CN115417677A - Method for preparing silicon nitride ceramic substrate isolation layer by silicon nitride ultrathin cast film belt - Google Patents
Method for preparing silicon nitride ceramic substrate isolation layer by silicon nitride ultrathin cast film belt Download PDFInfo
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- CN115417677A CN115417677A CN202210935444.9A CN202210935444A CN115417677A CN 115417677 A CN115417677 A CN 115417677A CN 202210935444 A CN202210935444 A CN 202210935444A CN 115417677 A CN115417677 A CN 115417677A
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 88
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000002955 isolation Methods 0.000 title claims abstract description 54
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000843 powder Substances 0.000 claims abstract description 50
- 238000005266 casting Methods 0.000 claims abstract description 29
- 239000002002 slurry Substances 0.000 claims abstract description 24
- 238000010345 tape casting Methods 0.000 claims abstract description 17
- 239000000725 suspension Substances 0.000 claims abstract description 13
- 239000002270 dispersing agent Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 11
- 239000011230 binding agent Substances 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 6
- 150000002576 ketones Chemical class 0.000 claims description 5
- 239000012046 mixed solvent Substances 0.000 claims description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract description 22
- 238000005245 sintering Methods 0.000 abstract description 14
- 238000005054 agglomeration Methods 0.000 abstract description 11
- 230000002776 aggregation Effects 0.000 abstract description 11
- 238000004062 sedimentation Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract description 5
- 229910052582 BN Inorganic materials 0.000 description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 14
- 230000009466 transformation Effects 0.000 description 4
- 241000519995 Stachys sylvatica Species 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6025—Tape casting, e.g. with a doctor blade
Abstract
The invention discloses a method for preparing a silicon nitride ceramic substrate isolation layer by a silicon nitride ultrathin tape-casting film strip, which comprises the following steps: s1, mixing silicon nitride isolation powder with a dispersant, a solvent and a binder according to a mass ratio of 50 to 60; s2, defoaming the prepared slurry by using a vacuum defoaming machine to make the viscosity reach 3#6r:1000 to 2000mpa.s; s3, feeding the defoamed slurry into a casting machine for casting to prepare a film with the thickness of 10 to 50 mu m; the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin tape casting film strip comprises the steps of mixing silicon nitride isolation powder, a dispersing agent, a solvent and a binder according to mass percentage to prepare a film, and then covering one side of a substrate with the film; the invention can prevent the phenomena of sedimentation, agglomeration and uneven spraying in the spraying process when the release agent is prepared from the isolation powder in a suspension state, and can also prevent the isolation powder from generating chemical reaction with the substrate during high-temperature sintering.
Description
Technical Field
The invention belongs to the related technical field of preparation methods of ceramic substrate isolation layers, and particularly relates to a method for preparing a silicon nitride ceramic substrate isolation layer by a silicon nitride ultrathin tape casting film, which can prevent the phenomena of sedimentation, agglomeration and uneven spraying in the spraying process when isolation powder in a suspension state is prepared into a release agent, and can prevent the isolation powder from chemically reacting with a substrate during high-temperature sintering.
Background
At present, when boron nitride isolation powder in a suspension state is prepared into a release agent, the phenomena of sedimentation, agglomeration and uneven spraying can occur in the spraying process, because the boron nitride isolation powder and a solvent are prepared into a suspension, after the preparation is finished, the boron nitride isolation powder has poor compatibility with the solvent due to large specific gravity and thick particles (D50: 7-20 mu m), and the phenomenon of sedimentation is caused due to overlong storage time; when the boron nitride powder is transferred into a spraying tank, the boron nitride powder is settled, so that the boron nitride molecules are agglomerated, when the boron nitride powder is sprayed to two sides of a substrate, the spraying is uneven, and the boron nitride powder reacts on a product, namely, a sticking phenomenon occurs at the position which is not sprayed/the position with small spraying amount on the substrate, so that the yield is reduced, and the productivity is influenced.
Specifically, when the spraying amount of the boron nitride isolation powder is too small, the product can have adhesion, the yield is reduced, and the productivity is influenced; when the spraying amount of the boron nitride isolation powder is too much, the isolation powder forms a black spot and a light spot phenomenon due to the influence of self agglomeration and interparticle agglomeration, so that the appearance of the product is poor; the isolation powder agglomeration causes uneven heating of the product, and other procedures may need to be introduced to treat the product, so that the operation is troublesome and the aging is reduced.
The prior art has the following defects: (1) because the boron nitride isolation powder particles are easy to settle, the prepared isolation suspension liquid can be agglomerated and sprayed unevenly in the spraying process; (2) the spraying amount of the boron nitride isolation powder is not controllable, and the product is stuck due to too small spraying amount, so that the yield of the product is reduced, and the productivity is influenced; the appearance of the product is poor due to the phenomenon that the spraying amount is too high and black spots are formed by agglomeration of the spraying amount; the isolation powder agglomerates lead to uneven heating of the product, other device jigs can be additionally introduced to treat the product, the operation is troublesome, and the time efficiency is reduced.
In addition, when the substrate is a silicon nitride ceramic substrate, the boron nitride isolation powder is oxidized at a high temperature higher than 1200 ℃, and meanwhile, the boron nitride isolation powder and the substrate are chemically reacted, so that a reacted product is accumulated on the surface and inside of a product to form white spots, the appearance of the product is affected, and the yield is reduced.
Therefore, a method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin tape casting film belt is developed, wherein the phenomena of sedimentation, agglomeration and uneven spraying can be prevented in the spraying process when the isolating powder in a suspension state is prepared into the releasing agent, and the isolating powder and the substrate can be prevented from generating chemical reaction in high-temperature sintering.
Disclosure of Invention
The invention aims to provide a method for preparing a silicon nitride ceramic substrate isolating layer by a silicon nitride ultrathin tape casting film, which can prevent the phenomena of sedimentation, agglomeration and uneven spraying in the spraying process when isolating powder in a suspension state is prepared into a release agent, and can also prevent the isolating powder from chemically reacting with a substrate during high-temperature sintering.
In order to achieve the purpose, the invention provides the following technical scheme: a method for preparing a silicon nitride ceramic substrate isolation layer by a silicon nitride ultrathin tape casting film strip comprises the following steps:
s1, mixing silicon nitride isolation powder with a dispersant, a solvent and a binder according to a mass ratio of 50 to 60;
s2, defoaming the prepared slurry by using a vacuum defoaming machine to make the viscosity reach 3#6r:1000 to 2000mpa.s;
and S3, casting the defoamed slurry in a casting machine to prepare a film with the thickness of 10 to 50 mu m.
Preferably, the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin tape casting film comprises the following steps: AKM0531 or D1001.
Preferably, the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin casting film strip comprises the following steps: benzene + alcohol or alcohol + ketone mixed solvent system.
Preferably, the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin casting film strip comprises the following steps: xylene + n-butanol or ethanol + butanone.
Preferably, the method for preparing the silicon nitride ceramic substrate isolation layer by using the silicon nitride ultrathin casting film belt comprises the following steps:
s1, isolating silicon nitride powder, a dispersing agent and a mixed solvent system of benzene + alcohol or alcohol + ketone according to a mass fraction ratio of 50:1:100, mixing the materials together, performing ball milling for 30min to obtain a suspension, adding 55% of a binder into the suspension according to mass percent, and continuing ball milling for 1-2H until the slurry is uniformly mixed;
s2, discharging the slurry, and testing the discharged viscosity of the slurry to be 3#6r: and (2) 500 to 700mpa.s, then placing the mixture in a vacuum defoaming machine for defoaming, wherein the vacuum degree of the vacuum defoaming machine is-0.01 MPa, the slurry temperature is 30 to 50 ℃, and the defoaming viscosity is 3#6r:1000 to 2000mpa.s;
s3, casting the defoamed slurry, wherein the machine speed of the casting machine is as follows: 0.1 to 0.5m/min, machine temperature of the casting machine: 25 to 30 ℃, casting knife height of a casting machine: 0.15 to 0.50mm; a film having a thickness of 10 to 50 μm was obtained.
Compared with the prior art, the invention provides a method for preparing a silicon nitride ceramic substrate isolation layer by using a silicon nitride ultrathin tape-casting film strip, which has the following beneficial effects:
the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin tape casting film strip comprises the steps of mixing silicon nitride isolation powder, a dispersing agent, a solvent and a binder according to mass percentage to prepare a film, coating the film on one side of a ceramic substrate, and then carrying out glue removal and sintering on a product with a stacked structure; it has the following advantages: 1. the silicon nitride isolating powder film can be uniformly coated on the surface of the product, so that the problems of sedimentation and agglomeration of the isolating powder are avoided; 2. the using amount of the silicon nitride isolating powder is accurate and controllable, so that the problems that the yield is reduced due to the fact that the product is stuck and black spots and light spots of the product are reduced due to uneven spraying, and the surface of the product needs to be cleaned to reduce the time efficiency are avoided; 3. during high-temperature sintering, because the silicon nitride isolation powder does not undergo oxidation reaction at high temperature, and the silicon nitride isolation powder and the silicon nitride ceramic substrate are composed of the same components and chemical elements, the silicon nitride isolation powder and the silicon nitride ceramic substrate do not undergo chemical reaction, and only alpha → beta phase transformation reaction occurs, and the phase transformation action can increase phase-to-phase bonding between the silicon nitride isolation powder and the silicon nitride ceramic substrate, so that the mechanical property of the product can be improved, and other impurities such as white spots and the like can not be generated on the surface and in the silicon nitride ceramic substrate.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention without limiting the invention in which:
FIG. 1 is a process flow chart of a method for preparing a silicon nitride ceramic substrate isolation layer by using a silicon nitride ultrathin tape casting film strip and an application thereof;
FIG. 2 is a schematic diagram of an application structure of a silicon nitride ceramic substrate isolation layer produced by a method for preparing the silicon nitride ceramic substrate isolation layer by using a silicon nitride ultrathin tape casting film strip according to the invention;
FIG. 3 is a parameter table of a sintering curve when the silicon nitride ceramic substrate isolation layer produced by the method for preparing the silicon nitride ceramic substrate isolation layer by the silicon nitride ultrathin tape casting film tape provided by the invention is applied;
in the figure: 1. a film; 2. a silicon nitride ceramic substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1-3, the present invention provides a technical solution: a method for preparing a silicon nitride ceramic substrate isolation layer by a silicon nitride ultrathin tape casting film strip comprises the following steps:
s1, mixing silicon nitride isolation powder with a dispersing agent, a solvent and a binder according to a mass ratio of 50: 30 to 40r/min, and preparing into slurry;
s2, defoaming the prepared slurry by using a vacuum defoaming machine, wherein the vacuum degree of the vacuum defoaming machine is-0.01 MPa, the slurry temperature is 30-50 ℃, and the viscosity reaches 3#6r:1000 to 2000mpa.s;3# 6r: spindle No. 3, rotational speed No. 6 of the viscometer;
s3, feeding the defoamed slurry into a casting machine for casting, wherein the machine speed of the casting machine is as follows: 0.1 to 0.5m/min, machine temperature of the casting machine: 25 to 30 ℃, casting knife height of a casting machine: 0.15 to 0.50mm; preparing a film 1 with the thickness of 10 to 50 mu m;
s4, cutting the cast film to the same size as the substrate, covering one side of the substrate, and stacking, removing the adhesive and sintering; the substrate is a silicon nitride ceramic substrate 2; stacking as shown in figure 2; sintering according to the sintering curve parameters shown in the attached figure 3;
and S5, observing the appearance of the sintered product.
Example two
Referring to fig. 1-3, the present invention provides a technical solution: a method for preparing a silicon nitride ceramic substrate isolation layer by a silicon nitride ultrathin tape casting film strip comprises the following steps:
s1, isolating silicon nitride powder and a dispersing agent: AKM0531 or D1001, benzene, alcohol and ketone mixed solvent system, such as dimethylbenzene + n-butanol or ethanol + butanone according to the mass fraction ratio of 50:1:100, mixing the materials together, performing ball milling for 30min to obtain a suspension, adding 55% of a binder into the suspension according to mass percent, and continuing ball milling for 1-2H until the slurry is uniformly mixed;
s2, discharging the slurry, and testing the discharged viscosity of the slurry to be 3#6r:500 to 700mpa.s, then placing the mixture in a vacuum defoaming machine for defoaming until the defoaming viscosity reaches 3#6r:1000 to 2000mpa.s;
s3, carrying out tape casting on the defoamed slurry to obtain a film 1 with the thickness of 10 to 50 micrometers; the forming process for preparing the film 1 is simple, and the operation is simple; the forming technology is mature, and the using amount of the silicon nitride isolation powder is accurate and controllable;
s4, cutting the film 1, keeping the cutting size consistent with that of the substrate, finally covering the film 1 on one side of the substrate, enabling the using amount of isolation powder to achieve the purpose of accurate and controllable, and then carrying out glue discharging and sintering on a product with a stacked structure; the substrate is a silicon nitride ceramic substrate 2; stacking as shown in figure 2; sintering according to the sintering curve parameters shown in the attached figure 3;
and S5, observing the appearance of the sintered product.
Compared with the prior art, the invention has the following beneficial effects:
the method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin tape casting film strip comprises the steps of mixing silicon nitride isolating powder, a dispersing agent, a solvent and a binder according to mass percentage to prepare a film 1, covering the film 1 on one side of a ceramic substrate 2, and then carrying out glue removal and sintering on a product with a stacked structure; it has the following advantages: 1. the silicon nitride isolating powder film can be uniformly coated on the surface of the product, so that the problems of sedimentation and agglomeration of the isolating powder are avoided; 2. the using amount of the silicon nitride isolating powder is accurate and controllable, so that the problems that the yield is reduced due to the fact that the product is stuck and black spots and light spots of the product are reduced due to uneven spraying and the surface of the product needs to be cleaned, and the aging is reduced are solved; 3. when the silicon nitride isolation powder is sintered at high temperature, oxidation reaction cannot occur at high temperature; in addition, the silicon nitride isolation powder and the silicon nitride ceramic substrate 2 are made of the same components and chemical elements, chemical reaction does not occur between the silicon nitride isolation powder and the substrate, only alpha → beta phase transformation reaction occurs, and the phase transformation action can increase phase-phase bonding between the silicon nitride isolation powder and the silicon nitride ceramic substrate 2, so that the mechanical property of the product can be improved, and other impurities such as white spots and the like can not be generated on the surface and in the silicon nitride ceramic substrate 2.
The above-mentioned embodiments are merely illustrative of the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the scope of the present invention.
Claims (5)
1. A method for preparing a silicon nitride ceramic substrate isolation layer by using a silicon nitride ultrathin tape-casting film belt is characterized by comprising the following steps:
s1, mixing silicon nitride isolation powder with a dispersant, a solvent and a binder according to a mass ratio of 50 to 60;
s2, defoaming the prepared slurry by using a vacuum defoaming machine to make the viscosity reach 3#6r:1000 to 2000mpa.s;
and S3, casting the defoamed slurry in a casting machine to prepare a film with the thickness of 10 to 50 mu m.
2. The method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin casting film strip as claimed in claim 1, wherein the method comprises the following steps: dispersing agent: AKM0531 or D1001.
3. The method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin casting film strip as claimed in claim 1, wherein the method comprises the following steps: solvent: benzene + alcohol or alcohol + ketone mixed solvent system.
4. The method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin casting film strip as claimed in claim 3, wherein the silicon nitride ceramic substrate isolating layer comprises the following steps: solvent: xylene + n-butanol or ethanol + butanone.
5. The method for preparing the silicon nitride ceramic substrate isolating layer by the silicon nitride ultrathin casting film strip as claimed in claim 1, 2, 3 or 4, wherein the silicon nitride ceramic substrate isolating layer comprises the following steps: the method comprises the following steps:
s1, isolating silicon nitride powder, a dispersing agent and a mixed solvent system of benzene + alcohol or alcohol + ketone according to a mass fraction ratio of 50:1:100, mixing the materials together, performing ball milling for 30min to obtain a suspension, adding 55% of a binder into the suspension according to the mass percent, and continuing ball milling for 1 to 2H until the slurry is uniformly mixed;
s2, discharging the slurry, and testing the discharged viscosity of the slurry to be 3#6r: and (2) 500 to 700mpa.s, then placing the mixture in a vacuum defoaming machine for defoaming, wherein the vacuum degree of the vacuum defoaming machine is-0.01 MPa, the slurry temperature is 30 to 50 ℃, and the defoaming viscosity is 3#6r:1000 to 2000mpa.s;
s3, casting the defoamed slurry, wherein the machine speed of the casting machine is as follows: 0.1 to 0.5m/min, machine temperature of the casting machine: 25 to 30 ℃, casting knife height of a casting machine: 0.15 to 0.50mm; the film thickness is 10 to 50 μm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116063084A (en) * | 2023-04-04 | 2023-05-05 | 江苏富乐华功率半导体研究院有限公司 | Preparation method of boron nitride printing paste |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116063084A (en) * | 2023-04-04 | 2023-05-05 | 江苏富乐华功率半导体研究院有限公司 | Preparation method of boron nitride printing paste |
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