CN115417370A - Packaging structure and packaging method of pressure sensor chip - Google Patents
Packaging structure and packaging method of pressure sensor chip Download PDFInfo
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- CN115417370A CN115417370A CN202211125693.8A CN202211125693A CN115417370A CN 115417370 A CN115417370 A CN 115417370A CN 202211125693 A CN202211125693 A CN 202211125693A CN 115417370 A CN115417370 A CN 115417370A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000003292 glue Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000007917 intracranial administration Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 210000003625 skull Anatomy 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The application discloses a packaging structure of a pressure sensor chip, which is characterized by comprising a shell, a thermistor, a pressure chip and a substrate, wherein the thermistor, the chip and the substrate are arranged in the shell, and the chip and the thermistor are respectively connected with a substrate bonding pad; the temperature sensor chip and the pressure chip can be packaged on the same substrate through the design, and the pressure and the temperature can realize simultaneous signal acquisition; and the hard substrate adopts a laser hole digging mode to expose the pressure sensing area of the chip so as not to influence detection sensing.
Description
The invention relates to the technical field of multi-chip packaging, in particular to a packaging structure and a packaging method of a pressure sensor chip.
Background
MEMS (Micro-Electro-Mechanical System ). MEMS chips are used to manufacture electromechanical systems on silicon chips by semiconductor technology, which can convert external physical and chemical signals into electrical signals. MEMS is considered one of the most promising technologies in the 21 st century, and is the second revolution if semiconductor microfabrication is considered the first microfabrication revolution. A MEMS sensor is a device formed by packaging a MEMS chip and an application specific integrated circuit chip (e.g., ASIC chip) together. The most important of the MEMS sensors is the MEMS chip. The MEMS chip can convert external physical and chemical signals into electrical signals, and the ASIC further processes and transmits the electrical signals generated by the MEMS chip to a next stage of circuit.
The pressure MEMS chip in the prior art adopts two kinds of packaging structures: 1. soldering the MEMS chip to the pad (substrate) surface of the chip by using an extremely fine copper wire, then bypassing the back surface of the chip, wholly inserting the MEMS chip into the metal head, and filling the MEMS chip with silica gel for packaging; 2. and carrying out routing packaging on the MEMS chip patch flexible circuit substrate in a COB (chip on Board) mode, wholly plugging in the metal head, and filling the metal head with silica gel for packaging. But the size of the chip is only 1mm due to complicated operation, the pad size of the chip is only 100um, and the difficulty in chip welding operation at the size is high; and moreover, the gold wire is easy to collapse in the process of filling the silica gel by adopting a routing mode, the reliability is reduced, routing equipment is required to be higher, and the packaging cost is increased. Therefore, how to package the small-sized MEMS chip for easy operation, thereby improving the reliability of chip packaging and reducing the packaging cost is a technical problem that needs to be solved urgently.
Disclosure of Invention
The present application aims to provide a pressure sensor chip packaging structure and a pressure sensor chip packaging method, which are used for solving the problems of high difficulty, low reliability and high packaging cost of skull pressure chip packaging in the prior art.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
the application of the first aspect provides a packaging structure of pressure sensor chip, its characterized in that, including shell body, thermistor, pressure chip and base plate, thermistor, chip and the base plate is in the shell body, wherein the chip with thermistor respectively with the base plate pad is connected.
Optionally, the front surface of the chip and the front surface of the substrate are bonded by a bonding pad.
Optionally, the thermistor is soldered to the front surface of the substrate by a solder pad.
Optionally, the upper side of the substrate is filled with glue.
Optionally, the package structure is electrically connected to the back side of the substrate.
Optionally, the outer casing includes the chip exposed area, wherein the outer casing structural length is 8mm, the chip exposed area is 4mm, the inner diameter size is 0.9mm, and the outer diameter size is 1.2mm.
Optionally, the substrate comprises two layers of flexible substrate.
Optionally, the substrate includes a layer of flexible substrate and a layer of rigid plate.
In a second aspect, the present application provides a method for packaging a pressure sensor chip, including the steps of:
dotting solder on a substrate bonding pad, and aligning a chip and a thermistor bonding pad with the substrate bonding pad respectively;
baking and heating to melt and weld the solder, so as to realize the electrical connection between the chip and the thermistor as well as the substrate;
plugging the basic part for realizing the electric connection into the metal head;
filling the entire metal head with glue;
and (5) carrying out thermal baking curing.
Optionally, the baking is at a curing temperature such that the glue flows sufficiently into the entire metal head interior.
The beneficial effect of this application is:
the embodiment of the application provides a packaging structure of a pressure sensor chip, which is characterized by comprising a shell, a thermistor, a pressure chip and a substrate, wherein the thermistor, the chip and the substrate are arranged in the shell, and the chip and the thermistor are respectively connected with a substrate bonding pad; the temperature sensor chip and the pressure chip can be packaged on the same substrate through the design, and the pressure and the temperature can realize simultaneous signal acquisition; and the hard substrate adopts a laser hole digging mode to just expose the pressure sensing area of the chip without influencing detection sensing.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic view of a cranial pressure chip according to an embodiment of the present application;
FIG. 2 is a schematic view of a straight tube type cranial pressure probe package according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a probe housing according to an embodiment of the present disclosure;
fig. 4 is a schematic view of an internal package structure according to an embodiment of the present disclosure;
fig. 5 is a schematic view of a substrate structure provided in an embodiment of the present application;
fig. 6 is a schematic view of another substrate structure provided in the present embodiment;
fig. 7 a-7 b are schematic flow charts of a packaging method provided in an embodiment of the present application;
fig. 8 is a schematic diagram of a cranial pressure test according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
Fig. 1 is a schematic view of a cranial pressure chip according to an embodiment of the present application. As shown in FIG. 1, the cranial pressure chip 10 includes a resistance output portion 101 and a sensing chip portion 102, wherein the chip sensing portion 102 is functionally divided into a chip sensing area, a chip hollow area, and a chip bridge arm. The piezoresistive pressure sensor is prepared based on the piezoresistive effect principle of silicon, when a semiconductor material is acted by external pressure, the mobility of a current carrier changes, so that the resistivity changes, the resistance value changes, a silicon film is used as a force sensitive element, 4 equivalent silicon doped resistors connected into a Wheatstone bridge are used as conversion elements, external pressure signals are converted into electric signals, and the real-time measurement of the external pressure is realized. When external pressure acts on the silicon film, the diaphragm deforms, the surface stress distribution changes, the resistance value of the silicon doped resistor changes, the bridge loses balance, and a voltage signal is output. When no pressure acts on the sensitive diaphragm, the resistance values of the 4 resistors are identical, namely R1= R2= R3= R4= R, the bridge is balanced, and the output voltage is zero; when pressure acts on the sensitive membrane, the 4 resistors are asymmetrically changed, the bridge is out of balance, and voltage is output. Ideally, assuming that 4 resistance change amounts are equal, the resistance change directions at symmetrical positions are the same, and the resistance change directions at adjacent positions are opposite, that is, the resistance change directions at the 4 symmetrical positions are opposite
Δ R1= | Δ R2| = Δ R3= | Δ R4| = Δ R, output voltage (V) of bridge out ) Can be expressed as
In the formula: delta R/R is a voltage dependent resistorA rate of change; v i Is the supply voltage. When the supply voltage is constant, the output voltage is proportional to the change rate of the voltage dependent resistor.
Fig. 2 is a schematic view of a straight tube type cranial pressure probe package structure provided in an embodiment of the present application, and the package structure shown in fig. 2 includes a substrate frame 201, an NTC thermistor 202, and a chip 203. Wherein, the upper part of the substrate frame 201 is filled with glue, the front surface of the chip 203 is tightly attached to the substrate frame, and the front surface of the chip is welded with the substrate frame pad; the thermistor 202 is schematically illustrated as an NTC thermistor in fig. 2, but is not limited to an NTC thermistor, and may be any thermistor with a small volume, and the thermistor 202 is located below the substrate frame 201. Electrical connections are drawn through the back side of the substrate as shown in fig. 2.
Fig. 3 is a schematic structural diagram of a probe casing according to an embodiment of the present application. The structural dimensions of the probe casing shown in fig. 3 are 8mm in length, 4mm in chip exposure area, 0.9mm in inner diameter and 1.2mm in outer diameter. The size of the outer shell of the cranial pressure sensor is determined according to the size of the chip, and if a smaller sensor chip is available, the size of the outer shell can be smaller.
Fig. 4 is a schematic view of an internal package structure according to an embodiment of the present disclosure. The internal package structure of the substrate shown in fig. 4 is the internal package structure of the package structure shown in fig. 2. The structure is similar to the embodiment described in fig. 2. Comprises a substrate, a chip and an NTC thermistor. The front surface of the chip is tightly attached to the substrate through chip pad welding, the NTC thermistor is tightly attached to the front surface of the substrate, and glue is filled above the back surface of the substrate. And is led out through the back surface of the substrate.
According to the substrate in the embodiment, the thermistor and the chip are packaged on the same substrate, so that simultaneous measurement of pressure and temperature is realized.
Fig. 5 is a schematic view of a substrate structure according to an embodiment of the present disclosure. As shown in fig. 5, the front pad of the flexible plate is connected to the chip pad, the back pad is connected to the thermistor pad, and the length of the flexible plate can be customized according to the test length and the required length of the device, and the connector is adapted or the wire is soldered to the pad of the substrate. The pressure chip and the thermistor are arranged on two surfaces of the flexible substrate, the flexible substrate needs two layers, the upper layer is provided with a circuit of the pressure sensor, and the lower layer is provided with a circuit of the thermistor. Finally, the flexible substrate is moved to the tail end of the flexible substrate, and the connector is welded for connection.
Fig. 6 is a schematic view of another substrate structure provided in the embodiment of the present application. As shown in fig. 6, a single-layer flexible board is adopted, the pressure chip and the thermistor chip are arranged on a plane, and a hard board is arranged on the whole back of the flexible board for supporting. The wiring is routed to the tail end of the other end of the flexible board, and the plug connector is welded to be connected out.
Fig. 7 a-7 b are schematic flow charts of a packaging method according to an embodiment of the present disclosure. The substrate can be implemented substantially as shown in fig. 7a using a flexible circuit board or using ceramic. The silver glue or solder is firstly dotted on the bonding pad of the substrate, then the chip and the thermistor bonding pad are aligned with the bonding pad of the substrate, and a high-precision chip mounter can be used for alignment. And after the chip is placed, baking and heating the chip to solidify the glue or melt the solder to weld the chip. The electric connection between the chip and the substrate is realized. The front side of the chip is now facing the underside of the substrate frame as shown in figure 7 a.
The whole substrate completed in fig. 7a is plugged into the metal head as shown in fig. 7b, and then the opening of the metal head is filled with silicone glue. The glue is allowed to flow into the chip surface. And simultaneously filling the glue into the whole metal head. And (4) carrying out thermal baking curing after the filling is finished. And controlling the baking temperature to ensure that the glue fully flows into the whole metal head.
Fig. 8 is a schematic diagram of a cranial pressure test provided by an embodiment of the present application. As shown in figure 8, the probe encapsulated by the embodiment is plugged into an intracranial test area, signals are led out by using a metal wire, and temperature and pressure signals in the intracranial area are monitored and tested after data processing. By using the packaging structure provided by the embodiment of the application, the pressure and temperature information can be obtained at the same time, and then the obtained pressure and temperature signals are subjected to signal amplification and signal filtering, and then waveform display and data storage can be performed, so that intracranial pressure testing is completed.
The packaging structure and the packaging method can adopt a mode of combining the flexible substrate and the hard substrate to completely adopt a patch mode for welding; the temperature sensor chip and the pressure chip are packaged on the same substrate, and the pressure and the temperature can realize simultaneous signal acquisition; the hard substrate adopts a laser hole digging mode to expose the pressure sensing area of the chip so as not to influence detection sensing. The embodiment of the application can be manually operated under a microscope or automatically operated by a chip mounter, so that the packaging difficulty is reduced, and the reliability is improved.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. The utility model provides a packaging structure of pressure sensor chip which characterized in that, includes the shell body, thermistor, pressure chip and base plate, thermistor, chip and the base plate is in the shell body, wherein the chip with thermistor respectively with the base plate pad is connected.
2. The package structure of a pressure sensor die of claim 1, wherein the front side of the die is bonded to the front side of the substrate by a bonding pad.
3. The package structure of a pressure sensor die of claim 1, wherein the thermistor is bonded to the front side of the substrate by a bonding pad.
4. The package structure of pressure sensor die of claim 1 wherein the top of said substrate is filled with glue.
5. The package structure for a pressure sensor die of claim 1 wherein the package structure provides electrical connections through the back side of the substrate.
6. The packaging structure of pressure sensor die of claim 1, wherein the outer casing includes the die exposure area, wherein the outer casing structure has a length of 8mm, a die exposure area of 4mm, an inner diameter dimension of 0.9mm, and an outer diameter dimension of 1.2mm.
7. The packaging structure of a pressure sensor die of claim 1, wherein the substrate comprises two layers of flexible substrate.
8. The pressure sensor die package of claim 1, wherein the substrate comprises a flexible substrate and a rigid substrate.
9. A packaging method of a pressure sensor chip is characterized by comprising the following steps:
dotting solder on a substrate bonding pad, and aligning a chip and a thermistor bonding pad with the substrate bonding pad respectively;
baking and heating to melt and weld the solder, so as to realize the electrical connection between the chip and the thermistor as well as the substrate;
plugging the metal head with the basic material for realizing electric connection;
filling the entire metal head with glue;
and (5) carrying out thermal baking curing.
10. The method of packaging a pressure sensor die of claim 9 wherein said baking cures at a temperature such that said glue flows substantially throughout said metal head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211125693.8A CN115417370A (en) | 2022-09-15 | 2022-09-15 | Packaging structure and packaging method of pressure sensor chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211125693.8A CN115417370A (en) | 2022-09-15 | 2022-09-15 | Packaging structure and packaging method of pressure sensor chip |
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| CN115417370A true CN115417370A (en) | 2022-12-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116919352A (en) * | 2023-08-16 | 2023-10-24 | 广东迈科鼎医疗科技有限公司 | Miniature sensor for measuring pressure and temperature in human tissue and packaging technology thereof |
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| US20170020402A1 (en) * | 2015-05-04 | 2017-01-26 | The Board Of Trustees Of The University Of Illinois | Implantable and bioresorbable sensors |
| CN106568539A (en) * | 2016-10-20 | 2017-04-19 | 上海交通大学 | Polymer substrate-based monolithic integrated temperature and humidity flexible sensor and preparation method |
| US20180010974A1 (en) * | 2016-07-08 | 2018-01-11 | Millar Inc. | Pressure sensor system |
| US20180325386A1 (en) * | 2017-05-09 | 2018-11-15 | Yale University | Multiplexed implantable sensor probe |
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2022
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| US20120112347A1 (en) * | 2010-06-11 | 2012-05-10 | Helmut Eckhardt | Flexible electronic devices and related methods |
| CN102680159A (en) * | 2012-05-24 | 2012-09-19 | 柯远珍 | Sensor |
| US20170020402A1 (en) * | 2015-05-04 | 2017-01-26 | The Board Of Trustees Of The University Of Illinois | Implantable and bioresorbable sensors |
| CN204991696U (en) * | 2015-09-11 | 2016-01-20 | 深圳市汇顶科技股份有限公司 | Sensing chip package subassembly and electronic equipment who has this sensing chip package subassembly |
| US20180010974A1 (en) * | 2016-07-08 | 2018-01-11 | Millar Inc. | Pressure sensor system |
| CN106568539A (en) * | 2016-10-20 | 2017-04-19 | 上海交通大学 | Polymer substrate-based monolithic integrated temperature and humidity flexible sensor and preparation method |
| US20180325386A1 (en) * | 2017-05-09 | 2018-11-15 | Yale University | Multiplexed implantable sensor probe |
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| CN116919352A (en) * | 2023-08-16 | 2023-10-24 | 广东迈科鼎医疗科技有限公司 | Miniature sensor for measuring pressure and temperature in human tissue and packaging technology thereof |
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