CN115425926A - Harmonic noise-like circulating voltage-controlled oscillator - Google Patents

Harmonic noise-like circulating voltage-controlled oscillator Download PDF

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CN115425926A
CN115425926A CN202211084265.5A CN202211084265A CN115425926A CN 115425926 A CN115425926 A CN 115425926A CN 202211084265 A CN202211084265 A CN 202211084265A CN 115425926 A CN115425926 A CN 115425926A
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tube
nmos
oscillator
pmos
voltage
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曹瀚璋
黄同德
吴文
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Nanjing University of Science and Technology
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Nanjing University of Science and Technology
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H03B1/04—Reducing undesired oscillations, e.g. harmonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors

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Abstract

The invention discloses a harmonic noise-like circulating voltage-controlled oscillator, which is composed of an NMOS (N-channel metal oxide semiconductor) tube N 1 NMOS tube N 2 PMOS tube P 1 PMOS tube P 2 Gate capacitorC G A drain electrode capacitorC D And three mutually coupled inductorsL P 、L S 、L T Three mutually coupled inductorsL P 、L S 、L T Form a transformer T 1 Grid capacitanceC G And drain electrode capacitorC D And transformer T 1 Forming the resonant cavity of the oscillator. The invention can effectively reduce the phase noise generated by the voltage-controlled oscillator and obtain excellent noise performance by reducing the noise generated by the transistor and reducing the conversion from the noise to the phase noise.

Description

Harmonic noise-like circulating voltage-controlled oscillator
Technical Field
The invention relates to a microwave monolithic integrated circuit and a microelectronic technology, in particular to a harmonic noise circulation voltage-controlled oscillator.
Background
In recent years, with the development of wireless communication systems, requirements for higher frequencies, smaller sizes, lower power consumption, and the like are being made for radio frequency front end transmitting and receiving systems. Meanwhile, as the frequency is continuously increased, the wireless communication depends on a more complex modulation scheme, so that a higher purity requirement is put forward on the local oscillation signal. However, as the frequency increases, the phase noise of the oscillator gradually deteriorates, mainly because the performance of both the passive device and the active device in the oscillator deteriorates to some extent as the operating frequency increases. The quality factor is greatly reduced on a passive device; the gain and the switching characteristic are obviously reduced on the active device.
In order to solve such a problem, a noise-cycle oscillator has been proposed by researchers, and by designing a topology in which NMOS transistors and PMOS transistors are stacked and simultaneously turning on or off transistors on the same side, noise generated by the transistors can be effectively reduced. In addition, in recent years, harmonic oscillators have been widely studied by researchers, and a resonant cavity formed by a transformer and a capacitor, which are coupled to each other, is designed so that the resonant cavity has a high-order resonance characteristic. By designing the resonant point of the resonant cavity to be positioned at the fundamental frequency and the third harmonic of the oscillator, the oscillator is in a Class-F oscillation state, and the conversion of the noise of the transistor into phase noise can be effectively reduced. However, the proposed noise-cycle oscillator reduces the phase noise of the entire oscillator only from the viewpoint of noise generation, and the harmonic oscillator optimizes the phase noise performance only from the viewpoint of noise to phase noise transfer. In order to further reduce the phase noise, it is necessary to optimize the phase noise while considering both noise generation and a phase noise generation factor of noise to phase noise in the design of the oscillator.
Disclosure of Invention
The invention aims to provide a harmonic noise-like cyclic voltage-controlled oscillator.
The technical solution for realizing the purpose of the invention is as follows: a harmonic noise-like cyclic voltage-controlled oscillator is composed of an NMOS transistor N 1 NMOS transistor N 2 PMOS tube P 1 PMOS tube P 2 A gate capacitor C G Drain electrode capacitance C D And three mutually coupled inductors L P 、L S 、L T The transformer is composed;
the harmonic noise-like cyclic oscillator is characterized in that the NMOS tube N 1 Source and PMOS pipe P 1 Is connected with the source electrode of the NMOS tube N 1 Drain and inductor L P Positive electrode and drain electrode capacitance C D Is connected with one end of the NMOS tube N 1 Gate and inductor L of S Negative electrode and grid electrode capacitance C G Connecting; PMOS pipe P 1 Gate and inductor L of T Is connected with the positive pole of the PMOS tube P 1 The drain of (2) is grounded; NMOS tube N 2 Source and PMOS pipe P 2 Is connected with the source electrode of the NMOS tube N 2 Drain and inductor L P Negative electrode and drain electrode capacitor C D Is connected with the other end of the NMOS tube N 2 Gate and inductor L of S Positive electrode and grid capacitance C G The other ends are connected; PMOS tube P 2 Gate and inductor L of T Is connected with the negative electrode of a PMOS tube P 2 The drain of (2) is grounded; inductor L P Center tap V DD Potential, energy supply to the whole voltage-controlled oscillator, inductance L S Center tap V BIASN Potential of NMOS transistor N 1 And NMOS tube N 2 Providing a gate DC voltage bias, L T Center tap V BIASP Potential of PMOS transistor P 1 And PMOS tube P 2 Providing a gate dc voltage bias.
Three mutually coupled inductors L P 、L S 、L T Form a transformer T 1 Inductance L P And an inductance L S Has a coupling coefficient of K PS Inductance L P And an inductance L T Has a coupling coefficient of K PT Inductance L S And an inductance L T Has a coupling coefficient of K ST And a transformer T 1 Occupying only the layout area of one inductor.
The resonant cavity of the oscillator is composed of a grid capacitor C G And a drain electrode capacitor C D And three mutually coupled inductors L P 、L S 、L T The formed transformer is formed, and the NMOS tube N of the oscillator 1 NMOS transistor N 2 PMOS tube P 1 PMOS tube P 2 Connected by cross-coupling to provide negative resistance to the resonator and to maintain the oscillatorAnd (4) oscillating.
PMOS tube P 1 And P 2 Is supplied with a gate input voltage through a transformer T 1 Is achieved by the magnetic coupling of (a); during one oscillation period, when the inductance L is P When the positive electrode of (2) is at a high potential, the transformer T is used 1 So that the inductance L is coupled T The positive electrode of (B) is at a high potential, thereby obtaining a PMOS tube P 1 And P 2 The gate voltage of (c).
In the first 1/2 oscillation period, the NMOS transistor N 1 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 1 The grid of (2) is at low potential, so that the NMOS transistor N 1 And PMOS tube P 1 Conducting at the same time; in the last 1/2 oscillation period, the NMOS tube N 1 The grid voltage of the NMOS transistor is low potential because of the NMOS transistor N 2 The drain voltage of the PMOS transistor is high 1 The grid of (2) is high potential, so that the NMOS tube N 1 And PMOS tube P 1 Simultaneously turning off;
in the first 1/2 oscillation period, the NMOS transistor N 2 The grid voltage of (2) is low potential, because of the NMOS tube N 2 The drain voltage of the PMOS transistor is high 2 The grid of (1) is high potential, so that the NMOS transistor N 2 And PMOS tube P 2 Simultaneously turning off; in the last 1/2 oscillation period, the NMOS tube N 2 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 2 The grid of (2) is at low potential, so that the NMOS transistor N 2 And PMOS tube P 2 And is simultaneously turned on.
The resonant cavity composed of the transformer and the capacitor has high-order oscillation characteristics, in the design of the differential mode resonant cavity, a first resonance point of the differential mode resonant cavity is designed at the fundamental frequency of the oscillation of the oscillator, and a second resonance point of the differential mode resonant cavity is designed at the third harmonic of the oscillation of the oscillator; when the common mode resonant cavity is designed, the resonance point of the common mode resonant cavity is designed at the second harmonic frequency of the oscillator, so that the whole oscillator works in Class-F 23 Under the oscillation state of (1).
Compared with the prior art, the invention has the following remarkable advantages: (1) Noise-recycling oscillator andClass-F 23 the oscillator is combined, and the phase noise performance of the oscillator is optimized in terms of noise generation and noise to phase noise transmission; (2) The transformer composed of three mutually coupled inductors realizes Class-F through a high-order resonant cavity composed of the transformer 23 The working state of the oscillator realizes the design of noise circulation, and only occupies the area of one inductor; (3) The transformer-based resonators have a higher quality factor at the fundamental frequency than the inductor-based resonators, and can be characterized solely by optimizing the phase noise of the oscillator.
Drawings
Fig. 1 is a schematic diagram of a topology of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a transformer according to an embodiment of the present invention;
fig. 3 is a simulation result of a time domain signal of a harmonic noise-like cyclic voltage controlled oscillator in an oscillation period according to an embodiment of the present invention;
FIG. 4 is a harmonic noise-like circulating VCO resonant cavity equivalent circuit provided by an embodiment of the present invention;
FIG. 5 shows simulation results of input impedance of a resonant cavity according to an embodiment of the present invention;
fig. 6 is a complete schematic diagram of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the present invention;
fig. 7 is a frequency adjustment range curve of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the present invention;
fig. 8 is a phase noise curve of a harmonic noise-like cyclic voltage controlled oscillator according to an embodiment of the present invention.
Fig. 9 is a layout of a harmonic noise-like cyclic oscillator according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Fig. 1 is a topology structure of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the disclosure, and referring to fig. 1, the oscillator is composed of an NMOS transistor N 1 NMOS transistor N 2 PMOS tube P 1 PMOS tube P 2 A gate capacitor C G And a drain electrode capacitor C D And three mutually coupled inductors L P 、L S 、L T Formed transformer T 1 Composition is carried out; NMOS tube N 1 Source and PMOS pipe P 1 Is connected with the source electrode of the NMOS tube N 1 Drain and inductor L P Positive electrode and drain electrode capacitance C D Is connected with one end of the NMOS tube N 1 Gate and inductor L of S Negative electrode and grid electrode capacitance C G Connecting; PMOS tube P 1 Gate and inductor L of T Is connected with the positive pole of the PMOS tube P 1 The drain of (2) is grounded; NMOS tube N 2 Source and PMOS pipe P 2 Is connected with the source electrode of the NMOS tube N 2 Drain and inductor L P Negative electrode and drain electrode capacitor C D Is connected with the other end of the NMOS tube N 2 Gate and inductor L of S Positive electrode and grid capacitance C G The other ends are connected; PMOS pipe P 2 Gate and inductor L of T Is connected with the negative electrode of a PMOS tube P 2 The drain electrode of (2) is grounded; inductor L P Center tap V DD Potential, energy supply to the whole voltage-controlled oscillator, inductance L S Center tap V BIASN Potential of NMOS transistor N 1 And NMOS tube N 2 Providing a gate DC voltage bias, L T Center tap V BIASP Potential of PMOS transistor P 1 And PMOS tube P 2 Providing a gate dc voltage bias.
Furthermore, in the harmonic noise-like cyclic oscillator, the resonant cavity of the oscillator is formed by a grid capacitor C G And a drain electrode capacitor C D And three mutually coupled inductors L P 、L S 、L T The transformer is composed; NMOS tube N of oscillator 1 NMOS tube N 2 PMOS tube P 1 PMOS tube P 2 The cross coupling mode is adopted for connection, negative resistance is provided for the resonant cavity, and oscillation of the oscillator is maintained.
FIG. 2 is a schematic diagram of a transformer structure provided by an embodiment of the present invention, in which three inductors L are coupled to each other P 、L S 、L T Form a transformer T 1 Inductance L P And an inductance L S Has a coupling coefficient of K PS Inductance L P And an inductance L T Has a coupling coefficient of K PT Inductance L S And an inductance L T Has a coupling coefficient of K ST And three transformers only occupy the layout area of one inductor.
In the harmonic noise-like cyclic oscillator, the PMOS tube P 1 And P 2 Is supplied with a gate input voltage through a transformer T 1 Is achieved by the magnetic coupling of (a); during one oscillation period when the inductance L is P When the positive electrode of (2) is at a high potential, the transformer T is used 1 So that the inductance L is T The positive electrode of (B) is at a high potential, thereby obtaining a PMOS tube P 1 And P 2 The gate voltage of (c).
FIG. 3 is a simulation result of the time domain signal of the harmonic noise-like cyclic voltage-controlled oscillator provided by the embodiment of the present invention in one oscillation period, in the first 1/2 oscillation period, the NMOS transistor N 1 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 1 The grid of (2) is at low potential, so that the NMOS transistor N 1 And PMOS tube P 1 Conducting at the same time; in the last 1/2 oscillation period, the NMOS tube N 1 The grid voltage of the NMOS transistor is low potential because of the NMOS transistor N 2 The drain voltage of the PMOS transistor is high 1 The grid of (1) is high potential, so that the NMOS transistor N 1 And PMOS tube P 1 Simultaneously turning off; in the first 1/2 oscillation period, the NMOS transistor N 2 The grid voltage of the NMOS transistor is low potential because of the NMOS transistor N 2 The drain voltage of the PMOS transistor is high 2 The grid of (2) is high potential, so that the NMOS tube N 2 And PMOS tube P 2 Simultaneously turning off; in the last 1/2 oscillation period, the NMOS tube N 2 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 2 The grid of (2) is at low potential, so that the NMOS transistor N 2 And PMOS tube P 2 Conducting at the same time; due to the fact thatThe oscillator has a noise cycle characteristic.
FIG. 4 is a harmonic noise-like cyclic VCO resonator equivalent circuit according to an embodiment of the present invention, as shown in FIG. 4, r P Is an inductance L P Equivalent loss resistance of L Pe Is an inductance L P Can be expressed as
Figure BDA0003834827880000051
r S Is an inductance L S Equivalent loss resistance of (L) Se Is an inductance L S Can be expressed as
Figure BDA0003834827880000052
r T Is an inductance L T Equivalent loss resistance of L Te Is an inductance L T Can be expressed as
Figure BDA0003834827880000053
L P And L S Equivalent coil ratio of N S Can be expressed as
Figure BDA0003834827880000054
L P And L T Equivalent coil ratio of (N) T Can be expressed as
Figure BDA0003834827880000055
The mutual inductance M can be expressed as
Figure BDA0003834827880000056
C T Is a PMOS tube P 1 The gate parasitic capacitance of (1). The differential mode input impedance of the cavity can therefore be expressed as:
Figure BDA0003834827880000057
FIG. 5 shows simulation results of resonant cavity input impedance provided by an embodiment of the present invention, and referring to FIG. 5, a resonant cavity composed of a transformer and a capacitor has a high-order oscillation characteristic in a differential modeWhen the resonant cavity is designed, a first resonant point of the differential mode resonant cavity is designed at the fundamental frequency of the oscillation of the oscillator, and a second resonant point of the differential mode resonant cavity is designed at the third harmonic of the oscillation of the oscillator; when the common mode resonant cavity is designed, the resonant point of the common mode resonant cavity is designed at the second harmonic frequency of the oscillator, so that the whole oscillator works in Class-F 23 Under the oscillation state of (1).
Fig. 6 is a complete schematic diagram of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the present invention, wherein a gate capacitor C is used to expand a frequency adjustment bandwidth G Switched capacitor array C designed to consist of four-bit differential switched capacitors G,diff Bank and fixed capacitor C G,diff And varactors C of the differential connection type Var Meanwhile, the continuous adjustment of the frequency can be realized; drain electrode capacitance C D Switched capacitor array C designed to consist of three-bit differential switched capacitors D,diff Switched capacitor array C consisting of three-position single-ended switched capacitors D,se Bank and fixed capacitor C D,diff 。
Fig. 7 shows a frequency adjustment range curve of a harmonic noise-like cyclic voltage-controlled oscillator according to an embodiment of the present invention, and by designing a switched capacitor array and a varactor, continuous frequency adjustment from 5.29GHz to 6.38GHz can be achieved.
FIG. 8 is a phase noise curve of a harmonic-like noise-circulating oscillator according to an embodiment of the present invention, in which the phase noise performance of the oscillator is optimized from two aspects of noise generation and noise transfer to phase noise by combining the noise-circulating oscillator with a Class-F23 oscillator, where the phase noise is-105.95 dBc/Hz at a frequency offset of 100kHz, is-126.18 dBc/Hz at a frequency offset of 1MHz, and is-145.973 dBc/Hz at a frequency offset of 10 MHz.
FIG. 9 is a layout of a harmonic noise-like cyclic oscillator according to an embodiment of the present invention, in which the area of the core layout is only 0.216mm 2 The design of the voltage-controlled oscillator with excellent phase noise performance is completed in a small area.
All possible combinations of the technical features in the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (5)

1. A harmonic noise-like cyclic voltage-controlled oscillator is characterized by comprising an NMOS (N-channel metal oxide semiconductor) transistor N 1 NMOS tube N 2 PMOS tube P 1 PMOS tube P 2 A gate capacitor C G Drain electrode capacitance C D Three mutually coupled inductors L P 、L S 、L T Composed of three mutually coupled inductors L P 、L S 、L T Form a transformer T 1 Grid capacitance C G Drain electrode capacitance C D And transformer T 1 A resonant cavity comprising an oscillator, wherein:
NMOS tube N 1 Source and PMOS pipe P 1 Is connected with the source electrode of the NMOS tube N 1 Drain and inductor L P Positive electrode and drain electrode capacitance C D Is connected with one end of the NMOS tube N 1 Gate and inductor L of S Negative electrode and grid electrode capacitance C G Connecting; PMOS tube P 1 Gate and inductor L of T Is connected with the positive pole of the PMOS tube P 1 The drain of (2) is grounded; NMOS tube N 2 Source and PMOS pipe P 2 Is connected with the source electrode of the NMOS tube N 2 Drain and inductor L P Negative electrode and drain electrode capacitor C D Is connected with the other end of the NMOS tube N 2 Gate and inductor L of S Positive electrode and grid capacitance C G The other end is connected; PMOS tube P 2 Gate and inductor L of T Is connected with the negative electrode of a PMOS tube P 2 The drain of (2) is grounded; inductor L P Center tap V DD Potential, energy supply to the whole voltage-controlled oscillator, inductance L S Center tap V BIASN Potential of NMOS transistor N 1 And NMOS tube N 2 Providing a gate DC voltage bias, L T Center tap V BIASP Potential of PMOS transistor P 1 And PMOS tube P 2 Providing a gate dc voltage bias.
2. The harmonic noise-like cyclic oscillator of claim 1 wherein the NMOS transistor N of the oscillator 1 NMOS transistor N 2 PMOS tube P 1 PMOS tube P 2 The resonant cavity is connected in a cross-coupling mode, negative resistance is provided for the resonant cavity, and oscillation of the oscillator is maintained.
3. The harmonic noise-like cyclic oscillator of claim 1, wherein the PMOS transistor P 1 And P 2 By a transformer T 1 Is realized when the inductance L is in an oscillation period P When the positive electrode of (2) is at a high potential, due to the transformer T 1 So that the inductance L is T The positive electrode of (B) is at a high potential, thereby obtaining a PMOS tube P 1 And P 2 The gate voltage of (c).
4. The harmonic noise-like cyclic oscillator of claim 1 wherein the NMOS transistor N during the first 1/2 oscillation period 1 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 1 The grid of the NMOS tube N is a low potential 1 And PMOS tube P 1 Conducting at the same time; in the last 1/2 oscillation period, the NMOS tube N 1 The grid voltage of (2) is low potential, because of the NMOS tube N 2 The drain voltage of the PMOS transistor P is high 1 The grid of (2) is high potential, NMOS tube N 1 And PMOS tube P 1 Simultaneously turning off;
in the first 1/2 oscillation period, the NMOS tube N 2 The grid voltage of the NMOS transistor is low potential because of the NMOS transistor N 2 Of the drain electrodeVoltage is high potential, PMOS tube P 2 The grid of (2) is high potential, NMOS tube N 2 And PMOS tube P 2 Simultaneously turning off; in the last 1/2 oscillation period, the NMOS tube N 2 The grid voltage of (2) is high potential due to NMOS transistor N 2 The drain voltage of the PMOS transistor is low potential 2 The grid of the NMOS transistor is a low potential, and the NMOS transistor N 2 And PMOS tube P 2 And is simultaneously turned on.
5. The harmonic noise-like cyclic oscillator of claim 1, wherein in the design of the differential mode cavity, a first resonance point of the differential mode cavity is designed at a fundamental frequency of oscillation of the oscillator, and a second resonance point of the differential mode cavity is designed at a third harmonic of oscillation of the oscillator; in the design of the common mode resonant cavity, the resonance point of the common mode resonant cavity is designed at the second harmonic frequency of the oscillator, so that the whole oscillator works in Class-F 23 Under the oscillation state of (1).
CN202211084265.5A 2022-09-06 2022-09-06 Harmonic noise-like circulating voltage-controlled oscillator Pending CN115425926A (en)

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