CN115364596A - Crystal growth furnace production line and detection method - Google Patents
Crystal growth furnace production line and detection method Download PDFInfo
- Publication number
- CN115364596A CN115364596A CN202211315539.7A CN202211315539A CN115364596A CN 115364596 A CN115364596 A CN 115364596A CN 202211315539 A CN202211315539 A CN 202211315539A CN 115364596 A CN115364596 A CN 115364596A
- Authority
- CN
- China
- Prior art keywords
- crystal growth
- growth furnace
- suction filtration
- filtration system
- production line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000001514 detection method Methods 0.000 title claims abstract description 13
- 238000000967 suction filtration Methods 0.000 claims abstract description 181
- 238000001914 filtration Methods 0.000 claims abstract description 82
- 239000000428 dust Substances 0.000 claims abstract description 53
- 238000004140 cleaning Methods 0.000 claims abstract description 34
- 238000005303 weighing Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/42—Auxiliary equipment or operation thereof
- B01D46/44—Auxiliary equipment or operation thereof controlling filtration
- B01D46/46—Auxiliary equipment or operation thereof controlling filtration automatic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/90—Devices for taking out of action one or more units of multi-unit filters, e.g. for regeneration or maintenance
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a crystal growing furnace production line, which comprises: a crystal growth furnace; the first suction filtration system comprises a filtering mechanism and an evacuating mechanism, wherein the filtering mechanism is arranged between the evacuating mechanism and the crystal growth furnace; a second suction filtration system; the dust collecting system is used for cleaning oxides in the filtering mechanism; the crystal growth furnace is also used for detecting the evacuation speed of the evacuation mechanism; when the crystal growth furnace enters a working state, the filtering mechanism detects the weight change of the oxide generated in the crystal growth furnace and calculates the content of the oxide; if at least one of the first condition and the second condition is met, the first suction filtration system is switched to the second suction filtration system, at the moment, the second suction filtration system evacuates and filters the crystal growth furnace, and the first suction filtration system enters a cleaning mode. Through the arrangement, the device for switching evacuation and filtration can be realized without stopping the crystal growth furnace production line, and the online real-time anomaly detection of the crystal growth furnace production line is realized.
Description
Technical Field
The invention relates to the field of monocrystalline silicon manufacturing, in particular to a crystal growth furnace production line and a detection method.
Background
At present, the crystal growing furnace is a single crystal growing device, and with the rapid development of photovoltaic technology, the industry has also developed rapidly, and the single crystal growing is required to be carried out in vacuum and inert gas.
In the current production process, each crystal growth furnace platform is provided with a main vacuum pump and a centralized vacuum pump, the main vacuum pump is always in a working state from the beginning of production to the whole link of cleaning the oxides of the filter tank, and therefore the inside of the crystal growth furnace is always in a negative pressure state. After the growth of the single crystal rod is finished, a re-feeding link is needed, namely, polycrystalline silicon is fed again, and at the moment, a centralized vacuum pump is needed to intervene for working, so that the crystal growth furnace platform is always in a production and use state of negative pressure, even vacuum and high temperature.
In production, the filter tank, the main vacuum pump and the crystal growth furnace platform all have the condition of needing maintenance, the filter tank needs to be cleaned at intervals, the vacuum pump is damaged and needs to be maintained or replaced, but the crystal growth furnace platform in high-temperature vacuum can be maintained and cleaned after being suspended every time of cleaning and maintenance, the loss of production stop can be caused in the period, and simultaneously, the crystal growth furnace platform also needs to be cleaned of oxides after continuously running for a certain time.
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide a crystal growth furnace production line capable of detecting the operation condition on line and switching a suction filtration system in real time.
In order to achieve the purpose, the invention adopts the following technical scheme:
a crystal growth furnace production line, comprising: the crystal growth furnace is used for growing monocrystalline silicon; the first suction filtration system comprises a filtering mechanism and an evacuating mechanism, the evacuating mechanism is used for evacuating the crystal growth furnace, the filtering mechanism is arranged between the evacuating mechanism and the crystal growth furnace, and the filtering mechanism is used for filtering dust in the crystal growth furnace; the dust collecting system is used for cleaning oxides in the filtering mechanism; the crystal growth furnace is also used for detecting the evacuation speed of the evacuation mechanism; the crystal growth furnace production line also comprises a second suction filtration system; when the crystal growth furnace enters a working state, the filtering mechanism detects the weight change of the oxide generated in the crystal growth furnace and calculates the content of the oxide; if at least one of the first condition and the second condition is met, the first suction filtration system is switched to a second suction filtration system, at the moment, the second suction filtration system evacuates and filters the crystal growth furnace, and the first suction filtration system enters a cleaning mode; the first condition is that the content of the oxide detected by the filtering mechanism is greater than or equal to the preset content, and the second condition is that the evacuation speed detected by the crystal growth furnace is greater than or equal to the preset speed.
Further, the crystal growth furnace production line further comprises a control system, when at least one of the first condition and the second condition is met, the control system judges that the crystal growth furnace needs to be switched to the second suction filtration system, and controls the second suction filtration system to evacuate and filter the crystal growth furnace.
Further, when the first suction filtration system enters a cleaning mode, the dust collection system is communicated with the filtering mechanism, oxides in the filtering mechanism are conveyed to the dust collection system, and the dust collection system cleans the oxides.
Further, after the first suction filtration system finishes cleaning, the first suction filtration system enters a self-checking mode.
Furthermore, the structure of the second suction filtration system is consistent with that of the first suction filtration system.
In order to realize the purpose, the invention adopts the following technical scheme:
a detection method for a crystal growth furnace production line comprises the following steps: when the crystal growth furnace is in a working state, the second suction filtration system is in a standby state; the filtering mechanism detects the weight change of the oxide and calculates the content of the oxide; detecting the evacuation speed of an evacuation mechanism of the crystal growth furnace; when at least one of the first condition and the second condition is met, the first suction filtration system is switched to the second suction filtration system, at the moment, the second suction filtration system evacuates and filters the crystal growth furnace, and the first suction filtration system enters a cleaning mode.
Further, when at least one of the first condition and the second condition is met, the control system receives a weighing signal sent by the filtering mechanism, judges that the crystal growth furnace of the second suction filtration system needs to be switched according to the weighing signal, and controls the second suction filtration system to evacuate and filter the crystal growth furnace.
Further, when the first suction filtration system is switched to a second suction filtration system, the second suction filtration system is started to evacuate; and if the vacuum value of the second suction filtration system is basically consistent with that of the crystal growth furnace, stopping the first suction filtration system, and switching to the second suction filtration system to evacuate and filter the crystal growth furnace.
Further, when the first suction filtration system enters a cleaning mode, the dust collection system is communicated with the filtering mechanism, oxides in the filtering mechanism are conveyed to the dust collection system, and the dust collection system cleans the oxides.
Further, the filtering mechanism comprises an air inlet assembly, when the first suction filtration system enters the cleaning mode, the dust collection system is in a negative pressure state, and the air inlet assembly inflates the filtering mechanism so that oxides in the filtering mechanism enter the dust collection system.
The crystal growth furnace production line provided by the invention can be switched from the first suction filtration system to the second suction filtration system under the condition that the evacuation speed or the oxide content is in an abnormal state, so that the device capable of switching evacuation and filtration without stopping the crystal growth furnace production line can be realized under the condition that the crystal growth furnace production line detects that the filtering mechanism, the evacuation mechanism and the crystal growth furnace need to be cleaned or maintained, and the online real-time abnormal detection of the crystal growth furnace production line can be realized.
Drawings
FIG. 1 is a schematic view showing the connection of a crystal growth furnace line according to the present invention.
FIG. 2 is a first schematic connection diagram of the crystal growth furnace production line and the first suction filtration system of the present invention.
FIG. 3 is a schematic structural view of a filtering mechanism of a crystal growth furnace production line according to the present invention.
FIG. 4 is a cross-sectional view of a filtering mechanism of the crystal growth furnace production line of the present invention.
FIG. 5 is a schematic view showing the connection between the crystal growth furnace production line and the second type of the first suction filtration system according to the present invention.
FIG. 6 is a flow chart of the crystal growth furnace line inspection method of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the present invention in the specific embodiment will be clearly and completely described below with reference to the attached drawings in the embodiment of the present invention.
As shown in fig. 1, a crystal growth furnace production line 100 includes a crystal growth furnace 11, a first suction filtration system 12, a second suction filtration system 13, and a dust collection system 14. The crystal growth furnace 11 is at least partially connected with the first suction filtration system 12, and the crystal growth furnace 11 is at least partially connected with the second suction filtration system 13. The first suction filtration system 12 and the second suction filtration system 13 are used for evacuating and filtering the crystal growth furnace 11, and the crystal growth furnace 11 is used for melting polycrystalline materials such as polycrystalline silicon and growing dislocation-free monocrystalline silicon by a czochralski method in an inert gas (mainly nitrogen and helium). The dust collecting system 14 is connected first suction filtration system 12 at least partially, and the dust collecting system 14 is still connected second suction filtration system 13 at least partially, and dust collecting system 14 is arranged in the oxide of clearance first suction filtration system 12 and second suction filtration system 13. Specifically, crystal growth furnace production line 100 includes a plurality of crystal growth furnaces 11, and first suction filtration system 12 and second suction filtration system 13 are connected respectively to every crystal growth furnace 11, and a set of suction filtration system can be shared to a plurality of crystal growth furnaces 11 to the suction filtration system total number of configuration in the control crystal growth furnace production line 100.
Under the normal working state, one crystal growth furnace 11 is communicated with one set of suction filtration system; through the detection of the working state of the crystal growth furnace production line 100, the crystal growth furnace 11 can be switched between the first suction filtration system 12 and the second suction filtration system 13, so that the continuous work of the crystal growth furnace 11 can be kept.
Of course, it can be understood that the suction filtration system in the present application is not limited to the first suction filtration system 12 and the second suction filtration system 13, and a third suction filtration system, a fourth suction filtration system, or even more sets of suction filtration systems may be configured for the crystal growth furnace production line 100; satisfy a crystal growth stove 11 and two suction filtration system connection backs at least to realize taking place unusual back at one set of suction filtration system, crystal growth stove 11 switches into other suction filtration systems, with the continuous work demand that maintains crystal growth stove 11.
Specifically, a first valve 15 is arranged between the crystal growth furnace 11 and the first suction filtration system 12, and the first valve 15 is used for controlling the connection or disconnection between the crystal growth furnace 11 and the first suction filtration system 12. A second valve 16 is arranged between the crystal growth furnace 11 and the second suction filtration system 13, and the second valve 16 is used for controlling the connection or disconnection between the crystal growth furnace 11 and the second suction filtration system 13. The first valve 15 may be a main pump ball valve, the second valve 16 may also be a main pump ball valve, the structure of the first suction filtration system 12 is substantially identical to the structure of the second suction filtration system 13, and the function of the first suction filtration system 12 is substantially identical to the function of the second suction filtration system 13, that is, the first suction filtration system 12 and the second suction filtration system 13 may be the same device. In the present embodiment, the first suction filtration system 12 serves as a main device for evacuating and filtering the crystal growth furnace 11, and the second suction filtration system 13 serves as a backup device for evacuating and filtering the crystal growth furnace 11.
As shown in fig. 2, more specifically, taking the first suction filtration system 12 as an example, the first suction filtration system 12 includes a filter mechanism 121 and an evacuation mechanism 122, the evacuation mechanism 122 is used for evacuating the crystal growth furnace 11, the filter mechanism 121 is disposed between the evacuation mechanism 122 and the crystal growth furnace 11, and the filter mechanism 121 is used for filtering dust in the crystal growth furnace 11. Wherein the evacuation mechanism 122 may be a vacuum pump and the filter mechanism 121 may be a filter canister. In the present embodiment, a first valve 15 is provided between the crystal growth furnace 11 and the filter mechanism 121, and the first valve 15 is used to control communication or disconnection between the crystal growth furnace 11 and the filter mechanism 121. A third valve 17 is provided between the filter mechanism 121 and the evacuation mechanism 122, and the third valve 17 is used to control the connection or disconnection between the filter mechanism 121 and the evacuation mechanism 122. A fourth valve 18 is arranged between the dust collecting system 14 and the filtering mechanism 121, the fourth valve 18 is used for controlling the connection or disconnection between the filtering mechanism 121 and the dust collecting system 14, and the dust collecting system 14 is used for cleaning oxides in the filtering mechanism 121. The third valve 17 may be a stop valve, and the fourth valve 18 may also be a stop valve.
As shown in fig. 3 and 4, in this embodiment, the filter mechanism 121 includes a housing assembly 1211, a filter element assembly 1212, a support assembly 1213, a sensing module 1214, and an adjustment assembly (not shown). For clearly explaining the technical solution of the present invention, the front side, the rear side, the left side, the right side, the upper side and the lower side shown in fig. 3 are also defined to represent the front side, the rear side, the left side, the right side, the upper side and the lower side of the filtering mechanism 121. A filter cartridge assembly 1212 is disposed at least partially within the housing assembly 1211, the filter cartridge assembly 1212 being configured to filter dust from the crystal growth furnace 11. The housing assembly 1211 is substantially a sealed metal enclosure. A support assembly 1213 for supporting the filter mechanism 121 is further provided on the lower side of the housing assembly 1211 in the up-down direction of the crystal growth furnace production line 100. The support assembly 1213 is provided with a sensing module 1214, and the sensing module 1214 is used for detecting the mass change of the filter mechanism 121, indirectly detecting the mass change of the oxide in the filter mechanism 121, and calculating the content of the oxide in the filter mechanism 121. Along the up-down direction of crystal growth furnace production line 100, the adjusting component is arranged on the lower side of sensing module 1214, and the adjusting component is used for adjusting the smoothness of filtering mechanism 121 and moving filtering mechanism 121. Wherein the sensing module 1214 can be a load cell and the adjustment assembly can be an integral adjustment caster.
It can be understood that the structure of the second suction filtration system 13 and the structure of the first suction filtration system 12, and the function of the second suction filtration system 13 and the function of the first suction filtration system 12 are substantially the same, and therefore, the detailed description thereof is omitted.
The dust collection system 14 is provided as a vacuum filter chamber and the dust collection system 14 may be a dust collection chamber. The dust collection system 14 includes several air inlets and air outlets. The oxides in the filter mechanism 121 can enter the dust collection system 14 through the air inlet, and the exhaust gas in the oxides is purified through the exhaust port and discharged to the outside.
As one implementation, crystal growth furnace 11 is also used to detect the evacuation rate of evacuation mechanism 122. When the crystal growth furnace 11 is brought into the operating state, the filter mechanism 121 detects the weight change of the oxide generated in the crystal growth furnace 11, and calculates the oxide content. If at least one of the first condition and the second condition is met, the first suction filtration system 12 is switched to a second suction filtration system 13, at the moment, the second suction filtration system 13 evacuates and filters the crystal growth furnace 11, and the first suction filtration system 12 enters a cleaning mode; wherein the first condition is that the content of the oxide detected by the filtering mechanism 121 is greater than or equal to a preset content, and the second condition is that the evacuation speed detected by the crystal growth furnace 11 is greater than or equal to a preset speed; the preset content can be adjusted according to the actual condition, and the preset speed can also be adjusted according to the actual condition. Specifically, when the crystal growth furnace 11 is put into operation, the second suction filtration system 13 is in a standby state, and the dust collection system 14 is also in a standby state. The crystal growth furnace 11 generates oxides during operation, and the oxides continue to grow and enter the filter mechanism 121. The filter mechanism 121 is capable of detecting the weight change of the oxide and accurately calculating the content of the oxide in the filter mechanism 121. Meanwhile, the evacuation speed detected by the crystal growth furnace 11 is combined, when the evacuation speed exceeds at least one of the preset content or the evacuation speed exceeds the preset speed, the crystal growth furnace 11 and the first suction filtration system 12 are in a disconnection state, the first suction filtration system 12 stops working, the crystal growth furnace 11 and the second suction filtration system 13 are in a communication state, namely, the first suction filtration system 12 is switched to the second suction filtration system 13, and the second suction filtration system 13 is evacuated and filtered for the crystal growth furnace 11. Through the arrangement, the evacuation speed or the oxide content can be in an abnormal state, the evacuation speed or the oxide content can be switched to a standby evacuation and filtering device from the main evacuation and filtering device, namely, the first suction filtration system 12 is switched to the second suction filtration system 13, so that the device which can switch evacuation and filtering without shutdown of the crystal growth furnace production line 100 can be realized and online real-time abnormality detection of the crystal growth furnace production line 100 can be realized under the condition that the crystal growth furnace production line 100 detects that the filtering mechanism 121, the evacuation mechanism 122 and the crystal growth furnace 11 need to be cleaned or maintained. In the present embodiment, the first suction filtration system 12 entering the cleaning mode refers to an operation mode in which the first suction filtration system 12 cleans the oxides in the first suction filtration system 12 by the dust collection system 14. Through the arrangement, the first suction filtration system 12 can be in a stop working state under the condition that the first suction filtration system 12 is switched to the second suction filtration system 13, so that the first suction filtration system 12 can be cleaned through the dust collection system 14 under the condition that the normal work of the crystal growth furnace production line 100 is not influenced. Wherein, after the first suction filtration system 12 finishes cleaning, the first suction filtration system 12 becomes a standby device for evacuating and filtering the crystal growth furnace 11, and the second suction filtration system 13 in the working state becomes a main device for evacuating and filtering the crystal growth furnace 11.
In one implementation, the crystal growth furnace line 100 further includes a control system (not shown). The control system is connected to the sensing module 1214 and is further used for controlling the operation of the crystal growth furnace production line 100. The control system is also capable of detecting and reading the evacuation rates of the first suction filtration system 12 and the second suction filtration system 13 in real time. That is, the crystal growth furnace 11 can detect the evacuation speed of the evacuation mechanism 122 by the control system.
In particular, the sensing module 1214 can transmit the detected oxide content to the control system via a weighing signal. When at least one of the first condition and the second condition is met, the control system judges that the crystal growth furnace 11 needs to be switched to the second suction filtration system 13 according to the weighing signal, and controls the second suction filtration system 13 to evacuate and filter the crystal growth furnace 11. Through the arrangement, the crystal growth furnace 11 corresponding to the first suction filtration system 12 with abnormal work can be accurately judged through the control system, so that the second suction filtration system 13 is accurately controlled to evacuate and filter the crystal growth furnace 11, and the accuracy of the crystal growth furnace production line 100 is improved. In addition, through the arrangement, the filtering and evacuating devices of the crystal growth furnace 11 can be automatically switched through the control system, so that the working efficiency of the crystal growth furnace production line 100 is improved.
In the present embodiment, the filter mechanism 121 of the first suction filtration system 12 is a first filter mechanism, and the evacuation mechanism 122 of the first suction filtration system 12 is a first evacuation mechanism. The filtering mechanism 121 of the second suction filtration system 13 is a second filtering mechanism, and the evacuating mechanism 122 of the second suction filtration system 13 is a second evacuating mechanism. When the first suction filtration system 12 is switched to the second suction filtration system 13, the second suction filtration system 13 can acquire a vacuum value in the second filtration mechanism, and the vacuum value in the second filtration mechanism is the first vacuum value. At this time, the vacuum value in the crystal growth furnace 11 is the second vacuum value. Specifically, the second evacuation mechanism evacuates the second filter mechanism so that the first vacuum value and the second vacuum value substantially coincide. When the first vacuum value and the second vacuum value are basically consistent, the first suction filtration system 12 stops working, namely the first filtration system and the first evacuating mechanism are disconnected, the first filtration system and the crystal growth furnace 11 are disconnected, at this time, the first filtration mechanism is in a standby state, and the first evacuating mechanism is also in a standby state. Through the arrangement, the vacuum value of the crystal growth furnace 11 and the vacuum value of the second suction filtration system 13 can be kept basically consistent under the condition that the first suction filtration system 12 is switched to the second suction filtration system 13, so that the vacuum value in the crystal growth furnace 11 is kept basically unchanged, the working efficiency and the monocrystalline silicon quality of the crystal growth furnace 11 are improved, and the influence on the growth of the monocrystalline silicon due to the change of the vacuum value is prevented.
As shown in fig. 5, as an implementation manner, when the first suction filtration system 12 enters the cleaning mode, the dust collection system 14 is communicated with the filtering mechanism 121, the oxide in the filtering mechanism 121 is conveyed into the dust collection system 14, and the dust collection system 14 cleans the oxide. Specifically, when the first suction filtration system 12 enters the cleaning mode, the dust collection system 14 is converted from the standby state to the operating state. After the dust collecting system 14 performs its own evacuation purification, the control system controls the fourth valve 18 to open so as to communicate the filtering mechanism 121 with the dust collecting system 14. The fourth valve 18 has a one-way airflow locking function, i.e., the airflow can only flow from the filter mechanism 121 to the dust collecting system 14, so as to avoid the air flow from backflushing and polluting the air in the filter mechanism 121. In this embodiment, the filter mechanism 121 includes an air intake assembly 1215. When the first suction filtration system 12 enters the cleaning mode, the dust collection system 14 is under negative pressure due to the evacuation of the dust collection system 14, and at the same time, the air intake assembly 1215 inflates the filter mechanism 121, so that the oxides in the filter mechanism 121 enter the dust collection system 14. Wherein, the above operation can be carried out more than three times to realize the thorough cleaning of the first pumping filtration system 12. It can be understood that the control system can obtain the oxide content in the filtering mechanism 121 according to the weighing signal, so as to adjust the execution times of the above operations by itself, and further improve the resource utilization rate of the crystal growth furnace production line 100 on the premise of realizing the thorough cleaning of the first suction filtration system 12.
As an implementation manner, after the first suction filtration system 12 completes cleaning, the first suction filtration system 12 enters a self-inspection mode. Specifically, after first suction filtration system 12 finishes the clearance, first suction filtration system 12 becomes and evacuates and filterable spare equipment to crystal growth furnace 11, and at this moment, first suction filtration system 12 gets into the self-checking mode and indicates filter element group 1212's self-checking, first valve 15's self-checking, second valve 16's self-checking, third valve 17's self-checking and fourth valve 18's self-checking etc. through above-mentioned setting, can detect the state behind the first suction filtration system 12 execution clearance mode to improve the working effect and the accuracy of crystal growth furnace production line 100, be favorable to guaranteeing the normal work of crystal growth furnace production line 100.
In addition, as shown in fig. 6, the present application further provides a method for detecting the operating state of the crystal growth furnace production line 100. The detection method comprises the following steps:
s1: when the crystal growth furnace 11 is in a working state, the second suction filtration system 13 is in a standby state;
s2: the filtering mechanism 121 detects the weight change of the oxide and calculates the oxide content;
s3: the crystal growth furnace 11 detects the evacuation speed of the evacuation mechanism 122;
s4: when at least one of the first condition and the second condition is met, the first suction filtration system 12 is switched to the second suction filtration system 13, and at the moment, the second suction filtration system 13 evacuates and filters the crystal growth furnace 11; the first suction filtration system 12 enters a cleaning mode.
Through the steps, the evacuation speed or the oxide content can be in an abnormal state, the main evacuation and filtering device is switched to a standby evacuation and filtering device, namely the first suction filtration system 12 is switched to the second suction filtration system 13, so that the device which can switch evacuation and filtering without shutdown of the crystal growth furnace production line 100 is realized and online real-time abnormality detection of the crystal growth furnace production line 100 is realized when the crystal growth furnace production line 100 detects that the filtering mechanism 121, the evacuation mechanism 122 and the crystal growth furnace 11 need to be cleaned or maintained.
It should be noted that, although the steps in the above-mentioned flow chart or the flow chart of the drawings show a logical order, in some cases, the steps shown or described may be executed in an order different from that here, for example, the order of step S2 and step S3 may be exchanged.
As an implementation manner, in step S4, when at least one of the first condition and the second condition is satisfied, the control system receives the weighing signal sent by the filtering mechanism 121, determines that the crystal growth furnace 11 of the second suction filtration system 13 needs to be switched according to the weighing signal, and controls the second suction filtration system 13 to evacuate and filter the crystal growth furnace 11. Through the arrangement, the crystal growth furnace 11 corresponding to the first suction filtration system 12 with abnormal work can be accurately judged through the control system, so that the second suction filtration system 13 is accurately controlled to evacuate and filter the crystal growth furnace 11, and the accuracy of the crystal growth furnace production line 100 is improved. In addition, through the arrangement, the filtering and evacuating devices of the crystal growth furnace 11 can be automatically switched through the control system, so that the working efficiency of the crystal growth furnace production line 100 is improved.
As an implementation manner, in step S4, when the first suction filtration system 12 is switched to the second suction filtration system 13, the second suction filtration system 13 starts evacuation; if the vacuum value of the second suction filtration system 13 is basically consistent with the vacuum value of the crystal growth furnace 11, the first suction filtration system 12 stops working, and the second suction filtration system 13 is switched to evacuate and filter the crystal growth furnace 11. The first filtration system 12 stops working, namely the first filtration system and the first evacuation mechanism are disconnected, the first filtration system and the crystal growth furnace 11 are disconnected, and at the moment, the first filtration mechanism is in a standby state, and the first evacuation mechanism is also in a standby state. Through the arrangement, the vacuum value of the crystal growth furnace 11 and the vacuum value of the second suction filtration system 13 can be kept basically consistent under the condition that the first suction filtration system 12 is switched to the second suction filtration system 13, so that the vacuum value in the crystal growth furnace 11 is kept basically unchanged, the working efficiency and the monocrystalline silicon quality of the crystal growth furnace 11 are improved, and the influence on the growth of the monocrystalline silicon due to the change of the vacuum value is prevented.
As one implementation manner, in step S4, when the first suction filtration system 12 enters the cleaning mode, the dust collection system 14 and the filter mechanism 121 are communicated, the oxide in the filter mechanism 121 is conveyed to the dust collection system 14, and the dust collection system 14 cleans the oxide. Specifically, when the first suction filtration system 12 enters the cleaning mode, the dust collection system 14 is under negative pressure, and the air inlet component 1215 inflates the filter mechanism 121, so that the oxides in the filter mechanism 121 enter the dust collection system 14. Through the arrangement, the state of the first suction filtration system 12 after the cleaning mode is executed can be detected, so that the working effect and the accuracy of the crystal growth furnace production line 100 are improved, and the normal work of the crystal growth furnace production line 100 is favorably ensured. In this embodiment, after the first pumping filtration system 12 completes cleaning, the first pumping filtration system 12 enters a self-test mode. More specifically, after the first suction filtration system 12 finishes cleaning, the first suction filtration system 12 becomes a standby device for evacuating and filtering the crystal growth furnace 11, and at this time, the first suction filtration system 12 enters a self-checking mode, which means self-checking of the filter element assembly 1212, self-checking of the first valve 15, self-checking of the second valve 16, self-checking of the third valve 17, and self-checking of the fourth valve 18, and the like.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (10)
1. A crystal growth furnace production line, comprising:
the crystal growth furnace is used for growing monocrystalline silicon;
the first suction filtration system comprises a filtering mechanism and an evacuating mechanism, the evacuating mechanism is used for evacuating the crystal growth furnace, the filtering mechanism is arranged between the evacuating mechanism and the crystal growth furnace, and the filtering mechanism is used for filtering dust in the crystal growth furnace;
a dust collection system for cleaning oxides in the filter mechanism;
it is characterized in that the preparation method is characterized in that,
the crystal growth furnace is also used for detecting the evacuation speed of the evacuation mechanism;
the crystal growth furnace production line also comprises a second suction filtration system;
when the crystal growth furnace enters a working state, the filtering mechanism detects the weight change of the oxide generated in the crystal growth furnace and calculates the content of the oxide; if at least one of a first condition and a second condition is met, switching the first suction filtration system to the second suction filtration system, evacuating and filtering the crystal growth furnace by the second suction filtration system, and enabling the first suction filtration system to enter a cleaning mode; the first condition is that the content of the oxide detected by the filtering mechanism is greater than or equal to a preset content, and the second condition is that the evacuation speed detected by the crystal growth furnace is greater than or equal to a preset speed.
2. The crystal growth furnace production line of claim 1, further comprising a control system, wherein when at least one of the first condition and the second condition is met, the control system determines that the crystal growth furnace needs to be switched to the second pumping filtration system, and controls the second pumping filtration system to evacuate and filter the crystal growth furnace.
3. The crystal growth furnace line of claim 1 or 2, wherein when the first suction filtration system enters the cleaning mode, the dust collection system is in communication with the filter mechanism, the oxide in the filter mechanism is transported into the dust collection system, and the dust collection system cleans the oxide.
4. The crystal growth furnace line of claim 3, wherein the first pump filtration system enters a self-check mode after the first pump filtration system completes cleaning.
5. The crystal growth furnace line of claim 1 or 2, wherein the second pumping system has a structure identical to that of the first pumping system.
6. A method for inspecting a crystal growth furnace production line, which is applied to the crystal growth furnace production line according to any one of claims 1 to 5, the method comprising:
when the crystal growth furnace is in a working state, the second suction filtration system is in a standby state;
the filtering mechanism detects the weight change of the oxide and calculates the content of the oxide;
the crystal growth furnace detects the evacuation speed of the evacuation mechanism;
when at least one of the first condition and the second condition is met, the first suction filtration system is switched to the second suction filtration system, at the moment, the second suction filtration system evacuates and filters the crystal growth furnace, and the first suction filtration system enters the cleaning mode.
7. The detecting method for the crystal growth furnace production line according to claim 6, wherein when at least one of the first condition and the second condition is satisfied, the control system receives a weighing signal sent by the filtering mechanism, the control system judges that the crystal growth furnace of the second suction filtration system needs to be switched according to the weighing signal, and controls the second suction filtration system to evacuate and filter the crystal growth furnace.
8. The crystal growth furnace production line detection method according to claim 6 or 7, wherein when the first suction filtration system is switched to the second suction filtration system, the second suction filtration system starts evacuation; and if the vacuum value of the second suction filtration system is basically consistent with that of the crystal growth furnace, stopping the first suction filtration system, and switching to the second suction filtration system to evacuate and filter the crystal growth furnace.
9. The crystal growth furnace line detection method according to claim 6, wherein when the first suction filtration system enters the cleaning mode, the dust collection system is in communication with the filter mechanism, the oxide in the filter mechanism is conveyed to the dust collection system, and the dust collection system cleans the oxide.
10. The crystal growth furnace line detection method of claim 9, wherein the filter mechanism comprises an air intake assembly, when the first suction filtration system enters the cleaning mode, the dust collection system is in a negative pressure state, and the air intake assembly inflates the filter mechanism so that the oxides in the filter mechanism enter the dust collection system.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2022111707805 | 2022-09-26 | ||
| CN202211170780 | 2022-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115364596A true CN115364596A (en) | 2022-11-22 |
Family
ID=84073206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211315539.7A Pending CN115364596A (en) | 2022-09-26 | 2022-10-26 | Crystal growth furnace production line and detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115364596A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202778131U (en) * | 2012-08-22 | 2013-03-13 | 爱发科中北真空（沈阳）有限公司 | Dust filtrating device for vacuum furnace |
| CN107158843A (en) * | 2017-06-29 | 2017-09-15 | 宿州冬宇环保科技有限公司 | A kind of filter cartridge type cleaner |
| US20180290093A1 (en) * | 2015-10-09 | 2018-10-11 | Total Marketing Services | SiOx FILTRATION UNIT AND METHOD FOR OPERATING THE SiOx FILTRATION UNIT |
| CN112619306A (en) * | 2020-12-18 | 2021-04-09 | 徐州晶睿半导体装备科技有限公司 | Dust removal and filtration system of single crystal furnace, control method of dust removal and filtration system and single crystal furnace assembly |
| CN113058342A (en) * | 2021-04-13 | 2021-07-02 | 西安航空制动科技有限公司 | CVD furnace filter equipment convenient to online real-time clearance |
| CN215517724U (en) * | 2020-11-12 | 2022-01-14 | 内蒙古华耀光电科技有限公司 | Single crystal growing furnace dust collector |
-
2022
- 2022-10-26 CN CN202211315539.7A patent/CN115364596A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202778131U (en) * | 2012-08-22 | 2013-03-13 | 爱发科中北真空（沈阳）有限公司 | Dust filtrating device for vacuum furnace |
| US20180290093A1 (en) * | 2015-10-09 | 2018-10-11 | Total Marketing Services | SiOx FILTRATION UNIT AND METHOD FOR OPERATING THE SiOx FILTRATION UNIT |
| CN107158843A (en) * | 2017-06-29 | 2017-09-15 | 宿州冬宇环保科技有限公司 | A kind of filter cartridge type cleaner |
| CN215517724U (en) * | 2020-11-12 | 2022-01-14 | 内蒙古华耀光电科技有限公司 | Single crystal growing furnace dust collector |
| CN112619306A (en) * | 2020-12-18 | 2021-04-09 | 徐州晶睿半导体装备科技有限公司 | Dust removal and filtration system of single crystal furnace, control method of dust removal and filtration system and single crystal furnace assembly |
| CN113058342A (en) * | 2021-04-13 | 2021-07-02 | 西安航空制动科技有限公司 | CVD furnace filter equipment convenient to online real-time clearance |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20120067328A (en) | Substrate processing apparatus and method of displaying abnormal state of substrate processing apparatus | |
| CN214634791U (en) | Control system for multi-zone dispersed multi-bag dust collector | |
| CN115364596A (en) | Crystal growth furnace production line and detection method | |
| CN114967885A (en) | Cold volume distribution system of server liquid cooling system | |
| CN114381796B (en) | Energy-saving control system and method capable of maintaining vacuum pump without stopping furnace | |
| CN112414911A (en) | Method for monitoring running state of gas turbine inlet air filtering system in real time | |
| CN211676765U (en) | Self-adaptive control system of electrolytic aluminum purification dust remover | |
| CN112156568A (en) | Control method of cloth bag dust removal negative pressure associated combustor | |
| CN113899187B (en) | Air pressure balance control method for tunnel type sterilization dryer and tunnel type sterilization dryer | |
| CN109567671A (en) | Dust collector airflow detection device and method and dust collector | |
| CN115111162A (en) | Combined type vacuum pumping system for single crystal furnace | |
| CN210438414U (en) | Real-time helium recovery unit | |
| JP5099573B1 (en) | Vacuum pump system for energy saving of multiple vacuum devices | |
| CN211133420U (en) | Device for recovering waste heat of boiler | |
| CN112596433B (en) | Control system and method for multi-zone dispersed multi-bag dust collector | |
| CN213433435U (en) | Control system of cloth bag dust removal negative pressure associated combustor | |
| RU2743560C1 (en) | Method for automated maintenance of trouble-free operation of filter-dust arrester | |
| KR200361493Y1 (en) | The Air Pulse time controller for Bag filter | |
| CN220300840U (en) | Vacuum system and coating equipment | |
| CN218478217U (en) | Calcium carbide furnace purification pneumatic ash conveying nitrogen recovery device | |
| CN215373582U (en) | Front end device of single crystal furnace | |
| CN210874474U (en) | Bag-type dust collector capable of being overhauled in working state | |
| CN221245128U (en) | Monoammonium phosphate apparatus for producing | |
| CN218443309U (en) | Catalyst calcination system | |
| CN113087081B (en) | PTA refining mother liquor recovery method based on ceramic membrane technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20221122 |
|
| RJ01 | Rejection of invention patent application after publication |