CN115390331A - Chip integrated optical phased array system based on transition metal sulfide coating - Google Patents

Abstract

The invention discloses a transition metal sulfide coating-based chip integrated all-optical phased array system, which separates a homologous light field into a plurality of optical paths through an optical beam splitter; covering a transition metal sulfide coating on the surface of the transmission waveguide, and growing an external electrode; the modulation voltage is loaded on the transition metal sulfide coating, and the refractive index of the integrated waveguide of the chip is adjusted by changing the concentration of free carriers, so that the electro-optic phase modulation of a transmitted optical field is realized; guiding a plurality of optical paths to an output area, and realizing array output of a multipath light field through a coupling grating; the modulation voltage is used as input, the optical field phase distribution is used as output, and various functions of the optical phased array are realized. The transition metal sulfide coating can improve the batch modulation capability of multi-path optical field phases, and provides a brand-new solution for chip integrated free space optical application while realizing the intercommunication and interconnection of an electrical domain and an optical domain of a chip integrated microwave photonic system.

Description

Chip integrated optical phased array system based on transition metal sulfide coating

Technical Field

The invention belongs to the interdisciplinary field of integrated optics, semiconductor physics and microwave photonics, in particular to an integrated optical phased array system, and particularly relates to a full-optical phased array system which adjusts the refractive index of chip integrated waveguide through the concentration change of free carriers generated by a transition metal sulfide coating under the action of external voltage and realizes the precise regulation and control of an optical field by using a super-large scale integrated optical path.

Background

The chip integrated optical path has the advantages of small volume, low power consumption, stable performance, high integration and the like, and is particularly suitable for being used as a substitute scheme of a free space optical path and an all-fiber optical path of a traditional discrete device to construct optical systems such as an optical communication system, an optical computing system, an optical phased array, a microwave photon signal processing system and the like with large system scale, complex structural function and numerous devices. In particular, the chip integrated optical circuit represented by silicon on insulator is highly compatible with the traditional integrated circuit technology, and the characteristic makes it possible to construct a chip-scale photoelectric hybrid system. The chip integrated photoelectric system consists of a series of passive devices and active devices: the passive devices mainly comprise a photoelectric directional coupler, an optical beam splitter, a polarization beam splitter, a wavelength division multiplexer and the like, and the active devices mainly comprise a light source, a detector, an optical modulator, a tunable filter, a tunable attenuator and the like; the passive device mainly relates to optical field transmission, and the active device provides an external interface for optical field control.

The optical phased array realizes the functions of light field deflection, wavefront correction, focusing and aiming and the like through the accurate regulation and control of the phases of multiple paths of light fields, and is widely applied to the fields of laser radars, laser communication, laser detection and the like. The chip integrated optical phased array is the preferred technical solution with light load, and the performance of the chip integrated optical phased array is highly dependent on the performance of the chip integrated modulator.

Disclosure of Invention

Aiming at the defects, the technical problem to be solved by the invention is how to separate a homologous light field into a plurality of optical paths through an optical beam splitter; covering a transition metal sulfide coating on the surface of the transmission waveguide, and growing an external electrode; the modulation voltage is loaded on the transition metal sulfide coating, and the refractive index of the integrated waveguide of the chip is adjusted by changing the concentration of the free carriers, so that the electro-optic phase modulation of a transmitted light field is realized; guiding a plurality of optical paths to an output area, and realizing array output of a multipath light field through a coupling grating; the modulation voltage is used as input, the optical field phase distribution is used as output, and various functions of the optical phased array are realized.

In view of the above-mentioned drawbacks, an object of the present invention is to provide a chip integrated optical phased array system based on a transition metal sulfide plating layer, where the transition metal sulfide plating layer can improve the batch modulation capability of multiple optical field phases, and provide a brand new solution for chip integrated free space optical application while achieving interconnection between the electrical domain and the optical domain of a chip integrated microwave photonic system.

In order to achieve the effect, the chip integrated optical phased-array system based on the transition metal sulfide coating comprises a plurality of coupling gratings, a plurality of bias electrodes and a plurality of coating films, wherein a homologous light field is input into a silicon-based waveguide through the coupling gratings, and is separated into a plurality of optical paths through an optical beam splitter; covering the surface of each optical path waveguide with a transition metal sulfide coating, externally connecting a bias electrode on the surface of the transition metal sulfide and on the different side of the cross section of the silicon-based waveguide, applying bias voltage to the transition metal sulfide coating through the externally connected electrode to form a coating film, applying voltage to each coating electrode, changing the concentration of free carriers, adjusting the refractive index of the chip integrated waveguide, and realizing precise regulation and control of the optical field phase; and multi-path optical fields are output by devices such as coupling gratings and the like, so that the function of integrating the optical phased array on the chip is realized.

Preferably, the system is coupled and input into the silica-based waveguide through a tapered optical fiber or directly enters the silica-based waveguide through a chip integrated laser.

Preferably, the system splits equally into 16 optical paths by cascading 50% -50% beam splitters.

Preferably, the system changes the free carrier concentration and causes the refractive index of the silicon-based waveguide to change, and the phase distribution of the transmission optical field changes accordingly.

Preferably, the 16 optical fields modulated by the system phase are coupled into a 4 × 4 coupling grating array and coupled out from the vertical direction.

Preferably, the system controls the transmission optical path of each optical path so that the optical fields in each optical path output the coupling grating at the same time.

Preferably, the system applies different voltages to the bias electrodes to generate characteristics such as directional deflection and mode field distribution of the output optical field.

A method of performing processing by a system such as the above-described transition metal sulfide plating based chip integrated optical phased array system, comprising:

step one, generating a plurality of paths of optical field signals, and separating a homologous optical field into a plurality of optical paths through an optical beam splitter;

secondly, regulating and controlling the phase of the optical field, namely loading the modulated electrical signals on the transition metal sulfide coating covered by the waveguide of each optical path through an external electrode;

and thirdly, outputting the optical phased array, guiding the modulated optical field to the coupling grating arranged in the array and outputting the optical phased array, and realizing the optical phased array functions of optical field deflection, wave front correction, focusing and aiming and the like through the adjustment of the phase distribution of each optical field.

Preferably, in the second step, the refractive index of the chip integrated waveguide is adjusted by changing the concentration of the free carriers, and the electro-optical phase modulation on the transmission optical field is realized, at this time, the phase distribution of the transmission optical field modulates the distribution of the electrical signals in a repeated manner.

Preferably, the method specifically comprises:

s101, designing and preparing an optical layer of a chip integrated optical phased array, wherein coupling gratings at an input end and an output end are vertically output according to a specific angle, the coupling loss is possibly small, the coupling bandwidth is as large as possible, the cross section of a transmission waveguide needs to be optimally designed to enable the transmission loss to be low and the waveguide refractive index to be sensitively changed, the waveguide length of each optical path needs to be optimally designed to take account of low transmission loss and large modulation depth and enable the light field time reaching each coupling grating to be consistent, the waveguide spatial arrangement needs to be optimally designed to enable a transition metal sulfide coating to be accurately covered as much as possible, and waveguides are not crossed;

s102, transferring the transition metal sulfide to the surface of the waveguide in a lossless manner by methods such as chemical vapor deposition, and the like, wherein the thickness of a coating needs to be optimally designed to ensure that the concentration of free carriers generated by unit voltage is maximum and the dissipation time is shortest, and the coating can be tightly attached to the upper surface of the waveguide and the side surface is only attached to the upper surface;

s103, designing and preparing a chip integrated electrode, wherein an external electrode needs to be tightly pressed on the transition metal sulfide plating layer and has minimum contact resistance, the bias electrodes can be arranged according to the specification of pins of the programmable logic circuit, the conductivity of a lead is as low as possible, crosstalk is as small as possible, and lead crossing is avoided;

s104, converting the control signal into an optical signal according to the sequence of external voltage, free carrier concentration, waveguide refractive index, transmission light field phase and output light field, and realizing the optical phased array functions of light field deflection, wave front correction, focus aiming and the like through programmable logic operation of applying the control signal to the bias electrode.

Compared with the prior art, the invention achieves the following technical effects:

firstly, the transition metal sulfide coating used by the invention can improve the free carrier dissipation speed, increase the modulation depth and modulation bandwidth, improve the detection sensitivity of conductivity, and well prevent the waveguide breakdown caused by overhigh modulation voltage;

secondly, the electro-optical modulation method does not need an ion implantation process, has simple structure and reliable performance, is highly compatible with the preparation process of other chip integrated optical devices, and is particularly suitable for realizing a hybrid integrated optoelectronic system with large system scale, complex structure function and numerous devices;

in addition, the optical phased array can realize the accurate regulation and control of a free space light field from the scale of an integrated chip, has certain programmable and reconfigurable characteristics, can promote the development of applications such as accurate tracking, adaptive optical compensation and the like to the direction of miniaturization and software definition, and realizes special applications such as laser communication, laser radar, laser detection and the like of a miniaturized platform.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 shows a schematic structural diagram of a chip integrated all-optical phased-array system based on a transition metal sulfide coating according to the present invention.

Detailed Description

Features and exemplary embodiments of various aspects of the present invention will be described in detail below, and in order to make objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.

It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.

The invention provides an embodiment of a chip integrated optical phased-array system based on a transition metal sulfide coating, which comprises a plurality of coupling gratings, a plurality of bias electrodes and a plurality of coating films, wherein a homologous light field is input into a silicon-based waveguide through the coupling gratings, and is separated into a plurality of optical paths through an optical beam splitter; covering the surface of each optical path waveguide with a transition metal sulfide coating, externally connecting a bias electrode on the surface of the transition metal sulfide and on the different side of the cross section of the silicon-based waveguide, applying bias voltage to the transition metal sulfide coating through the externally connected electrode to form a coating film, applying voltage to each coating electrode, changing the concentration of free carriers, adjusting the refractive index of the chip integrated waveguide, and realizing precise regulation and control of the optical field phase; and the multi-path light field is output by devices such as a coupling grating and the like, so that the function of the chip integrated optical phased array is realized. The coupling grating, the bias electrode and the coating film are mutually matched.

In some embodiments, the system is coupled into the silica-based waveguide through a tapered fiber or directly incident into the silica-based waveguide through a chip-integrated laser.

In some embodiments, the system splits equally to 16 optical paths by cascading 50% -50% beam splitters.

In some embodiments, the system free carrier concentration changes and causes the refractive index of the silicon-based waveguide to change, and the phase distribution of the transmission optical field changes accordingly.

In some embodiments, the system phase modulated 16 optical fields are coupled into a 4 x 4 coupled grating array and out coupled from the vertical direction.

In some embodiments, the system controls the transmission optical path of each optical path so that the optical fields in each optical path output the coupling grating at the same time.

In some embodiments, the system generates directional deflection, mode field distribution, etc. characteristics of the output optical field by applying different voltages to the bias electrodes.

As shown in fig. 1, this example provides an optical phased array based on a transition metal sulfide plating prepared by a silicon on insulator process: the homologous light field is input into the silicon-based waveguide through the coupling grating (the silicon-based waveguide is input through the tapered fiber coupling or is directly input into the silicon-based waveguide through the chip integrated laser), and is separated into 16 optical paths in equal proportion through cascading 50% -50% of beam splitters; the external electrode is grown on the surface of the transition metal sulfide and is positioned on the different side of the cross section of the silicon-based waveguide, bias voltage can be applied to the transition metal sulfide coating through the external electrode, the concentration of free carriers changes at the moment, the refractive index of the silicon-based waveguide changes, and the phase distribution of a transmission light field changes accordingly; the phase modulated 16 optical fields are coupled into a 4 x 4 coupled grating array and out from the vertical. By controlling the transmission optical path of each optical path, the optical fields in each optical path can output the coupling grating at the same time; by applying different voltages to the bias electrodes, the characteristics of directional deflection, mode field distribution and the like of an output optical field can be generated. For example, when the control voltages applied by all the bias electrodes are the same, ideally the phases of the optical paths are the same, the on-chip integrated optical phased array will output the same phase supermode; when the control voltage applied by the No. 1-8 bias electrodes and the control voltage applied by the No. 9-16 bias electrodes are just different by half-wave voltage (namely, half-wave phase difference is introduced in the light field), the integrated phased array of the chip outputs the different-phase supermode.

The embodiment also provides a chip integrated optical phased array system based on a transition metal sulfide coating, which comprises three parts:

1. generating a plurality of paths of optical field signals, namely separating a homologous optical field into a plurality of optical paths through an optical beam splitter;

2. optical field phase regulation, namely loading a modulated electrical signal on a transition metal sulfide coating covered by each optical path waveguide through an external electrode, regulating the refractive index of the integrated waveguide of the chip by changing the concentration of free carriers, and realizing electro-optic phase modulation on a transmission optical field, wherein the phase distribution of the transmission optical field repeatedly modulates the distribution of the electrical signal;

3. and outputting the optical phased array, namely guiding the modulated optical field to the coupling grating arranged in the array and outputting the optical phased array, and realizing optical phased array functions such as optical field deflection, wavefront correction, focusing and aiming and the like by adjusting the phase distribution of each optical field.

The embodiment also provides a method for executing the processing of the chip integrated optical phased array system based on the transition metal sulfide coating, which comprises the following steps:

step one, generating multipath light field signals, and separating a homologous light field into a plurality of optical paths through an optical beam splitter;

secondly, regulating and controlling the phase of the optical field, and loading a modulated electrical signal on the transition metal sulfide coating covered by the waveguide of each optical path through an external electrode;

and thirdly, outputting the optical phased array, guiding the modulated optical field to the coupling grating arranged in the array and outputting the optical phased array, and realizing the optical phased array functions of optical field deflection, wave front correction, focusing and aiming and the like through the adjustment of the phase distribution of each optical field.

In some embodiments, the step two is to adjust the refractive index of the chip integrated waveguide by changing the concentration of the free carriers and to realize electro-optical phase modulation of the transmitted optical field, wherein the phase distribution of the transmitted optical field modulates the electrical signal distribution in a repeated way.

In some embodiments, the method specifically comprises:

s101, designing and preparing an optical layer of a chip integrated optical phased array, wherein coupling gratings at an input end and an output end are vertically output according to a specific angle, the coupling loss is possibly small, the coupling bandwidth is as large as possible, the cross section of a transmission waveguide needs to be optimally designed to enable the transmission loss to be low and the waveguide refractive index to be sensitively changed, the waveguide length of each optical path needs to be optimally designed to take account of low transmission loss and large modulation depth and enable the light field time reaching each coupling grating to be consistent, the waveguide spatial arrangement needs to be optimally designed to enable a transition metal sulfide coating to be accurately covered as much as possible, and waveguides are not crossed;

s102, transferring the transition metal sulfide to the surface of the waveguide in a lossless manner by methods such as chemical vapor deposition, and the like, wherein the thickness of a coating needs to be optimally designed to enable the concentration of free carriers generated by unit voltage to be maximum and the dissipation time to be shortest, and the coating can be tightly attached to the upper surface of the waveguide and the side surface only is attached to the upper surface;

s103, designing and preparing a chip integrated electrode, wherein an external electrode needs to be tightly pressed on the transition metal sulfide plating layer and has minimum contact resistance, the bias electrodes can be arranged according to the specification of pins of the programmable logic circuit, the conductivity of a lead is as low as possible, crosstalk is as small as possible, and lead crossing is avoided;

and S104, converting the control signal into an optical signal according to the sequence of external voltage, free carrier concentration, waveguide refractive index, transmission light field phase and output light field, and realizing the optical phased array functions of light field deflection, wave front correction, focusing and aiming and the like through programmable logic operation of applying the control signal on the bias electrode.

In some embodiments, the method specifically comprises:

firstly, designing and preparing an optical layer of a chip integrated optical phased array, wherein coupling gratings at an input end and an output end are vertically output according to a specific angle, the coupling loss is as small as possible, the coupling bandwidth is as large as possible, the cross section of a transmission waveguide needs to be optimally designed to ensure that the transmission loss is low and the refractive index of the waveguide is sensitively changed, the waveguide length of each optical path needs to be optimally designed to take account of low transmission loss and large modulation depth and ensure that the light field time reaching each coupling grating is consistent, the waveguide spatial arrangement needs to be optimally designed to ensure that a transition metal sulfide coating is accurately covered as much as possible, and waveguides are not crossed as much as possible; secondly, transferring the transition metal sulfide to the surface of the waveguide in a lossless manner by methods such as chemical vapor deposition, and the like, wherein the thickness of a coating needs to be optimally designed to ensure that the concentration of free carriers generated by unit voltage is maximum and the dissipation time is shortest, and the coating can be tightly attached to the upper surface and the side surface of the waveguide or only attached to the upper surface; thirdly, designing and preparing a chip integrated electrode, wherein an external electrode needs to be tightly pressed on the transition metal sulfide coating and has the minimum contact resistance, the bias electrodes can be arranged according to the specification of the pins of the programmable logic circuit, the conductivity of the lead is as low as possible, the crosstalk is as small as possible, and the lead intersection is avoided; finally, the control signal can be converted into an optical signal according to the sequence of external voltage → free carrier concentration → waveguide refractive index → transmission light field phase → output light field, and the optical phased array functions of light field deflection, wavefront correction, focusing and aiming and the like are realized through programmable logic operation of applying the control signal on the bias electrode.

The invention also provides an embodiment of the chip integrated optical phased array system based on the transition metal sulfide coating, which separates a homologous light field into a plurality of optical paths through an optical beam splitter; covering the surface of each optical path waveguide with a transition metal sulfide coating, applying voltage to each coating electrode, changing the concentration of free carriers, adjusting the refractive index of the chip integrated waveguide, and realizing precise regulation and control of the optical field phase; and multi-path optical fields are output by devices such as coupling gratings and the like, so that the function of integrating the optical phased array on the chip is realized. The invention provides a flexibly adjustable optical field regulation and control means, avoids the problem of waveguide breakdown caused by overhigh modulation voltage, has simple preparation process and higher modulation speed, and can provide important reference for a chip integrated optoelectronic system and various applications based on the microwave photon technology.

In some embodiments, the chip integrated waveguide can be manufactured by a standard chip integrated optical circuit process, has a certain degree of freedom of structural design, can efficiently and losslessly transmit an optical field, and can generate refractive index change under the action of free carriers, and the material platform used by the chip integrated waveguide includes but is not limited to silicon on insulator, hydrogen-loaded amorphous silicon, silicon nitride, silicon carbide, chalcogenide glass, high-refractive-index quartz, gallium arsenic aluminum in three five groups, indium phosphide in three five groups, and the like, and can adopt a single material integration method or a multi-material mixed integration method.

In some embodiments, the transition metal sulfide plating layer can control parameters through a growth process, can be transferred to the surface of a chip integrated waveguide in a lossless manner through a standard process and can be tightly attached, an electro-optic parameter can be accurately regulated by taking a crystal structure and a layer thickness as degrees of freedom, a photoelectric effect can be generated, namely, a free carrier is generated under the action of an optical field, an external electrode can be stably grown as a substrate, the free carrier can be generated, the concentration of the external electrode is sensitively related to the conductivity and the refractive index, transition metal sulfides include but are not limited to molybdenum disulfide, tungsten sulfide and the like, and the structural parameters and the preparation process of the transition metal sulfide plating layer are not limited.

In some embodiments, the optical phased array changes the concentration of free carriers of a transition metal sulfide coating through external voltage, the refractive index of a chip integrated waveguide covered by the coating changes and influences the phase distribution of a transmission light field, and programmable logic is applied to each optical path through an external electrode and changes the phase distribution of an output light field array to realize the functions of the optical phased array such as light field deflection, wave front correction, focusing and aiming; the structure of the optical phased array output array is not limited, the structure parameters of the waveguide and the electrode are not limited, and the specific implementation mode, the specific content of the control signal and the specific function of the optical phased array of the programmable logic circuit are not limited.

Compared with the prior art, the invention has the following advantages:

firstly, the transition metal sulfide coating used by the invention can improve the free carrier dissipation speed, increase the modulation depth and modulation bandwidth, improve the detection sensitivity of conductivity, and well prevent the waveguide breakdown caused by overhigh modulation voltage;

secondly, the electro-optical modulation method does not need an ion implantation process, has simple structure and reliable performance, is highly compatible with the preparation process of other chip integrated optical devices, and is particularly suitable for realizing a hybrid integrated optoelectronic system with large system scale, complex structure function and numerous devices;

in addition, the optical phased array can realize the accurate regulation and control of a free space light field from the scale of an integrated chip, has certain programmable and reconfigurable characteristics, can promote the development of applications such as accurate tracking, adaptive optical compensation and the like to the direction of miniaturization and software definition, and realizes special applications such as laser communication, laser radar, laser detection and the like of a miniaturized platform.

For convenience of description, the above devices are described as being divided into various units by function, respectively. Of course, the functionality of the units may be implemented in one or more software and/or hardware when implementing the present application.

As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

In a typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.

The memory may include forms of volatile memory in a computer readable medium, random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). Memory is an example of a computer-readable medium.

Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static Random Access Memory (SRAM), dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.

It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of other like elements in a process, method, article, or apparatus comprising the element.

The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.

The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (10)

1. A chip integrated optical phased-array system based on a transition metal sulfide coating is composed of a plurality of coupling gratings, a plurality of bias electrodes and a plurality of coating films, wherein a homologous light field is input into a silicon-based waveguide through the coupling gratings, and is separated into a plurality of optical paths through an optical beam splitter; covering the surface of each optical path waveguide with a transition metal sulfide coating, externally connecting a bias electrode on the surface of the transition metal sulfide and on the different side of the cross section of the silicon-based waveguide, applying bias voltage to the transition metal sulfide coating through the externally connected electrode to form a coating film, applying voltage to each coating electrode, changing the concentration of free carriers, adjusting the refractive index of the chip integrated waveguide, and realizing precise regulation and control of the optical field phase; and multi-path optical fields are output by devices such as coupling gratings and the like, so that the function of integrating the optical phased array on the chip is realized.

2. The transition metal sulfide coating-based chip integrated optical phased array system of claim 1, wherein the system is coupled into the silica-based waveguide through a tapered fiber or is directly incident into the silica-based waveguide through a chip integrated laser.

3. The transition metal sulfide plating based chip integrated optical phased array system as claimed in claim 1, wherein the system is split equally into 16 optical paths by cascading 50% -50% beam splitters.

4. The transition metal sulfide coating-based chip integrated optical phased array system as claimed in claim 1, wherein the system free carrier concentration changes and causes the silicon-based waveguide refractive index to change, and the phase distribution of the transmission optical field changes accordingly.

5. The transition metal sulfide plating based chip integrated optical phased array system of claim 1, wherein the system phase modulated 16 optical fields are coupled into a 4 x 4 coupled grating array and out from the vertical direction.

6. The integrated optical phased array system based on transition metal sulfide coating of claim 1, wherein the system controls the transmission optical path of each optical path to make the optical field in each optical path output the coupling grating at the same time.

7. The integrated optical phased array system based on transition metal sulfide coating of claim 1, characterized in that the system generates the characteristics of direction deflection, mode field distribution and the like of the output optical field by applying different voltages to the bias electrodes.

8. A method of performing processing by the system of transition metal sulfide plating based on-chip integrated optical phased array systems of claims 1-7, comprising:

step one, generating a plurality of paths of optical field signals, and separating a homologous optical field into a plurality of optical paths through an optical beam splitter;

secondly, regulating and controlling the phase of the optical field, and loading a modulated electrical signal on the transition metal sulfide coating covered by the waveguide of each optical path through an external electrode;

and thirdly, outputting the optical phased array, guiding the modulated optical field to the coupling grating arranged in the array and outputting the optical phased array, and realizing the optical phased array functions of optical field deflection, wave front correction, focusing and aiming and the like through the adjustment of the phase distribution of each optical field.

9. The method according to claim 8, wherein in step two, the refractive index of the chip integrated waveguide is adjusted by changing the free carrier concentration, and electro-optical phase modulation on the transmitted optical field is realized, and then the phase distribution of the transmitted optical field modulates the electrical signal distribution repeatedly.

10. The method according to claim 8 or 9, characterized in that the method comprises in particular:

s101, designing and preparing an optical layer of a chip integrated optical phased array, wherein coupling gratings at an input end and an output end are vertically output according to a specific angle, the coupling loss is possibly small, the coupling bandwidth is as large as possible, the cross section of a transmission waveguide needs to be optimally designed to enable the transmission loss to be low and the waveguide refractive index to be sensitively changed, the waveguide length of each optical path needs to be optimally designed to take account of low transmission loss and large modulation depth and enable the light field time reaching each coupling grating to be consistent, the waveguide spatial arrangement needs to be optimally designed to enable a transition metal sulfide coating to be accurately covered as much as possible, and waveguides are not crossed;

s102, transferring the transition metal sulfide to the surface of the waveguide in a lossless manner by methods such as chemical vapor deposition, and the like, wherein the thickness of a coating needs to be optimally designed to enable the concentration of free carriers generated by unit voltage to be maximum and the dissipation time to be shortest, and the coating can be tightly attached to the upper surface of the waveguide and the side surface only is attached to the upper surface;

s103, designing and preparing a chip integrated electrode, wherein an external electrode needs to be tightly pressed on the transition metal sulfide plating layer and has minimum contact resistance, the bias electrodes can be arranged according to the specification of pins of the programmable logic circuit, the conductivity of a lead is as low as possible, crosstalk is as small as possible, and lead crossing is avoided;

and S104, converting the control signal into an optical signal according to the sequence of external voltage, free carrier concentration, waveguide refractive index, transmission light field phase and output light field, and realizing the optical phased array functions of light field deflection, wave front correction, focusing and aiming and the like through programmable logic operation of applying the control signal on the bias electrode.

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