CN115388762A - CD measuring equipment of wafer and corresponding CD measuring method - Google Patents
CD measuring equipment of wafer and corresponding CD measuring method Download PDFInfo
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- CN115388762A CN115388762A CN202210879881.3A CN202210879881A CN115388762A CN 115388762 A CN115388762 A CN 115388762A CN 202210879881 A CN202210879881 A CN 202210879881A CN 115388762 A CN115388762 A CN 115388762A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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Abstract
The invention provides a CD measuring device of a wafer, which comprises a control system, an illumination system, an imaging system and an image processing system, and further comprises: the motion control transmission system is configured to perform motion control transmission on the wafer to be detected, so that the wafer is subjected to at least first alignment and second alignment; the focusing system is fixedly connected with the imaging system and provided with a positioning analysis system, so that the imaging system can focus according to a positioning analysis result. The invention also provides a corresponding CD measuring method.
Description
Technical Field
The invention belongs to the field of semiconductor equipment measurement, and particularly relates to a CD measuring device of a full-automatic nanoscale chip.
Background
In Integrated Circuit (IC) manufacturing, a photoresist layer is typically coated on a surface of a semiconductor wafer, and then the photoresist layer is exposed through a mask. And then, carrying out a post-exposure baking step to change the physical properties of the photoresist, thereby facilitating subsequent processing. Then, an after-development inspection (ADI) is performed to check the critical dimension of the photoresist by using a metrology system to determine whether the photoresist meets the specification. If the photoresist meets the specification, the pattern is etched or transferred and the photoresist is stripped. Then, post-etching inspection (AEI) is performed on the wafer.
Due to the increasing demand for very-large-scale integration (VLSI) micro-scale dimensions. Therefore, the photolithography process must accurately control the Critical Dimension (CD) of the photoresist pattern to prevent the threshold voltage (threshold voltage) and the line resistance value related to the pattern dimension variation from varying, which eventually reduces the circuit performance.
Critical Dimension (CD) is an important parameter in semiconductor manufacturing processes, and measurement of CD is an important means for monitoring whether the chip manufacturing process is up to standard. In general, the main ways of detecting Critical Dimensions (CD) include CD SEM (critical dimension scanning electron microscope) and optical. CD SEM (critical dimension scanning electron microscope) and optical approaches have their respective application scenarios. Generally, domestic semiconductor processes will reduce the dependence on CD SEM as much as possible and perform CD measurement in combination with optical methods, so as to reduce the demand for monopolistic foreign devices. However, the line width of the current production line in the semiconductor process generally reaches 300nm, and the measurement size of the CD measurement device using the optical method is still about 400nm at present, which cannot meet the current development requirement.
Based on the above, the present application provides a technical solution to solve the above technical problems.
Disclosure of Invention
A first objective of the present invention is to provide a CD measuring apparatus for a wafer with a line width of 300nm in a semiconductor process.
A second objective of the present invention is to obtain a method for measuring CD of a wafer suitable for 300nm line width semiconductor process.
A third objective of the present invention is to obtain a use of a CD metrology apparatus for wafers suitable for 300nm linewidth semiconductor processing.
A fourth object of the present invention is to obtain an exposure apparatus having a CD measuring apparatus suitable for a wafer of 300nm line width semiconductor process.
A first aspect of the present invention provides a CD metrology apparatus for a wafer, comprising a control system, an illumination system, an imaging system and an image processing system, the CD metrology apparatus further comprising:
the motion control transmission system is configured to perform motion control transmission on the wafer to be detected, so that the wafer is subjected to at least first alignment and second alignment;
the focusing system is fixedly connected with the imaging system and provided with a positioning analysis system, so that the imaging system can focus according to a positioning analysis result.
In a preferred embodiment of the invention, the focusing system further comprises a controller configured to secure the imaging system to the controller of the focusing system.
In a preferred embodiment of the invention, in the focusing system, the positioning analysis system is configured to send the positioning analysis result to the control system. Such that the control system controls the imaging system to focus in the Z-axis.
In a preferred embodiment of the present invention, the focusing system is configured to perform a positioning analysis using a positioning analysis system after the wafers of the motion-controlled transport system are aligned to a desired requirement.
In a preferred embodiment of the present invention, the positioning analysis system in the focusing system comprises a laser or infrared positioning analysis system.
Preferably, the positioning analysis system in the focusing system comprises a laser positioning analysis system.
In a preferred embodiment of the present invention, the motion control transfer system includes a robot device for transferring the wafer, a border device for performing a first alignment on the wafer, and a wafer alignment stage for performing a second alignment on the wafer.
A second aspect of the present invention provides a method for measuring CD measuring equipment of a wafer according to the present invention, the method comprising:
performing motion control transmission on the wafer to be detected through the motion control transmission system, so that at least first alignment and second alignment are performed on the wafer to be detected;
providing a light source through the lighting system, wherein light of the light source is irradiated onto the wafer to be measured through the imaging system;
the focusing system moves on the Z axis, and the positioning analysis system enables the imaging system to focus on the Z axis according to the positioning analysis result to obtain a focused image;
and realizing the CD measurement of the wafer to be measured through the image processing system.
The third aspect of the present invention provides a use of the CD measuring apparatus for wafer of the present invention, which is used for optical CD measurement within 300 nm.
A fourth aspect of the present invention provides an exposure apparatus, comprising the CD measuring apparatus for a wafer according to the present invention.
The invention can bring at least one of the following beneficial effects:
1. compared with the existing optical measurement method, the CD measurement of the invention can reach the accuracy of 300nm from 400nm
2. Compared with foreign CD-SEM, the CD measurement of the invention does not damage the appearance of the chip, does not need a vacuum environment, and meets the requirements of the semiconductor production process with required line width.
Drawings
The foregoing features, technical features, advantages and embodiments are further described in the following detailed description of the preferred embodiments, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic view of the structure of an exposure apparatus.
Description of reference numerals:
1-a sheet box; 2-edge inspection machine; 3-a manipulator; 4-a focusing system; 5-Z axis; 6-stage platform; 7-an air floating platform.
Detailed Description
Various aspects of the invention are described in further detail below.
Unless defined or stated otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, any methods and materials similar or equivalent to those described herein can be used in the methods of the present invention.
The terms are described below:
in the present invention, the "wafer" and the "chip" have the same meaning and may be used interchangeably.
Unless explicitly stated or limited otherwise, the term "or" as used herein includes the relationship of "and". The "sum" is equivalent to the boolean logic operator "AND", the "OR" is equivalent to the boolean logic operator "OR", AND "is a subset of" OR ".
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element could be termed a second element without departing from the teachings of the present inventive concept.
Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number and aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
It should be further noted that the drawings provided in the following embodiments are only schematic illustrations of the basic concepts of the present application, and the drawings only show the components related to the present application rather than the numbers, shapes and dimensions of the components in actual implementation, and the types, the numbers and the proportions of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated. For example, the thicknesses of elements in the drawings may be exaggerated for clarity.
The terms "connected," "communicating," and "connecting" are used broadly and encompass, for example, a fixed connection, a connection through an intervening medium, a connection between two elements, or an interaction between two elements, unless expressly stated or limited otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
For example, if an element (or component) is referred to as being on, coupled to, or connected to another element, then the element may be directly formed on, coupled to, or connected to the other element or intervening elements may be present therebetween. Conversely, if the expressions "directly on", "directly coupled with", and "directly connected with", are used herein, then there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted similarly, such as "between.. And" directly attached, "adjacent," and "directly adjacent," etc.
It should be noted that the terms "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The terms "inner" and "outer" are used to refer to directions toward and away from, respectively, the geometric center of a particular component. It will be understood that these terms are used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. These terms should also encompass other orientations of the device in addition to the orientation depicted in the figures.
Example 1 (CD measuring device)
Critical Dimension (CD) is an important parameter in semiconductor manufacturing process, and measurement of CD is an important means for monitoring whether the chip manufacturing process is up to standard. In general, the main ways of detecting Critical Dimensions (CD) include CD SEM (critical dimension scanning electron microscope) and optical.
The following are common scenarios for measuring the critical dimension, new problems generated to solve the critical dimension measurement problem, and processing schemes for corresponding solutions adopted to solve the new problems:
scene one: CD SEM mode
In order to measure the variation of the pattern size, a Scanning Electron Microscope (SEM) is often used. CD-SEM is a secondary imaging technique using electron beams for imaging. Because the production technology of CD SEM is in the blank in China for a long time, most of the domestic Fab plants use imported CD SEM, the model of 4/6 inch is stopped, and the domestic 4/6 inch Fab plants have a lot of demands, so most of the Fab plants spend high price for purchasing the refitted CD SEM of 8/12 inch. And most of them are only one equipment in the whole plant. The method also becomes a bottleneck step of production, only samples can be picked for random test, and comprehensive monitoring cannot be achieved.
In addition, the imported equipment is imaged by electron beams, and the shape of the photoresist is damaged by the impact of the electron beams on the photoresist, so that the production of chips is influenced.
Moreover, the imported equipment needs a vacuum environment, the imported equipment needs to be vacuumized, and the testing efficiency is low.
In addition, the production technology of CD-SEM is in domestic blank for a long time, so the price is monopolized.
Scene two: OCD mode
Optical Critical Dimension (OCD), and other measurement steps, may also be employed to assess the critical dimensions of the fabricated work piece.
However, the current domestic fully automatic CD measuring equipment is only 400nm in size. The minimum line width of the process of many domestic semiconductor factories is 300nm, and the demand of equipment capable of rapidly and accurately measuring the CD is large.
Therefore, the technical problem that the invention aims at is that: how to optically measure the CD measuring device from 400nm to 300nm without the aid of CD SEM and achieve the required accuracy.
In view of the above problems, the inventors have conducted extensive and intensive experiments to improve the accuracy of the conventional 400 nm-level CD measuring apparatus to within 300nm by using an optical method by performing at least coarse alignment and fine alignment on the alignment system of the wafer and then focusing the imaging system by using the focusing system. Therefore, the bottleneck problem that the CD measuring equipment needs to be imported with CD SEM at home is solved primarily. Meanwhile, the problems that the appearance of the chip is damaged and a vacuum environment is needed due to the adoption of a CD SEM scheme are solved, the CD measuring equipment does not need a vacuum environment, the capacity is obviously improved, and the appearance of the chip is not influenced.
The technical concept adopted by the invention comprises the following steps: and carrying out at least coarse alignment and fine alignment on the alignment system of the wafer, and then focusing the imaging system by adopting the focusing system.
A first aspect of the present invention provides a CD measuring apparatus for a wafer, including a control system, an illumination system, an imaging system, and an image processing system, the CD measuring apparatus further including:
the motion control transmission system is configured to perform motion control transmission on the wafer to be detected, so that the wafer is subjected to at least first alignment and second alignment;
the focusing system is fixedly connected with the imaging system and provided with a positioning analysis system, so that the imaging system can focus according to a positioning analysis result.
Preferably, the focusing system has a Z-axis freedom of movement, the focusing system is fixedly connected with the imaging system, and the focusing system is provided with a positioning analysis system, so that the imaging system can focus on the Z axis according to the positioning analysis result.
Specifically, the control system controls the PLC to give out signals through the industrial personal computer software to control the electrical components. Such as stage edge patrols, manipulators, focusing systems, etc.
Specifically, the first alignment is to find the flat edge of the wafer by an edge patrol machine to perform preliminary alignment.
Specifically, the second alignment is to adjust the wafer to be perfectly horizontal under the field of view by left and right marks on the wafer.
Preferably, the focusing system further comprises a controller configured to secure the imaging system to the controller of the focusing system.
Preferably, in the focusing system, the positioning analysis system is configured to send the positioning analysis result to the control system, so that the control system controls the imaging system to focus on the Z axis.
Preferably, the focusing system is configured to perform positioning analysis by using a positioning analysis system after the wafer of the motion control transportation system is aligned to a required requirement.
Preferably, the positioning analysis system in the focusing system comprises a laser positioning analysis system or an infrared positioning analysis system.
Preferably, the motion control transmission system comprises a robot device for transmitting the wafer, an edge inspection device for performing first alignment on the wafer, and a wafer alignment platform for performing second alignment on the wafer.
Another aspect of the present invention provides a method for measuring CD measuring equipment of a wafer, the method comprising:
performing motion control transmission on the wafer to be detected through the motion control transmission system, so that at least first alignment and second alignment are performed on the wafer to be detected;
providing a light source through the lighting system, wherein light of the light source is irradiated onto the wafer to be measured through the imaging system;
the focusing system moves on the Z axis, and the positioning analysis system enables the imaging system to focus on the Z axis according to the positioning analysis result to obtain a focused image;
and realizing the CD measurement of the wafer to be measured through the image processing system.
More specifically, the present invention exemplifies an exemplary exposure apparatus.
As shown in fig. 1, a core structure of an exposure apparatus employing one embodiment of the present invention is schematically described (a robot and a pre-alignment device are not shown);
the 300 nanometer measuring equipment comprises a pre-motion control transmission system, an illumination system, a focusing system, an imaging system, an electrical control system and an image processing system;
the motion control transmission system comprises a manipulator for conveying the wafer, a roughly aligned edge patrol machine 2 and a stage platform 6 for precisely moving the wafer;
the lighting system is an adjustable halogen light source and is arranged on the imaging system, and light irradiates the detection sample through the imaging system;
the focusing system 4 comprises a laser positioning analysis system and a Z axis, can accurately control the movement of the Z axis, and is fixed on the empty gantry through a fixing device;
wherein, the imaging system 4 comprises a microscopic light path and a switchable objective lens; the imaging system is fixed on the focusing controller;
the electric control system mainly controls electricity, vacuum and atmospheric pressure of equipment, and realizes control of the atmospheric pressure and vacuum of the manipulator, the edge inspection machine stage, the lighting system and the vibration isolation platform;
the image processing system mainly realizes automatic positioning of the measured image and automatic measurement of the size through software analysis.
The following describes how the 300nm CD metrology process achieves a 300nm critical dimension measurement:
the initialization process is performed after the CD measuring equipment is powered on or the system is reset, and the initialization process comprises the following steps:
(1) Returning the manipulator to the original point: after the mechanical arm is powered on, the two mechanical carrying arms rotate, and the two mechanical carrying arms need to move to the original position when ascending and descending;
(2) The edge patrol machine returns to the original point: the edge patrol machine realizes rough alignment (first alignment) of the wafer, finds out a flat edge (figure 1) of the wafer, moves the wafer to a fixed position, and needs to perform zeroing movement after being electrified;
(3) Returning the Stage motion platform to the original point: the stage motion platform comprises an X axis, a Y axis and a rotary platform, the platform realizes the accurate movement of wafer, the position to be tested is accurately moved to the imaging position below the objective lens, and the X axis, the Y axis and the rotary platform need to do zeroing motion after electrification.
When the second alignment is performed, the wafer is adjusted to a horizontal position by mark on the wafer. And obtaining an amplified image through accurate displacement and automatic switching of the objective lens.
When focusing is performed, automatic focusing is performed by laser or infrared rays, and a clear image is recognized.
And the CD line width test is accurate through the control of software. The control of said software is known to the person skilled in the art and is within the scope of protection of the present invention, as long as it does not limit the object of the invention.
Through the cooperation of the technical means, the accuracy that the CD can reach 300nm from 400nm is verified.
It should be noted that all of the descriptions in the specification are exemplary and can be combined with each other in one aspect or a plurality of aspects to obtain different embodiments, all of which belong to the scope of the present invention.
From the above description, it can be seen that the main advantages of the 300nm (including within 300 nm) CD measuring device compared with the existing CD measuring device are as follows:
the device can realize 300-nanometer size measurement, and domestic devices can only test the size of more than 400 nanometers basically;
the equipment test does not need a vacuum environment, and compared with the characteristics that imported equipment needs vacuumizing and the test efficiency is low, the capacity of the equipment is obviously improved.
According to the optical imaging measurement principle of the equipment, the imported equipment is imaged by electron beams, and the shape of the photoresist can be damaged by the impact of the electron beams on the photoresist, so that the production of chips is influenced.
The device can be made in China and does not depend on imported equipment;
compared with import equipment, the equipment has obvious price advantage.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
All documents referred to herein are incorporated by reference into this application as if each were individually incorporated by reference. Furthermore, it should be understood that various changes and modifications can be made by those skilled in the art after reading the above disclosure, and equivalents also fall within the scope of the invention as defined by the appended claims.
Claims (10)
1. A CD metrology apparatus for wafers, comprising a control system, an illumination system, an imaging system, and an image processing system, for optical CD metrology within the 300nm scale, the CD metrology apparatus further comprising:
the motion control transmission system is configured to perform motion control transmission on the wafer to be detected, so that the wafer is subjected to at least first alignment and second alignment;
the focusing system is fixedly connected with the imaging system and provided with a positioning analysis system, so that the imaging system can focus according to a positioning analysis result.
2. The wafer CD metrology apparatus of claim 1, wherein the focusing system further comprises a controller configured to secure the imaging system to the controller of the focusing system.
3. The apparatus of claim 1 or 2, wherein the focus system is configured to send the positioning analysis result to the control system, so that the control system controls the imaging system to focus on the Z-axis.
4. The apparatus of claim 1 or 2, wherein the focusing system is configured to perform a positioning analysis using a positioning analysis system when the wafer of the motion-controlled transport system is aligned to a desired requirement.
5. The apparatus of claim 1 or 2, wherein the positioning analysis system of the focusing system comprises a laser or infrared positioning analysis system.
6. The apparatus of claim 5, wherein the positioning analysis system of the focusing system comprises a laser positioning analysis system.
7. The apparatus of claim 1 or 2, wherein the motion control transmission system comprises a robot device for transmitting the wafer, a border device for performing a first alignment on the wafer, and a wafer alignment stage for performing a second alignment on the wafer.
8. A method of measuring a wafer by a CD measuring apparatus according to any one of claims 1 to 7, the method comprising:
performing motion control transmission on the wafer to be detected through the motion control transmission system, so that at least first alignment and second alignment are performed on the wafer to be detected;
providing a light source through the lighting system, wherein light of the light source is irradiated onto the wafer to be measured through the imaging system;
the focusing system moves on the Z axis, and the positioning analysis system enables the imaging system to focus on the Z axis according to the positioning analysis result to obtain a focused image;
and realizing the CD measurement of the wafer to be measured through the image processing system.
9. Use of the apparatus according to any of claims 1-7 for optical CD measurement within 300 nm.
10. An exposure apparatus comprising a CD measurement apparatus for a wafer according to any one of claims 1 to 7.
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| US20020018217A1 (en) * | 2000-08-11 | 2002-02-14 | Michael Weber-Grabau | Optical critical dimension metrology system integrated into semiconductor wafer process tool |
| US20040146295A1 (en) * | 2003-01-15 | 2004-07-29 | Negevtech Ltd. | System for detection of wafer defects |
| TW200716947A (en) * | 2005-07-19 | 2007-05-01 | Fei Co | Method of measuring three-dimensional surface roughness of a structure |
| US20070120056A1 (en) * | 2005-11-25 | 2007-05-31 | Wataru Nagatomo | Method and apparatus for evaluating pattern shape of a semiconductor device |
| TW200905157A (en) * | 2007-04-12 | 2009-02-01 | Nikon Corp | Measuring method, exposure method, and device fabricating method |
| US20110016437A1 (en) * | 2008-03-20 | 2011-01-20 | Scheruebl Thomas | Method and apparatus for measuring of masks for the photo-lithography |
| TW202217466A (en) * | 2020-07-17 | 2022-05-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | Method and apparatus for classifying semiconductor wafers |
-
2022
- 2022-07-25 CN CN202210879881.3A patent/CN115388762A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020018217A1 (en) * | 2000-08-11 | 2002-02-14 | Michael Weber-Grabau | Optical critical dimension metrology system integrated into semiconductor wafer process tool |
| US20040146295A1 (en) * | 2003-01-15 | 2004-07-29 | Negevtech Ltd. | System for detection of wafer defects |
| TW200716947A (en) * | 2005-07-19 | 2007-05-01 | Fei Co | Method of measuring three-dimensional surface roughness of a structure |
| US20070120056A1 (en) * | 2005-11-25 | 2007-05-31 | Wataru Nagatomo | Method and apparatus for evaluating pattern shape of a semiconductor device |
| TW200905157A (en) * | 2007-04-12 | 2009-02-01 | Nikon Corp | Measuring method, exposure method, and device fabricating method |
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