CN115290246A - Cross-coupled double-chip pressure sensor - Google Patents
Cross-coupled double-chip pressure sensor Download PDFInfo
- Publication number
- CN115290246A CN115290246A CN202210308962.8A CN202210308962A CN115290246A CN 115290246 A CN115290246 A CN 115290246A CN 202210308962 A CN202210308962 A CN 202210308962A CN 115290246 A CN115290246 A CN 115290246A
- Authority
- CN
- China
- Prior art keywords
- resistor
- sub
- cavity
- sensing
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000002775 capsule Substances 0.000 claims abstract description 30
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 49
- 239000010410 layer Substances 0.000 claims description 37
- 239000012790 adhesive layer Substances 0.000 claims description 31
- 239000003365 glass fiber Substances 0.000 claims description 26
- 239000000565 sealant Substances 0.000 claims description 18
- 230000009977 dual effect Effects 0.000 claims description 16
- 238000005192 partition Methods 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 13
- 229920000647 polyepoxide Polymers 0.000 claims description 13
- 238000006880 cross-coupling reaction Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 8
- -1 polybutylene terephthalate Polymers 0.000 claims description 8
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 claims description 6
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 6
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 2
- 239000012945 sealing adhesive Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
- G01L7/082—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type construction or mounting of diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
- G01L9/045—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges with electric temperature compensating means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a cross-coupled dual-chip pressure sensor, comprising: the first capsule and the second capsule are respectively positioned on two sides of the substrate, the inner cavity of the first capsule comprises a first sub cavity and a second sub cavity which are isolated, the inner cavity of the second capsule comprises a third sub cavity and a fourth sub cavity which are isolated, the first sub cavity and the third sub cavity are oppositely arranged, the second sub cavity and the fourth sub cavity are oppositely arranged, the second sub cavity is communicated with the third sub cavity through a first air source coupling hole in the substrate, and the fourth sub cavity is communicated with the first sub cavity through a second air source coupling hole in the substrate; fix first pressure sensing chip and the second pressure sensing chip at base plate side surface, first pressure sensing chip is located first sub-chamber, and the second pressure sensing chip is located the second sub-chamber. The cross-coupled dual-chip pressure sensor has high sensitivity.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a cross-coupled double-chip pressure sensor.
Background
The MEMS (micro electro mechanical system) pressure sensor is a miniature sensor which is developed at the earliest and has a great market occupation rate, and the application field covers all aspects of daily production and life of people at present. And the core device in the MEMS sensor is a MEMS sensitive chip, and the MEMS sensitive chip comprises a piezoresistive MEMS pressure sensitive chip.
The piezoresistive MEMS pressure sensitive chip is prepared based on piezoresistive effect, and has the advantages of small volume and good consistency of batch production, and is prepared by adopting a semiconductor process. The piezoresistive effect means that the resistance value of the resistor changes under stress. The output voltage change of the piezoresistive MEMS pressure sensitive chip generated under the unit pressure change is the sensitivity. Sensitivity is the most basic performance parameter of a MEMS sensitive chip, and generally, the higher the sensitivity, the better the chip performance. With the development of sensor technology, the application range of the sensor is wider and wider, and the sensor can be applied to severe occasions such as high temperature, high pressure, corrosivity and the like. The performance of a conventional piezoresistive MEMS sensitive chip is greatly affected by temperature, because the effectiveness of piezoresistive effect changes with temperature, resulting in significant sensitivity change, which affects the calibration of the output of the chip to pressure.
Therefore, the sensitivity of the MEMS sensor in the prior art is low.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to solve the problem of low sensitivity of the MEMS sensor in the prior art.
The invention provides a cross-coupled dual-chip pressure sensor, comprising: a substrate; the first capsule and the second capsule are respectively positioned on two sides of the substrate, the inner cavity of the first capsule comprises a first sub-cavity and a second sub-cavity which are separated, the inner cavity of the second capsule comprises a third sub-cavity and a fourth sub-cavity which are separated, the first sub-cavity is opposite to the third sub-cavity, the second sub-cavity is opposite to the fourth sub-cavity, the second sub-cavity is communicated with the third sub-cavity through a first gas source coupling hole in the substrate, and the fourth sub-cavity is communicated with the first sub-cavity through a second gas source coupling hole in the substrate; the first pressure sensing chip is positioned in the first sub-cavity, a back cavity of the first pressure sensing chip is communicated with the third sub-cavity through a first communication port in the substrate, the second pressure sensing chip is positioned in the second sub-cavity, and a back cavity of the second pressure sensing chip is communicated with the fourth sub-cavity through a second communication port in the substrate, so that a first air path formed between the surface of the first pressure sensing chip and the back cavity of the second pressure sensing chip and a second air path formed between the surface of the second pressure sensing chip and the back cavity of the first pressure sensing chip are in cross coupling; the first output end of the first pressure sensing chip is electrically connected with the second output end of the second pressure sensing chip, and the second output end of the first pressure sensing chip is electrically connected with the first output end of the second pressure sensing chip, so that the first pressure sensing chip and the second pressure sensing chip realize circuit cross coupling.
Optionally, a first partition plate is arranged in the cavity of the first enclosure, and the first sub-cavity and the second sub-cavity are respectively located on two sides of the first partition plate; the second sub-cavity and the fourth sub-cavity are respectively positioned at two sides of the second clapboard.
Optionally, the material of the first partition plate and the first capsule includes ceramic, epoxy resin, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber, and the material of the second partition plate and the second capsule includes ceramic, epoxy resin, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber.
Optionally, the first separator has a thickness of 0.5mm to 1mm, and the second separator has a thickness of 0.5mm to 1mm.
Optionally, the projection of the first partition board on the substrate surface is divided into a first sub-area, a second sub-area and a third sub-area which are connected in sequence, the projection of the second partition board on the substrate surface is divided into a fourth sub-area, a fifth sub-area and a sixth sub-area which are connected in sequence, the second sub-area and the fifth sub-area are overlapped, the first sub-area and the fourth sub-area are symmetrically arranged about the first central axis of the substrate, and the third sub-area and the sixth sub-area are symmetrically arranged about the first central axis of the substrate; the first central axis is parallel to the extension direction of the second and fifth sub-regions.
Optionally, the substrate has a first surface and a second surface which are oppositely arranged, the first surface is provided with a first sinking groove, and the second surface is provided with a second sinking groove; the bottom surface of the first partition plate is embedded into the first sinking groove; the bottom surface of the second clapboard is embedded into the second sinking groove.
Optionally, the method further includes: the first sealing adhesive layer is positioned in the first sinking groove at the bottom of the first clapboard; and the second sealant layer is positioned in the second sinking groove at the bottom of the second clapboard.
Optionally, the hardness of each of the first sealant layer and the second sealant layer is shore D75-shore D80.
Optionally, the material of the first sealant layer and the second sealant layer includes silicon gel or epoxy resin.
Optionally, the first encapsulant is bonded to the substrate by a first glue layer; the second encapsulant is bonded to the substrate by a second glue layer.
Optionally, the first adhesive layer and the second adhesive layer have a shore hardness of D65 to shore hardness of D70.
Optionally, the material of the first adhesive layer and the second adhesive layer includes silicone or epoxy resin.
Optionally, the first pressure sensing chip is bonded to the substrate through a third adhesive layer, and the second pressure sensing chip is bonded to the substrate through a fourth adhesive layer.
Optionally, the hardness of each of the third adhesive layer and the fourth adhesive layer is shore a 38-shore a42.
Optionally, the third adhesive layer and the fourth adhesive layer are made of a material including silicone rubber or epoxy resin.
Optionally, the method further includes: a first inlet pipe and a second inlet pipe; the first air inlet pipe is communicated with the first sub-cavity, and the second air inlet pipe is communicated with the second sub-cavity; or the first air inlet pipe is communicated with the first sub-cavity, and the second air inlet pipe is communicated with the third sub-cavity; or the first air inlet pipe is communicated with the second sub-cavity, and the second air inlet pipe is communicated with the fourth sub-cavity.
Optionally, the first pressure sensing chip includes a first sensing resistor, a second sensing resistor, a third sensing resistor, and a fourth sensing resistor; the second pressure sensing chip comprises a fifth sensing resistor, a sixth sensing resistor, a seventh sensing resistor and an eighth sensing resistor; one end of each of the first sensing resistor, the fourth sensing resistor, the fifth sensing resistor and the eighth sensing resistor is connected with an input voltage, the other end of the first sensing resistor is connected with one end of the second sensing resistor, the other end of the fourth sensing resistor is connected with one end of the third sensing resistor, the other end of the fifth sensing resistor is connected with one end of the sixth sensing resistor, the other end of the eighth sensing resistor is connected with one end of the seventh sensing resistor, the other end of the first sensing resistor is a first output end of the first pressure sensing chip, the other end of the fourth sensing resistor is a second output end of the first pressure sensing chip, the other end of the fifth sensing resistor is a first output end of the second pressure sensing chip, and the other end of the eighth sensing resistor is a second output end of the second pressure sensing chip; the resistance values of the first sensing resistor and the third sensing resistor are respectively reduced along with the increase of the pressure applied to the first pressure sensing chip; the resistance values of the second sensing resistor and the fourth sensing resistor are respectively increased along with the increase of the pressure applied to the first pressure sensing chip; the resistance values of the fifth sensing resistor and the seventh sensing resistor are respectively reduced along with the increase of the pressure applied to the second pressure sensing chip, and the resistance values of the sixth sensing resistor and the eighth sensing resistor are respectively increased along with the increase of the pressure applied to the second pressure sensing chip. Optionally, a compensation circuit is provided in the substrate, and the compensation circuit is electrically connected to the first pressure sensing chip and the second pressure sensing chip; the compensation circuit includes: a full-scale temperature drift compensation circuit and a zero temperature drift compensation circuit.
Optionally, the full-scale temperature drift compensation circuit includes a first resistor, a second resistor and a thermistor, one end of the second resistor and the thermistor after being connected in parallel is connected with a power supply, and the other end of the second resistor and the thermistor after being connected in parallel is connected with one end of the first resistor; or the full-scale temperature drift compensation circuit comprises a first resistor and a diode, wherein the anode of the diode is connected with a power supply, and the cathode of the diode is connected with one end of the first resistor; or the full-scale temperature drift compensation circuit comprises a first resistor and a triode, the triode is provided with a control end, a first connecting end and a second connecting end, the first connecting end is connected with the power supply, and the second connecting end is connected with one end of the first resistor; the zero temperature drift compensation circuit comprises: one end of the third resistor is connected with the input end of the first pressure sensing chip, the input end of the second pressure sensing chip, one end of the fourth resistor and the other end of the first resistor, and the other end of the third resistor is connected with the first output end of the first pressure sensing chip and the second output end of the second pressure sensing chip; the other end of the fourth resistor is connected with the second output end of the first pressure sensing chip and the first output end of the second pressure sensing chip; one end of the fifth resistor is connected with the other ends of the third sensing resistor and the sixth sensing resistor, and the other end of the fifth resistor is connected with a ground terminal; one end of the sixth resistor is connected with the second sensing resistor and the other end of the seventh sensing resistor, and the other end of the sixth resistor is connected with a grounding terminal.
Optionally, the substrate is an alumina ceramic substrate, an aluminum substrate or an epoxy glass fiber fabric substrate.
Optionally, the method further includes: and the supporting pieces are fixedly connected with the edge of the substrate.
Optionally, the support member includes a clamping portion and a main supporting portion connected to the clamping portion, and the edge of the substrate is embedded into the clamping portion.
The technical scheme of the invention has the following advantages:
according to the cross-coupled double-chip pressure sensor provided by the technical scheme of the invention, the cavity of the first capsule is divided into a first sub-cavity and a second sub-cavity which are isolated, the cavity of the second capsule is divided into a third sub-cavity and a fourth sub-cavity which are isolated, the first sub-cavity and the third sub-cavity are oppositely arranged, the second sub-cavity and the fourth sub-cavity are oppositely arranged, the second sub-cavity is communicated with the third sub-cavity through a first air source coupling hole in the substrate, the fourth sub-cavity is communicated with the first sub-cavity through a second air source coupling hole in the substrate, the first pressure sensing chip is positioned in the first sub-cavity, the second pressure sensing chip is positioned in the second sub-cavity, when the first pressure sensing chip in the first sub-cavity is pressed, the second pressure sensing chip is also pressed due to the existence of the first air source coupling hole and the second air source coupling hole, and the sensing directions of the sensing films in the first pressure sensing chip and the second pressure sensing chip are opposite. The first pressure sensing chip and the second pressure sensing chip are not only electrically connected with the upper coupling but also electrically connected with the upper coupling through the air path, so that the sensitivity of the cross-coupled double-chip pressure sensor is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a cross-coupled dual-chip pressure sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first capsule in a cross-coupled dual die pressure sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second capsule in a cross-coupled dual-die pressure sensor in accordance with an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a cross-coupled dual-die pressure sensor according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a cross-coupled dual-die pressure sensor according to yet another embodiment of the present invention;
fig. 6 is a schematic diagram of gas path coupling corresponding to a first pressure sensing chip and a second pressure sensing chip provided in an embodiment of the present invention;
FIG. 7 is a circuit diagram of a substrate with a compensation circuit according to an embodiment of the invention;
FIG. 8 is a circuit diagram in the single chip pressure sensor of comparative example 1;
FIG. 9 is a circuit diagram in the dual die pressure sensor in comparative example 2;
FIG. 10 is a schematic diagram of the electrical coupling of the first pressure sensing die and the second pressure sensing die of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a cross-coupled dual-chip pressure sensor, which is described with reference to fig. 1 to 3, and includes:
a substrate 100;
a first capsule 121 and a second capsule 122 respectively positioned at two sides of the substrate 100, wherein the inner cavity of the first capsule 121 comprises a first sub-cavity A and a second sub-cavity B which are separated, the inner cavity of the second capsule 122 comprises a third sub-cavity C and a fourth sub-cavity D which are separated, the first sub-cavity A is opposite to the third sub-cavity C, the second sub-cavity B is opposite to the fourth sub-cavity D, the second sub-cavity B is communicated with the third sub-cavity C through a first gas source coupling hole 111 in the substrate 100, and the fourth sub-cavity D is communicated with the first sub-cavity A through a second gas source coupling hole 112 in the substrate 100;
the first pressure sensing chip 131 and the second pressure sensing chip 132 are fixed on the surfaces of the two sides of the substrate 100, the first pressure sensing chip 131 is located in the first sub-cavity a, the back cavity of the first pressure sensing chip 131 is communicated with the third sub-cavity C through a first communication port 141 in the substrate 100, the second pressure sensing chip 132 is located in the second sub-cavity B, and the back cavity of the second pressure sensing chip 132 is communicated with the fourth sub-cavity D through a second communication port 142 in the substrate 100, so that a first air path formed between the surface of the first pressure sensing chip 131 and the back cavity of the second pressure sensing chip 132 and a second air path formed between the surface of the second pressure sensing chip 132 and the back cavity of the first pressure sensing chip 131 realize cross coupling;
a first output terminal of the first pressure sensing chip 131 is electrically connected to a second output terminal of the second pressure sensing chip 132, and a second output terminal of the first pressure sensing chip 131 is electrically connected to a first output terminal of the second pressure sensing chip 132, so that the first pressure sensing chip 131 and the second pressure sensing chip 132 realize circuit cross-coupling.
In the cross-coupled dual-chip pressure sensor of the embodiment, the first pressure sensing chip and the second pressure sensing chip are not only electrically connected with the upper coupling but also electrically connected with the upper coupling through the air path, so that the sensitivity of the cross-coupled dual-chip pressure sensor is improved.
The thermal expansion coefficient of the substrate 100 is similar to that of the first pressure sensing chip 131, the thermal expansion coefficient of the substrate 100 is similar to that of the second pressure sensing chip 132, and the thermal mismatch between the substrate 100 and the first and second pressure sensing chips 131 and 132 is low, so that the temperature drift of the cross-coupled dual-chip pressure sensor can be reduced, and the zero stability of the cross-coupled dual-chip pressure sensor can be improved.
In one embodiment, the material of the substrate 100 includes more than 96% of alumina ceramic, aluminum substrate or glass fiber epoxy resin copper clad plate, and the thermal expansion coefficient of the substrate 100 is similar to that of glass or silicon; in other embodiments, the material of the substrate 100 may also include other materials having excellent thermal conductivity and impact resistance.
The first capsule 121 has a first diaphragm 101 in its cavity, and the first sub-cavity a and the second sub-cavity B are located on both sides of the first diaphragm 101.
The second enclosure 122 has a second baffle 102 within its cavity, and the third sub-chamber C and the fourth sub-chamber D are located on either side of the second baffle 102.
In one embodiment, the material of the first separator 101 includes ceramic, epoxy, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber. The material of the first capsule 121 includes ceramic, epoxy resin, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber. The mass percentage of the glass fiber in the mixed material of the polyhexamethylene adipamide and the glass fiber is 28 to 32 percent, for example 30 percent. The mass percentage of the glass fiber in the mixed material of polybutylene terephthalate and glass fiber is 28-32%, for example 30%. In other embodiments, the materials of the first separator 101 and the first capsule 121 may also include other materials with excellent mechanical properties, heat resistance, fatigue resistance, high strength, good toughness, and high temperature reflow resistance, for example, up to 280 degrees celsius.
In one embodiment, the materials of the second diaphragm 102 and the second capsule 122 include ceramic, epoxy, polyhexamethylene adipamide plus 30% glass fiber, polybutylene terephthalate plus 30% glass fiber; in other embodiments, the materials of the second diaphragm 102 and the second capsule 122 may also include other materials with excellent mechanical properties, heat resistance, fatigue resistance, high strength, good toughness, and high temperature reflow resistance, wherein the high temperature reflow temperature is up to 280 ℃.
In one embodiment, the first spacer 101 has a thickness of 0.5mm to 1mm, such as 0.8mm.
In one embodiment, the second spacer 102 has a thickness of 0.5mm to 1mm, such as 0.8mm.
The projection of the first partition board 101 on the surface of the substrate 100 is divided into a first sub-area, a second sub-area and a third sub-area which are connected in sequence, the projection of the second partition board 102 on the surface of the substrate 100 is divided into a fourth sub-area, a fifth sub-area and a sixth sub-area which are connected in sequence, the second sub-area and the fifth sub-area are overlapped, the first sub-area and the fourth sub-area are symmetrically arranged about a first central axis of the substrate 100, and the third sub-area and the sixth sub-area are symmetrically arranged about the first central axis of the substrate 100; the first central axis is parallel to the extension direction of the second and fifth sub-regions.
The substrate 100 has a first surface and a second surface which are oppositely arranged, the first surface is provided with a first sinking groove, and the second surface is provided with a second sinking groove; the bottom surface of the first partition plate is embedded into the first sinking groove; the bottom surface of the second clapboard is embedded into the second sinking groove. Through the embedded cooperation of first baffle and first heavy groove, the embedded cooperation of second baffle and second heavy groove, guarantee the requirement of the airtight isolation between first sub-chamber A and the second sub-chamber B, the requirement of the airtight isolation between third sub-chamber C and the fourth sub-chamber D.
The cross-coupled dual-die pressure sensor further comprises: the first sealant layer is positioned in the first sinking groove at the bottom of the first clapboard 101; and the second sealant layer is positioned in the second sinking groove at the bottom of the second clapboard 102.
In one embodiment, the first sealant layer and the second sealant layer have a hardness of D75 to D80, such as D80, which can ensure a high structural strength.
In one embodiment, the material of the first sealant layer and the second sealant layer comprises silicone or epoxy; in other embodiments, the materials of the first sealant layer and the second sealant layer may also include other materials with good adhesion properties.
The first encapsulant 121 is bonded to the substrate 100 by a first adhesive layer; the second encapsulant 122 is bonded to the substrate 100 by a second glue layer.
In one embodiment, the hardness of each of the first adhesive layer and the second adhesive layer is shore D65-shore D70, such as shore D70. The first adhesive layer and the second adhesive layer are moderate in Shore hardness, have good adhesive property and thermal stability, and have wider working temperature intervals, so that the requirements of sealing and adhesive strength under different temperature environments can be met.
In one embodiment, the material of the first glue layer and the second glue layer comprises silicon gel or epoxy resin; in other embodiments, the material of the first adhesive layer and the second adhesive layer may also include other materials with good adhesive properties.
The first pressure sensing chip 131 is bonded to the substrate 100 through a third adhesive layer, and the second pressure sensing chip 132 is bonded to the substrate 100 through a fourth adhesive layer.
In one embodiment, the hardness of each of the third adhesive layer and the fourth adhesive layer is shore a 38-shore a42, such as shore a 40.
In one embodiment, the third glue film with the material of fourth glue film includes silica gel or epoxy, the coefficient of thermal expansion of silica gel is close with the coefficient of thermal expansion of silicon and glass, because silica gel has very big elasticity after the solidification, consequently the residual stress that produces in cross coupling's two chip pressure sensor's the packaging technology process is very little, can guarantee cross coupling's two chip pressure sensor's zero position and long-term stability, in addition, the coefficient of thermal expansion between silica gel, base plate, first pressure sensing chip and the second pressure sensing chip is very close, and the deformation that produces of working under high temperature is unanimous, and thermal stress is little, can guarantee cross coupling's two chip pressure sensor stability that floats the temperature.
The cross-coupled dual-die pressure sensor further comprises: a first intake pipe 151 and a second intake pipe 152; the first air inlet pipe 151 is communicated with the first sub-cavity A, and the second air inlet pipe 152 is communicated with the second sub-cavity B; alternatively, the first air inlet pipe 151 is communicated with the first sub-cavity a, and the second air inlet pipe 152 is communicated with the third sub-cavity C; alternatively, the first air inlet pipe 151 is communicated with the second sub-cavity B, and the second air inlet pipe 152 is communicated with the fourth sub-cavity D.
The first and second intake pipes 151 and 152 are arranged in parallel or perpendicular to the first surface of the substrate 100.
In this embodiment, in fig. 4, the first air inlet pipe 151 is communicated with the first sub-cavity a, the second air inlet pipe 152 is communicated with the second sub-cavity B, and the first air inlet pipe 151 and the second air inlet pipe 152 are respectively vertically arranged with the first surface of the substrate 100 as an example, the first air inlet pipe 151 includes a first connecting section and a second connecting section which are communicated with each other, one end of the first connecting section extends into the first sub-cavity a and is communicated with the first sub-cavity a, the other end of the first connecting section is connected with one end of the second connecting section, and the cross-sectional area of the second connecting section near one end of the first connecting section is larger than the cross-sectional area of the second connecting section far away from one end of the first connecting section. The first intake pipe 151 is formed in a reverse tapered shape. The second intake pipe 152 includes third linkage segment and fourth linkage segment of mutual UNICOM, the one end of third linkage segment extend to in the second sub cavity B and with the sub cavity B intercommunication of second, the other end of third linkage segment with the one end of fourth linkage segment is connected, the fourth linkage segment is close to the cross-sectional area of third linkage segment one end is greater than the fourth linkage segment is kept away from the cross-sectional area of third linkage segment one end. The second intake pipe 152 has a reverse tapered shape.
Fig. 5 illustrates that the first air inlet pipe 151 is communicated with the second sub-chamber B, the second air inlet pipe 152 is communicated with the fourth sub-chamber D, and the first air inlet pipe 151 and the second air inlet pipe 152 are respectively arranged in parallel with the first surface of the substrate 100.
Referring to fig. 6, the back cavity of the first pressure sensing chip 131 is communicated with the third sub-cavity C through the first communication port 141 in the substrate 100, the second pressure sensing chip 132 is located in the second sub-cavity B, and the back cavity of the second pressure sensing chip 132 is communicated with the fourth sub-cavity D through the second communication port 142 in the substrate 100.
In one embodiment, referring to FIG. 7, the first pressure sensing die 131 includes a first sensing resistor R b1 A second sensing resistor R b2 A third sensing resistor R b3 And a fourth sensing resistor R b4 . The second pressure sensing chip 132 includes a fifth sensing resistor R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 . The first sensing resistor R b1 And a fourth sensing resistor R b4 A fifth sense resistor R b5 And an eighth sense resistor R b8 Is connected to an input voltage V in The first sense resistor R b1 Is connected with the second sensing resistor R b2 The fourth sense resistor R, the fourth sense resistor R b4 Is connected with the third sensing resistor R b3 Of the fifth sense resistor R b5 The other end of the first resistor is connected with the six sensing resistors R b6 Of said eighth sense resistor R b8 Is connected with the seventh sensing resistor R b7 Of the first sense resistor R b1 The other end of the first sensing resistor R is a first output end of the first pressure sensing chip 131, and the fourth sensing resistor R b4 The other end of the first resistor is a second output end of the first pressure sensing chip 131, and the fifth sensing resistor R b5 The other end of (b) is a first output end of the second pressure sensing chip 132, and the eighth sensing resistor R b8 The other end of the second pressure sensing chip 132 is a second output end of the second pressure sensing chip; the first sensing resistor R b1 And the third sense resistance R b3 Respectively decrease with an increase in the pressure to which the first pressure sensing chip 131 is subjected; the second sensing resistor R b2 And the fourth sense resistance R b4 Respectively, increase with the increase of the pressure applied to the first pressure sensing chip 131; the fifth sensing resistor R b5 And the seventh sense resistor R b7 Respectively, decreases with an increase in the pressure to which the second pressure-sensing chip 132 is subjected, and the sixth sensorInductive resistor R b6 And the eighth sense resistor R b8 Respectively, increases with an increase in the pressure to which the second pressure sensing chip 132 is subjected.
The substrate 100 has a compensation circuit therein, and the compensation circuit is electrically connected to the first pressure sensing chip 131 and the second pressure sensing chip 132.
The compensation circuit includes: a full-scale temperature drift compensation circuit and a zero temperature drift compensation circuit.
In this embodiment, with continued reference to FIG. 7, the full-scale temperature drift compensation circuit includes a first resistor R c1 A second resistor R c2 And a thermistor R c Said second resistance R c2 And the thermistor R c One end of the parallel connection is connected with a power supply V cc Connected, the second resistor R c2 And the thermistor R c The other end of the resistor is connected with the first resistor R in parallel c1 Is connected at one end.
In another embodiment, the full-scale temperature drift compensation circuit comprises a first resistor and a diode, wherein the anode of the diode is connected with a power supply, and the cathode of the diode is connected with one end of the first resistor.
In another embodiment, the full-scale temperature drift compensation circuit comprises a first resistor and a triode, wherein the triode is provided with a control end, a first connecting end and a second connecting end, the first connecting end is connected with the power supply, and the second connecting end is connected with one end of the first resistor.
In one embodiment, with continuing reference to FIG. 7, the zero temperature drift compensation circuit includes: third resistor R c3 A fourth resistor R c4 A fifth resistor R c5 And a sixth resistor R c6 Said third resistance R c3 And the input terminal of the first pressure sensing chip 131 and the input terminal of the second pressure sensing chip 132, and the fourth resistor R c4 And the first resistor R c1 Is connected to the other end of the third resistor R c3 And the other end of the first pressure sensing chip 131 and the first output end of the second pressure sensing chip 131 and the third output end of the first pressure sensing chipThe second output end of the second pressure sensing chip 132 is connected; the fourth resistor R c4 The other end of the first pressure sensing chip 131 is connected to the second output end of the first pressure sensing chip 131 and the first output end of the second pressure sensing chip 132; the fifth resistor R c5 And the third sensing resistor R b3 And the sixth sense resistor R b6 Is connected to the other end of the fifth resistor R c5 The other end of the second switch is connected with a grounding terminal; the sixth resistor R c6 And the second sensing resistor R b2 And the seventh sense resistor R b7 Is connected to the other end of the sixth resistor R c6 The other end of the second switch is connected to the ground terminal. The cross-coupled dual chip pressure sensor further comprises: a plurality of supporters 160 fixedly coupled to the edge of the substrate 100.
In this embodiment, the material of the support 160 includes copper, tin, and zinc; in other embodiments, the material of the support 160 may also include other metals with toughness, elasticity, wear resistance, and corrosion resistance.
The support member 160 includes a clamping portion 161 and a main supporting portion 162 connected to the clamping portion 161, and the edge of the substrate 100 is embedded in the clamping portion 161.
In this embodiment, the plurality of supporters 160 and the substrate 100 are packaged in a double-row vertical manner, the plurality of supporters 160 are perpendicular to the plane of the substrate 100, and the plurality of supporters 160 have a supporting function on the cross-coupled dual-chip pressure sensor, so as to ensure the strength of the substrate 100 when packaged with the first package 121 and the second package 122; in other embodiments, the plurality of supporting members 160 and the substrate 100 may be packaged in a single row, and the plurality of supporting members 160 are parallel to the plane of the substrate 100. The engaging portion 161 is connected to the substrate 100 by soldering. The surface of the clamping portion 161 is plated with gold or tin, so that the clamping portion 161 can be prevented from being oxidized.
With continued reference to fig. 1, four top corners of the first and second packages 121 and 122 have positioning pins 171, four bottom corners of the substrate 100 have positioning holes 172, the positioning pins 171 are adapted to be inserted into the positioning holes 172, and the positioning pins 171 and the positioning holes 172 can fix the first and second packages 121 and 122 with the substrate 100 and facilitate the packaging of the cross-coupled dual chip pressure sensor.
In comparative example 1, referring to fig. 8, fig. 8 is a circuit diagram in a single-chip pressure sensor including a first sense resistor R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 The first sense resistor R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 Forming a wheatstone bridge circuit. The input voltage of the Wheatstone bridge circuit is V in 。
When the single chip is not pressed, the first sensing resistor R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 Are all R, and the equivalent resistance of the Wheatstone bridge is also R. Δ V when the single chip pressure sensor is not under pressure out1 ＝V out1+ -V out1- ＝0V。
When the single-chip pressure sensor receives pressure, the sensing film layer can deform, and deformation information generated by the sensing film layer is transmitted to the first sensing resistor R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 So that the first sense resistance R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 The resistance value of (c) is changed. Due to the first sense resistor R 1 And a third sense resistor R 3 Decreases with increasing pressure, and a second sensing resistor R 2 And a fourth sense resistor R 4 The first sensing resistor R increases with the increase of the pressure 1 And a second sense resistor R 2 The series resistance of the third sensing resistor R does not change along with the pressure 3 And a fourth sense resistor R 4 The series resistance of (a) does not vary with pressure, and thus the total resistance of the wheatstone bridge is constant with pressure. When the single chip pressure sensor is connectedAt pressure,. DELTA.V out2 ＝V out2+ -V out2- ＝V in * q/R, q is the first sensing resistance R 1 A second sensing resistor R 2 A third sensing resistor R 3 And a fourth sense resistor R 4 The amount of resistance change caused by each of the pressure sensors.
The dual die pressure sensor of comparative example 2, referring to fig. 9, the dual die pressure sensor of comparative example 2 includes a first sensing die including a first sensing resistor R and a second sensing die a1 A second sensing resistor R a2 A third sensing resistor R a3 A fourth sense resistor R a4 The second sensing chip comprises a fifth sensing resistor R a5 And a sixth sensing resistor R a6 And a seventh sense resistor R a7 And an eighth sense resistor R a8 . First sensing resistor R a1 A second sensing resistor R a2 A third sensing resistor R a3 A fourth sense resistor R a4 Forming a first wheatstone bridge circuit. Fifth sense resistor R a5 And a sixth sensing resistor R a6 And a seventh sense resistor R a7 And an eighth sense resistor R a8 Constituting a second wheatstone bridge circuit. The first Wheatstone bridge circuit and the second Wheatstone bridge circuit are connected in parallel. The input voltage of the double-chip pressure sensor is V in . The first and second sensor dies of comparative example 2 are coupled over electrical connections, but not over air paths.
The first sensing chip senses the membrane layer to deform when receiving pressure, and deformation information generated by the sensing membrane layer is transmitted to the first sensing resistor R a1 A second sensing resistor R a2 A third sensing resistor R a3 A fourth sense resistor R a4 So that the first sense resistance R a1 A second sensing resistor R a2 A third sensing resistor R a3 And a fourth sense resistor R a4 The resistance value of (c) is changed. When the sensing film layer is deformed when the second sensing chip is under pressure, the deformation information generated by the sensing film layer is transmitted to the fifth sensing resistor R a5 And a sixth sensing resistor R a6 And a seventh sense resistor R a7 And a firstEight sense resistors R a8 . However, since the first and second sensor dies sense pressure independently, in one case, the first sensor die is set to be pressurized while the second sensor die is not. First sensing resistor R a1 And a third sense resistor R a3 The resistance value of (2) decreases with the increase of the pressure, the second sensing resistor R a2 And a fourth sense resistor R a4 Increases with increasing pressure.
Comparative example 2 the first sense resistor R was pressed when the first sense die and the second sense die were not pressed in the dual die pressure sensor a1 A second sensing resistor R a2 A third sensing resistor R a3 And a fourth sensing resistor R a4 And a fifth sense resistor R a5 And a sixth sensing resistor R a6 And a seventh sense resistor R a7 And an eighth sense resistor R a8 All initial values of (2) are R. Δ V when the prior art dual chip pressure sensor is not under pressure out3 ＝V out3+ -V out3- ＝0V。
Δ V when the first sensor chip was pressurized and the second sensor chip was not pressurized in the dual chip pressure sensor of comparative example 2 out4 ＝V out4+ -V out4- ＝V in * a/2 (R-q), q is the first sensing resistance R a1 A second sensing resistor R a2 A third sensing resistor R a3 A fourth sense resistor R a4 A fifth sense resistor R a5 And a sixth sensing resistor R a6 And a seventh sense resistor R a7 And an eighth sense resistor R a8 The amount of resistance change caused by each of the pressure sensors. The two-chip pressure sensor of comparative example 2 has a full-scale Δ V of the two-chip pressure sensor of comparative example 2, compared to the one-chip pressure sensor of comparative example 1 out4 Full scale Δ V of the single chip pressure sensor compared to comparative example 1 out2 Phase difference of V in *a*(R-2q)/R(2R-q)。
While the cross-coupled dual chip pressure sensor of the present invention includes a first pressure sensing chip and a second pressure sensing chip, referring to fig. 10, the first pressure sensing chip includes a first sensing resistor R b1 A second sensing resistor R b2 A third sensing resistor R b3 A fourth sense resistor R b4 . The second pressure sensing chip comprises a fifth sensing resistor R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 . The first pressure sensing chip comprises a first sensing resistor R b1 A second sensing resistor R b2 A third sensing resistor R b3 A fourth sense resistor R b4 Forming a first wheatstone bridge circuit. Fifth sense resistor R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 Constituting a second wheatstone bridge circuit. The first Wheatstone bridge circuit and the second Wheatstone bridge circuit are connected in parallel. The input voltage of the cross-coupled double-chip pressure sensor is V in . Specifically, the first sensing resistor R b1 A fourth sense resistor R b4 And a fifth sense resistor R b5 And an eighth sense resistor R b8 One end of which is connected to an input voltage V in The first sense resistor R b1 Is connected with the second sensing resistor R at the other end b2 The fourth sense resistor R, the fourth sense resistor R b4 Is connected with the third sensing resistor R b3 Of the fifth sense resistor R b5 The other end of the first resistor is connected with the six sensing resistors R b6 Of said eighth sense resistor R b8 Is connected with the seventh sensing resistor R b7 The second sensing resistor R, the second sensing resistor R b2 Another end of (1), a third sense resistor R b3 Another end of (1), six sense resistors R b6 And the other end of (1) and a seventh sense resistor R b7 Is electrically connected to a ground terminal, the first sense resistor R b1 And the other end of (2) and the eighth sensing resistor R b8 The other end of the first voltage output end V is connected with the first voltage output end V out5+ (ii) a The fourth sensing resistor R b4 And the other end of the second resistor and the fifth sensing resistor R b5 The other end of the first voltage output terminal is connected with a second voltage output terminal V out5- . When the cross-coupled dual-chip pressure sensor is not pressed, the first sensing resistor R b1 A second sensing resistor R b2 The first stepThree sensing resistors R b3 A fourth sense resistor R b4 And a fifth sense resistor R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 All initial values of (2) are R. Δ V when the cross-coupled dual-chip pressure sensor is not under pressure out5 ＝V out5+ -V out5- ＝0V。
When the cross-coupled dual-chip pressure sensor is stressed, the sensing film layer of the first pressure sensing chip deforms, and deformation information generated by the sensing film layer is transmitted to the first sensing resistor R b1 A second sensing resistor R b2 A third sensing resistor R b3 And a fourth sense resistor R b4 So that the first sense resistance R b1 A second sensing resistor R b2 A third sensing resistor R b3 And a fourth sense resistor R b4 Change of resistance value of the first sensing resistor R b1 And a third sense resistor R b3 Respectively, decreases with the increase of the pressure applied to the first pressure sensing chip, and the second sensing resistor R b2 And a fourth sense resistor R b4 Respectively, increases with an increase in the pressure to which the first pressure sensing chip is subjected. The sensing film layer of the second pressure sensing chip can deform, and deformation information generated by the sensing film layer is transmitted to the fifth sensing resistor R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 So that the fifth sense resistance R b5 And a sixth sensing resistor R b6 And a seventh sense resistor R b7 And an eighth sense resistor R b8 Change of resistance value of, the fifth sensing resistor R b5 And a seventh sense resistor R b7 Respectively decreases with the increase of the pressure applied to the second pressure sensing chip, and the sixth sensing resistor R b6 And an eighth sense resistor R b8 Respectively, increases with an increase in the pressure to which the second pressure sensing chip is subjected. Because the sensing films in the first pressure sensing chip and the second pressure sensing chip sense the same pressure and opposite directions, the sensing films in the first pressure sensing chip and the second pressure sensing chip respectively sense the same pressure and opposite directionsWhen any one of the sensing films in the second pressure sensing chip is under pressure, the sensing film in the first pressure sensing chip and the sensing film in the second pressure sensing chip can be under pressure, for example, when the front surface of the first pressure sensing chip is under pressure, because the second sub-cavity is communicated with the third sub-cavity through the first air source coupling hole in the substrate, the fourth sub-cavity is communicated with the first sub-cavity through the second air source coupling hole in the substrate, and the back surface of the second pressure sensing chip can also be under pressure, when the first sensing resistor R is under pressure, the first sensing resistor R can be connected with the second sensing resistor R through the second air source coupling hole in the substrate b1 And a third sense resistor R b3 When the resistance value of (2) decreases, the sixth sensing resistor R b6 And an eighth sense resistor R b8 When the resistance of the second sensing resistor R is decreased b2 And a fourth sense resistor R b4 When the resistance value of (3) rises, the fifth sensing resistor R b5 And a seventh sense resistor R b7 The resistance value of (2) increases.
When the pressures experienced by the cross-coupled two-chip pressure sensor of the present invention and the single-chip pressure sensor are equal, the value of q is equal to the value of a, and thus, the full-scale Δ V of the cross-coupled two-chip pressure sensor of the present invention can be obtained out6 Full range DeltaV with single chip pressure sensor out2 Consistent, therefore dual-chip pressure sensors plus gas-path coupling enables the sensitivity of the cross-coupled dual-chip pressure sensor to be comparable to that of a single-chip pressure sensorThe sensitivity is consistent, so that the sensitivity of the cross-coupled dual-chip pressure sensor is higher.
The cross-coupled double-chip pressure sensor disclosed by the invention can realize high-stability and high-precision output, the temperature range is-40 ℃ to 125 ℃, and the pressure range is-500 Pa to +500 Pa.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (11)
1. A cross-coupled dual-die pressure sensor, comprising:
a substrate;
the first capsule and the second capsule are respectively positioned on two sides of the substrate, the inner cavity of the first capsule comprises a first sub-cavity and a second sub-cavity which are separated, the inner cavity of the second capsule comprises a third sub-cavity and a fourth sub-cavity which are separated, the first sub-cavity is opposite to the third sub-cavity, the second sub-cavity is opposite to the fourth sub-cavity, the second sub-cavity is communicated with the third sub-cavity through a first gas source coupling hole in the substrate, and the fourth sub-cavity is communicated with the first sub-cavity through a second gas source coupling hole in the substrate;
the first pressure sensing chip is positioned in the first sub-cavity, a back cavity of the first pressure sensing chip is communicated with the third sub-cavity through a first communication port in the substrate, the second pressure sensing chip is positioned in the second sub-cavity, and a back cavity of the second pressure sensing chip is communicated with the fourth sub-cavity through a second communication port in the substrate, so that a first air path formed between the surface of the first pressure sensing chip and the back cavity of the second pressure sensing chip and a second air path formed between the surface of the second pressure sensing chip and the back cavity of the first pressure sensing chip are in cross coupling;
the first output end of the first pressure sensing chip is electrically connected with the second output end of the second pressure sensing chip, and the second output end of the first pressure sensing chip is electrically connected with the first output end of the second pressure sensing chip, so that the first pressure sensing chip and the second pressure sensing chip realize circuit cross coupling.
2. The cross-coupled dual-die pressure sensor of claim 1, wherein the first capsule has a first diaphragm within its cavity, the first and second sub-cavities being located on either side of the first diaphragm;
a second partition plate is arranged in the cavity of the second enclosure, and the third sub-cavity and the fourth sub-cavity are respectively positioned on two sides of the second partition plate;
preferably, the material of the first separator and the first capsule includes ceramic, epoxy resin, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber, and the material of the second separator and the second capsule includes ceramic, epoxy resin, a mixed material of polyhexamethylene adipamide and glass fiber, a mixed material of polybutylene terephthalate and glass fiber, or a mixed material of acrylonitrile-butadiene-styrene copolymer and glass fiber;
preferably, the thickness of the first separator is 0.5mm-1mm, and the thickness of the second separator is 0.5mm-1mm.
3. The cross-coupled dual chip pressure sensor according to claim 2, wherein the projection of the first diaphragm on the substrate surface is divided into a first sub-region, a second sub-region and a third sub-region which are connected in sequence, the projection of the second diaphragm on the substrate surface is divided into a fourth sub-region, a fifth sub-region and a sixth sub-region which are connected in sequence, the second sub-region and the fifth sub-region are coincident, the first sub-region and the fourth sub-region are symmetrically arranged about a first central axis of the substrate, and the third sub-region and the sixth sub-region are symmetrically arranged about the first central axis of the substrate; the first central axis is parallel to the extending direction of the second and fifth sub-regions.
4. The cross-coupled dual die pressure sensor of claim 2, wherein the substrate has first and second oppositely disposed faces, the first face having a first counterbore and the second face having a second counterbore disposed therein; the bottom surface of the first partition plate is embedded into the first sinking groove; the bottom surface of the second clapboard is embedded into the second sinking groove.
5. The cross-coupled dual-die pressure sensor of claim 4, further comprising: the first sealing adhesive layer is positioned in the first sinking groove at the bottom of the first clapboard; the second sealant layer is positioned in the second sinking groove at the bottom of the second partition plate;
preferably, the hardness of the first sealant layer and the hardness of the second sealant layer are both shore D75-shore D80;
preferably, the material of the first sealant layer and the second sealant layer includes silicone or epoxy resin.
6. The cross-coupled dual chip pressure sensor of claim 1, wherein the first encapsulant is bonded to the substrate by a first glue layer; the second encapsulant is bonded to the substrate by a second glue layer;
preferably, the hardness of the first adhesive layer and the hardness of the second adhesive layer are both shore D65-shore D70;
preferably, the material of the first adhesive layer and the second adhesive layer includes silicone or epoxy resin.
7. The cross-coupled dual die pressure sensor of claim 1, wherein a first pressure sensing die is bonded to the substrate by a third adhesive layer, and the second pressure sensing die is bonded to the substrate by a fourth adhesive layer;
preferably, the hardness of each of the third adhesive layer and the fourth adhesive layer is shore a 38-shore a42;
preferably, the material of the third adhesive layer and the fourth adhesive layer comprises silicone or epoxy resin.
8. The cross-coupled dual-die pressure sensor of claim 1, further comprising: a first intake pipe and a second intake pipe; the first air inlet pipe is communicated with the first sub-cavity, and the second air inlet pipe is communicated with the second sub-cavity;
or the first air inlet pipe is communicated with the first sub-cavity, and the second air inlet pipe is communicated with the third sub-cavity;
or the first air inlet pipe is communicated with the second sub-cavity, and the second air inlet pipe is communicated with the fourth sub-cavity.
9. The cross-coupled dual die pressure sensor of claim 1, wherein the first pressure sensing die comprises a first sense resistor, a second sense resistor, a third sense resistor, a fourth sense resistor; the second pressure sensing chip comprises a fifth sensing resistor, a sixth sensing resistor, a seventh sensing resistor and an eighth sensing resistor; one end of each of the first sensing resistor, the fourth sensing resistor, the fifth sensing resistor and the eighth sensing resistor is connected with an input voltage, the other end of the first sensing resistor is connected with one end of the second sensing resistor, the other end of the fourth sensing resistor is connected with one end of the third sensing resistor, the other end of the fifth sensing resistor is connected with one end of the sixth sensing resistor, the other end of the eighth sensing resistor is connected with one end of the seventh sensing resistor, the other end of the first sensing resistor is a first output end of the first pressure sensing chip, the other end of the fourth sensing resistor is a second output end of the first pressure sensing chip, the other end of the fifth sensing resistor is a first output end of the second pressure sensing chip, and the other end of the eighth sensing resistor is a second output end of the second pressure sensing chip; the resistance values of the first sensing resistor and the third sensing resistor are respectively reduced along with the increase of the pressure applied to the first pressure sensing chip; the resistance values of the second sensing resistor and the fourth sensing resistor are respectively increased along with the increase of the pressure applied to the first pressure sensing chip; the resistance values of the fifth sensing resistor and the seventh sensing resistor are respectively reduced along with the increase of the pressure applied to the second pressure sensing chip, and the resistance values of the sixth sensing resistor and the eighth sensing resistor are respectively increased along with the increase of the pressure applied to the second pressure sensing chip.
10. The cross-coupled dual die pressure sensor of claim 9, wherein the substrate has a compensation circuit therein, the compensation circuit being electrically connected to the first pressure sensing die and the second pressure sensing die; the compensation circuit includes: a full-scale temperature drift compensation circuit and a zero temperature drift compensation circuit;
preferably, the full-scale temperature drift compensation circuit comprises a first resistor, a second resistor and a thermistor, wherein one end of the second resistor and one end of the thermistor after being connected in parallel are connected with a power supply, and the other end of the second resistor and the thermistor after being connected in parallel are connected with one end of the first resistor; or the full-scale temperature drift compensation circuit comprises a first resistor and a diode, wherein the anode of the diode is connected with a power supply, and the cathode of the diode is connected with one end of the first resistor; or the full-scale temperature drift compensation circuit comprises a first resistor and a triode, the triode is provided with a control end, a first connecting end and a second connecting end, the first connecting end is connected with the power supply, and the second connecting end is connected with one end of the first resistor;
the zero temperature drift compensation circuit comprises: one end of the third resistor is connected with the input end of the first pressure sensing chip, the input end of the second pressure sensing chip, one end of the fourth resistor and the other end of the first resistor, and the other end of the third resistor is connected with the first output end of the first pressure sensing chip and the second output end of the second pressure sensing chip; the other end of the fourth resistor is connected with the second output end of the first pressure sensing chip and the first output end of the second pressure sensing chip; one end of the fifth resistor is connected with the other ends of the third sensing resistor and the sixth sensing resistor, and the other end of the fifth resistor is connected with a grounding end; one end of the sixth resistor is connected with the other ends of the second sensing resistor and the seventh sensing resistor, and the other end of the sixth resistor is connected with a grounding end;
preferably, the substrate is an alumina ceramic substrate, an aluminum substrate or an epoxy glass fabric substrate.
11. The cross-coupled dual-die pressure sensor of claim 1, further comprising: the supporting pieces are fixedly connected with the edge of the substrate;
preferably, the support member includes a clamping portion and a main supporting portion connected to the clamping portion, and the edge of the substrate is embedded in the clamping portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210308962.8A CN115290246B (en) | 2022-03-25 | 2022-03-25 | Cross-coupled double-chip pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210308962.8A CN115290246B (en) | 2022-03-25 | 2022-03-25 | Cross-coupled double-chip pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115290246A true CN115290246A (en) | 2022-11-04 |
| CN115290246B CN115290246B (en) | 2024-07-19 |
Family
ID=83819893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210308962.8A Active CN115290246B (en) | 2022-03-25 | 2022-03-25 | Cross-coupled double-chip pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115290246B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102365540A (en) * | 2009-02-10 | 2012-02-29 | 飞思卡尔半导体公司 | Exposed pad backside pressure sensor package |
| US20140001584A1 (en) * | 2011-03-15 | 2014-01-02 | Memsen Electronics Inc | Mems pressure sensor and manufacturing method therefor |
| CN203719812U (en) * | 2014-03-05 | 2014-07-16 | 中国电子科技集团公司第三十八研究所 | Air pressure sensor and acceleration sensor integrated MEMS chip |
| CN104040315A (en) * | 2011-12-09 | 2014-09-10 | 欧芬菲尔德公司 | Fluid pressure sensor and measurement probe |
| US20170233245A1 (en) * | 2016-02-15 | 2017-08-17 | Stmicroelectronics S.R.L. | Pressure sensor encapsulated in elastomeric material, and system including the pressure sensor |
| US20180136066A1 (en) * | 2016-11-11 | 2018-05-17 | Measurement Specialties, Inc. | Method and apparatus for correction of pressure sensors |
| CN108516518A (en) * | 2018-05-11 | 2018-09-11 | 中国科学院电子学研究所 | Resonance type pressure sensor and preparation method thereof based on piezoresistive detection |
| CN109553060A (en) * | 2017-09-25 | 2019-04-02 | 森托斯有限公司 | Pressure sensor package part and electronic device including pressure sensor package part |
| CN209589335U (en) * | 2019-01-31 | 2019-11-05 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and its measuring system |
| CN112781760A (en) * | 2020-12-24 | 2021-05-11 | 中国电子科技集团公司第四十九研究所 | Micro-pressure sensor |
| CN113711000A (en) * | 2019-04-17 | 2021-11-26 | 荷兰应用科学研究会(Tno) | Pressure sensor |
| CN113984255A (en) * | 2021-11-05 | 2022-01-28 | 深圳信息职业技术学院 | Packaging structure of pressure sensor chip with temperature compensation |
-
2022
- 2022-03-25 CN CN202210308962.8A patent/CN115290246B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102365540A (en) * | 2009-02-10 | 2012-02-29 | 飞思卡尔半导体公司 | Exposed pad backside pressure sensor package |
| US20140001584A1 (en) * | 2011-03-15 | 2014-01-02 | Memsen Electronics Inc | Mems pressure sensor and manufacturing method therefor |
| CN104040315A (en) * | 2011-12-09 | 2014-09-10 | 欧芬菲尔德公司 | Fluid pressure sensor and measurement probe |
| CN203719812U (en) * | 2014-03-05 | 2014-07-16 | 中国电子科技集团公司第三十八研究所 | Air pressure sensor and acceleration sensor integrated MEMS chip |
| US20170233245A1 (en) * | 2016-02-15 | 2017-08-17 | Stmicroelectronics S.R.L. | Pressure sensor encapsulated in elastomeric material, and system including the pressure sensor |
| US20180136066A1 (en) * | 2016-11-11 | 2018-05-17 | Measurement Specialties, Inc. | Method and apparatus for correction of pressure sensors |
| CN109553060A (en) * | 2017-09-25 | 2019-04-02 | 森托斯有限公司 | Pressure sensor package part and electronic device including pressure sensor package part |
| CN108516518A (en) * | 2018-05-11 | 2018-09-11 | 中国科学院电子学研究所 | Resonance type pressure sensor and preparation method thereof based on piezoresistive detection |
| CN209589335U (en) * | 2019-01-31 | 2019-11-05 | 南京信息工程大学 | A kind of high temperature micro-pressure pressure sensor and its measuring system |
| CN113711000A (en) * | 2019-04-17 | 2021-11-26 | 荷兰应用科学研究会(Tno) | Pressure sensor |
| CN112781760A (en) * | 2020-12-24 | 2021-05-11 | 中国电子科技集团公司第四十九研究所 | Micro-pressure sensor |
| CN113984255A (en) * | 2021-11-05 | 2022-01-28 | 深圳信息职业技术学院 | Packaging structure of pressure sensor chip with temperature compensation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115290246B (en) | 2024-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5157972A (en) | Pressure sensor with high modules support | |
| US6351996B1 (en) | Hermetic packaging for semiconductor pressure sensors | |
| US6272928B1 (en) | Hermetically sealed absolute and differential pressure transducer | |
| US3817107A (en) | Semiconductor pressure transducer | |
| US6450039B1 (en) | Pressure sensor and method of manufacturing the same | |
| CN101900625B (en) | Design of wet/wet differential pressure sensor based on microelectronic packaging process | |
| EP2834608B1 (en) | Method for production of a ceramic pressure sensor | |
| JPS61500633A (en) | pressure transducer | |
| CN202442825U (en) | Dielectric isolation encapsulating structure of pressure sensor | |
| CN212409938U (en) | MEMS pressure sensor oil-filled core | |
| US4852408A (en) | Stop for integrated circuit diaphragm | |
| JPS61500632A (en) | Pressure sensor with flat overpressure stop for measuring diaphragm | |
| GB2042258A (en) | Pressure sensor | |
| WO2011131045A1 (en) | Package structure for silicon pressure sensor | |
| US9689768B2 (en) | Mechanical stabilizing and electrical as well as hydraulic adapting of a silicon chip by ceramics | |
| CN110207885A (en) | Pressure sensor core, core manufacture and packaging method and pressure sensor based on upside-down mounting welding core | |
| CN217765302U (en) | Cross-coupled double-chip pressure sensor | |
| CN215448264U (en) | Composite diaphragm type MEMS pressure sensor | |
| WO2023245895A1 (en) | Temperature and pressure sensor | |
| EP3515858B1 (en) | Method of manufacturing a sensor using anodic bonding | |
| CN115290246A (en) | Cross-coupled double-chip pressure sensor | |
| US6543292B1 (en) | Piezoresistive air pressure sensor | |
| CN114136528B (en) | SOI pressure sensitive chip | |
| JP2009265012A (en) | Semiconductor sensor | |
| CN113624368A (en) | High-temperature-resistant oil-filled SOI pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |