CN115369359A - Method for removing gold (100) surface reconstruction layer - Google Patents

Method for removing gold (100) surface reconstruction layer Download PDF

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CN115369359A
CN115369359A CN202210984358.7A CN202210984358A CN115369359A CN 115369359 A CN115369359 A CN 115369359A CN 202210984358 A CN202210984358 A CN 202210984358A CN 115369359 A CN115369359 A CN 115369359A
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temperature
atoms
depositing
diffusion furnace
gold
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CN115369359B (en
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刘衍朋
张尔文
张伟
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Nanjing University of Aeronautics and Astronautics
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Nanjing University of Aeronautics and Astronautics
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Abstract

The invention discloses a method for removing a gold (100) surface reconstruction layer, which comprises the following steps: fixing Au (100) single crystal on a molybdenum plate; knudsen diffusion furnace (K-cell) degassing; pretreating an Au (100) substrate; determining the relation between the Knudsen diffusion furnace and the evaporation capacity of tellurium (Te); depositing a small amount of Te on the surface of Au (100); further depositing Te; te was deposited in large amounts. The invention firstly proposes a method for removing a Au (100) surface reconstruction layer by depositing Te atoms. The method is carried out at a gas pressure of less than 10 ‑9 Under the condition of ultra-high vacuum environment of mbar and without forming irregular Au nano-islands, the large-scale controllable removal of the reconstruction layer in the hexagonal arrangement on the surface of the Au (100) is realized, the gold atoms on 27/32 of the surface of the Au (100) can be maximally exposed and are stably and stably removedThe intrinsic tetragonal arrangement is maintained.

Description

Method for removing gold (100) surface reconstruction layer
Technical Field
The invention relates to the technical field of surface chemistry of two-dimensional materials, in particular to a method for removing a gold (100) surface reconstruction layer.
Background
The (100) surface of gold [ Au (100) ] has a four-fold symmetrical atomic arrangement and has important application in the aspects of oxygen reduction reaction, organic molecule self-assembly monolayer and the like. However, the hexagonal reconstruction layer of the Au (100) surface hinders its practical application. At present, methods for removing the Au (100) surface reconstruction layer include electrochemical methods, ion bombardment methods, methods for depositing other metals, and methods for depositing sulfur atoms. The electrochemical method uses sulfuric acid solution as electrolyte, and when the potential is positive, the reconstructed layer on the surface of Au (100) is gradually removed. However, the method inevitably forms irregular Au nano islands on the surface of the Au (100), which destroys the flatness and continuity of the surface of the Au (100) and affects the related application of the subsequent Au (100). The ion bombardment method uses accelerated argon ions and neon ions to bombard the Au (100) surface, causing local atomic rearrangements to change from hexagonal arrangement of the reconstructed layer to tetragonal arrangement of the bulk phase. Although this method can realize a four-fold symmetric atomic arrangement on the surface of Au (100), it cannot realize the removal of a large-area reconstruction layer. The other metal deposition method and the sulfur atom deposition method are both used for destroying the surface structure of Au (100) by depositing heterogeneous atoms. Although the surface reconstruction can be removed by the two methods, a layered structure is generated to cover the surface of the Au (100), and the tetragonal Au atoms are not exposed. Aiming at the defects of the prior art scheme, the invention provides a method for removing the Au (100) surface reconstruction layer, so that the Au (100) tetragonal arrangement bulk phase atoms are exposed, and the development of the fields of oxygen reduction reaction, organic molecule self-assembly and the like is promoted.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for removing an Au (100) surface reconstruction layer, which is used for removing an Au (100) surface reconstruction layer under the condition that the air pressure is less than 10 -9 Under an ultrahigh vacuum environment of mbar, under the condition that irregular Au islands are not formed, the large-scale controllable removal of the reconstruction layer with hexagonal arrangement on the surface of Au (100) is realized, and Au atoms with square arrangement below are exposed.
The invention adopts the following technical scheme for solving the technical problems:
a method of removing a gold (100) surface reconstruction layer comprising the steps of:
1) Fixing Au (100) single crystals on a molybdenum plate;
2) Degassing by a knudsen diffusion furnace; the temperature of the Knudsen diffusion furnace is increased to 100 ℃ at the speed of 20 ℃/min through a control panel, and the air pressure is slightly increased at the moment; when the air pressure begins to drop, the temperature is gradually increased at the speed of 2 ℃/min according to the amplitude of 10 ℃; the temperature is continuously increased after the process of first increasing and then decreasing of the air pressure is observed; when the temperature of the knudsen diffusion furnace is 160 ℃, the air pressure is slowly increased all the time, impurities are removed, and Te powder begins to slowly evaporate;
3) Pretreating an Au (100) substrate;
4) Determining the relationship between the temperature of the Knudsen diffusion furnace and the Te evaporation capacity;
5) Depositing a small amount of Te on the surface of the Au (100);
6) Further depositing Te on the basis of the step 5);
7) Te is deposited in large quantities on the basis of step 6).
Further, the Au (100) single crystal in the step 1) is two superposed coaxial cylinders with different diameters in appearance, and an annular step plane is arranged between the two cylinders.
Further, the step 1) specifically comprises:
the bottom surface of a cylinder with a larger Au (100) single crystal diameter is tightly attached to a molybdenum plate, a hole is cut in the center of the tantalum foil, and the size of the hole is consistent with that of the bottom surface of the cylinder with the smaller Au (100) single crystal diameter; sleeving a tantalum foil on an Au (100) single crystal, cutting off a small block at each of four corners of the tantalum foil, and welding four sides of the tantalum foil on a molybdenum plate by using a spot welding machine; fixing the Au (100) single crystal on a molybdenum plate through the extrusion action of the tantalum foil and the annular step surface; the large cylindrical part of the Au (100) single crystal was wrapped with tantalum foil, and the exposed cylindrical surface with a smaller diameter served as the surface of the material to be deposited later.
Further, the step 3) is specifically:
at 1.2X 10 -5 In the argon atmosphere of mbar, accelerated argon ions are sprayed to the surface of an Au (100) substrate through an ion gun, impurities on the surface of the substrate form a suspension layer under the bombardment of the argon ions, and the suspension layer is pumped out of a cavity through a molecular pump and a mechanical pump; then is at<10 -9 Heating under mbar vacuum environment; heating by radiation, and cooling after the temperature is raised to 400 ℃ and stays for 10 min; when the temperature is reduced to about 80 ℃, the next round of splashing is startedPerforming injection-heating treatment; the circulation is carried out for 4-5 times, and clean substrate surface can be obtained.
Further, the step 4) specifically comprises:
and depositing Te on the surface of the Au (100) under the conditions that the substrate is not heated and the temperature of a Knudsen diffusion furnace is 160 ℃,170 ℃ and 200 ℃ respectively, wherein the deposition time is 15min.
Further, the step 5) specifically comprises:
depositing Te atoms on the surface of Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of a Knudsen diffusion furnace is 170 ℃ and the deposition time is 15 min; a small amount of Te atoms are adsorbed at the reconstructed fringe fracture, while no Te atoms are adsorbed at the reconstructed fringe side surface without fracture.
Further, the step 6) specifically includes:
depositing Te atoms on the surface of Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of a Knudsen diffusion furnace is 200 ℃ and the deposition time is 15min on the basis of the step 5); gradually removing the reconstructed stripes from the fracture adsorbing the Te atoms; the Au (100) surface removed from reconstruction and the Au (100) surface not removed from reconstruction exist at the same time.
Further, the step 7) specifically comprises:
on the basis of the step 6), depositing Te atoms on the surface of Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of the Knudsen diffusion furnace is 220 ℃ and the deposition time is 15 min; the reconstructed stripes were completely removed and the underlying tetragonal Au atoms were exposed.
Advantageous effects
The invention firstly proposes a method for removing a Au (100) surface reconstruction layer by depositing Te atoms. The method achieves large-scale controllable removal of the reconstruction layer while exposing the 27/32 tetragonal Au atoms and avoiding the occurrence of irregular Au islands, and is further useful for oxygen reduction reactions and organic molecule self-assembly.
Drawings
FIG. 1 is a schematic representation of a sample. 1 is a molybdenum plate, 2 is a tantalum foil cut into a specific shape for fixing an Au (100) single crystal, and 3 is an Au (100) single crystal.
FIG. 2 is a schematic diagram of an experimental apparatus for depositing Te atoms on the surface of Au (100) substrate according to the present invention. 4 is an operation table for placing samples, and the samples can be heated; 5 is a sample, namely an Au (100) single crystal for depositing Te; 6 is evaporated Te atom; 7 is a mechanical pump, a molecular pump and an ion pump for maintaining the vacuum degree of the cavity; and 8 is a knudsen diffusion furnace.
FIG. 3 is a schematic diagram of an experimental process for removing Au (100) surface reconstruction. 9 is a reconstruction fringe along the [011] direction, 10 is a point where the top of the reconstruction fringe adsorbs a Te atom, and 11 is an Au (100) surface from which the reconstruction is removed.
Fig. 4 is a scanning tunneling microscope image of the reconstructed layer of the Au (100) surface. 12 is the reconstruction stripe of the Au (100) surface along the [011] direction, and 13 is the reconstruction stripe of the Au (100) surface along the [011] direction.
Fig. 5 is a large-scale scanning tunneling microscope image of an Au (100) surface with the surface reconstruction layer partially removed. 14 is the reconstruction layer not removed, 15 is the Te atoms adsorbed at the top of the reconstruction stripes, and 16 is the Au (100) surface from which the reconstruction is removed.
Fig. 6 is a scanning tunneling microscope image of the sample prepared in step 5). Reference numeral 17 denotes a Te atom adsorbed at the top of the Au (100) reconstruction fringe, and 18 denotes a side surface of the reconstruction fringe where the Te atom is not adsorbed.
Fig. 7 is a scanning tunneling microscope image of the sample prepared in step 6).
Fig. 8 is a scanning tunneling microscope image of the sample prepared in step 7). The surface reconstruction layer is now completely removed. 19 are exposed tetragonal Au atoms and 20 are adsorbed Te atoms.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The implementation of the invention requires the use of the following materials and instruments:
au (100) single crystal: cylinders with a radius of 5mm and a thickness of 2mm (small cylinders with deposited Te), commercially available from MaTeck
Tellurium powder: purity of 99.999% available from aladdin reagent limited
Scanning tunneling microscope (LT-STM, scienta Omicron), high vacuum multifunctional sample processing chamber (RM-type, scienta Omicron), lock-in amplifier (Standard Research Systems), electrochemical etching system (Scienta Omicron)
The invention firstly provides a method for removing an Au (100) surface reconstruction layer, which comprises the following specific steps:
1) An Au (100) single crystal was fixed on a molybdenum plate. The Au (100) single crystal in the step 1) is two superposed coaxial cylinders with different diameters in appearance, and an annular step plane is arranged between the two cylinders.
The cylindrical surface with the larger diameter of the Au (100) single crystal is tightly attached to the molybdenum plate, a hole is cut in the center of the tantalum foil, and the size of the hole is consistent with that of the cylindrical surface with the smaller diameter of the Au (100) single crystal; sleeving a tantalum foil on an Au (100) single crystal, cutting off a small block at each of four corners of the tantalum foil, and welding four sides of the tantalum foil on a molybdenum plate by using a spot welding machine; fixing Au (100) single crystals on a molybdenum plate through the extrusion effect of the tantalum foil and the annular step surface; the large cylindrical part of the Au (100) single crystal is wrapped by tantalum foil, and the exposed cylindrical surface with a smaller diameter is used as the surface of the material to be deposited later.
2) And (5) degassing by using a knudsen diffusion furnace. The temperature of the knudsen diffusion furnace is raised to 100 ℃ at a speed of 20 ℃/min through the control panel, and the air pressure is slightly increased at the moment. When the air pressure begins to drop, the temperature is gradually increased at the speed of 2 ℃/min and the amplitude of 10 ℃. The temperature rise is continued after the process of first rising and then falling of the air pressure is observed. When the temperature of the knudsen diffusion furnace is 160 ℃, the air pressure is slowly increased all the time, impurities are removed, and Te powder begins to slowly evaporate.
3) And (4) pretreating the substrate. At 1.2X 10 -5 And in the argon atmosphere of mbar, accelerated argon ions are sprayed to the surface of the Au (100) substrate through an ion gun, impurities on the surface of the substrate form a suspension layer under the bombardment of the argon ions, and the suspension layer is pumped out of the cavity through a molecular pump and a mechanical pump. Then at<10 -9 The heat treatment is carried out in a vacuum atmosphere of mbar. Heating with radiation, standing for 10min when the temperature is increased to 400 deg.C, and cooling. When the temperature is reduced to about 80 ℃, the next sputtering-heating treatment is started. The circulation is carried out for 4-5 times, and clean substrate surface can be obtained.
4) And determining the relationship between the temperature of the Knudsen diffusion furnace and the Te evaporation amount. And depositing Te on the surface of the Au (100) under the conditions that the substrate is not heated and the temperature of a Knudsen diffusion furnace is 160 ℃,170 ℃ and 200 ℃ respectively, wherein the deposition time is 15min.
5) A small amount of Te was deposited. Te atoms are deposited on the surface of Au (100) under the conditions that the temperature of the substrate is 400 ℃, the temperature of the Knudsen diffusion furnace is 170 ℃ and the deposition time is 15min. A small amount of Te atoms are adsorbed at the reconstructed stripe fracture, while on the reconstructed stripe side without fracture, no Te atoms are adsorbed.
6) Te is further deposited. And 5) depositing Te atoms on the surface of the Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of the Knudsen diffusion furnace is 200 ℃ and the deposition time is 15min. The reconstructed fringes start to be gradually removed from the fracture where the Te atoms are adsorbed. The Au (100) surface removed from reconstruction and the Au (100) surface not removed from reconstruction exist at the same time.
7) Te was deposited in large amounts. And 6) depositing Te atoms on the surface of the Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of the Knudsen diffusion furnace is 220 ℃ and the deposition time is 15min. The reconstructed stripes were completely removed and the underlying tetragonal Au atoms were exposed.

Claims (8)

1. A method for removing a gold (100) surface reconstruction layer, comprising the steps of:
1) Fixing Au (100) single crystals on a molybdenum plate;
2) Degassing by a knudsen diffusion furnace; the temperature of the Knudsen diffusion furnace is increased to 100 ℃ at the speed of 20 ℃/min through a control panel, and the air pressure is slightly increased at the moment; when the air pressure begins to drop, the temperature is gradually increased at the speed of 2 ℃/min according to the amplitude of 10 ℃; observing the process of first rising and then falling of the air pressure and then continuing to heat; when the temperature of the knudsen diffusion furnace is 160 ℃, the air pressure is slowly increased all the time, impurities are removed, and Te powder begins to slowly evaporate;
3) Pretreating an Au (100) substrate;
4) Determining the relationship between the temperature of the Knudsen diffusion furnace and the Te evaporation capacity;
5) Depositing a small amount of Te on the surface of the Au (100);
6) Further depositing Te on the basis of the step 5);
7) Depositing Te in large quantity on the basis of the step 6).
2. The method for removing the gold (100) surface reconstruction layer as claimed in claim 1 wherein step 1) said Au (100) single crystal is in appearance of two superimposed, coaxial cylinders of non-uniform diameter with an annular step plane between them.
3. The method for removing the gold (100) surface reconstruction layer according to claim 2, wherein the step 1) is specifically:
the bottom surface of a cylinder with a larger Au (100) single crystal diameter is tightly attached to a molybdenum plate, a hole is cut in the center of the tantalum foil, and the size of the hole is consistent with that of the cylinder with the smaller Au (100) single crystal diameter; sleeving a tantalum foil on an Au (100) monocrystal, cutting off a small block at each of four corners of the tantalum foil, and welding the four sides of the tantalum foil on a molybdenum plate by using a spot welding machine; fixing Au (100) single crystals on a molybdenum plate through the extrusion effect of the tantalum foil and the annular step surface; the large cylindrical part of the Au (100) single crystal is wrapped by tantalum foil, and the exposed cylindrical surface with a smaller diameter is used as the surface of the material to be deposited later.
4. The method for removing the gold (100) surface reconstruction layer according to claim 1, wherein the step 3) is specifically:
at 1.2X 10 -5 In the argon atmosphere of mbar, accelerated argon ions are sprayed to the surface of an Au (100) substrate through an ion gun, impurities on the surface of the substrate form a suspension layer under the bombardment of the argon ions, and the suspension layer is pumped out of a cavity through a molecular pump and a mechanical pump; then at<10 - 9 Adding under mbar vacuumHeat treatment; heating by radiation, and cooling after the temperature is raised to 400 ℃ and stays for 10 min; when the temperature is reduced to about 80 ℃, starting the next sputtering-heating treatment; the circulation is carried out for 4-5 times, and clean substrate surface can be obtained.
5. The method for removing the gold (100) surface reconstruction layer as claimed in claim 1, wherein the step 4) is specifically:
and depositing Te on the surface of the Au (100) under the conditions that the substrate is not heated and the temperature of a Knudsen diffusion furnace is 160 ℃,170 ℃ and 200 ℃ respectively, wherein the deposition time is 15min.
6. The method for removing the gold (100) surface reconstruction layer according to claim 1, wherein the step 5) is specifically:
depositing Te atoms on the surface of Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of a Knudsen diffusion furnace is 170 ℃ and the deposition time is 15 min; a small amount of Te atoms are adsorbed at the reconstructed stripe fracture, while on the reconstructed stripe side without fracture, no Te atoms are adsorbed.
7. The method for removing the gold (100) surface reconstruction layer as claimed in claim 1, wherein the step 6) is specifically:
depositing Te atoms on the surface of Au (100) under the conditions that the temperature of the substrate is 400 ℃, the temperature of the Knudsen diffusion furnace is 200 ℃ and the deposition time is 15min on the basis of the step 5); gradually removing the reconstructed stripes from the fracture adsorbing the Te atoms; the Au (100) surface removed from reconstruction and the Au (100) surface not removed from reconstruction exist at the same time.
8. The method for removing the gold (100) surface reconstruction layer as claimed in claim 1, wherein the step 7) is specifically:
depositing Te atoms on the surface of Au (100) under the conditions that the substrate temperature is 400 ℃, the temperature of a Knudsen diffusion furnace is 220 ℃ and the deposition time is 15min on the basis of the step 6); the reconstructed stripes were completely removed and the underlying tetragonal Au atoms were exposed.
CN202210984358.7A 2022-08-17 2022-08-17 Method for removing surface reconstruction layer of gold (100) Active CN115369359B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090205966A1 (en) * 2007-12-12 2009-08-20 James B. Kelly Electrochemical Reconstruction of Metal Surfaces
US20130216780A1 (en) * 2012-02-22 2013-08-22 Technion Research And Development Foundation Ltd. Vicinal surfaces of polycrystalline structures
CN106702320A (en) * 2015-11-13 2017-05-24 中国科学院物理研究所 Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090205966A1 (en) * 2007-12-12 2009-08-20 James B. Kelly Electrochemical Reconstruction of Metal Surfaces
US20130216780A1 (en) * 2012-02-22 2013-08-22 Technion Research And Development Foundation Ltd. Vicinal surfaces of polycrystalline structures
CN106702320A (en) * 2015-11-13 2017-05-24 中国科学院物理研究所 Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TEMPAS等: ""Lifting of the Au(100) surface reconstruction by Pt, Cr, Fe, and Cu adsorption"" *

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