CN115473120A - Surface emitting laser device, package structure, and light emitting device - Google Patents
Surface emitting laser device, package structure, and light emitting device Download PDFInfo
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- CN115473120A CN115473120A CN202211359547.1A CN202211359547A CN115473120A CN 115473120 A CN115473120 A CN 115473120A CN 202211359547 A CN202211359547 A CN 202211359547A CN 115473120 A CN115473120 A CN 115473120A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
The application discloses a surface-emitting laser device, a packaging structure and a light-emitting device, wherein the surface-emitting laser device comprises a substrate; a plurality of light emitting arrays formed on the first surface, each light emitting array including at least one light emitting element; the first electrode is formed on the first surface and is electrically connected with all the light-emitting elements of the plurality of light-emitting arrays; the plurality of second electrodes correspond to the plurality of light emitting arrays one by one, and each second electrode is electrically connected with all the light emitting elements of the corresponding light emitting array. According to the method, the thin and long strip-shaped metal is prevented from being arranged on the chip, and the uniformity of current injection is ensured; the space for bonding gold wires is not required to be reserved among the light-emitting elements, so that the integration of the light-emitting device is effectively improved; the interconnection of gold bonding wires is avoided, so that the parasitic resistance and parasitic inductance of the system are effectively avoided, and the quick response speed of the VCSEL is ensured; the active region does not need to pass through a semiconductor substrate with larger thermal resistance for heat dissipation, and the heat dissipation efficiency is improved.
Description
Technical Field
The application belongs to the technical field of semiconductor devices, and particularly relates to a surface-emitting laser device, a packaging structure and a light-emitting device.
Background
In the prior art, attempts have been made to change a VCSEL from a single-lit array to a row-by-row and column-by-column one-dimensional device by using a partitioning technique or the like, so as to effectively control a light emitting area to save system power consumption, and improve heat dissipation performance and light emitting efficiency.
However, when the sub-regions in the prior art are in the shape of stripes, current injection needs to be achieved through the long-striped wires, the current is diffused in parallel from one end to the other end through the long-striped wires, and the resistance of the wires causes non-uniformity of current injection, which causes different optical powers emitted from the emission holes of different VCSELs, thereby affecting the use and integration of the system.
Meanwhile, in the prior art, due to the limitation of space, partitioning is greatly limited, in order to improve the flexibility of partitioning, the position of a gold wire needs to be reserved on a chip space, signals can be controlled independently, the implementation of multiple addresses is difficult, and the parasitic resistance and parasitic inductance of a system are brought by the gold wire and the long metal in an addressing interval, so that the response speed of the VCSEL is influenced.
Disclosure of Invention
An object of the application is to provide a surface emitting laser device, packaging structure and luminescent device to current injection inhomogeneities that solve among the prior art VCSEL luminescent device subregion control and exist lead to the luminous power difference that each transmitting hole of different VCSELs launches, gold thread occupation space has influenced integrated miniaturization, has lead to the limitation of subregion, and gold thread and rectangular metal have influenced response speed's problem.
In order to achieve the above purpose, the present application adopts a technical solution that:
there is provided a surface-emitting laser device including:
the substrate comprises a first surface and a second surface which are arranged oppositely;
a plurality of light emitting arrays formed on the first surface, each of the light emitting arrays including at least one light emitting element capable of emitting light in a direction in which the first surface points to the second surface;
a first electrode formed on the first surface, the first electrode being electrically connected to all of the light emitting elements of the plurality of light emitting arrays;
the second electrodes are in one-to-one correspondence with the light emitting arrays, each second electrode is formed on one side face, away from the substrate, of the corresponding light emitting array, and the second electrodes are electrically connected with all the light emitting elements of the corresponding light emitting array.
In one or more embodiments, the light emitting element includes:
a first conductive reflective layer disposed on the substrate;
an active layer disposed on the first conductive reflective layer;
the first electrode is electrically connected with the first conductive reflecting layer.
In one or more embodiments, the first conductive reflective layer of the light emitting element disposed on the substrate is integrally connected, and the first electrode is disposed on and electrically connected to the first conductive reflective layer.
In one or more embodiments, the display device further includes a first ohmic contact layer disposed on a side of the first conductive reflective layer facing away from the substrate, the first ohmic contact layer is electrically connected to the first conductive reflective layer, the first electrode is disposed on a side of the first ohmic contact layer facing away from the first conductive reflective layer, and the first electrode is electrically connected to the first ohmic contact layer.
In one or more embodiments, the substrate is a conductive substrate, the first electrode is electrically connected to the substrate, and the first conductive reflective layer is electrically connected to the substrate.
In one or more embodiments, the semiconductor device further includes a first ohmic contact layer disposed on a side of the substrate and electrically connected to the substrate, and the first electrode is disposed on a side of the first ohmic contact layer opposite to the substrate and electrically connected to the first ohmic contact layer.
In one or more embodiments, the light emitting element further includes a second conductive reflective layer formed on a side of the active layer away from the first conductive reflective layer, and the second electrode is electrically connected to the second conductive reflective layer of all the light emitting elements of the corresponding light emitting array.
In one or more embodiments, the light emitting device further includes a second ohmic contact layer formed on a side of the second conductive reflective layer facing away from the active layer, the second ohmic contact layer is electrically connected to the second conductive reflective layer, and the second electrode is electrically connected to the second ohmic contact layer.
In one or more embodiments, the light emitting device further includes an insulating layer disposed on the first surface, and the insulating layer covers a gap adjacent to the light emitting element and a side surface of the light emitting element.
In one or more embodiments, the second electrode covers the insulating layer on the side of the light emitting element of the corresponding light emitting array, and the insulating layer covers the first ohmic contact layer to form a mesa structure.
In one or more embodiments, the first surface of the substrate is uniformly arrayed with a plurality of rows and columns of the light-emitting elements, and each of the light-emitting arrays includes one, one row, one column, a plurality of adjacent rows or a plurality of adjacent columns of the light-emitting elements.
In one or more embodiments, each of the light emitting arrays includes at least two of the light emitting elements, and the plurality of light emitting arrays may be configured to operate individually to achieve zone control.
In one or more embodiments, the side of the first electrode facing away from the substrate and the side of the second electrode facing away from the substrate are located on the same plane parallel to the first surface.
In one or more embodiments, the second electrode is a metal sheet, and an orthographic projection of the second electrode on the first surface covers an orthographic projection of the corresponding light emitting array on the first surface.
In order to achieve the above purpose, the present application adopts another technical solution:
there is provided a surface emitting laser package structure including:
the surface-emitting laser device according to any one of the above embodiments;
a base plate disposed on the first surface side of the substrate, the base plate including:
a first bonding electrode bonded to the first electrode;
the plurality of second bonding electrodes correspond to the plurality of second electrodes one by one, and each second bonding electrode is bonded with the corresponding second electrode;
and a connection line disposed between the first bonding electrode and the plurality of second bonding electrodes.
In order to achieve the above object, the present application adopts another technical solution:
there is provided a light emitting device including the surface emitting laser device according to any one of the above embodiments.
Different from the prior art, the beneficial effects of this application are:
according to the surface emitting laser device, the light emitting elements are lighted in a partition mode through the first electrode and the second electrode, thin and long strip-shaped metal is prevented from being arranged on a chip, the uniformity of current injection is effectively guaranteed, and the consistency of the light power of each light emitting element is guaranteed;
the surface emitting laser device does not need to reserve spaces for bonding gold wires among the light emitting elements, and effectively improves the integration of the light emitting devices; due to the interconnection of no gold wire, the parasitic resistance and parasitic inductance of the system are effectively avoided, and the quick response speed of the VCSEL is ensured;
the array mode of the light-emitting element and the partition mode of the light-emitting array are not limited, so that the partition flexibility is effectively improved, and the limitation of the traditional partition technology is avoided;
the surface emitting laser device can dissipate heat through the first electrode and the second electrode in work, and compared with the traditional partitioned laser device which needs to dissipate heat through a semiconductor substrate with high heat resistance, the heat dissipation performance of the device is effectively improved;
the surface emitting laser packaging structure realizes partition control by wiring on the substrate, so that the number of partition areas can be increased without increasing the wiring area of a chip;
the light-emitting device can realize the partition lighting of the light-emitting elements in any region by designing the array mode of the light-emitting elements and the partition mode of the light-emitting array, thereby effectively controlling the light emitting region to save the system power consumption and improve the heat dissipation performance and the light-emitting efficiency.
Drawings
FIG. 1 is a schematic structural view of an embodiment of a surface-emitting laser device of the present application;
FIG. 2 is a schematic cross-sectional structural view of an embodiment of a surface-emitting laser device of the present application;
FIG. 3 is a schematic cross-sectional structural view of another embodiment of a surface-emitting laser device of the present application;
FIG. 4 is a schematic cross-sectional view of yet another embodiment of a surface-emitting laser device of the present application;
FIG. 5 is a schematic structural view of yet another embodiment of a surface-emitting laser device of the present application;
fig. 6 is a schematic structural diagram of an embodiment of a surface-emitting laser package structure according to the present application.
Detailed Description
The present application will be described in detail below with reference to various embodiments shown in the accompanying drawings. The embodiments are not limited to the embodiments, and structural, methodological, or functional changes made by those skilled in the art according to the embodiments are included in the scope of the present disclosure.
In the prior art, attempts have been made to implement Vertical Cavity Surface Emitting Lasers (VCSELs) from a single lit array to row-by-row, column-by-column, one-dimensional devices by using zoning techniques and the like. Therefore, the advantage of addressable property can be utilized to realize the independent capture and analysis of each area information, and the system power consumption can be saved by effectively controlling the light emitting area; the heat dissipation performance is better, and the luminous efficiency is better; unnecessary object glare is reduced. In addition, through proper system design, the system-level anti-interference capability can be realized, and the spatial resolution is improved.
However, when the existing partitioning technology is applied to a linear region, the conductive current injection needs to be realized through the metal of the long line, the current is diffused from one end to the other end in parallel through the metal of the long line, and the resistance of the metal causes the nonuniformity of the current injection, so that the light power emitted from each emission hole of different VCSELs is different, and the use and integration of the system are influenced. In addition, because the metal and the light-emitting surface are on the same side, the metal wire must be provided with a laser emitting route in the middle, so that the resistance of the metal wire is higher, and the nonuniformity of current injection is further aggravated.
Although this effect can be reduced by increasing the thickness of the long line metal, it is difficult to make thick metal at the wafer level, and if the metal is too thick, the metal needs to be farther away from the emitter hole to block the laser, which affects the integration of the system.
In particular, in a large-sized chip, for example, a light emitting chip having a size of 2mm or more, since a long wire metal for current injection has a longer length and a larger resistance, a phenomenon of current non-uniformity is more serious, thereby causing a serious phenomenon of light emission non-uniformity.
In addition, in the prior art, in order to improve the flexibility of the partitions, spaces for routing gold wires need to be reserved between the partitions so as to enable signals to be controlled independently, which causes the limitation of the partitions and is difficult to implement for a multi-address device.
In order to solve the above problems, the applicant developed a surface emitting laser device that can realize zone control without providing gold wires, effectively improving zone flexibility, and avoiding non-uniformity of current injection.
Specifically, referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a surface-emitting laser device according to the present application.
The surface-emitting laser device includes a substrate 10, and the substrate 10 may be any one selected from an intrinsic semiconductor substrate 10, a conductive substrate 10, and an insulating substrate 10. For example, the substrate 10 may be a GaAs intrinsic semiconductor substrate 10. Further, the substrate 10 may be provided by at least one of conductive materials selected from the group consisting of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper tungsten (Cu-W), and carrier wafers such as Si, ge, alN, gaAs, znO, siC, and the like.
The substrate 10 includes a first surface 101 and a second surface 102 opposite to each other, and a plurality of light emitting arrays 20 are formed on the first surface 101 and spaced apart from each other in parallel. Each of the light emitting arrays 20 includes a row of light emitting elements 200 arranged at regular intervals, and the light emitting elements 200 can emit light along a direction that the first surface 101 points to the second surface 102.
The light emitting element 200 may be selected from a light emitting diode element and a laser diode element. For example, the light emitting element 200 according to the embodiment may be a Vertical Cavity Surface Emitting Laser (VCSEL) semiconductor element. A Vertical Cavity Surface Emitting Laser (VCSEL) semiconductor element is capable of emitting a light beam in a direction perpendicular to the surface, thereby achieving light emission in a direction pointing along the first surface 101 towards the second surface 102.
The first surface 101 is further formed with a first electrode 30, and the first electrode 30 is electrically connected to all the light emitting elements 200 of the plurality of light emitting arrays 20, that is, the first electrode 30 is used as a common electrode and is electrically connected to all the light emitting elements 200.
In this embodiment, the first electrode 30 is disposed in the blank area of the substrate 10 beside the light emitting array 20, and in other embodiments, the first electrode 30 may be disposed between the light emitting arrays 20 or disposed on other surfaces, so that the effect of this embodiment can be achieved by ensuring the electrical connection between the first electrode 30 and all the light emitting elements 200.
Referring to fig. 2, fig. 2 is a schematic cross-sectional structure diagram of an embodiment of a surface emitting laser device according to the present application.
The light emitting element 200 includes a first conductive reflective layer 201 disposed on a substrate 10, an active layer 202 disposed on the first conductive reflective layer 201, a second conductive reflective layer 203 disposed on a side of the active layer 202 facing away from the first conductive reflective layer 201, and a current confinement layer 204 of an oxide layer between the active layer 202 and the second conductive reflective layer 203.
The second conductive reflective layer 203 may have a higher reflectivity than the first conductive reflective layer 201. For example, the second conductive reflective layer 203 and the first conductive reflective layer 201 may form a resonant cavity with a reflectivity of 90% or more in a vertical direction. At this time, the generated light may be emitted to the outside through the first conductive reflective layer 201 having a lower reflectivity than the second conductive reflective layer 203, thereby causing the light to be emitted in a direction in which the first surface 101 is directed to the second surface 102.
The first conductive reflective layer 201 of each light emitting device 200 can be electrically connected to the first electrode 30, such that all the light emitting devices 200 are electrically connected to the first electrode 30.
In this embodiment, the first conductive reflective layers 201 of all the light emitting elements 200 may be connected as a single body, and the first electrode 30 may be disposed on the first conductive reflective layers 201, thereby electrically connecting the first electrode 30 to all the light emitting elements 200.
It will be appreciated that, since the first electrode 30 is directly arranged on the first conductive reflective layer 201, the substrate 10 may not need to be a conductive substrate 10, so that the substrate 10 does not need to be doped with a conductive material to improve conductivity, avoid the dopant from affecting the absorption and heat dissipation of emitted light, and ensure the power conversion efficiency PCE.
In this embodiment, a first ohmic contact layer 301 may be further disposed between the first electrode 30 and the first conductive reflective layer 201, the first ohmic contact layer 301 is directly disposed on the first conductive reflective layer 201, and the first electrode 30 is disposed on the first ohmic contact layer 301 and electrically connected to the first conductive reflective layer 201 through the first ohmic contact layer 301, so as to ensure stability of electrical connection.
In an application scenario, as shown in fig. 3, fig. 3 is a schematic cross-sectional structure diagram of another embodiment of the surface emitting laser device of the present application, in order to ensure stability of current transmission, the first ohmic contact layer 301 may cover the entire first conductive reflective layer 201, and an opening is disposed at a position corresponding to the light emitting element 200 to avoid the light emitting element 200, and the first electrode 30 may be directly disposed on the first ohmic contact layer 301, so as to achieve electrical connection between the first electrode 30 and the first conductive reflective layer 201.
In other embodiments, as shown in fig. 4, fig. 4 is a schematic cross-sectional structural view of another embodiment of the surface-emitting laser device of the present application. The first conductive reflective layers 201 of the adjacent light emitting elements 200 may also be isolated from each other, meanwhile, the substrate 10 may be a conductive substrate 10, and the first electrode 30 may be directly disposed on the substrate 10 and electrically connected to the substrate 10, so that the electrical connection between all the light emitting elements 200 and the first electrode 30 is realized, and the beneficial effects of the present embodiment can be realized.
Meanwhile, in this embodiment, the first ohmic contact layer 301 may also be disposed between the first electrode 30 and the substrate 10, the first ohmic contact layer 301 is directly disposed on the substrate 10, and the first electrode 30 is disposed on the first ohmic contact layer 301 and electrically connected to the substrate 10 through the first ohmic contact layer 301, so as to ensure stability of electrical connection.
As shown in fig. 1 and fig. 2, each light emitting array 20 is further provided with a corresponding second electrode 40, the shape of the second electrode 40 matches the strip shape of the light emitting array 20, and the second electrode 40 may be formed on a side of the corresponding light emitting array 20 away from the substrate 10, such that the second electrode 40 is electrically connected to all the light emitting elements 200 of the corresponding light emitting array 20.
Specifically, as shown in fig. 2 to 4, the second electrode 40 may be disposed on a side of the second conductive reflective layer 203 away from the active layer 202, such that the second electrode 40 is electrically connected to the second conductive reflective layer 203, and thus the second electrode 40 is electrically connected to all the light emitting elements 200 of the corresponding light emitting array 20.
In order to ensure the injection of the current, the light emitting element in this embodiment may further include a second ohmic contact layer 205, the second ohmic contact layer 205 may be disposed on a side of the second conductive reflective layer 203 facing away from the active layer 202, and the second electrode 40 is disposed on the second ohmic contact layer 205, thereby ensuring the stability of the electrical connection.
Since the first electrodes 30 are electrically connected to all the light emitting elements 200, and the second electrodes 40 are electrically connected to only the light emitting elements 200 of the corresponding light emitting array 20, the corresponding light emitting array 20 can be lit by selecting the second electrodes 40 forming a loop with the first electrodes 30, so as to achieve the address division lighting.
The first conductive reflective layer 201 in this embodiment mode may be provided as at least one of a group III-V or group II-VI compound semiconductor doped with a dopant of the first conductivity type. For example, the first conductive reflective layer 201 may be one of the group consisting of GaAs, gaAl, inP, inAs, and GaP. The first conductive reflective layer 201 may be provided as a semiconductor material of a compositional formula having AlxGa1-xAs (0 yarn-s x-yarn-s-1)/AlyGa 1-yAs (0 yarn-s y-yarn-s-1) (y < x). The first conductive reflective layer 201 may be an n-type semiconductor layer doped with a first conductive type dopant such as Si, ge, sn, se, te, etc. The first conductive reflective layer 201 may be a DBR layer having a thickness of λ/4n by alternately arranging different semiconductor layers.
The second conductive reflective layer 203 in this embodiment mode may be provided as at least one of a group III-V or group II-VI compound semiconductor doped with a dopant of the second conductivity type. For example, the second conductive reflective layer 203 may be one of the group consisting of GaAs, gaAl, inP, inAs, gaP. The second conductive reflective layer 203 may be formed of a semiconductor material of a composition formula having AlxGa1-xAs (0 <x <1)/AlyGa 1-yAs (0 <y <1) (y < x). The second conductive reflective layer 203 may be a p-type semiconductor layer having a second conductive type dopant such as p-type dopants of Mg, zn, ca, sr, and Ba. The second conductive reflective layer 203 may be a DBR layer having a thickness of λ/4n by alternately arranging different semiconductor layers.
In the above embodiment, the first conductive reflective layer 201 is an n-type semiconductor layer, and the second conductive reflective layer 202 is a P-type semiconductor layer, thereby forming a P-n structure; it is understood that, in other embodiments, the first conductive reflective layer 201 may be a p-type semiconductor layer doped with a p-type dopant, and accordingly, the second conductive reflective layer 202 may be an n-type semiconductor layer doped with an n-type dopant, and the effects of the present embodiment can be achieved.
In order to ensure the insulation between the second electrode 40 and the first electrode 30, as shown in fig. 2 and 3, the first surface 101 is further disposed with an insulating layer 206 in the present embodiment, and the insulating layer 206 may cover the gap between the adjacent light emitting elements 200, so as to avoid short circuit caused by contact between the second electrode 40 and the first conductive reflective layer 201 when disposed.
The insulating layer 206 may be formed of a material selected from the group consisting of SiO 2 、TiO 2 、Ta 2 O 5 、SiO x 、SiO x N y 、Si 3 N 4 And Al 2 O 3 Or the insulating layer 206 may be formed by depositing SiO 2 And TiO 2 The DBR layer formed by stacking a plurality of layers, or the insulating layer 206 may include a Spin On Glass (SOG) layer can achieve the effect of the present embodiment.
As shown in fig. 2 to 4, the insulating layer 206 may cover the side of the light emitting element 200, while the second electrode 40 may cover the side of the light emitting element 200 of the corresponding light emitting array 20. It is understood that since the emitting laser of the above embodiment adopts a back-surface emitting form, heat is concentrated inside the second conductive reflective layer 203. In order to improve the heat dissipation effect of the second conductive reflective layer 203, the second electrode 40 may cover the insulating layer 206 on the side surface of the light emitting element 200, so that heat can be simultaneously conducted out through the surface of the second conductive reflective layer 203 away from the substrate 10 and the two side surfaces of the second conductive reflective layer 203, thereby significantly improving the heat dissipation performance.
As shown in fig. 3, in order to avoid short circuit between the second electrodes 40 of the adjacent light emitting elements 200, the insulating layer 206 may cover the first ohmic contact layer 301 on the surface of the first conductive reflective layer 201, so as to form a bump structure, which can isolate the second electrodes 40 of the adjacent light emitting elements 200, thereby ensuring the insulating property and avoiding the adverse effect of the second electrodes 40 covering the side surfaces of the light emitting elements 200.
The first electrode 30 and the second electrode 40 in the above embodiment may be formed of a material selected from the group consisting of Ag, ni, al, rh, pd, ir, ru, mg, zn, pt, au, hf, ti, W, cr, ge, and those alloys including two or more of the above materials. The first electrode 30 and the second electrode 40 may be formed of one or more layers, and the effects of the present embodiment can be achieved.
Because the first electrode 30 is arranged on the substrate 10, the second electrode 40 is arranged on one side of the light-emitting element 200, which is far away from the substrate 10, and the lighting of a specific partition is realized through the first electrode 30 and the second electrode 40, a space for bonding gold wires does not need to be reserved between the light-emitting elements 200, and the integration of the light-emitting device is effectively improved; and no gold wire or strip metal exists in the addressing interval, so that parasitic resistance and parasitic inductance of the system are effectively avoided, and the quick response speed of the VCSEL is ensured.
Since the second electrode 40 is disposed on a side of the light emitting element 200 away from the substrate 10, that is, the second electrode 40 is located on a side opposite to the light emitting direction of the light emitting element 200, the second electrode 40 does not need to be perforated to leave a path for emitting laser light, so that an increase in resistance can be avoided; meanwhile, the second electrode 40 can be arranged to be thicker so as to further reduce resistance, and the integration of the system is not influenced, and the laser emitting empty emission is not influenced, so that the problem of uneven injection caused by resistance is effectively solved. In particular, when the LED chip is applied to a chip with a larger size, for example, a light-emitting chip with a size of more than or equal to 2mm, a more remarkable light-emitting uniformity optimization effect can be brought.
In addition, the heat generated during the operation of the active layer 202 in the surface emitting laser device of the above embodiment can be dissipated through the first electrode 30 and the second electrode 40, which effectively improves the heat dissipation performance of the device compared to the conventional partitioned laser device that needs to dissipate heat through the substrate 10 with higher thermal resistance.
It should be understood that the array of the light emitting devices 200 and the partition of the light emitting array 20 are not limited in the present application, and in the above embodiment, the substrate 10 has a plurality of rows and columns of the light emitting devices 200 arrayed on the surface thereof, and each row of the light emitting devices 200 is a light emitting array 20; in other embodiments, the light emitting elements 200 may also adopt other arbitrary arrangement array manners, for example, as shown in fig. 5, fig. 5 is a schematic structural diagram of another embodiment of the surface-emitting laser device of the present application, each light emitting element 200 may be used as one light emitting array 20, that is, each light emitting element 200 may be disposed with one separate second electrode 40, so as to implement separate lighting of the light emitting elements 200, at this time, 2D addressing lighting can be implemented, and one light emitting element 200 is lighted each time, so as to meet requirements of different application scenarios; or the light emitting elements 200 in any region may be used as a light emitting array 20, and the second electrodes 40 with corresponding shapes are arranged, so that the effect of the embodiment can be achieved, the flexibility of partitioning is effectively improved, and the limitation of the conventional partitioning technology is avoided.
Fig. 6 is a schematic structural view of an embodiment of the surface-emitting laser package structure according to the present disclosure.
The package structure includes the surface-emitting laser device of any of the above embodiments and the base plate 50 provided on the first surface 101 side of the substrate 10.
The substrate 50 may be a PCB substrate 50, or may be another substrate 50 integrated with a circuit, and the substrate 50 has a first bonding electrode 501 and a plurality of second bonding electrodes 502 disposed thereon.
Wherein, the first bonding electrode 501 is used for bonding with the first electrode 30; the plurality of second bonding electrodes 502 correspond to the plurality of second electrodes 40 one by one, and each second bonding electrode 502 is bonded to the corresponding second electrode 40.
The substrate 50 is also arranged with connection lines disposed between the first bonding electrode 501 and the plurality of second bonding electrodes 502.
The first electrode 30 and the second electrode 40 may be looped by the first bonding electrode 501 and the second bonding electrode 502 of the substrate 50, thereby achieving the lighting of the light emitting array 20.
The corresponding second bonding electrode 502 is selected based on the light emitting array 20 to be addressed, and the first bonding electrode 501 and the corresponding second bonding electrode 502 are controlled to be conductive through the connecting line of the substrate 50, so that the lighting of the addressed light emitting array 20 can be realized, and the partition control is realized.
It can be understood that the surface emitting laser package of the present application implements the partition control by wiring on the substrate 50 without wiring on the chip side, thereby being able to increase the number of partition areas without increasing the chip wiring area.
The present application further provides a light emitting device, including the surface emitting laser device of any of the above embodiments, which can implement partitioned lighting of the light emitting elements 200 in any region by designing an array manner of the light emitting elements 200 and a partition manner of the light emitting array 20, for example, the light emitting elements 200 can be lighted row by row, column by column, one by one, or one by one, so as to effectively control a light emitting region to save system power consumption, and improve heat dissipation performance and light emitting efficiency.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A surface-emitting laser device characterized by comprising:
the substrate comprises a first surface and a second surface which are arranged oppositely;
a plurality of light emitting arrays formed on the first surface, each of the light emitting arrays including at least one light emitting element capable of emitting light in a direction in which the first surface points to the second surface;
a first electrode formed on the first surface, the first electrode being electrically connected to all of the light emitting elements of the plurality of light emitting arrays;
the plurality of second electrodes correspond to the plurality of light emitting arrays one to one, each second electrode is formed on one side surface, away from the substrate, of the corresponding light emitting array, and the second electrodes are electrically connected with all the light emitting elements of the corresponding light emitting array;
the light emitting element includes:
a first conductive reflective layer disposed on the substrate;
an active layer disposed on the first conductive reflective layer;
the first electrode is electrically connected with the first conductive reflecting layer;
the first conductive reflecting layer of the light-emitting element arranged on the substrate is connected into a whole, and the first electrode is arranged on the first conductive reflecting layer and is electrically connected with the first conductive reflecting layer;
the first ohmic contact layer is arranged on one side of the first conductive reflection layer, which is far away from the substrate, and is electrically connected with the first conductive reflection layer, the first electrode is arranged on one side of the first ohmic contact layer, which is far away from the first conductive reflection layer, and is electrically connected with the first ohmic contact layer;
further comprising an insulating layer disposed on the first surface and covering a gap adjacent to the light emitting element and a side surface of the light emitting element;
the second electrode covers the insulating layer on the side face of the light-emitting element of the corresponding light-emitting array, and the insulating layer covers the first ohmic contact layer to form a boss structure.
2. The surface-emitting laser device according to claim 1, wherein the light-emitting elements further comprise a second conductive reflective layer formed on a side of the active layer facing away from the first conductive reflective layer, the second electrode being electrically connected to the second conductive reflective layers of all the light-emitting elements of the corresponding light-emitting array.
3. The surface-emitting laser device according to claim 2, wherein the light-emitting element further comprises a second ohmic contact layer formed on a side of the second conductive reflective layer facing away from the active layer, the second ohmic contact layer being electrically connected to the second conductive reflective layer, and the second electrode being electrically connected to the second ohmic contact layer.
4. The surface-emitting laser device according to claim 1, wherein said first surface of said substrate is uniformly arrayed with a plurality of rows and columns of said light-emitting elements, each of said light-emitting arrays comprising one, one row, one column, a plurality of adjacent rows or a plurality of adjacent columns of said light-emitting elements.
5. A surface-emitting laser device according to claim 1, wherein each of said light-emitting arrays comprises at least two of said light-emitting elements, and said plurality of light-emitting arrays are configured to be individually operable to achieve zone control.
6. A surface-emitting laser device according to claim 1, characterized in that a side of said first electrode facing away from said substrate and a side of said second electrode facing away from said substrate are located on the same plane parallel to said first surface.
7. A surface-emitting laser device according to claim 1, wherein said second electrode is a metal sheet and an orthographic projection of the second electrode on said first surface covers an orthographic projection of the corresponding said light-emitting array on said first surface.
8. A surface-emitting laser package structure, comprising:
the surface-emitting laser device of any one of claims 1 to 7;
a base plate disposed on the first surface side of the substrate, the base plate including:
a first bonding electrode bonded to the first electrode;
the plurality of second bonding electrodes correspond to the plurality of second electrodes one by one, and each second bonding electrode is bonded with the corresponding second electrode;
and a connection line disposed between the first bonding electrode and the plurality of second bonding electrodes.
9. A light emitting device characterized by comprising the surface emitting laser device according to any one of claims 1 to 7.
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| CN202211359547.1A CN115473120A (en) | 2022-11-02 | 2022-11-02 | Surface emitting laser device, package structure, and light emitting device |
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| CN202211359547.1A CN115473120A (en) | 2022-11-02 | 2022-11-02 | Surface emitting laser device, package structure, and light emitting device |
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Application publication date: 20221213 |