CN115458618A - Single-row carrier photodiode - Google Patents

Single-row carrier photodiode Download PDF

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Publication number
CN115458618A
CN115458618A CN202211193879.7A CN202211193879A CN115458618A CN 115458618 A CN115458618 A CN 115458618A CN 202211193879 A CN202211193879 A CN 202211193879A CN 115458618 A CN115458618 A CN 115458618A
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layer
type contact
collection
carrier photodiode
cliff
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刘凯
董晓雯
段晓峰
黄永清
王�琦
任晓敏
蔡世伟
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Beijing University of Posts and Telecommunications
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Beijing University of Posts and Telecommunications
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

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Abstract

The application relates to the technical field of semiconductor photoelectric devices and provides a single-row carrier photodiode. The device comprises a p-type contact layer, an electron blocking layer, an absorption layer, a spacing layer, a cliff layer, a collection layer, a sub-collection layer and an n-type contact layer which are sequentially connected; and a p-electrode on the p-type contact layer and an n-electrode on the n-type contact layer; wherein the thickness of the collection layer is 1300 nm to 1700 nm. The collecting layer with the thickness of 1300 nm to 1700 nm is selected, the p-type contact layer, the electron blocking layer, the absorbing layer, the spacing layer, the cliff layer, the collecting layer, the sub-collecting layer and the n-type contact layer are sequentially connected, and the p electrode and the n electrode are respectively arranged on the p-type contact layer and the n-type contact layer to form the single-row carrier photodiode, so that the parasitic capacitance in the single-row carrier photodiode is reduced, the total bandwidth of the single-row carrier photodiode is improved, and the working efficiency of the single-row carrier photodiode is improved.

Description

Single-row carrier photodiode
Technical Field
The application relates to the technical field of semiconductor photoelectric devices, in particular to a single-row carrier photodiode.
Background
Single-carrier photodiodes (UTC-PDs) are a popular choice in optical devices for microwave and millimeter wave communication systems due to their excellent performance in high speed and high power. The millimeter wave faces huge transmission loss in the long-distance transmission of the free space; therefore, the millimeter waves are generally transmitted by low-loss optical fibers using radio over fiber communication systems. In practical applications of RoF (radio-over-fiber) communication systems, a photodiode with a diameter of 14-25 μm is generally used, so that an optical access aperture is large, coupling with an optical fiber is facilitated, and coupling loss is reduced, but a parasitic capacitance is also large at this time, the parasitic capacitance at a diameter of 20 μm is generally about 100fF, and an increase in the parasitic capacitance will result in a reduction in the total bandwidth of the photodiode, so that the photodiode has low working efficiency.
Disclosure of Invention
The embodiment of the application provides a single-row carrier photodiode, which is used for solving the problem that the total bandwidth of the photodiode is reduced due to the increase of parasitic capacitance at present, so that the working efficiency of the photodiode is low.
The embodiment of the application provides a single-row carrier photodiode, which comprises a p-type contact layer, an electron blocking layer, an absorption layer, a spacing layer, a cliff layer, a collection layer, a sub-collection layer and an n-type contact layer which are sequentially connected; and a p-electrode on the p-type contact layer and an n-electrode on the n-type contact layer;
wherein the thickness of the collection layer is 1300 nm to 1700 nm.
In one embodiment, the collection layer has a thickness of 1500 nanometers.
In one embodiment, the material of the collection layer comprises InP.
In one embodiment, the doping concentration of InP in the collecting layer is increased from 3 × 10 on the side close to the cliff layer 15 cm -3 Graded to 1 × 10 near one side of the n-type contact layer 15 cm -3 。
In one embodiment, the material of the cliff layer comprises InP.
In one embodiment, the doping concentration of InP in the cliff layer is 4 x 10 17 cm -3 To 6X 10 17 cm -3 。
In one embodiment, the cliff layer has a thickness of 50 nanometers to 70 nanometers.
In one embodiment, the cliff layer has a thickness of 70 nanometers.
In one embodiment, the sub-collection layers include at least a first sub-collection layer and a second sub-collection layer, and the first sub-collection layer and the second sub-collection layer are structural layers with different doping concentrations of InP.
In one embodiment, the material of the spacer layer includes InGaAsP and InP.
According to the single-row carrier photodiode provided by the embodiment of the application, the p-type contact layer, the electron blocking layer, the absorption layer, the spacing layer, the cliff layer, the collection layer, the sub-collection layer and the n-type contact layer are sequentially connected by selecting the collection layer with the thickness of 1300 nm to 1700 nm, and the p electrode and the n electrode are respectively arranged on the p-type contact layer and the n-type contact layer to form the single-row carrier photodiode.
Drawings
In order to more clearly illustrate the technical solutions in the present application or prior art, the drawings used in the embodiments or the description of the prior art are briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a single-row carrier photodiode provided in an embodiment of the present application;
FIG. 2 is a diagram illustrating test results of a single-row carrier photodiode according to an embodiment of the present disclosure;
FIG. 3 is a second schematic diagram illustrating the test results of a single-row-carrier photodiode according to an embodiment of the present application;
fig. 4 is a third schematic diagram illustrating test results of a single-carrier photodiode provided in an embodiment of the present application.
Reference numerals:
1. a p-electrode; 2. a p-type contact layer; 3. an electron blocking layer; 4. an absorption layer; 5. a spacer layer; 6. a cliff layer; 7. a collection layer; 8. a first sub-collection layer; 9. a second sub-collection layer; 10. an n electrode; 11. an n-type contact layer.
Detailed Description
Embodiments of the present application will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the present application but are not intended to limit the scope of the present application.
In the description of the embodiments of the present application, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, and are only for convenience of description of the embodiments of the present application and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should be noted that the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.
In the embodiments of the present application, unless otherwise explicitly specified or limited, a first feature "on" or "under" a second feature may be directly contacted with the first and second features, or indirectly contacted with the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description of the present application, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like is intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
In the course of the inventive application, the applicant considers the following aspects:
in practical applications of RoF communication systems, a single-row carrier photodiode with a diameter of 14 μm to 25 μm and a collection layer thickness of 500nm is typically used to make the entrance aperture larger for coupling with the optical fiber and to reduce coupling loss, but the parasitic capacitance is also larger, typically about 100fF at 20 μm diameter.
In view of the above, the applicant has devised various embodiments of the present application.
The single-row carrier photodiode provided by the present invention is described in detail below with reference to embodiments.
Fig. 1 is a schematic structural diagram of a single-row carrier photodiode according to an embodiment of the present disclosure. Referring to fig. 1, an embodiment of the present application provides a single-row carrier photodiode, which may include: a p-type contact layer, an electron blocking layer, an absorption layer, a spacer layer, a cliff layer, a collection layer, a subcollector layer, an n-type contact layer, a p-electrode, and an n-electrode.
The p electrode may be a positive electrode, and the n electrode may be a negative electrode.
And, the sub-collection layers may include a first sub-collection layer and a second sub-collection layer.
The p-type contact layer, the electron blocking layer, the absorption layer, the spacing layer, the cliff layer, the collection layer, the sub-collection layer and the n-type contact layer are sequentially connected.
Wherein the first sub-collector layer and the second sub-collector layer in the collector layer are sequentially connected.
I.e., the electron blocking layer is connected to the p-type contact layer, the electron blocking layer is connected to the absorber layer, the spacer layer is connected to the absorber layer, the cliff layer is connected to the spacer layer, the collector layer is connected to the cliff layer, the first subcollector layer is connected to the collector layer, the second subcollector layer is connected to the first subcollector layer, and the n-type contact layer is connected to the second subcollector layer.
Furthermore, metal electrodes are plated on two sides above the n-type contact layer, so that ohmic contact is formed and the n-type contact layer is connected with the n-type electrode.
And metal electrodes are plated on two sides above the p-type contact layer, so that ohmic contact is formed and the p-type contact layer is connected with the p-electrode.
Further, the thickness of the collection layer in this embodiment may be 1300 nm to 1700 nm, for example, 1300 nm, 1400 nm, 1500nm, 1600 nm, 1700 nm, and the like.
Further, the thickness of the collection layer in this embodiment may preferably be 1500nm, but is not particularly limited, and other thicknesses may be adopted in other cases to achieve the best effect.
The material of the collection layer in this embodiment may comprise InP. Wherein InP is indium phosphide.
And the doping concentration of InP in the collecting layer can be increased from 3 × 10 near the cliff layer 15 cm -3 Gradually changed to 1 × 10 near one side of the n-type contact layer 15 cm -3 . The electric field at the front end of the collecting layer is pre-enhanced, so that electrons at the front end of the collecting layer are not accumulated under the high-light-intensity incidence, and the electric field is still high.
Further, the material of the cliff layer in this embodiment may include InP.
Wherein the doping concentration of InP in the cliff layer is 4 × 10 17 cm -3 To 6X 10 17 cm -3 . For example, it may be 4 × 10 17 cm -3 、5×10 17 cm -3 、6×10 17 cm -3 And so on.
It should be noted that when the doping concentration is from 1 × 10 18 cm -3 Down to 5X 10 17 cm -3 When the optimal bias voltage for the device to work is reduced to 5V from 9V, the highest value of the electric field of the cliff layer is obviously reduced and is reduced to 500kV/cm from 880kV/cm, the power consumption is reduced, the high-speed performance of the device is improved, and if the doping concentration of the cliff layer is further reduced, the heterojunction barrier at the conduction band of the cliff layer is increased, so that the high-speed performance is reduced. Therefore, the doping concentration of InP in the cliff layer is preferably 5 × 10 17 cm -3 。
The cliff layer is provided with a high electric field, so that a heterojunction barrier of InGaAs and InP can be relieved, and electrons can conveniently transit to the collecting layer. InGaAs is indium gallium arsenide.
Further, the thickness of the cliff layer is 50 nanometers to 70 nanometers. For example, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, etc.
The thickness of the cliff layer in this embodiment may preferably be 70 nm, but is not particularly limited, and other thicknesses may be used in other cases to achieve the best effect.
It should be further noted that in this embodiment, the first sub-collection layer and the second sub-collection layer are structural layers with different InP doping concentrations. Wherein, the doping concentration of InP in the first sub-collection layer may be gradually changed from low to high, and specifically may be from 1 × 10 15 cm -3 Taper to 1 × 10 18 cm -3 . The doping concentration of InP in the second sub-collection layer is higher due to the connection with the n-type contact layer, and can be 1 × 10 18 cm -3 。
The p-type contact layer in this embodiment may be InGaAs, and the doping concentration thereof may be 2 × 10 19 cm -3 ～3×10 19 cm -3 And thus may form ohmic contact with the metal electrode thereon.
The material of the electron blocking layer can be InGaAsP, and the doping concentration can be 1 x 10 19 cm -3 Electrons can be blocked from diffusing to the anode above the p-type contact layer. Wherein, the InGaAsP is the gallium indium arsenide phosphide.
The absorption layer may be InGaAs, which is a layer for generating photo-generated electrons and holes by light absorption, and has a doping concentration of 5 × 10 18 cm -3 Linear taper to 3 × 10 17 cm -3 (ii) a And a certain built-in electric field is provided, which is beneficial to the diffusion of electrons.
The material of the spacer layer may include InGaAsP and InP, and the material may be graded from an InGaAsP composition to InP. Specifically, the InGaAsP near the absorption layer may be graded into InP near the cliff layer.
It can be understood that, in the single-row carrier photodiode structure of this embodiment, when the single-row carrier photodiode operates under a bias voltage of 5V, the electric field in the collection layer is controlled to be 10kV/cm to 20kV/cm by adjusting the incident light intensity, so that electrons transit at the collection layer at peak speeds under different electric fields, thereby increasing the transit time bandwidth and further increasing the total bandwidth of the single-row carrier photodiode.
Further, in the single-row carrier photodiode structure, operating at 5V bias, in the absence of light injection, the electric field distribution of the collection layer is: from the side near the cliff layer to the n-type contact layerThe side gradually decreases, the electric field distribution of the collecting layer gradually becomes uniform along with the increase of the incident light intensity, and the incident light intensity is more than 4 multiplied by 10 4 W/cm 2 In time, the electric field distribution of the collection layer is inversely tilted.
Furthermore, in the single-row carrier photodiode structure, when the structure is operated under a bias voltage of 5V, the electric field of the collection layer changes along with the increase of the incident light intensity, the average drift velocity of electrons gradually increases, the capacitance gradually decreases, and the light intensity is 6 multiplied by 10 4 W/cm 2 The average velocity of the electron transit at the collection layer is maximized (about 3.5 x 10) 7 cm/s) at which time the capacitance drops to a minimum of 10.5fF.
Further, in the single-row carrier photodiode structure, the high speed performance is best when operating at 5V bias: the incident light intensity is 6 multiplied by 10 4 W/cm 2 The bandwidth reaches 106GHz; when the working bias voltage is reduced, the highest bandwidth is reduced, the high-speed performance is reduced under high light intensity, and the saturation performance is poorer; as the operating bias increases, the maximum bandwidth decreases and high speed performance decreases at low light intensities.
The single-row carrier photodiode in this embodiment may further include an active region, and the active region may have a diameter of 20 μm. By selecting a collection layer made of InP material with the wavelength of 1500nm, parasitic capacitance caused by larger diameter of an active region is greatly reduced.
According to the single-row carrier photodiode provided by the embodiment of the application, the p-type contact layer, the electron blocking layer, the absorption layer, the spacing layer, the cliff layer, the collection layer, the sub-collection layer and the n-type contact layer are sequentially connected by selecting the collection layer with the thickness of 1300 nm to 1700 nm, and the p electrode and the n electrode are respectively arranged on the p-type contact layer and the n-type contact layer to form the single-row carrier photodiode.
The application provides a novel light intensity-controlled electron transport and capacitance single-row carrier photodiode serving as a detector for UTC-PD (ultra-high performance-power detector), which is provided with a long collection layer and is used for obtaining excellent high-speed response and high saturation characteristics in a RoF (radio over fiber) communication system, and meanwhile, the coupling loss with optical fibers is greatly reduced. The high capacitance of the 20-micron-diameter photodiode detector can be compensated, and the response bandwidth is improved; the high-speed performance is further optimized by regulating and controlling electron transmission and capacitance based on incident light intensity, doping concentration of the cliff layer is improved to enable electric field distribution to be more uniform, power consumption is lower, doping concentration of the collection layer is optimized, charge compensation is brought, and response bandwidth and saturation performance are greatly improved.
Fig. 2 is one of the schematic diagrams showing the test results of the single-carrier photodiode according to the embodiment of the present application, as shown in fig. 2, fig. 2 is a schematic diagram showing the single-carrier photodiode when the incident light intensity increases from 0 to 6 × 10 4 W/cm 2 And collecting the change graph of the electric field distribution of the layer.
Specifically, in the single-row carrier photodiode, the incident light intensities in the arrow directions are 0, 2 × 10, respectively 4 W/cm 2 、4×10 4 W/cm 2 、6×10 4 W/cm 2 When the incident light intensity is gradually increased, the front end electric field intensity of the collection layer is gradually reduced, and the rear end electric field intensity of the collection layer is gradually increased.
Specifically, in the single-row carrier photodiode, the electric field intensity at the beginning of the collector layer was 40kV/cm in the absence of light incidence, and the electric field intensity at the end of the collector layer was 3X 10 15 cm -3 ～1×10 15 cm -3 The graded doping enhances the electric field in front of the collection layer in advance.
Specifically, in the single-row carrier photodiode, when the incident light intensity is 6 × 10 4 W/cm 2 And meanwhile, the electric field intensity at the front end of the collection layer is higher than 10kV/cm, and at the moment, the front end of the collection layer does not have electron accumulation which influences the high-speed performance of the photoelectric detector.
In one embodiment, the doping concentration of the cliff layer in the direction of the arrow is 1 × 10 for a single-row carrier photodiode 18 cm -3 Down to 5X 10 17 cm -3 And (3) time, the electric field distribution of the collecting layer changes: the electric field intensity at the tail end of the collecting layer is increased, and the electric field distribution of the collecting layer becomes uniform.
Specifically, for the single-row carrier photodiode, the doping concentration of the cliff layer is 1 × 10 18 cm -3 Down to 5X 10 17 cm -3 The electric field intensity at the end of the collecting layer is increased from about 0kV/cm to 12kV/cm.
FIG. 3 is a second schematic diagram showing the test results of the single-row-carrier photodiode according to the embodiment of the present application, as shown in FIG. 3, where FIG. 3 shows that the incident light intensity increases from 0 to 6 × 10 for the single-row-carrier photodiode 4 W/cm 2 The electron velocity distribution in the collection region changes.
Specifically, for a single-row carrier photodiode, the incident light intensities in the arrow directions are 0, 2 × 10, respectively 4 W/cm 2 、4×10 4 W/cm 2 、6×10 4 W/cm 2 In time, the speed of the electron at the front end of the collecting region gradually rises.
Specifically, for a single-carrier photodiode, the incident light intensity is increased from 0 to 6 × 10 4 W/cm 2 The electron velocity of the collection layer as a whole gradually increases.
Fig. 4 is a third schematic diagram illustrating test results of a single-row carrier photodiode according to an embodiment of the present disclosure, as shown in fig. 4, for the single-row carrier photodiode, when operating voltages of 4V, 5V, and 6V are applied, the bandwidth increases and then decreases with an increase in incident light intensity.
Specifically, the photoelectric detector working under 4V voltage has the advantages that as the incident light intensity increases, electron accumulation is generated inside the photoelectric detector, and the bandwidth is reduced rapidly; the photoelectric detector working at 5V voltage has bandwidth of 6 multiplied by 10 at incident light intensity along with the increase of the incident light intensity 4 W/cm 2 It reaches a maximum of 106GHz and then decreases; the bandwidth of the photoelectric detector working under the voltage of 6V is lower than that of the photoelectric detector working under the voltage of 5V and the same incident light intensity, and the maximum light intensity is only 92GHz.
Wherein, in fig. 2-4, the abscissa is Distance, i.e. thickness, and the unit is μm, i.e. micrometer; the abscissa is the Electric Field, in units of V/cm, i.e. volts per centimeter.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present application.

Claims (10)

1. The single-row carrier photodiode is characterized by comprising a p-type contact layer, an electron blocking layer, an absorption layer, a spacer layer, a cliff layer, a collection layer, a sub-collection layer and an n-type contact layer which are sequentially connected; and a p-electrode on the p-type contact layer and an n-electrode on the n-type contact layer;
wherein the thickness of the collection layer is 1300 nm to 1700 nm.
2. The single row carrier photodiode of claim 1, wherein the collection layer has a thickness of 1500 nanometers.
3. The single-row carrier photodiode of claim 1, wherein the material of the collection layer comprises InP.
4. The single file carrier photodiode of claim 3, wherein the dopant concentration of InP in the collection layer is from 3 x 10 on a side adjacent to the cliff layer 15 cm -3 Graded to 1 × 10 near one side of the n-type contact layer 15 cm -3 。
5. The single row carrier photodiode of claim 1, wherein the material of the cliff layer comprises InP.
6. The single file carrier photodiode of claim 5, wherein the dopant concentration of InP in the cliff layer is 4 x 10 17 cm -3 To 6X 10 17 cm -3 。
7. The single file carrier photodiode of claim 1, wherein the cliff layer has a thickness of 50 nanometers to 70 nanometers.
8. The single row carrier photodiode of claim 7, wherein the cliff layer has a thickness of 70 nanometers.
9. The single-file carrier photodiode of claim 1, wherein the sub-collection layers comprise at least a first sub-collection layer and a second sub-collection layer, the first sub-collection layer and the second sub-collection layer being structural layers of different dopant concentrations of InP.
10. The single carrier photodiode of claim 1, wherein the material of the spacer layer comprises InGaAsP and InP.
CN202211193879.7A 2022-09-28 2022-09-28 Single-row carrier photodiode Pending CN115458618A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117913161A (en) * 2024-03-20 2024-04-19 度亘核芯光电技术(苏州)有限公司 Cliff layer regulation and control high-speed single-row carrier photoelectric detector
CN117913160A (en) * 2024-03-20 2024-04-19 度亘核芯光电技术(苏州)有限公司 Double cliff layer regulation and control high-speed single-row carrier photoelectric detector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117913161A (en) * 2024-03-20 2024-04-19 度亘核芯光电技术(苏州)有限公司 Cliff layer regulation and control high-speed single-row carrier photoelectric detector
CN117913160A (en) * 2024-03-20 2024-04-19 度亘核芯光电技术(苏州)有限公司 Double cliff layer regulation and control high-speed single-row carrier photoelectric detector
CN117913161B (en) * 2024-03-20 2024-05-31 度亘核芯光电技术(苏州)有限公司 Cliff layer regulation and control high-speed single-row carrier photoelectric detector
CN117913160B (en) * 2024-03-20 2024-05-31 度亘核芯光电技术(苏州)有限公司 Double cliff layer regulation and control high-speed single-row carrier photoelectric detector

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