CN115290575A

CN115290575A - Method and device for measuring film property parameters

Info

Publication number: CN115290575A
Application number: CN202210944179.0A
Authority: CN
Inventors: 郭鑫; 朱珠
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2022-08-05
Filing date: 2022-08-05
Publication date: 2022-11-04

Abstract

The present disclosure discloses a method and an apparatus for measuring film property parameters, which are used to improve the efficiency and accuracy of measuring film property parameters of optical films in semiconductor products. The method for measuring the film property parameters comprises the following steps: obtaining a measurement result of a semiconductor product at a front layer film property parameter measurement station, wherein the measurement result comprises: when the semiconductor product is positioned at the front layer film property parameter measuring station, measuring results generated by measuring film property parameters of the optical film layer are obtained; and at the film property parameter measuring station of the current layer, keeping the measuring result of the previous layer of film unchanged, and measuring the film property parameters aiming at the newly added optical film layer of the current layer.

Description

Method and device for measuring film property parameters

Technical Field

The present disclosure relates to the field of semiconductor technologies, and in particular, to a method and an apparatus for measuring a property parameter of a thin film.

Background

In the prior art, after each optical film (also referred to as an optical film layer) in a semiconductor product is manufactured, a separate station is used to measure the film property parameters. Specifically, after any optical film is prepared, the optical film is measured by using a measurement method based on an optical technology, and the refractive index (n), the absorption coefficient (k), the film thickness (T), and other film property parameters of the optical film can be obtained by using different polarized light measurements.

Disclosure of Invention

The embodiment of the disclosure provides a method and a device for measuring film property parameters, which are used for improving the efficiency and accuracy of measuring the film property parameters of an optical film layer in a semiconductor product.

The method for measuring the film property parameters provided by the embodiment of the disclosure comprises the following steps:

obtaining a measurement result of a semiconductor product at a front layer film property parameter measurement station, wherein the measurement result comprises: when the semiconductor product is positioned at the front layer film property parameter measuring station, measuring results generated by measuring film property parameters of the optical film layer are obtained;

and at the current-layer film property parameter measuring station, keeping the measuring result of the previous-layer film unchanged, and measuring the film property parameters aiming at the newly added current-layer optical film layer.

By the method, the measurement result of the semiconductor product at the front layer film property parameter measurement station is obtained, and the measurement result comprises the following steps: when the semiconductor product is positioned at the front layer film property parameter measuring station, the optical film layer carries out film property parameter measurement to generate a measuring result, the measuring result of the front layer film is kept unchanged at the current layer film property parameter measuring station, and the film property parameter is measured aiming at the newly added current layer optical film layer, so that the measuring efficiency of the film property parameter of the optical film layer in the semiconductor product can be improved, and the accuracy of the measuring result is improved.

In some embodiments, the film property parameter measurement station performs measurement of the film property parameter by using a spectral fitting method.

In some embodiments, the measuring of the film property parameter for the newly added present optical film layer includes: acquiring the real spectrum of the current film layer through the film property parameter measuring station of the current film layer; acquiring a theoretical spectrum of a preset film layer; and performing spectrum fitting on the theoretical spectrum and the real spectrum to determine a measurement result of the film property parameters of the newly added optical film layer.

In some embodiments, a fitting threshold is set, and when the similarity between the real spectrum and the theoretical spectrum exceeds the threshold, the film property parameter corresponding to the theoretical spectrum is taken as the film property parameter of the optical film layer.

In some embodiments, in the process of performing the spectrum fitting on the current optical film layer, the spectrum fitting result of the previous film layer is fed back to the current film property parameter measuring station, and only the newly added film property parameters of the current optical film layer are subjected to floating fitting.

In some embodiments, the film property parameters include: the thickness of the optical film layer, the refractive index and/or the absorption coefficient of the optical film layer.

In some embodiments, in the floating fitting process, the refractive index and the absorption coefficient of the present optical film layer are fixed, and the thickness of the present optical film layer is fitted.

In some embodiments, different film properties refer to measurement stations, and the measurement locations for the semiconductor products are the same.

For example, different stations measure the same position on the same wafer, so that interference factors affecting the accuracy of the measurement result can be further eliminated.

In some embodiments, the same machine is used for measuring the film property parameters of different films.

Therefore, interference factors influencing the accuracy of the measurement result can be further eliminated, and deviation of the measurement result caused by difference among the machine stations is avoided.

In some embodiments, the semiconductor product comprises a plurality of thin films, at least two of the thin films having the same property parameter, or at least two of the thin films having property parameters differing by a value within a predetermined range.

Another embodiment of the present disclosure provides a device for measuring a property parameter of a thin film, including:

the measuring unit comprises a film property parameter measuring station, and the measuring station acquires the spectrum information of the film;

an analysis unit that derives a property parameter of the thin film from the spectral information;

the feedback unit is used for transmitting the measurement result of the property parameter of the front layer film to the property parameter measurement site of the current layer film;

and the control unit is used for inputting the measurement result of the previous layer of film into the analysis unit at the local layer of film property parameter measurement station, and measuring the film property parameters aiming at the newly added local layer of optical film layer.

In some embodiments, the measurement unit comprises a positioning module, an emission module and a receiving module, wherein the positioning module is used for positioning the same measurement site in different film layers, the emission module provides an excitation light source, and the receiving module is used for collecting spectral information.

In some embodiments, the analysis unit includes a storage module and a fitting module, the storage module is configured to store a theoretical spectrum of a preset film layer and a real spectrum of an actual film layer collected by the measurement unit; and the fitting module is used for matching and fitting the theoretical spectrum and the real spectrum of the actual film layer to obtain the film property parameters of the actual film layer.

Another embodiment of the present disclosure provides a system for measuring a property parameter of a thin film, which includes a memory and a processor, wherein the memory is used for storing program instructions, and the processor is used for calling the program instructions stored in the memory and executing any one of the above methods according to the obtained program.

Furthermore, according to an embodiment, for example, a computer program product for a computer is provided, which comprises software code portions for performing the steps of the method as defined above, when said product is run on a computer. The computer program product may include a computer-readable medium having software code portions stored thereon. Further, the computer program product may be directly loaded into an internal memory of the computer and/or transmitted via a network through at least one of an upload process, a download process, and a push process.

Another embodiment of the present disclosure provides a computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform any one of the methods described above.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without inventive efforts.

FIG. 1 is a schematic flow chart illustrating a method for measuring a film property parameter in a semiconductor product according to an embodiment of the present disclosure;

FIGS. 2 a-2 d are schematic diagrams of a spectrum fitting process provided by an embodiment of the disclosure;

FIG. 3 is a schematic diagram of a semiconductor product including three optical film layers provided by an embodiment of the present disclosure;

FIG. 4 is a schematic diagram illustrating a measurement performed by each station on a newly added optical film according to an embodiment of the present disclosure;

FIG. 5 is a schematic view of a measuring apparatus for measuring film property parameters of a semiconductor product according to an embodiment of the present disclosure;

FIG. 6 is a schematic structural diagram illustrating an apparatus for measuring film property parameters of a semiconductor product according to an embodiment of the present disclosure;

fig. 7 is a schematic structural diagram of an apparatus for measuring film property parameters in a semiconductor product according to an embodiment of the present disclosure.

Detailed Description

The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only some embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.

The method and the device are based on the same application concept, and because the principles of solving the problems of the method and the device are similar, the implementation of the device and the method can be mutually referred, and repeated parts are not described again.

The terms "first," "second," and the like in the description and claims of the embodiments of the disclosure and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be implemented in other sequences than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The following examples and embodiments are to be understood as merely illustrative examples. While this specification may refer to "an," "one," or "some" example or embodiment in several places, this does not imply that each such reference relates to the same example or embodiment, nor that the feature only applies to a single example or embodiment. Individual features of different embodiments may also be combined to provide further embodiments. Furthermore, terms such as "comprising" and "comprises" should be understood as not limiting the described embodiments to consist of only those features that have been mentioned; such examples and embodiments may also include features, structures, elements, modules, etc. not specifically mentioned.

Various embodiments of the present disclosure are described in detail below with reference to the drawings attached hereto. It should be noted that the display sequence of the embodiment of the present disclosure only represents the sequence of the embodiment, and does not represent the merits of the technical solutions provided by the embodiments.

Referring to fig. 1, a method for measuring a property parameter of a thin film according to an embodiment of the present disclosure includes:

s101, obtaining a measurement result of a semiconductor product at a front layer film property parameter measurement station, wherein the measurement result comprises: when the semiconductor product is positioned at the front layer film property parameter measuring station, measuring results generated by measuring film property parameters of the optical film layer are obtained;

wherein the semiconductor product, such as a wafer (wafer);

the optical film layer, for example: oxide layer (Oxide), silicon nitride (SIN) film layer;

the film property parameter measuring station, such as a Thickness (THK) station;

in some embodiments, the film property parameters include: thickness of the optical film layer (THK).

In some embodiments, the film property parameters further include: the refractive index (n) and/or the absorption coefficient (k) of the optical film layer.

After each optical film layer in a semiconductor product is manufactured, a single film property parameter measuring station is used for measuring the film property parameters.

For example, after any optical film is prepared, the refractive index (n), the absorption coefficient (k), the film thickness (T), and other film property parameters of the optical film are obtained by measuring the optical film by using different polarized light measurement samples in an optical technology-based measurement mode.

S102, at the local layer film property parameter measuring station, keeping the measuring result of the front layer film unchanged, and measuring the film property parameters aiming at the newly added local layer optical film layer.

In some embodiments, the film property parameter measurement station uses a spectral fitting method to perform the measurement of the film property parameter.

In some embodiments, the measuring the film property parameters for the newly added present optical film layer includes: acquiring the real spectrum of the current film layer through the film property parameter measuring station of the current film layer; acquiring a theoretical spectrum of a preset film layer; and performing spectrum fitting on the theoretical spectrum and the real spectrum to determine a measurement result of the film property parameters of the newly added optical film layer.

In some embodiments, in the process of performing the spectrum fitting on the current layer of optical film, the spectrum fitting result of the previous layer of film is fed back to the current layer of film property parameter measuring station, and only the newly added film property parameters of the current layer of optical film are subjected to floating fitting.

Generally, after the material of the optical film layer is fixed, the refractive index and the absorption coefficient of the optical film layer can be substantially determined, and therefore, in some embodiments, in the floating fitting process, the refractive index and the absorption coefficient of the optical film layer are fixed, and the thickness of the optical film layer is fitted. Therefore, the fitting efficiency can be further improved, namely the measurement efficiency of the film property parameters is improved.

The spectrum fitting method is shown in fig. 2a to 2d, where fig. 2a is a real spectrum measured by a machine for a semiconductor product formed with a multilayer optical film layer, fig. 2b is a theoretical spectrum (which may also be referred to as a standard spectrum) fit by stacking optical films of different materials in advance, that is, forming the multilayer optical film layer in the same way, and the spectrum fitting theory is to float some of the film property parameters in fig. 2b, as shown in fig. 2c, so that the theoretical spectrum is continuously close to the real spectrum, and when the theoretical spectrum and the real spectrum are fitted to a very good degree (for example, the last graph), as shown in fig. 2d, it is considered that the film property parameters (for example, the film thickness) corresponding to the theoretical spectrum are close to the real parameter values of the multilayer optical film layer in the semiconductor product, and then the film property parameters (for example, the film thickness, etc.) of the multilayer optical film layer in the semiconductor product are obtained.

In the actual measurement process, the stacking condition of the film layers can be set according to the actual condition, including: the refractive index (n) and the absorption coefficient (k) of each film layer are related to Cos Δ, Δ is the phase difference between S and P components in incident light on the surface of the film layer, the film thickness (T) is related to Tan ψ, tan ψ is the amplitude ratio of P and S components of reflected light, and ψ is the angle between the polarization direction of reflected light and the S direction. Therefore, by establishing a variation curve of Cos Δ with respect to wavelength and a variation curve of Tan ψ with respect to wavelength, a theoretical spectrum can be formed. The most reliable film property parameters (T, n, k) can be found by best fit results (GOF) by matching the actual measured real spectrum with the floating variation of the relevant parameters corresponding to the theoretical spectrum.

As shown in fig. 3, when the semiconductor product is a wafer (wafer) having a first optical film layer 301, a second optical film layer 302, and a third optical film layer 303, the wafer (wafer) having the three layers of films is subjected to spectrum fitting when measured by the THK machine, and the film property parameters (including refractive index (n), absorption coefficient (k), and film thickness (T)) of the three layers of films are all floated (flowing) to achieve the best fitting result, it can be seen that, for the three layers, a total of 9 parameters are involved in the spectrum fitting process, but actually, the previous two layers (the first optical film layer 301 and the second optical film layer 302) have measured their respective film property parameters at the previous film property parameter measuring station, so the spectrum fitting process is too complicated, and the fitting of some unnecessary parameters (the film property parameters of the first optical film layer 301 and the second optical film layer 302) is repeated, so that the efficiency is low, and the accuracy of the measurement of the current layer (third optical film layer 303) is also low. For example, when there are 3 optical layers in total, the machine receives the spectrum without layering, and receives the spectrum information of all the layers, if the properties of the thin film materials of the second optical layer 302 and the third optical layer 303 are close, it is difficult to separate the second optical layer 302 from the third optical layer 303 during fitting, and the measurement result for the third optical layer 303 naturally has a deviation, i.e., the accuracy is low.

Therefore, in the embodiment of the present disclosure, referring to fig. 4, after the measurement of the first optical film 301 by the first station performing the film property parameter measurement is finished, the measurement result of the first optical film 301 is transmitted to the second station performing the film property parameter measurement; at a second station for measuring the film property parameters, keeping the measurement result of the first optical film layer 301 unchanged, measuring the film property parameters only for a currently added optical film layer (i.e., the second optical film layer 302), namely, only floating the second optical film layer 302, so as to achieve the best fitting effect, obtaining the second optical film layer 302, and finally transmitting the obtained measurement result of the second optical film layer 302 and the unchanged measurement result of the first optical film layer 301 to a third station for measuring the film property parameters; similarly, at the third station for measuring the film property parameters, the measurement result of the first optical film layer 301 and the measurement result of the second optical film layer 302 are kept unchanged, and the film property parameters are measured only for the currently added optical film layer (i.e., the third optical film layer 303), i.e., only the third optical film layer 303 is flowed, so as to achieve the best fitting effect, and obtain the measurement result of the third optical film layer 302. Subsequently, if a fourth film layer still exists, the processing is performed in the same manner by the same method, and details are not repeated.

The first station, the second station, and the third station for measuring the film property parameters may also perform measurement on all optical film layers, but the measurement may be inaccurate, for example, the measurement result of the first station on the first optical film layer 301 is 5nm, and the measurement result of the second station on the first optical film layer 301 is 5.5nm, which is because the measurement result of the first optical film layer 301 measured by the first station is not fixed, the second station also fits the first optical film layer 301 in the measurement process, and the third station is the same. However, if only the newly added optical film is measured at the same site, the measurement result is more accurate because the spectral information is relatively single (only the spectral information of the newly added optical film exists).

Therefore, in the embodiment of the disclosure, after the second station receives the measurement result of the first station for the first optical film layer 301, the film property parameters (including the film thickness) of the first optical film layer 301 are fixed in the fitting process, and only the film property parameters of the second optical film layer 302 are floated, so that the spectral information is relatively single, and the measurement result is more accurate.

In some embodiments, it may be coupled with a Material Management (MM) module, which is a device for transmitting metrology results between different film property parameter measurement stations. That is, the MM module may transmit the measurement result data of the first station from the first station to the second station, i.e., transmit the measurement result of the current station to the next station.

In some embodiments, the wafer and the position (position) measured at different stations are controlled to be the same, i.e. the same position on the same wafer is measured at different stations, so as to eliminate the interference factors affecting the measurement result as much as possible, wherein the position refers to the position of measurement, i.e. the position where the light is incident.

In some embodiments, the same machine (i.e., the same station) may be bound to measure the film property parameters for different key layers (i.e., for different preset film layers), so as to ensure more reliable data. Because some processes are critical, different optical films need to be measured on the same machine, and because it is impossible to completely identify the same machine by hundreds, for example, machine a and machine B are both of the same type, when the same wafer is measured on the two machines, the result of machine a is 5nm, and the result of machine B is 5.05nm, which results in the difference between the machines.

In some embodiments, the semiconductor product comprises a plurality of films, at least two of which have the same or similar property parameters (i.e., at least two of the films have property parameters that differ in value by within a predetermined range).

The following describes an apparatus or device provided in an embodiment of the present disclosure, where technical features the same as or corresponding to those described in the foregoing method are explained or illustrated, and are not described in detail later.

Referring to fig. 5, another embodiment of the present disclosure provides a measurement system for a film property parameter (for example, a machine apparatus in the film property parameter measurement station, etc.), which includes a memory 520 and a processor 500, wherein the memory 520 is used for storing program instructions, and the processor 500 is used for calling the program instructions stored in the memory 520 to execute the following steps according to the obtained program:

and at the film property parameter measuring station of the current layer, keeping the measuring result of the previous layer of film unchanged, and measuring the film property parameters aiming at the newly added optical film layer of the current layer.

In some embodiments, the film property parameters include: thickness of the optical film layer, refractive index and/or absorption coefficient of the optical film layer.

In some embodiments, different film properties reference measurement stations, measurement locations for the semiconductor product are the same.

Wherein in fig. 5, the bus architecture may include any number of interconnected buses and bridges, with one or more processors, represented by processor 500, and various circuits, represented by memory 520, being linked together. The bus architecture may also link together various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. The bus interface provides an interface. The transceiver 510 may be a plurality of elements including a transmitter and a receiver that provide a means for communicating with various other apparatus over a transmission medium. The processor 500 is responsible for managing the bus architecture and general processing, and the memory 520 may store data used by the processor 500 in performing operations.

The processor 500 may be a Central Processing Unit (CPU), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), or a Complex Programmable Logic Device (CPLD).

Referring to fig. 6, another embodiment of the present disclosure provides an apparatus for measuring a film property parameter in a semiconductor product, which includes a memory 620 and a processor 600, wherein the memory 620 is used for storing program instructions, and the processor 600 is used for calling the program instructions stored in the memory 620 to execute any one of the above methods according to an obtained program, which is not described herein again.

In some embodiments, the apparatus for measuring film property parameters in semiconductor products further comprises a transceiver 610 for receiving and transmitting data under the control of the processor 600.

Where in fig. 6, the bus architecture may include any number of interconnected buses and bridges, with various circuits being linked together, particularly one or more processors represented by processor 600 and memory represented by memory 620. The bus architecture may also link together various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. The bus interface provides an interface. The transceiver 610 may be a number of elements including a transmitter and a receiver that provide a means for communicating with various other apparatus over a transmission medium.

In some embodiments, the apparatus for measuring film property parameters in semiconductor products further comprises a user interface 630, wherein the user interface 630 may be an interface capable of connecting a desired device externally, including but not limited to a keypad, a display, a speaker, a microphone, a joystick, etc.

The processor 600 is responsible for managing the bus architecture and general processing, and the memory 620 may store data used by the processor 600 in performing operations.

In some embodiments, the processor 600 may be a CPU (central processing unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or a CPLD (Complex Programmable Logic Device).

Referring to fig. 7, another embodiment of the present disclosure provides an apparatus for measuring a film property parameter in a semiconductor product, including:

the measuring unit 701, the measuring unit 701 includes a film property parameter measuring station, and the measuring station collects the spectrum information of the film;

an analysis unit 702, wherein the analysis unit 702 obtains the property parameters of the thin film according to the spectrum information;

a feedback unit 703, where the feedback unit 703 is configured to transmit a measurement result of a property parameter of a previous layer of the thin film to a local layer of the thin film property parameter measurement station;

a control unit 704, where the control unit 704 is configured to input the measurement result of the previous layer of film into the analysis unit 702 at the local layer of film property parameter measurement station, and measure the film property parameter for the newly added local layer of optical film.

In some embodiments, the measurement unit 701 comprises a positioning module, an emission module and a receiving module (not shown), the positioning module is used for positioning the same measurement site in different film layers, the emission module provides an excitation light source, and the receiving module is used for collecting spectral information.

In some embodiments, the analysis unit 702 comprises a storage module and a fitting module (not shown in the figures), the storage module is used for storing a theoretical spectrum of a preset film layer and a real spectrum of an actual film layer collected by the measurement unit 701; and the fitting module is used for matching and fitting the theoretical spectrum and the real spectrum of the actual film layer to obtain the film property parameters of the actual film layer.

It should be noted that, the division of the units in the embodiment of the present disclosure is schematic, and is only one logic function division, and there may be another division manner in actual implementation. In addition, functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit may be implemented in the form of hardware, or may also be implemented in the form of a software functional unit.

The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present disclosure may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, a network device, or the like) or a processor (processor) to execute all or part of the steps of the method according to the embodiments of the present disclosure. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.

The disclosed embodiments provide a computing device, which may be specifically a desktop computer, a portable computer, a smartphone, a tablet computer, a Personal Digital Assistant (PDA), and the like. The computing device may include a Central Processing Unit (CPU), memory, input/output devices, etc., the input devices may include a keyboard, mouse, touch screen, etc., and the output devices may include a Display device, such as a Liquid Crystal Display (LCD), a Cathode Ray Tube (CRT), etc.

The memory may include Read Only Memory (ROM) and Random Access Memory (RAM), and provides the processor with program instructions and data stored in the memory. In the embodiments of the present disclosure, the memory may be used to store a program of any one of the methods provided by the embodiments of the present disclosure.

The processor is used for executing any one of the methods provided by the embodiments of the present disclosure according to the obtained program instructions by calling the program instructions stored in the memory.

Embodiments of the present disclosure also provide a computer program product or computer program comprising computer instructions stored in a computer readable storage medium. The processor of the computer device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions to cause the computer device to perform the method of any of the above embodiments. The program product may employ any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. A readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples (a non-exhaustive list) of the readable storage medium include: an electrical connection having one or more wires, a portable disk, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

Embodiments of the present disclosure provide a computer-readable storage medium for storing computer program instructions for an apparatus provided by embodiments of the present disclosure, which includes a program for executing any one of the methods provided by embodiments of the present disclosure. The computer-readable storage medium may be a non-transitory computer-readable medium.

The computer-readable storage medium can be any available medium or data storage device that can be accessed by a computer, including but not limited to magnetic memory (e.g., floppy disks, hard disks, magnetic tape, magneto-optical disks (MOs), etc.), optical memory (e.g., CDs, DVDs, BDs, HVDs, etc.), and semiconductor memory (e.g., ROMs, EPROMs, EEPROMs, non-volatile memories (NAND FLASH), solid State Disks (SSDs)), etc.

It should be understood that:

the access technology via which entities in the communication network communicate traffic to and from may be any suitable current or future technology, such as WLAN (wireless local access network), wiMAX (worldwide interoperability for microwave access), LTE-a, 5G, bluetooth, infrared, etc. may be used; in addition, embodiments may also apply wired technologies, e.g. IP-based access technologies, such as wired networks or fixed lines.

Embodiments suitable for implementation as software code or as part thereof and for operation using a processor or processing functionality are software code independent and may be specified using any known or future developed programming language, such as a high level programming language, such as objective-C, C + +, C #, java, python, javascript, other scripting language, etc., or a low level programming language, such as a machine language or an assembler.

The implementation of the embodiments is hardware independent and may be implemented using any known or future developed hardware technology or any mixture thereof, such as a microprocessor or CPU (central processing unit), MOS (metal oxide semiconductor), CMOS (complementary MOS), biMOS (bipolar MOS), biCMOS (bipolar CMOS), ECL (emitter coupled logic) and/or TTL (transistor-transistor logic).

Embodiments may be implemented as separate devices, apparatus, units, components or functions or in a distributed manner, e.g., one or more processors or processing functions may be used or shared in a process or one or more processing segments or processing portions may be used and shared in a process, where a physical processor or more than one physical processor may be used to implement one or more processing portions dedicated to a particular process as described.

The apparatus may be implemented by a semiconductor chip, a chipset, or a (hardware) module comprising such a chip or chipset.

Embodiments may also be implemented as any combination of hardware and software, such as ASIC (application specific IC (integrated circuit)) components, FPGA (field programmable gate array) or CPLD (complex programmable logic device) components, or DSP (digital signal processor) components.

Embodiments may also be implemented as a computer program product, comprising a computer usable medium having a computer readable program code embodied therein, the computer readable program code adapted to perform a process as described in the embodiments, wherein the computer usable medium may be a non-transitory medium.

As will be appreciated by one skilled in the art, embodiments of the present disclosure may be provided as a method, system, or computer program product. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.

The present disclosure is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the disclosure. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

It will be apparent to those skilled in the art that various changes and modifications can be made in the present disclosure without departing from the spirit and scope of the disclosure. Thus, if such modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include such modifications and variations as well.

Claims

1. A method for measuring a property parameter of a thin film, the method comprising:

2. The method of claim 1, wherein the film property parameter measurement station uses spectral fitting to measure the film property parameter.

3. The method of claim 2, wherein the measuring the film property parameters for the added layer of the optical film comprises: acquiring the real spectrum of the current film layer through the film property parameter measuring station of the current film layer; and acquiring a theoretical spectrum of a preset film layer; and performing spectrum fitting on the theoretical spectrum and the real spectrum to determine a measurement result of the film property parameters of the newly added optical film layer.

4. The method according to claim 3, wherein a fitting threshold is set, and when the similarity between the real spectrum and the theoretical spectrum exceeds the threshold, the film property parameter corresponding to the theoretical spectrum is used as the film property parameter of the optical film layer.

5. The method according to claim 2 or 3, wherein in the process of performing the spectrum fitting on the current layer of optical film layer, the spectrum fitting result of the previous layer of film is fed back to the current layer of film property parameter measuring station, and only the newly added film property parameters of the current layer of optical film layer are subjected to floating fitting.

6. The method of claim 5, wherein the film property parameters comprise: thickness of the optical film layer, refractive index and/or absorption coefficient of the optical film layer.

7. The method of claim 6, wherein in the floating fitting process, the refractive index and the absorption coefficient of the layer of optical film are fixed, and the thickness of the layer of optical film is fitted.

8. The method of claim 1, wherein different film property parameter measurement stations have the same measurement location for the semiconductor product.

9. The method of claim 1, wherein the same tool is used for measuring the film property parameters of different films.

10. The method of claim 1, wherein the semiconductor product comprises a plurality of films, wherein at least two of the films have the same property parameter, or wherein at least two of the films have property parameters that differ in value within a predetermined range.

11. An apparatus for measuring a property parameter of a thin film, comprising:

the measuring unit comprises a film property parameter measuring station, and the measuring station acquires spectral information of the film;

and the control unit is used for inputting the measurement result of the front layer film into the analysis unit at the local layer film property parameter measurement station, and measuring the film property parameters aiming at the newly added local layer optical film layer.

12. The apparatus of claim 11, wherein the measurement unit comprises a positioning module, an emitting module and a receiving module, the positioning module is used for positioning the same measurement site in different layers, the emitting module provides an excitation light source, and the receiving module is used for collecting spectral information.

13. The apparatus of claim 11, wherein the analysis unit comprises a storage module and a fitting module, the storage module is configured to store a theoretical spectrum of a predetermined film layer and a real spectrum of an actual film layer collected by the measurement unit; and the fitting module is used for matching and fitting the theoretical spectrum and the real spectrum of the actual film layer to obtain the film property parameters of the actual film layer.

14. A system for measuring a property parameter of a thin film, the system comprising:

a memory for storing program instructions;

a processor for calling program instructions stored in said memory to execute the method of any one of claims 1 to 10 in accordance with the obtained program.

15. A computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform the method of any one of claims 1 to 10.