CN115369355A - Metal mask for OLED pixel deposition and processing method - Google Patents
Metal mask for OLED pixel deposition and processing method Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 40
- 230000008021 deposition Effects 0.000 title claims abstract description 23
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 238000000151 deposition Methods 0.000 title description 17
- 239000013078 crystal Substances 0.000 claims abstract description 66
- 238000005096 rolling process Methods 0.000 claims description 17
- 229910001374 Invar Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 abstract description 25
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011368 organic material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/22—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling plates, strips, bands or sheets of indefinite length
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a metal mask for OLED pixel deposition and a processing method thereof.A diffraction peak intensity of a crystal face (111), a crystal face (200), a crystal face (220) and a crystal face (311) is respectively defined as I (111), I (200), I (220) and I (311); a = I (200)/{ I (111) + I (200) + I (220) + I (311) }; b = I (220)/{ I (111) + I (200) + I (220) + I (311) }; c = I (311)/{ I (111) + I (200) + I (220) + I (311) }; d = I (111)/{ I (111) + I (200) + I (220) + I (311) }; wherein A is more than 40%, B-A is less than 5% by 0%, C is less than 15%, D is less than 5%, A + B is more than or equal to 80% and less than or equal to 90%, the strength percentage difference between the crystal plane (200) and the crystal plane (220) is reduced, and the crystal grain orientation anisotropy is reduced, so that the etching uniformity and the glossiness of the crystal grain are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a metal mask for OLED pixel deposition and a processing method.
Background
The OLED is a display device driven by using an organic material, does not require a separate light source, and the organic material itself can be used as a light source and can be driven with low power consumption. In addition, the OLED is attracting attention as a display device that can exhibit infinite contrast, has a response speed about 1000 times faster than the LCD, and can replace the LCD with an excellent viewing angle.
In particular, an organic material included in an emission layer of the OLED may be deposited on a substrate through a deposition mask called a Fine Metal Mask (FMM), and the deposited organic material may form a pattern corresponding to a pattern formed on the deposition mask to serve as a pixel. Specifically, the deposition mask includes through holes formed at positions corresponding to the pixel patterns, and organic materials, for example, red, green, and blue, may be deposited on the substrate through the through holes. Accordingly, a pixel pattern may be formed on the substrate.
When the sizes of the through holes of the deposition mask forming the pixel pattern are not uniform, the uniformity of the organic material formed on the target substrate to be deposited may be reduced together, and thus, the pixel pattern of the target substrate to be deposited may also be non-uniformly formed.
An invention patent with application number 2019800698226 entitled alloy plates and deposition masks comprising the alloy plates discloses: [ equation 1] } A = I (200)/{ I (200) + I (220) + I (111) }; the diffraction intensity ratio of I (220) is defined by the following equation 2, [ equation 2] B = I (220)/{ I (200) + I (220) + I (111) }, wherein a has a value of 0.5 to 0.6, B has a value of 0.3 to 0.5, and a may be greater than B, to reduce surface pits of the metal plate and improve the efficiency of a deposition mask manufactured by the metal plate by controlling the depth of the surface pits.
However, the difference of the diffraction peak crystal plane intensity percentages of the crystal plane (200) and the crystal plane (220) is large, the crystal orientation anisotropy is strong, and the etching uniformity is deteriorated, wherein the deterioration of the etching uniformity shows that the island shape of the large opening has different sizes in the FMM appearance.
The invention patent application No. 2021115801233 entitled deposition mask for OLED pixel deposition discloses that the intensity percentage of the (200) diffraction peak crystal face is large, which easily causes the etched surface to form ravines, resulting in reduced surface gloss and poor uniformity of the FMM product CD opening size.
Disclosure of Invention
In order to solve the technical problems, the invention provides a metal mask for OLED pixel deposition and a processing method thereof, which reduce the strength percentage difference of a crystal plane (200) and a crystal plane (220), and reduce the grain orientation anisotropy so as to improve the etching uniformity and the glossiness of the mask.
The invention adopts the following technical scheme:
a metal mask used for OLED pixel deposition, diffraction peak intensities of a crystal plane (111), a crystal plane (200), a crystal plane (220) and a crystal plane (311) are respectively defined as I (111), I (200), I (220) and I (311);
A=Ｉ(200)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
B=Ｉ(220)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
C=Ｉ(311)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
D=Ｉ(111)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
wherein A is more than 40%, B-A is less than 5% by 0%, C is less than 15%, D is less than 5%, A + B is more than or equal to 80% and less than or equal to 90%, the strength percentage difference between the crystal plane (200) and the crystal plane (220) is reduced, and the crystal grain orientation anisotropy is reduced, so that the etching uniformity and the glossiness of the crystal grain are improved.
Preferably, 0% < B-ase:Sub>A <3%, and the difference in intensity percentage of the crystal planes (200) and (220) is further reduced to improve the etching uniformity and the glossiness.
Preferably, the metal mask Invar alloy is made of metal.
Preferably, the Invar alloy has a recrystallized structure grain size of >9 grade.
Preferably, the Invar alloy finish rolled grain structure has an aspect ratio >5.
A processing method of ase:Sub>A metal mask for OLED pixel deposition comprises ase:Sub>A plurality of rolling processes, wherein the deformation of the previous rolling process before final rolling is more than or equal to 75%, the deformation of the final rolling process is more than or equal to 70%, in the obtained metal mask, A is more than 40%, B-A is more than 0% -5%, C is less than 15%, D is less than 5%, A + B is more than or equal to 80% and less than or equal to 90%; wherein diffraction peak intensities of the crystal plane (111), the crystal plane (200), the crystal plane (220), and the crystal plane (311) are defined as I (111), I (200), I (220), and I (311), respectively;
A=Ｉ(200)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
B=Ｉ(220)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
C=Ｉ(311)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
d = I (111)/{ I (111) + I (200) + I (220) + I (311) }, by controlling the deformation amount of the rolling pass of the last two rolling passes to reduce the strength percentage difference of the crystal planes (200) and (220), the grain orientation anisotropy is reduced to improve the etching uniformity and the glossiness thereof.
Compared with the prior art, the invention has the following advantages: due to the fact that the intensity percentage of the diffraction peak crystal face of the crystal face (220) is increased, the Invar etching rate is reduced, the large-opening evaporation angle of an FMM product is easily increased, and when the evaporation angle is larger, shadow is larger; the increase of the intensity percentage of the crystal face (200) diffraction peak is easy to form gullies on the etched surface, which causes the reduction of the surface glossiness and the deterioration of the uniformity of the CD opening size of the FMM product; the invention provides a metal mask for OLED pixel deposition and a processing method thereof, which can reduce the strength percentage difference of a crystal plane (200) and a crystal plane (220), reduce the grain orientation anisotropy and improve the etching uniformity and the glossiness.
Drawings
FIG. 1 is an SEM image of large-opening abnormal region island.
FIG. 2 is an SEM image of island shape of a normal region of a large opening.
FIG. 3 is a schematic view of a vapor deposition corner structure.
FIG. 4 is an optical microscope photograph of the etched surface of example 1.
FIG. 5 is an optical microscope photograph of the etched surface of comparative example 3.
FIG. 6 is a schematic representation of each crystal plane.
Detailed Description
In order to facilitate understanding of the technical solutions of the present invention, the following detailed description is made with reference to the accompanying drawings and specific embodiments.
Example 1
As shown in fig. 1-5, a metal reticle for OLED pixel deposition is an Invar alloy, specifically an alloy containing iron and nickel, and is formed with a crystal structure of face-centered cubic (FCC) structure.
In the case of an FCC structure, each surface may have a different atomic density. That is, the metal mask may have a different atomic density for each crystal plane. Specifically, the atomic density of any one crystal plane may be greater than or less than the atomic density of another crystal plane.
Therefore, when etching a metal mask, the etching rate may be different according to the direction of each crystal plane. Due to the difference in etching rate according to the direction of the crystal plane, when the surface treatment is performed on the metal mask, the surface of the metal mask may be unevenly etched.
Therefore, after the surface treatment of the metal mask, a plurality of grooves having a large-opening island-like structure may be generated on the surface of the metal mask.
In order to solve the above-described problems, the metal mask according to the embodiment may reduce pits and the like due to the uneven etching by controlling the ratio of the plurality of crystal planes of the metal mask.
Specifically, in this embodiment, the Diffraction peak intensities of the crystal plane (111), the crystal plane (200), the crystal plane (220), and the crystal plane (311) of the metal mask are respectively defined as I (111), I (200), I (220), and I (311), and the Diffraction peak intensities can be measured by X-Ray Diffraction;
the positions of the crystal plane (111), the crystal plane (200), the crystal plane (220) and the crystal plane (311) are shown in fig. 6, and the crystal plane (311) represents a connection surface between one third of the point on the X axis of the metal mask and the vertexes of the Y axis and the Z axis.
In addition, in the present example, the diffraction intensity ratios of the four diffraction peak intensities are also defined,
A=Ｉ(200)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
B=Ｉ(220)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
C=Ｉ(311)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
D=Ｉ(111)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
as shown in fig. 1-2, if the difference between the diffraction peak intensity percentages of the crystal planes (220) and (200) is larger, the grain orientation anisotropy is strong, and the etching uniformity is deteriorated, wherein the deteriorated etching uniformity is represented by the island size of the large opening in the FMM appearance, and the island size difference between the abnormal region and the normal region is about X-Y =3 um. In this example, the EDS composition analysis was performed on the island region, and the abnormal region was not different from the normal region in composition, which proved that the etching was not different due to the presence of foreign matter or the difference in composition. Table 1 is a table of the composition analysis of the island regions corresponding to fig. 1:
table 2 is a table of the composition analysis of the island regions corresponding to fig. 2:
it can be confirmed from tables 1 and 2 that the island-like region unevenness is not caused by compositional abnormality because the proportions of Fe and Ni are uniform and in agreement with the proportions of INVAR iron-nickel alloy.
If the intensity percentage of the diffraction peak crystal face of the crystal face (220) is increased, the Invar etching rate is reduced, a large opening (an evaporation angle theta is increased) of an FMM product is easy to cause, and when the evaporation angle is larger, the invalid light-emitting area is larger; the increase of the intensity percentage of the (200) diffraction peak crystal face tends to form a gap on the etched surface, resulting in a decrease in surface gloss and a deterioration in uniformity of the size of the FMM product CD opening.
The metal mask is cut along the etched region to obtain the structure shown in fig. 3, and the θ angle is the evaporation angle.
Therefore, the smaller the difference between the diffraction peak intensities of the crystal planes (220) and (200) is, the better, in this example, A is greater than 40%, B-A is less than 5% and C is less than 15%, D is less than 5%, A + B is 80% or more and less than 90%.
And then, carrying out surface treatment on the surface of the metal mask plate by using an etchant. Specifically, a metal mask is etched by using ferric chloride at 50 ℃, the etching thickness is 10um, and the surface glossiness is detected by using a glossiness meter.
Subsequently, the gloss meter was subjected to surface gloss detection, and it was observed whether etching was defective after formation of the through-hole.
In this embodiment, when the difference between the size and the normal via size exceeds 2um, it is determined that etching is defective.
Table 1 is a table comparing the results of comparative example 1 to comparative example 4 and example 1 to example 2.
Table 1: table for comparing results
The analysis in table 1 shows that the difference between ase:Sub>A and B is reduced to ase:Sub>A value of ase:Sub>A >40% and 0% < B-ase:Sub>A <5%, as in examples 1 and 2, the etching uniformity and the gloss performance are better than those of comparative examples 1 to 4. Wherein the recrystallized structure grain size of the metal mask is greater than 9 grade, and the grain structure aspect ratio is greater than 5. Specifically, referring to fig. 4 to 5, it can be clearly seen that the gloss of example 1 is greatly improved compared to that of comparative example 3, where a =43.16% of example 1 is lower than a =53.65% of comparative example 3, the etched surface of comparative example 3 has many ravines, which is not favorable for FMM production, and the gloss of example 1 and comparative example 3 are 534GU and 264GU, respectively.
Therefore, it can be concluded that when A is greater than 40%, the smaller the difference between A, B, the better the etching uniformity and the gloss, i.e., in this embodiment, A is greater than 40%,0% < B-A <5%, C <15%, D <5%,80% < A + B < 90%, and ase:Sub>A high quality metal mask can be obtained.
As a preferable mode, in order to improve the etching uniformity and the glossiness thereof, the relationship between A, B may be further defined as: 0% < B-A <3%.
In order to enable the relationship among the crystal faces to satisfy A >40%,0% < B-A <5%, C <15%, D <5%,80% or more and A + B < 90%, the embodiment also provides ase:Sub>A processing method of ase:Sub>A metal mask for OLED pixel deposition, and the processing method is different from the existing processing method of the metal mask in that the method controls the deformation of the previous rolling process before the final rolling to be not less than 75%, and controls the deformation of the final rolling process to be not less than 70%, so that the relationship among the crystal faces can satisfy the relationship. Specifically, specific parameters of example 1 and example 2 are shown in table 2, wherein the rolling ratio is the deformation of the rolling process.
Table 2: rolling parameter table
In this example, the etching uniformity and the glossiness shown in table 1 were obtained by rolling the substrates of the two types of examples 1 and 2 according to the above method, so that the etching uniformity and the glossiness of the metal mask could be effectively improved by the above method.
The above is only a preferred embodiment of the present invention, and the scope of the present invention is defined by the scope defined by the claims, and several modifications and amendments made by those skilled in the art without departing from the spirit and scope of the present invention should be regarded as the scope of the present invention.
Claims (6)
1. A metal mask for OLED pixel deposition is characterized in that diffraction peak intensities of a crystal plane (111), a crystal plane (200), a crystal plane (220) and a crystal plane (311) are respectively defined as I (111), I (200), I (220) and I (311);
A=Ｉ(200)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
B=Ｉ(220)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
C=Ｉ(311)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
D=Ｉ(111)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
wherein A is more than 40%, B-A is less than 5% in 0%, C is less than 15%, D is less than 5%, A + B is more than or equal to 80% and less than or equal to 90%.
2. The metal mask of claim 1, wherein 0% < B-ase:Sub>A <3%.
3. The metal reticle for OLED pixel deposition according to claim 1, wherein the metal reticle is made of Invar alloy.
4. The metal reticle for OLED pixel deposition according to claim 3, wherein the Invar alloy has a recrystallized texture grain size >9 grade.
5. The metal reticle for OLED pixel deposition according to claim 3, wherein the Invar alloy finish rolled grain structure aspect ratio is >5.
6. A processing method of ase:Sub>A metal mask for OLED pixel deposition comprises ase:Sub>A plurality of rolling processes, and is characterized in that the deformation of the previous rolling process before final rolling is more than or equal to 75%, the deformation of the final rolling process is more than or equal to 70%, in the obtained metal mask, A is more than 40%, B-A is more than 0% -5%, C is less than 15%, D is less than 5%, A + B is more than or equal to 80% and less than or equal to 90%;
wherein the diffraction peak intensities of crystal plane (111), crystal plane (200), crystal plane (220), and crystal plane (311) are defined as I (111), I (200), I (220), and I (311), respectively;
A=Ｉ(200)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
B=Ｉ(220)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
C=Ｉ(311)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝；
D=Ｉ(111)／｛Ｉ(111)+Ｉ(200)+Ｉ(220)+Ｉ(311)｝。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106500A (en) * | 1993-10-05 | 1995-04-21 | Hitachi Metals Ltd | Thin sheet for fe-ni-based qfp lead frame with small occurrence of stamped burr and fe-ni-based qfp lead frame |
| CN1355856A (en) * | 1999-06-10 | 2002-06-26 | 日本冶金工业株式会社 | Fe-Ni based material for shadow mask |
| JP2014101543A (en) * | 2012-11-20 | 2014-06-05 | Jx Nippon Mining & Metals Corp | Metal mask material and metal mask |
| WO2020067537A1 (en) * | 2018-09-27 | 2020-04-02 | 日鉄ケミカル＆マテリアル株式会社 | Metal mask material, method for producing same, and metal mask |
| US20210313515A1 (en) * | 2018-11-19 | 2021-10-07 | Lg Innotek Co., Ltd. | Alloy metal plate and deposition mask including alloy metal plate |
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- 2022-10-25 CN CN202211308626.XA patent/CN115369355A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106500A (en) * | 1993-10-05 | 1995-04-21 | Hitachi Metals Ltd | Thin sheet for fe-ni-based qfp lead frame with small occurrence of stamped burr and fe-ni-based qfp lead frame |
| CN1355856A (en) * | 1999-06-10 | 2002-06-26 | 日本冶金工业株式会社 | Fe-Ni based material for shadow mask |
| JP2014101543A (en) * | 2012-11-20 | 2014-06-05 | Jx Nippon Mining & Metals Corp | Metal mask material and metal mask |
| WO2020067537A1 (en) * | 2018-09-27 | 2020-04-02 | 日鉄ケミカル＆マテリアル株式会社 | Metal mask material, method for producing same, and metal mask |
| CN112752860A (en) * | 2018-09-27 | 2021-05-04 | 日铁化学材料株式会社 | Metal mask material, manufacturing method thereof and metal mask |
| US20210313515A1 (en) * | 2018-11-19 | 2021-10-07 | Lg Innotek Co., Ltd. | Alloy metal plate and deposition mask including alloy metal plate |
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