CN115360586A - Grating laser based on pyramid array external cavity reflector - Google Patents

Grating laser based on pyramid array external cavity reflector Download PDF

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Publication number
CN115360586A
CN115360586A CN202210517946.XA CN202210517946A CN115360586A CN 115360586 A CN115360586 A CN 115360586A CN 202210517946 A CN202210517946 A CN 202210517946A CN 115360586 A CN115360586 A CN 115360586A
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CN
China
Prior art keywords
pyramid
external cavity
laser
grating
pyramid array
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CN202210517946.XA
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Chinese (zh)
Inventor
陈景标
张佳
史田田
陈昆昆
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Zhejiang Faraday Laser Technology Co ltd
Peking University
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Zhejiang Faraday Laser Technology Co ltd
Peking University
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Priority to CN202210517946.XA priority Critical patent/CN115360586A/en
Publication of CN115360586A publication Critical patent/CN115360586A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a grating laser based on a pyramid array external cavity reflector, which belongs to the technical field of laser and comprises a semiconductor laser tube, a collimating lens, a grating and the pyramid array external cavity reflector; the grating is used for outputting first-order diffraction light according to the received laser and projecting the first-order diffraction light onto the pyramid array external cavity reflector; the pyramid array external cavity reflector transmits one part of the first-order diffracted light, and reflects the other part of the first-order diffracted light to the grating to obtain second-order diffracted light; the collimating lens collimates the second-order diffraction light and projects the second-order diffraction light back to the semiconductor laser tube to form cavity feedback; the pyramid array external cavity reflector comprises a plane and a pyramid surface which are opposite, the pyramid surface is formed by a pyramid array, and the plane or the pyramid surface of the pyramid array external cavity reflector faces the grating and reflects laser through the inner surface or the outer surface of the pyramid array. The invention can provide the frequency stability of the grating laser.

Description

Grating laser based on pyramid array external cavity reflector
Technical Field
The invention belongs to the technical field of laser, and particularly relates to a grating laser based on a pyramid array external cavity reflector.
Background
The external cavity semiconductor laser is widely applied to the application fields of optical frequency standard, biomedical diagnosis, optical storage, high-resolution spectral analysis, quantum precision measurement and the like due to the advantages of compact structure, good monochromaticity and stable wavelength. The external cavity grating laser mainly has two forms of Littrow and Littman, wherein the Littrow type external cavity grating laser mainly adopts the principle that laser output by a semiconductor laser tube is projected onto a grating after passing through a collimating lens, the angle of the grating is rotated by a mechanical device so that generated first-order diffraction light is fed back to the semiconductor laser tube along an incident light path, zero-order light is used as output laser, and the angle of the grating is finely adjusted so as to realize laser output with different wavelengths; the main principle of the Littman type external cavity grating laser is that laser output by a semiconductor laser tube is projected onto a grating through a collimating lens to be generated and projected onto a plane reflector, the plane reflector reflects first-order diffraction light back to the grating and returns to the semiconductor laser tube through second-time diffraction, the position of the grating is fixed and the angle of the plane reflector is finely adjusted to realize laser output with specific wavelength.
For a Littman external cavity semiconductor laser, the stability of the laser wavelength depends on the stability of the mechanical positions of a semiconductor laser tube, a collimating lens, a grating and an external cavity reflector, in the prior art, the external cavity reflector adopts a plane mirror or a single-angle cone, the directivity of the external cavity reflector has great influence on the output laser wavelength, the instability directly influences the frequency noise of the laser, and in the prior art, the defects are as follows: 1) The plane reflection cavity mirror is sensitive to an optical angle, and the output light power is very easy to rapidly reduce due to slight angle deflection in the installation process, so that the installation difficulty is increased; 2) In the prior art, a plane external cavity reflector is easily affected by environment (vibration, temperature and the like) and aging of a fixed device, a cavity mirror of a laser resonant cavity is easy to slightly loosen, so that an original resonant mode of the laser drifts, reflected light of the cavity mirror cannot return to a laser tube according to an original light path, and a light intensity distribution mode changes, so that the output energy loss of a laser cavity is serious, and 3) the plane reflective cavity mirror has extremely high angle sensitivity, and causes deflection of a laser angle in different degrees in an installation process or aging of the device, so that the pumping unevenness of laser on a gain medium is affected, and the stability of laser wavelength is affected.
In 2020, liu Ye of the Changchun new industry electro-optical technology Limited company and the like research that a plane reflection cavity mirror is adopted as an external cavity reflection cavity mirror, the fixing mode of the plane reflection cavity mirror is generally fixed on a mechanical part by adopting solid glue, and the frequency stability of a grating laser is easily influenced by the aging of the solid glue and the interference of external mechanical vibration.
Disclosure of Invention
Aiming at the problem that the aging of a fixed device and the mechanical vibration have obvious influence on the stability of laser frequency in the prior art, the invention provides the grating laser with the pyramid array as the external cavity reflector, the grating laser which is high in stability, strong in environmental interference resistance and easy to debug is innovatively provided for the first time, and the high-stability performance of the grating laser can further improve the optical pumping effect such as the rubidium clock or cesium clock frequency stability index.
The invention provides a grating laser based on pyramid array external cavity reflector, which is characterized in that: the invention creatively provides a grating laser device realized by using the pyramid array external cavity reflector, which has high mechanical stability, breaks through the bottleneck that the frequency stability of the grating laser device is difficult to improve due to the aging of solid glue and the influence of external mechanical vibration in the prior art, realizes a high-performance grating laser device based on the pyramid array external cavity reflector by using a simple optical device, has greatly lower requirement on the environment than the grating laser device based on a plane reflector in the prior art, and greatly enhances the tolerance of the grating laser device to environmental changes, such as mechanical vibration, temperature change and the like. The invention innovatively provides the pyramid array which is simple in structure, easy to realize and long in service life as the external cavity reflector, reduces instability of output laser frequency caused by environmental factors by means of integrated and high-stability design, and can further improve the utilization efficiency of laser by optimizing the size and height of a single pyramid and controlling the size of the whole pyramid array external cavity reflector.
The technical scheme provided by the invention is as follows:
a pyramid array external cavity mirror based grating laser comprising: the device comprises a semiconductor laser tube, a collimating lens, a grating and a pyramid array external cavity reflector; the semiconductor laser tube is used for outputting laser and projecting the laser onto the collimating lens; the collimating lens is used for collimating the laser and projecting the laser onto the grating; the grating is used for outputting first-order diffraction light according to the received laser and projecting the first-order diffraction light onto the pyramid array external cavity reflector; the pyramid array external cavity reflector transmits one part of the first-order diffracted light, and reflects the other part of the first-order diffracted light to the grating to obtain second-order diffracted light; the collimating lens collimates the second-order diffraction light and projects the second-order diffraction light back to the cavity formed by the semiconductor laser tube for feedback; the pyramid array external cavity reflector comprises a plane and a pyramid surface which are opposite, the pyramid surface is formed by a pyramid array, and the plane or the pyramid surface of the pyramid array external cavity reflector faces the grating and reflects laser through the inner surface or the outer surface of the pyramid array.
Preferably, the pyramid array external cavity reflector is triangular pyramid, and the pyramid surface of the triangular pyramid array external cavity reflector is formed by a triangular pyramid array.
Preferably, the pyramid surface of the triangular pyramid type pyramid array external cavity reflector is formed by a regular triangular pyramid array, three side surfaces of each regular triangular pyramid are isosceles right triangles which are perpendicular to each other, and the bottom surface is an equilateral triangle.
Preferably, the outer surface of the pyramid array external cavity reflector is plated with a high reflection film.
Preferably, the reflection wavelength of the coating film of the pyramid array external cavity reflection cavity mirror is the same as the central wavelength of the laser output by the semiconductor laser tube.
Preferably, the length and width of the pyramid array external cavity reflecting cavity mirror are 0.5-1 inch, and the side length of the bottom surface of a single pyramid of the pyramid surface is in the micrometer order.
Preferably, the angle of inclination of the grating is adjustable.
When the grating laser works, light emitted by the semiconductor laser tube is projected onto a grating through the collimating lens, the angle of the grating is finely tuned to obtain first-order diffraction light, the first-order diffraction light is projected onto the pyramid array external cavity reflector, and the position of the grating is fastened; the pyramid array external cavity reflector reflects the first-order diffraction light to the grating, the first-order diffraction light is subjected to secondary diffraction, the obtained second-order diffraction light returns to a gain medium area in the semiconductor laser tube along the original light path, single longitudinal mode narrow line width output is achieved, and zero-order light is used as output light.
Drawings
Fig. 1 is a schematic diagram of a grating laser based on a pyramid array external cavity mirror according to an embodiment of the present invention;
in the figure: 1-semiconductor laser tube, 2-collimating lens, 3-grating, 4-pyramid array external cavity reflector.
FIG. 2 is a schematic diagram of another pyramid array external cavity mirror based grating laser in an embodiment of the present invention;
in the figure: 1-semiconductor laser tube, 2-collimating lens, 3-grating, 4-pyramid array external cavity reflector
FIG. 3 is a top view of an external cavity reflector of a triangular pyramid array according to an embodiment.
Fig. 4 is a side view of a pyramid array external cavity mirror in an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
Fig. 1 is a schematic diagram of a pyramid array external cavity mirror-based grating laser in an embodiment of the present invention, including: the laser device comprises a semiconductor laser tube 1, a collimating lens 2, a grating 3 and a pyramid array external cavity reflector 4. Light emitted by a semiconductor laser tube 1 is projected onto a grating 3 after passing through a collimating lens 2, the angle of the grating 3 is finely tuned to obtain first-order diffracted light, the first-order diffracted light is projected onto a pyramid array external cavity reflector 4, the position of the grating 3 is fastened, the inner surface of the pyramid side of the pyramid prism external cavity reflector 4 reflects the laser at multiple angles, one part of the laser penetrates through the pyramid array external cavity reflector, the other part of the laser returns to the first-order diffracted light and reflects the grating 3, the first-order diffracted light is subjected to secondary diffraction, the obtained second-order diffracted light returns to a gain medium area in the semiconductor laser tube 1 along an original light path, single longitudinal mode narrow line width output is realized, and zero-order light is used as output light.
Fig. 2 is a schematic diagram of another grating laser based on a pyramid array external cavity mirror in an embodiment of the present invention, including: the laser device comprises a semiconductor laser tube 1, a collimating lens 2, a grating 3 and a pyramid array external cavity reflector 4. Light emitted by a semiconductor laser tube 1 is projected onto a grating 3 after passing through a collimating lens 2, the angle of the harmonic grating 3 is finely adjusted to obtain first-order diffraction light, the first-order diffraction light is projected onto a pyramid array external cavity reflector 4, the position of the grating 3 is fastened, the outer surface of the pyramid side of the pyramid prism external cavity reflector 4 reflects laser light at multiple angles, one part of the laser light is transmitted, the other part of the laser light returns to the first-order diffraction light and is reflected onto the grating 3, the first-order diffraction light is subjected to secondary diffraction, the obtained second-order diffraction light returns to a gain medium area in the semiconductor laser tube 1 along the original light path, single longitudinal mode narrow linewidth output is realized, and zero-order light is used as output light.
The pyramid array external cavity reflector can be a triangular pyramid type. As shown in fig. 3, the triangular pyramid array external cavity mirror is a triangular pyramid array formed by a plurality of triangular pyramids in the same plane. The regular triangular pyramid array external cavity reflector is one of triangular pyramid array external cavity reflectors, three side surfaces of the regular triangular pyramid array external cavity reflector are mutually perpendicular isosceles right triangles, and the bottom surface of the regular triangular pyramid array external cavity reflector is an equilateral triangle. In any shape of the external cavity reflector of the pyramid array, which has a plane and a pyramid surface opposite to each other, as shown in fig. 4, the outer surface and the inner surface (in the medium) of the pyramid surface can reflect and transmit the laser light to some extent, that is, when the laser light is vertically directed to the plane, the inner surface of the pyramid surface reflects and transmits the laser light, and when the laser light is vertically directed to the pyramid surface, the outer surface of the pyramid surface reflects and transmits the laser light, and the reflected laser light returns along the original path. Therefore, no matter which side of the laser beam is irradiated on the external cavity reflector of the pyramid array, the external cavity reflector can partially reflect the laser beam in the original way and partially output the laser beam in a transmission way. The optimized laser output power and the laser line width are realized by changing the height of the triangular pyramid, the shape of the bottom edge and the inclination angle of the side surface relative to the bottom surface, and the laser line width is changed during specific implementation.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the working principle of the present invention, and are not used to limit the scope of the present invention. Specifically, in order to provide a simple and stable grating laser, the pyramid array is used as the external cavity reflector, and even in an environment with strong vibration, the laser can be output in a resonant mode as long as the laser is transmitted on the pyramid array reflector, so that the stability of a laser mode is greatly improved. It will be understood by those skilled in the art that modifications and equivalents may be made to the present invention without departing from the spirit and scope of the invention. Therefore, the protection scope of the present invention is subject to the limitation of the claims.

Claims (7)

1. A grating laser based on pyramid array external cavity reflector is characterized by comprising a semiconductor laser tube, a collimating lens, a grating and a pyramid array external cavity reflector; the semiconductor laser tube is used for outputting laser and projecting the laser onto the collimating lens; the collimating lens is used for collimating the laser and projecting the laser onto the grating; the grating is used for outputting first-order diffraction light according to the received laser and projecting the first-order diffraction light onto the pyramid array external cavity reflector; the pyramid array external cavity reflector transmits one part of the first-order diffracted light, and reflects the other part of the first-order diffracted light to the grating to obtain second-order diffracted light; the collimating lens collimates the second-order diffraction light and projects the second-order diffraction light back to the cavity formed by the semiconductor laser tube for feedback; the pyramid array external cavity reflector comprises a plane and a pyramid surface which are opposite, the pyramid surface is formed by a pyramid array, and the plane or the pyramid surface of the pyramid array external cavity reflector faces the grating and reflects laser through the inner surface or the outer surface of the pyramid array.
2. A grating laser based on pyramid array external cavity reflector according to claim 1, wherein the pyramid array external cavity reflector is triangular pyramid shaped, and the pyramid face of the triangular pyramid array external cavity reflector is composed of triangular pyramid array.
3. A grating laser based on a pyramid array external cavity reflector according to claim 2, wherein the pyramid face of the triangular pyramid type pyramid array external cavity reflector is formed of an array of regular triangular pyramids, three side faces of each regular triangular pyramid are isosceles right triangles perpendicular to each other, and the bottom face is an equilateral triangle.
4. A pyramid array external cavity mirror-based grating laser as claimed in claim 1 or 2, wherein the external surface of the pyramid array external cavity mirror is coated with a high reflection film.
5. The pyramid array external cavity mirror-based grating laser of claim 4, wherein the reflection wavelength of the plated high-reflection film of the pyramid array external cavity mirror is the same as the center wavelength of the laser light output from the semiconductor laser tube.
6. A pyramid array external cavity mirror-based grating laser as claimed in claim 1 or 2 wherein the length and width of the pyramid array external cavity mirror is 0.5-1 inch and the sides of the bottom surface of a single pyramid of the pyramid face are on the order of microns.
7. The pyramid array external cavity mirror-based grating laser of claim 1 in which the angle of inclination of the grating is adjustable.
CN202210517946.XA 2022-05-12 2022-05-12 Grating laser based on pyramid array external cavity reflector Pending CN115360586A (en)

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Publications (1)

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CN115360586A true CN115360586A (en) 2022-11-18

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