CN115386862A - Preparation method of metal/graphene/polycrystalline diamond film particle detector - Google Patents
Preparation method of metal/graphene/polycrystalline diamond film particle detector Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 85
- 239000010432 diamond Substances 0.000 title claims abstract description 85
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 84
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000002245 particle Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000011889 copper foil Substances 0.000 claims abstract description 23
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000011065 in-situ storage Methods 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 25
- 230000004907 flux Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 230000005658 nuclear physics Effects 0.000 abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
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Abstract
The invention discloses a preparation method of a metal/graphene/polycrystalline diamond film particle detector, belonging to the technical field of nuclear physics 2 Carrying out heat treatment on the metal matrix at the temperature of 700-800 ℃ in the plasma atmosphere, then closing Ar and introducing CH 4 Regulating microwave power to 600-700 deg.C, growing graphene layer on the surface of metal substrate, and regulating H 2 、CH 4 The ratio, the microwave power and the copper foil temperature are controlled to grow the high-quality and high-mass copper foil with the thickness of 0.25 to 0.5 mm under the conditions of the matrix temperature range of 800 to 900 ℃ and the methane concentration of 1.66 to 4.50 percentA diamond particle detector based on a metal and graphene ohmic contact electrode is formed on the diamond film; the steps are preferably completed in the same set of microwave plasma chemical vapor deposition device, the whole structure of the detector is constructed in the same set of device through in-situ continuous growth, the materials do not need to be transferred among different devices, the method has high preparation efficiency, simple and convenient steps and low cost, and the high quality of each layer of material preparation can be ensured.
Description
Technical Field
The invention relates to the technical field of nuclear physics, in particular to a preparation method of a metal/graphene/polycrystalline diamond film particle detector.
Background
The physics of radioactive beams is the most active frontline research field of current nuclear science, and numerous large-scale heavy ion comprehensive research devices, such as the German FAIR, the French SPIRAL2, the American FRIB and the Chinese HIAF, are being upgraded and newly built internationally. Clear particle identification is an important guarantee for developing nuclear physics experimental research by utilizing radioactive beams, so that the realization of a particle identification detector system under a strong current condition is very critical. The particle detector commonly used at present is made of a plastic scintillator and has the advantages of relatively fast rise and decay time, high optical transmittance, easy manufacture and processing, low price and the like. However, the plastic scintillator has poor radiation resistance and short service life, and cannot basically meet the requirements of a new generation of radioactive beam devices on the detection of strong current particles.
The diamond has excellent radiation resistance, and the maximum radiation energy density which can be borne is about 5 multiplied by 10 14 n/cm 2 And thus can be used in radiation detector materials in extremely harsh radiation environments, such as for neutron detection, when a flux of 14MeV (flux corresponds to an energy density of 6X 10) 12 n/cm 2), the detection efficiency and the energy resolution are hardly reduced. Meanwhile, compared with other detector materials, the diamond has excellent comprehensive properties: in terms of optical properties, the diamond is almost transparent in a wide range from near ultraviolet (225 nm) to infrared, and the influence of ambient stray light on a diamond detector is extremely small in the using process without adding an optical filter; in terms of thermal properties, the diamond has the highest thermal conductivity (2000W/mK) in natural materials, so that the diamond radiation detector can normally work at higher temperature without an additional refrigerating device like a silicon detector, and the diamond radiation detector can be made to be very small in size and extremely light in weight; in the aspect of electrical properties, the diamond has a large forbidden band width (5.5 eV), high resistivity (greater than 1010 omega cm) and a small dielectric constant (about 5.7), so that the low noise and the high signal-to-noise ratio of the diamond detector are ensured; meanwhile, the diamond has high breakdown voltage and high carrier mobility, so that the diamond detector can bear high breakdown voltage and high carrier mobilityThe working voltage, the charge collection efficiency is high, and the time response is fast.
Therefore, the detector made of the diamond material is an ideal detector meeting the harsh environmental requirements such as high flux, high irradiation intensity and the like and performance requirements in the field of new generation particle detection, and also becomes a preferred device of detectors in various international strong current devices.
At present, the manufacturing process of a particle detector based on a diamond film generally comprises the steps of growing an electronic-grade diamond film material by using a microwave plasma technology, depositing a patterned double-layer (Au/Ti) or three-layer (Au/Cr/Ti or Au/Pt/Ti) metal multilayer film on the surface by using a physical vapor deposition method, forming an ohmic contact electrode by annealing treatment, and forming a detector device such as CN 114335238A after connecting a lead and packaging.
The new ohmic contact electrode adopts an Au/graphene double-layer film structure, the manufacturing process is similar to that of the metal contact electrode, a diamond film is grown firstly, a nickel (copper) film is deposited on the surface of the diamond to be used as a catalyst layer, the diamond → graphene in-situ conversion is realized by annealing in the inert gas atmosphere, finally, the nickel (copper) film is removed by acid corrosion to expose the graphene on the surface of the diamond, and the Au film is deposited on the surface of the graphene to obtain the Au/graphene ohmic contact electrode, so that the Au/graphene/diamond film detector is formed.
Although the performance of a diamond device based on an Au/graphene ohmic contact electrode is more excellent, the existing manufacturing process is complex, and comprises multiple steps of detection medium growth, surface catalytic film deposition, annealing treatment to realize conversion of graphene on the surface of diamond, catalytic layer acid corrosion, graphene surface conductive layer deposition and the like, and different devices such as special diamond chemical vapor deposition equipment, sputtering or evaporation coating equipment, a protective atmosphere heat treatment furnace and the like are required to be used, so that the manufacturing cost is high, the quality influence factors are multiple (for example, the materials need to be transferred among different equipment to cause atmosphere exposure pollution, and the process parameters of each process need to be optimally controlled are multiple), and a new method which is simpler, more convenient and lower in cost is urgently required to be developed.
Disclosure of Invention
The invention aims to provide a preparation method of a metal/graphene/polycrystalline diamond film particle detector, so as to solve the problems.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a preparation method of a metal/graphene/polycrystalline diamond film particle detector comprises the following steps: depositing a layer of graphene on the surface of a patterned metal substrate to serve as an ohmic contact electrode layer, and growing a diamond film on the graphene in situ to obtain the graphene-based metal substrate; wherein the thickness of the metal matrix is 0.025-0.05 mm, and the thickness of the diamond film is 0.25-0.5 mm.
The preparation method is a structural layer preparation method in reverse order compared with the traditional method, and the high-quality polycrystalline diamond film is continuously grown in situ on the graphene deposited on the surface of the metal matrix through adjusting the process parameter conditions, so that the growth of the formed device material and the manufacture of the device are synchronously completed at one time, the equipment and the process period and the influence factors required by the production of the metal/graphene/polycrystalline diamond film particle detector are greatly reduced, the whole manufacturing process of the diamond detector based on the graphene ohmic contact electrode is simple, convenient and efficient, the quality controllability is high, and the cost is obviously reduced.
As a preferable technical scheme: the metal substrate is a copper foil or a nickel foil, etc., and a copper foil is more preferable because it is not only a commonly used conductive electrode material but also an optimal substrate for vapor deposition growth of a high-quality graphene film.
As a further preferable technical scheme: the copper foil is a polycrystalline copper foil, which is low in price and easy to obtain.
As a preferred technical scheme: the graphene is multilayer graphene.
As a preferred technical scheme: and the deposition of the graphene layer and the in-situ growth of the diamond film are carried out in the same equipment.
In the preferred solution of the invention, the preparation method of the polycrystalline diamond film material adopts the graphene surface in-situ growth technology, namely, the same set of device is used, firstly the graphene layer is deposited on the surface of the copper foil substrate as the middle layer, then the microwave power is increased to raise the temperature of the substrate, and simultaneously CH is increased 4 In the amount of (2) to prolong the deposition time inAnd further growing a thicker polycrystalline diamond film layer on the surface of the graphene film.
As a preferred technical scheme: the method for depositing the layer of graphene is microwave plasma chemical vapor deposition.
As a further preferable technical scheme: the specific method of microwave plasma chemical vapor deposition comprises the following steps: heat treatment of metal substrate by Ar and H 2 The plasma heating of the mixed gas is realized, and the reaction gas source for the growth of the graphene is CH 4 And H 2 In which H 2 Flux 400-600 sccm, CH 4 The flux is 1-6 sccm, the temperature of the metal matrix is controlled at 600-700 ℃, and the deposition time is 20-50 s.
As a further preferable technical proposal: after the growth time of the graphene layer is reached, the microwave power is increased to raise the temperature of the metal substrate on which the graphene layer is deposited, and CH is increased 4 The deposition time is prolonged, and the polycrystalline diamond film layer is further continuously grown on the surface of the graphene layer.
As a further preferable technical proposal: the temperature of the metal matrix is raised to 800-900 ℃, and the CH is added 4 The flux of (2) is 10-12 sccm, and the deposition time is 60-100h.
Compared with the prior art, the invention has the advantages that: the method can realize that the same set of microwave plasma chemical vapor deposition device is adopted to firstly utilize Ar and H on the surface of a metal matrix such as copper foil 2 The mixed gas plasma heats the copper foil matrix for heat treatment, then changes the gas source to grow the graphene layer on the copper foil matrix, and finally adjusts the gas source to be connected with the in-situ growth diamond film on the copper foil matrix, thereby forming the detector device based on the metal/graphene/polycrystalline diamond film structure in one step, unlike the traditional method that the diamond film, the middle graphene layer and the surface metal layer are respectively prepared by different equipment devices, the matrix does not need to be transferred, and the detector device can be continuously grown in situ in the same set.
Drawings
FIG. 1 is a scanning electron microscope image of a graphene film prepared on the surface of a copper foil at different growth times, wherein (a) is 20s for example 1, and (b) is 30s for example 2;
FIG. 2 is a Raman spectrum of a graphene film prepared on the surface of a copper foil for different growth times, wherein (a) is 20s in example 1, and (b) is 30s in example 2;
fig. 3 is a scanning electron microscope image of a diamond film prepared on the surface of graphene in example 2 at different deposition times, wherein (a): 1 h; (b): 2 h; (c): 3 h; (d): 4h; (e): 5h; (f): 6h; (h): 7h;
FIG. 4 is a Raman spectrum of a diamond film prepared by depositing graphene on the surface for 7h in example 2;
FIG. 5 is a V/A characteristic curve of the metal/graphene/polycrystalline diamond film particle detector prepared in example 2.
Detailed Description
The invention will be further explained with reference to the drawings.
Example 1:
a preparation method of a metal/graphene/polycrystalline diamond film particle detector comprises the following steps:
sequentially carrying out ultrasonic cleaning on the polycrystalline Cu foil in acetone, isopropanol and deionized water for 10min respectively, drying the polycrystalline Cu foil after drying, placing the polycrystalline Cu foil on a water-cooled sample platform in a microwave plasma chemical vapor deposition reaction chamber, vacuumizing to 0.2Pa, and opening the sample platform to cool water; introducing Ar and H into the deposition chamber 2 Then, microwave is applied to generate plasma to heat the copper foil for heat treatment, the Ar flux is 200 sccm, H 2 The flux is 100sccm, the plasma heating temperature is 700 ℃, and the heat preservation time is 30min;
then reducing the microwave power to reduce the temperature of the copper foil after heat treatment by 600 ℃, and H 2 Increasing the flux to 400 sccm, closing Ar and introducing CH 4 Growing a graphene film by using 4 sccm gas for 20s, wherein the scanning electron micrograph of the obtained graphene film is shown in figure 1 (a), and the Raman spectrogram is shown in figure 2 (a);
finally increasing the microwave power to raise the temperature of the copper foil matrix with the deposited graphene layer to 820 ℃, and simultaneously increasing CH 4 Is introduced in an amount of 12 sccmAnd further growing a polycrystalline diamond film on the graphene layer in situ, wherein the deposition time is 60h, and the thickness of the diamond film layer is 310 mu m.
Example 2:
and ultrasonically cleaning the polycrystalline Cu foil in acetone, isopropanol and deionized water for 20min respectively in sequence, drying the polycrystalline Cu foil after drying, placing the polycrystalline Cu foil on a water-cooled sample platform in a microwave plasma chemical vapor deposition reaction chamber, vacuumizing the sample platform to 0.1Pa, and opening the sample platform to cool water. Introducing Ar and H into the deposition chamber 2 And then applying microwave to generate plasma to heat the copper foil for heat treatment, wherein Ar flux is 150sccm and H 2 The flux is 150sccm, the plasma heating temperature is 780 ℃, and the heat preservation time is 40min;
then reducing the microwave power to reduce the temperature of the heat-treated copper foil by 680 ℃, and H 2 Increasing flux to 500 sccm, turning off Ar, and introducing CH 4 Growing a graphene film by using 6sccm of gas for 30s; the obtained graphene film is shown in a scanning electron microscope image in a figure 1 (b), and a Raman spectrogram is shown in a figure 2 (b);
finally increasing the microwave power to raise the temperature of the copper foil substrate with the deposited graphene layer to 880 ℃, and simultaneously increasing CH 4 The introduction amount of the graphene is 10sccm, and further growing a polycrystalline diamond film on the graphene layer in situ, wherein the deposition time is 100h, and the thickness of the diamond film layer is 420 micrometers;
the V/a characteristic curve of the metal/graphene/polycrystalline diamond film particle detector manufactured in this embodiment is shown in fig. 5, and as can be seen from fig. 5: the linearity degree of the volt-ampere curve of the device is high and complete, and the fact that the surface of the diamond and the metal/graphene composite electrode form good ohmic contact is shown.
In addition, the inventors also examined the characteristics of the diamond film prepared on the surface of the graphene with different deposition times in example 2, and obtained a scanning electron micrograph as shown in fig. 3, in which (a) shows that the deposition time of the diamond film is 1h, (b) shows that the deposition time of the diamond film is 2h, (c) shows that the deposition time of the diamond film is 3h, (d) shows that the deposition time of the diamond film is 4h, (e) shows that the deposition time of the diamond film is 5h, (f) shows that the deposition time of the diamond film is 6h, and (h) shows that the deposition time of the diamond film is 7h, as shown in fig. 3: the copper foil/graphene surface is relatively flat, and diamond grains are mainly nucleated at folds on the graphene surface in the initial stage, which is caused by the fact that the defects of the graphene block the surface diffusion of carbon atoms, and the nucleation barrier of diamond is reduced, so that the diamond nucleation is facilitated; the diamond particle size is obviously increased along with the time, the surface diamond is obviously more compact, and some diamond particles are already piled up; and continuously increasing the growth time to 5h, forming a large-area compact diamond film on the surface, completely covering the whole graphene surface by 6h to form a continuous film, continuously prolonging the growth time to 7h, growing the diamond grains, completing the crystal form, improving the crystallization quality, and changing the subsequent deposition into pure diamond epitaxial growth.
The raman spectrum of the diamond film prepared by depositing 7h on the surface of graphene in the above example 2 is shown in fig. 4, and it can be seen from fig. 4 that: in the figure, only the sharp 1332cm -1 The characteristic peaks of diamond are strongly proved that the diamond film with high purity and crystallinity is generated at this time, and the result is completely consistent with the result in fig. 3.
Furthermore, from a comparison of fig. 1 and 2, it can be seen that: typical graphene films can be grown under the process conditions of the embodiments 1 and 2, and the surfaces of the graphene films obtained under the conditions of the embodiment 1 are flatter and smoother, but the surfaces of the graphene films are clean and uniform and have no pollutants.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A preparation method of a metal/graphene/polycrystalline diamond film particle detector is characterized by comprising the following steps: depositing a layer of graphene on the surface of a patterned metal substrate to serve as an ohmic contact electrode layer, and growing a diamond film on the graphene in situ to obtain the graphene-based metal substrate; wherein the thickness of the metal matrix is 0.025-0.05 mm, and the thickness of the diamond film is 0.25-0.5 mm.
2. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 1, wherein the method comprises the following steps: the metal matrix is copper foil or nickel foil.
3. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 2, wherein the method comprises the following steps: the copper foil is a polycrystalline copper foil or a nickel foil.
4. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 1, wherein the method comprises the following steps: the graphene is multilayer graphene.
5. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 1, wherein the method comprises the following steps: and the deposition of the graphene layer and the in-situ growth of the diamond film are carried out in the same equipment.
6. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 1, wherein the method comprises the following steps: the method for depositing the graphene layer is microwave plasma chemical vapor deposition.
7. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 6, wherein: the specific method of microwave plasma chemical vapor deposition comprises the following steps: heat treatment of metal substrate by Ar and H 2 The plasma heating of the mixed gas is realized, and the reaction gas source for the growth of the graphene is CH 4 And H 2 In which H is 2 Flux 400-600 sccm, CH 4 The flux is 1-6 sccm, the temperature of the metal matrix is controlled at 600-700 ℃, and the deposition time is 20-50 s.
8. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 7, wherein the method comprises the following steps: up to the graphene layerAfter the growth time, the microwave power is increased to raise the temperature of the metal substrate deposited with the graphene layer, and CH is increased 4 The deposition time is prolonged, and the polycrystalline diamond film layer is further continuously grown on the surface of the graphene layer.
9. The method for preparing a metal/graphene/polycrystalline diamond film particle detector according to claim 8, wherein the method comprises the following steps: the temperature of the metal matrix is raised to 800-900 ℃, and the CH is 4 The flux of (2) is 10-12 sccm, and the deposition time is 60-100h.
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