CN115295647A - Local electric field induced silicon photoelectric detector and preparation method thereof - Google Patents
Local electric field induced silicon photoelectric detector and preparation method thereof Download PDFInfo
- Publication number
- CN115295647A CN115295647A CN202211219235.0A CN202211219235A CN115295647A CN 115295647 A CN115295647 A CN 115295647A CN 202211219235 A CN202211219235 A CN 202211219235A CN 115295647 A CN115295647 A CN 115295647A
- Authority
- CN
- China
- Prior art keywords
- layer
- ohmic electrode
- electrode layer
- doped region
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 230000005684 electric field Effects 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 95
- 239000000969 carrier Substances 0.000 claims abstract description 35
- 238000001514 detection method Methods 0.000 claims abstract description 7
- -1 boron ion Chemical class 0.000 claims description 38
- 229910052796 boron Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 229910015900 BF3 Inorganic materials 0.000 claims 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a local electric field induced silicon photoelectric detector and a preparation method thereof, wherein the local electric field induced silicon photoelectric detector comprises: the photoelectric detection device comprises an absorption layer, a first ohmic electrode layer and a second ohmic electrode layer, wherein the first ohmic electrode layer, the absorption layer and the second ohmic electrode layer are sequentially stacked, a plurality of modulation doping regions arranged at intervals are arranged on one side, facing the first ohmic electrode layer, of the absorption layer, and the modulation doping regions are configured to induce the photon-generated carrier momentum of the absorption layer and collect carriers, so that the photoelectric detection efficiency is improved. The local electric field induced silicon photoelectric detector has high photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a local electric field induced silicon photoelectric detector and a preparation method thereof.
Background
The silicon photoelectric detector has the advantages of high sensitivity, low cost, low power consumption, easy formation of a two-dimensional area array, integration with a CMOS reading circuit and the like, and is widely applied to a plurality of high-tech fields such as aerospace, deep space exploration, satellite remote sensing, investigation and navigation.
An important evaluation index of the sensitivity of a photodetector is the quantum efficiency, which is the ratio of the number of incident photons to the number of measured charges, which is proportional to the photoelectric conversion efficiency of the photodetector. Generally, electrodes of the photoelectric detector are arranged on two sides of the light sensing surface, and carriers are collected to the electrodes on the two sides to form measurable photocurrent. After solving the incident efficiency determined by the surface anti-reflection structure and the internal quantum efficiency determined by the material quality, the method improves
Interface quality is a main technical approach for improving the photo-generated charge collection efficiency of the photoelectric detector at present.
However, during the device fabrication process
Contamination, damage, and the like introduced at the interface and interface states due to the difference in lattice constant are unavoidable, so that the device performance is difficult to further improve.
Disclosure of Invention
Based on the above, the invention provides a local electric field induced silicon photoelectric detector and a preparation method thereof, which further improve the quantum efficiency of the existing detector and solve the defects of the prior art.
In a first aspect, the present invention provides a local electric field induced silicon photodetector, comprising: the photoelectric detection device comprises an absorption layer, a first ohmic electrode layer and a second ohmic electrode layer, wherein the first ohmic electrode layer, the absorption layer and the second ohmic electrode layer are sequentially stacked, one side, facing the first ohmic electrode layer, of the absorption layer is provided with a plurality of modulation doping regions arranged at intervals, and the modulation doping regions are configured to induce momentum of photon-generated carriers of the absorption layer and collect the carriers, so that the photoelectric detection efficiency is improved.
In a possible implementation manner, in the local electric field induced silicon photodetector provided by the invention, the modulation doped region is in a strip shape, and the plurality of modulation doped regions are arranged at intervals along a first direction, wherein the first direction is parallel to the extending direction of the absorption layer, and the first direction is perpendicular to the length direction of the modulation doped region.
In a possible implementation manner, in the local electric field induced silicon photodetector provided by the present invention, the modulation doped regions are in a strip shape, and the plurality of modulation doped regions include at least one first modulation doped region whose length direction is along a second direction and at least one second modulation doped region whose length direction is along a third direction, where the second direction is perpendicular to the third direction.
In a possible implementation manner, in the local electric field induced silicon photodetector provided by the invention, the modulation doped region includes a lightly doped region, an undoped region and a heavily doped region, the lightly doped region, the undoped region and the heavily doped region are sequentially overlapped, and the heavily doped region is disposed on one side of the undoped region facing the first ohmic electrode layer.
In a possible implementation manner, in the local electric field induced silicon photodetector provided by the invention, the doping element in the modulation doped region is boron ions or boron difluoride ions, and the doping concentration of the boron ions or the boron difluoride ions in the lightly doped region is
The doping concentration of boron ions or boron difluoride ions in the heavily doped region is
。
In a possible implementation manner, the local electric field induced silicon photodetector further includes a first ohmic contact layer, and at least a part of the modulation doped region forms the first ohmic contact layer.
In a possible implementation manner, the local electric field induced silicon photodetector further includes an anti-reflection layer, the first ohmic electrode layer and the anti-reflection layer are disposed on the same layer, and the first ohmic electrode layer is in contact with the first ohmic contact layer through the anti-reflection layer.
In a possible implementation manner, the local electric field induced silicon photodetector further includes a second ohmic contact layer disposed between the second ohmic electrode layer and the absorption layer.
In a second aspect, the present invention provides a method for manufacturing a local electric field induced silicon photodetector, which is used for manufacturing the local electric field induced silicon photodetector provided in the first aspect, and the method includes:
forming a plurality of first grooves arranged at intervals on the absorption layer;
doping within the first recess to form a modulation doped region configured to induce a photon-generated carrier momentum of the absorber layer and collect carriers;
forming a first ohmic electrode layer on the absorption layer having the modulation doping region;
a second ohmic electrode layer is formed on the side of the absorber layer facing away from the first ohmic electrode.
In a possible implementation manner, the method for manufacturing a local electric field induced silicon photodetector provided by the present invention includes forming a first ohmic electrode layer on an absorption layer having a modulation doped region, and includes:
forming an anti-reflection layer on the absorption layer with the modulation doping area;
forming a second groove on the anti-reflection layer;
and forming a first ohmic electrode layer in the second groove.
The local electric field induced silicon photoelectric detector comprises an absorption layer, a first ohmic electrode layer, a second ohmic electrode layer and a modulation doping area, wherein the absorption layer is arranged for absorbing lightPhoton energy, so that carriers in the absorption layer are diffused to form photocurrent, the first ohmic electrode layer and the second ohmic electrode layer are arranged to be connected with a bias circuit, so that bias voltage is applied to the local electric field induced silicon photoelectric detector through the first ohmic electrode layer and the second ohmic electrode layer, the photocurrent is output through the first ohmic electrode layer and the second ohmic electrode layer, a modulation doping area is arranged in the absorption layer, so that a local electric field is established in the absorption layer, carrier momentum is further induced, the service life of the carriers is prolonged, a collecting channel of the carriers is increased in the modulation doping area, the transverse diffusion distance of the carriers is shortened, and the transverse diffusion distance of the carriers is reduced
The effect of scattering effects of interface states on carrier lifetime. Therefore, the local electric field induced silicon photoelectric detector has higher photoelectric conversion efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a local electric field induced silicon photodetector according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an energy band structure of a local electric field induced silicon photodetector provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a prior art energy band structure of a silicon photodetector;
fig. 4 is a first schematic structural diagram of an absorption layer and a modulation doped region in a local electric field induced silicon photodetector provided in an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an absorption layer and a modulation doped region in a local electric field induced silicon photodetector according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a modulation doped region in a local electric field induced silicon photodetector according to an embodiment of the present invention;
FIG. 7 is a first schematic flow chart of a method for manufacturing a local electric field induced silicon photodetector according to an embodiment of the present invention;
FIG. 8 is a second schematic flowchart of a method for manufacturing a local electric field induced silicon photodetector according to an embodiment of the present invention;
fig. 9 is a third schematic flow chart of a method for manufacturing a local electric field induced silicon photodetector according to an embodiment of the present invention.
Description of reference numerals:
100-an absorbent layer;
200-a first ohmic electrode layer;
300-a second ohmic electrode layer;
400-modulation doping region;
400 a-a first modulation doped region;
400 b-a second modulation doped region;
410-heavily doped region;
420-an undoped region;
430-lightly doped region;
500-an anti-reflection layer;
600-second ohmic contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be described in more detail below with reference to the accompanying drawings in the preferred embodiments of the present invention. In the drawings, the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The described embodiments are only some, but not all embodiments of the invention. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
In the description of the present invention, it should be noted that unless otherwise specifically stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may for example be fixed or indirectly connected through intervening media, or may be interconnected between two elements or may be in the interactive relationship between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
The terms "first," "second," and "third" (if any) in the description and claims of the invention and the above-described drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein.
Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or display that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or display.
The silicon photoelectric detector has the advantages of high sensitivity, low cost, low power consumption, easy formation of a two-dimensional area array, integration with a CMOS read-out circuit and the like, and is widely applied to a plurality of high-tech fields such as aerospace, deep space exploration, satellite remote sensing, investigation and navigation.
The quantum efficiency is the ratio of the number of incident photons to the number of measured charges, and is proportional to the photoelectric conversion efficiency of the photodetector. Usually, the electrodes of the photoelectric detector are arranged at two sides of the photosensitive surface, and carriers are collected to the electrodes at two sides to form measurable photocurrent, so that the material quality is improved
Interface state quality is currently the main technical approach to improve photodetectors.
However, during the device fabrication process
Contamination, damage, etc. introduced at the interface and the interface state caused by the lattice constant are inevitable, so that the device performance is difficult to further improve. This is because in silicon photodetectors it is generally necessary to increase the incident light flux by increasing the area of the photosurface, which is however subjected to a high density during the lateral transit of the carriers
The scattering effect of the interface state causes high carrier loss and reduces the service life of the carrier, and the diffusion length of the carrier is less than the required transition distance, so that the carrier collection efficiency of the silicon photoelectric detector is reduced. Meanwhile, due to the fact that the lattice constants of the silicon materials are different, the area of a photosensitive surface is increased, and the lattice defects of the silicon photoelectric detector are increased, so that the dark current of the silicon photoelectric detector is increased, and the sensitivity and the photoelectric conversion efficiency of the silicon photoelectric detector are reduced. Secondly, due to the limitation of the existing preparation process technology, contamination and damage are inevitable in the preparation process of the silicon photoelectric detector, and the contamination and damage can reduce the photoelectric conversion efficiency of the silicon photoelectric detector.
Based on the above, the invention provides a local electric field induced silicon photodetector and a preparation method thereof, so as to solve the defects of the prior art.
The technical scheme of the local electric field induced silicon photodetector and the preparation method thereof provided by the embodiment of the invention is explained in detail below with reference to the accompanying drawings.
Referring to fig. 1, a local electric field induced silicon photodetector provided by an embodiment of the present invention includes: the photoelectric detector comprises an absorption layer 100, a first ohmic electrode layer 200 and a second ohmic electrode layer 300, wherein the first ohmic electrode layer 200, the absorption layer 100 and the second ohmic electrode layer 300 are sequentially stacked, a plurality of modulation doping regions 400 are arranged at intervals on one side, facing the first ohmic electrode layer 200, of the absorption layer 100, and the modulation doping regions 400 are configured to induce the momentum of photon-generated carriers of the absorption layer 100 and collect the carriers, so that the photoelectric detection efficiency is improved.
In this embodiment, the absorption layer 100 is used to absorb photon energy, so that carriers in the absorption layer 100 diffuse to form a photocurrent, that is, when light irradiates the local electric field induced silicon photodetector, the absorption layer 100 can absorb photons and generate electrons and holes in the absorption layer 100, and the electrons are collected to form a positive photocurrent, or the holes are collected to form a negative photocurrent.
Among them, the absorption layer 100 may be a silicon absorption layer.
Since the local electric field induced silicon photodetector needs to be biased during operation, the first ohmic electrode layer 200 and the second ohmic electrode layer 300 are used to connect to a bias circuit, so that the local electric field induced silicon photodetector is biased positively or negatively by the first ohmic electrode layer 200 and the second ohmic electrode layer 300. And after the carriers of the absorption layer 100 are collected to form a photocurrent, the photocurrent may be output through the first and second ohmic electrode layers 200 and 300. In order to prevent the first ohmic electrode layer 200 from blocking light, the first ohmic electrode layer 200 may be disposed at two opposite ends of the absorption layer 100.
Referring to fig. 2 and 3, the modulation doping region 400 is used to increase the carrier momentum of the absorption layer 100, and a local electric field can be formed in the absorption layer 100 by disposing the modulation doping region 400 in the absorption layer 100, the absorption layer 100 generates an up-and-down fluctuation of an energy band, and the carrier momentum can be adjusted by the change of the energy band, so that electrons in the absorption layer 100 tend to diffuse to the bottom of the conduction band and holes tend to diffuse to the top of the valence band. Compared with the silicon photoelectric detector in the prior art, in the silicon photoelectric detector induced by the local electric field provided by the embodiment of the invention, the carriers in the absorption layer 100 are not only diffused to the first ohmic electrode layer 200, but also induced to generate carrier momentum in the diffusion process, so that the service life of the carriers is prolonged.
In the process of diffusing the carriers to the first ohmic electrode layer 200, since the modulation doping region 400 is disposed between the absorption layer 100 and the first ohmic electrode layer 200, the collection channels of the carriers are increased, although the carriers are still subjected to
The scattering effect of the interface state, but since the lateral diffusion distance of the carriers is shortened by modulating the doped region 400, the carriers form photocurrent within the lifetime range, thereby reducing the amount of photocurrent
The influence of the scattering effect of the interface state on the service life of the current carrier improves the collection efficiency of the silicon photoelectric detector induced by the local electric field.
Meanwhile, as the modulation doping area 400 establishes a plurality of channels for collecting carriers, and the channels collect the carriers in parallel, the collection efficiency of the carriers in the local electric field induced silicon photoelectric detector with a large area of the absorption layer 100 can be improved, so that the photoelectric conversion efficiency of the local electric field induced silicon photoelectric detector is improved.
It can be understood that when the modulation doping region 400 is doped p-type, the local electric field induced silicon photodetector has a pin structure, electrons on the surface of the absorption layer 100 close to the first ohmic electrode layer 200 are collected and transported to the first ohmic electrode layer 200 to form a positive photocurrent, and holes on the surface of the absorption layer 100 close to the second ohmic electrode are collected and transported to the second ohmic electrode layer 300 to form a negative photocurrent.
Or, when the modulation doping region 400 is doped n-type, the local electric field induced silicon photodetector is in an nip structure, holes on the surface of the absorption layer 100 close to the first ohmic electrode layer 200 are collected and transported to the first ohmic electrode layer 200 to form a negative photocurrent, and electrons on the surface of the absorption layer 100 close to the second ohmic electrode are collected and transported to the second ohmic electrode layer 300 to form a positive photocurrent.
The local electric field induced silicon photodetector provided by the embodiment of the invention comprises an absorption layer 100, a first ohmic electrode layer 200, a second ohmic electrode layer 300 and a modulation doping region 400, wherein the absorption layer 100 is arranged for absorbing photon energy to enable carriers in the absorption layer 100 to diffuse to form photocurrent, the first ohmic electrode layer 200 and the second ohmic electrode layer 300 are arranged for being connected with a bias circuit to apply bias voltage to the local electric field induced silicon photodetector through the first ohmic electrode layer 200 and the second ohmic electrode layer 300 and output photocurrent through the first ohmic electrode layer 200 and the second ohmic electrode layer 300, the modulation doping region 400 is arranged in the absorption layer 100 to establish a local electric field in the absorption layer 100 and further induce carrier momentum, so that the carrier service life is improved, the modulation doping region 400 is provided with a carrier collecting channel, so that the transverse diffusion distance of the carriers is shortened, and further the transverse diffusion distance of the carriers is reduced
The effect of scattering of interface states on carrier lifetime. Therefore, the local electric field induced silicon photoelectric detector provided by the embodiment of the invention has higher photoelectric conversion efficiency.
Referring to fig. 4, in some embodiments, the modulation doping region 400 has a stripe shape, and a plurality of modulation doping regions 400 are spaced along a first direction, wherein the first direction is parallel to an extending direction of the absorption layer 100, and the first direction is perpendicular to a length direction of the modulation doping region 400. The first direction is the X direction in fig. 2.
In this way, by disposing the modulation doped regions 400 in a stripe shape in the absorption layer 100 to construct a plurality of parallel carrier collection channels in the absorption layer 100, carriers in the absorption layer 100 are transported to the first ohmic electrode layer 200 through the modulation doped regions 400, so as to improve the carrier collection efficiency, thereby improving the photoelectric conversion efficiency of the local electric field induced silicon photodetector.
Referring to fig. 5, or in other embodiments, the modulation doped regions 400 have a stripe shape, and the plurality of modulation doped regions 400 includes at least one first modulation doped region 400a having a length direction along a second direction and at least one second modulation doped region 400b having a length direction along a third direction, wherein the second direction is perpendicular to the third direction. The second direction is the Y direction in fig. 3, and the third direction is the Z direction in fig. 3.
In this way, the crisscrossed modulation doping regions 400 are formed in the absorption layer 100 to construct a plurality of parallel carrier collection channels in the absorption layer 100, so that carriers in the absorption layer 100 are transported to the first ohmic electrode layer 200 through the plurality of crisscrossed modulation doping regions 400 to improve the carrier collection efficiency, thereby improving the photoelectric conversion efficiency of the local electric field induced silicon photodetector.
Referring to fig. 1 and 6, in an implementation, the modulation doping region 400 includes a lightly doped region 430, an undoped region 420 and a heavily doped region 410, the lightly doped region 430, the undoped region 420 and the heavily doped region 410 are sequentially overlapped, and the heavily doped region 410 is disposed at a side of the undoped region 420 facing the first ohmic electrode layer 200.
Thus, when light irradiates the surface of the absorption layer 100, after the absorption layer 100 absorbs photon energy, electrons and holes are separated and generated by modulating the action of the local electric field generated by the doped region 400, and the electrons or holes sequentially pass through the lightly doped region 430, the undoped region 420 and the heavily doped region 410 and are finally transported to the first ohmic electrode layer 200 through the heavily doped region 410, so that a photocurrent is formed.
It should be understood that when the modulation-doped region 400 is doped p-type, electrons are collected and transported to the first ohmic electrode layer 200 through the heavily doped layer to form a positive photocurrent, and holes are collected and transported to the second ohmic electrode layer 300 to form a negative photocurrent.
Alternatively, when the modulation doping region 400 is doped n-type, holes are collected and transported to the first ohmic electrode layer 200 through the heavily doped layer to form a negative photocurrent, and electrons are collected and transported to the second ohmic electrode layer 300 to form a positive photocurrent.
In one possible implementation manner, the doping element of the modulation doping region 400 is boron ions or boron difluoride ions, and the doping concentration of the boron ions or the boron difluoride ions in the lightly doped region 430 is
The heavily doped region 410 has a doping concentration of boron ions or boron difluoride ions of
。
The doping process of the boron ions or the boron difluoride ions is easy to realize, so that the preparation of the local electric field induced silicon photoelectric detector is facilitated. Specifically, the lightly doped region 430 has a doping concentration of boron ions or boron difluoride ions of
If the doping concentration of boron ions or boron difluoride ions in the lightly doped region 430 is higher than that of the boron ions or boron difluoride ions
The carrier transport in the lightly doped region 430 is not smooth enough, and if the doping concentration of boron ions or boron difluoride ions in the lightly doped region 430 is lower than that
The lightly doped region 430 is close to intrinsic absorption and does not reach the condition of impurity absorption.
The heavily doped region 410 has a doping concentration of boron ions or boron difluoride ions of
If the doping concentration of boron ions or boron difluoride ions in the heavily doped region 410 is higher than
The existing preparation process is difficult to implement, and if the doping concentration of boron ions or boron difluoride ions in the heavily doped region 410 is lower than that of boron ions or boron difluoride ions
An ohmic contact layer between the absorption layer 100 and the first ohmic electrode layer 200 cannot be realized. Therefore, the doping concentration of boron ions or boron difluoride ions in the lightly doped region 430 is set to
And the doping concentration of boron ions or boron difluoride ions in the heavily doped region 410 is set to
Is a reasonable range.
In a possible implementation manner, the local electric field induced silicon photodetector provided in the embodiment of the present invention further includes a first ohmic contact layer, and at least a portion of the modulation-doped region 400 forms the first ohmic contact layer.
Since the absorption layer 100 made of silicon has a high surface state density, and the first ohmic electrode layer 200 is usually made of a metal material such as aluminum, gold, silver, or nickel, the absorption layer 100 is directly connected to the first ohmic electrode layer 200 to form a barrier layer, and therefore, a first ohmic contact layer is disposed between the absorption layer 100 and the first ohmic electrode layer 200, so that the first ohmic electrode layer 200 obtains a good ohmic contact.
In specific implementation, the doping elements and doping concentrations of the first ohmic contact layer and the modulation doping region 400 may be the same, that is, part or all of the modulation doping region 400 serves as a first ohmic contact layer, so that the first ohmic contact layer is in contact with the first ohmic electrode layer 200.
Referring to fig. 1, in a possible implementation manner, the local electric field induced silicon photodetector provided in the embodiment of the present invention further includes an anti-reflection layer 500, the first ohmic electrode layer 200 and the anti-reflection layer 500 are disposed in the same layer, and the first ohmic electrode layer 200 is in contact with the first ohmic contact layer through the anti-reflection layer 500.
The anti-reflection layer 500 may increase the transmittance of light of a target wavelength in incident light and decrease the reflectance of light of the target wavelength, so that when light is incident, the light is firstly incident into the anti-reflection layer 500, and more light of the target wavelength enters the absorption layer 100, thereby improving the incident efficiency of light of the target wavelength.
In order to apply a bias voltage to the absorption layer 100 through the first ohmic electrode layer 200, a portion of the first ohmic contact layer is connected to the first ohmic electrode layer 200 through the anti-reflection layer 500, so that carriers are transported to the first ohmic contact electrode through the first ohmic contact layer.
Wherein, the anti-reflection layer 500 may be a silicon dioxide anti-reflection layer, a silicon nitride anti-reflection layer, or a composite anti-reflection layer formed by silicon dioxide and silicon nitride.
Referring to fig. 1, in some embodiments, the local electric field induced silicon photodetector provided by the embodiments of the present invention further includes a second ohmic contact layer 600, and the second ohmic contact layer 600 is disposed between the second ohmic electrode layer 300 and the absorption layer 100.
It is understood that the absorption layer 100 made of silicon has a high surface state density, while the second ohmic electrode is usually made of a metal material such as aluminum, gold, silver or nickel, and the absorption layer 100 is directly connected to the second ohmic electrode layer 300 to form a barrier layer, so that the second ohmic contact layer 600 is disposed between the absorption layer 100 and the second ohmic electrode layer 300 to obtain a better ohmic contact of the second ohmic electrode layer 300.
In addition, an embodiment of the present invention further provides a method for manufacturing a local electric field induced silicon photodetector, which is used for manufacturing the local electric field induced silicon photodetector provided in the foregoing embodiment, wherein a structure and a working principle of the local electric field induced silicon photodetector are described in detail in the foregoing embodiment, and are not repeated here.
For convenience of description, the modulation doped region 400 is p-type doped for example, and referring to fig. 7, the method for manufacturing a local electric field induced silicon photodetector includes:
and S101, forming a plurality of first grooves arranged at intervals on the absorption layer 100.
The absorption layer 100 is first cleaned and pretreated, and a first groove pattern is formed on the absorption layer 100 by photolithography, so that the modulation doping region 400 is formed in the first groove.
And S102, doping in the first groove to form a modulation doping region 400.
The modulation doping region 400 is formed in the first groove through a doping process such as boron ion implantation, diffusion, etc., and then the photoresist is removed, thereby forming the modulation doping region 400 in the absorption layer 100.
And S103, forming a first ohmic electrode layer 200 on the absorption layer 100 with the modulation doping region 400.
Thus, the first ohmic electrode layer 200 is formed at one side of the absorption layer 100 so that carriers of the absorption layer 100 are collected and transported to the first ohmic electrode layer 200 by the modulation-doped region 400.
For example, the first metal electrode layer may be formed by magnetron sputtering or electron beam evaporation, a pattern of the first ohmic electrode layer 200 is formed on the first metal electrode layer by lithography, and after the first metal electrode layer is etched, the photoresist is removed, thereby obtaining the first ohmic electrode layer 200. The first ohmic electrode layer 200 may include one or more metals of gold, silver, titanium, or aluminum, which is not limited in this embodiment.
Referring to fig. 8, in detail, the forming of the first ohmic electrode layer 200 on the absorption layer 100 having the modulation doped region 400 includes:
and S1031, forming an anti-reflection layer 500 on the absorption layer 100 with the modulation doped region 400.
S1032, a second groove is formed on the anti-reflection layer 500.
S1033, forming a first ohmic electrode layer 200 in the second groove.
Taking the anti-reflection layer 500 as a silicon dioxide anti-reflection layer as an example, silicon dioxide is grown on the surface of the absorption layer 100 by thermal oxidation to form a silicon dioxide anti-reflection layer, and then a second groove pattern is formed on the silicon dioxide anti-reflection layer by lithography, so as to etch the silicon dioxide anti-reflection layer, so as to form the first ohmic electrode layer 200 on the silicon dioxide anti-reflection layer, and connect a part of the modulation doped region 400 with the first ohmic electrode layer 200.
And S104, forming a second ohmic electrode layer 300 on one side of the absorption layer 100, which is far away from the first ohmic electrode layer 200.
Thereby forming the first and second ohmic electrode layers 200 and 300 at opposite sides of the absorption layer 100.
Referring to fig. 9, specifically, forming the second ohmic electrode layer 300 on a side of the absorption layer 100 facing away from the first ohmic electrode layer 200 includes:
and S1041, forming a second ohmic contact layer 600 on the side, away from the first ohmic electrode layer 200, of the absorption layer 100.
S1042, forming a second ohmic electrode layer 300 on the second ohmic contact layer 600.
First, a second ohmic contact layer 600 is formed on a surface of the absorption layer 100 facing away from the first ohmic electrode layer 200 by doping processes such as phosphorus ion implantation and diffusion.
Then, a second ohmic electrode layer 300 is formed on the second ohmic contact layer 600 by magnetron sputtering or electron beam evaporation, wherein the second ohmic electrode layer 300 may include one or more metals of gold, silver, titanium, or aluminum, which is not limited in this embodiment.
With respect to numerical values and numerical ranges: it should be noted that the numerical values and numerical ranges related to the embodiments of the present invention are approximate values, and there may be a certain range of errors depending on the manufacturing process, and the error may be considered as negligible by those skilled in the art.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A local electric field induced silicon photodetector, comprising: the photoelectric detector comprises an absorption layer, a first ohmic electrode layer and a second ohmic electrode layer, wherein the first ohmic electrode layer and the absorption layer are sequentially stacked, one side of the first ohmic electrode layer is provided with a plurality of modulation doping regions arranged at intervals, and the modulation doping regions are configured to induce the photon-generated carrier momentum of the absorption layer and collect carriers, so that the photoelectric detection efficiency is improved.
2. The local electric field induced silicon photodetector of claim 1, wherein the modulation doped region is in a shape of a stripe and a plurality of the modulation doped regions are spaced apart along a first direction, wherein the first direction is parallel to an extension direction of the absorption layer and the first direction is perpendicular to a length direction of the modulation doped region.
3. The local electric field induced silicon photodetector of claim 1, wherein said modulation doped regions are in the shape of stripes, and wherein said plurality of modulation doped regions comprises at least one first modulation doped region having a length direction along a second direction and at least one second modulation doped region having a length direction along a third direction, wherein said second direction is perpendicular to said third direction.
4. The local electric field induced silicon photodetector as claimed in claim 2 or 3, wherein the modulation doped region comprises a lightly doped region, an undoped region and a heavily doped region, the lightly doped region, the undoped region and the heavily doped region are sequentially overlapped, and the heavily doped region is disposed on one side of the undoped region facing the first ohmic electrode layer.
5. The local electric field induced silicon photodetector of claim 4, wherein the doping element of said modulation doped region is boron ion or boron difluoride ion, said boron ion or said boron difluoride ion in said lightly doped regionThe boron fluoride ion has a doping concentration of
The doping concentration of the boron ions or the boron difluoride ions in the heavily doped region is
。
6. The local electric field induced silicon photodetector of claim 4, further comprising a first ohmic contact layer, at least a portion of the modulation doped region forming the first ohmic contact layer.
7. The local electric field induced silicon photodetector of claim 6, further comprising an anti-reflection layer, wherein the first ohmic electrode layer and the anti-reflection layer are disposed on the same layer, and the first ohmic electrode layer is in contact with the first ohmic contact layer through the anti-reflection layer.
8. The local electric field induced silicon photodetector of any one of claims 1 to 3, further comprising a second ohmic contact layer disposed between the second ohmic electrode layer and the absorber layer.
9. A method of fabricating a local electric field induced silicon photodetector as claimed in any one of claims 1 to 8, the method comprising:
forming a plurality of first grooves arranged at intervals on the absorption layer;
doping within the first recess to form a modulation doped region, wherein the modulation doped region is configured to induce photon-generated carrier momentum of the absorber layer and collect carriers;
forming a first ohmic electrode layer on the absorption layer having the modulation doping region;
and forming a second ohmic electrode layer on the side of the absorption layer, which faces away from the first ohmic electrode.
10. The method according to claim 9, wherein the forming a first ohmic electrode layer on the absorption layer having the modulation doped region comprises:
forming an anti-reflection layer on the absorption layer with the modulation doping area;
forming a second groove on the anti-reflection layer;
and forming the first ohmic electrode layer in the second groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211219235.0A CN115295647B (en) | 2022-10-08 | 2022-10-08 | Local electric field induced silicon photoelectric detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211219235.0A CN115295647B (en) | 2022-10-08 | 2022-10-08 | Local electric field induced silicon photoelectric detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115295647A true CN115295647A (en) | 2022-11-04 |
| CN115295647B CN115295647B (en) | 2022-12-16 |
Family
ID=83833584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211219235.0A Active CN115295647B (en) | 2022-10-08 | 2022-10-08 | Local electric field induced silicon photoelectric detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115295647B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07302928A (en) * | 1994-05-09 | 1995-11-14 | Mitsubishi Electric Corp | Semiconductor photodetector, semiconductor photodetector array, and image processing device and method |
| CN101203962A (en) * | 2005-04-20 | 2008-06-18 | 哈恩-迈特纳研究所柏林有限公司 | Heterocontact solar cell with inverted geometry of its layer structure |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
| CN103904152A (en) * | 2012-12-27 | 2014-07-02 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method thereof and radiation detector |
| CN113871405A (en) * | 2020-06-30 | 2021-12-31 | 北京师范大学 | Position sensitive silicon photomultiplier detector |
-
2022
- 2022-10-08 CN CN202211219235.0A patent/CN115295647B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07302928A (en) * | 1994-05-09 | 1995-11-14 | Mitsubishi Electric Corp | Semiconductor photodetector, semiconductor photodetector array, and image processing device and method |
| CN101203962A (en) * | 2005-04-20 | 2008-06-18 | 哈恩-迈特纳研究所柏林有限公司 | Heterocontact solar cell with inverted geometry of its layer structure |
| CN103904152A (en) * | 2012-12-27 | 2014-07-02 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method thereof and radiation detector |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
| CN113871405A (en) * | 2020-06-30 | 2021-12-31 | 北京师范大学 | Position sensitive silicon photomultiplier detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115295647B (en) | 2022-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9929291B2 (en) | Photo-detector having plasmonic resonance and photon crystal thermal noise suppression | |
| US20160284744A1 (en) | Photodiode array | |
| US20140319464A1 (en) | Light receiving element and method for manufacturing same | |
| US9882070B2 (en) | Photodetector structures and manufacturing the same | |
| JP4856031B2 (en) | Avalanche photodiode | |
| JP2019036663A (en) | Photo detector | |
| US8592863B2 (en) | Photodetector with internal gain and detector comprising an array of such photodetectors | |
| Guo et al. | High-responsivity Si photodiodes at 1060 nm in standard CMOS technology | |
| CN117239000B (en) | Avalanche photodiode, manufacturing method thereof and single photon detector | |
| CN115295647B (en) | Local electric field induced silicon photoelectric detector and preparation method thereof | |
| CN116598369B (en) | Low-noise single photon detector and preparation method thereof | |
| Piotrowski et al. | Stacked multijunction photodetectors of long-wavelength radiation | |
| RU2488916C1 (en) | Semiconductor infrared detector | |
| US11282873B2 (en) | Photodetector and imaging device | |
| US9224891B2 (en) | Photodetection device | |
| US7015453B2 (en) | Photodetector | |
| CN115224138A (en) | Horizontal pull-through type germanium-silicon avalanche photodetector | |
| CA1121491A (en) | High responsivity avalanche photodetector and method of realizing same | |
| KR102194369B1 (en) | Evaluation Method of Depth Profile of Effective Diffusion Length of the Minority Carrier in Graded Bandgap Solar Cell | |
| EP1833095B1 (en) | Photo diode having reduced dark current | |
| CN113659016A (en) | Photoelectric detector | |
| JP5858790B2 (en) | Method for making a photodiode | |
| RU2240631C1 (en) | Photodetector | |
| KR102377319B1 (en) | Photodetector device | |
| US10128399B1 (en) | Lateral-effect position-sensing detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |