CN115322012A - Method for in-situ growth of SiC nanowires on surface of ultrahigh-temperature ceramic powder - Google Patents
Method for in-situ growth of SiC nanowires on surface of ultrahigh-temperature ceramic powder Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 114
- 239000011215 ultra-high-temperature ceramic Substances 0.000 title claims abstract description 89
- SICLLPHPVFCNTJ-UHFFFAOYSA-N 1,1,1',1'-tetramethyl-3,3'-spirobi[2h-indene]-5,5'-diol Chemical compound C12=CC(O)=CC=C2C(C)(C)CC11C2=CC(O)=CC=C2C(C)(C)C1 SICLLPHPVFCNTJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 24
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 37
- 239000008103 glucose Substances 0.000 claims abstract description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000011812 mixed powder Substances 0.000 claims abstract description 13
- 239000002070 nanowire Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims description 25
- 239000000725 suspension Substances 0.000 claims description 21
- 238000000498 ball milling Methods 0.000 claims description 20
- 238000005119 centrifugation Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000003760 magnetic stirring Methods 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000004321 preservation Methods 0.000 claims description 7
- 239000011863 silicon-based powder Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000008213 purified water Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 4
- 239000011216 ultra-high temperature ceramic matrix composite Substances 0.000 abstract description 3
- 230000003014 reinforcing effect Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
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Abstract
The invention relates to the technical field of high-temperature structural ceramic materials, and discloses a method for growing SiC nanowires on the surface of ultrahigh-temperature ceramic powder in situ. Preparing a carbon coating on the surface of the ultrahigh-temperature ceramic powder through the hydrothermal reaction of glucose, and mixing the ultrahigh-temperature ceramic powder containing the coating with Si and SiO 2 And (3) placing the mixed powder in a tube furnace, heating and preserving heat under the flowing argon protective atmosphere to obtain the ultrahigh-temperature ceramic powder of the in-situ grown SiC nanowire. The invention utilizes Si and SiO 2 SiO gas generated by the powder reacting at high temperature reacts with the carbon coating on the surface of the ultrahigh-temperature ceramic powder in situ to generate SiC nanowires. The method can uniformly introduce SiC nanowires into the ultrahigh-temperature ceramic powder, and provides a new way for reinforcing/toughening the ultrahigh-temperature ceramic composite material by the SiC nanowires.
Description
Technical Field
The invention relates to the technical field of high-temperature structural ceramic materials, in particular to a method for growing SiC nanowires on the surface of ultrahigh-temperature ceramic powder in situ.
Background
The ultrahigh-temperature ceramic has excellent high-temperature comprehensive performance, has great application prospect in the aspects of heat-resistant parts of hypersonic aircrafts and the like, and is a research hotspot of high-temperature structural ceramics. However, the ultra-high temperature ceramic material has intrinsic brittleness, and is very easy to generate brittle fracture under the action of large mechanical impact or thermal impact, so that the material fails. Therefore, many researchers try to toughen ultra-high temperature ceramic materials in different ways to improve the reliability of the materials in service. The SiC nanowires are introduced into the ultrahigh-temperature ceramic powder, so that the fracture toughness of the ultrahigh-temperature ceramic can be effectively improved, and the oxidation resistance can be obviously improved. However, it is difficult to uniformly disperse the SiC nanowire in the ultra-high temperature ceramic matrix by directly mixing the SiC nanowire with the ultra-high temperature ceramic powder in a conventional ball milling manner, and the microstructure of the SiC nanowire is damaged in the ball milling process. Therefore, a method for growing the SiC nanowires in situ in the ultra-high temperature ceramic powder is needed to be found, so that the SiC nanowires grown in situ can be uniformly dispersed in the ultra-high temperature ceramic, and the problem of structural damage of the SiC nanowires can be avoided.
Disclosure of Invention
Aiming at the problem of uniform dispersion of the existing SiC nanowires in the ultra-high temperature ceramic powder in the background technology, the invention provides the method for in-situ growth of the SiC nanowires on the surface of the ultra-high temperature ceramic powder, which has the advantages of uniform dispersion of the in-situ grown SiC nanowires in the ultra-high temperature ceramic, and avoidance of structural damage of the SiC nanowires, and solves the problems in the background technology.
The invention provides the following technical scheme: a method for growing SiC nanowires on the surface of ultrahigh-temperature ceramic powder in situ comprises the following steps:
step one, adding glucose powder into purified water, and performing magnetic stirring to prepare a glucose solution; dripping nitric acid into the prepared glucose solution to adjust the pH value of the glucose solution; placing the ultrahigh-temperature ceramic powder into a glucose solution, and carrying out ultrasonic and magnetic stirring to obtain an ultrahigh-temperature ceramic powder suspension;
step two, pouring the ultrahigh-temperature ceramic powder suspension obtained in the step one into a reaction kettle, and placing the reaction kettle in a drying oven for hydrothermal reaction;
taking out the ultra-high temperature ceramic powder suspension after the hydrothermal reaction, placing the ultra-high temperature ceramic powder suspension in a high-speed centrifuge for rapid centrifugation, pouring off the excess liquid after centrifugation, and drying the ultra-high temperature ceramic powder after centrifugation;
step four, si powder and SiO 2 The powders were mixed at a ratio of 7 2 Mixing the powder;
step five, the ultra-high temperature ceramic powder obtained in the step three and the Si and SiO obtained in the step four 2 And putting the mixed powder into a graphite mold, then putting the mold into a tubular furnace, heating to a set temperature and preserving heat, wherein the heating atmosphere is flowing argon protection, and obtaining the ultrahigh-temperature ceramic powder for in-situ growth of the SiC nanowire.
Preferably, in the first step, the concentration of the glucose solution is 5 to 10% (mass concentration), and the pH value of the glucose solution is 1 to 2.
Preferably, the hydrothermal reaction temperature in the second step is 180-200 ℃, and the heat preservation time at the hydrothermal reaction temperature is 6-8 h.
Preferably, the centrifugation speed in the third step is 6000 to 10000 r/min, the drying temperature is 40 to 50 ℃, and the drying time is 24 to 48 hours.
Preferably, in the fourth step, the medium for mechanical ball milling is absolute ethyl alcohol, the ball milling speed is 150-200 r/min, the ball milling time is 6-8 h, the drying mode adopts vacuum rotary drying, and the drying temperature is 50-60 ℃.
Preferably, si and SiO in step five 2 The total mass of the mixed powder is 0.5 to 1 time of the mass of the ultrahigh-temperature ceramic powder; the heating temperature of the tubular furnace is 1500-1600 ℃, the heat preservation time is 1-2 h, and the flow rate of argon is 30-60 ml/min.
Preferably, the ultrahigh-temperature ceramic powder, si and SiO in the step five 2 The mixed powder is arranged in a graphite mould at intervals and is based on Si and SiO in the flowing direction of argon gas 2 The mixed powder and the ultrahigh-temperature ceramic powder are placed in sequence.
The invention has the following beneficial effects:
1. according to the invention, a carbon coating is generated on the surface of the ultrahigh-temperature ceramic powder by adopting a glucose hydrothermal reaction, and the carbon coating is thin because the glucose concentration is controlled to be low, and more free carbon impurities cannot be introduced. Then using Si and SiO 2 SiO gas generated by the powder under high temperature reacts with the carbon coating on the surface of the superhigh temperature ceramic powder to generate SiC nano-wires. The method can uniformly introduce SiC nanowires into the ultrahigh-temperature ceramic powder, and provides a new way for reinforcing/toughening the ultrahigh-temperature ceramic composite material by the SiC nanowires.
2. The invention is prepared by mixing superhigh temperature ceramic, si and SiO 2 SiO gas generated by the powder under high temperature reacts with the carbon coating on the surface of the ultra-high temperature ceramic powder to generate SiC nanowires in situ, and the traditional preparation method of directly mixing the SiC nanowires with the ultra-high temperature ceramic powder in a ball milling way is abandoned, so that the damage to the microstructure of the SiC nanowires in the ball milling process is avoided, and the integrity of the prepared SiC nanowire reinforced/toughened ultra-high temperature ceramic composite material is ensured.
Drawings
FIG. 1 shows the ultra-high temperature ceramic powder of the present invention, si and SiO 2 A schematic diagram of a powder placing mode of the mixed powder in a graphite mold;
FIG. 2 is a scanning electron microscope image of the microstructure of the ultra-high temperature ceramic powder of the present invention after hydrothermal reaction with glucose solution;
fig. 3 is a scanning electron microscope image of the microstructure of the SiC nanowire obtained on the surface of the ultra-high temperature ceramic powder in example 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the embodiment of the invention, the ultra-high temperature ceramic powder adopts zirconium boride powder
Example 1:
step one, taking 5g of glucose powder, putting the glucose powder into 95g of purified water, and carrying out magnetic stirring to prepare a glucose solution; dripping nitric acid into the prepared glucose solution, and adjusting the pH value of the glucose solution to 2; and (3) putting 100g of zirconium boride powder into a glucose solution, and carrying out ultrasonic and magnetic stirring to obtain an ultra-high temperature ceramic powder suspension, wherein the ultra-high temperature ceramic powder suspension after ultrasonic stirring has good fluidity.
Step two, pouring the ultrahigh-temperature ceramic powder suspension into a reaction kettle, and placing the reaction kettle in a drying oven at 180 ℃ for heat preservation for 6 hours to carry out hydrothermal reaction;
and step three, taking out the ultra-high temperature ceramic powder suspension after the hydrothermal reaction, placing the ultra-high temperature ceramic powder suspension in a high-speed centrifuge for rapid centrifugation at 8000 rpm, pouring off the redundant liquid after centrifugation, and drying the ultra-high temperature ceramic powder after centrifugation at 50 ℃ for 24 hours.
Step four, weighing proper amount of Si powder and SiO 2 Powder of, among them, si powder and SiO 2 The mass ratio of the powder is 7:10, placing the mixture into absolute ethyl alcohol for mechanical ball milling, wherein the ball milling speed is 150 revolutions per minute, and the ball milling time is 6 hours; then the slurry after ball milling is placed in a vacuum rotary dryer for drying, the drying temperature is 60 ℃, and Si and SiO are obtained 2 Mixing the powder.
Step five, taking 100g of Si and SiO prepared in step four 2 Placing the mixed powder and the ultra-high temperature ceramic powder in step three into a graphite mold according to the mode shown in figure 1, specifically, the ultra-high temperature ceramic powder, si and SiO 2 The mixed powder is arranged in a graphite mould at intervals, namely a certain gap is formed between the two kinds of powder, and Si and SiO are firstly arranged in the flowing direction of argon 2 Mixing the powder, and sequentially placing the rear ultra-high temperature ceramic powder, and ensuring that the ultra-high temperature ceramic powder is spread as much as possible. And then, placing the die in a tube furnace, heating to 1550 ℃ and preserving heat for 1h, wherein the heating atmosphere is the protection of flowing argon, and the flow rate of the argon is 30ml/min, thus obtaining the ultrahigh-temperature ceramic powder for in-situ growth of the SiC nanowire.
Example 2:
step one, taking 10g of glucose powder, putting the glucose powder into 90g of purified water, and performing magnetic stirring to prepare a glucose solution; dripping nitric acid into the prepared glucose solution, and adjusting the pH value of the glucose solution to 2; 100g of zirconium boride powder is placed in a glucose solution, and ultrasonic and magnetic stirring are carried out to obtain the ultrahigh-temperature ceramic powder suspension with good fluidity.
Pouring the ultrahigh-temperature ceramic powder suspension into a reaction kettle, and placing the reaction kettle in a drying oven at 200 ℃ for heat preservation for 8 hours to perform hydrothermal reaction;
and step three, taking out the ultra-high temperature ceramic powder suspension after the hydrothermal reaction, placing the suspension in a high-speed centrifuge for rapid centrifugation at the speed of 10000 rpm, pouring off the redundant liquid after centrifugation, and drying the ultra-high temperature ceramic powder after centrifugation at 50 ℃ for 48 hours.
Step four, according to the mass ratio of 7:10 weighing proper amount of Si powder and SiO 2 Putting the powder into absolute ethyl alcohol for mechanical ball milling, wherein the ball milling speed is 180 r/min, and the ball milling time is 6h; then placing the ball-milled slurry into a vacuum rotary dryer for drying at 50 ℃ to obtain Si and SiO 2 Mixing the powder.
Step five, taking 50g of Si and SiO prepared in step four 2 Placing the mixed powder and the ultra-high temperature ceramic powder in the third step into a graphite mould according to the mode shown in the attached drawing 1, and ensuring that the ultra-high temperature ceramic powder is spread as much as possible. And then placing the die in a tube furnace, heating to 1600 ℃, and preserving heat for 1h, wherein the heating atmosphere is under the protection of flowing argon, and the flow rate of the argon is 50ml/min, thus obtaining the ultrahigh-temperature ceramic powder for in-situ growth of the SiC nanowires.
Example 3:
step one, taking 5g of glucose powder, putting the glucose powder into 95g of purified water, and carrying out magnetic stirring to prepare a glucose solution; dripping nitric acid into the prepared glucose solution, and adjusting the pH value of the glucose solution to 1; and (3) putting 200g of zirconium boride powder into a glucose solution, and carrying out ultrasonic and magnetic stirring to obtain the ultrahigh-temperature ceramic powder suspension.
Pouring the ultrahigh-temperature ceramic powder suspension into a reaction kettle, and placing the reaction kettle in a drying oven at 180 ℃ for heat preservation for 8 hours to perform hydrothermal reaction;
and step three, taking out the ultra-high temperature ceramic powder suspension after the hydrothermal reaction, placing the ultra-high temperature ceramic powder suspension in a high-speed centrifuge for rapid centrifugation at the speed of 10000 rpm, pouring off the redundant liquid after centrifugation, and drying the ultra-high temperature ceramic powder after centrifugation at 45 ℃ for 48 hours.
Step four, weighing proper amount of Si powder and SiO 2 The powder is put into absolute ethyl alcohol for mechanical ball milling, and Si powder and SiO powder 2 The mass ratio of the powder is 7:10, ball milling rotation speed is 200 r/min, and ball milling time is 6h; then the ball-milled slurry is placed in a vacuum rotary dryer for drying at the drying temperature of 60 ℃ to obtain Si and SiO 2 Mixing the powder.
Step five, taking 200g of Si and SiO prepared in step four 2 Placing the mixed powder and the ultra-high temperature ceramic powder in the third step into a graphite mould according to the mode shown in the attached drawing 1, and ensuring that the ultra-high temperature ceramic powder is spread as much as possible. And then placing the die in a tube furnace, heating to 1500 ℃, and preserving heat for 1h, wherein the heating atmosphere is under the protection of flowing argon, and the flow rate of the argon is 50ml/min, so that the ultrahigh-temperature ceramic powder for in-situ growth of the SiC nanowires can be obtained.
Referring to attached drawings 2 and 3, wherein the attached drawing 2 is a scanning electron microscope image of a microstructure of ultra-high temperature ceramic powder after hydrothermal reaction with a glucose solution, and the attached drawing 3 is a scanning electron microscope image of a microstructure of a SiC nanowire obtained on the surface of the ultra-high temperature ceramic powder in example 1. The method can effectively prepare the carbon coating on the surface of the ultrahigh-temperature ceramic powder, and successfully introduces the SiC nanowires into the ultrahigh-temperature ceramic powder, so that the nanowires are uniformly distributed.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A method for growing SiC nanowires on the surface of ultrahigh-temperature ceramic powder in situ is characterized by comprising the following steps:
step one, adding glucose powder into purified water, and performing magnetic stirring to prepare a glucose solution; dripping nitric acid into the prepared glucose solution to adjust the pH value of the glucose solution; placing the ultrahigh-temperature ceramic powder into a glucose solution, and carrying out ultrasonic and magnetic stirring to obtain an ultrahigh-temperature ceramic powder suspension;
step two, pouring the ultrahigh-temperature ceramic powder suspension obtained in the step one into a reaction kettle, and placing the reaction kettle in a drying oven for hydrothermal reaction;
taking out the ultra-high temperature ceramic powder suspension after the hydrothermal reaction, placing the ultra-high temperature ceramic powder suspension in a high-speed centrifuge for rapid centrifugation, pouring off the redundant liquid after centrifugation, and drying the ultra-high temperature ceramic powder after centrifugation;
step four, si powder and SiO 2 The powders were mixed at a ratio of 7 2 Mixing the powder;
step five, the ultra-high temperature ceramic powder obtained in the step three and the Si and SiO obtained in the step four 2 And putting the mixed powder into a graphite mold, then putting the mold into a tubular furnace, heating to a set temperature and preserving heat, wherein the heating atmosphere is flowing argon protection, and obtaining the ultrahigh-temperature ceramic powder for in-situ growth of the SiC nanowire.
2. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: in the first step, the concentration of the glucose solution is 5-10% (mass concentration), and the pH value of the glucose solution is 1-2.
3. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: in the second step, the hydrothermal reaction temperature is 180-200 ℃, and the heat preservation time at the hydrothermal reaction temperature is 6-8 h.
4. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: in the third step, the centrifugal speed is 6000 to 10000 r/min, the drying temperature is 40 to 50 ℃, and the drying time is 24 to 48 hours.
5. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: in the fourth step, the medium of the mechanical ball milling is absolute ethyl alcohol, the ball milling rotating speed is 150-200 r/min, the ball milling time is 6-8 h, the drying mode adopts vacuum rotary drying, and the drying temperature is 50-60 ℃.
6. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: step five of Si and SiO 2 The total mass of the mixed powder is 0.5 to 1 time of the mass of the ultrahigh-temperature ceramic powder; the heating temperature of the tubular furnace is 1500-1600 ℃, the heat preservation time is 1-2 h, and the flow rate of argon is 30-60 ml/min.
7. The method for in-situ growth of the SiC nanowires on the surface of the ultrahigh-temperature ceramic powder according to claim 1, wherein the method comprises the following steps: step five, ultra-high temperature ceramic powder, si and SiO 2 The mixed powder is arranged in a graphite mould at intervals and is based on Si and SiO in the flowing direction of argon gas 2 Mixed powderThe body and the ultrahigh temperature ceramic powder are placed in sequence.
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