CN115388786A - Method for detecting thickness of damaged layer of cadmium zinc telluride wafer - Google Patents
Method for detecting thickness of damaged layer of cadmium zinc telluride wafer Download PDFInfo
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- CN115388786A CN115388786A CN202210941987.1A CN202210941987A CN115388786A CN 115388786 A CN115388786 A CN 115388786A CN 202210941987 A CN202210941987 A CN 202210941987A CN 115388786 A CN115388786 A CN 115388786A
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- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000007797 corrosion Effects 0.000 claims abstract description 51
- 238000005260 corrosion Methods 0.000 claims abstract description 51
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 230000008014 freezing Effects 0.000 claims abstract description 15
- 238000007710 freezing Methods 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 238000003698 laser cutting Methods 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 19
- 238000003756 stirring Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 abstract description 12
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 91
- 230000008901 benefit Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to a method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer, which comprises the following steps: the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha; step two: carrying out corrosion liquid corrosion treatment on the section; step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha. The embodiment of the invention is beneficial to obtaining more accurate tellurium-zinc-cadmium wafer damage layer thickness data, can improve the precision of damage layer thickness detection and has high practical value.
Description
Technical Field
The invention relates to the technical field of processing of cadmium zinc telluride wafers, in particular to a method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer.
Background
Cadmium Zinc Telluride (CZT) crystal is a novel ternary compound semiconductor, has high resistivity and large forbidden bandwidth (the forbidden bandwidth continuously changes from 1.4eV to 2.26eV along with the change of doped zinc content) due to excellent performance, has very good differentiation rate for X-rays and gamma-rays, and can be used in various detectors and other devices in the fields of astronomy, medicine, military and the like. Meanwhile, the structure of the material is matched with Mercury Cadmium Telluride (MCT) and therefore the material is the best substrate material for the MCT.
The tellurium-zinc-cadmium substrate material is prepared by cutting, chamfering, grinding, polishing, cleaning and other procedures of a grown tellurium-zinc-cadmium crystal, wherein a certain damage layer is introduced to the surface of a substrate by a grinding process, the damage layer on the surface of the substrate needs to be removed by a polishing process, and indexes such as substrate flatness, surface roughness and the like are optimized.
At present, deep research on controlling the damaged layer of the cadmium zinc telluride wafer is rarely reported at home and abroad, and the method for detecting the thickness of the damaged layer is the most used crystal double-crystal half-peak width method at present. The wafers were continuously thinned by low loss chemical polishing and the bimorph half-peak widths of the wafers were measured and recorded, respectively, until the pattern changed from initially being broader to significantly sharper with substantially constant values. And finally, calculating the thickness of a damage layer caused by a certain processing technology to the wafer by accumulating the removal thickness of the wafer. This method has the greatest disadvantage with other high-precision devices such as tomography and the like, namely complicated sample preparation, expensive devices and unsuitability for rapid and routine detection of the damaged layer. In addition, the damage layer is not even in the distribution of the surface, and a single point or a certain area can only play a reference role in the thickness of the damage layer of the whole wafer. Another method is to illustrate the thickness of the damaged layer on the wafer surface by examining the surface roughness (ra.) of the sample using an atomic force microscope. The method can only detect the thickness of the highly deformed and cracked area of the crystal surface, and cannot accurately judge the thickness of the subsurface damage and the extension defect. With the rapid development of the semiconductor industry, the research on the damaged layer of the wafer is more and more focused. The invention patent CN103017713A proposes a method for detecting the thickness of a damaged layer of a chemical hard and brittle material by utilizing a multiple chemical corrosion method, and the principle is that the thickness of the damaged layer of a wafer is judged by utilizing the difference of corrosion rates of a damaged area and a non-damaged area to the same corrosive liquid, but repeated corrosion for multiple times has long time consumption, low efficiency and large error, and is not suitable for rapid conventional detection. Meanwhile, compared with a hard brittle optical material, the soft brittle CdZnTe crystal material has different properties in the aspect of generation of a damaged layer, and the corrosive liquid system is completely different and cannot be used for work.
Disclosure of Invention
(1) Technical problem to be solved
The embodiment of the invention provides a method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer, which comprises the steps of carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting out a cross section; carrying out corrosion liquid corrosion treatment on the section; after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, and the image information of the cross section is obtained under the condition of enlarging the view field by using a fluorescent recognition device. The embodiment of the invention is beneficial to obtaining more accurate tellurium-zinc-cadmium wafer damage layer thickness data, can improve the precision of damage layer thickness detection and has high practical value.
(2) Technical scheme
The embodiment of the invention provides a method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer, which comprises the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
Further, the temperature of the low-temperature freezing treatment of the cadmium zinc telluride wafer in the first step is not higher than-20 ℃.
Further, the inclination angle alpha of the section of the cadmium zinc telluride wafer ranges from 0 degrees to 75 degrees.
Further, after the first step, the cross section of the cadmium zinc telluride wafer needs to be polished, cleaned and dried in sequence.
Further, the etching solution etching treatment method of the second step specifically includes: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, and cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 5-40 wt%, and the corrosion treatment time is 5-30 min.
Furthermore, when the cadmium zinc telluride wafer is subjected to the etching treatment by the etching solution, the surfaces except the cross section need to be protected from the etching solution.
Further, the length L of the damaged area is the product of the number of image pixels of the cross section and the size of the pixels.
Further, the damaged area is a region with cracks in the cross section.
Further, the fluorescence recognition device is a fluorescence recognition camera.
And further, after the second step is finished, the tellurium-zinc-cadmium wafer is placed at normal temperature and stands for not less than 1h.
(3) Advantageous effects
In the embodiment of the invention, the tellurium-zinc-cadmium wafer is firstly frozen at low temperature, so that the structural strength of the tellurium-zinc-cadmium wafer can be improved, the laser cutting mode is adopted to cut the section of the tellurium-zinc-cadmium wafer, the advantages of small cutting seam, high precision and smooth cutting seam are achieved, and the possibility of edge breakage or damage of the tellurium-zinc-cadmium wafer can be reduced. Then, in the embodiment of the invention, the cross section is subjected to corrosion treatment by the corrosive solution, and the corrosion treatment of the cross section mainly adopts full stirring and reaction in the hydrofluoric acid solution, and the hydrofluoric acid solution has the advantage of strong corrosivity and can fully expose the damaged layer. And then, coating a layer of fluorescent agent on the cross section, and acquiring the image information of the cross section by using a fluorescence recognition device under an enlarged view field, so that clearer cross section image information can be acquired, and more accurate tellurium-zinc-cadmium wafer damage layer thickness data can be acquired. Finally, the inclination angle of the cross section relative to the tangent plane direction is alpha, so that the length of the damage layer can be increased in the inclination direction, the accuracy of the detection of the thickness of the damage layer can be improved, and the practical value is high.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flowchart illustrating a method for detecting a thickness of a damaged layer of a CdZnTe wafer according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a CdZnTe wafer according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following detailed description of the embodiments and the accompanying drawings are provided to illustrate the principles of the invention and are not intended to limit the scope of the invention, i.e., the invention is not limited to the embodiments described, but covers any modifications, alterations, and improvements in the parts, components, and connections without departing from the spirit of the invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
The present application will be described in detail with reference to the accompanying drawings 1-2, in conjunction with an embodiment.
Example one
Referring to fig. 1, a method for detecting a thickness of a damaged layer of a cadmium zinc telluride wafer according to an embodiment of the present invention includes the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
Specifically, the temperature of the low-temperature freezing treatment of the cadmium zinc telluride wafer in the first step is lower than-20 ℃. The inclination angle alpha of the section of the cadmium zinc telluride wafer is 0 deg. After the first step, the cross section of the cadmium zinc telluride wafer is required to be polished, cleaned and dried in sequence. The etching solution etching treatment method of the second step specifically comprises the following steps: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 5wt%, and the corrosion treatment time is 30min. When the cadmium zinc telluride wafer is subjected to corrosion treatment by the corrosion solution, the surfaces except the section need to be subjected to protection treatment to isolate the corrosion solution. The length L of the damage area is the product of the number of image pixels of the cross section and the size of the pixels. The damaged area is a region with cracks in the cross section. The fluorescence identification device is a fluorescence identification camera. And after the second step is finished, standing the cadmium zinc telluride wafer for 1h at normal temperature.
Example two
Referring to fig. 1, a method for detecting a thickness of a damaged layer of a cadmium zinc telluride wafer according to an embodiment of the present invention includes the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
Specifically, the temperature of the low-temperature freezing treatment of the cadmium zinc telluride wafer in the first step is lower than-25 ℃. The inclination angle alpha of the section of the cadmium zinc telluride wafer is 30 degrees. After the first step, the section of the cadmium zinc telluride wafer is required to be sequentially polished, cleaned and dried. The etching solution etching treatment method of the second step specifically comprises the following steps: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 10wt%, and the corrosion treatment time is 25min. When the cadmium zinc telluride wafer is subjected to corrosion treatment by the corrosion solution, the surfaces except the section need to be subjected to protection treatment to isolate the corrosion solution. The length L of the damage region is the product of the number of image pixels of the cross section and the size of the pixels. The damaged area is a region with cracks in the cross section. The fluorescence recognition device is a fluorescence recognition camera. And after the second step is finished, standing the cadmium zinc telluride wafer for 2 hours at normal temperature.
EXAMPLE III
Referring to fig. 1, a method for detecting a thickness of a damaged layer of a cadmium zinc telluride wafer according to an embodiment of the present invention includes the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
Specifically, the temperature of the low-temperature freezing treatment of the cadmium zinc telluride wafer in the first step is lower than-30 ℃. The inclination angle alpha of the section of the cadmium zinc telluride wafer is 45 degrees. After the first step, the section of the cadmium zinc telluride wafer is required to be sequentially polished, cleaned and dried. The etching solution etching treatment method of the second step specifically comprises the following steps: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 20wt%, and the corrosion treatment time is 15min. When the cadmium zinc telluride wafer is subjected to corrosion treatment by the corrosion solution, the surfaces except the section need to be subjected to protection treatment to isolate the corrosion solution. The length L of the damage region is the product of the number of image pixels of the cross section and the size of the pixels. The damaged area is a region with cracks in the cross section. The fluorescence recognition device is a fluorescence recognition camera. And after the second step is finished, standing the cadmium zinc telluride wafer for 3 hours at normal temperature.
Example four
Referring to fig. 1, a method for detecting a thickness of a damaged layer of a cadmium zinc telluride wafer according to an embodiment of the present invention includes the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
Specifically, the temperature of the low-temperature freezing treatment of the cadmium zinc telluride wafer in the first step is lower than-35 ℃. The inclination angle alpha of the section of the cadmium zinc telluride wafer is 75 degrees. After the first step, the cross section of the cadmium zinc telluride wafer is required to be polished, cleaned and dried in sequence. The etching solution etching treatment method of the second step specifically comprises the following steps: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 40wt%, and the corrosion treatment time is 5min. When the cadmium zinc telluride wafer is subjected to corrosion treatment by the corrosion solution, the surfaces except the section need to be subjected to protection treatment to isolate the corrosion solution. The length L of the damage region is the product of the number of image pixels of the cross section and the size of the pixels. The damaged area is a region with cracks in the cross section. The fluorescence recognition device is a fluorescence recognition camera. And after the second step is finished, standing the cadmium zinc telluride wafer for 4 hours at normal temperature.
In the embodiment of the invention, the cadmium zinc telluride wafer is firstly frozen at low temperature, so that the activity of electrons in the cadmium zinc telluride wafer can be reduced, the structural strength of the cadmium zinc telluride wafer is improved, and the edge breakage is not easy to occur during the slicing treatment. Meanwhile, the embodiment of the invention adopts a laser cutting mode to cut the cadmium zinc telluride wafer into the cross section, and compared with the traditional mechanical cutting mode, the laser cutting mode has the advantages of small cutting slit, high precision and smooth cutting slit, and can reduce the possibility of edge breakage or damage of the cadmium zinc telluride wafer.
Then, in the embodiment of the invention, the cross section is subjected to corrosion treatment by the corrosive solution, and the corrosion treatment of the cross section mainly adopts full stirring and reaction in the hydrofluoric acid solution, and the hydrofluoric acid solution has the advantage of strong corrosivity and can fully expose the damaged layer. In addition, the second step of the embodiment of the invention is cleaned and dried before and after the second step, so that a clean cadmium zinc telluride wafer damage layer can be fully obtained. In addition, in order to obtain the damaged layer thickness data of the cross section of the cadmium zinc telluride wafer in the embodiment of the invention, only the cross section of the cadmium zinc telluride wafer is thinned on one side, and the other surfaces do not react with the hydrofluoric acid solution.
Then, after the etching treatment, the section is coated with a layer of fluorescent agent, the fluorescent identification device is used for obtaining the image information of the section under the enlarged view field, the appearance of the section part can be fully displayed in a fluorescent mode after the section is coated with the fluorescent agent, the fluorescence can enhance the display brightness, the fluorescent identification device can be used for obtaining clearer section image information under the enlarged view field, and more accurate tellurium-zinc-cadmium wafer damage layer thickness data can be obtained.
Finally, in the embodiment of the present invention, the inclination angle of the cross section with respect to the tangent plane direction is α, so that the length of the damaged layer can be increased in the inclined direction. Therefore, as shown in fig. 2, the actual length of the damaged layer can be calculated by calculating the common D = lssin α. The embodiment of the invention can improve the accuracy of detecting the thickness of the damaged layer by designing the oblique angle alpha, and has high practical value.
In summary, in the embodiments of the present invention, the cdte wafer is first subjected to the low temperature freezing process, so as to improve the structural strength of the cdte wafer, and the laser cutting method is adopted to cut the cdte wafer into sections, so that the method has the advantages of small cutting seams, high precision and smooth cutting seams, and can reduce the possibility of edge breakage or damage of the cdte wafer. Then, in the embodiment of the invention, the cross section is subjected to corrosion treatment by the corrosive solution, and the corrosion treatment of the cross section mainly adopts full stirring and reaction in the hydrofluoric acid solution, and the hydrofluoric acid solution has the advantage of strong corrosivity and can fully expose the damaged layer. And then, coating a layer of fluorescent agent on the cross section, and acquiring the image information of the cross section by using a fluorescence recognition device under an enlarged view field, so that clearer cross section image information can be acquired, and more accurate tellurium-zinc-cadmium wafer damage layer thickness data can be acquired. Finally, the inclination angle of the cross section relative to the tangent plane direction is alpha, so that the length of the damage layer can be increased in the inclination direction, the accuracy of the detection of the thickness of the damage layer can be improved, and the practical value is high.
It should be clear that the embodiments in this specification are described in a progressive manner, and the same or similar parts in the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. For embodiments of the method, reference is made to the description of the apparatus embodiments in part. The present invention is not limited to the specific steps and structures described above and shown in the drawings. Also, a detailed description of known process techniques is omitted herein for the sake of brevity.
The above description is only an example of the present application and is not limited to the present application. Various modifications and alterations to this application will become apparent to those skilled in the art without departing from the scope of this invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. A method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer is characterized by comprising the following steps:
the method comprises the following steps: carrying out low-temperature freezing treatment on the cadmium zinc telluride wafer, and cutting a section of the cadmium zinc telluride wafer by adopting a laser cutting mode, wherein the inclined angle of the section relative to the section direction is alpha;
step two: carrying out corrosion liquid corrosion treatment on the section;
step three: after the corrosion treatment, a layer of fluorescent agent is coated on the cross section, the image information of the cross section is obtained under the condition of enlarging a view field by using a fluorescence recognition device, and the length L of a damaged area in the image is calculated, wherein the thickness D = Lsin alpha.
2. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein the temperature of the low temperature freezing treatment of the cadmium zinc telluride wafer in the first step is not higher than-20 ℃.
3. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein the inclination angle α of the cross section of the cadmium zinc telluride wafer is in the range of 0 ° to 75 °.
4. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein the first step is followed by polishing, cleaning and drying the cross section of the cadmium zinc telluride wafer.
5. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein the etching solution etching treatment method of the second step specifically comprises: fully stirring and reacting the cross section of the cadmium zinc telluride wafer in a hydrofluoric acid solution, thinning the single side of the cross section of the cadmium zinc telluride wafer, and cleaning and drying the cadmium zinc telluride wafer after the reaction is finished, wherein the concentration of the hydrofluoric acid solution is 5-40 wt%, and the corrosion treatment time is 5-30 min.
6. The method as claimed in claim 5, wherein when the CdZnTe wafer is subjected to the etching treatment with the etching solution, the surfaces of the CdZnTe wafer except the cross section are protected from the etching solution.
7. The method as claimed in claim 1, wherein the length L of the damaged area is the product of the number of image pixels and the size of the pixels.
8. The method as claimed in claim 1, wherein the damaged region is a region with cracks in its cross section.
9. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein the fluorescence recognition device is a fluorescence recognition camera.
10. The method for detecting the thickness of the damaged layer of the cadmium zinc telluride wafer as set forth in claim 1, wherein after the second step is finished, the cadmium zinc telluride wafer is left to stand at normal temperature for not less than 1 hour.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103988289A (en) * | 2011-12-16 | 2014-08-13 | 旭化成电子材料株式会社 | Semiconductor chip with attached anisotropic electroconductive film, semiconductor wafer with attached anisotropic electroconductive film, and semiconductor device |
| CN104034568A (en) * | 2014-06-13 | 2014-09-10 | 北京工业大学 | Preparation method of sample for detecting sub-surface damage depth of ultra-thin silicon wafer |
| CN106546619A (en) * | 2016-11-24 | 2017-03-29 | 中国电子科技集团公司第十研究所 | A kind of grinding and polishing damage measure method of cadmium-zinc-teiluride base mercury cadmium telluride thin film |
| CN107543837A (en) * | 2017-08-25 | 2018-01-05 | 郑州磨料磨具磨削研究所有限公司 | The detection method of silicon chip damaging layer after a kind of emery wheel fine grinding |
| CN114322864A (en) * | 2021-12-09 | 2022-04-12 | 武汉钢铁有限公司 | Three-dimensional measurement method for interlayer spacing of pearlite sheet |
| CN114464571A (en) * | 2021-05-14 | 2022-05-10 | 陈政委 | Scribing method of gallium oxide polished wafer |
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| CN103988289A (en) * | 2011-12-16 | 2014-08-13 | 旭化成电子材料株式会社 | Semiconductor chip with attached anisotropic electroconductive film, semiconductor wafer with attached anisotropic electroconductive film, and semiconductor device |
| CN104034568A (en) * | 2014-06-13 | 2014-09-10 | 北京工业大学 | Preparation method of sample for detecting sub-surface damage depth of ultra-thin silicon wafer |
| CN106546619A (en) * | 2016-11-24 | 2017-03-29 | 中国电子科技集团公司第十研究所 | A kind of grinding and polishing damage measure method of cadmium-zinc-teiluride base mercury cadmium telluride thin film |
| CN107543837A (en) * | 2017-08-25 | 2018-01-05 | 郑州磨料磨具磨削研究所有限公司 | The detection method of silicon chip damaging layer after a kind of emery wheel fine grinding |
| CN114464571A (en) * | 2021-05-14 | 2022-05-10 | 陈政委 | Scribing method of gallium oxide polished wafer |
| CN114322864A (en) * | 2021-12-09 | 2022-04-12 | 武汉钢铁有限公司 | Three-dimensional measurement method for interlayer spacing of pearlite sheet |
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