CN115404457A - Method for oxidizing carbon material surface and depositing silicon nitride layer through vapor phase reaction - Google Patents

Method for oxidizing carbon material surface and depositing silicon nitride layer through vapor phase reaction Download PDF

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CN115404457A
CN115404457A CN202211050467.8A CN202211050467A CN115404457A CN 115404457 A CN115404457 A CN 115404457A CN 202211050467 A CN202211050467 A CN 202211050467A CN 115404457 A CN115404457 A CN 115404457A
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carbon material
carbon
silicon nitride
heat
layer
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吕铁铮
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Hunan Institute of Technology
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Hunan Institute of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for oxidizing and vapor-phase reaction depositing a silicon nitride layer on the surface of a carbon material relates to a method for vapor-phase reaction depositing the surface of the carbon material. The method aims to solve the problem that the surface of the existing carbon-carbon composite material is difficult to prepare a high-temperature-resistant infrared heat reflecting material. The method comprises the following steps: putting the carbon material into a heat treatment furnace, and spreading silicon monoxide powder or blocks around the surface to be deposited; introducing nitrogen into the heat treatment furnace, raising the temperature of the heat treatment furnace to 1350-1500 ℃ in the nitrogen atmosphere, keeping the temperature for 2-5 hours, and then cooling to room temperature to obtain a white substance layer on the surface of the carbon material to be deposited; the flocculent silicon nitride nanowires on the surface layer of the white substance layer are scraped, a silicon nitride ceramic layer is obtained on the surface of the carbon material, the bonding force between the silicon nitride ceramic layer and the substrate is strong, the comprehensive heat insulation performance is improved, and the energy consumption is reduced. Can be used in the field of carbon material surface treatment.

Description

Method for oxidizing carbon material surface and depositing silicon nitride layer through vapor phase reaction
Technical Field
The invention relates to a method for vapor reaction deposition on the surface of a carbon material.
Background
Photovoltaic power generation is a photoelectric conversion process, the industrial chain of a crystalline silicon product is long, and the crystalline silicon product is subjected to the processes of polycrystalline silicon-single crystal drawing, battery manufacturing and assembly manufacturing, wherein the single crystal silicon drawing is a high-temperature melting smelting process, and a high-temperature electric furnace is inevitably used. The number of the monocrystalline silicon pulling furnaces is large, according to statistics of industry development, various types of silicon crystal pulling furnaces in the photovoltaic industry approach more than 10 thousands of silicon crystal pulling furnaces, and the annual composite growth rate of more than two digits is kept. Due to the high temperature and corrosion characteristics, carbon fiber felts (hard felt, soft felt and the like) are used as main heat insulation materials in various silicon crystal furnaces and are replaced once every 2 years or so. Meanwhile, in order to save energy and reduce consumption, reduce the cost of the whole photovoltaic power generation industrial chain and improve the performance of carbon-carbon composite materials such as carbon felt and the like, a general method is to wrap a soft felt on a carbon or graphite heat-insulating cylinder in a winding way, wherein the soft felt mainly adopts viscose-based carbon fibers with low density and low heat conductivity coefficient, porous carbon fibers and the like. However, in a high-temperature state, the heat conductivity of the carbon felt is obviously increased along with the temperature rise, the heat preservation effect is greatly reduced, the average heat efficiency is only 30 percent, and most of heat is taken away through cooling water of the furnace body. Although white powder materials such as alumina, titanium dioxide and silicon nitride can greatly reflect infrared light and part of visible light in other high-temperature kiln fields, the heat efficiency can be greatly improved when the white powder materials are used as heat reflecting materials, and the white powder materials are applied to a certain extent, the kilns do not adopt carbon fiber felts for heat preservation. At present, the application of high-temperature heat reflection energy-saving materials on the surface of a heat-insulating carbon material is still completely blank in the industries of metallurgy casting and the like. The main reasons are: 1. the carbon material has stable surface structure and strong chemical inertia, and the heat reflecting material is difficult to be fixed on the surface of the carbon felt; 2. even if the binder is used, all the organic binder is carbonized to be blackened because of being used in a high-temperature process, and completely covers the heat reflecting material, so that the heat reflection fails; 3. the traditional oxide heat reflecting materials, such as alumina, titanium dioxide and the like and carbon materials can generate carbothermic reduction reaction at high temperature, and generated carbides are pulverized and fall off. In summary, although the infrared heat reflective coating material is not a new field, how to apply the infrared heat reflective coating material to a carbon substrate represented by a carbon-carbon composite material is a difficult problem to be solved. Because in the production process of the current crystalline silicon photovoltaic component, monocrystalline silicon is pulled, various crystal furnaces for polycrystalline silicon ingot casting exceed 10 thousands of crystal furnaces, and the number of the crystal furnaces is increased, the crystal furnaces are very important plates of a high-temperature heat treatment furnace, and carbon-carbon composite materials such as heat preservation carbon felt are used. The infrared heat reflection material is applied to the surface of the carbon-carbon composite material to form an effective heat reflection coating, so that the method is the most effective and direct method for reducing the growth energy consumption of crystalline silicon, and can greatly reduce the growth energy consumption of a photovoltaic silicon wafer, thereby reducing the cost of the whole photovoltaic power generation device and realizing the flat-price network of photovoltaic power generation.
As is known, in a medium-high temperature environment, heat transfer is mainly based on infrared heat radiation, in the existing high-temperature equipment, a heat insulating material only has a very low heat conduction coefficient, the heat radiation blocking capability of the heat insulating material is generally weak, and the heat insulating material is particularly represented in high-temperature thermal field environments of a sapphire furnace (about 2000 ℃), a crystalline silicon furnace (about 1400-1500 ℃), and the like, heat propagation is mainly based on radiation, the comprehensive heat conduction coefficient of the heat insulating material at the moment is sharply increased to about 10 times of that of the heat insulating material at normal temperature, and reaches 1.5-2W/m.K, the main reason is that the radiation heat of a heater is mainly based on infrared emission, but carbon-carbon composite materials such as heat insulating carbon felts have high porosity and high infrared transmittance, and much heat is radiated in an infrared form and finally taken away by cooling water of a furnace wall, so that endless energy waste is caused. At present, the thermal efficiency of a mainstream crystalline silicon furnace is between 30% and 40%, so that the production of photovoltaic silicon wafers such as monocrystalline silicon pulling and polycrystalline silicon ingot casting is a high-energy consumption industry, and a new energy-saving and consumption-reducing process is urgently needed.
Disclosure of Invention
The invention provides a method for oxidizing the surface of a carbon material and depositing a silicon nitride layer through vapor reaction, aiming at solving the problem that the surface of the existing carbon-carbon composite material is difficult to prepare a high-temperature-resistant infrared heat reflecting material.
The method for oxidizing the surface of the carbon material and depositing the silicon nitride layer by vapor phase reaction comprises the following steps:
1. putting the carbon material into a heat treatment furnace, and spreading silicon monoxide powder or blocks around the surface to be deposited;
2. configuring a nitrogen gas path in a heat treatment furnace to ensure that nitrogen gas flows on the surface of a surface to be deposited of the carbon material;
3. under the nitrogen atmosphere, raising the temperature of the heat treatment furnace to 1350-1500 ℃ and keeping for 2-5 hours, then cooling to room temperature, and obtaining a white substance layer on the surface to be deposited of the carbon material;
4. and scraping the flocculent silicon nitride nanowires on the surface layer of the white substance layer to obtain a silicon nitride layer on the surface of the carbon material.
Further, the ratio of the area of the surface to be deposited to the mass of the SiO powder is 1m 2 ：(200～2000)g。
Further, the carbon material in the first step is a carbon-carbon composite material or a graphite material.
Further, the nitrogen in the second step is high-purity nitrogen with the purity of 99.999 percent by mass.
Further, the pressure of the nitrogen atmosphere in the third step is 0.1 to 2atm.
Further, the pressure of the nitrogen atmosphere in the third step is 1.1 to 1.5atm.
Furthermore, the carbon material in the step one is a soft felt heat preservation material of the silicon single crystal furnace, and the deposition surface of the carbon material is the surface of the soft felt heat preservation material; or the carbon material is a heat preservation cylinder of the silicon single crystal furnace, and the deposition surface of the heat preservation cylinder is the inner side of the heat preservation cylinder.
The main difficulties of difficult preparation of high temperature resistant infrared heat reflecting material on the surface of carbon material are: 1. the surface of the carbon-carbon composite material or graphite is chemically inert and is difficult to combine with other substances; 2. under the high-temperature environment (> 1000 ℃), the traditional binder is carbonized, the adhesive fixing ability is completely lost, and the functional coating can fall off. The invention uses silicon monoxide as silicon source and oxygen source. The method for depositing the silicon nitride by utilizing the gas phase reaction of the silicon monoxide steam and the nitrogen has the following reaction formula:
6SiO+4N 2 ->2Si 3 N 4 +3O 2 (1)
6SiO+7N 2 ->2Si 3 N 4 +6NO (2)
in the reaction process, a small amount of generated oxygen or nitric oxide is utilized to primarily oxidize the surface of the carbon material, change the roughness of the surface and improve the reaction activity, and simultaneously, the generated silicon nitride is gradually deposited and fixed on the surface of the carbon material, and the deposited silicon nitride is also a seed crystal layer for growing silicon nitride nanowires, so that macroscopically, a layer of white flocculent substance is obtained on the surface of the final carbon material. After the flocculent material (i.e. the silicon nitride nanowire) is lightly scraped, only the white seed crystal bottom layer is remained, and the bottom layer is not easy to fall off, namely the heat reflection layer, and the preparation principle is shown in fig. 1. Can be used on a thermal field of a single crystal furnace to effectively reflect heat back, thereby reducing the energy consumption in the growth process of the single crystal silicon. The reason for scraping off the flocculent silicon nitride nanowires is that the nanowire layer is different from its bottom seed layer, and the flocculent silicon nitride nanowires easily come off and are therefore removed in advance.
Silicon nitride is a white high-temperature ceramic, and according to the wien theory, nitride and oxide are similar and have strong reflection on near infrared rays, so that the silicon nitride can be used as a heat reflection material. According to the invention, siO is heated at a high temperature by utilizing the property of certain vapor pressure, the SiO is subjected to in-situ reaction in a high-temperature nitrogen atmosphere to generate silicon nitride and is deposited on the surface of a carbon material, generally, the temperature of the nitridation reaction of the SiO is above 1350 ℃, the nitridation reaction is difficult to occur below the temperature, after the temperature reaches above 1350 ℃, the reaction occurs but the deposition speed is difficult to control, and white flocculent silicon nitride nanowires are generated continuously after the substrate material is completely covered, so that the white flocculent silicon nitride nanowires are scraped in the preparation process.
Compared with the traditional coating process for uniformly mixing heat reflection powder by using a binder, the vapor deposition method has the greatest advantages that the heat reflection material silicon nitride layer is generated on the surface of carbon at high temperature in situ, the surface of the carbon material is pre-oxidized by a small amount of generated oxygen and has a large number of defect sites, so that the heat reflection material silicon nitride layer has good interface binding force and cannot fall off along with thermal expansion and cold contraction, the heat reflection characteristic of silicon nitride deposited subsequently is kept, and the problems that in the traditional heat reflection coating process, after the organic binder is carbonized at high temperature to become black, the binding function is lost, the white heat reflection material is covered and shielded, and the heat reflection effect is lost are solved.
The method can prepare the heat reflecting layer on the soft felt heat-insulating layer of the silicon single crystal furnace and on the inner side of the carbon or graphite heat-insulating cylinder, reflect the heat generated by the graphite heater back, improve the comprehensive heat-insulating property, reduce the energy consumption and save the energy.
Drawings
FIG. 1 is a schematic diagram of the preparation of the present invention;
fig. 2 is a photograph of a silicon nitride layer formed by a gas phase reaction of the carbon-carbon composite material and the graphite surface in example 1.
Detailed Description
The following examples are used to demonstrate the beneficial effects of the present invention.
Example 1: the method for oxidizing the surface of the carbon material and depositing the silicon nitride layer by vapor phase reaction in the embodiment comprises the following steps:
1. taking a carbon-carbon composite plate (length multiplied by width =5cm multiplied by 3 cm) and a graphite plate (length multiplied by width =5cm multiplied by 3 cm) as substrates, putting the carbon-carbon composite plate and the graphite plate into a heat treatment furnace, taking 0.6 g of silicon oxide particles, and flatly paving the silicon oxide particles around the carbon-carbon composite plate and the graphite plate;
2. configuring a gas path of nitrogen in the heat treatment furnace to ensure that the nitrogen can flow to the surfaces of the carbon-carbon composite material plate and the graphite plate;
3. under the atmosphere of nitrogen, keeping the atmospheric pressure at 1.1, raising the temperature of the heat treatment furnace to 1350 ℃ and keeping the temperature for 4 hours, and then cooling to room temperature to obtain a white substance layer on the surfaces of the carbon-carbon composite material plate and the graphite plate;
4. and scraping the flocculent silicon nitride nanowires on the surface layer of the white substance layer to obtain silicon nitride layers on the surfaces of the carbon-carbon composite material plate and the graphite plate.
In this embodiment, a photograph of obtaining a white substance layer on the surfaces of the carbon-carbon composite material plate and the graphite plate through the third step is shown in fig. 2, where the white substance layer is obtained on the surfaces of the AO carbon-carbon composite material plate and the graphite plate, and B is the white substance layer obtained on the surface of the graphite plate, as can be seen from fig. 2, the white substance layer is obtained on the surface of the carbon material plate, the surface is flocculent nanowires, and the bottom layer is a seed crystal layer;
in this example, siO particles were formed in a high temperature nitrogen atmosphere at 1350 ℃The particles are heated and evaporated, the SiO steam generates nitridation reaction, the generated oxygen corrodes the surface of the carbon material, and 2C + O is generated 2 ->CO reacts, leaving a large number of defect sites, activating the carbon surface, with the formation of Si 3 N 4 And the carbon material is deposited on the surface of the carbon material, the corroded carbon material also improves the bonding force of the carbon and the interface of the silicon nitride deposited subsequently, and loose Si is removed 3 N 4 And the nano wire is the heat reflection coating with enhanced binding force.
Example 2: the method for oxidizing the surface of the carbon material and depositing the silicon nitride layer by vapor phase reaction in the embodiment comprises the following steps:
1. placing a 32-inch carbon heat-insulating cylinder into a heat treatment furnace, taking 500 g of silicon oxide particles, and spreading the silicon oxide particles in the middle of the carbon heat-insulating cylinder;
2. a gas path of nitrogen in the heat treatment furnace is configured to ensure that the nitrogen can flow to the inner surface of the carbon heat-preserving cylinder;
3. under the nitrogen atmosphere, keeping the atmospheric pressure at 1.1, raising the temperature of the heat treatment furnace to 1350 ℃ and keeping the temperature for 4 hours, then cooling to room temperature, covering a white substance layer on the inner surface of the carbon heat-preserving cylinder, wherein the white substance layer is a white flocculent substance in a macroscopic view;
4. and scraping the flocculent silicon nitride nanowires on the surface layer of the white substance layer to obtain a silicon nitride layer on the inner surface of the carbon-carbon heat-preserving cylinder.
Taking a 32-inch carbon heat-preserving cylinder as an example, the power consumption of a single crystal furnace with an infrared heat-reflecting coating in the process sections of material melting, constant-diameter pulling, ending and the like is lower than that of a single crystal furnace without the infrared heat-reflecting coating, the constant-diameter power of the single crystal furnace is reduced from 64KW to 55KW, and the reduction amplitude is about 14%. The heat reflection coating is estimated to save energy by 15 percent, according to the statistics of the photovoltaic society of China, the average power consumption of a single crystal furnace is 26.2kWh/kg in 2020 and 23kWh/kg in 2022, and the electricity can be saved by about 1000 ℃ in a single crystal furnace of 300 kg by using the heat reflection coating. According to the yield of 200GW (about 2700 tons of silicon material for 1 GW) of the single crystal pulling photovoltaic enterprise in China in 2021, the economic benefit brought by the single crystal pulling photovoltaic enterprise can reach billion scale.
The method of example 2 is used for preparing a silicon nitride heat reflection layer on the surface of a 32-inch graphite heat-preservation barrel, the comprehensive energy consumption is reduced by about 15%, and the main difference between the method and the 32-inch carbon heat-preservation barrel is that the graphite surface is relatively smooth, and a thicker silicon nitride seed layer can be deposited, so that the infrared reflectivity is improved.

Claims (6)

1. A method for oxidizing the surface of a carbon material and depositing a silicon nitride layer by vapor phase reaction is characterized by comprising the following steps:
1. putting the carbon material into a heat treatment furnace, and spreading silicon monoxide powder or blocks around the surface to be deposited;
2. configuring a nitrogen gas path in a heat treatment furnace to ensure that nitrogen gas flows on the surface of the surface to be deposited of the carbon material;
3. under the nitrogen atmosphere, raising the temperature of the heat treatment furnace to 1350-1500 ℃ and keeping for 2-5 hours, then cooling to room temperature, and obtaining a white substance layer on the surface to be deposited of the carbon material;
4. and scraping the flocculent silicon nitride nanowires on the surface layer of the white substance layer to obtain a silicon nitride layer on the surface of the carbon material.
2. The method of claim 1, wherein the carbon material in the first step is a carbon-carbon composite material or a graphite material.
3. The method according to claim 1 or 2, wherein in the first step, the ratio of the area of the surface to be deposited to the mass of the silicon monoxide powder is 1m 2 :(200～2000)g。
4. The method for oxidizing and vapor-phase reaction depositing a silicon nitride layer on the surface of a carbon material according to claim 1 or 2, wherein the nitrogen gas in the second step is a high purity nitrogen gas having a purity of more than 99.99% by mass.
5. The method for oxidizing and vapor-phase reaction-depositing a silicon nitride layer on the surface of a carbon material as claimed in claim 1 or 2, wherein the pressure of the nitrogen atmosphere in the third step is 0.1 to 2atm.
6. The method for oxidizing the surface of a carbon material and vapor-phase depositing a silicon nitride layer according to claim 1 or 2, wherein the carbon material in the first step is a soft felt thermal insulating material of a silicon single crystal furnace, and the deposition surface is a surface of the soft felt thermal insulating material; or the carbon material is a heat preservation cylinder of the silicon single crystal furnace, and the deposition surface of the heat preservation cylinder is the inner side of the heat preservation cylinder.
CN202211050467.8A 2022-08-29 2022-08-29 Method for oxidizing carbon material surface and depositing silicon nitride layer through vapor phase reaction Pending CN115404457A (en)

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