CN115332089A - 半导体器件和在半导体器件上形成多层屏蔽结构的方法 - Google Patents
半导体器件和在半导体器件上形成多层屏蔽结构的方法 Download PDFInfo
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- CN115332089A CN115332089A CN202210325335.5A CN202210325335A CN115332089A CN 115332089 A CN115332089 A CN 115332089A CN 202210325335 A CN202210325335 A CN 202210325335A CN 115332089 A CN115332089 A CN 115332089A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 205
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 239000011651 chromium Substances 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 229910052742 iron Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 6
- WJZHMLNIAZSFDO-UHFFFAOYSA-N manganese zinc Chemical compound [Mn].[Zn] WJZHMLNIAZSFDO-UHFFFAOYSA-N 0.000 claims abstract description 6
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 6
- 239000010935 stainless steel Substances 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910000976 Electrical steel Inorganic materials 0.000 claims abstract description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 5
- JMGBWTNUFIOURV-UHFFFAOYSA-N copper iron molybdenum nickel Chemical compound [Mo].[Cu].[Fe].[Ni] JMGBWTNUFIOURV-UHFFFAOYSA-N 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- VAWNDNOTGRTLLU-UHFFFAOYSA-N iron molybdenum nickel Chemical compound [Fe].[Ni].[Mo] VAWNDNOTGRTLLU-UHFFFAOYSA-N 0.000 claims abstract description 5
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 claims abstract description 5
- -1 iron-silicon-aluminum Chemical compound 0.000 claims abstract description 5
- 229910001004 magnetic alloy Inorganic materials 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 5
- 239000003302 ferromagnetic material Substances 0.000 claims abstract 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract 4
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract 4
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract 4
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000005294 ferromagnetic effect Effects 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000005291 magnetic effect Effects 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/07—Electric details
- H05K2201/0707—Shielding
- H05K2201/0715—Shielding provided by an outer layer of PCB
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10371—Shields or metal cases
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Abstract
本公开涉及半导体器件和在半导体器件上形成多层屏蔽结构的方法。半导体器件具有衬底和设置在衬底上的电元器件。封装剂设置在衬底和电元器件上。在封装剂上形成多层屏蔽结构。多层屏蔽结构具有铁磁材料的第一层和保护层或导电层的第二层。铁磁材料可以是铁、镍、镍铁合金、铁硅合金、硅钢、镍铁钼合金、镍铁钼铜合金、铁硅铝合金、镍锌、锰锌、其他铁氧体、非晶磁性合金、非晶金属合金或纳米晶合金。第一层可以是单个、均质材料。保护层可以是不锈钢、钽、钼、钛、镍或铬。导电层可以是铜、银、金或铝。多层屏蔽结构保护电元器件免受低频和高频干扰。
Description
技术领域
本发明一般地涉及半导体器件,并且更特别地涉及在半导体器件上形成多层屏蔽结构的方法和半导体器件。
背景技术
半导体器件通常在现代电子产品中找到。半导体器件执行各种各样的功能,例如信号处理、高速计算、发射和接收电磁信号、控制电子器件、光电、以及为电视显示器产生视觉图像。半导体器件在通信、功率转换、网络、计算机、娱乐和消费产品的领域中找到。半导体器件也在军事应用、航空、汽车、工业控制器和办公设备中找到。
半导体器件,特别地在高频应用(例如射频(RF)无线通信)中,通常包含一个或多个集成无源器件(IPD)以执行必要的电功能。IPD易经受:电磁干扰(EMI)、射频干扰(RFI)、谐波失真或其他器件间干扰(例如,电容性、电感性或导电耦合,也称为串扰),它们可能干扰IPD的操作。数字电路的高速切换也产生干扰。
为了小空间中的更高密度和扩展的电功能,多个半导体管芯和IPD可以集成到系统级封装(SIP)模块或其他电子器件组件中。在SIP模块内,半导体管芯和IPD被安装到用于结构支撑和电互连的衬底。封装剂沉积在半导体管芯、IPD和衬底上。通常在封装剂上形成屏蔽层,以隔离或阻挡敏感电路免受EMI、RFI、谐波失真或其他器件间干扰。
电子器件和模块可能产生或易经受高频和低频干扰。高频干扰通常高于1.0千兆赫(GHz),而低频干扰低于1.0GHz。低频干扰可能由从各种源发射的磁场以及由以高频操作的SiP或高密度电路辐射的电磁噪声干扰产生,所述源例如Qi-WPC兼容器件、近场通信(NFC)器件、射频标识(RFID)器件、电力事务联盟(PMA)兼容器件、无线电力联盟(A4WP)兼容器件、无线充电技术(WCT)器件、开关电源、电感器模块和磁性随机存取存储器(RAM)。高频屏蔽可以用导电材料涂层(例如银(Ag)或铜(Cu))制成。然而,大多数屏蔽材料对于特别地来自低频磁场的低频干扰而言是无效的。
附图说明
图1a-1c示出具有由切道分离的多个半导体管芯的半导体晶片;
图2a-2f示出在SIP模块上形成多层屏蔽结构的过程;
图3a-3g示出多层屏蔽结构的各种逐层实施例;
图4示出多层屏蔽结构的一般化的逐层实施例;以及
图5示出具有安装到PCB表面的不同类型的封装的印刷电路板(PCB)。
附图说明
在以下描述中,参考附图在一个或多个实施例中描述本发明,在所述附图中,相同的数字表示相同或类似的要素。虽然根据用于实现本发明目的的最佳模式描述本发明,但是本领域技术人员将会理解,本发明旨在覆盖可以包括在由所附权利要求以及由以下公开和附图支持的它们的等同物限定的本发明的精神和范围内的替代、修改和等同物。本文中所使用的术语“半导体管芯”指代单数形式和复数形式的词语两者,且因此可以指代单个半导体器件和多个半导体器件两者。
半导体器件通常使用两种复杂的制造工艺来制造:前端制造和后端制造。前端制造涉及在半导体晶片的表面上形成多个管芯。晶片上的每个管芯包含被电连接以形成功能电路的有源和无源电元器件。有源电元器件,例如晶体管和二极管,具有控制电流流动的能力。无源电元器件,例如电容器、电感器和电阻器,产生为执行电路功能所需的电压和电流之间的关系。
后端制造指代将完成的晶片切割或单片化成个别半导体管芯并封装该半导体管芯以用于结构支撑、电互连和环境隔离。为了单片化半导体管芯,晶片沿着晶片的称为切道或划线的非功能区域被刻划和断开。使用激光切割工具或锯条将晶片单片化。在单片化之后,将个别半导体管芯安装到封装衬底,所述封装衬底包括用于与其他系统元器件互连的引脚或接触焊盘。然后将形成在半导体管芯上的接触焊盘连接到封装内的接触焊盘。可以用导电层、凸块、柱形凸块、导电膏或引线接合(wirebond)来进行电连接。可以将封装剂或其他模制材料沉积在封装上以提供物理支撑和电隔离。然后将完成的封装插入到电系统中,并且使半导体器件的功能可用于其他系统元器件。
图1a示出具有基底衬底材料102的半导体晶片100,所述基底衬底材料102例如硅、锗、磷化铝、砷化铝、砷化镓、氮化镓、磷化铟、碳化硅或用于结构支撑的其他块体材料。多个半导体管芯或元器件104形成在晶片100上,由无源、管芯间晶片区域或切道106分离。切道106提供切割区域以将半导体晶片100单片化成个别半导体管芯104。在一个实施例中,半导体晶片100具有100-450毫米(mm)的宽度或直径。
图1b示出半导体晶片100的一部分的截面图。每个半导体管芯104都具有背或无源表面108和有源表面110,所述有源表面110包含模拟或数字电路,所述模拟或数字电路被实现为根据管芯的电设计和功能而形成在管芯内且电互连的有源器件、无源器件、导电层和电介质层。例如,电路可以包括:一个或多个晶体管、二极管和其他电路元件,形成在有源表面110内以实现模拟电路或数字电路,例如数字信号处理器(DSP)、专用集成电路(ASIC)、存储器或其他信号处理电路。半导体管芯104也可以包含用于RF信号处理的IPD,例如电感器、电容器和电阻器。
使用PVD、CVD、电解电镀、化学电镀工艺或其他合适的金属沉积工艺在有源表面110上形成导电层112。导电层112可以是一层或多层铝(Al)、Cu、锡(Sn)、镍(Ni)、金(Au)、Ag或其他合适的导电材料。导电层112作为电连接到有源表面110上的电路的接触焊盘而操作。
使用蒸发、电解电镀、化学电镀、球滴或丝网印刷工艺在导电层112上沉积导电凸块材料。凸块材料可以是具有可选助焊剂溶液的Al、Sn、Ni、Au、Ag、Pb、Bi、Cu、焊料及其组合。例如,凸块材料可以是共晶Sn/Pb、高铅焊料或无铅焊料。可以使用合适的附着或接合工艺将凸块材料接合到导电层112。在一个实施例中,通过将凸块材料加热到其熔点以上来使该材料回流以形成球或凸块114。在一个实施例中,凸块114形成在具有润湿层、阻挡层和粘合层的凸块下金属化(UBM)上。凸块114也可以被压缩接合或热压接合到导电层112。凸块114表示一种类型的可以在导电层112上形成的互连结构。互连结构也可以使用接合线、导电膏、柱形凸块、微凸块或其他电互连。
在图1c中,使用锯条或激光切割工具118通过切道106将半导体晶片100单片化成个别半导体管芯104。个别半导体管芯104可以被检查和电测试,以标识单片化后的KGD。
图2a-2f示出在SIP模块上形成有效抵抗低频干扰的多层屏蔽结构的过程。图2a示出包括导电层122和绝缘层124的互连衬底120的截面图。导电层122可以是一层或多层Al、Cu、Sn、Ni、Au、Ag或其他合适的导电材料。导电层122提供横跨衬底120的水平电互连和在衬底120的顶表面126和底表面128之间的垂直电互连。导电层122的部分可以是电共用的或电隔离的,这取决于半导体管芯104和其他电元器件的设计和功能。绝缘层124包含一层或多层二氧化硅(SiO2)、氮化硅(Si3N4)、氮氧化硅(SiON)、五氧化二钽(Ta2O5)、氧化铝(Al2O3)、阻焊剂、聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)和具有类似绝缘和结构性质的其他材料。绝缘层124提供导电层122之间的隔离。
在图2b中,多个电元器件130a-130e被安装到互连衬底120的表面126,并且电和机械连接到导电层122。使用拾取和放置操作将每个电元器件130a-130e定位在衬底120上。例如,电元器件130a可以是:来自图1c的半导体管芯104,具有朝向衬底120的表面126取向并电连接到导电层122的有源表面110和凸块114。电元器件130a-130e可以包括其他半导体管芯、半导体封装、表面安装器件、分立电器件、分立晶体管、二极管或IPD,例如电阻器、电感器或电容器。
导电柱或柱状物134形成在互连衬底120上并电连接到导电层122。导电柱134可以用于垂直电互连。替代地,多个导电柱134或导电壁134在电元器件130a-103b与电元器件130c-130e之间提供电磁屏蔽。图2c示出与互连衬底120的导电层122进行机械和电连接的电元器件130a-130e和导电柱134。
在图2d中,使用膏印刷、压缩模制、转移模制、液体封装剂模制、真空层压、旋涂或其他合适的施加器将封装剂或模制化合物138沉积在电元器件130a-103e、导电柱134和衬底120上。封装剂138可以是聚合物复合材料,例如具有填充物的环氧树脂、具有填充物的环氧丙烯酸酯、或具有适当填充物的聚合物。封装剂138是不导电的,提供结构支撑,并且在环境上保护半导体器件免受外部要素和污染物。
在图2e中,可以通过研磨机140去除封装剂138的一部分,以暴露封装剂的表面142和导电柱134的表面144。研磨机140使封装剂138的表面142和导电柱134的表面144平坦化。安装到互连衬底120的导电层122的电元器件130a-130e和导电柱134构成SIP模块或半导体元器件组件148。
SIP模块148中的电元器件130a-130e可以包含IPD,所述IPD易经受或产生EMI、RFI、谐波失真和器件间干扰(统称为“干扰”)。例如,包含在电元器件130a-130e内的IPD提供针对高频应用所需要的电特性,例如谐振器、高通滤波器、低通滤波器、带通滤波器、对称Hi-Q(高品质因数)谐振变压器和调谐电容器。在另一个实施例中,电元器件130a-130e包含以高频开关的数字电路,这可能干扰SIP模块148中的IPD的操作。电元器件130a-130e可以从低频磁场产生低频干扰。
在图2f中,电磁屏蔽或屏蔽结构150形成或设置在封装剂138的顶表面142和导电柱134的表面144上。电磁屏蔽150还覆盖封装剂138的侧表面154和互连衬底120的侧表面156以及互连衬底的表面128的至少一部分。电磁屏蔽150是:多层屏蔽结构,覆盖SIP模块148(包括封装剂138的顶表面142和侧表面154),与导电柱134电接触,并且还覆盖互连衬底120的侧表面156和互连衬底的底表面128的至少一部分。电磁屏蔽结构150的层是保护层、软铁磁(FM)层和高导电性、低电阻率(σ)金属的组合。保护层可以是不锈钢或钢使用不锈钢(SUS)、钽(Ta)、钼(Mo)、钛(Ti)、Ni和铬(Cr)。保护层提供保护免受要素以及提供粘合特性。保护层可以作为保护、粘合或覆盖层引入在图3a-3c和3f中描述的各种屏蔽结构中。
软FM层用具有高磁导率的材料制成。软FM层可以是铁(Fe)、Ni、镍铁(NiFe)合金、铁硅(FeSi)合金、硅钢(Fe和碳)、镍铁钼(NiFeMo)合金、镍铁钼铜(NiFeMoCu)合金、铁硅铝(FeSiAl)合金、镍锌(NiZn)、锰锌(MnZn)、其他铁氧体、非晶磁性合金、非晶金属合金和纳米晶合金。软FM层还可以是Fe或钴(Co)与以下中的至少一种组合:Ni、Cu、Mo、Mn、Si、Zn、Al、Cr、硼(B)、铌(Nb)、磷(P)、锆(Zr)及其组合。在一个实施例中,软FM材料是72-82 wt.%(重量百分比)的Ni和12-20 wt.%的Fe。软FM层可以是如上所述的单个、均质、均匀的金属或材料成分。高σ金属可以是Ag、Cu、Au和Al。
另一种类型的层可以是层压的间隔物结构,即具有一种或多种材料的多个层,所述材料包括Ta、Mo、Ti、Cr、Cu、Al、Au、Ag、SiO2、Al2O3、Si3N4、AlN和基于氧化物的半导体或绝缘体。该间隔物可以在软FM层层压之前或之后层压。层压的间隔物防止由垂直各向异性引起的面外磁化,从而抑制涡流效应。可以通过溅射、喷涂或湿法电镀来将层压的间隔体形成为1.0纳米(nm)至1.0微米(μm)的厚度。
软FM层或高σ金属可以使用PVD、喷涂和湿法电镀来沉积或涂覆。每层的厚度范围从1.0nm到1.0μm。任何数量的材料层可以用于电磁屏蔽150。软FM层可以在平行于膜平面施加的均匀对准磁场中或者在施加到衬底以诱发单轴磁各向异性并减少残余应力的RF或直流(DC)偏置下进行沉积。这些层和材料的各种组合都在本发明的精神和范围内。
图3a示出在由图2f中的虚线160所指示的区域中多层电磁屏蔽150的一部分的第一实施例。在该第一实施例中,电磁屏蔽结构150具有三层:形成在表面142、144、154、156和128上并与之接触的第一层162,形成在层162上并与之接触的第二层164,以及形成在层164上并与之接触的第三层166。层162可以是保护层,层164可以是软FM层,而层166可以是保护层。在SIP模块148中,电磁屏蔽150的这三个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3b示出在由虚线160所指示的区域中多层电磁屏蔽150的一部分的第二实施例。在该第二实施例中,电磁屏蔽结构150具有四层:形成在表面142、144、154、156和128上并与之接触的第一层170,形成在层170上并与之接触的第二层172,形成在层172上并与之接触的第三层174,以及形成在层174上并与之接触的第四层176。层170可以是保护层,层172可以是软FM层,层174可以是高σ金属,而层176可以是保护层。在SIP模块148中,电磁屏蔽结构150的这四个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3c示出在由虚线160所指示的区域中多层电磁屏蔽150的一部分的第三实施例。在该第三实施例中,电磁屏蔽结构150具有四层:形成在表面142、144、154、156和128上并与之接触的第一层180,形成在层180上并与之接触的第二层182,形成在层182上并与之接触的第三层184,以及形成在层184上并与之接触的第四层186。层180可以是保护层,层182可以是高σ金属,层184可以是软FM层,而层186可以是保护层。在SIP模块148中,电磁屏蔽结构150的这四个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3d示出在由虚线160所指示的区域中多层电磁屏蔽150的一部分的第四实施例。在该第四实施例中,电磁屏蔽结构150具有三层:形成在表面142、144、154、156和128上并与之接触的第一层190,形成在层190上并与之接触的第二层192,以及形成在层192上并与之接触的第三层194。层190可以是软FM层,层192可以是高σ金属,而层194可以是软FM层。在SIP模块148中,电磁屏蔽结构150的这三个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3e示出在由虚线160所指示的区域中多层电磁屏蔽150的一部分的第五实施例。在该第五实施例中,电磁屏蔽结构150具有五层:形成在表面142、144、154、156和128上并与之接触的第一层200,形成在层200上并与之接触的第二层202,形成在层202上并与之接触的第三层204,形成在层204上并与之接触的第四层206,以及形成在层206上并与之接触的第五层208。层200可以是软FM层,层202可以是高σ金属,层204可以是软FM层,层206可以是高σ金属,而层208可以是软FM层。在SIP模块148中,电磁屏蔽结构150的这五个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3f示出在由虚线160所指示的区域中多层电磁屏蔽150的一部分的第六实施例。在该第六实施例中,电磁屏蔽结构150具有五层:形成在表面142、144、154、156和128上并与之接触的第一层210,形成在层210上并与之接触的第二层212,形成在层212上并与之接触的第三层214,形成在层214上并与之接触的第四层216,以及形成在层206上并与之接触的第五层218。层210可以是保护层,层212可以是高σ金属,层214可以是软FM层,层216可以是高σ金属,而层218可以是保护层。在SIP模块148中,电磁屏蔽结构150的这五个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图3g示出在由图2f中的虚线160所指示的区域中多层电磁屏蔽150的一部分的第七实施例。在该第七实施例中,电磁屏蔽结构150具有三层:形成在表面142、144、154、156和128上并与之接触的第一层220,形成在层220上并与之接触的第二层222,以及形成在层222上并与之接触的第三层224。层220可以是软FM层,层222可以是层压的间隔物,而层224可以是软FM层。在SIP模块148中,电磁屏蔽150的这三个标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
图4示出在由虚线160所指示的区域中一般化的多层电磁屏蔽150。在一般化的实施例中,电磁屏蔽结构150具有多个层:形成在表面142、144、154、156和128上并与之接触的第一层230,形成在层230上并与之接触的第二层232,形成在层232上并与之接触的第三层234,形成在层234上并与之接触的第四层236,以及形成在层236上并与之接触的第五层238。层230可以是保护层、单个软FM层或高σ金属。层232可以是单个软FM层、层压的间隔物层或高σ金属。层234可以是单个软FM层、层压的间隔物层或高σ金属。层236可以是单个软FM层、层压的间隔物层或高σ金属。层238可以是保护层、单个软FM层或高σ金属。实际上,任何数量的材料层可以用于电磁屏蔽150。在SIP模块148中,电磁屏蔽结构150的这些上面标识的层每个都设置在表面142、144、154和156的全部以及表面128的至少一部分上。
SIP模块或半导体元器件组件148包含由封装剂138和多层电磁屏蔽结构150覆盖的电元器件130a-130e。SIP模块或半导体元器件组件148可以用于移动通信、汽车、消费电子产品、wifi、蓝牙、触摸屏控制器、扬声器放大器、功率控制、闪速存储器、传感器、微机电系统(MEMS)、Qi-WPC兼容器件、NFC器件、RFID器件、PMA兼容器件、A4WP兼容器件、WCT器件、开关电源、电感器模块和磁性RAM,以及由以高频率操作的SIP或高密度电路辐射的电磁噪声干扰。这些器件和应用中的每个都可能产生或易经受高频和低频干扰。高频干扰通常高于1.0GHz,而低频干扰低于1.0GHz。多层电磁屏蔽结构150有效用于隔离或阻挡来自低频磁场的低频干扰以及高频干扰。特别地,如上所述,保护层、软FM层和高σ金属的各种多层组合通过使磁场重定向经过屏蔽材料并远离受保护器件来保护敏感器件免受由低频磁场引起的低频干扰。保护层、软FM层和高σ金属的各种多层组合也保护敏感器件免受高频干扰。
图5示出具有芯片载体衬底或PCB 302的电子器件300,其中,多个半导体封装安装在PCB 302的表面上,包括SIP模块148。电子器件300可以具有一种类型的半导体封装,或者多种类型的半导体封装,这取决于应用。
电子器件300可以是使用半导体封装来执行一个或多个电功能的独立系统。替代地,电子器件300可以是较大系统的子元器件。例如,电子器件300可以是平板电脑、蜂窝电话、数码相机、通信系统或其他电子器件的一部分。替代地,电子器件300可以是图形卡、网络接口卡或其他可以插入到计算机中的信号处理卡。半导体封装可以包括微处理器、存储器、ASIC、逻辑电路、模拟电路、RF电路、分立器件或其他半导体管芯或电元器件。小型化和重量减轻对于产品被市场接受而言是必要的。可以减小半导体器件之间的距离以实现更高的密度。
在图5中,PCB 302提供用于安装在PCB上的半导体封装的结构支撑和电互连的通用衬底。使用蒸发、电解电镀、化学电镀、丝网印刷或其他合适的金属沉积工艺在PCB 302的表面上或在PCB 302的层内形成导电信号迹线304。信号迹线304提供半导体封装、安装的元器件和其他外部系统元器件中的每个之间的电通信。迹线304还向半导体封装中的每个提供电源和地连接。
在一些实施例中,半导体器件具有两个封装级。第一级封装是一种用于将半导体管芯机械和电附着到中间衬底的技术。第二级封装涉及将中间衬底机械和电附着到PCB。在其他实施例中,半导体器件可以仅具有第一级封装,其中,管芯被直接机械和电安装到PCB。为了说明的目的,在PCB 302上示出几种类型的第一级封装,包括接合线封装306和倒装芯片308。另外,几种类型的第二级封装,包括球栅阵列(BGA)310、凸块芯片载体(BCC)312、接点栅格阵列(LGA)316、多芯片模块(MCM)或SIP模块318、四方扁平无引线封装(QFN)320、四方扁平封装322、嵌入式晶片级球栅阵列(eWLB)324和晶片级芯片尺寸封装(WLCSP)326被示出为安装在PCB 302上。在一个实施例中,eWLB 324是扇出晶片级封装(Fo-WLP),并且WLCSP326是扇入晶片级封装(Fi-WLP)。根据系统要求,配置有第一和第二级封装样式的任何组合的半导体封装的任何组合以及其他电子元器件可以连接到PCB 302。在一些实施例中,电子器件300包括单个附着的半导体封装,而其他实施例要求多个互连的封装。通过在单个衬底上组合一个或多个半导体封装,制造商可以将预制的元器件并入到电子器件和系统中。由于半导体封装包括复杂的功能,所以可以使用不太贵的元器件和流水线制造工艺来制造电子器件。所得到的器件不太可能失效,并且制造不太贵,从而导致消费者的较低成本。
虽然已经详细地示出本发明的一个或多个实施例,但是本领域技术人员将会理解,在不偏离所附权利要求中阐述的本发明的范围的情况下可以做出对那些实施例的修改和适配。
Claims (15)
1.一种制造半导体器件的方法,包括:
提供衬底;
在所述衬底上设置电元器件;
在所述衬底和所述电元器件上沉积封装剂;以及
在所述封装剂上形成多层屏蔽结构,其中,所述多层屏蔽结构包括铁磁材料的第一层和保护层或导电层的第二层。
2.根据权利要求1所述的方法,其中,所述保护层选自由不锈钢、钽、钼、钛、镍和铬组成的组。
3.根据权利要求1所述的方法,其中,所述导电层选自由铜、银、金和铝组成的组。
4.根据权利要求1所述的方法,其中,所述铁磁材料选自由铁、镍、镍铁合金、铁硅合金、硅钢、镍铁钼合金、镍铁钼铜合金、铁硅铝合金、镍锌、锰锌、其他铁氧体、非晶磁性合金、非晶金属合金和纳米晶合金组成的组。
5.一种半导体器件,包括:
衬底;
设置在所述衬底上的电元器件;
设置在所述衬底和所述电元器件上的封装剂;以及
形成在所述封装剂上的多层屏蔽结构,其中,所述多层屏蔽结构包括铁磁材料的第一层和保护层或导电层的第二层。
6.根据权利要求5所述的半导体器件,其中,所述保护层选自由不锈钢、钽、钼、钛、镍和铬组成的组。
7.根据权利要求5所述的半导体器件,其中,所述导电层选自由铜、银、金和铝组成的组。
8.根据权利要求5所述的半导体器件,其中,所述铁磁材料选自由铁、镍、镍铁合金、铁硅合金、硅钢、镍铁钼合金、镍铁钼铜合金、铁硅铝合金、镍锌、锰锌、其他铁氧体、非晶磁性合金、非晶金属合金和纳米晶合金组成的组。
9.根据权利要求5所述的半导体器件,其中,所述铁磁材料包括铁或钴与选自由以下组成的组的材料组合:镍、铜、钼、锰、硅、锌、铬、铝、硼、铌、磷和锆。
10. 一种半导体器件,包括:
电元器件组件;以及
形成在所述电元器件组件上的多层屏蔽结构,其中,所述多层屏蔽结构包括铁磁材料的第一层和保护层或导电层的第二层。
11.根据权利要求10所述的半导体器件,其中,所述保护层选自由不锈钢、钽、钼、钛、镍和铬组成的组。
12.根据权利要求10所述的半导体器件,其中,所述导电层选自由铜、银、金和铝组成的组。
13.根据权利要求10所述的半导体器件,其中,所述铁磁材料选自由铁、镍、镍铁合金、铁硅合金、硅钢、镍铁钼合金、镍铁钼铜合金、铁硅铝合金、镍锌、锰锌、其他铁氧体、非晶磁性合金、非晶金属合金和纳米晶合金组成的组。
14.根据权利要求10所述的半导体器件,其中,所述铁磁材料包括铁或钴与选自由以下组成的组的材料组合:镍、铜、钼、锰、硅、锌、铬、铝、硼、铌、磷和锆。
15.根据权利要求10所述的半导体器件,其中,所述第一层或所述第二层包括多个层压材料。
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