CN115425118A

CN115425118A - Manufacturing method of LED packaging module and LED packaging module

Info

Publication number: CN115425118A
Application number: CN202210834335.8A
Authority: CN
Inventors: 蒋振宇
Original assignee: Individual
Current assignee: Suzhou Qiushui Semiconductor Technology Co ltd
Priority date: 2022-07-14
Filing date: 2022-07-14
Publication date: 2022-12-02

Abstract

The application discloses a manufacturing method of an LED packaging module and the LED packaging module, wherein the manufacturing method of the LED packaging module comprises the following steps: providing a substrate; forming a patterned first sealing adhesive layer on the substrate, wherein the first sealing adhesive layer forms at least one recessed area; placing an LED chip in the concave area, wherein the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the concave area is gradually reduced in the direction from the light-emitting surface to the backlight surface; and filling a second sealing adhesive layer in the recessed area, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and the first sealing adhesive layer is used for reflecting light rays generated by the LED chip and transmitted in the second sealing adhesive layer. Through the mode, the LED packaging module manufacturing method is simpler, the production efficiency is higher, and the luminous efficiency of the correspondingly obtained LED packaging module is also higher.

Description

Manufacturing method of LED packaging module and LED packaging module

Technical Field

The present disclosure relates to circuit board technologies, and in particular, to a method for manufacturing an LED package module and an LED package module.

Background

Nowadays, a light-emitting diode (LED) package module generally involves two chip structures, namely a front-side chip and a flip-chip.

Among them, the heat conduction performance of the front chip is generally poor due to the sapphire substrate, so that the light output and reliability of the chip are reduced; and the forward mounting also needs a gold wire bonding mode to realize corresponding electric connection of the LED chip, and a conventional packaging support is needed, so that the forward mounting packaging is limited to be light and thin. The manufacturing process of the flip chip is complex, the reflector absorbs light generally, photoelectric conversion efficiency is affected, and the red light flip chip is difficult to realize, so that production efficiency and manufacturing cost are high.

Disclosure of Invention

The application provides a manufacturing method of an LED packaging module and the LED packaging module, which are used for solving the problems that the LED packaging module in the prior art is not high in light emitting efficiency, cannot be effectively thinned, or is complex in process, low in photoelectric conversion efficiency, and high in production efficiency and manufacturing cost.

The technical scheme adopted by the application is as follows: a manufacturing method of an LED packaging module is provided, wherein the manufacturing method comprises the following steps: providing a substrate; forming a patterned first sealing adhesive layer on the substrate, wherein the first sealing adhesive layer forms at least one recessed area; placing an LED chip in the recessed area, wherein the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the recessed area is gradually reduced in the direction from the light-emitting surface to the backlight surface; and filling a second sealing adhesive layer in the recessed region, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and the first sealing adhesive layer is used for reflecting light rays generated by the LED chip and transmitted in the second sealing adhesive layer.

The cross section size of the concave area is gradually reduced in the direction towards the substrate, and the light emitting surface of the LED chip is arranged away from the substrate.

The step of forming the patterned first adhesive layer on the substrate includes: forming a first adhesive layer on the substrate; exposing and developing the first adhesive sealing layer to form a concave area; baking the exposed and developed first adhesive sealing layer to change the cross section size of the recessed area; or forming a first adhesive sealing layer on the substrate; carrying out mould pressing on the first adhesive sealing layer to form a concave area; or spraying a first adhesive sealing layer at a fixed point on the substrate to form a crossed grid pattern; and curing the grid pattern to enable the non-spraying area surrounded by the grid pattern to be used as a concave area.

Wherein, the base plate is interim base plate, and the LED chip further includes first electrode and the second electrode of setting on the backlight face, and wherein the backlight face sets up towards interim base plate, and the manufacturing approach further includes: removing the temporary substrate; and forming a rewiring layer on one side of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer, which corresponds to the backlight surface, wherein the rewiring layer comprises a first wiring pattern and a second wiring pattern which are respectively electrically connected with the first electrode and the second electrode.

Wherein the manufacturing method further comprises: and forming a third adhesive sealing layer on one side of the LED chip, the first adhesive sealing layer and the second adhesive sealing layer, which corresponds to the backlight surface, wherein the third adhesive sealing layer is in contact with the second adhesive sealing layer and is used for reflecting light transmitted in the second adhesive sealing layer, and at least part of the first wiring pattern and the second wiring pattern are exposed from the third adhesive sealing layer.

The substrate is a metal substrate, a first conductive column and a second conductive column are arranged on the metal substrate in a protruding mode, and the first conductive column and the second conductive column are exposed through the first sealing adhesive layer; the LED chip further comprises a first electrode and a second electrode which are arranged on the light emitting surface, wherein the backlight surface is arranged towards the metal substrate, and the manufacturing method further comprises the following steps: forming a first lead and a second lead on the LED chip, the first adhesive layer and the second adhesive layer at one side corresponding to the light-emitting surface, wherein the first lead and the second lead are respectively and electrically connected with the first conductive column and the first electrode as well as the second conductive column and the second electrode; and patterning the metal substrate to form a first metal pattern and a second metal pattern which are electrically isolated from each other and are respectively electrically connected with the first conductive column and the second conductive column.

Wherein the manufacturing method further comprises: and a third adhesive layer is further formed in the gap between the first metal pattern and the second metal pattern, and is in contact with the second adhesive layer and used for reflecting light transmitted in the second adhesive layer.

The application adopts another technical scheme that: provided is an LED package module, wherein the LED package module includes: the first sealing glue layer forms at least one concave area; the LED chip is placed in the concave area, the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the concave area is gradually reduced in the direction from the light-emitting surface to the backlight surface; and the second sealing adhesive layer is filled in the recessed area, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and partial light of the LED chip is transmitted in the second sealing adhesive layer and is reflected by the first sealing adhesive layer.

The LED packaging module further comprises a rewiring layer arranged on one side, corresponding to the backlight surface, of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer, and the rewiring layer comprises a first wiring pattern and a second wiring pattern which are electrically connected with the first electrode and the second electrode respectively.

The LED packaging module further comprises a third sealing adhesive layer arranged on one side, corresponding to the backlight surface, of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer, wherein the third sealing adhesive layer is in contact with the second sealing adhesive layer and used for reflecting light transmitted in the second sealing adhesive layer, a first through hole and a second through hole are formed in the third sealing adhesive layer, and the first wiring pattern and the second wiring pattern are electrically connected with the first electrode and the second electrode through the first through hole and the second through hole respectively.

The LED packaging module further comprises a metal substrate, a first lead and a second lead, wherein a first conductive column and a second conductive column are arranged on the metal substrate in a protruding mode and exposed through the first sealing adhesive layer; the LED chip further comprises a first electrode and a second electrode which are arranged on the light emitting surface, wherein the backlight surface is arranged towards the metal substrate, the first lead and the second lead are arranged on one side, corresponding to the light emitting surface, of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer and used for being electrically connected with the first conductive column and the first electrode and the second conductive column and the second electrode respectively, and the metal substrate is further divided into a first metal pattern and a second metal pattern which are electrically connected with the first conductive column and the second conductive column respectively.

The LED packaging module further comprises a third adhesive sealing layer arranged in a gap between the first metal pattern and the second metal pattern, and the third adhesive sealing layer is in contact with the second adhesive sealing layer and used for reflecting light rays in the second adhesive sealing layer.

The beneficial effect of this application is: different from the situation of the prior art, the manufacturing method of the LED package module of the present application forms the patterned first encapsulant layer on the substrate, wherein the first encapsulant layer forms at least one recessed area to place the LED chip in the recessed area, wherein the LED chip includes the light emitting surface and the backlight surface opposite to the light emitting surface, the cross-sectional size of the recessed area gradually decreases in a direction from the light emitting surface to the backlight surface, so as to fill the second encapsulant layer in the recessed area, wherein the second encapsulant layer surrounds the periphery of the LED chip and is connected to the LED chip and the first encapsulant layer, and the first encapsulant layer is used for reflecting light generated by the LED chip and transmitted in the second encapsulant layer, so as to effectively improve the light emitting efficiency of the LED chip, and by adopting a semiconductor process wiring instead of a conventional gold wire punching manner, the light and thinness of the correspondingly obtained LED package module can also be effectively realized; and a conventional packaged bracket and a reflector do not need to be correspondingly arranged, so that the photoelectric conversion efficiency can be effectively improved, the overall manufacturing process is simplified, the production efficiency is improved, and the production cost is reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:

fig. 1a is a schematic flow chart of a first embodiment of a method for manufacturing an LED package module according to the present invention;

FIGS. 1 b-1 e are schematic structural diagrams of an embodiment corresponding to S11-S14 in FIG. 1 a;

FIG. 2a is a schematic flow chart of one embodiment corresponding to S12 in FIG. 1 a;

FIGS. 2 b-2 d are schematic structural diagrams of an embodiment corresponding to S1211-S1213 in FIG. 2 a;

FIG. 3 is a schematic flow chart of another embodiment corresponding to S12 in FIG. 1 a;

FIG. 4 is a schematic flow chart of another embodiment corresponding to S12 in FIG. 1 a;

fig. 5a is a schematic flow chart of a second embodiment of the processing method of the LED package module according to the present application;

FIGS. 5 b-5 g are schematic structural diagrams of an embodiment corresponding to S21-S26 in FIG. 5 a;

fig. 6a is a schematic flow chart of a third embodiment of the processing method of the LED package module according to the present application;

FIGS. 6 b-6 m are schematic structural diagrams of an embodiment corresponding to S31-S36 in FIG. 6 a;

fig. 7 is a schematic structural diagram of a first embodiment of an LED package module according to the present application;

FIG. 8 is a schematic structural diagram of a second embodiment of an LED package module according to the present application;

FIG. 9 is a top view of the LED package module of FIG. 8;

fig. 10 is a bottom view of the LED package module of fig. 8.

Detailed Description

In order to make the technical problems solved, the technical solutions adopted, and the technical effects achieved by the present application clearer, the technical solutions of the embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.

Referring to fig. 1a to 1e, fig. 1a is a schematic flow chart of a first embodiment of a method for manufacturing an LED package module according to the present application, and fig. 1b to 1e are schematic structural diagrams of an embodiment corresponding to S11 to S14 in fig. 1 a. The implementation mode comprises the following steps:

s11: a substrate is provided.

Specifically, as shown in fig. 1b, in order to facilitate the smooth operation of the manufacturing process, a substrate 41 having a certain supporting strength is first provided, for example, a temporary substrate 41 capable of temporarily supporting the strength, or a metal substrate 41 participating in the subsequent process flow.

S12: a patterned first encapsulant layer is formed on the substrate, wherein the first encapsulant layer forms at least one recess region.

Further, as shown in fig. 1c, a first adhesive layer 42 is formed on the substrate 41, and the first adhesive layer 42 is patterned, so as to correspondingly form at least one recessed region 421 on the first adhesive layer 42.

S13: the LED chip is placed in the concave area, wherein the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the concave area is gradually reduced in the direction from the light-emitting surface to the backlight surface.

Still further, as shown in fig. 1d, a correspondingly provided LED chip 43 is disposed in each of the concave regions 421, for example, each LED chip 43 is correspondingly adhered to the bottom of each of the concave regions 421, i.e. a corresponding position of the substrate 41, by an adhesive material such as die attach adhesive, a thermal decomposition film, or a UV film.

The LED chip 43 specifically includes a light-emitting surface (not shown) and a backlight surface (not shown) opposite to the light-emitting surface, and the cross-sectional size of the recessed area 421 in the first adhesive layer 42 is gradually decreased in a direction from the light-emitting surface of the LED chip 43 to the backlight surface thereof.

Optionally, the accommodating space corresponding to the recessed area 421 may be partially conical, trapezoidal, or any other reasonable shape, which is not limited in this application.

It can be understood that the forming position and number of the recessed regions 421 correspond to the packaging position and number of the LED chips 43 to be packaged in the LED packaging module.

Optionally, one LED chip 43 is disposed in each recessed area 421. In other embodiments, a plurality of LED chips 43 are disposed in each of the recessed areas 421, and the plurality of LED chips 43 can be electrically connected in series, parallel, or the like in a subsequent wiring process. And thousands of recess regions 421 may be formed on the first adhesive sealing layer 42, and the plastic package lead process is completed at the same time, which is determined by actual manufacturing requirements, and this application does not limit this.

For convenience of understanding, in the present embodiment, the number of the LED chips 43 is 2, and specifically, the LED chips are flip chips, it can be known that the cross-sectional size of the recessed area 421 in the first adhesive layer 42 is gradually reduced in a direction toward the substrate 41, and the light emitting surface of the LED chip 43 is disposed away from the substrate 41.

In other embodiments, the number of the LED chips 43 may also be any reasonable number such as 1, 3, 100, or 1000, or may also be a normal-mount chip, and the structural feature of the recessed region 421 in the first adhesive sealing layer 42 and the direction of the light-emitting surface of the LED chip 43 may also be any other reasonable form, which is specifically determined by an actual manufacturing process scenario, which is not limited in this application.

S14: and filling a second sealing adhesive layer in the recessed area, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and the first sealing adhesive layer is used for reflecting light rays generated by the LED chip and transmitted in the second sealing adhesive layer.

Further, as shown in fig. 1e, a second adhesive layer 44 is correspondingly filled in the recessed region 421 of the first adhesive layer 42, and specifically, the second adhesive layer 44 surrounds the periphery of the LED chip 43 and connects the LED chip 43 and the first adhesive layer 42.

The first adhesive layer 42 is used for reflecting light generated by the LED chip 43 and transmitted in the second adhesive layer 44, so as to effectively improve the light-emitting efficiency of the LED chip 43.

And one sides of the second adhesive layer 44 and the first adhesive layer 42 corresponding to the light-emitting surface of each LED chip 43 are flush with each other.

Alternatively, the second adhesive layer 44 may be made of any reasonable transparent insulating material such as high-refraction transparent adhesive or transparent resin, which is not limited in this application.

Further, in an embodiment, after the step S14, the method may further include: one side of the second adhesive layer 44 corresponding to the light-emitting surface of the LED chip 43 is ground or etched, so that the second adhesive layer 44 and one side of the first adhesive layer 42 corresponding to the light-emitting surface of the LED chip 43 are flush with each other.

It can be understood that, when the recess region 421 in the first encapsulant layer 42 is filled with the second encapsulant layer 44, in order to not increase the difficulty of the process for forming the second encapsulant layer 44, it is usually inevitable that the whole board covers the first encapsulant layer 42 and the LED chip 43 after the second encapsulant layer 44 is filled in the recess region 421 in the first encapsulant layer 42. Therefore, after the second adhesive layer 44 is formed, the side of the second adhesive layer 44 corresponding to the light-emitting surface of the LED chip 43 needs to be ground or etched until it is flush with the first adhesive layer 42.

In the above scheme, the patterned first encapsulant layer 42 is formed on the substrate 41, wherein the first encapsulant layer 42 forms at least one recessed region 421, so as to place the LED chip 43 in the recessed region 421, and the recessed region 421 is filled with the second encapsulant layer 44, wherein the second encapsulant layer 44 surrounds the periphery of the LED chip 43 and connects the LED chip 43 and the first encapsulant layer 42, and the first encapsulant layer 42 is used for reflecting light generated by the LED chip 43 and transmitted in the second encapsulant layer 44, so that the light-emitting efficiency of the LED chip 43 can be effectively improved, and the light and thin of the correspondingly obtained LED package module can be effectively realized by adopting a semiconductor process wiring manner instead of a conventional gold wire manner; and a conventional packaged bracket and a reflector do not need to be correspondingly arranged, so that the photoelectric conversion efficiency can be effectively improved, the overall manufacturing process is simplified, the production efficiency is improved, and the production cost is reduced.

Referring to fig. 2a to fig. 2d, fig. 2a is a schematic flow chart of an embodiment corresponding to S12 in fig. 1a, and fig. 2b to fig. 2d are schematic structural diagrams of an embodiment corresponding to S1211 to S1213 in fig. 2 a. In an embodiment, the step S12 may further include the following steps:

s1211: and forming a first sealing adhesive layer on the substrate.

Specifically, as shown in fig. 2b, a solid or liquid or semi-cured highly reflective film is coated on the provided substrate 41 to correspondingly form a first encapsulant layer 42.

Alternatively, the first adhesive layer 42 may be made of any reasonable photosensitive material such as PI (polyimide), BCB (benzocyclobutene) doped with TiO2 (titanium dioxide), which is not limited in this application.

S1212: and exposing and developing the first sealing adhesive layer to form a concave area.

Further, as shown in fig. 2c, the first adhesive layer 42 is exposed and developed to form a recess region 421 on the first adhesive layer 42, and a designated region on the substrate 41, that is, a region where the LED chip 43 is to be mounted, is exposed.

S1213: and baking the exposed and developed first sealing adhesive layer to change the cross section size of the recessed area.

Still further, as shown in fig. 2d, the exposed and developed first adhesive layer 42 is baked and shaped to change the cross-sectional size of the concave region 421, that is, the cross-sectional size of the concave region 421 is gradually reduced from the light-emitting surface of the LED chip 43 to be mounted to the backlight surface thereof.

Referring to fig. 3, fig. 3 is a schematic flowchart illustrating another embodiment corresponding to S12 in fig. 1 a. In an embodiment, the step S12 may further include the following steps:

s1221: and forming a first sealing adhesive layer on the substrate.

Optionally, the first encapsulant layer 42 may be specifically made of any reasonable encapsulant material such as a TiO2 (titanium dioxide) -doped high-reflectivity PI (polyimide), BCB (benzocyclobutene), silica gel, and epoxy, which is not limited in this application.

S1222: and carrying out mould pressing on the first sealing glue layer to form a concave area.

Further, as shown in fig. 2d, the first encapsulant layer 42 is directly molded by molding to form a patterned recess region 421 on the first encapsulant layer 42.

Referring to fig. 4, fig. 4 is a schematic flowchart illustrating another embodiment corresponding to S12 in fig. 1 a. In an embodiment, the step S12 may further include the following steps:

s1231: and spraying a first adhesive layer at fixed points on the substrate to form a crossed grid pattern.

Specifically, as shown in fig. 2d, a first sealant layer 42 is spot-sprayed on the substrate 41, for example, the first sealant layer 42 is formed on the substrate 41 by a piezo valve spot-spraying method to form a cross-shaped grid pattern.

S1232: and curing the grid pattern to enable the non-spraying area surrounded by the grid pattern to be used as a concave area.

Further, the grid pattern is cured, for example, the first adhesive layer 42 in the grid pattern is baked or heated, so that the non-sprayed region surrounded by the grid pattern is used as the concave region 421.

Referring to fig. 5a to 5g, fig. 5a is a schematic flow chart of a second embodiment of a processing method of an LED package module according to the present application, and fig. 5b to 5g are schematic structural diagrams of an embodiment corresponding to S21 to S26 in fig. 5 a. The processing method of the LED package module in this embodiment is a schematic flow chart of a detailed example of the processing method of the LED package module in fig. 1a, and the embodiment includes the following steps:

s21: a substrate is provided.

S22: a patterned first encapsulant layer is formed on the substrate, wherein the first encapsulant layer forms at least one recess region.

S23: and placing the LED chip in the depressed area, wherein the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the depressed area is gradually reduced in the direction from the light-emitting surface to the backlight surface.

S24: and filling a second sealing adhesive layer in the recessed area, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and the first sealing adhesive layer is used for reflecting light rays generated by the LED chip and transmitted in the second sealing adhesive layer.

S21, S22, S23, and S24 are the same as S11, S12, S13, and S14 in fig. 1a, and for details, please refer to S11, S12, S13, and S14 and their related text descriptions, which are not repeated herein.

S25: the substrate is removed.

It is understood that in the present embodiment, the substrate 41 is embodied as a temporary substrate 41, and the LED chip 43 is embodied as a flip chip, and the LED chip 43 further includes a first electrode 431 and a second electrode 432 disposed on a backlight surface thereof, which is disposed toward the temporary substrate 41.

Specifically, as shown in fig. 5b, after the second sealant layer 44 is filled in the recess region 421 in the first sealant layer 42, the temporary substrate 41 can be removed.

Alternatively, the temporary substrate 41 may be any reasonable material plate with a certain supporting strength, such as a glass substrate 41 or a resin substrate 41, which is not limited in this application.

S26: and forming a rewiring layer on one side of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer, which corresponds to the backlight surface, wherein the rewiring layer comprises a first wiring pattern and a second wiring pattern which are respectively electrically connected with the first electrode and the second electrode.

Further, as shown in fig. 5c, a rewiring layer 45 is formed on the LED chip 43, the first adhesive layer 42, and the second adhesive layer 44 on the side corresponding to the backlight surface of the LED chip 43. The rewiring layer 45 specifically includes a first wiring pattern 451 and a second wiring pattern 452, the first wiring pattern 451 is electrically connected to the first electrode 431 of the LED chip 43, and the second wiring pattern 452 is electrically connected to the second electrode 432 of the LED chip 43. The wiring layer 45 can adopt a Ti/Cu metal seed layer with the thickness of 100-1000nm by sputtering, then the region of the wiring layer 45 is exposed through a dry film or photoresist exposure developing process, and then the wiring layer 45 with the thickness of 10-100 microns is obtained through an electroplating process, wherein the electroplating metal can be Cu, ni, au, ti, sn and other metals; after removing the dry film or the photoresist, the exposed seed layer is removed by chemical etching, so that the first and

second wiring patterns

451 and 452 are insulated. The metal of the metal redistribution layer in the subsequent embodiment is similar to this, and is not described again.

Further, in an embodiment, in the process of the wiring process, in order to increase the supporting strength of the panel, specifically, the light exit surfaces 43 and 44 may be placed on the temporary substrate for the wiring process, and after all processes are subsequently completed, the temporary substrate is removed, which is not described herein again.

Further, in an embodiment, as shown in fig. 5d, after S25 and before S26, the method may further include: a third adhesive layer 46 is formed on the LED chip 43, the first adhesive layer 42, and the second adhesive layer 44 on the side corresponding to the backlight surface of the LED chip 43.

The third encapsulant layer 46 is in contact with the second encapsulant layer 44 and is configured to reflect light transmitted in the second encapsulant layer 44, and the first wiring pattern 451 and the second wiring pattern 452 are at least partially exposed from the third encapsulant layer 46, that is, the first electrode 431 and the second electrode 432 in the LED chip 43 are not covered by the third encapsulant layer 46 and are exposed, so as to be able to lead out the electrodes.

Further, as shown in fig. 5e, the re-wiring layer 45 is specifically formed on the third encapsulant layer 46, and the first wiring pattern 451 in the re-wiring layer 45 is specifically electrically connected to the first electrode 431 of the LED chip 43, and the second wiring pattern 452 thereof is electrically connected to the second electrode 432 of the LED chip 43.

In another embodiment, the third adhesive layer 46 may be further formed on the LED chip 43, the first adhesive layer 42, and the second adhesive layer 44 on the side corresponding to the backlight surface, and further, a first through hole and a second through hole exposing the first electrode 431 and the second electrode 432 in the LED chip 43 are formed on the third adhesive layer 46.

The third encapsulant layer 46 is in contact with the second encapsulant layer 44 and is used for reflecting light transmitted in the second encapsulant layer 44, and the first wiring pattern 451 and the second wiring pattern 452 are electrically connected to the first electrode 431 and the second electrode 432 through a first via (not shown) and a second via (not shown), respectively.

Further, in an embodiment, as shown in fig. 5f, when at least two LED chips 43 are provided, after S26, or after the third encapsulant layer 46 and the redistribution layer 45 are sequentially formed, the method may further include: the first adhesive layer 42, or the first adhesive layer 42 and the third adhesive layer 46, are cut and separated corresponding to each LED chip 43, so as to obtain at least two LED package modules independent from each other, and each LED package module only includes one LED chip 43.

Further, in an embodiment, the S22 may specifically include: the first sealant layer 42 is fixed to the substrate 41 by bonding.

It can be understood that the first adhesive sealing layer 42 may specifically adopt a temporary adhesive to adhesively fix the first adhesive sealing layer 42 on the substrate 41, and in the subsequent process, the corresponding LED chip 43 can be further fixed by the adhesive bonding of the temporary adhesive.

Further, in an embodiment, after S25 and before S26, the method may further include: the LED chip 43, the first adhesive layer 42, and the second adhesive layer 44 are ground, etched, or cleaned on the side corresponding to the backlight surface of the LED chip 43 to remove the temporary adhesive glue that may be present, and when the first electrode 431 and the second electrode 432 of the LED chip 43 are electrodes with sufficient thickness, the first electrode 431 and the second electrode 432 can also be ground, so that the side corresponding to the backlight surface of the LED chip 43 of the first adhesive layer 42 and the second adhesive layer 44 is flush with the first electrode 431 and the second electrode 432 of the LED chip 43.

Further, in an embodiment, after the step S24 and before the step S25, the method may further include: the fluorescent film 47 is attached to the LED chip 43, the first adhesive layer 42, and the second adhesive layer 44 on the side corresponding to the light emitting surface of the LED chip 43. In other embodiments, the fluorescent film 47 may be replaced by a quantum dot film, which is not limited in this application.

Further, as shown in fig. 5g, after the corresponding adhesive layer is cut and separated subsequently, the LED package module with the fluorescent film 47 can be obtained.

Referring to fig. 6a to 6m, fig. 6 is a schematic flow chart of a third embodiment of a processing method of an LED package module according to the present application, and fig. 6b to 6m are schematic structural diagrams of an embodiment corresponding to S31 to S36 in fig. 6 a. The processing method of the LED package module in this embodiment is a schematic flow chart of a detailed example of the processing method of the LED package module in fig. 1a, and the embodiment includes the following steps:

s31: a substrate is provided.

In the present embodiment, as shown in fig. 6b, the substrate 51 is specifically provided as a metal substrate 51, and the first conductive pillar 511 and the second conductive pillar 512 are protruded on the metal substrate 51. The LED chip 53 is a front-mounted chip, and further includes a first electrode 531 and a second electrode 532 disposed on the light emitting surface thereof, and the backlight surface thereof is disposed toward the metal substrate 51.

Alternatively, the metal substrate 51 may be a copper-clad plate, a copper plate, or any other reasonable conductive metal plate, so that a predetermined circuit layer can be formed by patterning.

Optionally, the surface of the metal substrate 51 is plated with any reasonable high-reflection metal such as silver, aluminum, etc. to obtain high optical reflection effect.

S32: a patterned first encapsulant layer is formed on the substrate, wherein the first encapsulant layer forms at least one recess region.

Further, as shown in fig. 6c, a first encapsulant layer 52 is formed on the substrate 51, and the first encapsulant layer 52 is patterned to correspondingly form at least one recessed region 521 on the first encapsulant layer 52, so that the first conductive pillars 511 and the second conductive pillars 512 are exposed through the first encapsulant layer 52.

S33: the LED chip is placed in the concave area, wherein the LED chip comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the concave area is gradually reduced in the direction from the light-emitting surface to the backlight surface.

Still further, as shown in fig. 6d, the LED chips 53 provided correspondingly are disposed in each of the recessed areas 521, for example, each of the LED chips 53 is correspondingly adhered to the bottom of each of the recessed areas 521, i.e., the corresponding position of the substrate 51, by an adhesive material such as die bond, a thermal decomposition film, a UV film, etc.

The LED chip 53 specifically includes a light-emitting surface and a backlight surface opposite to the light-emitting surface, and the cross-sectional size of the recessed area 521 in the first encapsulant layer 52 is gradually decreased in a direction from the light-emitting surface of the LED chip 53 to the backlight surface thereof.

Optionally, the accommodating space corresponding to the recessed area 521 may be partially conical, trapezoidal, or any other reasonable shape, which is not limited in this application.

It can be understood that the forming position and number of the recessed areas 521 specifically correspond to the packaging position and number of the LED chips 53 to be packaged in the LED packaging module.

For convenience of understanding, in the present embodiment, the number of the LED chips 53 is 2, and specifically, the front mounted chips are described, it is understood that the cross-sectional size of the recessed area 521 in the first encapsulant layer 52 is gradually reduced in a direction toward the substrate 51, and the light emitting surface of the LED chip 53 is disposed away from the substrate 51.

In other embodiments, the number of the LED chips 53 may also be any reasonable number such as 1, 3, 100, or 1000, or may also be a normal-mount chip, and the structural feature of the recessed region 521 in the first encapsulant layer 52 and the orientation of the light-emitting surface of the LED chip 53 may also be in any other reasonable form, which is determined by actual manufacturing requirements, which is not limited in this application.

S34: and filling a second sealing adhesive layer in the recessed area, wherein the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and the first sealing adhesive layer is used for reflecting light rays generated by the LED chip and transmitted in the second sealing adhesive layer.

Still further, as shown in fig. 6e, the second encapsulant layer 54 is correspondingly filled in the recessed region 521 of the first encapsulant layer 52, and specifically, the second encapsulant layer 54 surrounds the periphery of the LED chip 53 and connects the LED chip 53 and the first encapsulant layer 52.

The first adhesive layer 52 is used for reflecting light generated by the LED chip 53 and transmitted in the second adhesive layer 54, so as to effectively improve the light extraction efficiency of the LED chip 53.

And one side of the second adhesive layer 54 corresponding to the light-emitting surface of each LED chip 53 is aligned with the light-emitting surface.

Alternatively, the second adhesive layer 54 may be made of any reasonable transparent insulating material such as high-refraction transparent adhesive or transparent resin, which is not limited in this application.

S35: and a first lead and a second lead are formed on one side of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer, which corresponds to the light emergent surface, and the first lead and the second lead are respectively and electrically connected with the first conductive column and the first electrode, and the second conductive column and the second electrode.

Specifically, as shown in fig. 6f, a first lead 551 and a second lead 552 are respectively formed on the LED chip 53, the first encapsulant layer 52 and the second encapsulant layer 54 at a side corresponding to the light emitting surface of the LED chip 53, and the first lead 551 is electrically connected to the first conductive pillar 511 and the first electrode 531 of the LED chip 53, and the second lead 552 is electrically connected to the second conductive pillar 512 and the second electrode 532 of the LED chip 53.

S36: patterning the metal substrate to form a first metal pattern and a second metal pattern electrically isolated from each other and electrically connected to the first conductive pillar and the second conductive pillar, respectively.

Further, as shown in fig. 6g, the metal substrate 51 is patterned to form a first metal pattern 513 and a second metal pattern 514 electrically isolated from each other, and the first metal pattern 513 is electrically connected to the first conductive pillar 511, and the second metal pattern 514 is electrically connected to the second conductive pillar 512.

Further, in an embodiment, as shown in fig. 6h, when at least two LED chips 53 are provided, after S36, the method may further include: the first adhesive layer 52 and the substrate 51 are cut and separated corresponding to each LED chip 53 to obtain at least two LED package modules independent from each other, and each LED package module includes only one LED chip 53.

Further, in an embodiment, as shown in fig. 6i, after the step S36, the method may further include: a third adhesive layer 56 is further formed in the gap between the first metal pattern 513 and the second metal pattern, and the third adhesive layer 56 is in contact with the second adhesive layer 54 and is used for reflecting light transmitted in the second adhesive layer 54, so as to improve the light extraction efficiency of the LED chip 53.

In other embodiments, a third adhesive layer 56 may be formed on and between the first metal pattern 513 and the second metal pattern, and the third adhesive layer 56 may be ground or etched to expose the first metal pattern 513 and the second metal pattern.

Further, in an embodiment, as shown in fig. 6j, after the step S36, the method may further include: the fluorescent film 57 is attached to the LED chip 53, the first adhesive layer 52, the second adhesive layer 54, the first lead 551, and the second lead 552 on a side corresponding to the light emitting surface of the LED chip 53. In other embodiments, the fluorescent film 57 may be replaced by a quantum dot film, which is not limited in this application.

Further, as shown in fig. 6k, the metal substrate 51 is patterned to form a first metal pattern 513 and a second metal pattern 514 electrically isolated from each other, and the first metal pattern 513 is electrically connected to the first conductive pillar 511, and the second metal pattern 514 is electrically connected to the second conductive pillar 512.

Further, as shown in fig. 6l, a third adhesive layer 56 is further formed in the gap between the first metal pattern 513 and the second metal pattern, and the third adhesive layer 56 is in contact with the second adhesive layer 54 and is used for reflecting the light transmitted in the second adhesive layer 54, so as to improve the light extraction efficiency of the LED chip 53.

Further, as shown in fig. 6m, the first encapsulant layer 52, the substrate 51 and the fluorescent film 57 are cut and separated corresponding to each LED chip 53, so as to obtain at least two LED package modules independent from each other, and each LED package module includes only one LED chip 53.

Further, in an embodiment, the step S35 may further include: and forming a first lead 551 and a second lead 552 on the LED chip 53, the first adhesive layer 52 and the second adhesive layer 54 on the sides corresponding to the light emergent surfaces by using a magnetron sputtering method or a plating etching method, wherein the widths of the first lead 551 and the second lead 552 are not more than 30 microns.

Optionally, the widths of the first lead 551 and the second lead 552 correspondingly formed by magnetron sputtering or electroplating etching may also be not greater than 20 micrometers, or not greater than 10 micrometers, which is not limited in this application.

Fig. 7 shows a schematic structural diagram of a first embodiment of the LED package module according to the present application. In the present embodiment, the LED package module 60 includes: a first adhesive layer 61, an LED chip 62 and a second adhesive layer 63.

Specifically, at least one recessed area (not shown) is formed on the first encapsulant layer 61, and the LED chip 62 is correspondingly disposed in the recessed area.

The LED chip 62 specifically includes a light-emitting surface (not shown) and a backlight surface (not shown) opposite to the light-emitting surface, and the cross-sectional size of the recessed area gradually decreases in a direction from the light-emitting surface to the backlight surface.

Further, the second adhesive layer 63 is filled in the recessed area, and the second adhesive layer 63 surrounds the periphery of the LED chip 62 and connects the LED chip 62 and the first adhesive layer 61, and a part of light of the LED chip 62 is transmitted in the second adhesive layer 63 and reflected by the first adhesive layer 61.

In an embodiment, the LED chip 62 further includes a first electrode 621 and a second electrode 622 disposed on the backlight surface thereof, and the LED package module 60 further includes a redistribution layer 64 disposed on one side of the LED chip 62, the first sealant layer 61, and the second sealant layer 63 corresponding to the backlight surface of the LED chip 62, and the redistribution layer 64 includes a first wiring pattern 641 and a second wiring pattern 642 electrically connected to the first electrode 621 and the second electrode 622, respectively.

It will be appreciated that the LED chip 62 is embodied as a flip chip.

In an embodiment, the LED package module 60 further includes a third encapsulant layer 65 disposed on one side of the LED chip 62, the first encapsulant layer 61, and the second encapsulant layer 63 corresponding to the backlight surface, wherein the third encapsulant layer 65 contacts the second encapsulant layer 63 and is used for reflecting light transmitted in the second encapsulant layer 63, and a first through hole and a second through hole are formed on the third encapsulant layer 65, wherein the first wiring pattern 641 and the second wiring pattern 642 are electrically connected to the first electrode 621 and the second electrode 622 through the first through hole and the second through hole, respectively.

In an embodiment, the LED package module 60 further includes a fluorescent film 66, and the fluorescent film 66 is specifically attached to one side of the LED chip 62, the first adhesive layer 61, and the second adhesive layer 63 corresponding to the light emitting surface of the LED chip 62, so that the LED package module 60 can display corresponding white light.

Referring to fig. 8-10, fig. 8 is a schematic structural diagram of a second embodiment of an LED package module according to the present application, fig. 9 is a top view of the LED package module in fig. 8, and fig. 10 is a bottom view of the LED package module in fig. 8. In this embodiment, the LED package module 70 includes: first adhesive layer 71, LED chip 72, and second adhesive layer 73.

Specifically, at least one recessed area (not shown) is formed on the first encapsulant layer 71, and the LED chip 72 is correspondingly disposed in the recessed area.

The LED chip 72 specifically includes a light-emitting surface (not shown) and a backlight surface (not shown) opposite to the light-emitting surface, and the cross-sectional size of the recessed area gradually decreases in a direction from the light-emitting surface to the backlight surface.

Further, the second adhesive layer 73 is filled in the recessed area, and the second adhesive layer 73 surrounds the periphery of the LED chip 72 and connects the LED chip 72 and the first adhesive layer 71, and a part of light of the LED chip 72 is transmitted in the second adhesive layer 73 and reflected by the first adhesive layer 71.

In an embodiment, the LED package module 70 further includes a metal substrate 74, a first lead 751 and a second lead 752, wherein a first conductive pillar 741 and a second conductive pillar 742 are disposed on the metal substrate 74 in a protruding manner, and the first conductive pillar 741 and the second conductive pillar 742 are exposed through the first encapsulant layer 71.

The LED chip 72 further includes a first electrode 721 and a second electrode 722 disposed on the light emitting surface, wherein the backlight surface of the LED chip 72 is specifically disposed toward the metal substrate 74, and the first lead 751 and the second lead 752 are disposed on the LED chip 72, the first encapsulant layer 71 and the second encapsulant layer 73 at a side corresponding to the light emitting surface, and are used to electrically connect the first conductive pillar 741 and the first electrode 721, and the second conductive pillar 742 and the second electrode 722, respectively, and the metal substrate 74 is further divided into a first metal pattern 743 and a second metal pattern 744 electrically connected to the first conductive pillar 741 and the second conductive pillar 742, respectively.

It will be appreciated that the LED chip 72 is specifically a front-mounted chip.

In an embodiment, the LED package module 70 further includes a third encapsulant layer 76 disposed in the gap between the first metal pattern 743 and the second metal pattern, and the third encapsulant layer 76 is in contact with the second encapsulant layer 73 and is used for reflecting light in the second encapsulant layer 73, so as to effectively improve the light-emitting efficiency of the LED chip 72.

In an embodiment, the LED package module 70 further includes a fluorescent film 77, and the fluorescent film 77 is specifically attached to one side of the first adhesive layer 71, the second adhesive layer 73, the first lead 751 and the second lead 752 corresponding to the light emitting surface of the LED chip 72, so that the LED package module 70 can display corresponding white light.

The beneficial effect of this application is: different from the situation of the prior art, the manufacturing method of the LED package module of the present application forms the patterned first encapsulant layer on the substrate, wherein the first encapsulant layer forms at least one recessed area to place the LED chip in the recessed area, wherein the LED chip includes the light emitting surface and the backlight surface opposite to the light emitting surface, the cross-sectional size of the recessed area gradually decreases in a direction from the light emitting surface to the backlight surface, so as to fill the second encapsulant layer in the recessed area, wherein the second encapsulant layer surrounds the periphery of the LED chip and is connected to the LED chip and the first encapsulant layer, and the first encapsulant layer is used for reflecting light generated by the LED chip and transmitted in the second encapsulant layer, so as to effectively improve the light emitting efficiency of the LED chip, and by adopting a semiconductor process wiring instead of a conventional gold wire punching manner, the light and thinness of the correspondingly obtained LED package module can also be effectively realized; and a conventional encapsulated bracket and a reflector do not need to be correspondingly arranged, so that the photoelectric conversion efficiency can be effectively improved, the integral manufacturing process is simplified, the production efficiency is improved, and the production cost is reduced.

The above are only embodiments of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent processes performed by the present application and the contents of the attached drawings, which are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims

1. A manufacturing method of an LED packaging module is characterized by comprising the following steps:

providing a substrate;

forming a patterned first sealing adhesive layer on the substrate, wherein the first sealing adhesive layer forms at least one concave region;

placing an LED chip in the recessed area, wherein the LED chip comprises a light-emitting surface and a backlight surface arranged opposite to the light-emitting surface, and the cross section size of the recessed area is gradually reduced in the direction from the light-emitting surface to the backlight surface;

and filling a second adhesive sealing layer in the recessed area, wherein the second adhesive sealing layer surrounds the periphery of the LED chip and is connected with the LED chip and the first adhesive sealing layer, and the first adhesive sealing layer is used for reflecting light rays generated by the LED chip and transmitted in the second adhesive sealing layer.

2. The manufacturing method according to claim 1, wherein the cross-sectional dimension of the recessed region gradually decreases in a direction toward the substrate, and the light-emitting surface of the LED chip is disposed away from the substrate.

3. The method of claim 1, wherein the step of forming the patterned first sealant layer on the substrate comprises:

forming the first sealing adhesive layer on the substrate;

exposing and developing the first adhesive layer to form the recessed region;

baking the exposed and developed first adhesive sealing layer to change the cross section size of the recessed area; or

Forming the first adhesive sealing layer on the substrate;

carrying out mould pressing on the first sealing glue layer to form the concave area; or alternatively

Spraying the first adhesive sealing layer at a fixed point on the substrate to form a crossed grid pattern;

and curing the grid patterns to enable the non-spraying areas surrounded by the grid patterns to serve as the concave areas.

4. The manufacturing method according to claim 1, wherein the substrate is a temporary substrate, the LED chip further includes a first electrode and a second electrode disposed on the backlight surface, wherein the backlight surface is disposed toward the temporary substrate, the manufacturing method further comprising:

removing the temporary substrate;

and forming a rewiring layer on one side of the LED chip, the first adhesive layer and the second adhesive layer, which corresponds to the backlight surface, wherein the rewiring layer comprises a first wiring pattern and a second wiring pattern which are electrically connected with the first electrode and the second electrode respectively.

5. The manufacturing method according to claim 4, characterized by further comprising:

and forming a third sealing adhesive layer on one side of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer corresponding to the backlight surface, wherein the third sealing adhesive layer is in contact with the second sealing adhesive layer and is used for reflecting light transmitted in the second sealing adhesive layer, and the first wiring pattern and the second wiring pattern are at least partially exposed from the third sealing adhesive layer.

6. The manufacturing method according to claim 1, wherein the substrate is a metal substrate, a first conductive pillar and a second conductive pillar are protruded from the metal substrate, and the first conductive pillar and the second conductive pillar are exposed through the first sealant layer; the LED chip further includes a first electrode and a second electrode disposed on the light emitting surface, wherein the backlight surface is disposed toward the metal substrate, and the manufacturing method further includes:

forming a first lead and a second lead on the LED chip, the first adhesive layer and the second adhesive layer at one side corresponding to the light emitting surface, wherein the first lead and the second lead are respectively and electrically connected with the first conductive column and the first electrode, and the second conductive column and the second electrode;

patterning the metal substrate to form a first metal pattern and a second metal pattern electrically isolated from each other and electrically connected to the first conductive pillar and the second conductive pillar, respectively.

7. The manufacturing method according to claim 6, characterized by further comprising:

and further forming a third adhesive layer in a gap between the first metal pattern and the second metal pattern, wherein the third adhesive layer is in contact with the second adhesive layer and is used for reflecting light transmitted in the second adhesive layer.

8. An LED package module, characterized in that, LED package module includes:

the first sealing glue layer forms at least one concave area;

the LED chip is placed in the concave area and comprises a light-emitting surface and a backlight surface which is arranged opposite to the light-emitting surface, and the cross section size of the concave area is gradually reduced in the direction from the light-emitting surface to the backlight surface;

and the second sealing adhesive layer is filled in the recessed area, the second sealing adhesive layer surrounds the periphery of the LED chip and is connected with the LED chip and the first sealing adhesive layer, and partial light of the LED chip is transmitted in the second sealing adhesive layer and is reflected by the first sealing adhesive layer.

9. The LED package module of claim 8, wherein the LED chip further comprises a first electrode and a second electrode disposed on the backlight surface, the LED package module further comprises a rewiring layer disposed on a side of the LED chip, the first sealant layer and the second sealant layer corresponding to the backlight surface, the rewiring layer comprising a first wiring pattern and a second wiring pattern electrically connected to the first electrode and the second electrode, respectively.

10. The LED package module of claim 9, further comprising a third encapsulant layer disposed on a side of the LED chip, the first encapsulant layer, and the second encapsulant layer corresponding to the backlight surface, wherein the third encapsulant layer is in contact with the second encapsulant layer and is configured to reflect light transmitted in the second encapsulant layer, and the third encapsulant layer is formed with a first via and a second via, wherein the first wiring pattern and the second wiring pattern are electrically connected to the first electrode and the second electrode through the first via and the second via, respectively.

11. The LED package module according to claim 8, further comprising a metal substrate, a first lead and a second lead, wherein the metal substrate has a first conductive pillar and a second conductive pillar protruding therefrom, and the first conductive pillar and the second conductive pillar are exposed through the first encapsulant layer; the LED chip further comprises a first electrode and a second electrode which are arranged on the light emitting surface, wherein the backlight surface faces the metal substrate, the first lead and the second lead are arranged on one side, corresponding to the light emitting surface, of the LED chip, the first sealing adhesive layer and the second sealing adhesive layer and are used for being electrically connected with the first conductive column and the first electrode and the second conductive column and the second electrode respectively, and the metal substrate is further divided into a first metal pattern and a second metal pattern which are electrically connected with the first conductive column and the second conductive column respectively.

12. The LED package module of claim 11, further comprising a third encapsulant layer disposed in the gap between the first metal pattern and the second metal pattern, the third encapsulant layer contacting the second encapsulant layer and reflecting light in the second encapsulant layer.