CN115332302A - Light-emitting diode touch display device - Google Patents

Light-emitting diode touch display device Download PDF

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Publication number
CN115332302A
CN115332302A CN202210967832.5A CN202210967832A CN115332302A CN 115332302 A CN115332302 A CN 115332302A CN 202210967832 A CN202210967832 A CN 202210967832A CN 115332302 A CN115332302 A CN 115332302A
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electrode
display device
touch
touch display
endpoint
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蔡嘉豪
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Innolux Corp
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Innolux Display Corp
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Priority to CN202210967832.5A priority Critical patent/CN115332302A/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0414Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The invention provides a light-emitting diode touch display device which comprises a thin film transistor substrate and a light-emitting element. The thin film transistor substrate is provided with a substrate and a thin film transistor structure, wherein the thin film transistor structure is arranged on the substrate and comprises a driving transistor. The light-emitting element is arranged on the thin film transistor structure and is provided with a first endpoint electrode, a light-emitting layer and a second endpoint electrode, the first endpoint electrode is electrically connected with the driving transistor, and the light-emitting layer is clamped between the first endpoint electrode and the second endpoint electrode; the first endpoint electrode or the second endpoint electrode is used as a touch sensing electrode of the light-emitting diode touch display device.

Description

Light-emitting diode touch display device
The application is filed on 2016, 08, month and 22, and has the application number of 201610700808.X, the invention name of which is a light-emitting diode touch display device
Technical Field
The present invention relates to a touch display device, and more particularly, to a light emitting diode touch display device.
Background
With the continuous progress of science and technology, various information devices are continuously developed, such as mobile phones, tablet computers, ultra-light and thin notebook computers, satellite navigation, and the like. In addition to the keyboard or mouse input or operation, the touch control technique is a very intuitive and popular way to control the information device. The touch device has a humanized and visualized input operation interface, so that users at any age can directly select or control the information equipment by fingers or a touch pen.
Most of the touch technologies today are Multi-touch (Multi-touch) technologies with two-dimensional (2D) planes, which utilize, for example, a finger touching a display surface to accurately determine a touch position of the finger, and further generate a corresponding control function. In addition, in addition to the two-dimensional touch technology, in order to sense the pressing force in the direction perpendicular to the display surface (Z axis), a capacitive pressure sensing technology is generally used to sense the pressing force in the Z axis direction, so as to generate a corresponding control function.
Disclosure of Invention
The invention provides a light-emitting diode touch display device which comprises a thin film transistor substrate and a light-emitting element. The thin film transistor substrate is provided with a substrate and a thin film transistor structure, wherein the thin film transistor structure is arranged on the substrate and comprises a driving transistor. The light-emitting element is arranged on the thin film transistor structure and is provided with a first endpoint electrode, a light-emitting layer and a second endpoint electrode, the first endpoint electrode is electrically connected with the driving transistor, and the light-emitting layer is clamped between the first endpoint electrode and the second endpoint electrode. The first endpoint electrode or the second endpoint electrode is used as a touch sensing electrode of the light-emitting diode touch display device.
In one embodiment, the driving modes of the led touch display device include a full-time driving mode and a time-sharing driving mode.
In one embodiment, in the time-sharing driving mode, a frame time of the led touch display device includes a display period and a sensing period.
In one embodiment, the first terminal electrode is connected to a first power line, the second terminal electrode is connected to a second power line, and during the sensing period, at least one first pulse signal is transmitted to the touch sensing electrode, and at least one second pulse signal is transmitted to the first power line or the second power line.
In one embodiment, the driving transistor is turned off during the sensing period.
In one embodiment, the first terminal electrode is connected to a first power line, the second terminal electrode is connected to a second power line, and a voltage applied to the first power line is less than a voltage applied to the second power line during the sensing period.
In an embodiment, the touch sensing electrode includes a plurality of electrode pads, and each electrode pad is electrically connected to at least one trace.
In one embodiment, the led touch display device further includes a reference electrode disposed corresponding to the electrode pads of the touch sensing electrode.
In an embodiment, the led touch display device further includes a flexible layer located between the reference electrode and the touch sensing electrode.
In one embodiment, a portion of the electrode pads is used for sensing touch signals in a first direction and a second direction, and another portion of the electrode pads is used for sensing touch signals in a third direction perpendicular to the first direction and the second direction respectively.
The invention also provides a light emitting diode touch display device, which comprises a thin film transistor substrate, a light emitting element and a touch sensing electrode. The thin film transistor substrate is provided with a substrate and a thin film transistor structure, wherein the thin film transistor structure is arranged on the substrate and comprises a driving transistor. The light-emitting element is arranged on the thin film transistor structure and is provided with a first endpoint electrode, a light-emitting layer and a second endpoint electrode, the first endpoint electrode is electrically connected with the driving transistor, and the light-emitting layer is clamped between the first endpoint electrode and the second endpoint electrode. The touch sensing electrode is arranged on the second endpoint electrode or between the first endpoint electrode and the substrate and is arranged corresponding to the first endpoint electrode or the second endpoint electrode.
The invention also provides a light emitting diode touch display device, which comprises a thin film transistor substrate, a light emitting element and a reference electrode. The thin film transistor substrate is provided with a substrate and a thin film transistor structure, wherein the thin film transistor structure is arranged on the substrate and comprises a driving transistor. The light-emitting element is arranged on the thin film transistor structure and is provided with a first endpoint electrode, a light-emitting layer and a second endpoint electrode, the first endpoint electrode is electrically connected with the driving transistor, and the light-emitting layer is clamped between the first endpoint electrode and the second endpoint electrode. The reference electrode is disposed corresponding to the first terminal electrode or the second terminal electrode.
In an embodiment, the first endpoint electrode or the second endpoint electrode is used as a touch sensing electrode of the led touch display device, and the touch sensing electrode includes a plurality of electrode pads, and each electrode pad is electrically connected to at least one trace.
In the light emitting diode touch display device of the present invention, the first endpoint electrode or the second endpoint electrode of the light emitting element is used as the touch sensing electrode of the light emitting diode touch display device, or the touch sensing electrode is disposed on the second endpoint electrode or between the first endpoint electrode and the substrate, and is disposed corresponding to the first endpoint electrode or the second endpoint electrode; or a reference electrode is arranged, and the reference electrode is arranged corresponding to the first endpoint electrode or the second endpoint electrode. Through the structure, the invention can integrate the process of the touch sensing electrode into the process of the thin film transistor, and integrate the circuit for controlling the touch function and the circuit for controlling the display function into the same control Integrated Circuit (IC) by utilizing a self-capacitance touch mode, thereby reducing the process of an additional touch panel and the cost of the control IC, and leading the light-emitting diode touch display device to have the advantages of simplified process and fewer components.
Drawings
Fig. 1A is a schematic partial cross-sectional view of an led touch display device according to an embodiment of the invention.
Fig. 1B is an equivalent circuit diagram of a pixel structure of a light emitting diode touch display device according to an embodiment of the invention.
Fig. 1C is a timing diagram of a time-sharing driving mode of the light emitting diode touch display device according to an embodiment of the invention.
Fig. 1D is a schematic top view of a touch sensing electrode according to an embodiment of the invention.
Fig. 2A to fig. 2C are schematic partial cross-sectional views of led touch display devices according to different embodiments of the invention.
Fig. 3 is a schematic partial cross-sectional view of a light emitting diode touch display device according to another embodiment of the invention.
Fig. 4A to 4C are schematic diagrams of reference electrodes according to different embodiments of the present invention.
Fig. 5A and 5B are schematic top views of a touch sensing electrode and a reference electrode according to different embodiments, respectively.
Fig. 6A is a schematic diagram of a control circuit of the led touch display device in the absence of touch.
Fig. 6B is a schematic diagram of a control circuit of the led touch display device during touch in a first direction and a second direction.
Fig. 6C is a schematic diagram of a control circuit of the led touch display device with three-directional touch.
Fig. 6D is a waveform diagram of the output touch signal.
Fig. 7A, fig. 7C, fig. 7D and fig. 7E are schematic partial cross-sectional views of an led touch display device according to different embodiments of the present invention.
Fig. 7B is an equivalent circuit diagram of a pixel structure of the led touch display device of fig. 7A.
Detailed Description
The following description will refer to the drawings, in which like elements are referred to by like reference numerals, for the touch display device with the light emitting diode according to some embodiments of the present invention. The drawings of all embodiments of the invention are schematic only and do not represent actual dimensions or proportions. In addition, the orientations "upper" and "lower" referred to in the following description of the embodiments are merely used to indicate relative positional relationships. Further, the formation of an element "on," "over," "under," or "beneath" another element may include direct contact between one element and another element in embodiments, or may also include other additional elements between one element and another element such that one element and another element are not in direct contact.
Referring to fig. 1A to fig. 1D, wherein fig. 1A is a schematic partial cross-sectional view of a light emitting diode touch display device 1 according to an embodiment of the present invention, fig. 1B is an equivalent circuit diagram of a pixel structure of the light emitting diode touch display device 1 according to an embodiment of the present invention, fig. 1C is a timing diagram of a time-sharing driving mode of the light emitting diode touch display device 1 according to an embodiment of the present invention, and fig. 1D is a schematic top view of a touch sensing electrode according to an embodiment of the present invention.
The light emitting diode touch display device 1 is an Active Matrix Light Emitting Diode (AMLED) touch display device, such as a smart phone, a tablet computer, an ultra-thin notebook computer or a wearable device, or other displays with touch function, but not limited thereto.
As shown in fig. 1A, the led touch display device 1 includes a thin film transistor substrate 11 and at least one light emitting element 12. In addition, the led touch display device 1 of the present embodiment further includes a pixel definition layer PDL, a protection layer BP, a trace C, a flexible layer FL, and a protection substrate CM.
The tft substrate 11 has a substrate 111 and a tft structure 112, and the tft structure 112 is disposed on the substrate 111. The substrate 111 may be a hard plate or a soft plate, and may be transparent or opaque. The hard plate is, for example, glass, and the soft plate is, for example, a flexible substrate made of, for example, but not limited to, polyimide (PI). In addition, the thin film transistor structure 112 has a plurality of transistor structures respectively corresponding to the plurality of light emitting elements 12, and the transistor structures respectively form a plurality of pixel structures with the light emitting elements 12 and are arranged in a two-dimensional matrix.
Here, as shown in fig. 1B, an equivalent circuit of a pixel structure is a circuit of 2T1C as an example, and includes a control transistor T1, a driving transistor T2, a storage capacitor CS, and a light emitting element 12. The gate of the control transistor T1 is connected to a scan line SL, the first end of the control transistor T1 is connected to a data line DL, and the second end of the control transistor T1 is connected to the gate of the driving transistor T2. A first terminal of the driving transistor T2 is connected to a first power source VDD through a first power line C1, two terminals of the storage capacitor CS are respectively connected to the gate of the driving transistor T2 and the first terminal of the driving transistor T2, a second terminal of the driving transistor T2 is connected to the anode of the light emitting element 12, and the cathode of the light emitting element 12 is connected to a second power source VSS through a second power line C2. In the present embodiment, the touch capacitor CT is a Self Capacitance (Self Capacitance) generated by the touch sensing electrode when the user touches the led touch display device 1. In the present embodiment, the control transistor T1 and the driving transistor T2 are PMOS transistors respectively, but it is to be understood that the control transistor T1 and the driving transistor T2 can also be NMOS transistors respectively in different embodiments, and the invention is not limited thereto. In addition, in different embodiments, the equivalent circuit of the pixel structure may be, for example, 4T2C, or 5T1C, 6T1C, 7T2C, or the like, and is not limited thereto.
In addition, fig. 1A shows the structure of the driving transistor T2 and the light emitting device 12 of the tft structure 112 in a pixel structure, and fig. 1A does not show the control transistor T1 and the storage capacitor CS. The light emitting device 12 is disposed on the tft structure 112 and has a first endpoint electrode 121, a second endpoint electrode 122 and a light emitting layer 123. The first terminal electrode 121 is electrically connected to the second terminal of the driving transistor T2, and the light emitting layer 123 is interposed between the first terminal electrode 121 and the second terminal electrode 122. Here, the light emitting device 12 is an Organic Light Emitting Diode (OLED) or a Light Emitting Diode (LED), and when it is forward biased, the light emitting device 12 can emit light.
In addition to the driving transistor T2, the thin film transistor structure 112 further includes a buffer layer B, a first dielectric layer ILD1, a second dielectric layer ILD2 and a planarization layer PLN.
The buffer layer B is disposed on the substrate 111, and the driving transistor T2 is disposed on the buffer layer B. The driving transistor T2 includes a gate G, a gate insulating layer GI, a channel layer a, a first electrode E1 and a second electrode E2. Here, the driving transistor T2 is a Top-gate (Top-gate) type thin film transistor, for example. In various embodiments, the driving transistor T2 may also be a Bottom-gate (Bottom-gate) thin film transistor, without limitation.
The gate insulating layer GI is disposed on the buffer layer B, and the channel layer a is disposed on the gate insulating layer GI at a position opposite to the gate G. The gate insulating layer GI of the present embodiment is disposed and covers the channel layer a. The gate insulating layer GI is made of, for example, silicon oxide, or an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, hafnium oxide, or a multilayer structure thereof. In addition, in practice, the channel layer a may comprise a low temperature poly-silicon (LTPS), amorphous silicon, or metal oxide, for example. Among them, the metal Oxide is, for example, but not limited to, indium Gallium Zinc Oxide (IGZO).
The first electrode E1 and the second electrode E2 are respectively disposed on the channel layer a, and one end of the first electrode E1 and one end of the second electrode E2 are respectively in contact with the channel layer a. When the channel layer a of the driving transistor T2 is not turned on, the first electrode E1 and the second electrode E2 are electrically separated. The first electrode E1 and the second electrode E2 may be made of a single layer or a multi-layer structure made of metal (e.g., aluminum, copper, silver, molybdenum, or titanium) or an alloy thereof. The first electrode E1 and the second electrode E2 may also be transparent conductive layers (e.g., ITO, IZO, or ITZO, \ 8230;). In addition, a portion of the conductive lines for transmitting driving signals may use the same process structure as the first electrode E1 and the second electrode E2, such as data lines (not shown in fig. 1A).
The gate G is disposed on the gate insulating layer GI and opposite to the channel layer a. Here, the gate G is located above the channel layer a. The gate G may be a single layer or a multi-layer structure made of metal (e.g., aluminum, copper, silver, molybdenum, or titanium) or an alloy thereof. The gate electrode G may also be a transparent electrode layer (e.g., ITO, IZO, or ITZO, \8230;). Some of the conductive lines for transmitting driving signals may be electrically connected to each other by using the same process structure as the gate G, such as scan lines (not shown in fig. 1A). In addition, the first dielectric layer ILD1 covers the gate insulating layer GI and the gate G, and the second dielectric layer ILD2 covers the first dielectric layer ILD 1.
In addition, the first electrode E1 and the second electrode E2 of the present embodiment are respectively contacted with the channel layer a through hole (not labeled) of the gate insulating layer GI, the first dielectric layer ILD1 and the second dielectric layer ILD 2. In various embodiments, one end of each of the first electrode E1 and the second electrode E2 may also contact the channel layer a from an opening of an etch stop (etch stop) layer, respectively, without limitation.
The planarization layer PLN is disposed on and covers the second dielectric layer ILD2, and the first terminal electrode 121 is disposed on the planarization layer PLN and connected to the second electrode E2 through a through hole (not shown) of the planarization layer PLN. In addition, the pixel defining layer PDL is disposed on the first endpoint electrode 121 and fills the through hole of the planarization layer PLN, the light emitting layer 123 and the second endpoint electrode 122 are sequentially stacked on the first endpoint electrode 121, and the second endpoint electrode 122 covers the pixel defining layer PDL. In the present embodiment, the first endpoint electrode 121 is, for example, an anode of the light emitting element 12, and the second endpoint electrode 122 is, for example, a cathode of the light emitting element 12. However, in various embodiments, the first terminal electrode 121 may also be a cathode, and the second terminal electrode 122 may be an anode, which is not limited in the present invention.
The material of the first and second endpoint electrodes 121 and 122 may be, for example, ITO, IZO, AZO, CTO, snO2, znO, ITO/Ag/ITO, or magnesium alloy, but is not limited thereto. In some embodiments, when the led touch display device 1 emits light upwards, the first endpoint electrode 121 may be an opaque metal material, and the second endpoint electrode 122 may be a transparent material; when the led touch display device 1 emits light downward, the first endpoint electrode 121 may be made of a transparent material, and the second endpoint electrode 122 may be made of an opaque metal material.
In addition, the protection substrate CM is disposed opposite to the substrate 111, and the thin film transistor structure 112 and the light emitting device 12 are sandwiched between the protection substrate CM and the substrate 111. The protective substrate CM may be a hard board such as glass or a soft board such as a flexible substrate. In addition, the passivation layer BP is an insulating layer and disposed on and covering the second endpoint electrode 122, and the trace C is disposed on the passivation layer BP and passes through a through hole H of the passivation layer BP to be connected to the second endpoint electrode 122. Here, the trace C is located on the upper side of the second endpoint electrode 122, and in different embodiments, the trace C may also be located on the lower side of the second endpoint electrode 122, or on the upper side or the lower side of the first endpoint electrode 121, which is not limited. In addition, a sealant (not shown) seals the flexible layer FL between the protection substrate CM and the protection layer BP. The sealant is, for example, UV glue or glass glue (frit), and the flexible layer FL is, for example, an air layer, such as containing nitrogen or inert gas, a flexible material layer, such as but not limited to optical clear adhesive (OCA/LOCA), optical Clear Resin (OCR), optical elastomer resin (SVR), silicone, polyimide (PI), or an inorganic composite layer (inorganic/organic/inorganic). In the present invention, the flexible layer FL may be deformed by pressing and may have a restoring force, but is not limited thereto.
Therefore, when the scan lines SL of the led touch display device 1 respectively receive scan signals to respectively turn on the control transistors T1, the corresponding data lines DL can respectively receive data signals to charge the storage capacitor CS, so that the storage voltage of the storage capacitor CS can control the driving transistor T2 to be conductive, and the first power supply VDD (e.g., + 5V) and the second power supply VSS (e.g., 0V) make the light emitting elements 12 of each pixel structure forward biased to emit light, so that the led touch display device 1 can display an image.
In order to save the process of the touch panel and use fewer components, the first endpoint electrode 121 or the second endpoint electrode 122 can be used as a touch sensing electrode of the led touch display device 1. In the present embodiment, the second endpoint electrode 122 is taken as an example of the touch sensing electrode of the light emitting diode touch display device 1, so as to sense the touch action of the user, so that the light emitting diode touch display device 1 is an In-cell (In-cell) light emitting diode touch display device, and a touch control manner of self-capacitance change is utilized. Therefore, in the present embodiment, the circuit for controlling the touch function and the circuit for controlling the display function can be integrated into the same control Integrated Circuit (IC), thereby reducing the process and material of the touch panel and the cost of the control IC. The touch sensing electrodes (i.e., the second endpoint electrodes 122) can sense touch functions in two directions (i.e., a first direction X and a second direction Y, X-Y plane).
Referring to fig. 1D, the second endpoint electrode 122 (cathode) of the light emitting device 12 is used as a touch sensing electrode. In this way, the second terminal electrode 122 can be formed into a patterned electrode pattern to serve as an electrode pad for sensing. In this embodiment, the touch sensing electrode of the led touch display device 1 includes a plurality of electrode pads P, and each electrode pad P is electrically connected to at least one trace C. The traces C of the present embodiment can respectively provide the second power source VSS during the display period and respectively provide the driving (sensing) signals to the electrode pads P of the touch sensing electrodes during the (touch) sensing period. The electrode pads P may be arranged in a two-dimensional array, and each electrode pad P may correspond to one or more pixel structures (corresponding to one or more light emitting elements 12), but is not limited thereto. In various embodiments, if the first endpoint electrode 121 (anode) of the light emitting device 12 is used as the touch sensing electrode, the second endpoint electrode 122 of each light emitting device 12 is patterned, and thus one electrode pad P may correspond to one pixel structure.
In fig. 1D, each electrode pad P is electrically connected to the trace C through 3 through holes H (corresponding to the through holes H in fig. 1A) (i.e., the trace C is electrically connected to the electrode pad P of the touch sensing electrode (the second endpoint electrode 122) through 3 through holes H). Therefore, when the finger touches the protection substrate CM and the capacitance value sensed by the electrode pad P changes, the electrical signal can be transmitted to the control IC through the trace C to know the touched position and generate a corresponding control action.
In addition, in the present embodiment, the modes for driving the led touch display device 1 may include a full-time driving mode and a time-sharing driving mode. In the full-time driving mode, the touch sensing electrode (the second endpoint electrode 122) may provide a plurality of driving signals TP, such as pulses (pulses), within the frame time FT, so as to obtain the touch signal with the capacitance variation of the touch capacitor CT. In addition, in the time-sharing driving mode, as shown in fig. 1C, each frame time FT of the led touch display device 1 may include a display period DT and a sensing period ST. The display period DT is a time for transmitting the scan signal SN to the scan line SL and the data signal DN to the data line DL to display the picture. The sensing period ST is a period for transmitting a driving signal TP (the driving signal TP of the embodiment is a signal of the second power source VSS) to the touch sensing electrode to sense a touch time of a user.
In the sensing period ST of the time-sharing driving mode, preferably, at least one first pulse signal PL1 (i.e. the driving signal TP) is transmitted to the touch sensing electrode, at least one second pulse signal PL2 is transmitted to the first power line C1 or the second power line C2, and the first pulse signal PL1 and the second pulse signal PL2 are the same correspondingly. Here, "correspond to the same" indicates that the first pulse signal PL1 and the second pulse signal PL2 are transmitted at the same time and that the pulse sizes (voltage differences) thereof are also the same. In the present embodiment, the first pulse signal PL1 (i.e., the driving signal TP) transmitted to the touch sensing electrode corresponds to the second pulse signal PL2 of the first power source VDD transmitted through the first power line C1.
In other words, the signal of the first power source VDD follows the variation of the driving signal TP transmitted to the touch sensing electrode. The reason is that if only the driving signal TP (the first pulse signal PL 1) is transmitted to the touch sensing electrode, the current flowing through the light emitting element 12 is changed, and the light emitting effect is further affected. Therefore, the waveforms of the second pulse signal PL2 of the first power source VDD and the first pulse signal PL1 transmitted to the touch sensing electrode should be the same, so as to reduce the effect caused by the change of the current flowing through the light emitting device 12, and the driving signal TP transmitted to the touch sensing electrode does not affect the light emitting effect of the light emitting device 12; preferably, during the sensing period ST, the signal waveforms of the scan signal SN transmitted to the scan line SL and the data signal DN transmitted to the data line DL are the same as those of the driving signal TP (the second power VSS) and the first power VDD, so as to further avoid the influence of the excessive load on the touch sensing electrode on the touch quality of the led touch display device.
In addition, in some embodiments, the driving transistor T2 may be controlled to be turned off during the sensing period ST to make the light emitting element 12 not emit light, so that the driving signal TP transmitted during the sensing period ST does not affect the light emission of the light emitting element 12. Specifically, during the sensing period ST, the voltage applied to the first power line C1 (i.e., the first power source VDD) is smaller than the voltage applied to the second power line C2 (i.e., the second power source VSS). For example, the first power line C1 is directly grounded, the voltage of the first power source VDD is 0 volt, and the light emitting device 12 is not forward biased or is further reverse biased without emitting light, so as to avoid affecting the light emitting effect of the light emitting device 12. Alternatively, the first power line C1 may be floated (Floating), which is not limited in the present invention. In some embodiments, a switching transistor may also be connected in series with the second end of the driving transistor T2 to control the light emission of the light emitting element 12.
However, in order to compensate for the non-light emission of the light emitting element 12 in the sensing period ST, in some embodiments, the light emitting element 12 may be driven to emit light (increase its voltage) in an Overdrive (over-drive) manner during the display period DT, so that the luminance of the light emitting element 12 is higher, the non-light emission of the light emitting element 12 in the sensing period ST is compensated by the Overdrive manner, and the average luminance value of one frame time FT is the same as the average luminance value of a whole frame when it is fully lit, thereby not affecting the overall display effect.
Moreover, regardless of the full-time driving mode or the time-division driving mode, in the prior art, when the driving transistors are applied to the thin film transistors of the active light emitting diode touch display device 1, shift of threshold voltage (Vth) of the transistors may be caused by different factors such as process, material, or device characteristics, so that the driving current of the light emitting diodes of each pixel structure may be slightly different under the same data voltage driving, thereby causing the phenomenon of non-uniform brightness of the display screen of the light emitting diode touch display device 1 (for example, mura generation). In order to improve the above phenomenon, in some embodiments, a pixel compensation circuit may also be used to compensate the uneven brightness of the image caused by the shift of the threshold voltage (Vth) of the driving transistor.
Fig. 2A to fig. 2C are schematic partial cross-sectional views of led touch display devices 1a to 1C according to different embodiments of the present invention.
As shown in fig. 2A, the main difference from fig. 1A is that the led touch display device 1A in fig. 2A does not have the protection layer BP, the trace C and the first endpoint electrode 121 use the same process and material, and the through hole H is located in the pixel definition layer PDL, so that the material of the second endpoint electrode 122 can fill the through hole H and is electrically connected to the trace C located at the lower side of the second endpoint electrode 122.
In addition, as shown in fig. 2B, the main difference from fig. 1A is that the led touch display device 1B in fig. 2B does not have a protection layer BP, the trace C and the first electrode E1 or the second electrode E2 are disposed on the second dielectric layer ILD2 by using the same process and material, and the through hole H is disposed on the pixel definition layer PDL and the planarization layer PLN, so that the material of the second endpoint electrode 122 can be filled into the through hole H and electrically connected to the trace C on the second dielectric layer ILD 2.
In addition, as shown in fig. 2C, the main difference from fig. 2B is that in the led touch display device 1C of fig. 2C, the through hole H1 of the planarization layer PLN is filled with the same material as the first endpoint electrode 121, and the through hole H2 of the pixel definition layer PDL is filled with the material of the second endpoint electrode 122 and electrically connects the materials in the through hole H1, so that the second endpoint electrode 122 is connected to the trace C through the through holes H1 and H2. In some embodiments, perforations H1 and H2 may be misaligned without overlapping.
In addition, other technical features and driving and controlling manners of the led touch display devices 1a to 1c can refer to the same elements of the led touch display device 1, and are not described again.
Fig. 3 is a schematic partial cross-sectional view of a light emitting diode touch display device 1d according to another embodiment of the invention.
The main difference between the led touch display device 1 of fig. 1A and the led touch display device 1d of the present embodiment is that, in addition to all the elements, structures and driving control methods of the led touch display device 1, the led touch display device 1d further includes a reference electrode 14, and the reference electrode 14 is disposed corresponding to the electrode pads of the touch sensing electrodes (i.e., the second endpoint electrodes 122).
In some embodiments, the reference electrode 14 may be a patterned electrode as shown in fig. 4A to 4C, or the reference electrode 14 may be a full-surface electrode instead of being patterned, without limitation. The reference electrode 14 may be disposed on the upper side surface or the lower side surface of the protection substrate CM; alternatively, a Metal frame (Metal frame) or a Metal film (Metal film) of the display device itself may be used as the reference electrode 14, and the material thereof may be transparent (such as ITO) or opaque (Metal, metal film), and is not limited. In the present embodiment, the reference electrode 14 is disposed on the lower surface of the protection substrate CM, and the material thereof is a transparent conductive material as an example. A sensing capacitor is formed by the flexible layer FL sandwiched between the reference electrode 14 and the touch sensing electrode (i.e., the second endpoint electrode 122) to sense a pressing in a third direction Z. Wherein the third direction Z is perpendicular to the first direction X and the second direction Y (XY plane), respectively.
Therefore, in the above description, the touch sensing electrode (i.e. the second endpoint electrode 122) can sense touch motions in two directions (XY plane), and the reference electrode 14 and the electrode pads P can respectively form a plurality of sensing capacitors for sensing the third direction Z.
Fig. 5A and 5B are schematic top views of a touch sensing electrode and a reference electrode according to different embodiments, respectively.
In some embodiments, as shown in fig. 5A, the electrode pads P of fig. 1D are used to sense touch signals in three directions. In other words, sensing the touch signals in three directions is also achieved by the electrode pads P, that is, the touch function in the third direction Z is integrated with the touch function in the first direction X and the second direction Y by the control IC.
Alternatively, in some embodiments, as shown in fig. 5B, a portion of the electrode pads P1 is used for sensing touch signals in the first direction X and the second direction Y (XY plane), and another portion of the electrode pads P2 is used for sensing touch signals in the third direction Z. Herein, the electrode pad P1 for sensing the touch signal in the XY plane is substantially rectangular, and the electrode pad P2 for sensing the touch signal in the third direction Z is strip-shaped, but the shape of the electrode pad may be changed according to design requirements, and is not limited to the shape disclosed in the embodiment. The electrode pads P1 and P2 are also connected to the control IC through at least one trace C, so that the number of the traces C in fig. 5B is greater than that in fig. 5A. In other words, the sensing of the touch signal in the XY plane is realized by the electrode pads P1 having a substantially rectangular shape, but the sensing of the touch signal in the third direction Z is realized by the other electrode pads P2 having other substantially elongated shapes, that is, the touch function of sensing the third direction Z is separated from the touch function of sensing the first direction X and the second direction Y by the control IC. In addition, the electrode pad P2 having a bar shape is located between two adjacent electrode pads P1.
In addition, other technical features, driving and control manners of the led touch display device 1d can refer to the led touch display device 1 described above, and are not described again.
Fig. 6A to 6D are respectively shown, wherein fig. 6A is a schematic diagram of a control circuit of the led touch display device 1D when no touch is performed, fig. 6B is a schematic diagram of a control circuit of the led touch display device 1D when touch is performed in a first direction X and a second direction Y (XY plane), fig. 6C is a schematic diagram of a control circuit of the led touch display device 1D when touch is performed in three directions (directions XYZ), and fig. 6D is a schematic diagram of a waveform of an output touch signal (Vout).
As shown in fig. 6A, the capacitance signal without touch control can be as follows:
Figure BDA0003795388970000131
in addition, as shown in fig. 6B, the capacitance signals under touch in the XY plane (two-dimensional) are as follows:
Figure BDA0003795388970000132
in addition, as shown in fig. 6C, the capacitance signals under touch in the XY plane and the Z direction (three-dimensional) are as follows:
Figure BDA0003795388970000133
where Ctp is the capacitance of the sensing electrode for sensing two-dimensional touch, cp is the capacitance of the sensing electrode for sensing three-dimensional touch, and Cf is the (touch) capacitance generated after finger contact, for example.
As shown in fig. 6D, for example, 100 units is Touch threshold (Touch threshold) of XY plane Touch, 250 units is Touch threshold of simultaneous XYZ direction (three-dimensional) Touch, and both Touch thresholds are greater than background value (60) in the absence of Touch. As can be seen from fig. 6D, a touch on the XY plane is detected at time t1, a touch in the third direction Z is further detected at time t2, and the value of the touch signal (Vout) output during the three-dimensional touch is greater than the value of the touch signal on the XY plane only. Through the value of the touch signal (Vout), the control circuit can distinguish the touch in the XY plane or the XYZ direction, thereby generating the corresponding control action.
It should be noted that, in some embodiments, the thickness of the protection substrate CM is generally thicker, for example, 0.5mm, and the thickness of the flexible layer FL is relatively thinner, for example, 100 μm or less, since the thickness of the protection substrate CM is much larger than the thickness of the flexible layer FL, in the touch and pressing in the third direction Z, the capacitance variation between the reference electrode 14 and the electrode pads P is much larger than the capacitance variation between the finger and the electrode pads P, and thus the capacitance variation caused by the finger can be ignored.
Fig. 7A to 7E are respectively shown, wherein fig. 7A, 7C, 7D and 7E are respectively schematic partial cross-sectional views of led touch display devices 1E to 1h according to different embodiments of the present invention, and fig. 7B is an equivalent circuit diagram of a pixel structure of the led touch display device 1E in fig. 7A.
As shown in fig. 7A, the main difference between the led touch display device 1e and the led touch display device 1a of fig. 2A is that the led touch display device 1e does not use the second endpoint electrode 122 as the touch sensing electrode, but additionally sets a layer of touch sensing electrode 13 in the tft structure 112. The touch sensing electrode 13 may be disposed on the second endpoint electrode 122 or between the first endpoint electrode 121 and the substrate 111, and is disposed corresponding to the first endpoint electrode 121 or the second endpoint electrode 122. The touch sensing electrode 13 of the present embodiment is disposed on the substrate 111, and is located between the buffer layer B and the substrate 111 to be disposed corresponding to the second endpoint electrode 122. In addition, a protection layer BP1 covers the touch sensing electrode 13, and the trace C is disposed on the protection layer BP1 and fills the through hole on the protection layer BP1 to connect with the touch sensing electrode 13. In addition, another protection layer BP2 covers the trace C and the protection layer BP1, and is located between the buffer layer B and the protection layer BP 1.
The touch sensing electrode 13 may include a plurality of electrode pads P of the touch sensing electrode of the above embodiments, and the detailed technical content is described in detail above and will not be described further. In addition, the led touch display device 1e of the present embodiment also includes the full-time driving mode and the time-sharing driving mode, and the specific technical content also refers to the above, and will not be described more.
In addition, as shown in fig. 7B, it is an equivalent circuit diagram of a pixel structure of the led touch display device 1 e. Here, the cathode of the light emitting element 12 is connected to the second power source VSS, and one end of the touch capacitor CT is connected to the anode of the light emitting element 12. However, in various embodiments, if the touch sensing electrode 13 is disposed on the second endpoint electrode 122, the cathode of the light emitting element 12 may be connected to the second power source VSS, and one end of the touch capacitor CT is connected to the cathode of the light emitting element 12, which is not limited.
In fig. 7B, during the sensing period ST of the time-sharing driving mode, the touch sensing electrode 13 may provide a plurality of driving signals TP, such as pulses (pulses), during the frame time FT. Preferably, during the sensing period ST, the waveforms of the signal transmitted to the scan line SL and the data line DL, the waveforms of the signal transmitted to the second power source VSS and the signal transmitted to the first power source VDD are the same as those of the signal transmitted to the driving signal TP, so as to prevent the display effect of the led touch display device 1e from being affected by the change of the current flowing through the light emitting element 12.
In addition, other technical features, driving and control manners of the led touch display device 1e can refer to the led touch display device 1 described above, and are not described again.
In addition, as shown in fig. 7C, the main difference from the led touch display device 1e of fig. 7A is that the led touch display device 1f only has a protection layer BP. The trace C of the present embodiment is disposed on the substrate 111, the protective layer BP covers the trace C, and the touch sensing electrode 13 is disposed between the buffer layer B and the protective layer BP and electrically connected to the trace C through the through hole on the protective layer BP.
In addition, as shown in fig. 7D, the main difference between the led touch display device 1f and the led touch display device 1g is that the touch sensing electrode 13 is disposed on the second dielectric layer ILD 2. The trace C is first disposed on the second dielectric layer ILD2, the protection layer BP is then covered on the trace C, and then the touch sensing electrode 13 is disposed on the protection layer BP and electrically connected to the trace C through the through hole of the protection layer BP. In addition, the planarization layer PLN completely covers the touch sensing electrode 13 and the protection layer BP.
In addition, as shown in fig. 7E, the main difference between the led touch display device 1E in fig. 7A is that the led touch display device 1h further includes a reference electrode 14, and the reference electrode 14 is disposed corresponding to the electrode pads P of the touch sensing electrode 13. In the present embodiment, the reference electrode 14 is disposed on the lower surface of the protection substrate CM, and the material thereof is a transparent conductive material as an example. The flexible layer FL is located between the reference electrode 14 and the touch sensing electrode 13 to form a sensing capacitor for sensing the pressing in the third direction Z. The technical features of the reference electrode 14 and the relative relationship with the touch sensing electrode 13 are already detailed in the above-mentioned fig. 3 to fig. 6D and the corresponding contents, and are not further described.
In addition, other technical features, driving and control manners of the led touch display devices 1e to 1h can also refer to the description of the led touch display device 1, and are not described herein again.
In summary, in the led touch display device of the present invention, the first endpoint electrode or the second endpoint electrode of the light emitting element is used as the touch sensing electrode of the led touch display device, or the touch sensing electrode is disposed on the second endpoint electrode or between the first endpoint electrode and the substrate, and is disposed corresponding to the first endpoint electrode or the second endpoint electrode; or a reference electrode is arranged, and the reference electrode is arranged corresponding to the first endpoint electrode or the second endpoint electrode. Through the structure, the invention can integrate the process of the touch sensing electrode into the process of the thin film transistor, and integrate the circuit for controlling the touch function and the circuit for controlling the display function into the same control Integrated Circuit (IC) by utilizing a self-capacitance touch mode, thereby reducing the process of an additional touch panel and the cost of the control IC, and leading the light-emitting diode touch display device to have the advantages of simplified process and fewer components.
The foregoing is by way of example only, and not limiting. It is intended that the appended claims cover any and all such modifications and variations as fall within the true spirit and scope of this present invention.

Claims (6)

1. A light emitting diode touch display device, comprising:
a thin film transistor substrate having a substrate and a transistor disposed on the substrate;
a light emitting element having a first terminal electrode electrically connected to the transistor, a light emitting layer sandwiched between the first terminal electrode and the second terminal electrode, and a second terminal electrode;
a plurality of sensing electrode pads disposed on the second terminal electrode; and
and the patterned electrode is arranged on the second endpoint electrode and is overlapped with the sensing electrode pads.
2. The light-emitting diode touch display device of claim 1, further comprising:
a pixel defining layer disposed on the first terminal electrode to expose a portion of the first terminal electrode, the first terminal electrode being electrically connected to the electrode of the transistor through a via, the via not overlapping the portion of the first terminal electrode.
3. The light emitting diode touch display device of claim 1, further comprising:
a flexible layer sandwiched between the patterned electrode and the second terminal electrode.
4. The light emitting diode touch display device of claim 1, further comprising a buffer layer disposed on the substrate, wherein the transistor is disposed on the buffer layer.
5. The light-emitting diode touch display device according to claim 1, wherein the transistor comprises a channel layer, and the channel layer comprises low temperature polysilicon.
6. The light-emitting diode touch display device according to claim 1, wherein one of the sensing electrode pads has a different area from another of the sensing electrode pads in a plan view.
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