CN115354295A - Thin film preparation device and method for reducing thin film defects in thin film preparation - Google Patents
Thin film preparation device and method for reducing thin film defects in thin film preparation Download PDFInfo
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- CN115354295A CN115354295A CN202211299020.4A CN202211299020A CN115354295A CN 115354295 A CN115354295 A CN 115354295A CN 202211299020 A CN202211299020 A CN 202211299020A CN 115354295 A CN115354295 A CN 115354295A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000007547 defect Effects 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims description 37
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000007747 plating Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 187
- 239000010408 film Substances 0.000 claims description 54
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 description 21
- 239000002245 particle Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to the field of film preparation, in particular to a film preparation device and a method for reducing film defects in film preparation. The device comprises a chamber, a bearing part and a gas protection part. The bearing part is provided with an opening part, and at least part of the surface of the workpiece to be plated is exposed out of the opening part; the gas protection part is provided with a gas channel, and the gas channel is provided with a plurality of gas inlets and a gas outlet; one side of the bearing part is used for placing a plating material so as to enable the gas-phase plating material to be diffused to the exposed surface of the workpiece to be plated; the gas outlet is positioned between the bearing part and the plating material, so that gas flows out of the gas outlet to the exposed surface of the workpiece to be plated, and a flowing gas protective layer is formed on the exposed surface. A flowing gas protection layer is formed on the bottom surface of the workpiece to be plated, so that when the vacuum valve is opened to improve the pressure of the chamber and the chamber door is opened, the entering of external air flow enables particulate matters existing on the inner wall of the chamber to be blown and enter the surface of the workpiece to be plated.
Description
Technical Field
The application relates to the field of film preparation, in particular to a film preparation device and a method for reducing film defects in film preparation.
Background
During the film preparation process, especially when thicker coatings need to be prepared, the chamber is often opened, the vacuum is released, and the coating material is replenished.
However, when the vacuum is released, the cleanliness of the coating surface is often reduced due to the external air entering the chamber, and some particles are easily adsorbed on the coating surface, thereby causing poor film in the subsequent deposition process.
There is currently no good way to ameliorate this problem.
Disclosure of Invention
An object of the embodiments of the present application is to provide a thin film manufacturing apparatus and a method for reducing defects in a thin film during manufacturing of the thin film.
In a first aspect, the present application provides a thin film formation apparatus comprising:
a chamber;
the bearing part is positioned in the cavity and used for placing a workpiece to be plated, the bearing part is provided with an opening part, and at least part of the surface of the workpiece to be plated is exposed out of the opening part; and
the gas protection part is provided with a gas channel, and the gas channel is provided with a plurality of gas inlets and a gas outlet;
one side of the bearing part is used for placing a plating material so as to diffuse the vapor-phase plating material to the exposed surface of the workpiece to be plated; the gas outlet is positioned between the bearing part and the plating material, so that gas flows out of the gas outlet to the exposed surface of the workpiece to be plated, and a flowing gas protective layer is formed on the exposed surface.
The film preparation device provided by the application can effectively reduce poor coating, especially can be applied to preparation of a thicker coating, and can improve the problem of poor film. When a thicker coating is prepared, before material supplement, gas is introduced, so that the gas enters the gas channel from the gas inlet channel and flows out from the outlet, and a flowing gas protective layer is formed on the exposed surface of a workpiece to be coated. The flowing gas protection layer is formed on the exposed surface of the workpiece to be plated, so that when the vacuum valve is opened to increase the pressure of the chamber and the chamber door is opened, particle substances existing on the inner wall of the chamber and the like are blown and enter the surface of the workpiece to be plated due to the entering of external air flow. Thereby improving or even avoiding the subsequent film defect problem.
In one possible embodiment, the gas shield has a peripheral wall, the gas channel being arranged within the peripheral wall; the peripheral wall has a first end face and an opposite second end face; the air inlet is arranged on the first end face; the gas outlet is opened on the inner wall between the first end face and the second end face.
In other embodiments of the present application, the height of the gas outlet is greater than 1.0mm.
In other embodiments of the present application, the inner diameter of the peripheral wall is less than 900mm.
In other embodiments of the present application, the gas outlet forms a closed loop along the circumference of the peripheral wall.
In other embodiments of the present application, the gas-protecting means and the carrier portion are both annular in shape; the gas protection device is sleeved outside the bearing part, and the bearing part is connected to the inner wall of the cavity.
In a second aspect, the present application provides a method for reducing film defects in film production, comprising: when a film is prepared, the film preparation device of any one of the previous items is adopted; the method comprises the following steps:
when the film preparation process is interrupted and/or after the film preparation is finished, gas is introduced into the gas protection part, so that the gas enters the gas channel from the gas inlet and flows out of the gas outlet to the exposed surface of the workpiece to be plated, and a flowing gas protection layer is formed on the exposed surface.
After the supplementary plating material or the film is prepared, the chamber is required to be opened, gas is introduced before the chamber is opened to enable the bottom surface of the workpiece to be plated to form a flowing gas protection layer, the influence on the surface of a plated film caused by the entering of external gas flow is avoided, and therefore the subsequent bad film problem can be improved or even avoided.
In other embodiments of the present application, the radial component of the gas velocity at the gas outlet is controlled to be in the range of 1-20m/s.
In other embodiments of the present application, the temperature difference between the gas temperature at the gas outlet and the workpiece is controlled to be between-20 ℃ and 20 ℃.
In other embodiments of the present application, the gas is an inert gas.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a schematic view of a thin film formation apparatus according to the present application;
FIG. 2 is an enlarged view taken at II in FIG. 1; FIG. 3 is a first perspective view of the gas shield and jig assembly of the thin film formation apparatus of the present application;
FIG. 4 is a structural diagram of a second view angle of the gas protection unit and jig assembly of the thin film forming apparatus of the present application;
FIG. 5 is a view showing a structure of a first view angle of a gas shield part of the thin film formation apparatus according to the present invention;
FIG. 6 is a structural view of a gas shield part of the thin film formation apparatus according to the present application from a second perspective;
FIG. 7 is a partial view of the structure of the gas shield part of the thin film formation apparatus of the present application;
FIG. 8 is a view of a first perspective of a fixture of the thin film formation apparatus of the present application;
FIG. 9 is a structural diagram of a second view angle of a fixture of the thin film formation apparatus according to the present application;
FIG. 10 is an SEM photograph of a thin film obtained in example 1 of the present application;
FIG. 11 is an SEM image of a thin film obtained in comparative example 1 of the present application.
Icon: 100-a thin film preparation device; 110-a chamber; 120-a jig; 122-engaging lugs; 121-a carrier; 1212-an opening; 10-a workpiece to be plated; 11-bare surface; 130-gas shield; 131-an air inlet hole; 132-a peripheral wall; 1321-a first end face; 1322-a second end face; 140-a gas channel; 141-a gas outlet; 20-plating materials.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments.
Thus, the following detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The inventors found that particles are a significant cause of film defects when a thin film is produced by physical vapor deposition. The sources of particles are numerous, and particles generated by the peeling of films deposited on the surfaces of other components in the chamber due to stress variations during vapor deposition are an important source. In addition, in the preparation of thicker coatings, it is often necessary to open the chamber, release the vacuum and, replenish the coating. At this time, since the external air enters the chamber, some particles are adsorbed on the surface of the coating, and further, in the subsequent deposition process, the film is poor.
Referring to fig. 1 to 9, the present application provides a thin film formation apparatus 100 including: a chamber 110; a jig 120; and a gas shield 130.
Specifically, the jig 120 is disposed in the chamber 110; the jig 120 has a bearing part 121, and the bearing part 121 has an opening 1212; the bearing part 121 is used for placing the workpiece 10 to be plated; when the workpiece 10 to be plated is placed on the carrying portion 121, a part of the surface of the workpiece 10 to be plated is exposed at the opening portion 1212 to form an exposed surface 11, and then, during the film preparation, the vapor phase plating material is deposited on the exposed surface 11.
Further, a gas shield 130 is disposed within the chamber 110.
In some embodiments of the present application, the gas shield 130 has a peripheral wall 132, and a gas passage 140 is provided in the peripheral wall 132; the peripheral wall 132 has a first end face 1321 and an opposite second end face 1322; the first end surface 1321 is provided with a plurality of air inlet holes 131; the gas outlet 141 is opened on the inner wall between the first end surface 1321 and the second end surface 1322, and the gas inlet holes 131 are communicated with the gas outlet 141 through the gas channel 140, wherein the number of the gas inlet holes 131 can be one or more, and the gas inlet holes 131 can be arranged as required. In the embodiment, the number of the air inlet holes 131 is 36, and the air inlet holes are connected with an air source through air pipes; the gas outlet 141 is disposed in a horizontal direction and has a rectangular cross section. In another embodiment, the gas outlet 141 may also be disposed obliquely, and the cross section may be in any shape, so that a flowing gas protection layer may be formed on the exposed surface 11 of the workpiece 10 to be plated.
Further, in some embodiments of the present application, one side of the carrier 121 is used for placing a plating material, so that the plating material in a vapor phase is diffused to the exposed surface 11 of the workpiece 10 to be plated; the gas outlet 141 is located between the bearing part 121 and the plating material, so that the gas flows out from the gas outlet 141 to the exposed surface 11 of the workpiece 10 to be plated, and a flowing gas protection layer is formed on the exposed surface 11.
The film preparation device provided by the application can effectively reduce poor coating, especially can be applied to preparation of a thicker coating, and can improve the problem of poor film.
Illustratively, in the preparation of thicker coatings, it is often necessary to open the chamber, release the vacuum and, replenish the coating. At this time, before feeding, gas is introduced, so that the gas enters the gas channel 140 from the gas inlet hole 131 and flows out from the gas outlet 141, and a flowing gas protective layer is formed on the bottom surface of the workpiece 10 to be plated.
Through forming the gas protective layer that flows at the bottom surface of waiting to plate work piece 10 to can prevent to open the vacuum valve and improve the chamber pressure and open the chamber door, the entering of external air current makes the particulate matter that exists in chamber inner wall department etc. blown and enter into the surface of waiting to plate work piece 10, thereby can improve and avoid subsequent film bad problem even.
Further, in some embodiments of the present application, the gas protecting part 130 and the bearing part 121 are both annular in shape; the gas protection member 130 is disposed outside the supporting member 121, and the supporting member 121 is connected to an inner wall of the chamber 110. For example, in the embodiment shown in fig. 3 to 4, the bearing portion 121 of the jig 120 is annular, the jig 120 has a connecting lug 122, and the jig 120 is connected to the inner wall of the chamber 110 through the connecting lug 122. In other embodiments, the gas protecting part 130 may have other shapes, for example, a disk shape, and may be attached to a side surface or a bottom surface of the jig 120, or may be attached to an inner wall of the chamber 110.
In some embodiments, the chamber 110 is placed on the floor and the fixture 120 is attached to the top wall of the chamber by the attachment ears 122. The carrier 121 is suspended inside the chamber 110. The gas protection part 130 is positioned at the periphery of the bearing part 121; the plating material 20 is placed on the bottom surface of the chamber 110. When the film preparation process is interrupted or the film preparation is completed, before the chamber door is opened, gas is introduced into the gas protection part 130, so that the gas enters the gas channel 140 from the gas inlet 131 and flows out of the gas outlet 141 to the exposed surface 11 of the workpiece to be plated, and a flowing gas protection layer is formed on the exposed surface 11, thereby preventing other impurities from contacting the film on the exposed surface 11 and influencing the film quality.
In some embodiments, the evaporation material and the heating device are disposed on the bottom wall of the chamber 110, and the evaporation material is vaporized by the heating device to perform the coating.
It should be noted that the heating device may be any heating device that is conventional in the art and that enables vapor deposition of a plating material.
Further, in some embodiments of the present application, referring to fig. 1 and 2, the height D of the gas outlet 141 is greater than 1.0mm.
When the height of the gas outlet 141 is less than 1.0mm, the thickness of the gas blanket produced is too small, resulting in the possibility that particles in the chamber, particularly particles larger than 0.3 μm, may enter the surface of the workpiece to be plated. By setting the height of the gas outlet 141 to be greater than 1.0mm, a gas protective layer with sufficient thickness can be generated, the protective effect is improved, and even if the particle size is greater than 0.3 mu m, the particle size can be effectively prevented from entering the surface of the workpiece to be plated.
In actual production, the height D of the gas outlet is generally set to be less than 5.0mm. By setting the height of the gas outlet to be less than 5.0mm, not only the protection effect is good, but also the cost is optimal. If the height of the gas outlet is 5.0mm or more, in order to form a gas protective layer that can block particles larger than 0.3 μm in diameter, it is necessary to provide a higher gas flow rate, so that the production cost is too high.
Further, in some embodiments of the present application, the inner diameter of the peripheral wall 132 is less than 900mm.
When the inner diameter of the peripheral wall 132 is larger than 900mm, in order to form a complete gas protection layer, the radial component of the velocity at the outlet of the gas outlet channel needs to be larger, so that the requirement of gas flow control is improved, and when the control is not proper, the particles in the cavity are easily influenced by vortex flow and are blown to the surface of the workpiece to be plated.
Further optionally, in some embodiments of the present application, the inner diameter of the peripheral wall 132 is 10 to 900mm. Illustratively, the inner diameter of the peripheral wall 132 is 50mm, 100mm, 150mm, 200mm, 250mm, 300mm, 350mm, 400mm, 450mm, 500mm, 550mm, 600mm, 650mm, 700mm, 750mm, 800mm, or 850mm.
Further, in some embodiments of the present application, the film preparation apparatus includes a filter unit disposed in front of the gas inlet hole 131, so that the gas entering the gas inlet hole 131 enters the gas channel after passing through the filter unit.
Further, in some embodiments of the present application, the filtration device is preferably an ultra-high efficiency filter having a filtration efficiency E ≧ 99.999 for particles ≧ 0.1 μm.
Further, in some embodiments of the present application, the gas outlet 141 forms a closed loop along the circumferential direction of the peripheral wall 132, so that the gas entering the gas channel 140 from the gas inlet hole 131 is discharged from the annular gas outlet 141, thereby increasing the uniformity of the discharged gas and ensuring that a uniform flowing gas protection layer is formed on the exposed surface of the workpiece to be plated.
Further, in some embodiments of the present application, the plurality of air inlet holes 131 are evenly distributed on the first end surface 1321 of the peripheral wall 132.
By having the plurality of air intake holes 131 evenly distributed on the first end surface 1321 of the peripheral wall 132, uniform gas formation is facilitated.
Some embodiments of the present disclosure provide a method for reducing film defects in film production, comprising: when a thin film is prepared, the thin film preparation device provided by any one of the previous embodiments is adopted; the method comprises the following steps:
when the film preparation process is interrupted and/or after the film preparation is completed, gas is introduced into the gas protection portion 130, so that the gas enters the gas channel 140 from the gas inlet 131 and flows out to the exposed surface of the workpiece 10 to be plated from the gas outlet 141, and a flowing gas protection layer is formed on the exposed surface.
Further, in some embodiments of the present application, the radial component of the gas velocity at the gas outlet is controlled to be in the range of 1-20m/s.
Further optionally, in some embodiments of the present application, the radial component of the gas velocity at the gas outlet is controlled to be in the range of 2-20m/s.
Illustratively, the radial component of the gas velocity at the gas outlet is controlled to be 3m/s, 4m/s, 5m/s, 6m/s, 7m/s, 8m/s, 9m/s, 10m/s, 11m/s, 12m/s, 13m/s, 14m/s, 15m/s, 16m/s, 17m/s, 18m/s, or 19m/s.
When the inner diameter of the peripheral wall is 900mm or less, the radial component of the gas velocity at the gas outlet is preferably 1 to 20m/s. When the radial component is less than 1m/s, it is difficult to form a complete gas protective layer; when the radial component is greater than 20m/s, the velocity component perpendicular to the radial direction and facing the side of the workpiece 10 to be plated is large, so that large impact is easily generated on the plating layer, and the quality of the plating layer is further influenced.
Further, in some embodiments of the present disclosure, the temperature difference between the gas temperature at the gas outlet and the workpiece is controlled to be between-20 ℃ and 20 ℃.
The temperature of the gas is controlled before the gas is ejected from the gas channel, and the difference between the temperature of the gas at the gas outlet and the temperature of the workpiece is controlled to be-20 ℃ to 20 ℃ so that the temperature of the gas is close to the temperature of the workpiece, thereby preventing the coating on the surface of the workpiece from peeling off and other defects caused by large temperature changes due to gas blowing.
Further optionally, in some embodiments of the present application, the temperature difference between the gas temperature at the gas outlet and the workpiece is controlled to be between-19 ℃ and 19 ℃.
Illustratively, the difference between the gas temperature of the gas outlet and the temperature of the workpiece is controlled to be-18 ℃, -15 ℃, -12 ℃, -10 ℃, -8 ℃, -6 ℃, -5 ℃, -3 ℃, -2 ℃, 4 ℃, 5 ℃, 8 ℃, 10 ℃, 12 ℃, 15 ℃, or 18 ℃.
Further, in some embodiments of the present application, the gas is an inert gas. For example, a nonreactive atmosphere such as nitrogen or argon can be pumped into the chamber by a micro pump as a gas source.
The features and properties of the present application are described in further detail below with reference to examples:
example 1 and comparative example 1
Example 1 thin film formation was performed using the thin film formation apparatus 100 shown in fig. 1 to 9. The preparation process comprises the following steps:
s1: the workpiece 10 to be plated is placed on the jig 120, the jig 120 is suspended in the chamber 110, and the region of the film to be deposited of the workpiece 10 to be plated is exposed in the chamber 110.
S2: vacuumizing the chamber 110, opening a chamber heater to perform heating degassing, heating the temperature in the chamber 110 to 100-300 ℃ to perform degassing for 20-30min, controlling the temperature in the chamber 110 to be the required process temperature, and controlling the vacuum degree to be lower than 5 x 10 -3 Pa；
S3: controlling the discharge port of the plating material supply device to be exposed, starting a heater of the plating material supply device, and depositing a film on the area of the film to be deposited of the workpiece 10 to be plated;
s4: after the coating material 20 in the coating material supply device is used, closing the heater and the discharge port of the coating material supply device, and closing the ion source and the chamber heater;
s5: opening a deflation valve of the coating chamber to restore the air pressure in the chamber to normal pressure, simultaneously introducing gas into a gas inlet 131 of the gas protection part 130, so that the gas enters a gas channel 140 of the gas protection part 130 through the gas inlet 131 and flows out through a gas outlet 141, and forming a flowing gas protection layer below the area of the thin film to be deposited of the workpiece 10 to be coated, wherein the gas is argon;
s6: after the chamber 110 is returned to the normal pressure, the chamber door is opened, after the new plating material 20 is replaced, the chamber door is closed, the gas is stopped from being introduced into the gas inlet 131 of the gas protection part 130, and the procedures of S2 and S3 are repeated to continuously deposit the film on the workpiece to be plated;
s7: when the thickness of the film deposited on the workpiece 10 to be plated reaches the required thickness, closing the heater and the discharge port of the plating material supply device, closing the ion source and the chamber heater, opening a deflation valve of the plating chamber to restore the air pressure in the chamber 110 to normal pressure, simultaneously opening an air inlet device connected with the gas protection part 130, enabling the gas to enter the gas protection part 130 through an air inlet hole 131 and pass through a gas outlet 141, and forming a flowing gas protection layer below the area of the film to be deposited of the workpiece to be plated;
s8: after the chamber is returned to normal pressure, the flow rate of the gas introduced into the gas protection part 130 is gradually reduced to 0 within 5 minutes, and the chamber door is opened to complete the coating process.
The number of particles with different particle size specifications on the workpiece surface prepared by the gas protection part is shown in table 1. The SEM image of the obtained film is shown in FIG. 10.
Comparative example 1, which is different from example 1 only in that the gas guard 130 is not provided. The results of the number of particles of different particle size specifications on the surface of the prepared workpiece are shown in table 1. The SEM image of the obtained film is shown in FIG. 11.
TABLE 1
| Example 1 | Comparative example 1 | |
| Specification of particle size | Number of particles/number on workpiece surface without using gas protection device | Number of particles/number on workpiece surface after using gas protection device |
| < 0.3um | 333 | 0 |
| 0.3- |
11 | 0 |
| > 5um | 1 | 0 |
As can be seen from table 1, fig. 10 and fig. 11, when the thin film manufacturing apparatus 100 of the present application is used to manufacture a thin film, the number of particles on the surface of a workpiece can be effectively reduced, so as to improve the yield of the thin film.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A thin film formation apparatus, comprising:
a chamber;
the bearing part is positioned in the cavity and used for placing a workpiece to be plated, the bearing part is provided with an opening part, and at least part of the surface of the workpiece to be plated is exposed out of the opening part; and
a gas shield portion having a gas channel; the gas channel is provided with a plurality of gas inlet holes and a gas outlet;
one side of the bearing part is used for placing a plating material so as to diffuse the vapor-phase plating material to the exposed surface of the workpiece to be plated; the gas outlet is positioned between the bearing part and the plating material, so that gas flows out of the gas outlet to the exposed surface of the workpiece to be plated, and a flowing gas protective layer is formed on the exposed surface.
2. The apparatus for preparing a thin film according to claim 1,
the gas protection part is provided with a peripheral wall, and the gas channel is arranged in the peripheral wall; the peripheral wall has a first end face and an opposing second end face; the air inlet is formed in the first end face; the gas outlet is arranged on the inner wall between the first end face and the second end face.
3. The apparatus for preparing a thin film according to claim 1,
the height of the gas outlet is greater than 1.0mm.
4. The apparatus for preparing a thin film according to claim 2,
the inner diameter of the peripheral wall is less than 900mm.
5. The apparatus for preparing a thin film according to claim 2,
the gas outlet forms a closed loop in the circumferential direction of the peripheral wall.
6. The apparatus for preparing a thin film according to claim 2,
the gas protection part and the bearing part are both annular in shape; the gas protection part is sleeved outside the bearing part, and the bearing part is connected to the inner wall of the chamber.
7. A method for reducing film defects in film production, comprising: in the production of a film, the film production apparatus according to any one of claims 1 to 6 is used; the method comprises the following steps:
when the film preparation process is interrupted and/or after the film preparation is finished, introducing gas into the gas protection part, so that the gas enters the gas channel from the gas inlet and flows out of the gas outlet to the exposed surface of the workpiece to be plated, and a flowing gas protection layer is formed on the exposed surface.
8. The method for reducing film defects in film formation according to claim 7,
controlling the radial component of the gas velocity at the gas outlet between 1 and 20m/s.
9. The method for reducing film defects in film formation according to claim 7,
and controlling the temperature difference between the gas temperature of the gas outlet and the temperature of the workpiece to be-20 ℃.
10. The method for reducing film defects in film production according to claim 7,
the gas is an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211299020.4A CN115354295A (en) | 2022-10-24 | 2022-10-24 | Thin film preparation device and method for reducing thin film defects in thin film preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105700A (en) * | 1987-08-18 | 1988-03-30 | 浙江大学 | The aerator that sputtering source is used |
| US5205051A (en) * | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
| TW486748B (en) * | 2000-02-10 | 2002-05-11 | Hitachi Int Electric Inc | Devices and method for substrate processing |
| JP2018110221A (en) * | 2016-12-20 | 2018-07-12 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Chemical evaporation chamber for gas seal |
| CN112921396A (en) * | 2021-01-26 | 2021-06-08 | 南方科技大学 | Preparation method of single crystal graphene film |
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2022
- 2022-10-24 CN CN202211299020.4A patent/CN115354295A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105700A (en) * | 1987-08-18 | 1988-03-30 | 浙江大学 | The aerator that sputtering source is used |
| US5205051A (en) * | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
| TW486748B (en) * | 2000-02-10 | 2002-05-11 | Hitachi Int Electric Inc | Devices and method for substrate processing |
| JP2018110221A (en) * | 2016-12-20 | 2018-07-12 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Chemical evaporation chamber for gas seal |
| CN112921396A (en) * | 2021-01-26 | 2021-06-08 | 南方科技大学 | Preparation method of single crystal graphene film |
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