CN115278953A - Heating device and preparation method thereof - Google Patents

Heating device and preparation method thereof Download PDF

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Publication number
CN115278953A
CN115278953A CN202211030772.0A CN202211030772A CN115278953A CN 115278953 A CN115278953 A CN 115278953A CN 202211030772 A CN202211030772 A CN 202211030772A CN 115278953 A CN115278953 A CN 115278953A
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CN
China
Prior art keywords
heating
coating
layer
heating device
infrared coating
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Pending
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CN202211030772.0A
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Chinese (zh)
Inventor
刘宇嵘
谢方
李洪
李日红
周宏明
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Hainan Moore Brothers Technology Co Ltd
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Hainan Moore Brothers Technology Co Ltd
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Application filed by Hainan Moore Brothers Technology Co Ltd filed Critical Hainan Moore Brothers Technology Co Ltd
Priority to CN202211030772.0A priority Critical patent/CN115278953A/en
Publication of CN115278953A publication Critical patent/CN115278953A/en
Priority to PCT/CN2023/094429 priority patent/WO2024041045A1/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/40Heating elements having the shape of rods or tubes
    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24FSMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40Constructional details, e.g. connection of cartridges and battery parts
    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24FSMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46Shape or structure of electric heating means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/02Details

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  • Resistance Heating (AREA)

Abstract

The invention provides a preparation method of a heating device, which comprises the following steps: providing a substrate having a cavity; preparing an infrared coating on the outer surface of the substrate; and preparing a heating layer on the outer surface of the infrared coating, wherein the heating layer is a resistance film and completely covers the infrared coating. The heating layer in the heating device prepared by the invention has better temperature field uniformity, thickness uniformity and position precision, and the invention can improve the energy utilization rate of the infrared coating. The invention also provides a heating device.

Description

Heating device and preparation method thereof
Technical Field
The invention relates to the technical field of smoking set, in particular to a heating device and a preparation method thereof.
Background
Conventional smoking articles such as cigarettes and cigars are smoked during use by burning tobacco to produce an aerosol which is consumed by the individual during the burning process, which in combination with the nicotine active, produces many unhealthy constituents. Attempts have been made to provide alternatives to these tobacco-burning articles to reduce the hazards of smoking by creating products that release compounds such as nicotine without combustion. Examples of such products are so-called heat not burn products, which release active compounds like nicotine by heating the smoking article instead of burning, which will greatly reduce the content of tar, carbon monoxide etc. in the smoke as a result of not burning.
The existing smoking set which is heated at low temperature and is not combusted comprises a base body, an infrared coating positioned on the surface of the base body and a conductive circuit positioned on the surface of the infrared coating. The electrified conducting circuit generates heat and conducts the heat to the infrared coating, and infrared rays generated by heating the infrared coating can penetrate through the base body and heat the smoking article in the base body. At present, a silk-screen thick film technology is basically adopted when a conductive circuit is prepared, namely materials such as conductor paste, resistance paste or medium paste are transferred to an infrared coating by a silk-screen printing method, and then the conductive circuit is prepared by high-temperature sintering. However, when the conductive circuit is powered on, the temperature near the powered conductive circuit is high, and the temperatures of other positions are low, so that the phenomenon of uneven temperature field exists, and the conductive circuit prepared by adopting the silk-screen thick film technology has poor thickness and position accuracy and poor batch repeatability.
Disclosure of Invention
Therefore, a manufacturing method of a heating device capable of improving the temperature field uniformity, the thickness uniformity and the position accuracy of the conductive circuit is needed.
In addition, it is necessary to provide a heating device prepared by the above preparation method.
The invention provides a preparation method of a heating device on one hand, which comprises the following steps:
providing a substrate having a cavity;
preparing an infrared coating on the outer surface of the substrate; and
preparing a heating layer on the outer surface of the infrared coating, wherein the heating layer is a resistive film and completely covers the infrared coating.
In some embodiments, the heating layer is formed by magnetron sputtering, spray coating, multi-arc ion plating, and evaporation.
In some of these embodiments, the method of making the infrared coating includes at least one of screen printing, spray coating, and ink jet printing.
In some of these embodiments, after preparing the ir coating layer and before preparing the heating layer, the preparation method further comprises:
preparing a transition layer on the outer surface of the infrared coating.
In some of these embodiments, the method of making the transition layer includes at least one of screen printing, spray coating, and ink jet printing.
Another aspect of the present invention provides a heating device, including:
a substrate having a cavity;
an infrared coating attached to an outer surface of the substrate; and
the zone of heating, connect in on infrared coating's the surface, the zone of heating is the resistance film and covers completely infrared coating.
In some embodiments, the heating layer is made of at least one of silver palladium, chromium, silver, tungsten, silver palladium alloy, chromium alloy, silver alloy, and tungsten alloy.
In some embodiments, the substrate has a tubular structure, and the material of the substrate includes at least one of quartz, borosilicate glass, microcrystalline glass, and transparent ceramic.
In some of these embodiments, the heating device further comprises:
the transition layer is positioned between the infrared coating and the heating layer.
In some embodiments, the material of the transition layer includes at least one of glass glaze, silicon dioxide and aluminum oxide.
The heating layer is prepared on the outer surface of the infrared coating, the heating layer is a resistance film and plays a role of a conducting circuit, and compared with the conducting circuit prepared in the prior art, the heating layer prepared in the invention has better temperature field uniformity, thickness uniformity and position precision.
Drawings
Fig. 1 is a schematic structural diagram of a heating device according to a first embodiment of the present invention;
FIG. 2 is a partial cross-sectional view of the base of the heating device shown in FIG. 1 taken along line II-II;
FIG. 3 is a cross-sectional view after an infrared coating has been formed on the outer surface of the substrate shown in FIG. 2;
fig. 4 is a sectional view of a heating device obtained after a heating layer is prepared on the outer surface of the infrared coating layer shown in fig. 3;
fig. 5 is a schematic structural view of a heating device according to a first embodiment of the present invention;
FIG. 6 is a partial cross-sectional view along VI-VI of the base and infrared coating of the heating device shown in FIG. 5;
FIG. 7 is a cross-sectional view of the IR coating shown in FIG. 6 after a transition layer has been formed on the outer surface thereof;
fig. 8 is a sectional view of the heating device obtained after a heating layer is prepared on the outer surface of the transition layer shown in fig. 7.
Icon: 10-a substrate; 11-a chamber; 20. 21-infrared coating; 211-porous structure; 30-a heating layer; 40-a transition layer; 100. 200-heating device.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a first embodiment of the present invention provides a method for manufacturing a heating device, including the following steps:
in step S11, referring to fig. 2, the substrate 10 is provided.
In one embodiment, the substrate 10 is a tubular structure. Specifically, the substrate 10 may be a circular tube. In one embodiment, the material of the substrate 10 includes at least one of quartz, borosilicate glass, microcrystalline glass, and transparent ceramic. In another embodiment, the material of the substrate 10 may be other materials. The material of the substrate 10 is not limited in the present invention. In one embodiment, the substrate 10 is capable of withstanding high temperatures in excess of 800 ℃. I.e. the melting point of the matrix 10 is greater than 800 deg.c. In another embodiment, the melting point of the substrate 10 is greater than 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃, 1400 ℃, 1500 ℃, 1600 ℃, 1700 ℃, 1800 ℃, 1900 ℃ or 2000 ℃.
Wherein the substrate 10 has a cavity 11. Wherein smoking articles may be stored within the chamber 11. In particular, the smoking article may be tobacco.
In step S12, referring to fig. 3, an infrared coating 20 is formed on the outer surface of the substrate 10.
In one embodiment, the ir coating 20 can be prepared by screen printing, spray coating, or ink jet printing. It will be appreciated that the infrared coating 20 is attached to the outer surface of the substrate 10.
When the ir coating 20 is heated, the ir coating 20 increases in temperature to have thermal energy. The ir coating 20 can heat the tobacco product within the chamber 11 by applying heat energy in the form of ir radiation.
Of these, the ir coating 20 is typically selected to have a high ir emissivity, optionally, for example, a material containing tin oxide, with antimony (Sb) doped tin oxide being preferred as one choice of such material. Tin oxide acts as a conductive film, the carriers of which are mainly derived from crystal defects, i.e., oxygen vacancies and electrons provided by dopant impurities. SnO 2 The conductivity is obviously improved after doping elements such as Sb, and the like to form an n-type semiconductor, and Sb is doped with SnO 2 The semiconductor has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide). In addition, other SnO 2 The doping material further includes: F. ni, mn, mo, ce, cu, zn, ta, si, N, P, in, pd, bi, etc. That is, the infrared coating 20 may further include fluorine-doped tin oxide, nickel-doped tin oxide, manganese-doped tin oxide, molybdenum-doped tin oxide, cerium-doped tin oxide, copper-doped tin oxide, zinc-doped tin oxide, tantalum-doped tin oxide, silicon-doped tin oxide, nitrogen-doped tin oxide, phosphorus-doped tin oxide, indium-doped tin oxide, palladium-doped tin oxide, bismuth-doped tin oxide, and the like.
In step S13, referring to fig. 4, a heating layer 30 is prepared on the outer surface of the infrared coating layer 20, so as to obtain the heating device 100.
In one embodiment, the heating layer 30 can be prepared by magnetron sputtering, spray coating, multi-arc ion plating, or evaporation. It will be appreciated that the heater layer 30 is attached to the outer surface of the ir coating 20.
Wherein the heating layer 30 is a resistive film and completely covers the infrared coating layer 20. It is understood that the heating layer 30 has an integral layer structure.
In one embodiment, the material of the heating layer 30 includes at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy, and tungsten alloy. In another embodiment, the heating layer 30 may be made of other conductive materials with certain heat resistance. The material of the heating layer 30 is not limited in the present invention.
Wherein, the zone of heating 30 has excellent thermal stability and high reflectivity, just the thermal expansion coefficient of zone of heating 30 with the base member 10 and the thermal expansion coefficient phase-match of infrared coating 20, when infrared coating 20 produces heat, the stable in structure of zone of heating 30 can not appear obvious phenomenon such as crackle and drop.
It will be appreciated that the heating layer 30 acts as a conductive circuit, and that the ir-coating layer 20, when energized, generates heat and conducts it to the ir-coating layer 20, which ir-coating layer 20 heats the tobacco product in the chamber 11 in the form of ir radiation.
The preparation method provided by the first embodiment of the present invention prepares the heating layer 30 on the outer surface of the infrared coating 20, the heating layer 30 is a resistive film, the heating layer 30 functions as a conductive circuit, and compared with the conductive circuit prepared by the prior art, the heating layer 30 prepared by the first embodiment of the present invention has higher temperature field uniformity, thickness uniformity and position accuracy because the heating layer 30 completely covers the infrared coating 20. Meanwhile, since the heating layer 30 has a structure of a whole layer and completely covers the infrared coating layer 20, the heating layer 30 can reduce the energy radiated from the infrared coating layer 20, thereby improving the energy utilization rate of the infrared coating layer 20.
Referring again to fig. 1 and 4, the first embodiment of the present invention further provides a heating device 100, wherein the heating device 100 includes a substrate 10, an infrared coating layer 20 and a heating layer 30.
In one embodiment, the substrate 10 is a tubular structure. Specifically, the substrate 10 may be a circular tube. In one embodiment, the material of the substrate 10 includes at least one of quartz, borosilicate glass, microcrystalline glass, and transparent ceramic. In another embodiment, the material of the substrate 10 can be other materials. The material of the substrate 10 is not limited in the present invention. In one embodiment, the substrate 10 is capable of withstanding high temperatures in excess of 800 ℃. I.e. the melting point of the matrix 10 is greater than 800 deg.c. In another embodiment, the melting point of the substrate 10 is greater than 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃, 1400 ℃, 1500 ℃, 1600 ℃, 1700 ℃, 1800 ℃, 1900 ℃, or 2000 ℃.
Wherein the substrate 10 has a cavity 11. Wherein smoking articles may be stored within the chamber 11. In particular, the smoking article may be tobacco.
The ir coating 20 is attached to the outer surface of the substrate 10. When the ir coating 20 is heated, the ir coating 20 increases in temperature to have thermal energy. The ir coating 20 can heat the tobacco product within the chamber 11 by applying heat energy in the form of ir radiation.
The ir coating 20 is typically selected to have a high ir emissivity, optionally, for example, a material containing tin oxide, with antimony doped tin oxide being preferred as an alternative to this material. Tin oxide acts as a conductive film, the carriers of which are mainly derived from crystal defects, i.e., oxygen vacancies and electrons provided by dopant impurities. SnO 2 The conductivity is obviously improved after doping elements such as Sb, and the like to form an n-type semiconductor, and Sb is doped with SnO 2 The semiconductor has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide). In addition, other SnO 2 The doping material further includes: fluorine (F), nickel (Ni), manganese (Mn), molybdenum (Mo), cerium (Ce), copper (Cu), zinc (Zn), tantalum (Ta), silicon (Si), nitrogen (N), phosphorus (P), indium (In), palladium (Pd), bismuth (Bi), and the like. That is, the infrared coating 20 is made of fluorine-doped tin oxide, nickel-doped tin oxide, manganese-doped tin oxide, molybdenum-doped tin oxide, cerium-doped tin oxide, copper-doped tin oxide, zinc-doped tin oxide, tantalum-doped tin oxide, silicon-doped tin oxide, nitrogen-doped tin oxide, phosphorus-doped tin oxide, indium-doped tin oxide, palladium-doped tin oxide, bismuth-doped tin oxide, or the like.
The heating layer 30 is attached to the outer surface of the infrared coating layer 20. Wherein the heating layer 30 is a resistive film and completely covers the infrared coating layer 20. It is understood that the heating layer 30 has an integral layer structure. In one embodiment, the material of the heating layer 30 includes at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy, and tungsten alloy. In another embodiment, the heating layer 30 may be made of other conductive materials with certain heat-resistant properties. The material of the heating layer 30 is not limited in the present invention.
Wherein, the zone of heating 30 has excellent thermal stability and high reflectivity, just the thermal expansion coefficient of zone of heating 30 with the base member 10 and the thermal expansion coefficient phase-match of infrared coating 20, when infrared coating 20 produces heat, the stable in structure of zone of heating 30 can not appear obvious phenomenon such as crackle and drop.
It will be appreciated that the heating layer 30 acts as an electrical conductor, and that the ir coating 20, when energized, generates heat and conducts the heat to the ir coating 20, which ir coating 20 heats the tobacco product in the chamber 11 in the form of ir radiation.
The heating layer 30 in the heating device 100 provided by the first embodiment of the present invention is connected to the outer surface of the infrared coating layer 20, the heating layer 30 is a resistive film, the heating layer 30 functions as a conductive circuit, and compared with a conductive circuit prepared by the prior art, the heating layer 30 in the first embodiment of the present invention has higher temperature field uniformity, thickness uniformity and position accuracy because the heating layer 30 completely covers the infrared coating layer 20. Meanwhile, since the heating layer 30 has a whole-layer structure and completely covers the ir coating layer 20, the heating layer 30 can reduce the energy radiated from the ir coating layer 20, thereby improving the energy utilization of the ir coating layer 20.
However, in preparing the infrared coating, the inventors have found that the surface of the infrared coating prepared by the conventional technique and the present invention is generally rough and uneven, the infrared coating is porous, and the emissivity of the infrared coating is greater than or equal to 0.9. When the surface of the infrared coating is flat and has no porous structure, in the process of preparing the heating layer on the surface of the infrared coating, when particles vertically enter the surface of the infrared coating, the diffusion effect takes the dominant role, and the heating layer can grow into a uniform and compact structure; when the surface of the infrared coating is rough and has a porous structure, along with the increase of the incident angle of the particles, the shadow effect is enhanced and replaces the diffusion effect to take the leading role, the particles are blocked by the nano columns and the atomic clusters, and the diffusion is limited, the enhancement of the shadow effect can enable the incident particles to be easily deposited at the topmost end of the infrared coating, the heating layer becomes very loose, and the gaps among the nano columns are larger and larger, so that the phenomena of lower density, smaller binding force, poorer thickness uniformity, enhanced surface Raman scattering and the like can be easily generated in the deposition of the heating layer on the infrared coating with rough uneven surface. Therefore, the inventor further improves the first embodiment of the present invention to obtain a second embodiment.
Referring to fig. 5, the difference between the preparation method provided by the second embodiment of the present invention and the preparation method provided by the first embodiment is: after step S12, and before step S13, the preparation method further includes:
step S121: referring to fig. 6 and 7, a transition layer 40 is formed on the outer surface of the ir coating 21.
The surface of the infrared coating layer 21 has a concave-convex structure and a porous structure 211, and the transition layer 40 covers the concave-convex structure and a part of the transition layer 40 is filled in the porous structure 211. In one embodiment, the transition layer 40 completely covers the ir coating 21. In another embodiment, the transition layer 40 may not completely cover the ir coating 21, but only need to ensure that the ir coating 21 has a smooth surface.
In one embodiment, the transition layer 40 may be prepared by screen printing, spray coating, or ink jet printing.
In one embodiment, the material of the transition layer 40 includes at least one of glass glaze, silicon dioxide and aluminum oxide.
Wherein, the transition layer 40 is used for modifying the surface topography of the infrared coating 21 so as to improve the flatness of the infrared coating 21. Wherein the thermal expansion coefficient of the transition layer 40 is matched to the thermal expansion coefficient of the infrared coating layer 21, the thermal expansion coefficient of the base body 10 and the thermal expansion coefficient of the heating layer 30. In addition, the surface of the transition layer 40 is smooth and has no cracks after being sintered, the surface appearance is complete, and the transition layer 40 and the infrared coating 21 are not mutually corroded in the preparation process.
Accordingly, in step S13, referring to fig. 8, the heating layer 30 is prepared on the outer surface of the transition layer 40, resulting in the heating device 200.
The preparation method provided by the second embodiment of the present invention prepares the transition layer 40 on the surface of the infrared coating prepared by the conventional technology and the first embodiment of the present invention, so as to modify the surface morphology of the infrared coating 21, improve the smoothness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, the bonding force, the thickness uniformity and the surface diffuse reflection of the heating layer 30.
Referring again to fig. 5 and 8, the second embodiment of the present invention further provides a heating device 200, wherein the heating device 200 is different from the heating device 100 in that:
the heating device 200 further comprises a transition layer 40, the transition layer 40 being located between the infrared coating 21 and the heating layer 30.
The surface of the infrared coating 21 has a concave-convex structure and a porous structure 211, and the transition layer 40 covers the concave-convex structure and a part of the transition layer 40 is located in the porous structure 211. In one embodiment, the transition layer 40 completely covers the ir coating 21. In another embodiment, the transition layer 40 may not completely cover the ir coating 21, but only need to ensure that the ir coating 21 has a smooth surface. In one embodiment, the material of the transition layer 40 includes at least one of glass glaze, silicon dioxide and aluminum oxide.
Wherein, the transition layer 40 is used for modifying the surface topography of the infrared coating 21 so as to improve the flatness of the infrared coating 21. Wherein the thermal expansion coefficient of the transition layer 40 is matched to the thermal expansion coefficient of the infrared coating layer 21, the thermal expansion coefficient of the base body 10 and the thermal expansion coefficient of the heating layer 30. In addition, the surface of the transition layer 40 is smooth and has no cracks after being sintered, the surface appearance is complete, and the transition layer 40 and the infrared coating 21 are not mutually corroded in the preparation process.
The heating device 200 provided in the second embodiment of the present invention connects the transition layer 40 to the surface of the infrared coating in the conventional technology and the first embodiment of the present invention, so as to modify the surface topography of the infrared coating 21, improve the flatness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, the bonding force, the thickness uniformity, and the surface diffuse reflection of the heating layer 30.
The invention will now be further illustrated by means of examples.
Example 1
(1) And providing a quartz substrate, wherein the quartz substrate is of a tubular structure and can resist the high temperature of more than 800 ℃.
(2) And preparing the antimony doped tin oxide infrared coating on the outer surface of the quartz substrate by an ink-jet printing method.
(3) And preparing a silver heating layer on the outer surface of the antimony-doped tin oxide infrared coating by a magnetron sputtering method to obtain the heating device.
Example 2
(1) And providing a quartz substrate which is of a tubular structure and can resist the high temperature of over 800 ℃.
(2) And preparing the antimony doped tin oxide infrared coating on the outer surface of the quartz substrate by an ink-jet printing method. Wherein, the surface of the antimony doped tin oxide infrared coating has a concave-convex structure and a porous structure.
(3) And preparing a glass glaze transition layer on the outer surface of the antimony-doped tin oxide infrared coating by a spraying method, so that the glass glaze transition layer covers the concave-convex structure and part of the glass glaze transition layer is filled in the porous structure.
(4) And preparing a silver heating layer on the outer surface of the glass glaze transition layer by a magnetron sputtering method to obtain the heating device.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A preparation method of a heating device is characterized by comprising the following steps:
providing a substrate having a cavity;
preparing an infrared coating on the outer surface of the substrate; and
preparing a heating layer on the outer surface of the infrared coating, wherein the heating layer is a resistive film and completely covers the infrared coating.
2. A method of making a heating device of claim 1, wherein the method of making the heating layer comprises at least one of magnetron sputtering, spray coating, multi-arc ion plating, and evaporation.
3. A method of making a heating device according to claim 1, wherein the method of making the ir coating comprises at least one of screen printing, spray coating, and ink jet printing.
4. A method for producing a heating device according to any one of claims 1 to 3, wherein after producing the infrared coating layer and before producing the heating layer, the production method further comprises:
preparing a transition layer on the outer surface of the infrared coating.
5. A method of making a heating device of claim 4, wherein the method of making the transition layer comprises at least one of screen printing, spray coating, and ink jet printing.
6. A heating device, comprising:
a substrate having a cavity;
an infrared coating attached to the outer surface of the substrate; and
the zone of heating, connect in on infrared coating's the surface, the zone of heating is the resistance film and covers completely infrared coating.
7. The heating device of claim 6, wherein the heating layer comprises at least one of silver palladium, chromium, silver, tungsten, silver palladium alloy, chromium alloy, silver alloy, and tungsten alloy.
8. The heating device of claim 6, wherein the substrate is a tubular structure, and the substrate comprises at least one of quartz, borosilicate glass, microcrystalline glass, and transparent ceramic.
9. A heating device as claimed in any of claims 6 to 8, characterized in that the heating device further comprises:
the transition layer is positioned between the infrared coating and the heating layer.
10. A heating device as claimed in claim 9, wherein the transition layer comprises at least one of glass frit, silica and alumina.
CN202211030772.0A 2022-08-26 2022-08-26 Heating device and preparation method thereof Pending CN115278953A (en)

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CN202211030772.0A CN115278953A (en) 2022-08-26 2022-08-26 Heating device and preparation method thereof
PCT/CN2023/094429 WO2024041045A1 (en) 2022-08-26 2023-05-16 Heating device and preparation method therefor

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2024041045A1 (en) * 2022-08-26 2024-02-29 海南摩尔兄弟科技有限公司 Heating device and preparation method therefor

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EP3935973A4 (en) * 2019-03-07 2022-03-16 O-Net Automation Technology (Shenzhen) Limited Electronic cigarette atomization assembly and manufacturing method therefor
CN113080521A (en) * 2019-12-23 2021-07-09 深圳市合元科技有限公司 Heater and smoking set comprising same
CN113519907A (en) * 2020-04-13 2021-10-22 深圳市合元科技有限公司 Heater and smoking set comprising same
CN114158786A (en) * 2021-11-26 2022-03-11 深圳麦克韦尔科技有限公司 Heating element and aerosol-generating device
CN114158785A (en) * 2021-11-26 2022-03-11 深圳麦克韦尔科技有限公司 Heating element and aerosol-generating device
CN114304749B (en) * 2021-12-31 2024-08-09 深圳麦时科技有限公司 Heating non-combustion aerosol forming device and heating element thereof
CN218920639U (en) * 2022-08-26 2023-04-25 海南摩尔兄弟科技有限公司 Heating device
CN115278953A (en) * 2022-08-26 2022-11-01 海南摩尔兄弟科技有限公司 Heating device and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024041045A1 (en) * 2022-08-26 2024-02-29 海南摩尔兄弟科技有限公司 Heating device and preparation method therefor

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