to a preset target dispersion ratio, and the eigenfrequency of the coupler is smaller than or equal to a preset target eigenfrequency.

According to a second aspect of the present disclosure, there is provided a design information output device including a coupler superconducting qubit structure, comprising:

the device comprises a first determining module, a second determining module and a control module, wherein the first determining module is used for determining target parameter information corresponding to a quantum combination device, the quantum combination device comprises two quantum bits and a coupler used for coupling the two quantum bits, the target parameter information comprises a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structural layout of the quantum combination device;

a second determining module, configured to determine a target capacitance parameter combination based on the first characteristic parameter;

the third determining module is used for determining a structural layout matched with the target capacitance parameter combination to obtain a target structural layout of the quantum combination device;

the output module is used for outputting target information, and the target information comprises the target structure layout;

the first characteristic parameter is used for characterizing a layout structure of the quantum composite device, where the layout structure can reach a target coupling strength and has a coupling break point, where the target coupling strength is a maximum equivalent coupling strength among equivalent coupling strengths of the two qubits under a first constraint condition that the quantum composite device satisfies, and the first constraint condition includes: the dispersion ratio corresponding to the quantum combination device is larger than or equal to a preset target dispersion ratio, and the eigenfrequency of the coupler is smaller than or equal to a preset target eigenfrequency.

According to a third aspect of the present disclosure, there is provided an electronic device comprising:

at least one processor; and

a memory communicatively coupled to the at least one processor; wherein the content of the first and second substances,

the memory stores instructions executable by the at least one processor to enable the at least one processor to perform any one of the methods of the first aspect.

According to a fourth aspect of the present disclosure, there is provided a non-transitory computer readable storage medium having stored thereon computer instructions for causing a computer to perform any one of the methods of the first aspect.

According to a fifth aspect of the present disclosure, there is provided a computer program product comprising a computer program which, when executed by a processor, implements any of the methods of the first aspect.

The technology disclosed by the invention solves the problem that the design efficiency and accuracy of the superconducting quantum chip containing the coupling structure such as the QCQ structure are lower in the related technology, improves the layout design efficiency and accuracy of the superconducting quantum chip containing the coupling structure such as the QCQ structure, and can improve the performance of the chip.

It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present disclosure, nor do they limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following description.

Drawings

The drawings are included to provide a better understanding of the present solution and are not to be construed as limiting the present disclosure. Wherein:

fig. 1 is a schematic flow chart of a design information output method for a superconducting qubit structure including a coupler according to a first embodiment of the disclosure;

FIG. 2 is a schematic diagram of the logical relationship of the QCQ structure;

FIG. 3 is a graphical illustration of total coupling strength versus coupler frequency;

FIG. 4 is a schematic diagram of the principle of determining a target dispersion ratio and a target eigenfrequency;

FIG. 5 is a schematic diagram of an actual layout of a QCQ structure;

FIG. 6 is a schematic diagram of a superconducting quantum chip construction;

FIG. 7 is a schematic diagram of an equivalent circuit model for a layout;

FIG. 8 is a schematic overall flow chart of a design information output method for a superconducting qubit structure with couplers provided in the present disclosure;

fig. 9 is a schematic structural diagram of a design information output device including a coupler superconducting qubit structure in accordance with a second embodiment of the present disclosure;

FIG. 10 is a schematic block diagram of an example electronic device used to implement embodiments of the present disclosure.

Detailed Description

Exemplary embodiments of the present disclosure are described below with reference to the accompanying drawings, in which various details of embodiments of the present disclosure are included to assist understanding, and which are to be considered as merely exemplary. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the disclosure. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.

First embodiment

As shown in fig. 1, the present disclosure provides a method for outputting design information of a superconducting qubit structure including a coupler, comprising the steps of:

step S101: determining target parameter information corresponding to a quantum combination device, wherein the quantum combination device comprises two quantum bits and a coupler for coupling the two quantum bits, the target parameter information comprises a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structural layout of the quantum combination device.

In the embodiment, a design information output method for a superconducting quantum bit structure with a coupler relates to the technical field of quantum computing, in particular to the technical field of superconducting quantum chips, and can be widely applied to the layout design scene of the superconducting quantum chips. The method for outputting the design information of the coupler-containing superconducting qubit structure according to the embodiments of the disclosure may be performed by the device for outputting the design information of the coupler-containing superconducting qubit structure according to the embodiments of the disclosure. The design information output apparatus including a coupler superconducting qubit structure of the embodiments of the present disclosure may be configured in any electronic device to perform the design information output method including a coupler superconducting qubit structure of the embodiments of the present disclosure.

In this step, the quantum combination device may be a quantum device of a coupling structure, which may include two qubits and a coupler for coupling the two qubits, and the coupler may be an adjustable coupler, i.e., its eigenfrequency is adjustable. The qubit can be a superconducting qubit, which is a core element in a superconducting quantum chip and is composed of a capacitor and a superconducting Josephson junction. To achieve the eigenfrequency modulation of qubits, a superconducting josephson junction can be extended to a superconducting quantum interferometer (SQUID) formed by two josephson junctions in parallel.

In an alternative embodiment, the coupler may include a capacitor (e.g., the coupler may include a capacitor + SQUID), i.e., the quantum combining device may be a qubit-coupler-qubit (QCQ) structure. The QCQ structure usually employs capacitive coupling between two elements, and there are other coupling methods. This kind of structure can be very big to the fidelity that promotes quantum door.

In the actual chip design process, for the layout design of the quantum combination device, the following three core requirements are difficult to simultaneously meet, which are respectively: 1) When the coupler is at a specific frequency, the coupling of two quantum bits can be closed; 2) Adjusting the frequency of the coupler to enable the two qubits to achieve a greater coupling strength for implementing the dual-bit qubit gate; 3) At the coupling-off point and the coupling-on point, it needs to be satisfied that the dispersion coupling of the qubit and the coupler is much smaller than the frequency difference between the qubit and the coupler.

Moreover, because the conventional design flow usually adopts a method of continuously trying iteration, the method has certain blindness, and on the premise of preferentially meeting the first two necessary conditions, an optimal scheme for enabling the coupling strength to reach the maximum is difficult to obtain, so that the performance of the chip is limited.

Secondly, besides two constraints of coupling and disconnection points and dispersion coupling, other constraints exist in practice, for example, the frequency of the element has an upper limit constraint due to the process limitation of micro-nano processing. Under various constraints, how to design a coupling structure such as QCQ structure layout and element frequency to obtain the strongest equivalent coupling strength between qubits becomes a very important issue.

The embodiment aims to determine characteristic parameters (namely target characteristic parameters) which enable equivalent coupling strength between quantum bits to reach a limit value by fully considering constraint conditions such as existence of coupling break points, dispersion coupling between the quantum bits and a coupler, existence of an upper limit on coupler frequency and the like before the design of a coupling structure layout, and design a chip layout based on the determined characteristic parameters, so that the design efficiency and accuracy of the coupling structure layout are improved, and the performance of the chip is improved.

First, how to determine the target parameter information corresponding to the quantum composite device under the first constraint condition is described in detail below. Wherein the first constraint condition may include: the dispersion ratio corresponding to the quantum combination device is larger than or equal to the target dispersion ratio, the eigenfrequency of the coupler is smaller than or equal to the target eigenfrequency, and the eigenfrequency of the coupler is larger than the eigenfrequency of the qubit.

Specifically, the target dispersion ratio may be used to characterize the energy leakage of the qubit to the coupler, which may be a lower limit of the dispersion ratio that is acceptable for causing the energy leakage of the qubit to the coupler in the qubit combination device, i.e., the dispersion ratio between the qubit and the coupler cannot be lower than the target dispersion ratio in the process of adjusting the coupler frequency.

In the coupling structure of the qubit with the adjustable coupler, the equivalent coupling strength between two qubits cannot be increased without limit, and various constraints exist.

The lower limit of the dispersion ratio is one of the constraint conditions, which means that the dispersion coupling between the qubit and the coupler must be satisfied within the entire frequency adjustment range of the coupler in the quantum combination device, that is, the dispersion ratio between the qubit and the coupler has a lower limit, otherwise the leakage of the qubit energy occurs, and the fidelity of the quantum gate is seriously affected. Wherein, satisfying the dispersion coupling of the qubit and the coupler means: the coupling strength between the qubit and the coupler is much less than the difference between the two frequencies.

The target eigenfrequency may be an upper frequency limit of the coupler in the quantum composite device during the adjustment of the frequency, that is, the frequency of the coupler cannot exceed the target eigenfrequency during the adjustment of the frequency of the coupler. Wherein one of the constraints that the equivalent coupling strength between two qubits cannot be increased without limit includes: the limit of the adjusting frequency of the coupler is that the qubit and the eigenfrequency of the coupler cannot be increased without limit due to the limit of the superconducting quantum chip processing technology, and there is an upper frequency limit.

The target dispersion ratio and the target eigenfrequency corresponding to the quantum composite device input by the user can be obtained, and can also be determined manually, that is, the target dispersion ratio and the target eigenfrequency can be determined manually according to the structural layout required to be designed.

For example, the target eigenfrequency may be a maximum frequency set under the process limitation of the coupler, or may be a frequency at the coupling cut-off point, i.e., a frequency of the coupler when the equivalent coupling strength between two qubits is zero. The target dispersion ratio may be set to the lower frequency limit of the coupler

The dispersion ratio can also be set as the dispersion ratio at the coupling cut-off point, which is not specifically limited herein.

The determination of the target dispersion ratio and the target eigenfrequency is described below in a QCQ structure.

Fig. 2 is a schematic diagram of the logical relationship of the QCQ structure, which can set the structure of two qubits to be the same and the two qubits to be distributed symmetrically with respect to the coupler. It can be known that the QCQ structure includes three basic quantum devices of qubit-coupler-qubit, which are respectively denoted by Q1, C, and Q2, and the three quantum devices have direct coupling between each two quantum devices, which can be equivalent to total coupling between one qubit by following formula (1).

As shown in equation (1), g is the total coupling between qubits, which may be greater than 0, less than 0, or equal to 0.g _qq Is the direct coupling strength between qubits, g _qc Is the direct coupling strength between the qubit and the coupler is omega _q Is the eigenfrequency, omega, of a qubit _c Is the eigenfrequency of the coupler. The frequency of the qubit and the frequency of the coupler can be adjusted through experimental manipulation, and the change of the total coupling strength can be realized by adjusting the frequency of the coupler.

Total coupling strength g and frequency omega of coupler _c The rule between the two is shown in fig. 3, and it can be seen from fig. 3 that the frequency of the coupler cannot be always increased due to the process limitation, so that there is an upper limit on the frequency of the coupler

And because the dispersion coupling between the qubit and the coupler needs to be satisfied, the dispersion ratio can be defined based on the dispersion coupling, the two can be in reciprocal relation, the dispersion coupling requires that the coupling strength between the qubit and the coupler is far smaller than the frequency difference between the qubit and the coupler, and under the condition that the frequency of the qubit is determined, the lower limit of the frequency of the coupler is lower

The dispersion ratio is minimized, and the lower limit of the dispersion ratio is located

To (3). Accordingly, the total coupling strength is limited by these constraints, which cannot be increased without limit, and a limit may exist.

In an alternative embodiment, another constraint, namely a turn-off condition, may exist for the coupling structure, which means that the coupling structure, such as the QCQ structure, is satisfied that at a certain coupler frequency, the coupling between two qubits can be turned off, that is, the equivalent coupling strength is zero, and the coupler frequency is at that point.

As shown in fig. 3, in order to satisfy the existence of the coupling off-point, the frequency interval in which the coupler operates may satisfy ω _c ＞ω _q 。

For qubit coupling, the absolute magnitude of the coupling strength is of interest, so g < 0 and g > 0 are both considered coupling-on. Therefore, according to the structural layout required to be designed, the coupling opening point is selected under two conditions and is respectively positioned behind the coupling closing point and in front of the coupling closing point, and the target dispersion ratio and the target eigenfrequency can be artificially determined according to the structural layout required to be designed.

The larger frequency point of two key frequency points of the adjustable coupler and the dispersion ratio thereof are recorded as omega ₀ ,β ₀ The smaller frequency point and the dispersion ratio thereof are denoted as omega ₁ ,β ₁ Then, the constraint condition of the quantum composite device may be: there is an upper limit omega on the coupler frequency ₀ There is a lower bound beta on the ratio of qubits to the dispersion of the coupler ₁ The coupler frequency being greater than the qubit frequency, i.e. ω _c ＞ω _q 。

As shown in the left diagram of FIG. 4, in the structural layout to be designed, the target eigenfrequency can be set at the upper frequency limit of the coupler

The target dispersion ratio may be set at the coupling cut-off point, and in this structural layout, the total coupling strength is greater than 0 in adjusting the coupler frequency. As shown in the right diagram of FIG. 4, all that is requiredIn the structural layout to be designed, the target eigenfrequency can be set at the coupling turn-off point, and the target dispersion ratio can be set at the lower limit of the coupler frequency

And the total coupling strength can be a lower limit of dispersion ratio acceptable for energy leakage of a quantum bit to the coupler in the quantum combination device, and in the structural layout, the total coupling strength is less than 0 in the process of adjusting the frequency of the coupler.

The design of the coupling structure, such as a QCQ structure, may comprise a layout design. The part is that a group of capacitance parameters (marked as a set C) corresponds to the equivalent circuit model ⁱ _group And the superscript i represents that the set contains i capacitance parameters), and the self-capacitance of the coupler and the qubit and the mutual capacitance between every two couplers are contained. Thus. The optimal parameter design scheme of the layout is equivalent to the optimal solution of a group of capacitance parameter combinations.

The layout is completely fixed along with the processing of the superconducting quantum chip, and the layout is not changeable after the design is determined, namely the capacitance parameter combination is not changeable after the determination. The design scheme of the optimal parameters of the layout can be equal to a group of optimal solution equations of capacitance parameter combinations, as long as the capacitance parameter combinations meeting the equations are optimal, the coupling strength can reach the same limit value, and the structural layout can have coupling breaking points.

The target coupling strength may be a maximum equivalent coupling strength that can be achieved in equivalent coupling strengths between two qubits of the quantum combination device under a constraint condition, where the equivalent coupling strength between the two qubits is represented by an absolute value, the equivalent coupling strength between the qubits is an absolute value of total coupling g between the qubits, the equivalent coupling strengths between the two qubits are both greater than or equal to zero, and the equivalent coupling strength may be the total coupling between the two qubits.

That is to say, under the condition that the quantum combination device satisfies the first constraint condition, no matter how the structural layout of the quantum combination device of the coupling structure is designed, and no matter how the eigenfrequency of the qubit and the coupler is designed, the coupling strength that can be achieved by the quantum combination device does not exceed the target coupling strength.

The first characteristic parameter can represent the domain structure of the quantum combination device, which can reach the target coupling strength and has the coupling-off point, and the domain structure is characterized by the capacitance parameter combination, so the first characteristic parameter is a group of optimal solution equations of the capacitance parameter combination corresponding to the domain structure of the quantum combination device, as long as the capacitance parameter combination satisfying the equations is optimal, the coupling strength can reach the same limit value, and the coupling-off point can also exist in the domain structure.

The first characteristic parameter may be characterized by a first variable with respect to a structural layout of the quantum composite device, and may be determined based on constraint parameters (such as a target dispersion ratio and a target eigenfrequency) in a first constraint condition. The first variable may include two layout parameters, which are a first layout parameter and a second layout parameter respectively, where the first layout parameter and the second layout parameter represent all information of a layout, and are determined by a combination of capacitance parameters, and as long as values of the first layout parameter and the second layout parameter, at which a quantum combination device can reach a target coupling strength and has a turn-off coupling point, are determined, a set of optimal solution equations of the combination of capacitance parameters is determined, that is, a first characteristic parameter is obtained, and the first characteristic parameter may include values of the first layout parameter and the second layout parameter.

In an alternative embodiment, the related quantity ω of the first constraint may be introduced ₀ ,β ₁ And obtaining a function expression of the total coupling strength g under the first constraint condition through mathematical techniques such as variable substitution. By deeply analyzing the property of the function expression, the values of the first layout parameter and the second layout parameter when the total coupling strength g is maximum can be given, so that the first characteristic parameter can be obtained.

Step S102: based on the first characteristic parameter, a target capacitance parameter combination is determined.

In this step, in an optional implementation manner, the layout model may be modeled according to C in the layout ⁱ _group Given the additional amount of capacitancei-2 capacitance constraint equations (for example, some capacitance parameter values can be directly given), and a set of determined optimal capacitance parameter combination C is obtained by combining the optimal solution equation set and solving _best 。

Therefore, under the condition that capacitance constraint conditions given by users are different, the obtained capacitance parameter combinations are different, but the obtained capacitance parameter combinations can enable the quantum combination device to achieve target coupling strength, and a structural layout designed based on the capacitance parameter combinations can have coupling break points, so that multiple groups of optimal schemes can be given, and the design freedom is greatly improved.

In another alternative embodiment, the target capacitance parameter combination may also be determined based on the first characteristic parameter and a preset capacitance constraint condition.

Step S103: and determining a structural layout matched with the target capacitance parameter combination to obtain a target structural layout of the quantum combination device.

In the step, structural layout iteration can be performed based on a target capacitance parameter combination in a capacitance simulation iteration mode to determine a structural layout matched with the target capacitance parameter combination, the structural layout is a target structural layout of the quantum combination device, the quantum combination device under the target structural layout can reach a limit value of equivalent coupling strength under the frequency regulation of the quantum bit and the coupler, and the equivalent coupling strength before the two quantum bits can be closed through the frequency regulation.

Step S104: and outputting target information, wherein the target information comprises the target structure layout.

In this step, the target structure layout may be output, and while the target structure layout is output, the frequency of the qubit and the coupler when the quantum combination device reaches the limit value of the coupling strength may also be output, and the frequency of the qubit and the coupler when the coupling of the quantum combination device is turned off by the output.

In the embodiment, by fully considering the constraint conditions such as the existence of a coupling breakpoint, the dispersion coupling of the qubits and the coupler, the existence of an upper limit on the frequency of the coupler, and the like, the characteristic parameters (namely target characteristic parameters) which enable the equivalent coupling strength between the qubits to reach a limit value are determined, and the design of the chip layout is performed based on the determined characteristic parameters, so that the black box iteration process in the design process of the coupling structure such as a QCQ structure is directly avoided, repeated and blind attempts and iteration are not needed, the blindness in the design process can be removed to the greatest extent, the standardization and the automation of the chip design process are facilitated, and the design efficiency and the accuracy of the coupling structure layout can be improved. Meanwhile, the equivalent coupling strength between the quantum bits can reach a limit value under the first constraint condition, the double-bit quantum gating speed is higher, and the chip performance is stronger.

Moreover, a theoretical optimal solution is given based on a coupling structure such as a QCQ structure under a first constraint condition, so that the equivalent coupling strength among quantum bits approaches to a limit value, and the research and development of a high-performance quantum chip are facilitated; and a plurality of groups of optimal schemes can be provided, and the design freedom degree is greatly improved. The application range is wide, and the device is suitable for any frequency interval based on capacitive coupling and coupler to work in omega _c ＞ω _q The quantum bit coupling structure containing the adjustable coupler framework can adopt the optimal scheme of characteristic parameters to design the superconducting quantum chip no matter how the actual configuration of the element is.

Optionally, the step S102 specifically includes:

constructing a second constraint condition of a target quantity based on the quantity of capacitors corresponding to a preset layout structure, wherein the second constraint condition is used for constraining capacitor parameters corresponding to a quantum combination device structure layout, and the target quantity is larger than or equal to a value obtained by subtracting the quantity of the parameters in the first characteristic parameters from the quantity of the capacitors;

and solving the capacitance parameter corresponding to the preset layout structure based on the first characteristic parameter and the second constraint condition to obtain the target capacitance parameter combination.

In this embodiment, the preset layout structure may refer to a layout structure that is expected to need to be designed, for example, one metal plate may be a qubit during design, or two metal plates may be a qubit, and the number of capacitors corresponding to the corresponding layouts is different.

Can be modeled according to the layout C ⁱ _group Given additional i-2 capacitance constraint equations (e.g., certain capacitance parameter values may be directly given), and solving in combination with the optimal solution equation set to obtain a set of determined optimal capacitance parameter combinations C _best 。

For example, for a layout in which one metal plate is a qubit, the number of capacitors may be 4, and at least two second constraints may be additionally constructed, for example, given the second constraints

(megahertz), the second constraint being an important performance indicator of the qubit, h being the Planckian constant, and given a second constraint C _qc In combination with the first characteristic parameter, the optimal capacitance parameter combination C corresponding to the layout structure can be obtained by solving =5fF (femtofarad) _best . In this way, determination of an optimal capacitance parameter combination can be achieved.

For example, selecting appropriate constraint condition values, and setting the lower limit of the dispersion ratio and the upper limit of the device frequency to be beta respectively ₁ ＝8,ω ₀ =15GHz (gigahertz), the values of the first layout parameter a and the second layout parameter B can be determined (the determination of which will be described in detail in the following embodiments), respectively:

A(C _0q ,C _0c ,C _qq ,C _qc )＝1.2406；

B(C _0q ,C _0c ,C _qq ,C _qc )＝409.40288；

two sets of constraints can be freely specified to obtain a determined set of optimal capacitance parameter combinations. One of the constraints is specified here as

(megahertz), this condition being an important performance index of the qubit, h being the planck constant; secondly, one can choose to give any one of the capacitance values, given C _qc ＝5fF (flying method). Combining the optimal solution equation sets of A and B, an equation set composed of four constraint equations can be obtained, as shown in the following formula (2).

Solving the system of equations to obtain an optimal set of capacitance parameter composition: c _0c ＝29.8205fF,C _0q ＝60.1912fF,C _qc ＝5fF,C _qq ＝0.154758fF。

Moreover, under the condition that the capacitance constraint conditions given by a user are different, the obtained capacitance parameter combinations are also different, but the obtained capacitance parameter combinations can enable the quantum combination device to achieve the target coupling strength, and a structural layout designed based on the capacitance parameter combinations can have coupling breakpoints, so that multiple groups of optimal schemes can be given, and the design freedom is greatly improved.

Optionally, the second constraint condition is any one of the following conditions:

any capacitance parameter in the capacitance parameter combination corresponding to the quantum combination device;

any capacitance energy in the capacitance energy combination determined based on the capacitance parameter combination in the Hamiltonian of the quantum combination device.

The second constraint may be any capacitance parameter, such as C _qc =5fF (in flight), but can also be any capacitive energy, e.g.

Greatly improving the degree of freedom of design.

Optionally, the step S103 specifically includes:

determining an initial structure layout of the quantum combination device;

performing capacitance simulation on the initial structure layout to obtain a first capacitance parameter combination corresponding to the quantum combination device;

determining a similarity between the first capacitance parameter combination and the target capacitance parameter combination;

and under the condition that the similarity is smaller than a preset threshold value, performing iterative adjustment on the initial structure layout to obtain the target structure layout corresponding to the capacitance parameter combination of which the similarity with the target capacitance parameter combination is larger than or equal to the preset threshold value.

In this embodiment, structural layout iteration may be performed based on the target capacitance parameter combination in a capacitance simulation iteration manner, specifically, an initial structural layout may be designed, and a corresponding capacitance parameter combination may be obtained through capacitance simulation, where the initial structural layout may be as shown in fig. 5.

In fig. 5, the size units are all micrometers, wherein the shaded parts are superconducting metals, the black parts are schematic positions of SQUID structures, and the white parts are etched parts (the basic chip structure is shown in fig. 6).

The cross-shaped metal polar plates and the SQUIDs at the two sides are two quantum bits respectively, the T-shaped metal polar plate and the SQUID at the middle are adjustable couplers, and the metal at the outer sides is grounding metal. The length of the transverse metal arm of the cross-shaped polar plate is 310 micrometers (um), the length of the longitudinal metal arm is 141um, the widths of the two metal arms are both 20um, and the ground distance is both 10um; the length of the transverse metal arm of the T-shaped polar plate is 163um, the width of the transverse metal arm is 25um, the distance between the left transverse metal arm and the right transverse metal arm is 10um, the distance between the upper longitudinal metal arm and the ground and the distance between the transverse metal arm of the cross-shaped polar plate are both 5um, the length of the longitudinal metal arm (measured from the lower boundary of the transverse metal arm) is 60um, the width of the longitudinal metal arm is 20um, and the distance between the longitudinal metal arm and the ground is 10um; the distance between the two crossed polar plates is 51um.

The layout can be modeled into an equivalent circuit model as shown in FIG. 7, and the self-capacitances of the qubits are all C _0q The coupling capacitors with the coupler are all C _qc (ii) a The self-capacitance of the coupler is C _0c Coupling capacitance between qubits is C _qq 。

By performing capacitance simulation on the structure layout in fig. 5, that is, performing capacitance simulation based on the equivalent circuit model shown in fig. 7, corresponding first capacitance parameter combinations, each C' _0c ＝29.6534fF,C′ _0q ＝60.0929fF,C′ _qc ＝5.07fF,C′ _qq ＝0.1548fF。

Comparison { C' _0c ,C′ _0q ,C′ _qc ,C′ _qq And { C } _0c ,C _0q ,C _qc ,C _qq And obtaining the similarity between the first capacitance parameter combination and the target capacitance parameter combination, and if the similarity characteristics are consistent with each other, namely the similarity is greater than or equal to a preset threshold value, setting the structure layout of the iteration as the target structure layout. C is' _0c ＝29.6534fF,C′ _0q ＝60.0929fF,C′ _qc ＝5.07fF,C′ _qq =0.1548fF and C _0c ＝29.8205fF,C _0q ＝60.1912fF,C _qc ＝5fF,C _qq If =0.154758fF is matched, it may be determined that the layout shown in fig. 5 is the target structure layout.

If the similarity is smaller than the preset threshold, iterative adjustment can be performed on the structure layout of the iteration (the structure layout of the iteration is the initial layout), namely, capacitance simulation is continued after the layout structure is adjusted until the capacitance parameter combination corresponding to the adjusted structure layout is matched with the target capacitance parameter combination, and the iteration is finished at this moment. The preset threshold may be set according to an actual situation, and is not specifically limited herein.

Therefore, the design of the optimal layout of the quantum combination device can be realized based on the combination of the target capacitance parameters.

Optionally, step S101 specifically includes:

acquiring the target dispersion ratio;

determining the first characteristic parameter based on the target dispersion ratio and a predetermined first relation;

wherein the first relationship comprises: a relationship of a first variable related to a structural layout of the quantum composite device to the target dispersion ratio and a predetermined first target value.

In this embodiment, the first variable related to the capacitance energy in the hamiltonian may be determined from the hamiltonian of the equivalent circuit model of the quantum composite device. Wherein, the quantum composite device of QCQ structure has relative electricity in Hamiltonian HForm H of volumetric energy _C As shown in the following formula (3).

In the above formula (3), the capacity energy E _C1 ,E _C2 ,E _Cc ,E _1c ,E _2c ,E ₁₂ Determined only by the layout of the quantum composite device, n ₁ ,n ₂ ,n _c Respectively, the two qubits and the dimensionless generalized momentum of their couplers. E _C1 ,E _C2 For indicating the dissonance of two qubits, E, respectively _1c ,E _2c Indicating the coupling energy of a qubit of the two qubits with the coupler, E, respectively ₁₂ Indicating the coupling energy between two qubits, E _Cc For indicating the dissonance of the coupler. Wherein, E _C1 ＝E _C2 ＝E _Cq 。

In an alternative embodiment, the first layout parameter may be

The second layout parameter may be

The first layout parameter and the second layout parameter can also be other expressions, such as A and

is a multiple relation, B and

the relationship is not particularly limited.

The value of the first layout parameter may be determined based on a relationship of the first layout parameter to the target dispersion ratio and a predetermined first target value, such as determining the value of the first layout parameter as the first target value. And, the value of the second layout parameter may be determined based on a relationship between the second layout parameter and, the target dispersion ratio and a predetermined first target value, for example, the value of the second layout parameter may be determined based on a relationship between the second layout parameter and the target dispersion ratio. In this way, a determination of the first characteristic parameter can be achieved.

Optionally, the determining the first characteristic parameter based on the target dispersion ratio and a predetermined first relationship includes:

determining the value of the first layout parameter as the first target value;

determining a second target value based on the target dispersion ratio and the relation between the second layout parameter and the target dispersion ratio;

wherein the first characteristic parameter includes the first target value and the second target value.

In this embodiment, under the first constraint condition that the target dispersion ratio, the target eigenfrequency, and the eigenfrequency of the coupler are greater than the eigenfrequency of the qubit, the determined first target value may have two values, which are 1.2406 and 1.83757, respectively, that is, the difference between a and the value is smaller than the preset threshold, and the difference between a and the value is small. The first target value may also be a value, for example, the default acquired target eigenfrequency is the frequency of the coupling-off point, and the design of the structural layout is performed based on the constraint condition.

In an optional implementation manner, the number of the first target values is two, the first target value corresponding to the layout structure with the target coupling strength smaller than zero is different from the first target value corresponding to the layout structure with the target coupling strength greater than zero, and the determining the value of the first layout parameter as the first target value includes:

and determining the value of the first layout parameter as a first target value corresponding to a preset layout structure.

I.e., the value of a when the target coupling strength is less than zero is different from the value of a when the target coupling strength is greater than zero. If the coupling opening point of the structural layout (i.e., the layout of the preset layout structure) of the quantum composite device desired to be designed is located before the coupling closing point, that is, g is less than 0 as shown in the right diagram of fig. 4, at this time, the first target value may be about 1.2406. If the coupling opening point of the structural layout of the quantum composite device desired to be designed is located after the coupling closing point, as shown in the left diagram of fig. 4, g is greater than 0, at this time, the first target value may be about 1.83757. The first relationship is shown in the following formula (4).

Accordingly, in

In the case of (3), when the target eigenfrequency is at the coupling-off point, the value of the first layout parameter is determined to be 1.2406, and when the target eigenfrequency is at the coupling-on point, the value of the first layout parameter is determined to be 1.83757.

In that

In this case, the relationship between the second layout parameter and the target dispersion ratio may be

The target dispersion ratio may be substituted into the relation, and the second target value may be determined.

In this way, a determination of the first characteristic parameter can be achieved.

It should be noted that, the first target value and the relationship between the second layout parameter and the target dispersion ratio may be predetermined and verified.

In an alternative embodiment, A and B are C ⁱ _group Can be used for introducing a first constraint condition related parameter omega based on the expression of the total coupling strength of the quantum composite device ₀ ,β ₁ And obtaining a function expression of the total coupling strength g under the first constraint condition through mathematical techniques such as variable substitution. By deeply analyzing the property of the function expression, the A, B and omega when the total coupling strength g takes the maximum value can be given _q 、ω ₁ The optimal solution of (1).

Wherein, the optimal solution of A and B gives two constraint equations of the optimal capacitance parameter combination, and omega _q 、ω ₁ Plus a given ω ₀ The optimal solution of the frequency of the device is formed by the eigenfrequency of the quantum device, the frequency of the coupling opening point and the frequency of the coupling closing point.

Optionally, the first layout parameter is

The second layout parameter is

Wherein, E _qq For the coupling energy between two qubits, E _qc Coupling energy of qubit and coupler, E _Cq For characterizing the dissonance of qubits, E _Cc For characterizing the dissonance of the coupler.

Optionally, the number of the first target values is two, the first target value corresponding to the layout structure with the target coupling strength smaller than zero is different from the first target value corresponding to the layout structure with the target coupling strength larger than zero, and determining the value of the first layout parameter as the first target value includes:

Optionally, the target parameter information further includes a second characteristic parameter, where the second characteristic parameter includes a first target eigenfrequency and a second target eigenfrequency, the first target eigenfrequency is an eigenfrequency of the qubit and the coupler when the quantum composite device reaches a target coupling strength, and the second target eigenfrequency is an eigenfrequency of the qubit and the coupler when the quantum composite device is at a coupling disconnection point;

the output target information includes:

and outputting the target structure layout, the first target eigenfrequency and the second target eigenfrequency.

In this embodiment, the design of the coupling structure, such as the QCQ structure, may also include frequency design. In the equivalent circuit model, the qubit frequency ω is contained _q And two key frequency points omega of the coupler ₀ And ω ₁ . The frequency of the quantum bit and the frequency of the coupler can be adjusted and changed through the control of the superconducting quantum chip.

In this embodiment, the characteristic parameter optimal solution for designing the coupling structure, such as the QCQ structure, may include an optimal solution equation set of a capacitance parameter combination and a corresponding device frequency optimal solution, that is, a second characteristic parameter.

The first target eigenfrequency may be an eigenfrequency of the qubit and the coupler when the quantum composite device reaches the target coupling strength, and in an alternative embodiment, the first target eigenfrequency may include ω _q And ω ₁ 。

The second target eigenfrequency may be an eigenfrequency of the qubit and the coupler when the quantum composite device turns off the coupling dots. In an alternative embodiment, the second target eigenfrequency may include ω _q And omega ₀ I.e. the second characteristic parameter may comprise ω _q 、ω ₀ And ω ₁ Three frequency points.

The overall flow diagram of the design information output method of the coupler-containing superconducting qubit structure is shown in fig. 8, and the target structure layout and the optimal frequency parameter combination (i.e., ω (omega)) can be output simultaneously _q 、ω ₀ And ω ₁ Three frequency points). Thus, the design efficiency of the superconducting quantum chip can be further improved.

Optionally, step S101 further includes:

acquiring the target eigenfrequency;

determining the first target eigenfrequency and the second target eigenfrequency based on the target eigenfrequency, a predetermined relationship between the eigenfrequency of the qubit and the target eigenfrequency, and a relationship between the eigenfrequency of the coupler and the target eigenfrequency.

Optionally, the target eigenfrequency may be obtained, and the concept and the obtaining manner of the target eigenfrequency are described in detail in the above embodiments, which are not described herein again.

May be based on the target eigenfrequency and the relationship of the eigenfrequency of the qubit to the target eigenfrequency, i.e., ω _q ≈0.440382ω ₀ Determining the eigenfrequency of the qubit based on the relationship of the eigenfrequency of the coupler to the target eigenfrequency, i.e. ω ₁ ≈0.652292ω ₀ The eigenfrequency of the coupler at the coupling-on point or the coupling-off point is determined.

Wherein, starting from the expression of the total coupling strength of the quantum composite device, the first constraint condition related parameter omega can be introduced ₀ ,β ₁ And obtaining a function expression of the total coupling strength g under the first constraint condition through mathematical techniques such as variable substitution. By deeply analyzing the property of the function expression, the A, B and omega when the total coupling strength g takes the maximum value can be given _q 、ω ₁ I.e. ω can also be obtained _q ≈0.440382ω ₀ And ω ₁ ≈0.652292ω ₀ The relationship (2) of (c). In this manner, the determination of the first target eigenfrequency and the second target eigenfrequency may be achieved.

For example, for the above example, the appropriate constraint values are selected, and the lower limit of the dispersion ratio and the upper limit of the device frequency are respectively given as β ₁ ＝8,ω ₀ =15GHz (gigahertz), the optimal solution equation set for the capacitance parameter combination is (taking g < 0):

A(C _0q ,C _0c ,C _qq ,C _qc )＝1.2406；

B(C _0q ,C _0c ,C _qq ,C _qc )＝6.39692，

according to the relationship between the frequency and the target eigenfrequency, the following can be obtained:

qubit frequency: omega _q ＝0.440382，ω ₀ ＝6.60573GHz；

Coupling opening pointCoupler frequency: omega ₁ ＝0.652292，ω ₀ ＝9.78438GHz；

Coupling turn-off point coupler frequency: omega ₀ ＝15GHz。

Optionally, in a case that the target eigenfrequency is determined to be the first target eigenfrequency, an eigenfrequency determined based on a relationship between an eigenfrequency of a coupler and the target eigenfrequency is the second target eigenfrequency;

in a case where the target eigenfrequency is determined to be the second target eigenfrequency, an eigenfrequency determined based on a relationship of an eigenfrequency of a coupler to the target eigenfrequency is the first target eigenfrequency.

In this embodiment, the frequencies of the coupling opening point and the coupling closing point may be determined according to a structural layout (i.e., a layout of a preset layout structure) to be designed. There are two cases, case one: based on ω when the target eigenfrequency is determined as the frequency of the coupling opening point ₁ ≈0.652292ω ₀ The determined frequency is the frequency of the coupling opening point. Case two: based on ω when the target eigenfrequency is determined to be the frequency of the coupling off point ₁ ≈0.652292ω ₀ The determined frequency is the frequency of the coupling opening point. Thus, the design of the structural layout can be flexibly realized.

Second embodiment

As shown in fig. 9, the present disclosure provides a design information output device 900 including a coupler superconducting qubit structure, comprising:

a first determining module 901, configured to determine target parameter information corresponding to a quantum combination device, where the quantum combination device includes two qubits and a coupler for coupling the two qubits, where the target parameter information includes a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structure layout of the quantum combination device;

a second determining module 902, configured to determine a target capacitance parameter combination based on the first characteristic parameter;

a third determining module 903, configured to determine a structure layout matched with the target capacitance parameter combination, so as to obtain a target structure layout of the quantum combination device;

an output module 904, configured to output target information, where the target information includes the target structure layout;

Optionally, the second determining module 902 includes:

the construction submodule is used for constructing second constraint conditions of target quantity based on the quantity of capacitors corresponding to a preset layout structure, the second constraint conditions are used for constraining capacitor parameters corresponding to a quantum combination device structure layout, and the target quantity is larger than or equal to a value obtained by subtracting the quantity of parameters in the first characteristic parameters from the quantity of capacitors;

and the solving submodule is used for solving the capacitance parameters corresponding to the preset layout structure based on the first characteristic parameters and the second constraint conditions to obtain the target capacitance parameter combination.

any capacitance parameter in the capacitance parameter combinations corresponding to the quantum combination device;

Optionally, the third determining module 904 includes:

the first determining submodule is used for determining an initial structure layout of the quantum combination device;

the capacitance simulation submodule is used for carrying out capacitance simulation on the initial structure layout to obtain a first capacitance parameter combination corresponding to the quantum combination device;

a second determining submodule for determining a similarity between the first capacitance parameter combination and the target capacitance parameter combination;

and the iteration adjustment submodule is used for performing iteration adjustment on the initial structure layout under the condition that the similarity is smaller than a preset threshold value so as to obtain the target structure layout corresponding to the capacitance parameter combination with the similarity larger than or equal to the preset threshold value between the target capacitance parameter combination and the initial structure layout.

Optionally, the first determining module 901 includes:

the first obtaining sub-module is used for obtaining the target dispersion proportion;

a third determining submodule, configured to determine the first characteristic parameter based on the target dispersion ratio and a predetermined first relationship;

wherein the first relationship comprises: and the relation between the first variable of the structural layout of the quantum combination device and the target dispersion proportion and a predetermined first target value.

Optionally, the first variable includes a first layout parameter and a second layout parameter, and the third determining sub-module includes:

a first determination unit configured to determine a value of the first layout parameter as the first target value;

the second determining unit is used for determining a second target value based on the target dispersion proportion and the relation between the second layout parameter and the target dispersion proportion;

Optionally, the first layout parameter is

The second layout parameter is

Wherein E is _qq For the coupling energy between two qubits, E _qc Coupling energy of qubits and couplers, E _Cq For characterizing the dissonance of qubits, E _Cc For characterizing the dissonance of the coupler.

Optionally, the number of the first target values is two, and the first target value corresponding to the layout structure with the target coupling strength smaller than zero is different from the first target value corresponding to the layout structure with the target coupling strength larger than zero;

the first determining unit is specifically configured to determine the value of the first layout parameter as a first target value corresponding to a preset layout structure.

Optionally, the target parameter information further includes a second characteristic parameter, where the second characteristic parameter includes a first target eigenfrequency and a second target eigenfrequency, the first target eigenfrequency is an eigenfrequency of the qubit and the coupler when the quantum composite device reaches a target coupling strength, and the second target eigenfrequency is an eigenfrequency of the qubit and the coupler when the quantum composite device is at a coupling off point;

the output module 904 is specifically configured to output the target structure layout, the first target eigenfrequency, and the second target eigenfrequency.

Optionally, the first determining module 901 further includes:

the second acquisition submodule is used for acquiring the target eigenfrequency;

a fourth determining submodule, configured to determine the first target eigenfrequency and the second target eigenfrequency based on the target eigenfrequency, a predetermined relationship between the eigenfrequency of the qubit and the target eigenfrequency, and a relationship between the eigenfrequency of the coupler and the target eigenfrequency.

Optionally, in a case where the target eigenfrequency is determined to be the first target eigenfrequency, the eigenfrequency determined based on the relationship between the eigenfrequency of the coupler and the target eigenfrequency is the second target eigenfrequency;

The design information output apparatus 900 including the coupler superconducting qubit structure according to the present disclosure can implement various processes implemented by the embodiment of the design information output method including the coupler superconducting qubit structure, and can achieve the same beneficial effects, and for avoiding repetition, the details are not repeated here.

In the technical scheme of the disclosure, the processes of collecting, storing, using, processing, transmitting, providing, disclosing and the like of the personal information of the related user all accord with the regulations of related laws and regulations, and do not violate the common customs of public order.

The present disclosure also provides an electronic device, a readable storage medium, and a computer program product according to embodiments of the present disclosure.

FIG. 10 shows a schematic block diagram of an example electronic device that may be used to implement embodiments of the present disclosure. Electronic devices are intended to represent various forms of digital computers, such as laptops, desktops, workstations, personal digital assistants, servers, blade servers, mainframes, and other appropriate computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions, are meant to be examples only, and are not meant to limit implementations of the disclosure described and/or claimed herein.

As shown in fig. 10, the apparatus 1000 includes a computing unit 1001 that can perform various appropriate actions and processes according to a computer program stored in a Read Only Memory (ROM) 1002 or a computer program loaded from a storage unit 1008 into a Random Access Memory (RAM) 1003. In the RAM 1003, various programs and data necessary for the operation of the device 1000 can also be stored. The calculation unit 1001, the ROM 1002, and the RAM 1003 are connected to each other by a bus 1004. An input/output (I/O) interface 1005 is also connected to bus 1004.

A number of components in device 1000 are connected to I/O interface 1005, including: an input unit 1006 such as a keyboard, a mouse, and the like; an output unit 1007 such as various types of displays, speakers, and the like; a storage unit 1008 such as a magnetic disk, optical disk, or the like; and a communication unit 1009 such as a network card, a modem, a wireless communication transceiver, or the like. The communication unit 1009 allows the device 1000 to exchange information/data with other devices through a computer network such as the internet and/or various telecommunication networks.

Computing unit 1001 may be a variety of general and/or special purpose processing components with processing and computing capabilities. Some examples of the computing unit 1001 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various dedicated Artificial Intelligence (AI) computing chips, various computing units running machine learning model algorithms, a Digital Signal Processor (DSP), and any suitable processor, controller, microcontroller, and so forth. The calculation unit 1001 executes the respective methods and processes described above, such as the design information output method of the coupler-containing superconducting qubit structure. For example, in some embodiments, the design information output method including the coupler superconducting qubit structure may be implemented as a computer software program tangibly embodied in a machine-readable medium, such as the storage unit 1008. In some embodiments, part or all of the computer program may be loaded and/or installed onto device 1000 via ROM 1002 and/or communications unit 1009. When loaded into RAM 1003 and executed by computing unit 1001, a computer program may perform one or more steps of the design information output method for a coupler-containing superconducting qubit structure described above. Alternatively, in other embodiments, the computational unit 1001 may be configured by any other suitable means (e.g., by means of firmware) to perform the design information output method of the coupler-containing superconducting qubit structure.

Various implementations of the systems and techniques described here above may be implemented in digital electronic circuitry, integrated circuitry, field Programmable Gate Arrays (FPGAs), application Specific Integrated Circuits (ASICs), application Specific Standard Products (ASSPs), system on a chip (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and/or combinations thereof. These various embodiments may include: implemented in one or more computer programs that are executable and/or interpretable on a programmable system including at least one programmable processor, which may be special or general purpose, receiving data and instructions from, and transmitting data and instructions to, a storage system, at least one input device, and at least one output device.

Program code for implementing the methods of the present disclosure may be written in any combination of one or more programming languages. These program code may be provided to a processor or controller of a general purpose computer, special purpose computer, or other programmable data processing apparatus, such that the program code, when executed by the processor or controller, causes the functions/acts specified in the flowchart and/or block diagram to be performed. The program code may execute entirely on the machine, partly on the machine, as a stand-alone software package partly on the machine and partly on a remote machine or entirely on the remote machine or server.

In the context of this disclosure, a machine-readable medium may be a tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. The machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

To provide for interaction with a user, the systems and techniques described here can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to a user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which a user can provide input to the computer. Other kinds of devices may also be used to provide for interaction with a user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form, including acoustic, speech, or tactile input.

The systems and techniques described here can be implemented in a computing system that includes a back-end component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such back-end, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local Area Networks (LANs), wide Area Networks (WANs), and the Internet.

The computer system may include clients and servers. A client and server are generally remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other. The server may be a cloud server, a server of a distributed system, or a server with a combined blockchain.

It should be understood that various forms of the flows shown above, reordering, adding or deleting steps, may be used. For example, the steps described in the present disclosure may be executed in parallel or sequentially or in different orders, and are not limited herein as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved.

The above detailed description should not be construed as limiting the scope of the disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A design information output method of a superconducting qubit structure with a coupler comprises the following steps:

2. The method of claim 1, wherein the determining a target capacitance parameter combination based on the first characteristic parameter comprises:

3. The method of claim 2, wherein the second constraint is any one of:

4. The method according to claim 1, wherein the determining the structure layout matched with the target capacitance parameter combination to obtain the target structure layout of the quantum combination device comprises:

determining an initial structure layout of the quantum composite device;

5. The method of claim 1, wherein the determining target parameter information corresponding to the quantum combining device comprises:

acquiring the target dispersion ratio;

6. The method of claim 5, wherein the first variable comprises a first layout quantity and a second layout quantity, and wherein determining the first feature parameter based on the target dispersion ratio and a predetermined first relationship comprises:

determining the value of the first layout parameter as the first target value;

7. The method of claim 6, wherein the first version parameter is

The second layout parameter is

Wherein E is _qq For the coupling energy between two qubits, E _qc As qubits and couplersCoupling energy of E _Cq For characterizing the dissonance of qubits, E _Cc For characterizing the dissonance of the coupler.

8. The method according to claim 6, wherein the number of the first target values is two, the first target value corresponding to the layout structure with the target coupling strength smaller than zero is different from the first target value corresponding to the layout structure with the target coupling strength larger than zero, and the determining the value of the first layout parameter as the first target value includes:

9. The method of claim 1, wherein the target parameter information further comprises a second characteristic parameter, the second characteristic parameter comprising a first target eigenfrequency and a second target eigenfrequency, the first target eigenfrequency being an eigenfrequency of the qubit and the coupler when the quantum combiner reaches a target coupling strength, the second target eigenfrequency being an eigenfrequency of the qubit and the coupler when the quantum combiner couples off-points;

the output target information includes:

10. The method of claim 9, wherein the determining target parameter information corresponding to the quantum combining device further comprises:

acquiring the target eigenfrequency;

and determining the first target eigenfrequency and the second target eigenfrequency based on the target eigenfrequency, the predetermined relation between the eigenfrequency of the qubit and the target eigenfrequency, and the relation between the eigenfrequency of the coupler and the target eigenfrequency.

11. The method of claim 10, wherein,

in a case where the target eigenfrequency is determined to be the first target eigenfrequency, an eigenfrequency determined based on a relationship between an eigenfrequency of a coupler and the target eigenfrequency is the second target eigenfrequency;

12. A design information output device including a coupler superconducting qubit structure, comprising:

the device comprises a first determining module, a second determining module and a third determining module, wherein the first determining module is used for determining target parameter information corresponding to a quantum combination device, the quantum combination device comprises two quantum bits and a coupler used for coupling the two quantum bits, the target parameter information comprises a first characteristic parameter, and the first characteristic parameter is a parameter related to a capacitance parameter combination corresponding to a structural layout of the quantum combination device;

13. The apparatus of claim 12, wherein the second determining means comprises:

the construction submodule is used for constructing a second constraint condition of a target quantity based on the capacitance quantity corresponding to a preset layout structure, the second constraint condition is used for constraining capacitance parameters corresponding to a quantum combination device structure layout, and the target quantity is larger than or equal to a value obtained by subtracting the parameter quantity in the first characteristic parameter from the capacitance quantity;

14. The apparatus of claim 13, wherein the second constraint is any one of:

15. The apparatus of claim 12, wherein the third determining means comprises:

16. The apparatus of claim 12, wherein the first determining means comprises:

17. The apparatus according to claim 16, wherein the first variable includes a first layout parameter and a second layout parameter, and the third determination submodule includes:

18. The apparatus of claim 17, wherein the first version parameter is

The second layout parameter is

Wherein, E _qq For the coupling energy between two qubits, E _qc Coupling energy of qubits and couplers, E _Cq For characterizing the dissonance of qubits, E _Cc For characterizing the dissonance of the coupler.

19. The apparatus according to claim 17, wherein the number of the first target values is two, and the first target values corresponding to layout structures with the target coupling strength less than zero are different from the first target values corresponding to layout structures with the target coupling strength greater than zero;

20. The apparatus of claim 12, wherein the target parameter information further comprises a second characteristic parameter comprising a first target eigenfrequency and a second target eigenfrequency, the first target eigenfrequency being an eigenfrequency of the qubit and the coupler when the quantum combining device reaches a target coupling strength, the second target eigenfrequency being an eigenfrequency of the qubit and the coupler when the quantum combining device is coupling off;

the output module is specifically configured to output the target structure layout, the first target eigenfrequency, and the second target eigenfrequency.

21. The apparatus of claim 20, wherein the first determining means further comprises:

22. The apparatus as defined in claim 21, wherein, in a case where the target eigenfrequency is determined to be the first target eigenfrequency, an eigenfrequency determined based on a relationship of an eigenfrequency of a coupler to the target eigenfrequency is the second target eigenfrequency;

23. An electronic device, comprising:

at least one processor; and

the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-11.

24. A non-transitory computer readable storage medium having stored thereon computer instructions for causing the computer to perform the method of any one of claims 1-11.

25. A computer program product comprising a computer program which, when executed by a processor, implements the method according to any one of claims 1-11.