CN115433898A - Method for effectively replacing Degas cavity of metal silicide process machine - Google Patents

Method for effectively replacing Degas cavity of metal silicide process machine Download PDF

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Publication number
CN115433898A
CN115433898A CN202211195337.3A CN202211195337A CN115433898A CN 115433898 A CN115433898 A CN 115433898A CN 202211195337 A CN202211195337 A CN 202211195337A CN 115433898 A CN115433898 A CN 115433898A
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China
Prior art keywords
wafer
cavity
siconi
machine
metal silicide
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CN202211195337.3A
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Chinese (zh)
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王开树
李佳钰
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Hua Hong Semiconductor Wuxi Co Ltd
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Hua Hong Semiconductor Wuxi Co Ltd
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Priority to CN202211195337.3A priority Critical patent/CN115433898A/en
Publication of CN115433898A publication Critical patent/CN115433898A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The application provides a method for effectively replacing a Degas cavity of a metal silicide process machine, which comprises the following steps: transferring the wafer to a metal silicide process machine; sending the wafer into a Siconi cavity of a machine table for surface pre-cleaning treatment to remove silicon oxide on the surface of the wafer; and removing water vapor and impurities on the surface of the wafer in a Siconi cavity of the machine. The step of enabling the wafer to be close to the spray head again to remove surface water vapor and impurities is added at the end of the operation process of the Siconi cavity of the machine, the step can replace the function of a Degas cavity, therefore, the floor area of the machine is saved, and the transfer link of the wafer on the machine is reduced.

Description

Method for effectively replacing Degas cavity of metal silicide process machine
Technical Field
The application relates to the technical field of semiconductors, in particular to a method for effectively replacing a Degas cavity of a metal silicide process machine.
Background
In a semiconductor manufacturing process, a PVD process chamber has extremely high requirements on vacuum pressure, and a Degas chamber is configured to remove water vapor.
Metal silicide processes have been widely used in advanced processes of 90nm and below. Currently, the metal silicide process is generally implemented by an Applied Endura machine of the american Applied materials company, which is configured with a Siconi chamber, a Degas chamber, a PVD NiPt chamber, a PVD TiN chamber, etc., as shown in fig. 1. During operation, the wafer is firstly subjected to surface pre-cleaning treatment in a Siconi cavity through a Siconi process, then surface water vapor and impurities are removed in a Degas cavity at 200 ℃, and a nickel platinum alloy (NiPt) film and a thin titanium nitride (TiN) film are sequentially deposited after cooling. After the operation, the wafer returns to the cassette.
In order to save the floor space of the machine and reduce the transportation of the wafer in the machine, a method is needed to effectively replace the Degas cavity of the metal silicide process machine.
Disclosure of Invention
In order to achieve the purposes of saving the floor area of a machine and reducing the transportation link of wafers on the machine, the application provides a method for effectively replacing a Degas cavity of a metal silicide process machine, which comprises the following steps:
firstly, transferring a wafer to a metal silicide process machine;
step two, sending the wafer into a Siconi cavity of a machine table for surface pre-cleaning treatment to remove silicon oxide on the surface of the wafer;
and step three, removing water vapor and impurities on the surface of the wafer in a Siconi cavity of the machine.
Preferably, after the second step is completed, the wafer is lifted to a position where the distance between the surface of the wafer and the spray head in the Siconi cavity is 1.0mm-1.5mm, and water vapor and impurities on the surface of the wafer are removed by utilizing heat generated by thermal radiation of the spray head.
Preferably, the temperature of the shower head is 175-180 ℃.
Preferably, the wafer is raised to this position by a liftable susceptor in the Siconi chamber.
Preferably, the surface pre-cleaning treatment comprises the steps of:
step S1, introducing a gas mixture NF into a Siconi cavity 3 And NH 3 ；
S2, generating an etching agent for surface pre-cleaning treatment in a Siconi cavity;
s3, generating decomposable etching byproducts on the surface of the wafer;
and S4, removing the etching by-products.
Preferably, after step S3 is completed, the wafer is lifted to a position where the distance between the surface of the wafer and the shower head in the Siconi chamber is 1.8mm to 2.1 mm.
Preferably, the temperature of the shower head is 175-180 ℃ when step S4 is performed.
Preferably, the etchant is NH 4 F and NH 4 F·HF。
Preferably, the etch by-product is (NH) 4 ) 2 SiF 6 。
Preferably, after removing the moisture and the impurities on the surface of the wafer, the method further comprises the following steps: cooling the wafer to reduce the temperature of the nickel-platinum alloy during deposition; transferring the wafer to a PVD NiPt cavity of a machine table, and depositing a nickel-platinum alloy at a preset position of the wafer; the wafer is transferred to a PVD TiN chamber of a machine station, and titanium nitride is deposited on the nickel-platinum alloy to prevent oxidation of the nickel-platinum alloy.
As described above, the method for effectively replacing the Degas cavity of the metal silicide process machine provided by the present application has the following beneficial effects: the step of enabling the wafer to be close to the spray header again to remove surface water vapor and impurities is added at the end of the operation process of the Siconi cavity of the machine, and the step can replace the function of a Degas cavity, so that the floor area of the machine is saved, and the transfer link of the wafer on the machine is reduced.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without inventive efforts.
FIG. 1 is a schematic diagram of an Applied Endura machine for performing a metal silicide process as used in the prior art;
FIG. 2 is a flow chart illustrating a method for effectively replacing a Degas cavity of a metal silicide processing tool according to the present disclosure;
fig. 3 is a schematic diagram illustrating an operation flow of a Siconi chamber of a metal silicide processing tool according to an embodiment of the present disclosure.
Detailed Description
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and various changes in detail without departing from the spirit of the invention.
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships, and are used merely to facilitate the description of the present application and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.
When the metal silicide process is implemented by using an Applied Endura machine of the American Applied materials company, the wafer is firstly subjected to surface pre-cleaning treatment in a Siconi cavity through the Siconi process, and the surface pre-cleaning treatment has the effects of removing silicon oxide on the surface and reducing contact resistance.
In the Siconi process, the gas mixture NF 3 And NH 3 The etchant is generated under the action of radio frequency Plasma (RF Plasma) at the top of the Siconi cavity, and then flows into the cavity through a spray header in the middle of the Siconi cavity to react with the primary oxide on the surface of the wafer to form solid ammonium fluosilicate. Then, the wafer is lifted by a lift Pin (lift Pin) to be close to the spray header, so that the solid ammonium fluosilicate impurities are decomposed into gas. And finally, transferring the wafer from the Siconi cavity to a degas cavity at the temperature of 200 ℃, and removing surface water vapor and impurities in the degas cavity.
Referring to fig. 2 and 3 in combination, fig. 2 is a flow chart illustrating a method for effectively replacing a Degas cavity of a metal silicide processing tool according to an embodiment of the present disclosure, and fig. 3 is a schematic diagram illustrating an operation flow of a Siconi cavity of a metal silicide processing tool according to an embodiment of the present disclosure.
In step 201, the wafer is transferred to a metal silicide processing tool.
A plurality of isolation components are formed on a substrate in a wafer, and a plurality of device structures are formed in different regions of the substrate divided by the isolation components.
In step 202, the wafer is transferred into a Siconi chamber of a tool for a surface pre-cleaning process to remove silicon oxide on the surface of the wafer.
The surface pre-cleaning treatment comprises the following steps:
step S1, introducing a gas mixture NF into a Siconi cavity 3 And NH 3 。
As shown in FIG. 3 (a), a wafer 15 is placed on a liftable susceptor 11 in a Siconi chamber 10, and a gas mixture NF is supplied 3 And NH 3 Into a remote plasma generating device 12 at the top of the Siconi chamber 10.
And S2, generating an etchant for surface pre-cleaning treatment in the Siconi cavity.
As shown in FIG. 3 (b), the remote plasma generating apparatus 12 discharges NF 3 And NH 3 Excited transformation into ammonium fluoride NH 4 F and ammonium difluoride NH 4 F · HF, the equation for the reaction is as follows:
NF 3 +NH 3 → NH 4 F+NH 4 F·HF (1)
generated etchant NH 4 F and NH 4 The F.HF remains in the Siconi chamber 10 above the showerhead 13.
And S3, generating decomposable etching byproducts on the surface of the wafer.
As shown in FIG. 3 (c), the etchant NH is sprayed through a shower head 13 4 F and NH 4 F.HF is introduced into the lower part of the Siconi chamber 10, NH 4 F and NH 4 F, HF reacts with the silicon oxide on the surface of the wafer 15 to perform low-temperature (about 30 ℃) etching, and decomposable solid hexafluoro-silicon-ammonia (NH) is generated 4 ) 2 SiF 6 Etch by-products, the equation for the reaction is as follows:
NH 4 F or NH 4 F·HF+SiO 2 → (NH 4 ) 2 SiF 6 (solid)+H 2 O (2)
the etch by-product is a silicate that will prevent further progress of the etch reaction.
And S4, removing the etching by-products.
As shown in fig. 3 (d), the remote plasma generating device 12 stops generating the etchant, and the susceptor 11 lifts the wafer 15 to a position close to the showerhead 13 for in-situ annealing to sublimate the solid etching by-products. In this position, the distance between the surface of the wafer 15 and the showerhead 13 is 1.8mm to 2.1mm, preferably 1.9mm.
During the in-situ annealing, the showerhead 13 is at a temperature of 175 ℃ to 180 ℃, preferably 180 ℃, and the generated heat is conducted to the surface of the wafer 15 by thermal radiation. Solid state etch by-product (NH) 4 ) 2 SiF 6 SiF decomposed into gas at high temperature 4 、NH 3 And HF, the equation for the reaction is as follows:
(NH 4 ) 2 SiF 6 (solid) → SiF 4 (g)+NH 3 (g)+HF(g) (3)
the gas-extracting device 16 extracts SiF in a gaseous state 4 、NH 3 And HF is discharged out of the Siconi chamber 10.
In step 203, the wafer surface is stripped of moisture and impurities in the Siconi chamber of the tool.
As shown in fig. 3 (e), the susceptor 11 continues to lift the wafer 15 further closer to the showerhead 13. At this time, the distance between the surface of the wafer 15 and the shower head 13 is 1.0mm to 1.5mm, preferably 1.2mm. The temperature of the shower head 13 is 175 to 180 c, preferably 180 c, and moisture and impurities on the surface of the wafer 15 are taken away by heat generated by the heat radiation. Then, as shown in fig. 3 (f), the susceptor 11 returns to the initial position.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present application, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
In summary, the method for effectively replacing the Degas cavity of the metal silicide process machine provided by the application can replace the function of the Degas cavity by adding the step of enabling the wafer to be close to the spray header again to remove surface water vapor and impurities at the end of the operation process of the Siconi cavity of the machine, thereby saving the floor area of the machine and reducing the transfer link of the wafer on the machine. Therefore, the application effectively improves the prior art and has high industrial utilization value.
Next, a subsequent metal silicide process is performed, comprising the steps of: cooling the wafer, and reducing the temperature of the nickel-platinum alloy during deposition; transferring the wafer to a PVD NiPt cavity of a metal silicide process machine table, and depositing a nickel-platinum alloy at a preset position of the wafer; and transferring the wafer to a PVD TiN cavity of a metal silicide process machine, and depositing titanium nitride on the nickel-platinum alloy to prevent the nickel-platinum alloy from being oxidized.
The above embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any person skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present application.

Claims (10)

1. A method for effectively replacing a Degas cavity of a metal silicide process machine, the method comprising:
firstly, transferring a wafer to a metal silicide process machine;
step two, the wafer is sent into a Siconi cavity of the machine for surface pre-cleaning treatment so as to remove silicon oxide on the surface of the wafer;
and step three, removing water vapor and impurities on the surface of the wafer in the Siconi cavity.
2. The method as claimed in claim 1, wherein after the second step, the wafer is lifted to a position where the distance between the surface of the wafer and the shower head in the Siconi chamber is 1.0mm to 1.5mm, and the water vapor and impurities on the surface of the wafer are removed by using the heat generated by the thermal radiation of the shower head.
3. The method of claim 2, wherein the temperature of the showerhead is 175 ℃ to 180 ℃.
4. The method of claim 2, wherein the wafer is raised to the position by a liftable pedestal within the Siconi chamber.
5. The method of claim 1, wherein the surface pre-cleaning treatment comprises the steps of:
step S1, introducing a gas mixture NF into the Siconi cavity 3 And NH 3 ；
S2, generating an etching agent for the surface pre-cleaning treatment in the Siconi cavity;
s3, generating decomposable etching byproducts on the surface of the wafer;
and S4, removing the etching by-products.
6. The method of claim 5, wherein after step S3 is completed, the wafer is raised to a position where the distance between the surface of the wafer and the showerhead in the Siconi chamber is 1.8mm-2.1 mm.
7. The method of claim 6, wherein the step S4 is performed at a temperature of 175 ℃ to 180 ℃ in the showerhead.
8. The method of claim 5, wherein the etchant is NH 4 F and NH 4 F·HF。
9. The method of claim 5, wherein the etch byproduct is (NH) 4 ) 2 SiF 6 。
10. The method as claimed in claim 1, further comprising, after removing the moisture and impurities from the wafer surface, the steps of: cooling the wafer to reduce the temperature of the nickel-platinum alloy during deposition; transferring the wafer to a PVD NiPt cavity of the machine table, and depositing a nickel-platinum alloy at a preset position of the wafer; and transferring the wafer to a PVD TiN chamber of the machine station, and depositing titanium nitride on the nickel-platinum alloy to prevent oxidation of the nickel-platinum alloy.
CN202211195337.3A 2022-09-29 2022-09-29 Method for effectively replacing Degas cavity of metal silicide process machine Pending CN115433898A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136678A (en) * 1998-03-02 2000-10-24 Motorola, Inc. Method of processing a conductive layer and forming a semiconductor device
US20120276740A1 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Methods for precleaning a substrate prior to metal silicide fabrication process
CN104078399A (en) * 2014-07-25 2014-10-01 上海华力微电子有限公司 Reaction cavity and method for SiConi etching
CN104813450A (en) * 2012-10-02 2015-07-29 应用材料公司 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
CN113205994A (en) * 2021-04-25 2021-08-03 华虹半导体(无锡)有限公司 Method for forming metal silicide layer
CN113889426A (en) * 2020-09-17 2022-01-04 台湾积体电路制造股份有限公司 Semiconductor processing apparatus and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136678A (en) * 1998-03-02 2000-10-24 Motorola, Inc. Method of processing a conductive layer and forming a semiconductor device
US20120276740A1 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Methods for precleaning a substrate prior to metal silicide fabrication process
CN104813450A (en) * 2012-10-02 2015-07-29 应用材料公司 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
CN104078399A (en) * 2014-07-25 2014-10-01 上海华力微电子有限公司 Reaction cavity and method for SiConi etching
CN113889426A (en) * 2020-09-17 2022-01-04 台湾积体电路制造股份有限公司 Semiconductor processing apparatus and method
CN113205994A (en) * 2021-04-25 2021-08-03 华虹半导体(无锡)有限公司 Method for forming metal silicide layer

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