CN115449347A - Diamond grinding fluid for thinning SIC wafer and preparation method thereof - Google Patents
Diamond grinding fluid for thinning SIC wafer and preparation method thereof Download PDFInfo
- Publication number
- CN115449347A CN115449347A CN202211180518.9A CN202211180518A CN115449347A CN 115449347 A CN115449347 A CN 115449347A CN 202211180518 A CN202211180518 A CN 202211180518A CN 115449347 A CN115449347 A CN 115449347A
- Authority
- CN
- China
- Prior art keywords
- grinding fluid
- parts
- diamond grinding
- diamond
- sic wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 41
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 34
- 239000010432 diamond Substances 0.000 title claims abstract description 34
- 239000012530 fluid Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000002888 zwitterionic surfactant Substances 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 8
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 239000003381 stabilizer Substances 0.000 claims abstract description 8
- 239000000725 suspension Substances 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 21
- 238000003756 stirring Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical group C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims description 3
- 229960003237 betaine Drugs 0.000 claims description 3
- 229920003063 hydroxymethyl cellulose Polymers 0.000 claims description 3
- 229940031574 hydroxymethyl cellulose Drugs 0.000 claims description 3
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 3
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical group [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical group CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 2
- 150000007530 organic bases Chemical group 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 4
- 239000003921 oil Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a diamond grinding fluid for thinning a pre-SIC wafer and a preparation method thereof, wherein the diamond grinding fluid comprises the following components: according to parts by mass, 0.01-5 parts of diamond powder, 0.01-2 parts of silane coupling agent, 0.005-1 part of zwitterionic surfactant, 0.005-1 part of dispersing agent, 0.01-3 parts of pH regulator, 0.005-1 part of suspension stabilizer, 0.01-1 part of absolute ethyl alcohol, 50-100 parts of oil and 50-100 parts of deionized water. According to the water-in-oil type diamond grinding fluid prepared by the invention, the problem that a wafer is damaged due to overlarge friction force in the grinding process can be solved through the outer layer of oil, the grinding efficiency is accelerated, and on the other hand, the grinding fluid has better stability and the temperature in the grinding process is reduced through dissolving the deionized water, the dispersing agent, the suspension stabilizing agent and the diamond powder.
Description
Technical Field
The invention relates to the technical field of diamond grinding fluid for SIC wafer thinning, and particularly relates to diamond grinding fluid for SIC wafer thinning and a preparation method thereof.
Background
SiC wafers are the basic raw material for producing ICs. The production of silicon wafers is typically based on pure photovoltaic materials with a purity of 99.999%, which are produced into silicon rods, which are subjected to the processes of photoengraving, grinding, polishing, slicing, etc., to melt the polysilicon, draw the silicon rods out of the silicon single crystals, and then cut into thin silicon wafers. Based on silicon wafer, various circuit elements can be manufactured, and integrated circuit chip products with special electrical functions can be manufactured. The SiC wafer processing mainly comprises cutting, outer diameter rounding, slicing, chamfering, grinding, corrosion cleaning, etching, polishing and the like.
In the grinding step, the technical problems of low polishing efficiency, easy precipitation, large scratches and the like of the grinding liquid easily exist.
Disclosure of Invention
The invention aims to provide a diamond grinding fluid for thinning a SIC wafer and a preparation method thereof, and aims to solve the technical problems that the grinding fluid is low in polishing efficiency, easy to precipitate, large in scratches and the like easily existing in the grinding link of S.
The invention is realized by the following technical scheme:
a diamond grinding liquid for thinning SIC wafers comprises: based on the mass part, the weight of the material,
0.01-5 parts of diamond powder
0.01-2 parts of silane coupling agent
0.005-1 part of zwitterionic surfactant
0.005-1 part of dispersant
0.01-3 parts of pH regulator
0.005-1 part of suspension stabilizer
0.01-1 part of absolute ethyl alcohol
50-100 parts of oil
50-100 parts of deionized water.
Further, the diamond powder is 3.5um powder.
Further, the silane coupling agent is vinyl trimethoxy silane.
Further, the zwitterionic surfactant is betaine type zwitterionic surfactant.
Further, the dispersant is sodium polyacrylate.
Further, the pH regulator is organic alkali.
Further, hydroxymethyl cellulose is selected as the suspension stabilizer.
A preparation method of diamond grinding fluid for thinning SIC wafers comprises the following steps:
s1, adding diamond powder and a silane coupling agent into absolute ethyl alcohol, and performing ultrasonic dispersion and stirring to obtain a solution a;
s2, adding a dispersing agent and a suspension stabilizer into deionized water, and heating and uniformly stirring to obtain a solution b;
s3, slowly adding the solution a into the solution b, performing ultrasonic dispersion, heating and stirring to obtain a uniform solution c;
and S4, adding the zwitterionic surfactant into the solution c, then slowly adding the zwitterionic surfactant into oil, and ultrasonically dispersing and stirring to obtain the water-in-oil type diamond grinding fluid.
The technical scheme of the embodiment of the invention at least has the following advantages and beneficial effects:
(1) According to the water-in-oil type diamond grinding fluid prepared by the invention, the problem that the wafer is damaged due to overlarge friction force in the grinding process can be solved through the outer layer of oil, and the grinding efficiency is accelerated.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
Example 1
A diamond grinding fluid for thinning SIC wafers and a preparation method thereof comprise: based on the mass part, the weight of the material,
0.01 portion of diamond powder
Silane coupling agent 0.01 part
0.005 part of betaine type zwitterionic surfactant
0.005 part of sodium polyacrylate
0.01 part of organic base
0.005 part of hydroxymethyl cellulose
0.01 part of absolute ethyl alcohol
50 portions of oil
50 parts of deionized water.
Comparative example 1
Commercially available oil-based diamond abrasive (developed by Gaifu corporation) was selected.
Comparative example 2
A commercially available water-based diamond grinding fluid (developed by Gaifu corporation) was selected.
Under the condition of using the same experimental polisher and having the same polishing pressure (30 kg), polishing rotating speed (70 rpm), grinding fluid flow rate (2 ml/min) and grinding time (10 min), the grinding rate of the invention is 2.4um/min (the grinding rate of comparative example 1 is 1.8um/min, the grinding rate of comparative example 2 is 1.4 um/min), no obvious scratch is generated, and the product qualification rate is high. Therefore, compared with comparative examples 1 and 2, the water-in-oil type diamond grinding fluid prepared by the invention has better polishing efficiency and lubricating effect.
The present invention has been described in terms of the preferred embodiment, and it is not intended to be limited to the embodiment. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. The utility model provides a SIC wafer attenuate uses diamond grinding fluid which characterized in that includes: based on the mass portion of the raw materials,
0.01-5 parts of diamond powder
0.01-2 parts of silane coupling agent
0.005-1 part of zwitterionic surfactant
0.005-1 part of dispersant
0.01-3 parts of pH regulator
0.005-1 part of suspension stabilizer
0.01-1 part of absolute ethyl alcohol
50-100 parts of oil
50-100 parts of deionized water.
2. The diamond grinding fluid for SIC wafer thinning according to claim 1, wherein the diamond powder is 3.5um powder.
3. The diamond grinding fluid for SIC wafer thinning according to claim 1, wherein the silane coupling agent is vinyltrimethoxysilane.
4. The diamond grinding fluid for thinning SIC wafers according to claim 1, wherein the zwitterionic surfactant is betaine zwitterionic surfactant.
5. The diamond grinding fluid for SIC wafer thinning according to claim 1, wherein the dispersant is sodium polyacrylate.
6. The diamond grinding fluid for SIC wafer thinning according to claim 1, wherein the pH regulator is an organic base.
7. The diamond grinding fluid for SIC wafer thinning according to claim 1, wherein the suspension stabilizer is hydroxymethyl cellulose.
8. The method for preparing the diamond grinding fluid for thinning the SIC wafer according to any one of claims 1 to 7, comprising the following steps:
s1, adding diamond powder and a silane coupling agent into absolute ethyl alcohol, and performing ultrasonic dispersion and stirring to obtain a solution a;
s2, adding a dispersing agent and a suspension stabilizer into deionized water, and heating and uniformly stirring to obtain a solution b;
s3, slowly adding the solution a into the solution b, performing ultrasonic dispersion, heating and stirring to obtain a uniform solution c;
and S4, adding the zwitterionic surfactant into the solution c, slowly adding the zwitterionic surfactant into oil, and ultrasonically dispersing and stirring to obtain the water-in-oil type diamond grinding fluid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211180518.9A CN115449347A (en) | 2022-09-27 | 2022-09-27 | Diamond grinding fluid for thinning SIC wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211180518.9A CN115449347A (en) | 2022-09-27 | 2022-09-27 | Diamond grinding fluid for thinning SIC wafer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115449347A true CN115449347A (en) | 2022-12-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211180518.9A Pending CN115449347A (en) | 2022-09-27 | 2022-09-27 | Diamond grinding fluid for thinning SIC wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115449347A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105647475A (en) * | 2015-12-31 | 2016-06-08 | 河南省联合磨料磨具有限公司 | Water-soluble and oil-soluble diamond grinding liquid and preparation method thereof |
-
2022
- 2022-09-27 CN CN202211180518.9A patent/CN115449347A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105647475A (en) * | 2015-12-31 | 2016-06-08 | 河南省联合磨料磨具有限公司 | Water-soluble and oil-soluble diamond grinding liquid and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 宋月清 等: "《人造金刚石工具手册》", vol. 1, 冶金工业出版社, pages: 375 - 378 * |
| 宋月清 等: "《表面活性剂应用手册》", vol. 2, 31 August 1995, 化学工业出版社, pages: 375 - 378 * |
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