CN115470916A - Quantum device, quantum device packaging device and quantum computer system - Google Patents
Quantum device, quantum device packaging device and quantum computer system Download PDFInfo
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Abstract
The application discloses a quantum device, a quantum device packaging device and a quantum computer system, wherein the quantum device comprises a substrate; a quantum processor on the substrate, the quantum processor comprising a plurality of electrodes, each electrode for receiving a drive signal; a plurality of first signal transmission circuits located on the substrate and connected to the electrodes; each first signal transmission circuit is used for transmitting the driving signal; wherein the plurality of first signal transmission circuits are symmetrically arranged around the quantum processor on the substrate ring. The quantum device and the driving method thereof improve the integration level of the quantum device and the driving precision of the quantum processor.
Description
Technical Field
The application belongs to the quantum field, and particularly relates to a quantum device, a quantum device packaging device and a quantum computer system.
Background
Semiconductor quantum processors and quantum computing and their applications are hot spots of international research. The semiconductor quantum processor usually works in a low temperature environment, for example, 50mK temperature, and is fixed in the refrigerator by using a PCB board or a packaging device to carry the semiconductor quantum processor, and receives various measurement and control signals through a measurement and control line. When the semiconductor quantum processor works, a plurality of paths of measurement and control signals, such as direct current driving signals, microwave driving signals, reading signals and the like, need to be provided, and the number of the required driving signals is correspondingly increased along with the increase of the number of quantum dots on the semiconductor quantum processor, so that measurement and control circuits packaged on a PCB or a packaging device are more and more complex, the number of components on the measurement and control circuits is more and more, the integration is difficult, the driving signals on a plurality of measurement and control circuits are easy to mutually crosstalk, and the expansion and the driving precision of the semiconductor quantum processor are influenced.
Therefore, how to improve the integration and driving precision of the multi-bit semiconductor quantum processor becomes a technical problem to be solved in the field.
Disclosure of Invention
The quantum device, the quantum device packaging device and the quantum computer system are provided, and the integration level of the quantum device and the driving precision of a quantum processor are improved.
The technical scheme of the application is as follows:
an aspect of the present application provides a quantum device, including: a substrate; a quantum processor on the substrate, the quantum processor comprising a plurality of electrodes, each electrode for receiving a drive signal; a plurality of first signal transmission circuits located on the substrate and connected to the electrodes; each first signal transmission circuit is used for transmitting the driving signal; wherein the plurality of first signal transmission circuits are symmetrically arranged around the quantum processor on the substrate ring.
The quantum device as described above, preferably, the driving signal comprises a first direct current driving signal and/or a microwave driving signal; the first signal transmission circuit comprises a signal synthesis unit and a first signal transmission line which are connected in sequence;
the first input end of the signal synthesis unit is used for receiving and transmitting the first direct current driving signal, and the second input end of the signal synthesis unit is used for receiving and transmitting the microwave driving signal; the output end of the signal synthesis unit outputs a synthesis driving signal comprising the first direct current driving signal and the microwave driving signal;
the first end of the first signal transmission line is connected with the output end of the signal synthesis unit, and the second end of the first signal transmission line is used for being connected with the electrode of the quantum processor.
As described above for the quantum device, preferably, the signal synthesizing unit includes a first resistor and a first capacitor;
a first end of the first resistor receives the first direct current driving signal, and a second end of the first resistor is connected with a first end of the first signal transmission line;
the first end of the first capacitor is used for receiving the microwave driving signal, and the second end of the first capacitor is connected with the first end of the first signal transmission line.
In the quantum device, preferably, the signal synthesizing unit further includes a second capacitor, a first end of the second capacitor is connected to the first end of the first resistor, and a second end of the second capacitor is grounded.
As described above for the quantum device, preferably, the first signal transmission line comprises a microwave coaxial line.
The quantum device as described above preferably further includes a plurality of first connectors, each of the first connectors is connected to the second input terminal of the signal synthesis unit, and is configured to receive the microwave driving signal.
As mentioned above for the quantum device, preferably, the first connector comprises an SMP connector or an SMA connector or an SSMA connector.
The quantum device as described above preferably further includes a plurality of second signal transmission circuits located on the substrate and connected to the electrodes, each of the second signal transmission circuits being configured to receive and transmit a second dc driving signal.
As the quantum device described above, preferably, the second signal transmission circuit includes a second transmission line and a third capacitor;
the first end of the second transmission line is used for receiving the second direct current driving signal, and the second end of the second transmission line is connected with the electrode;
the first end of the third capacitor is connected with the first end of the second transmission line, and the second end of the third capacitor is grounded.
As described above for the quantum device, preferably, the second transmission line includes a microstrip line or a stripline.
The application provides a quantum device packaging device on the other hand, which comprises the quantum device and a packaging shell, wherein the quantum device is positioned in the packaging shell.
In another aspect, the present application provides a quantum computer system including the quantum device packaging apparatus.
Compared with the prior art, the method has the following beneficial effects:
the application provides a quantum device, includes: a substrate; a quantum processor on the substrate, the quantum processor comprising a plurality of electrodes for receiving a drive signal; a plurality of first signal transmission circuits located on the substrate and connected to electrodes of the quantum processor; each first signal transmission circuit is used for transmitting a first direct current driving signal and/or a microwave driving signal; wherein the first signal transmission circuits are arranged symmetrically around the quantum processor on the substrate ring. According to the quantum processor, the first direct current driving signal and/or the microwave driving signal for driving the quantum processor are/is transmitted to the electrodes of the quantum processor through the first signal transmission circuit, the number of lines and the number of the electrodes of the quantum processor are reduced through a signal synthesis principle, the first signal transmission circuit is symmetrically distributed around the quantum processor, mutual crosstalk among the microwave driving signals is weakened, and the driving precision of the quantum processor is improved.
Drawings
Fig. 1 is a schematic composition diagram of a quantum device according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a first signal transmission circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a signal synthesizing unit 1 according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a signal synthesizing unit 2 according to an embodiment of the present application;
fig. 5 is a schematic diagram of a second signal transmission circuit 1 according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of a second signal transmission circuit according to an embodiment of the present disclosure;
fig. 7 is a schematic circuit diagram of a quantum device according to an embodiment of the present disclosure.
Description of the reference numerals:
1-a substrate, 2-a quantum processor, 3-a first signal transmission circuit, 4-a second signal transmission circuit,
21-electrode, 31-signal synthesis unit, 32-first transmission line, 41-third capacitor, 42-second transmission line,
311-first resistor, 312-first capacitor, 313-second capacitor.
Detailed Description
The following detailed description is merely illustrative and is not intended to limit the embodiments and/or the application or uses of the embodiments. Furthermore, there is no intention to be bound by any expressed or implied information presented in the preceding "background" or "summary" sections or "detailed description" sections.
To further clarify the objects, aspects and advantages of embodiments of the present application, one or more embodiments are now described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a more thorough understanding of one or more embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details in various instances, and that the various embodiments are incorporated by reference into each other without departing from the scope of the present disclosure.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As shown in fig. 1, the present application proposes a quantum device comprising: a substrate 1; a quantum processor 2 located on the substrate 1, the quantum processor 2 comprising a plurality of electrodes 21, each electrode 21 for receiving a drive signal; a plurality of first signal transmission circuits 3 located on the substrate 1 and connected to the electrodes 21; each first signal transmission circuit 3 is used for transmitting a driving signal; wherein a plurality of the first signal transmission circuits 3 are arranged symmetrically around the quantum processor 2 on the substrate 1 ring.
The quantum processor 2 and the first signal transmission circuit 3 are integrated on a substrate 1, the first signal transmission circuit 3 is arranged on the substrate 1 around the quantum processor 2, and the first signal transmission circuit 3 is correspondingly added on the periphery of the quantum processor 2 on the substrate 1 along with the increase of the number of bits of the quantum processor 2, so that the space on the substrate 1 is effectively utilized, and the integration and the expansion are facilitated. And the first signal transmission circuits 3 are symmetrically arranged around the quantum processor 2, so that the electronic elements and the transmission line length in the first signal transmission circuits 3 are also symmetrical, and further, when the first signal transmission circuits 3 transmit driving signals, the mutual crosstalk among microwave driving signals is weakened, and the driving precision of the quantum processor 2 is improved.
As shown in fig. 2, as an implementation manner of the embodiment of the present application, the driving signal includes a first direct current driving signal and/or a microwave driving signal; the first signal transmission circuit 3 comprises a signal synthesis unit 31 and a first signal transmission line which are connected in sequence; a first input terminal of the signal synthesizing unit 31 is used for receiving and transmitting the first direct current driving signal, and a second input terminal of the signal synthesizing unit 31 is used for receiving and transmitting the microwave driving signal; an output terminal of the signal synthesizing unit 31 outputs a synthesized driving signal including the first direct current driving signal and the microwave driving signal; the first end of the first signal transmission line is connected with the output end of the signal synthesis unit 31, and the second end of the first signal transmission line 31 is used for connecting the electrode 21 of the quantum processor 2.
In order to ensure that the quantum processor 2 works, a first direct current driving signal and a microwave driving signal are required to be provided, wherein the first direct current driving signal is a voltage signal and is used for forming quantum dots on the quantum processor 2, the microwave driving signal is a microwave signal and is used for regulating and controlling the states of the quantum dots, the voltage signal and the microwave signal are required to be provided through different signal sources, two input ends of a signal synthesis unit 31 are adopted to respectively receive the first direct current driving signal and the microwave driving signal, the first direct current driving signal and the microwave driving signal are output through one output end, and then the first direct current driving signal and the microwave driving signal are transmitted to an electrode 21 of the quantum processor 2 through a first transmission line 31. The number of the electrodes 21 of the quantum processor 2 is reduced by adopting the signal synthesis unit 31 to realize the synthesis transmission of the two signals, so that the expansion difficulty of the quantum processor 2 is reduced.
As shown in fig. 3, as an implementation manner of the embodiment of the present application, the signal synthesizing unit 31 includes a first resistor 311 and a first capacitor 312; a first end of the first resistor 311 receives the first direct current driving signal, and a second end of the first resistor 311 is connected to a first end of the first signal transmission line; a first end of the first capacitor 312 is configured to receive the microwave driving signal, and a second end of the first capacitor 312 is connected to a first end of the first signal transmission line. Receiving the microwave driving signal by using the first capacitor 312, and ensuring that the first direct current driving signal flows to the first end of the first transmission line 31 along the second end of the first resistor 311 by using the direct current blocking function of the capacitor; and the first resistor 311 is adopted to receive the first direct current driving signal, and impedance matching of the resistor is utilized to enable the microwave driving signal to flow to the first end of the first transmission line 31 along the second end of the first capacitor 312, so that the first direct current driving signal and the microwave driving signal are ensured to be transmitted to the electrode 21 of the quantum processor 2 along the first transmission line 31. The RC circuit is adopted to realize the synthesis and transmission of the first direct current driving signal and the microwave driving signal, so that the cost is low and the integration is easy.
As an implementation manner of the embodiment of the present application, the signal combining unit 31 further includes a second capacitor 313, a first end of the second capacitor 313 is connected to the first end of the first resistor 311, and a second end of the second capacitor 313 is connected to the ground. The first end of the first resistor 311 is used for receiving a first direct current driving signal, the second capacitor 313 is connected to the first end of the first resistor 311, and the second end of the second capacitor 313 is grounded, so that the filtering effect on the first direct current driving signal is realized, and the stability of the first direct current driving signal is ensured.
As an implementation of this embodiment of the application, the first signal transmission line includes a microwave coaxial line. The microwave coaxial line has strong anti-interference capability and stable performance in an extremely low temperature environment, and the first direct current driving signal and the microwave driving signal are transmitted by the microwave coaxial line, so that the stability of the signals is ensured.
As an implementation manner of the embodiment of the present application, the microwave driving circuit further includes a plurality of first connectors, each of the first connectors is connected to the second input end of the signal synthesizing unit 31, and is configured to receive the microwave driving signal. The microwave driving signals are high-frequency signals, and each path of microwave driving signals are transmitted by adopting an independent first connector, so that crosstalk between the signals is reduced.
As an implementation of the embodiment of the present application, the first connector includes an SMP connector or an SMA connector or an SSMA connector. In the communication field, the signal connectors are various, in this embodiment, the first connector is preferably an SMP connector, an SMA connector or an SSMA connector, and is small in size, easy to integrate on the substrate 1, stable in structure and performance, and in other embodiments, other devices with similar functions may be selected, and are not limited herein.
As shown in fig. 5, as an implementation manner of the embodiment of the present application, the present application further includes a plurality of second signal transmission circuits 4 located on the substrate 1 and connected to the electrodes 21, where each of the second signal transmission circuits 4 is configured to receive and transmit a second direct current driving signal. When the quantum processor 2 adopts a semiconductor system, a plurality of voltage driving signals are required for forming each quantum dot, the number of the required voltage driving signals is far larger than that of microwave driving signals for the semiconductor quantum processor, and in addition to the transmission of the direct current driving signals by the first signal transmission circuit 3, the second signal transmission circuit 4 is also adopted to receive and transmit second direct current driving signals to the electrodes 21 of the quantum processor 2, so that the driving signals are ensured to be provided for the quantum processor 2 with more bits.
As shown in fig. 6, as an implementation manner of the embodiment of the present application, the second signal transmission circuit 4 includes a second transmission line 42 and a third capacitor 41; a first end of the second transmission line 42 is configured to receive the second dc driving signal, and a second end of the second transmission line 42 is connected to the electrode 21; a first end of the third capacitor 41 is connected to a first end of the second transmission line 42, and a second end of the third capacitor 41 is grounded. The third capacitor 41 is connected with the first end of the second transmission line 42, the second end of the third capacitor 41 is grounded, the filtering effect on the second direct current driving signal is achieved, the stability of the second direct current driving signal is ensured, and the second direct current driving signal is transmitted to the electrode 21 of the quantum processor 2 through the second transmission line 42, so that the quantum processor 2 is driven.
The circuit diagram shown in fig. 7 is a schematic circuit diagram of a quantum device of the present embodiment, and includes a quantum processor 2, a plurality of first signal transmission circuits 3 and a plurality of second signal transmission circuits 4 connected to electrodes of the quantum processor 2, each of the first signal transmission circuits receiving a first direct current drive signal and/or a microwave drive signal through a separate first connector; each of the second signal transmission circuits 4 is configured to receive the first dc driving signal, and thus a pin array connector is used, and one pin array connector is connected to a plurality of second signal transmission circuits 4. It can be understood that the first signal transmission circuit 3 transmits a high-frequency driving signal, the second signal transmission circuit 4 transmits a low-frequency direct-current driving signal, and the corresponding signal transmission circuits are respectively arranged according to the types of the driving signals and respectively adopt corresponding signal connectors, so that the transmission quality of the driving signals is improved, and the driving precision of the quantum processor 2 is further improved.
In addition, the first signal transmission circuits 3 are arranged on the substrate around the quantum processors 2, the first signal transmission circuits 3 are correspondingly added around the quantum processors 2 on the substrate 1 along with the increase of the bits of the quantum processors 2, the space of the substrate is effectively utilized, and the integration and the expansion are convenient, and the first signal transmission circuits 3 are symmetrically arranged around the quantum processors 2, so that the lengths of electronic elements and transmission lines in the first signal transmission circuits 3 are also symmetrical, and further, when the first signal transmission circuits 3 transmit driving signals, the mutual crosstalk among microwave driving signals is weakened, and the driving precision of the quantum processors 2 is further improved.
As an implementation manner of the embodiment of the present application, the second transmission line 42 includes a microstrip line or a stripline. In this embodiment, the second dc driving signal transmitted on the second transmission line 42 is a dc voltage signal, and is integrated on the substrate 1 by using a microstrip line or a stripline for signal transmission, which is easy for wiring and integration.
Based on the same application concept, the embodiment of the application also provides a quantum device packaging device which comprises any one of the quantum devices and a packaging shell, wherein the quantum device is positioned in the packaging shell.
Based on the same application concept, the embodiment of the application also provides a quantum computer system which comprises the quantum device packaging device.
The construction, features and functions of the present application have been described in detail and illustrated in the drawings, the present application is not limited to the embodiments, but rather the invention is intended to cover all modifications, equivalents and equivalents falling within the spirit and scope of the present application.
Claims (12)
1. A quantum device, comprising:
a substrate;
a quantum processor on the substrate, the quantum processor comprising a plurality of electrodes, each electrode for receiving a drive signal;
a plurality of first signal transmission circuits located on the substrate and connected to the electrodes;
each first signal transmission circuit is used for transmitting the driving signal;
wherein the plurality of first signal transmission circuits are arranged symmetrically around the quantum processor on the substrate ring.
2. The quantum device of claim 1, wherein the drive signal comprises a first dc drive signal and/or a microwave drive signal; the first signal transmission circuit comprises a signal synthesis unit and a first signal transmission line which are connected in sequence;
the first input end of the signal synthesis unit is used for receiving and transmitting the first direct current driving signal, and the second input end of the signal synthesis unit is used for receiving and transmitting the microwave driving signal; the output end of the signal synthesis unit outputs a synthesis driving signal comprising the first direct current driving signal and the microwave driving signal;
the first end of the first signal transmission line is connected with the output end of the signal synthesis unit, and the second end of the first signal transmission line is connected with the electrode of the quantum processor.
3. The quantum device of claim 2, wherein the signal synthesis unit comprises a first resistor and a first capacitor;
a first end of the first resistor receives the first direct current driving signal, and a second end of the first resistor is connected with a first end of the first signal transmission line;
the first end of the first capacitor is used for receiving the microwave driving signal, and the second end of the first capacitor is connected with the first end of the first signal transmission line.
4. The quantum device of claim 3, wherein the signal synthesis unit further comprises a second capacitor, a first end of the second capacitor is connected to the first end of the first resistor, and a second end of the second capacitor is connected to ground.
5. The quantum device of claim 2, wherein the first signal transmission line comprises a microwave coaxial line.
6. The quantum device of claim 2, further comprising a plurality of first connectors, each of the first connectors being connected to the second input terminal of the signal synthesis unit for receiving the microwave driving signal.
7. The quantum device of claim 6, wherein the first connector comprises an SMP connector or an SMA connector or an SSMA connector.
8. The quantum device of claim 1, further comprising a plurality of second signal transmission circuits on the substrate and connected to the electrodes, each second signal transmission circuit for receiving and transmitting a second dc drive signal.
9. The quantum device of claim 8, wherein the second signal transmission circuit comprises a second transmission line and a third capacitance;
the first end of the second transmission line is used for receiving the second direct current driving signal, and the second end of the second transmission line is connected with the electrode;
the first end of the third capacitor is connected with the first end of the second transmission line, and the second end of the third capacitor is grounded.
10. The quantum device of claim 9, wherein the second transmission line comprises a microstrip line or a stripline.
11. A quantum device packaging apparatus comprising a quantum device as claimed in any one of claims 1 to 10, and a packaging case, the quantum device being located within the packaging case.
12. A quantum computer system comprising the quantum device packaging apparatus of claim 11.
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Address after: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province Applicant after: Benyuan Quantum Computing Technology (Hefei) Co.,Ltd. Address before: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province Applicant before: ORIGIN QUANTUM COMPUTING COMPANY, LIMITED, HEFEI |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |