CN115323492A - Device and method for preparing single crystal copper wire at low cost - Google Patents
Device and method for preparing single crystal copper wire at low cost Download PDFInfo
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- CN115323492A CN115323492A CN202211141963.4A CN202211141963A CN115323492A CN 115323492 A CN115323492 A CN 115323492A CN 202211141963 A CN202211141963 A CN 202211141963A CN 115323492 A CN115323492 A CN 115323492A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
Abstract
The invention provides a device and a method for preparing a single crystal copper wire at low cost, wherein the device comprises a feeding mechanism, a single crystal copper growth mechanism, a cooling mechanism and a material receiving mechanism; the feeding mechanism is used for straightening and conveying the common copper wire connected with the seed crystal into the single crystal copper growth mechanism; the single crystal copper growth mechanism comprises a single-turn coil, a heat insulation baffle and a heat-resistant protective sleeve, a copper wire passes through the heat-resistant protective sleeve, a seed crystal is placed in the center of the single-turn coil in an initial state, the heating function of the single-turn coil is started, a molten pool can be formed at the center of the copper wire passing through the single-turn coil, light and heat radiated by the molten pool are isolated on one side of the molten pool by the heat insulation baffle, and the single crystal copper grows forwards stably at the molten pool; the cooling mechanism is used for forming a high temperature gradient between the cooling mechanism and the molten pool; the material receiving mechanism is used for polishing and rolling the single crystal copper wire. The invention provides a device and a method for greatly reducing the energy consumption in the production process and improving the wire drawing success rate of a single crystal copper wire without using a crucible and a graphite casting mold.
Description
Technical Field
The invention belongs to the technical field of single crystal copper wire preparation, and particularly relates to a device and a method for preparing a single crystal copper wire at low cost.
Background
The single crystal metal wire eliminates the crystal boundary defect of the metal crystal, greatly improves the elongation, conductivity and signal transmission performance of the wire, and has wide application prospect technically. Particularly, the resistivity of the single crystal copper wire is lower than that of the common copper wire by more than 30 percent, and if the single crystal copper wire is applied to the fields of high-speed motors, generators, transformers and the like, the energy-saving effect is great, and the carbon emission is greatly reduced. At present, carbon emission in the power industry of China accounts for 41% of total emission, the average operation efficiency of a main series motor is only 87.6%, if single crystal copper wires are adopted as coil materials, the motor efficiency is improved to 90%, about 1 hundred million tons of carbon dioxide emission can be reduced every year, and the energy-saving and emission-reducing effects are very obvious.
However, the cost of the single crystal copper wire prepared by the traditional preparation method is more than 10 times that of the common copper wire, and the method is a main reason for limiting the large-scale application of the single crystal copper wire. The traditional single crystal copper wire is cast into a single crystal copper rod with the diameter of 6-8 mm by adopting a single crystal continuous casting technology, and then the single crystal copper wire with the diameter of 0.25-2 mm is prepared by the working procedures of multi-pass drawing, annealing and the like. According to the method, a large crucible is adopted to melt dozens of kilograms to hundreds of kilograms of copper, a large amount of electric energy is consumed to maintain the temperature of molten metal in the crucible in the preparation process of a single crystal copper rod for tens of hours, meanwhile, a large amount of energy and labor cost are still consumed in the multi-pass drawing and annealing processes, and the single crystal copper rod is easy to recrystallize in the subsequent heat treatment process due to the fact that a large amount of crystal defects such as dislocation and the like are accumulated in crystals in the drawing process, so that the single crystal copper is changed into a common polycrystalline copper wire, the yield of the single crystal copper wire is extremely low, and the cost of the single crystal copper wire is extremely high.
In order to solve the problems, in the prior art, a small crucible is used for melting 20 to 30ml of copper liquid to continuously draw a single crystal copper wire, so that an infinite length of the single crystal copper wire can be theoretically realized, and the problems of high energy consumption and recrystallization caused by subsequent drawing are partially solved. However, when drawing an ultra-fine wire, the molten metal cannot flow smoothly into the graphite mold due to the influence of the surface tension of the molten metal, and the molten metal flows toward the graphite mold due to the pressure generated in the crucible by the action of the wire feeding system, which requires strict matching of the speeds of the wire feeding system and the wire drawing system, and high sealing performance between the copper wire fed to the crucible and the crucible, between the crucible and the graphite mold, between the graphite mold and the cold finger, which is slightly worn or mismatched with the wire feeding speed, may cause the molten metal to splash, thereby causing the failure of wire drawing of the single crystal copper wire, interruption of production, and high time cost caused by maintenance and interruption of production. In some schemes, a slightly larger crucible is adopted, a casting mold opening is arranged at the bottom of the crucible, molten metal fills the casting mold through gravity in a liquid level height difference mode, although the problems of wire feeding speed mismatching and splashing can be solved, the molten metal in the crucible is too little, the liquid level height is too low, when the superfine monocrystalline copper wire is drawn, a gravity pressure head generated by the liquid level height of the molten metal cannot sufficiently offset the surface tension between the casting mold and the molten metal, the molten metal flows to the casting mold very difficultly, the wire drawing process is still very difficult, and the failure rate is very high. The other existing solution is to heat a graphite casting mold through an induction coil, heat the molten metal through the graphite casting mold, because the casting mold is large, the casting mold dissipates a large amount of heat outwards through heat radiation in a high-temperature state, the energy utilization rate is not high, the cost is high, although the problem that the molten metal flows smoothly to the casting mold is solved, the molten metal returns to the traditional single crystal pulling method adopting a large crucible to preserve heat for a large amount of metal, the energy consumption is very high, and the cost is difficult to control.
Disclosure of Invention
Aiming at the problems, the invention provides the device and the method for preparing the single crystal copper wire, which do not need to use a crucible and a graphite casting mold, greatly reduce the energy consumption in the production process and improve the wire drawing success rate of the single crystal copper wire, particularly the phi 0.1-phi 2mm fine wires and superfine wires, and can greatly reduce the production cost of the single crystal copper wire.
The invention is realized by the following technical scheme:
the invention provides a device for preparing a single crystal copper wire at low cost, which comprises a feeding mechanism, a single crystal copper growth mechanism, a cooling mechanism and a material receiving mechanism;
the feeding mechanism is used for straightening and conveying a common copper wire connected with seed crystals into the single crystal copper growth mechanism, and the seed crystals are a section of single crystal copper wire;
the single crystal copper growth mechanism comprises a single-turn coil, a heat insulation baffle and a heat-resistant protective sleeve, the heat insulation baffle is arranged on one side, close to the cooling mechanism, of the single crystal copper growth mechanism, a first through hole is formed in the heat insulation baffle, a closed cavity is formed in the heat-resistant protective sleeve, the copper wire sequentially passes through the cavity and the first through hole, the seed crystal is arranged at the center of the single-turn coil in an initial state, the heating function of the single-turn coil is started, a molten pool with the size being equivalent to the diameter of the copper wire can be formed at the center of the copper wire passing through the single-turn coil, light and heat radiated by the molten pool are isolated on one side of the molten pool by the heat insulation baffle (influence on temperature gradient is avoided), and the single crystal copper grows forward stably at the molten pool;
the cooling mechanism is used for forming a high temperature gradient between the cooling mechanism and the molten pool and cooling the single crystal copper wire;
the material receiving mechanism is used for polishing and rolling the cooled single crystal copper wire.
As a further explanation of the invention, an inflation tube is arranged on the heat-resistant protective sleeve and used for filling inert protective gas into the cavity.
As a further explanation of the invention, the single crystal copper growth mechanism further comprises an infrared thermometer, the infrared thermometer is used for measuring the temperature of the molten pool, and the temperature of the molten pool is controlled within 1190-1350 ℃.
As a further illustration of the invention, the heat-resistant protective sleeve comprises a quartz protective tube and an end cover;
the end cover and the heat insulation baffle are respectively connected to two ends of the quartz protection tube, so that the closed cavity is formed; the single-turn coil is tightly attached to the heat insulation baffle, and the end cover is further provided with a first through hole for the copper wire to pass through.
As a further explanation of the invention, the feeding mechanism comprises a pay-off device and a feeding guide wheel;
the pay-off device is used for winding copper wires connected with seed crystals, and the feeding guide wheel is used for straightening and conveying the copper wires output by the pay-off device into the single crystal copper growth mechanism.
As a further explanation of the invention, the cooling mechanism comprises a cooling water pipe into which cooling water is introduced, a group of second through holes are formed along the radial direction of the cooling water pipe, and the single crystal copper wire is output through the second through holes along the radial direction of the cooling water pipe;
the flow rate of the cooling water introduced into the cooling water pipe is controlled to be 300 to 1000mL/min, and the temperature of the cooling water is controlled to be 20 to 30 ℃.
As a further explanation of the invention, the receiving mechanism comprises a take-up device, a polishing wheel set and a traction guide wheel;
the traction guide wheel is used for drawing out the cooled single crystal copper wire; the polishing wheel set is used for polishing and reducing the diameter of the pulled single crystal copper wire; the take-up device is used for rolling the polished single crystal copper wire.
The second aspect of the present invention provides a method for preparing a single crystal copper wire at low cost, the method is implemented by using the above apparatus for preparing a single crystal copper wire at low cost, and comprises:
connecting a section of single crystal copper wire as a seed crystal at the end of a common copper wire, and then connecting a section of common copper wire as a traction section at the other end of the single crystal copper wire;
the copper wire connected with the seed crystal and the traction section sequentially passes through a feeding mechanism, a single crystal copper growth mechanism, a cooling mechanism and a receiving mechanism, so that the single crystal copper wire used as the seed crystal is placed in the center of the single-turn coil;
starting a cooling mechanism for cooling, then starting a single-turn coil to heat a copper wire, and controlling the temperature of a molten pool within 1190 to 1350 ℃;
and starting the feeding mechanism and the receiving mechanism to grow and draw the single crystal copper wire.
As a further illustration of the invention, before starting the single-turn coil to heat the copper wire, the method further comprises the following steps:
and introducing inert protective gas into the cavity of the heat-resistant protective sleeve to form micro-positive pressure in the heat-resistant protective sleeve.
And after the drawing of a roll of copper wire is finished, firstly closing the feeding mechanism and the receiving mechanism, then closing the heating function of the single-turn coil, and finally closing the introduction of inert gas and closing the cooling mechanism to obtain the whole roll of the single crystal copper wire.
Compared with the prior art, the invention has the following beneficial technical effects:
according to the invention, a crucible and a graphite casting mould of the traditional single crystal continuous casting equipment are removed, a large amount of electric energy is saved, the heat insulation baffle is arranged between the molten pool and the cooling water pipe, the influence on the temperature gradient is avoided, the wire drawing yield of the single crystal copper wire is greatly improved, the single crystal copper wire is manufactured on the basis of the common copper wire, the cost is only 1.2-1.5 times that of the common copper wire, the cost can be used for popularizing the single crystal copper wire into national economic basic equipment such as a motor and a transformer, and important economic benefits and social benefits of energy conservation and emission reduction can be generated.
Drawings
FIG. 1 and FIG. 2 are schematic structural views of the device for preparing single crystal copper wires at low cost provided by the invention.
Reference numerals:
1-a copper wire;
100-a feeding mechanism, 2-a feeding guide wheel and 14-a pay-off device;
200-a single crystal copper growth mechanism, 201-a heat-resistant protective sleeve, 3-an end cover, 4-a quartz protective tube, 5-an inflation tube, 6-a molten pool, 7-a single-turn coil, 8-a heat insulation baffle, 11-an infrared thermometer and 16-a first through hole;
300-a cooling mechanism, 9-a cooling water pipe, 10-a rubber sealing ring and 17-a second through hole;
400-a material receiving mechanism, 12-a traction guide wheel, 13-a polishing wheel set and 15-a wire take-up device.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The technical solution of the present invention will be explained with reference to specific examples.
As shown in fig. 1 and 2, an apparatus for preparing a single crystal copper wire at low cost is provided, which includes a feeding mechanism 100, a single crystal copper growth mechanism 200, a cooling mechanism 300, and a receiving mechanism 400;
the feeding mechanism 100 is used for aligning and conveying a common copper wire connected with a seed crystal into the single crystal copper growth mechanism 200, wherein the seed crystal is a section of single crystal copper wire;
the single crystal copper growth mechanism 200 comprises a single-turn coil 7, a heat insulation baffle 8 and a heat-resistant protective sleeve 201, the heat insulation baffle 8 is arranged on one side, close to the cooling mechanism 300, of the single crystal copper growth mechanism 200, a first through hole 16 is formed in the heat insulation baffle 8, a closed cavity is formed in the heat-resistant protective sleeve 201, a copper wire sequentially passes through the cavity and the first through hole 16, the seed crystal is arranged at the center of the single-turn coil 7 in an initial state, the heating function of the single-turn coil 7 is started, a molten pool 6 with the size being equivalent to the diameter of the copper wire can be formed at the position, through the center of the single-turn coil 7, of the copper wire, light and heat radiated by the molten pool 6 are isolated on one side of the molten pool 6 by the heat insulation baffle 8, and the single crystal copper can grow forwards and stably at the molten pool 6;
the cooling mechanism 300 is used for forming a high temperature gradient between the cooling mechanism 300 and the molten pool 6 and cooling the single crystal copper wire;
the material receiving mechanism 400 is used for polishing and winding the cooled single crystal copper wire.
The invention removes a crucible and a graphite casting mold in the traditional preparation process of the single crystal copper wire, has no restriction of the graphite casting mold, uses the common process to draw, form and wind the coiled copper wire 1, and connects a section of the single crystal copper wire with the same diameter as a crystal leading section (seed crystal), uses the heating function of a single-turn coil 7, forms a molten pool 6 with the size equivalent to the diameter of the copper wire at the position where the copper wire passes through the single-turn coil 7, the molten pool 6 is tightly attached to the ends of the common copper wire and the single crystal copper wire under the action of the surface tension of copper liquid, under the action of a cooling mechanism 300 in the advancing direction of the copper wire 1, a heat insulation baffle 8 isolates light and heat radiated by the molten pool 6 at one side of the molten pool 6, the influence on the temperature gradient is avoided, a stable high temperature gradient is formed between the molten pool 6 and the cooling mechanism 300, the single crystal copper in the crystal leading section stably grows forwards at the molten pool 6 and continuously moves backwards under the action of a receiving mechanism 400, the feeding mechanism 100 continuously feeds the common copper wire to the molten pool 6 formed by the single crystal copper wire 7, the single crystal copper wire, the feeding speed is constant with the traction speed, and the drawing speed, and a stable drawing system of the single crystal copper fine copper wire is formed.
Furthermore, the single-turn coil 7 is externally connected with a medium-frequency power supply, so that the electrifying and heating functions of the single-turn coil 7 can be realized.
In one implementation, as shown in fig. 2, the feeding mechanism 100 includes a pay-off device 14 and a feeding guide wheel 2; the pay-off device 14 is used for winding a copper wire 1 connected with seed crystals, and the feeding guide wheel 2 is used for straightening and conveying the copper wire output by the pay-off device 14 into the single crystal copper growth mechanism 200.
In one implementation, as shown in fig. 2, the heat-resistant protective sheath 201 includes a quartz protective tube 4 and an end cap 3; the end cover 3 and the heat insulation baffle plate 8 are respectively connected to two ends of the quartz protection tube 4, so that the closed cavity is formed; the single-turn coil 7 is tightly attached to the heat insulation baffle plate 8, and a first through hole 16 for allowing the copper wire to pass through is formed in the end cover 3.
Wherein, the end cap 3 can be quartz glass or ceramic; the thermal barrier 8 is preferably made of a ceramic material, which insulates the light radiated from the molten bath 6 and heat on the side of the molten bath 6 without affecting the temperature gradient of the copper wire between the molten bath 6 and the cooling means 300, thereby forming a stable high temperature gradient between the molten bath 6 and the cooling means 300. The diameter of the first through hole 16 is 0.1-0.2mm larger than that of the copper wire 1, so that the grown single crystal copper wire can pass through smoothly without generating a large amount of light leakage phenomenon to influence the temperature gradient.
Further, an inflation tube 5 is arranged on the heat-resistant protective sleeve 201, and the inflation tube 5 is used for filling inert protective gas into the cavity; the protective gas protects the high-temperature molten pool 6, and the protective gas can be inert gas such as nitrogen, argon and the like.
The single crystal copper growth mechanism 200 further comprises an infrared thermometer 11, wherein the infrared thermometer 11 is used for measuring the temperature of the molten pool 6, so that the temperature of the molten pool 6 can be accurately controlled within 1190 to 1350 ℃.
In an implementation manner, as shown in fig. 2, the cooling mechanism 300 includes a cooling water pipe 9 into which cooling water is introduced, a set of second through holes 17 is formed along the radial direction of the cooling water pipe 9, and the single crystal copper wire is output along the radial direction of the cooling water pipe 9 through the second through holes 17. The cooling water pipe 9 can be made of a quartz pipe or a copper pipe, and the second through hole 17 is provided with a rubber sealing ring 10 for sealing to prevent cooling water from leaking.
In one implementation manner, as shown in fig. 2, the material receiving mechanism includes a wire take-up device 15, a polishing wheel set 13 and a traction guide wheel 12; the traction guide wheel 12 is used for drawing out the cooled single crystal copper wire; the polishing wheel set 13 is used for polishing and reducing the drawn single crystal copper wire; the take-up device 15 is used for rolling the polished single crystal copper wire.
Because the pulled monocrystalline copper wire may have bamboo-like fine size fluctuation, the rear end of the device is provided with the polishing wheel set 13, and the diameter of the pulled monocrystalline filament is reduced by about 0.01mm in the polishing wheel set 13, so that the monocrystalline copper wire with a bright surface and uniform diameter is formed. The copper particles ground by the polishing wheel are collected and recovered, so that the production cost of the single crystal copper wire can be further reduced. Furthermore, 2 to 4 groups of polishing wheel sets 13 can be set according to the size of the wire drawing diameter so as to improve the polishing efficiency and precision.
The invention also provides a method for preparing the single crystal copper wire at low cost, which is implemented by adopting the device for preparing the single crystal copper wire at low cost and comprises the following steps:
connecting a section of single crystal copper wire as seed crystal at the end of the common copper wire 1, and then connecting a section of common copper wire as a traction section at the other end of the single crystal copper wire;
copper wires connected with the seed crystals and the traction section sequentially pass through the feeding mechanism 100, the single crystal copper growth mechanism 200, the cooling mechanism 300 and the receiving mechanism 400, so that the single crystal copper wires serving as the seed crystals are placed in the center of the single-turn coil 7;
starting a cooling mechanism 300 for cooling, then starting a single-turn coil 7 to heat the copper wire, and controlling the temperature of a molten pool 6 to be 1190-1350 ℃;
and starting the feeding mechanism 100 and the receiving mechanism 300 to grow and draw the single crystal copper wire.
Further, before starting the single-turn coil 7 to heat the copper wire, the method further comprises the following steps: and introducing inert protective gas into the cavity of the heat-resistant protective sleeve 201 to form micro-positive pressure in the heat-resistant protective sleeve 201.
Furthermore, after a roll of copper wire is drawn, the feeding mechanism 100 and the receiving mechanism 400 are closed, the heating function of the single-turn coil 7 is closed, and finally the introduction of inert gas and the closing of the cooling mechanism 300 are closed, so that the whole roll of single crystal copper wire is obtained.
In an implementation mode, the method for preparing the single crystal copper wire with low cost comprises the following steps:
1. adopting a coiled common copper wire 1, firstly welding a section of single crystal copper wire of 5-15mm at the end as a seed crystal, and then welding a section of common copper wire at the other end of the single crystal copper wire as a traction section;
2. the method comprises the following steps of (1) winding a copper wire with a seed crystal and a traction section welded on into a pay-off device 14, wherein the copper wire at the traction section passes through a feeding guide wheel 2, a quartz protection tube 4, a single-turn coil 7, a heat insulation baffle 8, a cooling water tube 9, a traction guide wheel 12, a polishing wheel group 13 and a take-up device 15 in sequence, adjusting the pay-off device 14 and the take-up device 15, and placing a single crystal copper wire serving as the seed crystal at the center of the single-turn coil 7;
3. adjusting the distance between the heat insulation baffle 8 and the cooling water pipe 9, wherein the distance is controlled to be 4 to 20mm;
4. opening an argon valve, introducing protective inert protective gas into the quartz protection tube 4, forming micro positive pressure in the quartz protection tube 4, and opening a cooling water valve to control the flow of cooling water in the cooling water tube 9 to be 300-1000 mL/min and the temperature of the cooling water to be 20-30 ℃;
5. starting an intermediate frequency power supply, heating the copper wire, measuring the temperature of a molten pool 6 through an infrared thermometer 11, adjusting the power of the intermediate frequency power supply according to the drawing speed and the diameter of the copper wire, controlling the temperature of the molten pool 6 within 1190 to 1350 ℃, and controlling the power of the intermediate frequency power supply within 500 to 2000W if the diameter of the copper wire is within 0.1 to 2 mm;
6. starting the pay-off device 14, the feeding guide wheel 2, the traction guide wheel 12, the take-up device 15 and the polishing wheel set 13, and setting the wire drawing speed to be 100-2000 mm/min for growing and drawing the single crystal copper wire;
and when the drawing of a roll of the copper wire is finished, closing the pay-off device 14, the take-up device 15, the polishing wheel set 13, the feeding guide wheel 2 and the traction guide wheel 12, closing the intermediate frequency power supply of the single-turn coil 7, and finally closing the inert gas and the cooling water to obtain the whole roll of the single crystal copper wire.
Example 1
The device provided by the attached figure 2 is adopted to prepare the phi 0.1 mm single crystal copper superfine wire, and the method comprises the following steps:
1. adopting a coiled common copper wire 1, welding a section of 5mm single crystal copper wire as a seed crystal at the end, and welding a section of common copper wire as a traction section at the other end of the single crystal copper wire;
2. the method comprises the following steps of (1) winding a copper wire with a welded seed crystal and a traction section into a pay-off device 14, wherein the copper wire of the traction section passes through a feeding guide wheel 2, a quartz protection tube 4, a single-turn coil 7, a heat insulation baffle plate 8, a cooling water tube 9, a traction guide wheel 12, a polishing wheel set 13 and a take-up device 15 in sequence, adjusting the pay-off device 14 and the take-up device 15, and placing a single crystal copper wire serving as the seed crystal at the center of the single-turn coil 7;
3. adjusting the distance between the heat insulation baffle 8 and the cooling water pipe 9, wherein the distance is controlled to be 4mm;
4. opening an argon valve, introducing protective inert protective gas into the quartz protection tube 4, forming micro positive pressure in the quartz protection tube 4, and opening a cooling water valve to control the flow of cooling water in the cooling water tube 9 at 300mL/min and the temperature of the cooling water at 20 ℃;
5. starting an intermediate frequency power supply, heating the copper wire, measuring the temperature of the molten pool 6 through an infrared thermometer 11, adjusting the power of the intermediate frequency power supply according to the wire drawing speed and the diameter of the copper wire, controlling the temperature of the molten pool 6 to 1350 ℃ and controlling the power of the intermediate frequency power supply to be 500W;
6. starting the pay-off device 14, the feeding guide wheel 2, the traction guide wheel 12, the take-up device 15 and the polishing wheel set 13, and setting the wire drawing speed at 2000 mm/min to grow and draw the single crystal copper wire;
and when the drawing of a roll of the copper wire is finished, closing the pay-off device 14, the take-up device 15, the polishing wheel set 13, the feeding guide wheel 2 and the traction guide wheel 12, closing the intermediate frequency power supply of the single-turn coil 7, and finally closing the inert gas and the cooling water to obtain the whole roll of the single crystal copper wire.
The prepared copper wire is detected to have the elongation of 69 percent and the highest resistivity value of 1.63 multiplied by 10 -8 Ω∙m。
Example 2
The device provided by the attached figure 2 is adopted to prepare the phi 0.8 mm single crystal copper wire, and the method comprises the following steps:
1. adopting a coiled common copper wire 1, firstly welding a section of 10mm single crystal copper wire as a seed crystal at the end, and then welding a section of common copper wire as a traction section at the other end of the single crystal copper wire;
2. the method comprises the following steps of (1) winding a copper wire with a welded seed crystal and a traction section into a pay-off device 14, wherein the copper wire of the traction section passes through a feeding guide wheel 2, a quartz protection tube 4, a single-turn coil 7, a heat insulation baffle plate 8, a cooling water tube 9, a traction guide wheel 12, a polishing wheel set 13 and a take-up device 15 in sequence, adjusting the pay-off device 14 and the take-up device 15, and placing a single crystal copper wire serving as the seed crystal at the center of the single-turn coil 7;
3. adjusting the distance between the heat insulation baffle 8 and the cooling water pipe 9, wherein the distance is controlled to be 10mm;
4. opening an argon valve, introducing protective inert protective gas into the quartz protection tube 4, forming micro positive pressure in the quartz protection tube 4, and opening a cooling water valve to control the flow of cooling water in the cooling water tube 9 at 700mL/min and the temperature of the cooling water at 25 ℃;
5. starting an intermediate frequency power supply, heating the copper wire, measuring the temperature of the molten pool 6 through an infrared thermometer 11, adjusting the power of the intermediate frequency power supply according to the wire drawing speed and the diameter of the copper wire, controlling the temperature of the molten pool 6 at 1250 ℃, and controlling the power of the intermediate frequency power supply at 1000W;
6. starting the pay-off device 14, the feeding guide wheel 2, the traction guide wheel 12, the take-up device 15 and the polishing wheel set 13, and setting the wire drawing speed at 1000 mm/min for growing and drawing the single crystal copper wire;
and when the drawing of a roll of the copper wire is finished, closing the pay-off device 14, the take-up device 15, the polishing wheel set 13, the feeding guide wheel 2 and the traction guide wheel 12, closing the intermediate frequency power supply of the single-turn coil 7, and finally closing the inert gas and the cooling water to obtain the whole roll of the single crystal copper wire.
The prepared copper wire is detected to have the elongation of 68 percent and the highest resistivity value of 1.59 multiplied by 10 -8 Ω∙m。
Example 3
The device provided by the attached figure 2 is adopted to prepare the phi 2mm single crystal copper wire, and comprises the following steps:
1. adopting a coiled common copper wire 1, firstly welding a section of 15mm single crystal copper wire as seed crystal at the end, and then welding a section of common copper wire as a traction section at the other end of the single crystal copper wire;
2. the method comprises the following steps of (1) winding a copper wire with a welded seed crystal and a traction section into a pay-off device 14, wherein the copper wire of the traction section passes through a feeding guide wheel 2, a quartz protection tube 4, a single-turn coil 7, a heat insulation baffle plate 8, a cooling water tube 9, a traction guide wheel 12, a polishing wheel set 13 and a take-up device 15 in sequence, adjusting the pay-off device 14 and the take-up device 15, and placing a single crystal copper wire serving as the seed crystal at the center of the single-turn coil 7;
3. adjusting the distance between the heat insulation baffle 8 and the cooling water pipe 9, wherein the distance is controlled to be 20mm;
4. opening an argon valve, introducing protective inert protective gas into the quartz protection tube 4, forming micro positive pressure in the quartz protection tube 4, and opening a cooling water valve to control the flow of cooling water in the cooling water tube 9 to be 1000mL/min and the temperature of the cooling water to be 30 ℃;
5. starting a medium-frequency power supply, heating the copper wire, measuring the temperature of the molten pool 6 through an infrared thermometer 11, adjusting the power of the medium-frequency power supply according to the wire drawing speed and the diameter of the copper wire, controlling the temperature of the molten pool 6 at 1190 ℃, and controlling the power of the medium-frequency power supply at 2000W;
6. starting the pay-off device 14, the feeding guide wheel 2, the traction guide wheel 12, the take-up device 15 and the polishing wheel set 13, and setting the wire drawing speed at 100mm/min to grow and draw the single crystal copper wire;
and when the drawing of a roll of the copper wire is finished, closing the pay-off device 14, the take-up device 15, the polishing wheel set 13, the feeding guide wheel 2 and the traction guide wheel 12, closing the intermediate frequency power supply of the single-turn coil 7, and finally closing the inert gas and the cooling water to obtain the whole roll of the single crystal copper wire.
The prepared copper wire is detected to have the elongation rate of 73 percent and the highest resistivity value of 1.51 multiplied by 10 -8 Ω∙m。
The embodiments given above are preferable examples for implementing the present invention, and the present invention is not limited to the above-described embodiments. Any non-essential addition and replacement made by the technical characteristics of the technical scheme of the invention by a person skilled in the art belong to the protection scope of the invention.
Claims (9)
1. A device for preparing single crystal copper wires at low cost is characterized by comprising a feeding mechanism, a single crystal copper growing mechanism, a cooling mechanism and a receiving mechanism;
the feeding mechanism is used for straightening and conveying a common copper wire connected with seed crystals into the single crystal copper growth mechanism, and the seed crystals are a section of single crystal copper wire;
the single crystal copper growth mechanism comprises a single-turn coil, a heat insulation baffle and a heat-resistant protective sleeve, the heat insulation baffle is arranged on one side, close to the cooling mechanism, of the single crystal copper growth mechanism, a first through hole is formed in the heat insulation baffle, a closed cavity is formed in the heat-resistant protective sleeve, the copper wire sequentially passes through the cavity and the first through hole, the seed crystal is arranged at the center of the single-turn coil in an initial state, the heating function of the single-turn coil is started, a molten pool with the size being equivalent to the diameter of the copper wire can be formed at the center of the copper wire passing through the single-turn coil, light and heat radiated by the molten pool are isolated on one side of the molten pool by the heat insulation baffle, and the single crystal copper stably grows forwards at the molten pool;
the cooling mechanism is used for forming a high temperature gradient between the cooling mechanism and the molten pool and cooling the single crystal copper wire;
the material receiving mechanism is used for polishing and rolling the cooled single crystal copper wire.
2. The device for preparing the monocrystalline copper wire at low cost as claimed in claim 1, wherein an air inflation tube is arranged on the heat-resistant protective sleeve and used for filling inert protective gas into the cavity.
3. The device for preparing the single crystal copper wire at low cost according to claim 1, wherein the single crystal copper growth mechanism further comprises an infrared thermometer, the infrared thermometer is used for measuring the temperature of the molten pool, and the temperature of the molten pool is controlled within 1190-1350 ℃.
4. The apparatus for preparing the single crystal copper wire at low cost according to claim 1, wherein the heat-resistant protective sleeve comprises a quartz protective tube and an end cap;
the end cover and the heat insulation baffle are respectively connected to two ends of the quartz protection tube, so that the closed cavity is formed; the single-turn coil is tightly attached to the heat insulation baffle, and the end cover is further provided with a first through hole for the copper wire to pass through.
5. The device for preparing the monocrystalline copper wire at low cost as claimed in claim 1, wherein the feeding mechanism comprises a pay-off device and a feeding guide wheel;
the pay-off device is used for winding copper wires connected with seed crystals, and the feeding guide wheel is used for straightening and conveying the copper wires output by the pay-off device into the single crystal copper growth mechanism.
6. The device for preparing the single crystal copper wire at low cost according to claim 1, wherein the cooling mechanism comprises a cooling water pipe for introducing cooling water, a group of second through holes are formed along the radial direction of the cooling water pipe, and the single crystal copper wire is output along the radial direction of the cooling water pipe through the second through holes;
the flow rate of the cooling water introduced into the cooling water pipe is controlled to be 300-1000 mL/min, and the temperature of the cooling water is 20-30 ℃.
7. The device for preparing the monocrystalline copper wire at low cost as claimed in claim 1, wherein the material receiving mechanism comprises a wire collecting device, a polishing wheel set and a traction guide wheel;
the traction guide wheel is used for drawing out the cooled single crystal copper wire; the polishing wheel set is used for polishing and reducing the diameter of the pulled single crystal copper wire; the take-up device is used for rolling the polished single crystal copper wire.
8. A method for preparing a single crystal copper wire at low cost, which is implemented by using the apparatus for preparing a single crystal copper wire at low cost according to claim 1, comprising:
connecting a section of single crystal copper wire as seed crystal at the end of the common copper wire, and then connecting a section of common copper wire as a traction section at the other end of the single crystal copper wire;
the copper wire connected with the seed crystal and the traction section sequentially passes through a feeding mechanism, a single crystal copper growth mechanism, a cooling mechanism and a receiving mechanism, so that the single crystal copper wire used as the seed crystal is placed in the center of the single-turn coil;
starting a cooling mechanism for cooling, then starting a single-turn coil to heat the copper wire, and controlling the temperature of a molten pool to 1190-1350 ℃;
and starting the feeding mechanism and the receiving mechanism to grow and draw the single crystal copper wire.
9. The method for preparing the single-crystal copper wire at low cost according to claim 8, wherein before the single-turn coil is started to heat the copper wire, the method further comprises the following steps:
and introducing inert protective gas into the cavity of the heat-resistant protective sleeve to form micro-positive pressure in the heat-resistant protective sleeve.
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| CN1432442A (en) * | 2002-12-20 | 2003-07-30 | 西安工业学院 | Method and equipment to make metal wire become monocrystalline wire |
| WO2017081403A1 (en) * | 2015-11-13 | 2017-05-18 | Nimesis Technology | Method for producing monocrystalline copper alloys |
| CN109093088A (en) * | 2018-10-12 | 2018-12-28 | 兰州理工大学 | A kind of monocrystalline copper sheet preparation facilities and preparation method |
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| CN1432442A (en) * | 2002-12-20 | 2003-07-30 | 西安工业学院 | Method and equipment to make metal wire become monocrystalline wire |
| WO2017081403A1 (en) * | 2015-11-13 | 2017-05-18 | Nimesis Technology | Method for producing monocrystalline copper alloys |
| CN109093088A (en) * | 2018-10-12 | 2018-12-28 | 兰州理工大学 | A kind of monocrystalline copper sheet preparation facilities and preparation method |
| WO2020206611A1 (en) * | 2019-04-08 | 2020-10-15 | 东北大学 | METHOD FOR CONTINUOUS AND HIGH-EFFICIENT PREPARATION OF WIDE AMORPHOUS THIN STRIP HAVING THICKNESS OF 80-1,500 μM AT HIGH COOLING SPEED |
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Effective date of registration: 20221213 Address after: 710000 Tongda International Building, No. 41, Tangyan Road, High tech Zone, Xi'an, Shaanxi Applicant after: Xi'an xinhongshi Technology Co.,Ltd. Address before: 710000 No. 1, Fengcheng 12th Road, Weiyang District, Xi'an City, Shaanxi Province Applicant before: Zhou Zhongbo |