CN115410899A - Silicon carbide composite wafer and method for manufacturing same - Google Patents

Silicon carbide composite wafer and method for manufacturing same Download PDF

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Publication number
CN115410899A
CN115410899A CN202110617448.8A CN202110617448A CN115410899A CN 115410899 A CN115410899 A CN 115410899A CN 202110617448 A CN202110617448 A CN 202110617448A CN 115410899 A CN115410899 A CN 115410899A
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silicon carbide
wafer
substrate
wafer substrate
composite wafer
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曾彦凯
江柏萱
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Hongchuang Applied Technology Co ltd
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Hongchuang Applied Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204—Di-electric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206—Insulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/302—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/306—Resistant to heat

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention relates to a silicon carbide composite wafer and a manufacturing method thereof, which are suitable for semiconductor processing procedures, electronic products and semiconductor equipment. The silicon carbide composite wafer comprises a silicon carbide material and a wafer substrate, wherein the upper surface of the wafer substrate is combined with the lower surface of the silicon carbide material, and both or any one of the lower surface of the silicon carbide material and the upper surface of the wafer substrate is subjected to surface modification, so that the silicon carbide material is directly and tightly combined with the wafer substrate. The invention has the advantages that the joint between different materials of the composite wafer has strong joint capacity, the subsequent processing is easier, the process can be shortened and the yield can be improved under the state that the materials are tightly combined, and the industrial applicability is high.

Description

Silicon carbide composite wafer and method for manufacturing same
Technical Field
The invention relates to a silicon carbide composite wafer and a manufacturing method thereof, which can be used for semiconductor manufacturing process.
Background
With the trend of high frequency communication, the performance of the related communication device is required to be improved to meet the market demand, so that a wafer or a composite wafer capable of being thinned becomes an economical choice. In the known composite wafer, a GaN layer is grown after a seed crystal film is formed on a substrate wafer of a bottom layer by a vapor phase method; alternatively, HVPE (hybrid vapor phase epitaxy) may be used to form a seed layer on the underlying substrate wafer. There is a further need for composite wafers, either materials or processes.
Disclosure of Invention
In the process of fabricating the composite wafer in the prior art, the junction between the substrate and the overlying material needs to be formed into a thin film to tightly join the two different materials, which is complicated and time-consuming. Accordingly, to address the above-described shortcomings, the present invention provides a silicon carbide composite wafer and a method of manufacturing the same.
The invention aims to provide a silicon carbide composite wafer, which comprises a silicon carbide material and a wafer substrate, wherein the upper surface of the wafer substrate is combined with the lower surface of the silicon carbide material, and one or both of the lower surface of the silicon carbide material and the upper surface of the wafer substrate are subjected to surface modification so that the silicon carbide material is directly combined with the wafer substrate.
Further, a silicon carbide composite wafer as described, wherein the wafer substrate is ceramic or glass.
Further, the silicon carbide composite wafer as described, wherein the ceramic is selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide and silicon nitride.
Further, a silicon carbide composite wafer as described, wherein the wafer substrate is a single crystal or polycrystalline material.
Further, the silicon carbide composite wafer is provided, wherein the thickness of the silicon carbide material is 0.2-500 μm.
Further, the silicon carbide composite wafer as described, wherein the upper surface of the silicon carbide material further comprises a crystalline layer.
Further, the silicon carbide composite wafer as described, wherein the surface modification is surface generation of electrostatic or hydrogen bonding or physical bonding; in a preferred embodiment, the physical bond is Vanderwatt force, coulomb force, or friction.
Another object of the present invention is to provide a method for manufacturing a silicon carbide composite wafer, which comprises the following steps: (a) a silicon carbide material is formed by crystal growth treatment of the silicon carbide; and (b) providing a wafer substrate, and directly bonding the lower surface of the silicon carbide material and the upper surface of the wafer substrate after surface modification to generate hydrogen bonds or electrostatic or physical bonding to form the silicon carbide composite wafer.
Further, in the manufacturing method, the surface modification is performed by soaking in hydrofluoric acid or other hydrogen containing solution to generate hydrogen bonds on one or both of the lower surface of the silicon carbide material and the upper surface of the wafer substrate.
Further, the method of manufacturing as described, wherein the silicon carbide material is electrostatically bonded to the wafer substrate.
Compared with the prior art, the silicon carbide composite wafer has the characteristics of high dielectric constant, insulativity, high thermal conductivity, good heat resistance and heat dissipation performance and particularly stable performance under high humidity because the substrate is made of ceramic or glass material, and the manufacturing method of the invention has better bonding capability because the silicon carbide material is directly bonded with the wafer substrate, and the two different materials can be tightly bonded without forming a film in bonding as in the prior art, so the manufacturing process of the invention is simpler and more convenient.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic view of a silicon carbide composite wafer according to the present invention.
Description of reference numerals:
1. silicon carbide composite wafer
11. Silicon carbide material
12. Wafer substrate
13. Crystalline layer
111. A contact surface.
Detailed Description
The following embodiments should not be construed to unduly limit the invention. One of ordinary skill in the art may make modifications and variations to the embodiments discussed herein without departing from the spirit or scope of the present invention, and yet remain within the scope of the invention.
The inclusion or inclusion herein is meant to not preclude the presence or addition of one or more other components, steps, operations, and/or elements to the recited components, steps, operations, and/or elements. About or near or substantially means having a value or range that is close to the allowable tolerance to avoid being used by any unreasonable third party, illegal or unfair as an accurate or absolute value to understand the present disclosure. A means that the object has one or more (i.e., at least one) grammatical object.
The invention provides a silicon carbide composite wafer, which comprises a silicon carbide material and a wafer substrate, wherein the upper surface of the wafer substrate is combined with the lower surface of the silicon carbide material, wherein the surface modification is carried out on both or any one of the lower surface of the silicon carbide material and the upper surface of the wafer substrate, so that the silicon carbide material is directly combined with the wafer substrate.
The invention also provides a method for manufacturing the silicon carbide composite wafer, which comprises the following steps: (a) a silicon carbide material is formed by crystal growth treatment of the silicon carbide; and (b) providing a wafer substrate, and directly bonding the lower surface of the silicon carbide material and the upper surface of the wafer substrate after surface modification to generate hydrogen bonds or static electricity to form the silicon carbide composite wafer.
Fig. 1 is a schematic view of a silicon carbide composite wafer according to the present invention. The silicon carbide composite wafer 1 is formed by directly bonding a wafer substrate 12 and a silicon carbide material 11, and there is no additional thin film structure between the wafer substrate 12 and the silicon carbide material 11 but only a contact surface 111 where the wafer substrate 12 and the silicon carbide material 11 are directly bonded. Further, a crystallization layer 13 is optionally further included above the sic material 11.
The wafer substrate 12 is preferably ceramic or glass, wherein "ceramic" refers to a compound of metal and nonmetal, including optionally high-temperature processed inorganic nonmetallic solid materials such as silicates, oxides, carbides, nitrides, sulfides, borides, and the like, preferably including but not limited to those selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide, and silicon nitride. Such as the substrate, the ceramic being selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide, and silicon nitride; the substrate is made of ceramics selected from aluminum nitride, aluminum oxide and silicon carbide; the substrate is made of ceramics selected from alumina, silicon carbide and silicon nitride; the substrate, the ceramic is selected from aluminum nitride, silicon carbide and silicon nitride; the substrate is made of ceramics selected from aluminum nitride and aluminum oxide; the substrate is made of ceramics selected from aluminum nitride and silicon carbide; the substrate is made of ceramics selected from aluminum nitride and silicon nitride; the substrate is made of ceramics selected from alumina and silicon carbide; the substrate is made of ceramics selected from alumina and silicon nitride; the substrate is made of ceramics selected from silicon carbide and silicon nitride; the substrate, the ceramic is selected from aluminum nitride; the substrate, the ceramic is selected from alumina; the substrate, the ceramic is selected from silicon carbide; the substrate is made of silicon nitride.
The single crystal or polycrystalline materials described herein refer to both single crystal and polycrystalline materials. The difference is that when the molten simple substance material is solidified, atoms are arranged into a plurality of crystal nuclei in a diamond crystal lattice, and if the crystal nuclei grow into crystal grains with the same crystal face orientation, a single crystal material is formed; on the other hand, if the crystal nuclei grow into crystal grains having different crystal plane orientations, a polycrystalline material is formed. The difference between polycrystalline and single crystal materials is mainly manifested in terms of physical properties. Polycrystalline materials are inferior to single crystal materials in terms of, for example, mechanical properties, electrical properties, and the like. In a preferred embodiment, the wafer substrate is a single crystal or polycrystalline material.
The thickness of the silicon carbide material described herein may be, in a preferred embodiment, from 0.2 μm to 500 μm, such as from 0.4 μm to 500 μm, from 0.6 μm to 500 μm, from 0.8 μm to 500 μm, from 1.0 μm to 500 μm, from 2.0 μm to 500 μm, from 4.0 μm to 500 μm, from 6.0 μm to 500 μm, from 8.0 μm to 500 μm, from 10 μm to 500 μm, from 12 μm to 500 μm, from 14 μm to 500 μm, from 16 μm to 500 μm, from 18 μm to 500 μm, from 0.2 μm to 180 μm, from 0.2 μm to 160 μm, from 0.2 μm to 140 μm, from 0.2 μm to 120 μm, from 0.2 μm to 100 μm, from 0.2 μm to 80 μm, from 0.2 μm to 160 μm, from 0.2 μm to 2 μm, from 0.0.0.2 μm to 2 μm, from 0.0.0.0 to 2 μm, from 0.0.0.0.0.0 to 2 μm to 500 μm, from 1 μm to 2 μm, from 0.0.0.0.0.0.0.0 μm to 500 μm, from 4 μm to 500 μm, from 4 μm. The thickness of the SiC material can be adjusted according to the requirement, for example, after the SiC material 11 is bonded to the surface of the wafer substrate 12, the SiC material 11 can be thinned by laser cutting or grinding.
The crystal layer described herein refers to a material of a main substrate of a light-emitting layer made of a single crystal material. Such as a single crystal gallium arsenide (GaAs) substrate, a gallium phosphide (GaP) substrate, an indium phosphide (InP) substrate, a sapphire (Al 2O 3) substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, and the like.
The crystal layer is epitaxially grown. The epitaxy is a continuum of a single crystal structure formed by extending a thin film grown on a single crystal substrate and adding atoms to the single crystal substrate. Such as Liquid Phase Epitaxy (LPE), vapor Phase Epitaxy (VPE), molecular Beam Epitaxy (MBE), etc., wherein vapor phase epitaxy includes Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD).
Surface modification as used herein refers to the surface of the silicon carbide material bonded to the wafer, i.e., the surface of either or both of the lower surface of the silicon carbide material and the upper surface of the wafer substrate, which is chemically or physically treated to generate hydrogen bonds or charged ions or physical bonds, including but not limited to van der waals, coulomb or friction forces, etc.
The manner in which hydrogen bonding occurs is, for example and without limitation, via immersion in a liquid containing hydrogen atoms to modify the surface and create hydrogen bonding forces. The hydrogen atom liquid may be chromic acid, sulfuric acid, hydrochloric acid, nitric acid, sulfurous acid, hydrofluoric acid, perchloric acid, hydrobromic acid, perbromic acid, fluorosilicic acid, chloropolyenemetaphosphoric acid, osmic acid, permanganic acid, selenic acid, ferric acid, fluoroboric acid, fluorosulfonic acid, cyanic acid, thiocyanic acid, metaperiodic acid, 2,4, 6-trinitrophenol, 2,4, 6-trinitrobenzoic acid, trifluoroacetic acid, trichloroacetic acid, methanesulfonic acid, benzenesulfonic acid, cyclohexanethiol sulfonic acid, 2-chloroethanethiol, or the like.
The static electricity is generated, for example, but not limited to, by impacting the contact surface with plasma to generate positive and negative charges, and the charges are attracted to each other.
The physical bonding is generated in the form of Van der Waals force, coulomb force, friction force, etc., wherein, the Van der Waals force has potential difference due to the extremely flat surface, different materials or the same material has potential difference, and the charge attraction generated by utilizing the potential difference is the Van der Waals force; the potential difference formed by providing surface charges (e.g. by plasma) is coulombic force; the static friction between solid surfaces is due to the attraction of the atoms, molecules to each other and the resistance to mutual sticking caused by the surface roughness between them on the solid surfaces.
The plasma refers to the fourth most material state except solid, liquid and gas, and is also called plasma. The gas is changed into plasma under high temperature or strong electromagnetic field, the plasma is an ionized gas with equal positive charge and negative charge, and is composed of ions, electrons and neutral atoms or molecules. Electrons in the gas are excited by the applied energy to gain energy and accelerate to impact uncharged neutral atoms, and since the uncharged neutral atoms are impacted by the accelerated electrons to generate ions and accelerated electrons with other energy, the released electrons are accelerated by the electric field to collide with other neutral atoms, and the process is repeated, so that the gas generates a gas breakdown effect (gas breakdown down) to form a plasma state. The invention utilizes the collision between the generated plasma and the process gas in the cavity to ionize the gas, and the ionized gas is attracted to the chip to modify the surface so as to form electrostatic charges on the surface.
In summary, the silicon carbide composite wafer of the present invention has the following advantages:
1. high dielectric constant, insulation, high thermal conductivity, heat resistance and heat dissipation, and particularly has stable performance under high humidity.
2. The silicon carbide material and the wafer substrate are directly jointed, and the surfaces of the silicon carbide material and the wafer substrate or the surface of either one of the silicon carbide material and the wafer substrate are modified, so that the jointing capability is strong, and the complexity of the manufacturing process can be reduced.
3. The silicon carbide composite wafer has the characteristic of strong bonding capability of the materials, can be further ground and processed to be thin according to requirements, and has high subsequent industrial utilization.
Although the present invention has been described in detail, it should be understood that the foregoing is only one preferred embodiment of the invention, and that various changes and modifications can be made within the spirit and scope of the invention.

Claims (11)

1. A silicon carbide composite wafer, comprising:
a silicon carbide material; and
a wafer substrate, the upper surface of the wafer substrate is combined with the lower surface of the silicon carbide material,
wherein, the lower surface of the silicon carbide material and the upper surface of the wafer substrate are both or either surface modified, so that the silicon carbide material is directly bonded with the wafer substrate.
2. The silicon carbide composite wafer of claim 1, wherein the wafer substrate is ceramic or glass.
3. The silicon carbide composite wafer according to claim 1, wherein the ceramic is selected from the group consisting of aluminum nitride, aluminum oxide, silicon carbide, and silicon nitride.
4. The silicon carbide composite wafer of claim 1, wherein the wafer substrate is a single crystal or polycrystalline material.
5. The silicon carbide composite wafer according to any one of claims 1 to 4, wherein the silicon carbide material has a thickness of 0.2 to 500 μm.
6. The silicon carbide composite wafer of claim 5, wherein the upper surface of the silicon carbide material further comprises a crystalline layer.
7. The silicon carbide composite wafer of any one of claims 1 to 4, wherein the surface modification is physical bonding of the surface.
8. The silicon carbide composite wafer of any one of claims 1 to 4, wherein the surface modification is surface generation of electrostatic or hydrogen bonds.
9. A method for manufacturing a silicon carbide composite wafer is characterized by comprising the following steps:
(a) Growing the silicon carbide into a silicon carbide material; and
(b) Providing a wafer substrate, and directly bonding the lower surface of the silicon carbide material and the upper surface of the wafer substrate after surface modification to generate hydrogen bonds, static electricity or physical bonding to form a silicon carbide composite wafer.
10. The method of claim 9, wherein the surface modification is hydrogenated to hydrogen bond at either or both of the lower surface of the silicon carbide material and the upper surface of the wafer substrate.
11. The method of claim 9, wherein the silicon carbide material is electrostatically bonded to the wafer substrate.
CN202110617448.8A 2021-05-27 2021-05-27 Silicon carbide composite wafer and method for manufacturing same Pending CN115410899A (en)

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CN202110617448.8A CN115410899A (en) 2021-05-27 2021-05-27 Silicon carbide composite wafer and method for manufacturing same

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Application Number Priority Date Filing Date Title
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CN115410899A true CN115410899A (en) 2022-11-29

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