CN115458640B - Display device manufacturing method, display device and display equipment - Google Patents

Display device manufacturing method, display device and display equipment Download PDF

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Publication number
CN115458640B
CN115458640B CN202211225938.4A CN202211225938A CN115458640B CN 115458640 B CN115458640 B CN 115458640B CN 202211225938 A CN202211225938 A CN 202211225938A CN 115458640 B CN115458640 B CN 115458640B
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light
pixel array
layer
display device
matrix
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CN115458640A (en
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邱成峰
符民
莫炜静
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Foshan Sitan Semiconductor Technology Co ltd
Shenzhen Stan Technology Co Ltd
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Foshan Sitan Semiconductor Technology Co ltd
Shenzhen Stan Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The application discloses a display device manufacturing method, a display device and display equipment, and relates to the technical field of semiconductors. The preparation method of the display device comprises the following steps: preparing an initial architecture of a pixel array; manufacturing a photoresist matrix on the light-emitting side of the pixel array initial framework, so that a first hollow area in the photoresist matrix covers the light-emitting area of the pixel array initial framework; and manufacturing a light-transmitting film layer on one side of the photoresist matrix far away from the pixel array initial framework, so that the refractive index of the light-transmitting film layer is smaller than that of a structure connected with the light-transmitting film layer in the pixel array initial framework. The display device manufactured by the manufacturing method of the display device can improve optical crosstalk.

Description

Display device manufacturing method, display device and display equipment
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a display device manufacturing method, a display device, and a display device.
Background
Currently, micro light emitting diodes (Micro-Light Emitting Diode, micro-LEDs) mainly include two architectures, lateral and vertical. The vertical structure has the advantages of high luminous efficiency, no side light and the like.
However, in the related art, optical crosstalk of the Micro-LED display device of the vertical structure is serious, which affects the display effect of the Micro-LED display device.
Disclosure of Invention
The application provides a display device manufacturing method, a display device and display equipment, so as to at least improve optical crosstalk.
In a first aspect, the present application provides:
a method of manufacturing a display device, comprising:
preparing an initial architecture of a pixel array;
manufacturing a photoresist matrix on the light-emitting side of the pixel array initial framework, so that a first hollow area in the photoresist matrix covers the light-emitting area of the pixel array initial framework;
and manufacturing a light-transmitting film layer on one side of the photoresist matrix far away from the pixel array initial framework, so that the refractive index of the light-transmitting film layer is smaller than that of a structure connected with the light-transmitting film layer in the pixel array initial framework.
It can be understood that each light emitting region in the initial architecture of the pixel array can respectively correspond to a light emitting source (i.e. a pixel unit in the initial architecture of the pixel array) for generating light. For the light generated by a light-emitting source, a part of the light can pass through the light-transmitting film layer without meeting the total reflection condition, and among the part of the light, a part of the light can exit through a light-emitting area opposite to the light-emitting source, and another part of the light can be projected to and absorbed by the light-resistant matrix. Another part of the light rays meeting the total reflection condition can be totally reflected at the interface of the light-transmitting film layer and the initial framework of the pixel array. Therefore, the light can be prevented from being emitted from the position outside the light emitting area of the light emitting source, and the condition that the light is emitted from the non-corresponding light emitting area is improved. Therefore, the optical crosstalk can be improved, and the contrast ratio and the display effect of the display device can be improved.
In some possible embodiments, the fabricating a photoresist matrix on the light emitting side of the initial pixel array structure, such that the first hollow area in the photoresist matrix covers the light emitting area of the initial pixel array structure includes:
stripping the substrate in the initial architecture of the pixel array to expose the U-GaN layer in the initial architecture of the pixel array;
etching the U-GaN layer to obtain a U-GaN matrix, and enabling the U-GaN matrix to cover the light emergent region;
manufacturing a photoresist step in a second hollowed-out area of the U-GaN matrix;
and stripping the U-GaN step in the U-GaN matrix.
In some possible embodiments, the fabricating a photoresist step in the second hollowed-out region of the U-GaN matrix includes:
coating a photoresist material on the U-GaN matrix, and filling the second hollowed-out area with the photoresist material;
the photoresist is etched to expose the U-GaN step.
It can be appreciated that the photoresist matrix prepared by the process can reduce the processing precision requirement when coating the photoresist material and the processing difficulty. On the other hand, uniformity of the surface of the photoresist on the side away from the pixel array can also be ensured.
In some possible embodiments, the fabricating a light-transmitting film layer on a side of the photoresist matrix away from the initial architecture of the pixel array, so that a refractive index of the light-transmitting film layer is smaller than that of a structure connected to the light-transmitting film layer in the initial architecture of the pixel array, includes:
and at least manufacturing a current diffusion layer on one side of the photoresist matrix far from the initial framework of the pixel array.
Therefore, the light-transmitting film layer can be electrically connected with the N-GaN layer in the initial framework of the pixel array, the conductivity of the common N electrode in the display device is improved, and the display effect of the display device is improved.
In some possible embodiments, the display device manufacturing method further includes:
and manufacturing a dimming layer on one side of the light-transmitting film layer far away from the initial framework of the pixel array, so that the dimming layer at least covers part of the light-emitting area.
In some possible embodiments, the fabricating a dimming layer on a side of the light-transmitting film layer away from the initial architecture of the pixel array, so that the dimming layer at least covers a portion of the light-emitting area includes:
printing a light modulation material on a preset position of one side of the light transmission film layer far away from the photoresistance matrix to manufacture the light modulation layer;
the dimming material comprises quantum dot slurry and a heat conducting medium, wherein the heat conducting medium is mixed in the quantum dot slurry.
Accordingly, the overall heat conductivity of the dimming layer can be improved, the heat dissipation efficiency of the display device is accelerated, the problem in the working process of the heat dissipation device is further reduced, and the service life is prolonged.
In some possible embodiments, the printing the dimming material on the predetermined position of the light-transmitting film layer away from the side of the photoresist matrix to form the dimming layer includes:
printing a first light modulation material on a first preset position of one side, far away from the photoresistance matrix, of the light transmission film layer, wherein the first light modulation material comprises first quantum dot slurry and heat conducting media, and the heat conducting media are mixed in the first quantum dot slurry;
and/or the number of the groups of groups,
printing a second light modulation material on a second preset position of one side, far away from the photoresistance matrix, of the light transmission film layer, wherein the second light modulation material comprises second quantum dot slurry and heat conducting media, and the heat conducting media are mixed in the second quantum dot slurry.
Based on the scheme, the light can be converted through the dimming layer, and the full-color effect of the display device can be achieved.
In some possible embodiments, the method for manufacturing a display device further includes:
and manufacturing a protective layer on one side of the dimming layer far away from the initial framework of the pixel array.
The protective layer can provide packaging and protection functions for the dimming layer and the light-transmitting film layer.
In a second aspect, the present application also provides a display device including:
the pixel array comprises a light emitting side and a light emitting area;
the light-emitting device comprises a pixel array, a light-emitting side, a light-resistance matrix and a light-emitting layer, wherein the light-resistance matrix is arranged on the light-emitting side of the pixel array and comprises a first hollow area, and the first hollow area covers the light-emitting area; a kind of electronic device with high-pressure air-conditioning system
The light-transmitting film layer is arranged on one side, far away from the pixel array, of the photoresist matrix, and the refractive index of the light-transmitting film layer is smaller than that of a structure connected with the light-transmitting film layer in the pixel array.
In some possible embodiments, the light-transmissive film layer includes at least a current diffusion layer.
In some possible embodiments, the display device further includes a dimming layer covering at least a portion of the light emitting region.
In some possible embodiments, the dimming layer includes a quantum dot slurry and a heat conducting medium mixed in the quantum dot slurry.
In some possible embodiments, the quantum dot slurry includes a first quantum dot slurry and a second quantum dot slurry, each of the first quantum dot slurry and the second quantum dot slurry having the heat-conducting medium mixed therein;
the first quantum dot slurry and the second quantum dot slurry are covered on different light emergent areas.
In some possible embodiments, the display device further includes a protective layer located on a side of the dimming layer remote from the pixel array.
In a third aspect, the present application also provides a display apparatus including the display device provided in the above embodiments.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram showing the structure of a related art Micro-LED display device;
FIG. 2 is a schematic flow chart of a method of manufacturing a display device in some embodiments;
FIG. 3 is a schematic diagram of a manufacturing flow of an initial architecture of a pixel array in some embodiments;
FIG. 4 illustrates a schematic diagram of the structure of an epitaxial layer in some embodiments;
FIG. 5 illustrates a schematic diagram of the structure of a light emitting step in some embodiments;
FIG. 6 illustrates a schematic diagram of the structure of a passivation layer in some embodiments;
FIG. 7 illustrates a schematic diagram of the architecture of an initial architecture of a pixel array in some embodiments;
FIG. 8 is a schematic diagram of a structure of a pixel array after bonding a driving board to an initial structure of the pixel array according to some embodiments;
FIG. 9 is a schematic flow chart of preparing a photoresist matrix in some embodiments;
FIG. 10 illustrates a schematic diagram of a display device structure after the substrate is peeled off in some embodiments;
FIG. 11 is a schematic diagram showing the structure of a U-GaN matrix in some embodiments;
FIG. 12 is a schematic diagram of a display device structure after coating with photoresist in some embodiments;
FIG. 13 is a schematic diagram of a display device after etching photoresist in some embodiments;
FIG. 14 is a schematic diagram showing the structure of a photoresist matrix in some embodiments;
FIG. 15 is a schematic view of the structure of a light transmissive film layer in some embodiments;
fig. 16 illustrates a schematic flow chart of preparing a dimming layer in some embodiments;
FIG. 17 is a schematic diagram of a display device after a dimming layer is fabricated in some embodiments;
fig. 18 is a schematic diagram showing the structure of a display device in some embodiments.
Description of main reference numerals:
10-initial architecture of pixel array; 101-light-emitting side; an 11-pixel array; 1101-pixel unit; a 111-epitaxial layer; 1111-N-GaN layer; 1112-quantum well light emitting layer; 1113-P-GaN layer; 11101-a light-emitting step; 11102-light exit zone; 112-a transparent conductive layer; 113-an electrode layer; 114-a passivation layer; 1141-grooving; 115-a pad layer; 12-a substrate; 13-U-GaN layer; 20-driving plate; a 30-U-GaN matrix; 31-U-GaN steps; 32-a second hollow region; 40-a photoresist matrix; 401-photoresist material; 41-photoresist steps; 42-first hollowed-out area; 50-a light-transmitting film layer; 51-groove structure; 60-interface; 70-a dimming layer; 71-a first dimming material; 72-a second dimming material; 73-a heat transfer medium; 80-a protective layer; 91-GaN layer; 92-sapphire substrate; 93-polyvinyl chloride layer.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
As shown in fig. 1, a structure diagram of a Micro-LED display device of a vertical structure in the related art is shown. The light is totally reflected at the interface position of the GaN layer 91 and the sapphire substrate 92. Some of the totally reflected light is refracted and emitted from the polyvinyl chloride layer 93 (Polyvinyl chloride, PV) at the non-lit pixel position, thereby forming optical crosstalk. And the color quantum dot cover plate (not shown) integrated on the outer layer of the Micro-LED display device can generate more serious optical crosstalk, so that the whole display effect of the Micro-LED display device is affected.
Embodiments provide a method for manufacturing a display device, which can improve optical crosstalk and improve display effect of the display device.
As shown in fig. 2, the display device manufacturing method may include the steps of:
s10, preparing the pixel array initial framework 10.
Referring again to fig. 3 and 7, the pixel array initial architecture 10 may include a substrate 12, a U-GaN layer 13, and a pixel array 11, and the U-GaN layer 13 may be located between the substrate 12 and the pixel array 11. The pixel array 11 may include a plurality of pixel units 1101 distributed in an array. In some embodiments, step S10 may specifically include:
s11, providing a substrate 12.
Referring again to fig. 4, substrate 12 may be used as a growth carrier for pixel cell 1101 and may be used to carry other structures in pixel cell 1101. In some embodiments, the substrate 12 may be selected from sapphire (Al 2 O 3 ) A substrate.
In other embodiments, substrate 12 may be one of a silicon (Si) substrate or a silicon carbide (SiC) substrate.
And S12, sequentially growing a U-GaN layer 13 and an epitaxial layer 111 on one side of the substrate 12.
The epitaxial layer 111 may include an N-GaN layer 1111, a quantum well light emitting layer 1112, and a P-GaN layer 1113, which are sequentially stacked. Wherein the N-GaN layer 1111 is located between the quantum well light emitting layer 1112 and the U-GaN layer 13.
In an embodiment, the U-GaN layer 13, the N-GaN layer 1111, the quantum well light emitting layer 1112, and the P-GaN layer 1113 may be grown by different or the same epitaxial growth methods, respectively. For example, the growth may be performed by one of epitaxial growth methods such as a vapor phase epitaxial growth method, a liquid phase epitaxial growth method, or a molecular beam epitaxial growth method, respectively.
S13, etching the epitaxial layer 111 to obtain a plurality of light emitting steps 11101 distributed in an array.
As further shown in fig. 5, epitaxial layer 111 may be etched from a side of epitaxial layer 111 remote from substrate 12 and to N-GaN layer 1111. In some embodiments, epitaxial layer 111 may be etched by a photolithographic process. It is understood that the light emitting step 11101 may be located at a position where a corresponding light emitting region 11102 is formed.
S14, a transparent conductive layer 112 is formed on a surface of the light-emitting step 11101 away from the substrate 12.
As shown in fig. 5, indium Tin Oxide (ITO) may be deposited on a surface of a side of the light emitting step 11101 remote from the substrate 12 by a magnetron sputtering method to obtain the transparent conductive layer 112.
In other embodiments, transparent conductive layer 112 may also be deposited from a material such as Fluorine Tin Oxide (FTO) or Aluminum Zinc Oxide (AZO).
S15, an electrode layer 113 is formed on the surface of the transparent conductive layer 112 on the side away from the light-emitting step 11101.
As shown in fig. 5, in some embodiments, a titanium/aluminum/titanium/gold (Ti/Al/Ti/Au) metal layer may be sequentially deposited on a surface of the transparent conductive layer 112, which is remote from the light emitting step 11101, by an ion beam evaporation method to form the electrode layer 113.
In other embodiments, the electrode layer 113 may also be made of nickel/iron/platinum/palladium (Ni/Fe/Pt/Pd) metal, or other conductive materials.
S16, a passivation layer 114 is formed on the side of the epitaxial layer 111 away from the substrate 12, and the passivation layer 114 is made to cover the electrode layer 113.
Referring again to fig. 6, in some embodiments, a passivation layer 114 may be deposited on a surface of the epitaxial layer 111 on a side remote from the substrate 12 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Wherein the passivation layer 114 may be made of SiO 2 、Si 3 N 4 Or Al2O3, etc. In an embodiment, the passivation layer 114 may cover the surface of the electrode layer 113 at the same time.
In other embodiments, the passivation layer 114 may also be made of an organic material such as polyvinyl chloride, epoxy, acrylic, polyamide, polyvinyl alcohol, natural rubber, or polystyrene.
In the embodiment, the passivation layer 114 can provide a protection function for other structural members in the pixel unit 1101, so as to prevent impurity atoms from being adsorbed on the surface of the structures such as the light-emitting step 11101 and the electrode layer 113 to cause pollution, and ensure the light-emitting effect of the pixel unit 1101. At the same time, short-circuit protection of the pixel unit 1101 can also be achieved.
S17, a groove 1141 is formed in the passivation layer 114 to expose at least a portion of a surface of the electrode layer 113 away from the transparent conductive layer 112.
Illustratively, the passivation layer 114 may be provided with a trench 1141 by a photolithography process, and the trench 1141 is opposite to the electrode layer 113. It is understood that the slot 1141 is a through slot structure, and can communicate with the external environment and the electrode layer 113. Accordingly, at least a portion of the surface of the electrode layer 113 away from the transparent conductive layer 112 may be exposed through the slot 1141 on the passivation layer 114.
In some embodiments, a portion of the surface of the electrode layer 113 on a side remote from the transparent conductive layer 112 may be exposed through the slot 1141 on the passivation layer 114.
S18, a pad layer 115 is formed on a side of the electrode layer 113 away from the transparent conductive layer 112.
Referring to fig. 7 again, a pad layer 115 may be deposited on the electrode layer 113 at a position corresponding to the slot 1141 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and the surface of the side of the pad layer 115 away from the substrate 12, opposite to the passivation layer 114, may be protruded, so as to facilitate soldering the end of the pad layer 115 away from the substrate 12. In some embodiments, the pad layer 115 may be made of a metal material such as gold, titanium, nickel, aluminum, copper, indium, tin, or silver-tin alloy.
Thus, a plurality of pixel units 1101 distributed in an array can be formed on the side of the U-GaN layer 13 away from the substrate 12, and the pixel array initial architecture 10 is obtained.
S20, the pixel array initial framework 10 is connected with the driving plate 20 in a bonding way.
As shown in fig. 8, specifically, the pad layer 115 of each pixel unit 1101 in the pixel array initial architecture 10 may be bonded to a pad at a corresponding position on the driving board 20, so as to implement electrical connection between the pixel array 11 and the driving board 20. During operation of the display device, the operation of each pixel cell 1101 in the pixel array 11 may be controlled by the drive board 20.
S30, a photoresist matrix 40 is formed on the light-emitting side 101 of the pixel array initial structure 10, such that the first hollow area 42 in the photoresist matrix 40 covers the light-emitting area 11102 of the pixel array initial structure 10.
As shown in fig. 5 and 8, in the pixel array 11, the light generated by the light-emitting step 11101 may exit from a side facing away from the driving plate 20. Accordingly, the side of the pixel array 11 away from the driving board 20 may be the light emitting side 101. The light-emitting side 101 of the pixel array initial architecture 10 may refer to the light-emitting side 101 of the pixel array 11. It is understood that, in the pixel array 11, each light emitting step 11101 may form a light emitting region 11102 correspondingly. The light-emitting region 11102 of the pixel array initial architecture 10 may refer to the light-emitting region 11102 of the pixel array 11.
Referring again to fig. 9, in some embodiments, step S30 may specifically include:
s31, stripping the substrate 12 to expose the U-GaN layer 13.
Referring again to fig. 10, in some embodiments, the substrate 12 may be stripped by a laser stripping technique to expose the U-GaN layer 13.
S32, etching the U-GaN layer 13 to obtain a U-GaN matrix 30, and enabling the U-GaN matrix 30 to cover the light emergent region 11102.
Referring again to fig. 11, in some embodiments, the U-GaN layer 13 may be etched by a photolithography process to obtain the U-GaN matrix 30. The U-GaN matrix 30 may include a plurality of U-GaN steps 31 distributed in an array, and a plurality of second hollow areas 32 distributed in an array. The U-GaN steps 31 may be staggered with the second hollow region 32.
In an embodiment, the plurality of U-GaN steps 31 distributed in an array may be opposite to the plurality of light emitting steps 11101 distributed in an array in the pixel array 11, i.e. the plurality of U-GaN steps 31 are correspondingly covered on the plurality of light emitting regions 11102.
S33, manufacturing a photoresist step 41 in the second hollow area 32 of the U-GaN matrix 30.
Referring to fig. 12 and fig. 13 together, first, a photoresist 401 may be coated on a side of the U-GaN matrix 30 away from the pixel array 11, and the second hollow area 32 may be filled with the photoresist 401. Wherein the photoresist material 401 fills the second hollow region 32. In some embodiments, the photoresist 401 may be selected from black glue.
In other embodiments, the photoresist 401 may be a light extinction material capable of absorbing light, such as gray glue.
Subsequently, the photoresist material 401 may be etched to expose the U-GaN steps 31 while forming a plurality of photoresist steps 41 distributed in an array. In some embodiments, the photoresist 401 may be etched by a dry etching process until the U-GaN step 31 is exposed. It is understood that the photoresist steps 41 distributed in an array may be filled in the second hollow areas 32 in a one-to-one correspondence.
In the embodiment, the photoresist matrix 40 is prepared by the above process, so that on one hand, the processing precision requirement during coating of the photoresist material 401 can be reduced, and the processing difficulty can be reduced. On the other hand, uniformity of the surface of the photoresist 401 on the side away from the pixel array 11 can also be ensured.
In other embodiments, the photoresist 401 may be directly filled in each of the second hollow areas 32, and a side surface of the photoresist 401 away from the pixel array 11 is located on the same plane.
S34, stripping the U-GaN step 31 in the U-GaN matrix 30.
Referring again to fig. 14, in some embodiments, the U-GaN step 31 may be etched by a photolithography process to strip off the U-GaN step 31. Accordingly, a first hollow region 42 may be formed between the photoresist steps 41, and thus, the photoresist matrix 40 may be manufactured. In an embodiment, the projection of the first hollow area 42 on the driving plate 20 may coincide with the projection of the light emitting step 11101 on the driving plate 20.
It will be appreciated that the photoresist steps 41 in the photoresist matrix 40 absorb the incident light, so as to prevent light from exiting the non-light-emitting region (i.e. the region other than the light-emitting region 11102) to cause optical crosstalk.
S40, a light-transmitting film layer 50 is manufactured on one side of the photoresist matrix 40 away from the pixel array initial structure 10, so that the refractive index of the light-transmitting film layer 50 is smaller than that of the N-GaN layer 1111.
Referring to fig. 14 and 15 together, in some embodiments, a light-transmissive film layer 50 may be deposited on a side of the photoresist matrix 40 remote from the pixel array 11 by a magnetron sputtering method. In an embodiment, the light-transmitting film 50 can cover a side surface of the photoresist step 41 away from the pixel array 11, a circumferential sidewall of the photoresist step 41, and the first hollow region 42. It is understood that the light-transmitting film 50 is connected to the N-GaN layer 1111 at the position of the first hollow region 42. At the first hollow area 42, the light-transmitting film 50 can be assembled to form a groove structure 51 with one side open.
In an embodiment, the light-transmitting film layer 50 may be made of a transparent material having a refractive index smaller than that of the N-GaN layer 1111. In addition, the connection position of the light-transmitting film 50 and the N-GaN layer 1111 may be referred to as an interface 60. When the angle of incidence of a ray with respect to the interface 60 is greater than the critical angle for total reflection, the ray may undergo total reflection upon reaching the interface 60.
In some embodiments, the light transmissive film layer 50 may be made of Indium Tin Oxide (ITO). Among them, indium Tin Oxide (ITO) has a refractive index of 1.8-2.1, and N-GaN layer 1111 has a refractive index of 2.45-2.5, i.e., light-transmitting film layer 50 has a refractive index smaller than that of N-GaN layer 1111. Thus, when the angle of incidence of a ray of light with respect to the interface 60 is greater than the critical angle for total reflection, the ray of light may undergo total reflection upon reaching the interface 60. In addition, the light-transmitting film layer 50 may also be used as a current diffusion layer, and the light-transmitting film layer 50 may be electrically connected to the N-GaN layer 1111, so that the conductive effect of the N-electrode common to each of the light-emitting steps 11101 (i.e., the N-GaN layer 1111) may be improved, and further, the display effect such as the contrast ratio of the display device may be improved.
In other embodiments, the transparent film 50 may be made of materials such as Fluorine Tin Oxide (FTO) or Aluminum Zinc Oxide (AZO), so that the light beam can be totally reflected, and meanwhile, the light beam can be electrically connected with the N-GaN layer 1111, so as to improve the conductivity of the common N-pole. Wherein, the refractive indexes of the Fluorine Tin Oxide (FTO) and the Aluminum Zinc Oxide (AZO) are about 1.6-2.1.
In other embodiments, the light transmissive film layer 50 is not precluded from being made of a transparent insulating material such as polyvinyl chloride or polytetrafluoroethylene. Wherein the refractive index of the polyvinyl chloride is about 1.52-1.55, and the refractive index of the polytetrafluoroethylene is about 1.37-1.38.
Of course, in other embodiments, the light-transmitting film 50 may be a composite film, that is, it includes a current diffusion layer and a transparent insulating material layer that are stacked, and the current diffusion layer may be located between the insulating material layer and the photoresist matrix 40. The current diffusion layer may be made of Indium Tin Oxide (ITO), fluorine Tin Oxide (FTO), or Aluminum Zinc Oxide (AZO). The insulating material layer can be made of polyvinyl chloride or polytetrafluoroethylene and the like.
S50, a light adjusting layer 70 is formed on the side of the transparent film 50 far from the pixel array initial structure 10, such that the light adjusting layer 70 covers at least a portion of the light emergent region 11102.
As shown in fig. 17, in some embodiments, the light generated by each light-emitting step 11101 in the pixel array 11 during operation may have the same color. Illustratively, each light-emitting step 11101 in the pixel array 11 is operated to generate blue light. In an embodiment, the light generated by part of the light emitting steps 11101 may be converted by the light modulation layer 70.
In other embodiments, the light generated by each light-emitting step 11101 in the pixel array 11 during operation may also be Ultraviolet (UV).
Referring again to fig. 16, in some embodiments, step S50 may include:
s51, a heat conducting medium 73 is added to the quantum dot slurry to obtain a dimming material.
In some embodiments, two quantum dot slurries may be provided, a first quantum dot slurry and a second quantum dot slurry. The first quantum dot slurry may be red quantum dot slurry, and the second quantum dot slurry may be green quantum dot slurry. It can be understood that the quantum dot slurry can emit light rays with corresponding colors under the excitation action of the light rays, and the color conversion of the light rays can be realized. For example, when light is projected toward a red quantum dot, the red quantum dot may be excited to produce red light.
In an embodiment, the heat-conducting medium 73 may be added to the first quantum dot slurry, and the heat-conducting medium 73 may be uniformly mixed in the first quantum dot slurry to obtain the first dimming material 71. The second light modulation material 72 can be obtained by adding the heat conduction medium 73 to the second quantum dot slurry and uniformly mixing the heat conduction medium 73 in the second quantum dot slurry.
In the embodiment, in the first dimming material 71, the mass ratio of the heat conductive medium 73 may be set to 0.1% -0.5%. Illustratively, in the first dimming material 71, the mass ratio of the heat conductive medium 73 may be set to 0.1%, 0.15%, 0.22%, 0.25%, 0.28%, 0.3%, 0.32%, 0.36%, 0.43%, 0.47%, or 0.5%, etc. In the second dimming material 72, the mass ratio of the heat conductive medium 73 may also be set to 0.1% -0.5%. Illustratively, in the second dimming material 72, the mass ratio of the heat conductive medium 73 may be set to 0.1%, 0.15%, 0.22%, 0.25%, 0.28%, 0.3%, 0.32%, 0.36%, 0.43%, 0.47%, or 0.5%, etc.
In the embodiment, the heat conducting medium 73 is added into the quantum dot slurry, so that the overall heat conductivity of the dimming material can be improved, and the heat conduction efficiency can be improved. Therefore, the heat dissipation of the display device can be quickened, the temperature of the display device during operation is reduced, and further, the stability of the display device during operation can be improved, the display effect is improved, and the service life of the display device is prolonged.
Of course, in other embodiments, three or four quantum dot slurries with equal colors may be provided and mixed with the heat conducting medium 73 respectively to obtain the dimming material with corresponding colors and high heat conductivity coefficient.
In some embodiments, the thermally conductive medium 73 may be selected from Boron Nitride (BN) powder.
In other embodiments, the heat transfer medium 73 may also be selected from aluminum oxide (Al 2 O 3 ) Powder, aluminum nitride (AIN) powder, and the like.
In other embodiments, the dimming material mixed with the heat conducting medium 73 may be directly used. Accordingly, step S51 may be omitted in step S50.
S52, printing the light adjusting material on the preset position of the light transmitting film layer 50 far from the side of the photoresist matrix 40 to obtain the light adjusting layer 70.
Specifically, according to the full-color design requirement of the display device, the first dimming material 71 is printed in the groove structure 51 at the first preset position, and the second dimming material 72 is printed in the groove structure at the second preset position, so as to obtain the dimming layer 70. Accordingly, the display device can exhibit full color.
It is understood that the first preset position and the second preset position may not overlap. In addition, the part of the groove structure 51 can be directly passed by the light generated by the light emitting step 11101 without printing the dimming material.
Referring to fig. 18 again, in the embodiment, in the light generated by the light emitting step 11101, a portion of the light having an incident angle smaller than the critical angle of total reflection with respect to the interface 60 can pass through the light-transmitting film 50 and can be projected onto the light-adjusting material opposite to the light emitting step 11101 and the surrounding photoresist step 41. The light-resistant step 41 can absorb the received light, and the light-adjusting material can generate light with a corresponding color under the excitation of the light, so as to convert the color of the light generated by the light-emitting step 11101.
The angle of incidence of another portion of the light rays with respect to the interface 60 may be greater than or equal to the critical angle for total reflection, which may occur when the light rays reach the interface 60. Of the light rays that are totally reflected, a part of them can be transmitted all the way to the far end in the pixel array 11. Another portion of the light may pass through the passivation layer 114 in the pixel array 11, be refracted by the passivation layer 114, and then be projected toward the photoresist step 41, and be absorbed by the photoresist step 41.
Accordingly, light generated by the light emitting step 11101 is prevented from exciting the dimming material at other positions (not opposite to the light emitting step 11101) to emit light, and light is prevented from exiting from the other positions of the groove structure 51 not filled with the dimming material. Therefore, the optical crosstalk can be improved, the contrast ratio of the display device is improved, and the display effect of the display device is improved.
S60, a protection layer 80 is formed on a side of the light modulation layer 70 away from the pixel array initial structure 10.
As shown in fig. 18, a fusible Polytetrafluoroethylene (PFA) material may be coated on a side of the dimming layer 70 remote from the pixel array 11, and thermally cured to form a protective layer 80. In some embodiments, the protection layer 80 may cover both the light modulation material and the exposed light-transmitting film layer 50. Therefore, the protection layer 80 can provide packaging and protection functions for the light adjusting layer 70 and the light-transmitting film layer 50, so that the damage probability of the light adjusting layer 70 and the light-transmitting film layer 50 is reduced, and the service life of the display device is prolonged.
It is understood that the pixel array initial structure 10 described in step S40 to step S60 may refer to the pixel array initial structure 10, i.e. the pixel array 11, after the substrate 12 and the U-GaN layer 13 have been peeled off.
As shown in fig. 14 and 18, there is also provided a display device which can be manufactured by the display device manufacturing method provided in the embodiment. In some embodiments, the display device includes a pixel array 11, a photoresist matrix 40, and a light transmissive film layer 50.
As shown in fig. 4, 5, and 7, the pixel array 11 may include a plurality of pixel units 1101, and the structure of each pixel unit 1101 may be set to be the same. In some embodiments, pixel cell 1101 may include a light emitting step 11101, a transparent conductive layer 112, and an electrode layer 113, which are sequentially stacked. The light emitting step 11101 may be etched from the epitaxial layer 111. The epitaxial layer 111 may include an N-GaN layer 1111, a quantum well light emitting layer 1112, and a P-GaN layer 1113, which are sequentially stacked, and the P-GaN layer 1113 may be connected to the transparent conductive layer 112.
In an embodiment, the pixel unit 1101 further includes a passivation layer 114 and a pad layer 115. Wherein, the passivation layer 114 may cover the circumference of the light emitting step 11101, the circumference of the transparent conductive layer 112, and the edge of the electrode layer 113. The pad layer 115 may be connected to a portion of the electrode layer 113 exposed with respect to the passivation layer 114, and an end of the pad layer 115 remote from the electrode layer 113 may protrude with respect to the passivation layer 114.
Referring to fig. 10 again, in an embodiment, the display device may further include a driving board 20, and each pad layer 115 in the pixel array 11 may be bonded to the driving board 20.
As shown in fig. 8, the pixel array 11 may include a light emitting side 101, and the light emitting side 101 may be located at a side of the pixel array 11 away from the driving board 20. In addition, the pixel array 11 may further include a plurality of light emitting regions 11102 distributed in an array. It is understood that the light-emitting region 11102 may be located on the light-emitting side 101 of the pixel array 11, and the light-emitting regions 11102 may correspond to the light-emitting steps 11101 one by one.
Referring to fig. 14 again, the photoresist matrix 40 may be disposed on the light emitting side 101 of the pixel array 11. In an embodiment, the photoresist matrix 40 may include a plurality of photoresist steps 41 distributed in an array and a plurality of first hollow areas 42 distributed in an array, and the photoresist steps 41 and the first hollow areas 42 are staggered. The first hollow areas 42 cover the light emitting areas 11102, i.e., the plurality of first hollow areas 42 distributed in an array may be opposite to the plurality of light emitting areas 11102 distributed in an array one-to-one correspondence, and projections of the first hollow areas 42 and the light emitting areas 11102 on one side of the driving plate 20 overlap. The photoresist step 41 may be made of a photoresist material 401 capable of absorbing light, such as black glue or gray glue, to absorb the received light.
Referring to fig. 15 again, the light-transmitting film 50 may be disposed on a side of the photoresist matrix 40 away from the pixel array 11. Specifically, the light-transmitting film 50 can cover the photoresist steps 41 and the first hollow areas 42 of the photoresist matrix 40 at the same time. In addition, the light-transmitting film 50 can be enclosed into a groove structure 51 with an opening at one side in the first hollow area 42. It can be appreciated that the light-transmitting film 50 may be surrounded by a plurality of groove structures 51 distributed in an array, and the plurality of groove structures 51 distributed in an array may correspond to the plurality of light-emitting areas 11102 distributed in an array one by one, and the projection of the groove structures 51 on the side of the driving board 20 may be located in the projection of the light-emitting areas 11102 on the side of the driving board 20.
In some embodiments, the light-transmitting film layer 50 may be made of a transparent material having a refractive index smaller than that of the N-GaN layer 1111. Thus, when the angle of incidence of a ray of light with respect to the interface 60 is greater than the critical angle for total reflection, the ray of light may be totally reflected at the interface 60 location.
In some embodiments, the transparent film 50 may be made of Indium Tin Oxide (ITO), fluorine Tin Oxide (FTO), or Aluminum Zinc Oxide (AZO), among others. Accordingly, the light-transmitting film 50 may also be used as a current diffusion layer, and the light-transmitting film 50 may be electrically connected to the N-GaN layer 1111 in the pixel array 11, so as to improve the conductive effect of the N-electrode common to each of the light-emitting steps 11101 (i.e., the N-GaN layer 1111), and further improve the display effects such as the contrast ratio of the display device.
In other embodiments, the light transmissive film layer 50 is not precluded from being made of an insulating material such as polyvinyl chloride or polytetrafluoroethylene.
Of course, in other embodiments, the light-transmitting film 50 may be a composite film, that is, it includes a current diffusion layer and a transparent insulating material layer that are stacked, and the current diffusion layer may be located between the insulating material layer and the photoresist matrix 40. The current diffusion layer may be made of Indium Tin Oxide (ITO), fluorine Tin Oxide (FTO), or Aluminum Zinc Oxide (AZO). The insulating material layer can be made of polyvinyl chloride or polytetrafluoroethylene and the like.
Referring again to fig. 17, the display device further includes a dimming layer 70. The light modulation layer 70 may be disposed on a side of the light-transmitting film layer 50 away from the pixel array 11, and the light modulation layer 70 covers at least a portion of the light-emitting region 11102. In some embodiments, the dimming layer 70 may be disposed in a portion of the groove structure 51, i.e., another portion of the groove structure 51 may not need to be provided with the dimming layer 70.
The dimming layer 70 may be made of a dimming material. Wherein the dimming material may comprise a quantum dot paste and a heat conducting medium 73. In some embodiments, the quantum dot slurry may include a first quantum dot slurry and a second quantum dot slurry. The first quantum dot slurry may be red quantum dot slurry, and the second quantum dot slurry may be green quantum dot slurry.
The first quantum dot paste may be mixed with a heat conductive medium 73 to obtain a first light modulation material 71. The second quantum dot paste may be mixed with a heat transfer medium 73, and a second light modulation material 72 may be obtained. In an embodiment, the mass ratio of the heat conductive medium 73 in the first dimming material 71 may be set to 0.1% -0.5%. The mass ratio of the heat conductive medium 73 in the second dimming material 72 may be set to 0.1% -0.5%.
In an embodiment, the first dimming material 71 may be filled in the groove structure 51 at the first preset position, the second dimming material 72 may be filled in the groove structure 51 at the second preset position, and other groove structures 51 may be empty. That is, the dimming layer 70 may cover a portion of the light-emitting region 11102. In an embodiment, the first preset position and the second preset position do not overlap, and the first preset position and the second preset position can be designed according to the full-color requirement of the display device.
Referring again to fig. 18, in some embodiments, the display device further includes a protective layer 80, and the protective layer 80 may be located on a side of the dimming layer 70 away from the pixel array 11. The protection layer 80 may cover both the light modulation material and the exposed transparent film 50. Thus, the light modulation layer 70 and the light-transmitting film layer 50 can be encapsulated and protected by the protection layer 80.
In some embodiments, a surface of the protective layer 80 away from the pixel array 11 may be a plane, which may ensure flatness of a surface of the display device and improve appearance.
Also provided in embodiments is a display device that may include the display device provided in embodiments.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.

Claims (15)

1. A method of manufacturing a display device, comprising:
preparing an initial architecture of a pixel array;
after the pixel array initial framework is connected with a driving plate in a bonding way, a light-emitting side of the pixel array initial framework is manufactured into a light-emitting matrix, a first hollow area in the light-emitting matrix covers a light-emitting area of the pixel array initial framework, a light-emitting step in the light-emitting matrix covers a non-light-emitting area of the pixel array initial framework, and the light-emitting side is positioned at one side of the pixel array initial framework far away from the driving plate;
and manufacturing a light-transmitting film layer on one side of the photoresist matrix far away from the pixel array initial framework, wherein the light-transmitting film layer simultaneously covers the photoresist step and the first hollow area, so that the refractive index of the light-transmitting film layer is smaller than that of a structure connected with the light-transmitting film layer in the pixel array initial framework.
2. The method of claim 1, wherein the fabricating a photoresist matrix on the light-emitting side of the initial pixel array architecture such that a first hollow area in the photoresist matrix covers the light-emitting area of the initial pixel array architecture comprises:
stripping the substrate in the initial architecture of the pixel array to expose the U-GaN layer in the initial architecture of the pixel array;
etching the U-GaN layer to obtain a U-GaN matrix, and enabling the U-GaN matrix to cover the light emergent region;
manufacturing a photoresist step in a second hollowed-out area of the U-GaN matrix;
and stripping the U-GaN step in the U-GaN matrix.
3. The method of claim 2, wherein fabricating a photoresist step in the second hollowed-out region of the U-GaN matrix comprises:
coating a photoresist material on the U-GaN matrix, and filling the second hollowed-out area with the photoresist material;
the photoresist is etched to expose the U-GaN step.
4. The method of claim 1, wherein the fabricating a light-transmitting film on a side of the photoresist matrix away from the initial architecture of the pixel array, such that the refractive index of the light-transmitting film is smaller than that of a structure connected to the light-transmitting film in the initial architecture of the pixel array, comprises:
and at least manufacturing a current diffusion layer on one side of the photoresist matrix far from the initial framework of the pixel array.
5. The method of manufacturing a display device according to claim 1, wherein the method of manufacturing a display device further comprises:
and manufacturing a dimming layer on one side of the light-transmitting film layer far away from the initial framework of the pixel array, so that the dimming layer at least covers part of the light-emitting area.
6. The method of claim 5, wherein fabricating a dimming layer on a side of the light-transmissive film layer away from the initial architecture of the pixel array, such that the dimming layer covers at least a portion of the light-emitting region comprises:
printing a light modulation material on a preset position of one side of the light transmission film layer far away from the photoresistance matrix to manufacture the light modulation layer;
the dimming material comprises quantum dot slurry and a heat conducting medium, wherein the heat conducting medium is mixed in the quantum dot slurry.
7. The method of manufacturing a display device according to claim 6, wherein printing the light modulation material on the light transmission film layer at a predetermined position far from the side of the photoresist matrix to manufacture the light modulation layer comprises:
printing a first light modulation material on a first preset position of one side, far away from the photoresistance matrix, of the light transmission film layer, wherein the first light modulation material comprises first quantum dot slurry and heat conducting media, and the heat conducting media are mixed in the first quantum dot slurry;
and/or the number of the groups of groups,
printing a second light modulation material on a second preset position of one side, far away from the photoresistance matrix, of the light transmission film layer, wherein the second light modulation material comprises second quantum dot slurry and heat conducting media, and the heat conducting media are mixed in the second quantum dot slurry.
8. The method of manufacturing a display device according to any one of claims 5 to 7, further comprising:
and manufacturing a protective layer on one side of the dimming layer far away from the initial framework of the pixel array.
9. A display device, comprising:
the pixel array comprises a light emitting side, a light emitting area and a non-light emitting area;
the driving plate is connected to one side, far away from the light emitting side, of the pixel array in a bonding way;
the light-resistant matrix is arranged on the light-emitting side of the pixel array and comprises a first hollow area and a light-resistant step, wherein the first hollow area covers the light-emitting area, and the light-resistant step covers the non-light-emitting area; a kind of electronic device with high-pressure air-conditioning system
The light-transmitting film layer is arranged on one side, far away from the pixel array, of the photoresist matrix, and simultaneously covers the first hollow area and the photoresist step, and the refractive index of the light-transmitting film layer is smaller than that of a structure connected with the light-transmitting film layer in the pixel array 。
10. The display device according to claim 9, wherein the light-transmitting film layer includes at least a current diffusion layer.
11. The display device of claim 9, further comprising a dimming layer covering at least a portion of the light exit region.
12. The display device of claim 11, wherein the dimming layer comprises a quantum dot paste and a thermally conductive medium, the thermally conductive medium being mixed in the quantum dot paste.
13. The display device of claim 12, wherein the quantum dot slurry comprises a first quantum dot slurry and a second quantum dot slurry, each of the first quantum dot slurry and the second quantum dot slurry having the thermally conductive medium mixed therein;
the first quantum dot slurry and the second quantum dot slurry are covered on different light emergent areas.
14. A display device according to any one of claims 11 to 13, further comprising a protective layer on a side of the dimming layer remote from the pixel array.
15. A display device comprising a display device as claimed in any one of claims 9 to 14.
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