CN115497788A - Ion implantation device and ion implantation angle adjusting and controlling method - Google Patents
Ion implantation device and ion implantation angle adjusting and controlling method Download PDFInfo
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- CN115497788A CN115497788A CN202110678029.5A CN202110678029A CN115497788A CN 115497788 A CN115497788 A CN 115497788A CN 202110678029 A CN202110678029 A CN 202110678029A CN 115497788 A CN115497788 A CN 115497788A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/023—Means for mechanically adjusting components not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Abstract
The invention provides an ion implantation device and an ion implantation angle regulation and control method, wherein the ion implantation device comprises an ion beam source, a target disc, a wheel disc, a numerical control hydraulic rod and a data processing module, wherein the ion beam source is used for generating ion beams; the target disc is used for bearing a wafer, and a laser emitter used for emitting laser signals is arranged on the target disc; the wheel disc is provided with a bracket for supporting the target disc and a laser signal receiver for receiving a laser signal emitted by the laser emitter; the numerical control hydraulic rod is arranged at an interval with the bracket and used for regulating and controlling the angle between the target disc and the wheel disc; and the data processing module is used for receiving the feedback signal of the laser signal receiver and sending an instruction for regulating and controlling the numerical control hydraulic rod. The invention realizes the real-time monitoring and dynamic regulation of the ion implantation angle and effectively avoids the cone angle effect.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and relates to an ion implantation device and an ion implantation angle adjusting and controlling method.
Background
With the rapid development of integrated circuit manufacturing technology, the feature size is continuously shrinking, and the requirement for the integrated circuit manufacturing process is also higher and higher. The ion implantation technology is an important technology in the modern integrated circuit manufacturing technology, and the ion implantation technology replaces the traditional diffusion furnace tube technology greatly due to the perfect performance of the ion implantation technology on the distribution of the doping dose, the doping angle and the doping appearance. The ion implantation process mainly comprises the steps of injecting gas of a doping substance into an ion source by using an ion implanter for ionization, and injecting the gas into a wafer through electric field acceleration so as to realize the doping of a semiconductor.
In a semiconductor doping process, a batch type ion implanter is a widely used machine type, and has the advantages of reliable process, high implantation efficiency and the like. In the ion implantation process, the direction of an ion beam is fixed and unchanged, and the wheel disc rotates around a shaft at a high speed and moves left and right (or up and down) in a reciprocating manner, so that the whole implantation process is completed; the wheel disc needs to rotate around the shaft at a high speed during working, so that a centrifugal force is generated, in order to inhibit the damage of centrifugal force aggregation to the wafer, the target disc is tilted upwards by a fixed and unchangeable angle in the batch type ion implanter, the centrifugal force is decomposed and weakened by the design, and meanwhile, the channeling effect is avoided, so that the doped ions can be uniformly distributed on the whole wafer. However, due to the structural design, when the ion beam implantation angle is not equal to the tilting angle of the target disk, an included angle is formed between the implantation direction and the axis direction of the wheel disk, the center of the same wafer is gradually and symmetrically increased towards the ion implantation angles at the two sides due to the included angle, a taper angle effect is generated, so that the depth distribution of impurity ions implanted into the whole wafer is changed, and the yield of products is seriously influenced.
Currently, to suppress the taper angle effect, a single step implantation, a small angle rotation, and multiple step implantation and single wafer tool methods are generally used. The single step implantation method adopts an ion implantation angle which is set to be equal to or close to the cone angle, so that the depth of impurity ions implanted into the wafer is similar, and the cone angle effect is restrained, but the method is only effective for a specific process scheme. Although the multi-step implantation method and the single wafer tool method harmonize the uniformity of the depth of the impurity ions implanted into the wafer, the process steps are more complicated. Therefore, there is a need for an ion implantation method that can effectively suppress the cone angle effect with a wide application range and without increasing the number of process steps.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an ion implantation apparatus and an ion implantation angle adjusting method, which are used to solve the problems of narrow applicability and complicated steps of the prior art method for suppressing the cone angle effect.
To achieve the above and other related objects, the present invention provides an ion implantation apparatus, comprising:
an ion beam source for generating an ion beam;
the target disc is used for bearing a wafer, and a laser emitter used for emitting laser signals is arranged on the target disc;
the wheel disc is provided with a bracket for supporting the target disc and a laser signal receiver for receiving the laser signal;
the numerical control hydraulic rod is arranged at an interval with the bracket, and two ends of the numerical control hydraulic rod are respectively connected with the target disc and the wheel disc so as to adjust an included angle between the target disc and the wheel disc;
and the data processing module is used for receiving a feedback signal of the laser signal receiver, calculating an included angle between the target disc and the ion beam and sending an instruction for regulating and controlling the numerical control hydraulic rod.
Optionally, the ion beam is parallel to an axis of the wheel.
Optionally, a negative pressure adsorption device is arranged on the target disc.
Optionally, the surface of the target disc is provided with an elastic component to form elastic fit contact with the wafer.
Optionally, the ion implantation apparatus includes a plurality of the target disks and a plurality of the numerical control hydraulic rods, and different ones of the target disks are respectively connected to different ones of the numerical control hydraulic rods.
Optionally, the numerical control hydraulic rod changes the inclination angle of the target disc in a telescopic manner to adjust the included angle between the target disc and the wheel disc.
Optionally, the laser emitter is mounted on an edge of the target disk, and a laser beam emitted by the laser emitter is parallel to a lower surface of the target disk.
Optionally, a laser receiving surface of the laser signal receiver is perpendicular to the wheel disc, the laser signal receiver is spaced from the support by a first preset distance, and the laser signal receiver is spaced from the numerical control hydraulic rod by a second preset distance.
Optionally, the data processing module is connected to the laser signal receiver and the digital control hydraulic rod through a circuit.
The invention also provides an ion implantation angle adjusting and controlling method, which is characterized by comprising the following steps:
fixing the wafer on a target disc, and controlling the incident direction of the ion beam to be unchanged;
starting the wheel disc and enabling the laser emitter to emit laser signals;
the laser signal receiver receives the laser signal sent by the laser transmitter and feeds back the laser signal information to the data processing module;
and the data processing module calculates the included angle between the target disc and the ion beam according to feedback information and sends an instruction for regulating and controlling the numerical control hydraulic rod so as to regulate the included angle between the target disc and the wheel disc.
Optionally, the laser transmitter, the laser signal receiver, the numerical control hydraulic rod, and the data processing module cooperate with each other at a predetermined frequency during ion implantation to monitor an included angle between the target disk and the ion beam in real time, and dynamically adjust and control an ion implantation angle.
Optionally, the ion beam is always parallel to the axis of the carousel during ion implantation.
Optionally, the step of adjusting the included angle between the target disc and the wheel disc by the data processing module according to the feedback information includes:
the data processing module receives feedback information of the laser signal receiver and converts the feedback information into position information of a laser signal receiving point;
calculating an included angle between the wheel disc and the target disc according to the position information of the laser signal receiving point and the position information of the bracket;
comparing the preset incident angle with the calculated included angle;
and sending an instruction to the numerical control hydraulic rod to control the extension and retraction of the numerical control hydraulic rod through a comparison result, controlling the angle between the target disc and the wheel disc through controlling the extension and retraction of the hydraulic rod, and further controlling the angle between the target disc and the ion beam to ensure that the calculated included angle is the same as a preset incident angle, thereby ensuring that the implantation angle of ions is not changed.
Optionally, the angle between the target disk and the ion beam is changed by controlling the extension and retraction of the numerical control hydraulic rod, and different ion implantation angles are realized.
Optionally, the roulette plate is connected to a plurality of the target discs, and the angle of each of the target discs is adjusted.
Optionally, in the ion implantation process, the ion implantation angles of all the wafers are the same, or the ion implantation angles of at least two wafers are different.
Optionally, in the ion implantation process, the ion implantation doses of all the wafers are the same, or the ion implantation doses of at least two wafers are different.
Optionally, when the ion implantation angle is smaller than a preset angle, a negative pressure adsorption device in the target disk is started to generate negative pressure between the target disk and the wafer.
As described above, according to the ion implantation apparatus and the ion implantation angle control method of the present invention, the implantation direction of the ion beam is fixed to be unchanged, so that the ion beam is parallel to the axis of the wheel disc, the numerical control hydraulic rod is installed between the wheel disc and each target disc, the implantation angle of the ion beam is controlled by using the expansion and contraction of the numerical control hydraulic rod, the laser transmitter is installed at the edge of the target disc, the laser signal receiver is installed at the position corresponding to the laser transmitter at the edge of the wheel disc, then the laser signal receiver and the numerical control hydraulic rod are connected with the data processing module, and the ion implantation angle is accurately measured by the cooperation of the laser transmitter, the laser signal receiver and the data processing module; the numerical control hydraulic rod and the data processing module are matched to work, and the change of the ion implantation angle is accurately controlled, so that the cone angle effect is effectively avoided. In addition, the device can also carry out the ion implantation with the same dose or different doses on different wafers in the same batch of ion implantation, and carry out the ion implantation with the same ion implantation angle or different ion implantation angles on different wafers, thereby having high industrial utilization value.
Drawings
Fig. 1 is a schematic structural diagram of an ion implantation apparatus according to the present invention.
Fig. 2 is a schematic cross-sectional view of a target disk and a wheel disk of the ion implantation apparatus according to the present invention.
Fig. 3 is a schematic diagram showing the relative positions of the target disk and the roulette plate when the ion implantation angle of the ion implantation apparatus of the present invention is zero.
Fig. 4 is a flowchart illustrating an ion implantation angle adjusting method according to the present invention.
Description of the element reference numerals
1. Ion beam
2. Target plate
21. Laser transmitter
3. Wheel disc
31. Support frame
32. Numerical control hydraulic rod
33. Laser signal receiver
4. Data processing module
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
Referring to fig. 1, a schematic structural diagram of an ion implantation apparatus is shown, which includes an ion beam source (not shown), a target disk 2, a wheel disk 3, a numerical control hydraulic rod 32, and a data processing module 4. Fig. 2 is a schematic cross-sectional view of the target disk 2 and the wheel disk 3.
Specifically, the ion beam source is used for generating an ion beam 1; the target disc 2 is used for bearing a wafer, and a laser emitter 21 for emitting a laser signal is arranged on the target disc 2; the wheel disc 3 is provided with a bracket 31 for supporting the target disc and a laser signal receiver 33 for receiving laser signals; the numerical control hydraulic rod 32 and the bracket 31 are arranged at intervals, and two ends of the numerical control hydraulic rod 32 are respectively connected with the target disc 2 and the wheel disc 3 so as to adjust an included angle between the target disc 2 and the wheel disc 3; the data processing module 4 is configured to receive a feedback signal of the laser signal receiver 33, calculate an included angle between the target disk 2 and the ion beam 1, and send an instruction for adjusting and controlling the numerical control hydraulic rod 32.
As an example, the ion beam 1 is parallel to the axis of the disk 3. In this embodiment, the direction of fixing the ion beam 1 is parallel to the axis of the disk 3. In this case, the plane angle of the target disk 2 and the roulette 3 is equal to the angle between the ion beam axis and the wafer normal, i.e., equal to the ion implantation angle.
As an example, a negative pressure adsorption device is arranged on the target disc 2. In this embodiment, set up negative pressure adsorption equipment on the target disc 2 and can avoid centrifugal force to gather when the small-angle ion implantation to cause the destruction to the wafer. For example, when the ion implantation angle is less than 1 ° or other predetermined angle, the negative pressure adsorption device may be turned on to generate a negative pressure between the target disk and the wafer.
As an example, the surface of the target disc 2 is provided with an elastic component to form an elastic fitting contact with the wafer, and the elastic fitting contact can increase the force-bearing area outside the wafer and weaken a small range of local force-bearing.
Specifically, please refer to fig. 3, which shows a schematic diagram of the target disk and the wheel disk when the ion implantation angle is zero. In this embodiment, when the ion implantation angle is close to 0 °, for example, when the ion implantation angle is smaller than 1 °, the negative pressure adsorption device is activated to prevent the wafer from being damaged by centrifugal force accumulation during ion implantation, and when the ion implantation angle is larger than 1 °, the negative pressure adsorption device may be set to be turned off.
As an example, the ion implantation apparatus includes a plurality of the target disks 2 and a plurality of the numerical control hydraulic rods 32, and different ones of the numerical control hydraulic rods 32 are connected to different ones of the target disks 2. In this embodiment, each of the numerically controlled hydraulic rods 32 is electrically connected to the data control module 4, and the data control module 4 can control each of the numerically controlled hydraulic rods 32.
As an example, the numerical control hydraulic rod 32 changes the inclination angle of the target disk 2 in a telescopic manner to adjust the included angle between the target disk 2 and the wheel disk 3. In this embodiment, the numerical control hydraulic rod 32 is a small device, and can be extended and retracted in a very small range within a working stroke, so that the target plate 2 can be changed in a very small angle, and the position of the target plate 2 can be locked.
As an example, the laser emitter 21 is installed at the edge of the target disk 2, and the laser emitter 21 emits a laser beam parallel to the lower surface of the target disk 2.
As an example, a laser receiving surface of the laser signal receiver 33 is perpendicular to the wheel disc 3, the laser signal receiver 33 is spaced from the bracket 31 by a first preset distance, and the laser signal receiver 33 is spaced from the numerically controlled hydraulic rod 32 by a second preset distance. In this embodiment, the first preset distance may be the same as or different from the second preset distance.
As an example, the data processing module 4 is electrically connected to the laser signal receiver 33 and the digital control hydraulic rod 32.
The ion implantation device of the embodiment is characterized in that the numerical control hydraulic rod 32 which can be finely adjusted is additionally arranged between the target disc 2 and the wheel disc 3, the laser emitter 21 is arranged at the edge of the target disc 2, the laser signal receiver 33 is arranged on the wheel disc corresponding to the laser emitter 21, and a data processing module for controlling the numerical control hydraulic rod 32 and receiving feedback information of the laser signal receiver 33 is arranged, so that the real-time monitoring and dynamic regulation and control of an ion implantation angle in an ion implantation process are realized.
Example two
In the present embodiment, an ion implantation angle adjusting and controlling method is provided, please refer to fig. 4, which is a flowchart of the method, including the following steps:
s1: fixing the wafer on a target disc, and controlling the incident direction of the ion beam to be unchanged;
s2: starting the wheel disc and enabling the laser emitter to emit laser signals;
s3: the laser signal receiver receives a laser signal sent by the laser transmitter and feeds back the information of the laser signal to the data processing module;
s4: and the data processing module calculates an included angle between the target disc and the ion beam according to feedback information, and sends a command of regulating and controlling the numerical control hydraulic rod to regulate the included angle between the target disc and the wheel disc.
As an example, the laser transmitter 21, the laser signal receiver 33, the numerical control hydraulic rod 32 and the data processing module 4 cooperate with each other at a predetermined frequency during ion implantation to monitor an included angle between the target disk 2 and the ion beam 1 in real time, and dynamically adjust and control an ion implantation angle.
As an example, the ion beam 1 is always parallel to the axis of the disk 3 during ion implantation. In this embodiment, since the implantation direction of the ion beam 1 is always parallel to the axis of the wheel disc 3 during the ion implantation process, the extension and retraction of the numerical control hydraulic rod 32 drives the target disc 2 to rotate around the connecting point of the bracket 31 and the target disc 2, so as to change the angle between the target disc 2 and the wheel disc 3, and also change the angle between the target disc 2 and the ion beam 1, thereby adjusting and controlling the ion implantation angle and ensuring that the ion implantation angle is not changed.
As an example, the step of adjusting the angle between the target disk 2 and the roulette plate 3 by the data processing module 4 according to the feedback information includes:
s4-1: the data processing module receives feedback information of the laser signal receiver and converts the feedback information into position information of a laser signal receiving point;
s4-2: calculating an included angle between the wheel disc and the target disc according to the position information of the laser signal receiving point and the position information of the bracket;
s4-3: comparing the preset incident angle with the calculated included angle;
s4-4: and sending an instruction to the numerical control hydraulic rod to control the stretching of the numerical control hydraulic rod through a comparison result, controlling the angle between the target disc and the wheel disc by controlling the stretching of the hydraulic rod, further controlling the angle between the target disc and the ion beam, enabling the calculated included angle to be the same as a preset incident angle, and further ensuring that the ion implantation angle is unchanged.
As an example, the angle between the target disk 2 and the ion beam 1 is changed by controlling the extension and contraction of the numerical control hydraulic rod 32, and different ion implantation angles are realized.
As an example, the roulette 3 is connected to a plurality of the target disks 2, and the angle of each of the target disks 2 is adjusted.
As an example, during the ion implantation process, the ion implantation angles of all the wafers are the same, or the ion implantation angles of at least two wafers are different. In this embodiment, the ion implantation angle of each wafer on each target disk 2 needs to be preset in the menu, and the activation of the negative pressure adsorption device on each target disk 2 can be preset through the menu.
As an example, during the ion implantation process, the ion implantation doses of all the wafers are the same, or the ion implantation doses of at least two wafers are different.
As an example, when the ion implantation angle is smaller than a predetermined angle, the negative pressure adsorption device in the target disk 2 is turned on to generate a negative pressure between the target disk 2 and the wafer. In this embodiment, a preset angle for opening the negative pressure adsorption device may be preset in the menu before ion implantation.
According to the ion implantation angle adjusting and controlling method of the embodiment, through the cooperative work of the laser emitter 21, the laser signal receiver 33, the numerical control hydraulic rod 32 and the data processing module 4, the laser emitter 21 emits a laser signal, the laser signal receiver 33 receives the laser signal emitted by the laser emitter 21 and feeds the signal back to the data processing module 4, and the data processing module 4 sends a control instruction to adjust and control the numerical control hydraulic rod 32 according to the feedback information of the laser signal receiver 33, so that the real-time adjustment and control of the ion implantation angle are realized, the ion implantation angle is guaranteed to be unchanged in the ion implantation process, and the cone angle effect is avoided.
In summary, the ion implantation device and the ion implantation angle adjusting and controlling method of the present invention fix the implantation direction of the ion beam to make it parallel to the axis of the wheel disc, and add a numerical control hydraulic rod capable of fine tuning between the target disc and the wheel disc, the edge of the target disc is installed with a laser emitter, the wheel disc corresponding to the laser emitter is installed with a laser signal receiver, and a data processing module is provided for controlling the numerical control hydraulic rod and receiving the feedback information of the laser signal receiver; the laser emitter emits laser signals, the laser signal receiver receives the laser signals and feeds the signals back to the data processing module, and finally the data processing module sends control instructions to regulate and control the stretching of the numerical control hydraulic rod according to the feedback information of the laser signal receiver, so that the simple measurement of the ion implantation angle and the real-time monitoring and dynamic regulation and control of the ion implantation angle are realized, the ion implantation angle is ensured to be unchanged in the ion implantation process, and the cone angle effect is effectively avoided. In addition, the invention can also realize the ion implantation with the same dose or different doses for different wafers in the same batch of ion implantation, and the ion implantation with the same ion implantation angle or different ion implantation angles for different wafers. Therefore, the present invention effectively overcomes various disadvantages of the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (18)
1. An ion implantation apparatus, comprising:
an ion beam source for generating an ion beam;
the target disc is used for bearing the wafer, and a laser emitter for emitting laser signals is arranged on the target disc;
the wheel disc is provided with a bracket for supporting the target disc and a laser signal receiver for receiving the laser signal;
the numerical control hydraulic rod is arranged at an interval with the bracket, and two ends of the numerical control hydraulic rod are respectively connected with the target disc and the wheel disc so as to adjust an included angle between the target disc and the wheel disc;
and the data processing module is used for receiving a feedback signal of the laser signal receiver, calculating an included angle between the target disc and the ion beam and sending an instruction for regulating and controlling the numerical control hydraulic rod.
2. The ion implantation system of claim 1, wherein: the ion beam is parallel to an axis of the wheel.
3. The ion implantation system of claim 1, wherein: and a negative pressure adsorption device is arranged on the target disc.
4. The ionic device of claim 1, wherein: the surface of the target disc is provided with an elastic part to form elastic fit type contact with the wafer.
5. The ion implantation system of claim 1, wherein: the ion implantation device comprises a plurality of target discs and a plurality of numerical control hydraulic rods, and different target discs are respectively connected with different numerical control hydraulic rods.
6. The ion implantation system of claim 1, wherein: the numerical control hydraulic rod changes the inclination angle of the target disc in a telescopic mode so as to adjust the included angle between the target disc and the wheel disc.
7. The ion implantation system of claim 1, wherein: the laser emitter is arranged on the edge of the target disc, and a laser beam emitted by the laser emitter is parallel to the lower surface of the target disc.
8. The ion implantation system of claim 1, wherein: the laser receiving surface of the laser signal receiver is perpendicular to the wheel disc, the laser signal receiver is spaced from the support by a first preset distance, and the laser signal receiver is spaced from the numerical control hydraulic rod by a second preset distance.
9. The ion implantation system of claim 1, wherein: the data processing module is connected with the laser signal receiver and the numerical control hydraulic rod through a circuit.
10. An ion implantation angle adjusting and controlling method is characterized by comprising the following steps:
fixing the wafer on a target disc, and controlling the incident direction of the ion beam to be unchanged;
starting the wheel disc and enabling the laser transmitter to send out a laser signal;
the laser signal receiver receives the laser signal sent by the laser transmitter and feeds back the laser signal information to the data processing module;
and the data processing module calculates an included angle between the target disc and the ion beam according to feedback information, and sends a command of regulating and controlling the numerical control hydraulic rod to regulate the included angle between the target disc and the wheel disc.
11. The method of claim 10, wherein: the laser transmitter, the laser signal receiver, the numerical control hydraulic rod and the data processing module cooperatively work at a preset frequency in the process of ion implantation to monitor the included angle between the target disc and the ion beam in real time and dynamically regulate and control the ion implantation angle.
12. The method of claim 10, wherein: the ion beam is always parallel to the axis of the wheel during ion implantation.
13. The method of claim 10, wherein the step of adjusting the angle between the target disk and the wheel disk by the data processing module according to the feedback information comprises:
the data processing module receives feedback information of the laser signal receiver and converts the feedback information into position information of a laser signal receiving point;
calculating an included angle between the wheel disc and the target disc according to the position information of the laser signal receiving point and the position information of the bracket;
comparing the preset incident angle with the calculated included angle;
and sending an instruction to the numerical control hydraulic rod to control the stretching of the numerical control hydraulic rod through a comparison result, controlling the angle between the target disc and the wheel disc by controlling the stretching of the hydraulic rod, and further controlling the angle between the target disc and the ion beam to ensure that the calculated included angle is the same as a preset incident angle, thereby ensuring that the implantation angle of ions is not changed.
14. The method of claim 10, wherein: the angle between the target disc and the ion beam is changed by controlling the extension and retraction of the numerical control hydraulic rod, and different ion implantation angles are realized.
15. The method of claim 10, wherein: the rotary table is connected with a plurality of target discs, and the angles of the target discs are adjusted respectively.
16. The method of claim 15, wherein: in the ion implantation process, the ion implantation angles of all the wafers are the same, or the ion implantation angles of at least two wafers are different.
17. The method of claim 15, wherein: in the ion implantation process, the ion implantation doses of all the wafers are the same, or the ion implantation doses of at least two wafers are different.
18. The method of claim 10, wherein: and when the ion implantation angle is smaller than a preset angle, starting a negative pressure adsorption device in the target disc to generate negative pressure between the target disc and the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110678029.5A CN115497788A (en) | 2021-06-18 | 2021-06-18 | Ion implantation device and ion implantation angle adjusting and controlling method |
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| CN202110678029.5A CN115497788A (en) | 2021-06-18 | 2021-06-18 | Ion implantation device and ion implantation angle adjusting and controlling method |
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| CN115497788A true CN115497788A (en) | 2022-12-20 |
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| CN202110678029.5A Pending CN115497788A (en) | 2021-06-18 | 2021-06-18 | Ion implantation device and ion implantation angle adjusting and controlling method |
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