CN115425111A - Manufacturing method of doping structure, solar cell assembly and solar cell system - Google Patents
Manufacturing method of doping structure, solar cell assembly and solar cell system Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract
The application is applicable to the technical field of solar cells, and provides a manufacturing method of a doping structure, a solar cell assembly and a solar cell system. The manufacturing method of the doped structure comprises the following steps: preparing a doping layer on a silicon substrate as a doping source; and doping by using laser to form a doped structure on the silicon substrate. Therefore, the doping layer is used as a doping source and is doped by laser to form a doping structure, so that an additional high-temperature process is not needed, the minority carrier lifetime of the silicon substrate can be prolonged, the process is greatly simplified, and the cost is reduced.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a manufacturing method of a doping structure, a solar cell assembly and a solar cell system.
Background
Solar cell power generation is a sustainable clean energy source that can convert sunlight into electrical energy using the photovoltaic effect of semiconductor p-n junctions.
A p-n junction is typically formed at the interface between the silicon substrate and the doped structure, which is typically formed with an electrode thereon. In the related art, a high-temperature tubular diffusion process is generally adopted to realize the preparation of the doped structure. However, the high temperature diffusion process is not only energy consuming and time consuming, but also can damage the silicon wafer.
Therefore, how to realize the preparation of the doped structure while avoiding the high-temperature process becomes a problem to be solved urgently.
Disclosure of Invention
The application provides a manufacturing method of a doped structure, a solar cell component and a solar cell system, and aims to solve the problem of how to realize the preparation of the doped structure while avoiding a high-temperature process.
In a first aspect, a method for manufacturing a doped structure provided in the present application includes:
preparing a doping layer on a silicon substrate as a doping source;
and doping by using laser, and forming a doping structure on the silicon substrate, wherein the doping structure is an emitter or a base.
Optionally, the doped layer comprises a doped layer of polysilicon and/or a doped layer of amorphous silicon.
Optionally, preparing the doped layer on the silicon substrate comprises:
and preparing the doping layer by adopting at least one of a PECVD process, a PEALD process, an APCVD process, a thermal evaporation process and a magnetron sputtering process.
Optionally, doping with a laser comprises:
carrying out whole-surface doping on one surface of the silicon substrate by utilizing laser;
or, doping with a laser, comprising:
and carrying out local doping on one surface of the silicon substrate by utilizing laser.
Optionally, one side of the silicon substrate includes a plurality of first regions and second regions which are staggered, the doped layer includes a first doped layer and a second doped layer, and the preparing the doped layer on the silicon substrate includes:
preparing the first doped layer in the first region;
preparing the second doped layer in the second region;
doping with a laser, comprising:
doping the first region by using laser, and forming a first doping structure on the silicon substrate corresponding to the first region;
doping the second region by using laser, and forming a second doping structure on the silicon substrate corresponding to the second region;
wherein one of the first doped structure and the second doped structure is an emitter and the other is a base.
Optionally, preparing the first doped layer in the first region includes:
preparing the first doping layer in the first region and the second region;
and removing the first doped layer in the second region.
Optionally, removing the first doped layer of the second region comprises:
and removing the first doping layer in the second region by wet etching.
In a second aspect, the present application provides a solar cell, in which the doped structure of the solar cell is manufactured by using any one of the above methods for manufacturing the doped structure.
In a third aspect, the present application provides a battery module including the solar cell described above.
In a fourth aspect, the present application provides a photovoltaic system including the above-described cell assembly.
According to the manufacturing method of the doping structure, the solar cell component and the system, the doping layer is used as the doping source and is doped by the laser to form the doping structure, so that an additional high-temperature process is not needed, the minority carrier lifetime of the silicon substrate can be prolonged, the process is greatly simplified, and the cost is reduced.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a doped structure formed by a method of fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of a doped structure formed by a method of fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 4 is a schematic flow chart illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of a doped structure formed by a method of fabricating a doped structure according to an embodiment of the present application;
FIG. 6 is a schematic flow chart illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 7 is a schematic view illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 8 is a schematic flow chart illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
FIG. 9 is a schematic view illustrating a method for fabricating a doped structure according to an embodiment of the present disclosure;
description of the main element symbols:
the semiconductor device includes a silicon substrate 101, a first region 110, a second region 120, a doping layer 11, a first doping layer 111, a second doping layer 112, a doping structure 12, a first doping structure 121, and a second doping structure 122.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the application, the doping layer is used as a doping source and is doped by laser to form the doping structure, so that an additional high-temperature process is not needed, the minority carrier lifetime of the silicon substrate can be prolonged, the process is greatly simplified, and the cost is reduced.
Example one
Referring to fig. 1 and fig. 2, a method for fabricating a doped structure 12 according to an embodiment of the present disclosure includes:
step S11: preparing a doping layer 11 on a silicon substrate 101 as a doping source;
step S12: doping is performed by using laser, and a doped structure 12 is formed on the silicon substrate 101, wherein the doped structure 12 is an emitter or a base.
In the method for manufacturing the doped structure 12 according to the embodiment of the present application, the doped layer 11 is used as a doping source and is doped by using laser to form the doped structure 12, so that an additional high temperature process is not required, the minority carrier lifetime of the silicon substrate 101 can be improved, the process is greatly simplified, and the cost is reduced.
Specifically, the silicon substrate 101 is a P-type silicon substrate, the doping layer 11 is an N-type doping layer, the doping structure 12 is an N-type doping structure, and the doping structure 12 is an emitter. As such, a PN junction is formed at an interface between the P-type silicon substrate and the N-type doped layer, so that solar light can be converted into electric energy by a photovoltaic effect.
Further, the doped layer 11 is a boron doped layer, and the doped structure 12 is a boron doped structure. It is understood that in other embodiments, the doped layer 11 may be an aluminum doped layer, and the doped structure 12 may be an aluminum doped structure; the doped layer 11 can also be a gallium doped layer, and the doped structure 12 is a gallium doped structure; alternatively, the doped layer 11 may be an indium doped layer and the doped structure 12 may be an indium doped structure.
It is understood that in other embodiments, the silicon substrate 101 may be an N-type silicon substrate, the doped layer 11 may be a P-type doped layer, the doped structure 12 may be a P-type doped structure, and the doped structure 12 may be an emitter. It is understood that in other embodiments, the doped layer 11 may be an arsenic doped layer, and the doped structure 12 may be an arsenic doped structure; the doped layer 11 may be an antimony doped layer, and the doped structure 12 may be an antimony doped structure.
It is understood that in other embodiments, the silicon substrate 101 is a P-type silicon substrate, the doped layer 11 is a P-type doped layer, the doped structure 12 is a P-type doped structure, and the doped structure 12 is a base.
It is understood that in other embodiments, the silicon substrate 101 is an N-type silicon substrate, the doped layer 11 is an N-type doped layer, the doped structure 12 is an N-type doped structure, and the doped structure 12 is a base.
Specifically, in step S11, the number of doped layers 11 is one. It is understood that in other embodiments, the number of doped layers 11 may be 2, 3, 4, or other numbers. In the case where the number of doped layers 11 is a plurality of layers, the types of doped layers 11 may be the same or different.
Specifically, in step S11, the doped layer 11 may be prepared over the entire surface of the silicon substrate 101. In other words, the projection of the doped layer 11 on the silicon substrate 101 completely overlaps the silicon substrate 101, and the doped layer 11 is continuously distributed on the silicon substrate 101. Therefore, the distribution area of the doping source is large, and the subsequent doping by using laser is facilitated. Moreover, the doping layer 11 is prepared on the whole surface without a mask, which is beneficial to improving the manufacturing efficiency.
It is understood that in other embodiments, the doped layer 11 may be formed in a partial region of the silicon substrate 101. In other words, the doping layer 11 is formed with hollow regions intermittently distributed on the silicon substrate 101.
Specifically, in step S11, the thickness of the doped layer 11 is 5nm-500 μm. For example, 5nm, 10nm, 100nm, 1 μm, 100 μm, 200 μm, 400 μm, 500 μm. Therefore, the thickness of the doping layer 11 is in a proper range, which can avoid that the doping layer cannot be used as a doping source to form a doping structure after laser due to too small thickness, and can also avoid material waste due to too large thickness.
It can be understood that the doped layer 11 formed by spin-coating the slurry is thick, and the thickness is in the order of micrometers; the doped layer 11 deposited by the vacuum equipment is thin and has a thickness of nanometer.
Specifically, in step S12, the entire region of the silicon substrate 101 may be doped with laser light, or a partial region of the silicon substrate 101 may be doped with laser light. It will be appreciated that the region of the doped structure 12 may be controlled by controlling the region of the laser doping. The specific region of laser doping is not limited herein.
Specifically, in step S12, the laser light may be violet light or green light. Further, the wavelength of the laser light may be 390nm to 500nm. For example, 390nm, 400nm, 450nm, 480nm, 500nm. Therefore, the wavelength of the laser is in a proper range, and poor doping effect caused by over-small or over-large wavelength is avoided.
Specifically, before step S11, the silicon substrate 101 may be cleaned and textured. Therefore, a suede is formed, the reflection of sunlight is reduced, and the photoelectric conversion rate of the cell is improved.
Specifically, after step S12, the doped layer 11 may be removed. Further, the doped layer 11 may be removed by wet etching. In this way, the doping layer 11 can be prevented from adversely affecting the subsequent steps of manufacturing the solar cell.
Specifically, after step S12, a passivation layer and a circuit may also be fabricated. Thus, the solar cell is realized.
Further, a surface passivation layer can be fabricated on both sides. The surface passivation layer comprises at least one of a silicon oxide layer, a silicon nitride layer and a silicon oxynitride layer. The number of surface passivation layers may be 1, 2, 3 or other numbers. The specific location distribution, specific type and specific number of surface passivation layers are not limited herein.
Further, the circuit can be fabricated using a screen printing process. Therefore, the efficiency and the precision are higher, and the quality of the solar cell is favorably improved. It is understood that in other embodiments, sputtering, electroplating, etc. processes may be used to form the circuit.
In the present embodiment, the doped structure 12 is formed on the front surface of the silicon substrate 101, and the first back surface doped layer 11, the back surface passivation layer and the second back surface doped layer 11 are sequentially stacked on the back surface of the silicon substrate 101. Thus, forming the TOPCon structure on the back surface of the silicon substrate 101 is advantageous for improving the photoelectric conversion efficiency of the cell.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
Example two
In some alternative embodiments, doped layer 11 comprises a doped layer of polysilicon and/or a doped layer of amorphous silicon.
Therefore, the polycrystalline silicon doped layer and/or the amorphous silicon doped layer are/is used as doping sources, so that the subsequent laser doping effect is better.
Specifically, the dopable layer 11 includes a polysilicon doped layer; the dopable layer 11 comprises an amorphous silicon doped layer; the dopable layer 11 includes a polysilicon doped layer and an amorphous silicon doped layer.
Specifically, the silicon substrate 101 is a P-type silicon substrate 101, and the doped layer 11 is a boron-doped polysilicon layer and/or a boron-doped amorphous silicon layer. It is understood that in other embodiments, the dopable layer 11 is an aluminum-doped polysilicon layer and/or an aluminum-doped amorphous silicon layer; the adulterable layer 11 is a gallium-doped polycrystalline silicon layer and/or a gallium-doped amorphous silicon layer; the dopable layer 11 is an indium-doped polysilicon layer and/or an indium-doped amorphous silicon layer.
It is understood that in other embodiments, the silicon substrate 101 is an N-type silicon substrate, and the doped layer 11 is a phosphorus-doped polysilicon layer and/or a phosphorus-doped amorphous silicon layer; the adulterable layer 11 is an arsenic-doped polysilicon layer and/or an arsenic-doped amorphous silicon layer; the dopable layer 11 is an antimony-doped polysilicon layer and/or an antimony-doped amorphous silicon layer.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
EXAMPLE III
In some optional embodiments, step S11 comprises:
the doping layer 11 is prepared by using at least one of a PECVD process, a PEALD process, an APCVD process, a thermal evaporation process, and a magnetron sputtering process.
In other words, one, two, three, four, or all of the PECVD process, the PEALD process, the APCVD process, the thermal evaporation process, and the magnetron sputtering process may be used to fabricate the doping layer 11.
Thus, the doped layer 11 can be prepared in various ways, and can be adapted to more application scenarios.
Specifically, the PECVD process is a Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical Vapor Deposition). The basic temperature required by the PECVD process is low, so that the silicon wafer can be prevented from being damaged by high temperature. Moreover, the PECVD process has good film forming quality, and is beneficial to improving the quality of the doping layer 11, so that the subsequent laser doping effect is better.
Specifically, the PEALD process is a Plasma Enhanced Atomic Layer Deposition (Plasma Enhanced Atomic Layer Deposition) process, and the thickness of the doped Layer 11 can be precisely controlled, so that the doped Layer 11 has good uniformity, and the subsequent laser doping effect can be improved.
Specifically, the APCVD process is Atmospheric Pressure Chemical Vapor Deposition (Atmospheric Pressure Chemical Vapor Deposition), has a fast reaction speed, and can improve the manufacturing efficiency of the doping layer 11, thereby improving the manufacturing efficiency of the doping structure 12.
Specifically, the thermal evaporation process is also an evaporation process, so that the purity and the compactness of the doped layer 11 are higher, and the subsequent laser doping effect is favorably improved.
Specifically, the magnetron sputtering process can manufacture the doping layer 11 in a large area, and the adhesion of the doping layer 11 is stronger, which is beneficial to improving the subsequent laser doping effect.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
Example four
Referring to fig. 2, in some alternative embodiments, step S11 includes:
one surface of the silicon substrate 101 is doped entirely with laser light.
Thus, the entire doped structure 12 can be formed, and the entire deposited doped layer 11 is not wasted, which is beneficial to improving the photoelectric conversion efficiency.
Referring to fig. 3, in some alternative embodiments, step S11 includes:
one side of the silicon substrate 101 is locally doped with a laser.
Thus, the local doped structure 12 can be formed, the flexibility of the position of the doped structure 12 can be improved by the laser doped region, and the position of the doped structure 12 can be adjusted after the doped layer 11 is deposited and during laser doping.
Specifically, one side of the silicon substrate 101 may be locally doped with a laser according to a predetermined pattern. In this manner, the patterned doped structure 12 may be prepared by patterning the localized doping by laser patterning.
For further explanation and explanation of the embodiment, reference may be made to other parts of the text, and in order to avoid redundancy, further description is omitted here.
EXAMPLE five
Referring to fig. 4 and 5, in some alternative embodiments, one side of silicon substrate 101 includes a plurality of first regions 110 and second regions 120, which are staggered, doped layer 11 includes first doped layer 111 and second doped layer 112, and step S11 includes:
step S111: preparing a first doped layer 111 in the first region 110;
step S112: preparing a second doped layer 112 in the second region 120;
step S12 includes:
step S121: doping the first region 110 by using laser, and forming a first doping structure 121 on the silicon substrate 101 corresponding to the first region 110;
step S121: doping the second region 120 by using laser, and forming a second doping structure 122 on the silicon substrate 101 corresponding to the second region 120;
one of the first doping structure 121 or the second doping structure 122 is an emitter, and the other is a base.
In this way, the first doping structure 121 and the second doping structure 122 are formed alternately on one side of the silicon substrate 101. It is understood that one of the first doping structure 121 and the second doping structure 122 is an emitter, and the other is a base. For example, in a P-type cell with a P-type silicon wafer as a substrate, the P-doped region is a base, and the N-doped region is an emitter. For another example, in an N-type cell with an N-type silicon wafer as a substrate, the N-doped region is a base, and the P-doped region is an emitter.
Specifically, the phrase "one surface of the silicon substrate 101 includes a plurality of first regions 110 and second regions 120 which are staggered" means that the second regions 120 are formed between two adjacent first regions 110 and the first regions 110 are formed between two adjacent second regions 120 on the one surface of the silicon substrate 101.
Note that only a partial structure of the silicon substrate 101 is shown in fig. 5, and only two adjacent first regions 110 and second regions 120 are shown, but this does not represent a limitation on the number of the first regions 110 and second regions 120.
Specifically, one of the first and second doped layers 111 and 112 is a P-type doped layer, and the other is an N-type doped layer. Further, the first doped layer 111 and the second doped layer 112 contact each other. Therefore, the use of masks is reduced, the manufacturing efficiency is improved, and the patterning can be realized by subsequent laser. It is understood that in other embodiments, first doped layer 111 and second doped layer 112 may be formed with a gap. In this way, the first doping structure 121 and the second doping structure 122 formed later are ensured to be spaced by the silicon substrate 101.
Specifically, in step S111, the first doping layer 111 may be completely prepared in the first region 110, or the first doping layer 111 may be locally prepared in the first region 110.
Specifically, in step S112, the second doped layer 112 may be completely prepared in the second region 120, or the second doped layer 112 may be locally prepared in the second region 120.
Specifically, in step S121, the first region 110 may be locally doped by using laser, and a first doping structure 121 is formed in a partial region of the silicon substrate 101 corresponding to the first region 110; in step S122, the second region 120 may be locally doped by using laser, and a second doping structure 122 is formed in a partial region of the silicon substrate 101 corresponding to the second region 120. Thus, the first doping structure 121 and the second doping structure 122 are separated by the silicon substrate 101, and short circuit is avoided.
It is understood that, in other embodiments, the first region 110 may also be fully doped by using a laser, and the first doping structure 121 is formed in the entire region of the silicon substrate 101 corresponding to the first region 110; in step S122, the second region 120 may be locally doped by using laser, and a second doping structure 122 is formed in a partial region of the silicon substrate 101 corresponding to the second region 120. As such, by locally doping the second region 120, a space is formed between the first doping structure 121 and the second doping structure 122.
In other embodiments, the first region 110 may also be locally doped by using laser, and the first doping structure 121 is formed in a partial region of the silicon substrate 101 corresponding to the first region 110; in step S122, the second region 120 may be fully doped by using laser, and a second doping structure 122 is formed in the entire region of the silicon substrate 101 corresponding to the second region 120. As such, by locally doping the first region 110, a space is formed between the first doping structure 121 and the second doping structure 122.
Note that step S111 and step S112 may be performed simultaneously, or step S111 may be performed first, and then step S112 may be performed. Step S121 and step S122 may be performed simultaneously, or step S121 may be performed first, and then step S122 may be performed. The steps S111 and S121 may be executed first, and then the steps S112 and S122 may be executed, or the steps S112 and S122 may be executed first, and then the steps S111 and S121 may be executed. The specific order of the steps is not limited herein.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
EXAMPLE six
Referring to fig. 6 and 7, in some alternative embodiments, step S111 includes:
step S1111: preparing a first doping layer 111 in the first region 110 and the second region 120;
step S1112: the first doping layer 111 of the second region 120 is removed.
Thus, the first doping layer 111 is prepared in the first region 110 by preparing the first doping layer 111 on the whole surface and removing the first doping layer 111 in the second region 120. Moreover, patterning of low-cost PN regions of back-contact solar cells can also be achieved.
It is understood that in other embodiments, the first doping layer 111 may be prepared by covering the second region 120 with a mask, so as to prepare the first doping layer 111 in the first region 110.
Referring to fig. 8 and 9, step S112 includes:
step S1121: preparing a second doped layer 112 in the first region 110 and the second region 120;
step S1122: the second doped layer 112 of the first region 110 is removed.
Thus, the second doped layer 112 is prepared in the second region 120 by preparing the second doped layer 112 over the entire surface and removing the second doped layer 112 in the first region 110. Moreover, patterning of low-cost PN regions of back-contact solar cells can also be achieved.
It is understood that in other embodiments, the second doped layer 112 may be prepared by covering the first region 110 with a mask and then preparing the second doped layer 112, thereby realizing the preparation of the second doped layer 112 in the second region 120.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
EXAMPLE seven
In some alternative embodiments, step S1112 includes:
the first doping layer 111 of the second region 120 is removed using wet etching.
Thus, the first doping layer 111 in the second region 120 is removed efficiently, which is beneficial to improving the manufacturing efficiency. Moreover, the temperature required by wet etching is low, and the silicon wafer cannot be damaged due to high temperature.
Specifically, the first doped layer 111 may be removed using an acid solution. The acid liquid is, for example, hydrofluoric acid. In this manner, the first doping layer 111 can be removed efficiently.
Further, the concentration of the acid liquor is 0.1% -50%. For example, 0.1%, 0.5%, 1%, 10%, 25%, 40%, 50%. Therefore, the concentration of the acid solution is in a proper range, so that poor effect of removing the first doping layer 111 caused by too low concentration of the acid solution can be avoided, and silicon wafer damage caused by too high concentration of the acid solution can also be avoided.
It is understood that in other embodiments, the first doped layer 111 of the second region 120 may also be removed by using a patterned laser. Specifically, the parameters of the laser for removing the first doping layer 111 may be the same as those of the laser for laser opening. Further, the wavelength of the laser was 532nm, the pulse width was 50ns, and the frequency was 50000Hz.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
Example eight
In the solar cell of the embodiment of the present application, the doping structure 12 is manufactured by using the method for manufacturing the doping structure 12 of any one of the first to seventh embodiments.
In the solar cell of the embodiment of the application, since the doping layer 11 is used as a doping source and is doped by using laser to form the doping structure 12, an additional high-temperature process is not required, the minority carrier lifetime of the silicon substrate 101 can be prolonged, the process is greatly simplified, and the cost is reduced.
For further explanation and explanation of the embodiment, reference may be made to other parts of the text, and in order to avoid redundancy, further description is omitted here.
Example nine
The battery module of the embodiment of the present application includes the solar cell of the eighth embodiment.
In the cell module of the embodiment of the application, the doping layer 11 is used as a doping source and is doped by laser to form the doping structure 12, so that an additional high-temperature process is not required, the minority carrier lifetime of the silicon substrate 101 can be prolonged, the process is greatly simplified, and the cost is reduced.
In this embodiment, the solar cells in the cell module may be sequentially connected in series to form a cell string, so as to implement a series bus output of current, for example, the series connection of the cells may be implemented by providing solder strips (bus bars, interconnection bars), a conductive back plate, and the like.
It is understood that in such embodiments, the cell assembly may further include a metal frame, a backsheet, a photovoltaic glass, and an adhesive film. The adhesive film can be filled between the front side and the back side of the solar cell, the photovoltaic glass, the adjacent cell pieces and the like, and can be transparent colloid with good light transmittance and aging resistance as a filler, for example, the adhesive film can be an EVA adhesive film or a POE adhesive film, which can be selected according to actual conditions without limitation.
The photovoltaic glass can be coated on the adhesive film on the front surface of the solar cell, and the photovoltaic glass can be ultra-white glass which has high light transmittance, high transparency and excellent physical, mechanical and optical properties, for example, the light transmittance of the ultra-white glass can reach more than 92%, and the ultra-white glass can protect the solar cell under the condition that the efficiency of the solar cell is not influenced as much as possible. Meanwhile, the adhesive film can bond the photovoltaic glass and the solar cell together, and the solar cell can be sealed, insulated, waterproof and moistureproof due to the adhesive film.
The back plate can be attached to an adhesive film on the back of the solar cell, can protect and support the solar cell, has reliable insulativity, water resistance and aging resistance, can be selected in multiple ways, can be generally toughened glass, organic glass, an aluminum alloy TPT composite adhesive film and the like, can be specifically arranged according to specific conditions, and is not limited herein. The whole body composed of the back plate, the solar cell, the adhesive film and the photovoltaic glass can be arranged on the metal frame, the metal frame is used as a main external supporting structure of the whole cell module, and stable supporting and installation can be carried out on the cell module, for example, the cell module can be installed at a position required to be installed through the metal frame.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
Example ten
The photovoltaic system of this application embodiment includes the battery module of example nine.
In the photovoltaic system of the embodiment of the application, the doping layer 11 is used as a doping source and is doped by laser to form the doping structure 12, so that an additional high-temperature process is not required, the minority carrier lifetime of the silicon substrate 101 can be prolonged, the process is greatly simplified, and the cost is reduced.
In this embodiment, the photovoltaic system can be applied to photovoltaic power stations, such as ground power stations, roof power stations, water surface power stations, etc., and can also be applied to devices or apparatuses that generate electricity by using solar energy, such as user solar power sources, solar street lamps, solar cars, solar buildings, etc. Of course, it is understood that the application scenario of the photovoltaic system is not limited thereto, that is, the photovoltaic system can be applied in all fields requiring solar energy for power generation. Taking a photovoltaic power generation system network as an example, a photovoltaic system may include a photovoltaic array, a combiner box and an inverter, the photovoltaic array may be an array combination of a plurality of battery modules, for example, the plurality of battery modules may constitute a plurality of photovoltaic arrays, the photovoltaic array is connected to the combiner box, the combiner box may combine currents generated by the photovoltaic array, and the combined currents are converted into alternating currents required by a utility grid through the inverter and then are connected to the utility grid to realize solar power supply.
For further explanation and explanation of this embodiment, reference may be made to other parts of the present document, and further explanation is omitted here to avoid redundancy.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed. Furthermore, the particular features, structures, materials, or characteristics described in connection with the embodiments or examples disclosed herein may be combined in any suitable manner in any one or more of the embodiments or examples.
Claims (10)
1. A method for fabricating a doped structure, comprising:
preparing a doping layer on a silicon substrate as a doping source;
and doping by using laser, and forming a doping structure on the silicon substrate, wherein the doping structure is an emitter or a base.
2. The method of claim 1, wherein the doped layer comprises a doped layer of polysilicon and/or a doped layer of amorphous silicon.
3. The method of claim 1, wherein preparing the doped layer on the silicon substrate comprises:
and preparing the doping layer by adopting at least one of a PECVD process, a PEALD process, an APCVD process, a thermal evaporation process and a magnetron sputtering process.
4. The method of claim 1, wherein the doping with a laser comprises:
carrying out whole-surface doping on one surface of the silicon substrate by utilizing laser;
or, doping with a laser, comprising:
and carrying out local doping on one surface of the silicon substrate by utilizing laser.
5. The method of claim 1, wherein the doped layer comprises a first doped layer and a second doped layer, and the preparing the doped layer on the silicon substrate comprises:
preparing the first doped layer in the first region;
preparing the second doped layer in the second region;
doping with a laser, comprising:
doping the first region by using laser, and forming a first doping structure on the silicon substrate corresponding to the first region;
doping the second region by using laser, and forming a second doping structure on the silicon substrate corresponding to the second region;
wherein one of the first doped structure and the second doped structure is an emitter and the other is a base.
6. The method of claim 5, wherein the preparing the first doped layer in the first region comprises:
preparing the first doping layer in the first region and the second region;
and removing the first doped layer in the second region.
7. The method of claim 6, wherein removing the first doped layer in the second region comprises:
and removing the first doping layer in the second region by wet etching.
8. A solar cell, characterized in that the doped structure of the solar cell is manufactured by the method for manufacturing the doped structure according to any one of claims 1 to 7.
9. A battery module comprising the solar cell of claim 8.
10. A photovoltaic system comprising the cell assembly of claim 9.
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