CN115286375A - Ba-Ca-R-Si based microwave dielectric ceramic material with low dielectric constant and preparation method thereof - Google Patents
Ba-Ca-R-Si based microwave dielectric ceramic material with low dielectric constant and preparation method thereof Download PDFInfo
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002994 raw material Substances 0.000 claims description 104
- 239000000463 material Substances 0.000 claims description 48
- 238000001035 drying Methods 0.000 claims description 31
- 229910004860 CaZn Inorganic materials 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 25
- 238000002156 mixing Methods 0.000 claims description 24
- 238000005245 sintering Methods 0.000 claims description 22
- 238000000498 ball milling Methods 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 19
- 238000004321 preservation Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 16
- 239000011265 semifinished product Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 8
- 238000005469 granulation Methods 0.000 claims description 8
- 230000003179 granulation Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000000748 compression moulding Methods 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000007873 sieving Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000004513 sizing Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 4
- 238000013329 compounding Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to the technical field of microwave dielectric ceramics and manufacturing thereof, in particular to a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material and a preparation method thereof.
Description
Technical Field
The invention relates to the technical field of microwave dielectric ceramics and manufacturing thereof, in particular to a low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material and a preparation method thereof.
Background
The low dielectric microwave dielectric ceramic is mainly applied to the millimeter wave field as a substrate and a resonant filter, such as 5G/6G mobile communication and satellite communication with high dielectric loss requirement. As the number of 5G base stations is rapidly increasing worldwide, the market also generates more demand for low dielectric microwave dielectric ceramics. Therefore, the development of more microwave dielectric ceramics with low cost, low dielectric constant and high Q value has important industrial application value.
At present, ceramic materials for LTCC ceramic substrates mainly comprise three systems, namely a glass ceramic composite system, a microcrystalline glass system and an amorphous glass system, but generally have larger dielectric loss. Typical low dielectric constant microwave dielectric ceramic material systems mainly include silicate systems, vanadate systems, tungstate systems, phosphate systems, garnet structure compound systems, and the like. In recent years, there has been an increasing interest in low temperature co-fired ceramics (LTCC) with silicate structures, which are the most preferred materials for microwave communication applications due to their low dielectric constant and high quality factor. Therefore, the current 5G/6G era is faced, and the problem that the selection surface of the existing low-dielectric low-loss LTCC material is insufficient is urgently needed to be solved.
Disclosure of Invention
The invention aims to provide a low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material and a preparation method thereof, and aims to solve the problem that the existing low-dielectric and low-loss LTCC material is insufficient in selection surface.
In order to achieve the above objects, in a first aspect, the present invention provides a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material and a method for preparing the same, comprising the steps of:
proportioning the raw materials to obtain proportioned raw materials;
pretreating the proportioned raw materials to obtain pretreated raw materials;
processing the pretreated raw material to obtain raw material particles;
pressing the raw material particles to obtain a low dielectric semi-finished product raw material;
and preparing a ceramic material by using the low dielectric semi-finished product raw material.
The specific mode of proportioning the raw materials to obtain the proportioned raw materials is as follows;
carrying out heat preservation treatment on ZnO and MgO to obtain a heat preservation raw material;
mixing the heat-insulating raw material and BaCO 3 、CaCO 3 、Co 2 O 3 And SiO 2 Proportioning to obtain proportioning raw materials.
The specific mode for preprocessing the proportioning raw materials to obtain the preprocessed raw materials is as follows:
and mixing the proportioning materials, zirconium balls and absolute ethyl alcohol, and then sequentially carrying out ball milling, drying, sieving and presintering to obtain the pretreated raw materials.
The specific mode for processing the pretreated raw materials to obtain raw material particles is as follows:
mixing the pretreated raw materials with zirconium balls and absolute ethyl alcohol, and then sequentially carrying out ball milling and drying to obtain dried powder;
and adding a binder into the dried powder, and mixing to obtain raw material particles.
The specific mode for pressing the raw material particles to obtain the low dielectric medium semi-finished product raw material is as follows:
pressing and shaping the principle particles to obtain a shaped material;
and sequentially carrying out heat preservation, glue discharging and sintering on the sizing material to obtain a low dielectric medium semi-finished product.
Wherein the low dielectric semi-finished product comprises Ba 2 CaZn 2 Si 6 O 17 、Ba 2 CaMg 2 Si 6 O 17 And Ba 2 CaCo 2 Si 6 O 17 A material.
Wherein, passing Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder is opposite to the Ba through a general formula 2 CaZn 2 Si 6 O 17 Burdening to obtain burdening raw materials;
mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then sequentially performing ball milling and drying to obtain dried raw materials;
adding an adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
and sequentially carrying out heat preservation, glue removal and sintering on the pressed material to obtain the ceramic material.
Wherein, passing Ba 2 CaMg 2 Si 6 O 17 The concrete mode for preparing the ceramic material is as follows:
the drying powder is opposite to the Ba through a general formula 2 CaMg 2 Si 6 O 17 Burdening to obtain burdening raw materials;
mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then sequentially performing ball milling and drying to obtain dried raw materials;
adding an adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
and sequentially carrying out heat preservation, glue removal and sintering on the pressed material to obtain the ceramic material.
Wherein, passing Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder passes through the general formula Ba 2 CaZn 2 Si 6 O 17 Xwt% M (X is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively performing material preparation, ball milling, drying, granulation and compression molding, discharging glue at 725 deg.CSintering at-950 deg.C for 2-8 hr to obtain Ba 2 CaZn 2 Si 6 O 17 Xwt% M (0.5. Ltoreq. X. Ltoreq.10) LTCC material.
Wherein, passing Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder passes through the general formula Ba 2 CaMg 2 Si 6 O 17 Ywt% M (Y is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively carrying out material preparation, ball milling, drying, granulation and compression molding, discharging glue, and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaCo 2 Si 6 O 17 Ywt% M (0.5. Ltoreq. Y. Ltoreq.10) LTCC material.
In a second aspect, the invention provides a low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material, which is prepared by the preparation method of the low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material in the first aspect,
the low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material comprises BaCO 3 、CaCO 3 、ZnO、MgO、Co 2 O 3 And SiO2, wherein R of the low dielectric constant Ba-Ca-R-Si is Zn, mg or Co.
The invention relates to a low dielectric constant Ba-Ca-R-Si-based microwave dielectric ceramic material and a preparation method thereof.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of the preparation method of the low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material provided by the invention.
FIG. 2 is a flow chart of proportioning raw materials.
FIG. 3 is a flow chart of the processing of the pretreated feedstock to obtain feedstock particles.
FIG. 4 is a flow chart of the process of pressing the feedstock particles to obtain a low dielectric intermediate feedstock.
FIG. 5 is a signal passing through Ba 2 CaZn 2 Si 6 O 17 Flow chart of the ceramic material.
FIG. 6 by Ba 2 CaZn 2 Si 6 O 17 Flow chart of the ceramic material.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative and intended to explain the present invention and should not be construed as limiting the present invention.
Referring to fig. 1 to 6, in a first aspect, the present invention provides a method for preparing a low-k Ba-Ca-R-Si-based microwave dielectric ceramic material, comprising the following steps:
s1, proportioning raw materials to obtain proportioned raw materials;
s11, carrying out heat preservation treatment on ZnO and MgO to obtain heat preservation raw materials;
specifically, znO and MgO are pretreated at 400-800 ℃ for 2-4 hours before burdening to obtain heat-insulating raw materials.
S12, mixing the heat preservation raw material and BaCO 3 、CaCO 3 、Co 2 O 3 And SiO 2 Proportioning to obtain proportioning raw materials.
Specifically, dry raw material BaCO with purity more than or equal to 99 percent 3 、CaCO 3 、ZnO、MgO、Co 2 O 3 and SiO 2 the materials are respectively proportioned to obtain the proportioning raw materials.
S2, pretreating the proportioned raw materials to obtain pretreated raw materials;
and mixing the proportioning materials, zirconium balls and absolute ethyl alcohol, and then sequentially carrying out ball milling, drying, sieving and presintering to obtain the pretreated raw materials.
Specifically, the raw materials, zirconium balls and absolute ethyl alcohol are placed in a ball milling tank for ball milling according to a ratio of 1.
S3, processing the pretreated raw material to obtain raw material particles;
s31, mixing the pretreated raw materials with zirconium balls and absolute ethyl alcohol, and then sequentially performing ball milling and rod drying to obtain dried powder;
specifically, the pretreatment raw materials, zirconium balls and anhydrous ethanol water are mixed according to the proportion of 1; and drying the ball-milled slurry at 120-140 ℃ to obtain dried powder.
S32, adding a binder into the dried powder, and mixing to obtain raw material particles.
Specifically, the PVA binder is added into the dried powder body, and is uniformly mixed with the dried powder body for granulation.
S4, pressing the raw material particles to obtain a low dielectric semi-finished product raw material;
s41, pressing and shaping the principle particles to obtain a shaped material;
specifically, the raw material particles are pressed into cylinders with the diameter of 10-12mm and the height of 5-6 mm.
S42, sequentially carrying out heat preservation, glue removal and sintering on the sizing material to obtain a low dielectric medium semi-finished product.
Specifically, the pressed cylinder is insulated for 4 hours at 400-500 ℃ for glue removal, and the cylinder sample after glue removal is sintered for 2-8 hours in the atmosphere of 1000-1200 ℃ to obtain the low dielectric medium semi-finished product.
S5, preparing the ceramic material by using the low dielectric medium semi-finished product raw material.
The low dielectric semi-finished product comprises Ba 2 CaZn 2 Si 6 O 17 、Ba 2 CaMg 2 Si 6 O 17 And Ba 2 CaCo 2 Si 6 O 17 A material.
By Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
s501 according to the general formula of the powder, the Ba 2 CaZn 2 Si 6 O 17 Burdening to obtain burdening raw materials;
specifically, the powder is prepared by the general formula Ba 2 CaZn 2 Si 6 O 17 Xwt% of M (X is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, and the materials are respectively proportioned to obtain the batching raw materials.
S502, mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then performing ball milling and drying in sequence to obtain dried raw materials;
specifically, the raw materials are mixed with zirconium balls and anhydrous ethanol water according to the proportion of 1; and drying the slurry subjected to ball milling at 120-140 ℃ to obtain a dried raw material.
S503, adding an adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
specifically, the dried raw materials are added with a binder PVA and uniformly mixed with powder, and then granulation is carried out to obtain the product which is pressed and molded.
S504, sequentially carrying out heat preservation, glue removal and sintering on the pressing material to obtain the ceramic material.
Concretely, the pressing material is subjected to heat preservation at 400-500 ℃ for 4 hours, binder removal and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaZn 2 Si 6 O 17 Xwt% M (0.5. Ltoreq. X. Ltoreq.10) LTCC material.
By Ba 2 CaMg 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
s511 according to the general formula of the powder to the Ba 2 CaMg 2 Si 6 O 17 Burdening to obtain burdening raw materials;
specifically, the powder is prepared by the general formula Ba 2 CaMg 2 Si 6 O 17 Ywt% of M (Y is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, and the materials are respectively proportioned to obtain the batching raw materials.
S512, mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then sequentially performing ball milling and drying to obtain dried raw materials;
specifically, the raw materials are mixed with zirconium balls and anhydrous ethanol water according to the proportion of 1; and drying the ball-milled slurry at 120-140 ℃ to obtain a dried raw material.
S513, adding the adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
specifically, the dried raw materials are added with a binder PVA and uniformly mixed with powder, and then granulation is carried out to obtain the product which is pressed and molded.
And S514, sequentially carrying out heat preservation, glue removal and sintering on the pressed material to obtain the ceramic material.
Specifically, the pressing material is subjected to heat preservation at 400-500 ℃ for 4 hours, binder removal and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaMg 2 Si 6 O 17 Ywt% M (0.5. Ltoreq. Y. Ltoreq.10) LTCC material.
By Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder passes through the general formula Ba 2 CaZn 2 Si 6 O 17 Xwt% M (X is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively carrying out material preparation, ball milling, drying, granulation and compression molding, discharging glue, and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain the final productBa 2 CaZn 2 Si 6 O 17 Xwt% M (0.5. Ltoreq. X. Ltoreq.10) LTCC material.
The drying powder passes through the general formula Ba 2 CaMg 2 Si 6 O 17 Ywt% M (Y is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively carrying out material preparation, ball milling, drying, granulation and compression molding, discharging glue, and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaCo 2 Si 6 O 17 Ywt% M (0.5. Ltoreq. Y. Ltoreq.10) LTCC material.
By Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
in a second aspect, the invention provides a low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material, which is prepared by the preparation method of the low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material in the first aspect,
the low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material comprises BaCO 3 、CaCO 3 、ZnO、MgO、Co 2 O 3 And SiO2, wherein R of the low-dielectric-constant Ba-Ca-R-Si is Zn, mg or Co.
The raw material composition is BaCO 3 、CaCO 3 、ZnO、MgO、Co 2 O 3 、SiO 2 Of the chemical formula Ba 2 CaMg 2 Si 6 O 17 ,Ba 2 CaZn 2 Si 6 O 17 ,Ba 2 CaCo 2 Si 6 O 17 The raw material is represented by the chemical formula Ba 2 CaZn 2 Si 6 O 17 Compounding material, and preparing Ba by solid-phase sintering method 2 CaZn 2 Si 6 O 17 Microwave dielectric ceramic, ba 2 CaZn 2 Si 6 O 17 The sintering temperature is 1000-1200 ℃, the dielectric constant is 5.6-6.5, the Q x f is as high as 26064GHz, the temperature coefficient of the resonance frequency is-30 to-39, and the raw materials are prepared according to the chemical formula Ba 2 CaMg 2 Si 6 O 17 Compounding material, and preparing Ba by solid-phase sintering method 2 CaMg 2 Si 6 O 17 Microwave dielectric ceramic, ba 2 CaMg 2 Si 6 O 17 The sintering temperature of 1050-1200, the dielectric constant of 5.7-7.5, the Q multiplied by f is as high as 23574GHz, the temperature coefficient of resonance frequency is-49-70, and the raw materials are prepared according to the chemical formula Ba 2 CaCo 2 Si 6 O 17 Compounding material, and preparing Ba by solid-phase sintering method 2 CaCo 2 Si 6 O 17 The sintering temperature is 980-1200 deg.C, the dielectric constant is 5.6-8,Q xf up to 30376GHz, and the temperature coefficient of resonance frequency is-17-39.
Although the invention has been described with reference to specific embodiments and examples, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (11)
1. The preparation method of the low-dielectric-constant Ba-Ca-R-Si-based microwave dielectric ceramic material is characterized by comprising the following steps of:
proportioning the raw materials to obtain proportioned raw materials;
pretreating the proportioned raw materials to obtain pretreated raw materials;
processing the pretreated raw material to obtain raw material particles;
pressing the raw material particles to obtain a low dielectric semi-finished product raw material;
and preparing a ceramic material by using the low dielectric semi-finished product raw material.
2. The method of claim 1, wherein the low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material is prepared by a process comprising the steps of,
the specific mode of proportioning the raw materials to obtain the proportioned raw materials is as follows;
performing heat preservation treatment on ZnO and MgO to obtain heat preservation raw materials;
mixing the heat-insulating raw material and BaCO 3 、CaCO 3 、Co 2 O 3 And SiO 2 Proportioning to obtain proportioning raw materials.
3. The method for preparing a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 2,
the specific mode for preprocessing the proportioning raw materials to obtain the preprocessed raw materials is as follows:
and mixing the proportioning materials, zirconium balls and absolute ethyl alcohol, and then sequentially carrying out ball milling, drying, sieving and presintering to obtain the pretreated raw materials.
4. The method for preparing a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 3,
the specific mode for processing the pretreated raw material to obtain the raw material particles is as follows:
mixing the pretreated raw materials with zirconium balls and absolute ethyl alcohol, and then sequentially carrying out ball milling and drying to obtain dried powder;
and adding a binder into the dried powder, and mixing to obtain raw material particles.
5. The method of preparing a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material of claim 4,
the specific mode for pressing the raw material particles to obtain the low dielectric medium semi-finished product raw material is as follows:
pressing and shaping the principle particles to obtain a shaped material;
and sequentially carrying out heat preservation, glue discharging and sintering on the sizing material to obtain a low dielectric medium semi-finished product.
6. The method for preparing a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 5,
the low dielectric semi-finished product comprises Ba 2 CaZn 2 Si 6 O 17 、Ba 2 CaMg 2 Si 6 O 17 And Ba 2 CaCo 2 Si 6 O 17 A material.
7. The method of preparing a low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material of claim 6,
by Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder is opposite to the Ba through a general formula 2 CaZn 2 Si 6 O 17 Burdening to obtain burdening raw materials;
mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then sequentially performing ball milling and drying to obtain dried raw materials;
adding an adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
and sequentially carrying out heat preservation, glue removal and sintering on the pressed material to obtain the ceramic material.
8. The method for preparing a low-k Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 6,
by Ba 2 CaMg 2 Si 6 O 17 The concrete mode for preparing the ceramic material is as follows:
the drying powder is opposite to the Ba through a general formula 2 CaMg 2 Si 6 O 17 Burdening to obtain burdening raw materials;
mixing the ingredient raw materials, zirconium balls and anhydrous ethanol water, and then sequentially performing ball milling and drying to obtain dried raw materials;
adding an adhesive into the dried raw materials, mixing and pressing to obtain a pressed material;
and sequentially carrying out heat preservation, glue removal and sintering on the pressed material to obtain the ceramic material.
9. The method for preparing a low-k Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 6,
by Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder passes through the general formula Ba 2 CaZn 2 Si 6 O 17 Xwt% M (X is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively performing batching, ball milling, drying, granulating and compression molding, discharging glue, and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaZn 2 Si 6 O 17 Xwt% M (0.5. Ltoreq. X. Ltoreq.10) LTCC material.
10. The method for preparing a low-k Ba-Ca-R-Si based microwave dielectric ceramic material as claimed in claim 6,
by Ba 2 CaZn 2 Si 6 O 17 The specific mode for preparing the ceramic material is as follows:
the drying powder passes through the general formula Ba 2 CaMg 2 Si 6 O 17 Ywt% M (Y is more than or equal to 0.5 and less than or equal to 10), wherein M is BCB and LiF, respectively carrying out material preparation, ball milling, drying, granulation and compression molding, discharging glue, and sintering at 725-950 ℃ for 2-8 hours in atmospheric atmosphere to obtain Ba 2 CaCo 2 Si 6 O 17 Ywt% M (0.5. Ltoreq. Y. Ltoreq.10) LTCC material.
11. A low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material prepared by the method of claims 1-10,
the low dielectric constant Ba-Ca-R-Si based microwave dielectric ceramic material comprises BaCO 3 、CaCO 3 、ZnO、MgO、Co 2 O 3 And SiO2, wherein R of the low-dielectric-constant Ba-Ca-R-Si is Zn, mg or Co.
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