CN115268530A - Series-connection thyristor temperature acquisition system and method based on DVR - Google Patents
Series-connection thyristor temperature acquisition system and method based on DVR Download PDFInfo
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- CN115268530A CN115268530A CN202210843431.9A CN202210843431A CN115268530A CN 115268530 A CN115268530 A CN 115268530A CN 202210843431 A CN202210843431 A CN 202210843431A CN 115268530 A CN115268530 A CN 115268530A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 238000007405 data analysis Methods 0.000 claims abstract description 27
- 238000012544 monitoring process Methods 0.000 claims abstract description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000002457 bidirectional effect Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 3
- 238000013021 overheating Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
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- 238000005070 sampling Methods 0.000 description 1
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- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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Abstract
The invention relates to a series connection silicon controlled rectifier temperature acquisition system and a method based on a DVR, belonging to the field of temperature control systems; a series thyristor temperature acquisition system and method based on DVR comprises: a silicon controlled rectifier unit; the thyristor unit includes: a three-phase silicon controlled NTC and a temperature control module; the temperature control module includes: the dynamic voltage restorer comprises a signal acquisition circuit, a conversion circuit, a fan control circuit, a data analysis circuit and a gating circuit, wherein the bidirectional thyristor is subjected to real-time temperature acquisition and monitoring in a dynamic voltage restorer device DVR, and the fan controls heat dissipation; the controllable silicon is connected between a power grid and a user load in series, so that the temperature of the system is monitored in real time, the stability and the safety of the system are obviously improved, the service life of the fan is prolonged, the circuit cost is reduced, a single-path AD port is used for monitoring the temperature value of the three-phase controllable silicon, and AD resources are reduced.
Description
Technical Field
The invention relates to a series connection silicon controlled rectifier temperature acquisition system and method based on a DVR, and belongs to the field of temperature control systems.
Background
With the increasing of the operating speed, the power consumption and temperature of the microprocessor are increasing continuously, how to make the processor operate safely, improve the reliability of the system, and prevent the processor from being burned out, such as a dead halt, a blue screen, repeated restarting and even a repeated restart, which are caused by overheating, is not only a dilemma faced by the processor, but also an important subject faced by the design of the motherboard. For this reason, intel proposes a concept of a Temperature Monitor (TM), which aims to increase the stability and safety of the processor by performing temperature control and overheating protection on the processor.
The current temperature control methods include the following two methods:
1. and (3) not performing temperature control treatment on the controlled silicon: forced air cooling by using a fan, namely the existing air cooling;
2. sampling a temperature control switch: the temperature of the controllable silicon is adjusted by adopting a temperature control switch,
(1) Adopting forced air cooling: when the current of load end is very big, when the silicon controlled rectifier temperature appears unusually, equipment can't in time alarm processing, may cause the rear end equipment outage to can't realize the DVR function, then the fan long-time work rerun state also is very big consumption to the life-span of fan, has increased useless power consumption simultaneously.
(2) A temperature control switch is adopted: when the scheme is adopted, the fan can be effectively prevented from running for a long time, but the scheme can not acquire and monitor the temperature of the thyristor in the DVR equipment and can not effectively avoid the abnormal state of the thyristor.
Disclosure of Invention
The purpose of the invention is as follows: the system and the method for acquiring the temperature of the series-connected silicon controlled rectifier based on the DVR are provided, and the problems mentioned above are solved.
The technical scheme is as follows: in a first aspect, a series thyristor temperature acquisition system based on a DVR is provided, which comprises:
the silicon controlled rectifier unit is connected between a power grid and a user load in series and used for monitoring the temperature in real time;
the thyristor unit includes: the temperature control module is connected with the three-phase silicon controlled NTC;
the temperature control module includes:
the signal acquisition circuit is connected with the input interface of the three-phase silicon controlled NTC by using a temperature sensor;
the input end of the conversion circuit is connected with the output end of the signal acquisition circuit, and the NTC signal is converted into a voltage signal;
the fan control circuit is used for setting a voltage threshold according to the resistance curve of the temperature sensor received in the conversion circuit and controlling the fan to start and stop;
the data analysis circuit compares the voltage signals output by the conversion circuit and converts the voltage signals into digital signals to output;
and the gating circuit receives the digital signals output by the data analysis circuit, screens out the maximum temperature value in the three-phase silicon controlled NTC through the digital circuit, and outputs the screened signals to the superior controller.
In a further embodiment, the input end of the silicon controlled rectifier unit is connected with a three-phase power supply, the output end of the silicon controlled rectifier unit is connected with an inverter unit and a load, a circuit breaker is arranged on the three-phase power supply to protect a circuit, the input end of the inverter unit is connected with a super capacitor, the input end of the super capacitor is connected with a pre-charging unit, and the input end of the pre-charging unit is connected with the three-phase power supply.
In a further embodiment, the signal acquisition circuit comprises: temperature sensor, its input is connected three-phase silicon controlled NTC's input interface, just temperature sensor adopts negative temperature coefficient, and inside is equipped with resistance R11, resistance R21 and resistance R31, and the temperature is higher, and resistance R11, resistance R21 and resistance R31's resistance is lower more, resistance R11, resistance R21 and resistance R31's one end ground connection, the other end with three-phase silicon controlled NTC's input interface connection and output signal.
In a further embodiment, the conversion circuit comprises: the circuit comprises a diode D101, a diode D102, a diode D103, a resistor R4, a resistor R114, a comparator U134-D and a resistor R5; the diode D101, the diode D102 and the diode D103 are connected in parallel, signals are input to anodes of the diode D101, the diode D102 and the diode D103, cathodes of the diode D101, the diode D102 and the diode D103 are simultaneously connected with one end of the resistor R2 and an inverting input end of the comparator U134-D and output working voltage, a non-inverting input end of the comparator U134-D is simultaneously connected with one end of the resistor R114 and one end of the resistor R4, the other end of the resistor R2 is grounded, voltage is output from the other end of the resistor R4, the other end of the resistor R114 is grounded, signals are output from an output end of the comparator U134-D and are connected with one end of the resistor R5, and voltage is output from the other end of the resistor R5.
In a further embodiment, the data analysis circuit comprises: the first comparison branch, the second comparison branch and the third comparison branch; the first comparison branch, the second comparison branch and the third comparison branch are connected in parallel;
the one comparing branch comprises: the circuit comprises a comparator U134-A and a resistor R12, wherein the non-inverting input end and the inverting input end of the comparator U134-A are connected with the conversion circuit, the output end of the comparator U134-A is connected with one end of the resistor R12 and outputs a signal, and the other end of the resistor R12 outputs voltage;
the second comparing branch comprises: the comparator U134-B and the resistor R22 are connected, the non-inverting input end and the inverting input end of the comparator U134-B are connected with the conversion circuit, the output end of the comparator U134-B is connected with one end of the resistor R22 and outputs a signal, and the other end of the resistor R22 outputs voltage;
the third comparison branch comprises: the circuit comprises a comparator U134-C and a resistor R32, wherein the non-inverting input end and the inverting input end of the comparator U134-C are connected with the conversion circuit, the output end of the comparator U134-C is connected with one end of the resistor R32 and outputs signals, and the other end of the resistor R32 outputs voltage.
In a further embodiment, the gating circuit includes: the circuit comprises a decoder U104, a photoelectric coupler U122, a photoelectric coupler U101, a photoelectric coupler U102, a resistor R110, a resistor R111, a resistor R112, a resistor R109, a resistor R106, a resistor R191, a diode D104, a diode D111, a diode D105, a diode D110, a diode D108, a diode D106, a diode D109, a diode D112, a resistor 103, a resistor R107 and a resistor R123;
one end of each of the resistor 103, the resistor R107 and the resistor R123 is connected to the decoder U104, the other end of the resistor R103 is connected to the other end of the resistor R107 and grounded, the other end of the resistor R123 outputs a voltage, the signal input end of the decoder is connected to the output end of the data analysis circuit, the cathodes of the diode D104, the diode D111, the diode D105, the diode D110, the diode D108, the diode D106, the diode D109 and the diode D112 are connected to the decoder U104, the positive input end of the photocoupler U122 is connected to one end of the resistor R110, the negative input end of the photocoupler U122 is connected to one end of the resistor R191, the anodes of the diode D110, the diode D112 and the diode D106, and the other end of the resistor R191 is connected to the other end of the resistor R110 and outputs a voltage;
the positive input end of the photoelectric coupler U101 is simultaneously connected with one end of the resistor R111, the negative input end of the photoelectric coupler U122 is simultaneously connected with one end of the resistor R106, the anodes of the diode D109 and the diode D108, and the other end of the resistor R106 is connected with the other end of the resistor R111 and outputs voltage;
the positive input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R112, the negative input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R109, the anodes of the diode D111, the diode D104 and the diode D105, and the other end of the resistor R109 is connected with the other end of the resistor R112 and outputs voltage; and output signals are output to the superior controller in parallel among output ends of the photoelectric coupler U122, the photoelectric coupler U101 and the photoelectric coupler U102.
In a second aspect, a method for acquiring the temperature of a series-connected thyristor based on a DVR (digital video recorder) comprises the following steps:
and 5, receiving the digital signals output by the data analysis circuit by the gating circuit, and transmitting the maximum temperature value in the three screened three-phase silicon controlled rectifiers NTC to a superior controller through a signal acquisition channel.
In a further embodiment, in step 3, since the three-phase thyristor NTC is resistive, it forms a voltage division with the resistor R11, the resistor R21, and the resistor R31, respectively, to generate the voltage signals T-C, T-B, and T-a, which become larger with the temperature increase.
In a further embodiment, in step 4, the voltage signals T-C, T-B and T-a output by the conversion circuit are isolated by the diode D101, the diode D102 and the diode D103, the higher voltage in the 3-point is compared with the voltage division signal in the middle of the non-inverting input terminal of the comparator, wherein the resistor R4 and the resistor R114 divide the voltage, and when the negative voltage of the comparator U134-D is greater than the positive voltage, the fan is controlled to rotate, otherwise, the fan is stopped;
meanwhile, voltage signals T-C, T-B and T-A output by the conversion circuit are input into the data analysis circuit, the three voltage signals are converted into logic sum 1 by the comparator U134-A, the comparator U134-B and the comparator U134-C between every two voltage signals, and three digital signals D-A, D _ B and D _ C are generated.
In a further embodiment, three digital signals D-a, D _ B and D _ C are connected to a decoder U104 in the gating circuit, channel distribution is performed on an output port of the decoder U104, and working states of a photoelectric coupler U122, a photoelectric coupler U101 and a photoelectric coupler U102 are controlled, so that dynamic acquisition is realized, a three-phase thyristor temperature value is monitored and uploaded to an upper-level controller.
Has the advantages that: the invention relates to a series connection silicon controlled rectifier temperature acquisition system and a method based on a DVR, belonging to the field of temperature control systems; a series thyristor temperature acquisition system and method based on DVR comprises: a silicon controlled unit; the thyristor unit includes: three-phase silicon controlled NTC and temperature control module; the temperature control module includes: the dynamic voltage restorer comprises a signal acquisition circuit, a conversion circuit, a fan control circuit, a data analysis circuit and a gating circuit, wherein the bidirectional thyristor is subjected to real-time temperature acquisition and monitoring in a dynamic voltage restorer device DVR, and the fan controls heat dissipation; the controllable silicon is connected between a power grid and a user load in series, so that the temperature of the system is monitored in real time, the stability and the safety of the system are obviously improved, the service life of the fan is prolonged, the circuit cost is reduced, a single-path AD port is used for monitoring the temperature value of the three-phase controllable silicon, and AD resources are reduced.
Drawings
Fig. 1 is a diagram of the thyristor DVR system position of the present invention.
Fig. 2 is a functional diagram of a thyristor temperature acquisition circuit of the invention.
Fig. 3 is a schematic diagram of a signal acquisition circuit of the present invention.
Fig. 4 is a schematic diagram of a conversion circuit of the present invention.
FIG. 5 is a schematic diagram of a data analysis circuit of the present invention.
Fig. 6 is a schematic diagram of the gating circuit of the present invention.
FIG. 7 is a table of decoder values of the present invention.
FIG. 8 is a logic transition diagram of the present invention.
Fig. 9 is a flow chart of a method of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details; in other instances, well-known features have not been described in order to avoid obscuring the invention.
Example 1:
as shown in fig. 2, a series thyristor temperature acquisition system based on DVR includes:
the silicon controlled rectifier unit is connected between a power grid and a user load in series and used for monitoring the temperature in real time;
the thyristor unit includes: the temperature control module is connected with the three-phase silicon controlled NTC;
the temperature control module includes:
the signal acquisition circuit is connected with the input interface of the three-phase silicon controlled NTC by using a temperature sensor;
the input end of the conversion circuit is connected with the output end of the signal acquisition circuit, and the NTC signal is converted into a voltage signal;
the fan control circuit is used for setting a voltage threshold according to the resistance curve of the temperature sensor received by the conversion circuit and controlling the fan to start and stop;
the data analysis circuit compares the voltage signals output by the conversion circuit and converts the voltage signals into digital signals to be output;
and the gating circuit receives the digital signals output by the data analysis circuit, screens out the maximum temperature value in the three-phase silicon controlled NTC through the digital circuit, and outputs the screened signals to the superior controller.
In one embodiment, as shown in fig. 1, an input end of the thyristor unit is connected to a three-phase power supply, an output end of the thyristor unit is connected to an inverter unit and a load, a circuit breaker is arranged on the three-phase power supply to protect a circuit, an input end of the inverter unit is connected to a super capacitor, an input end of the super capacitor is connected to a pre-charging unit, and an input end of the pre-charging unit is connected to the three-phase power supply.
In one embodiment, as shown in fig. 3, the signal acquisition circuit includes: temperature sensor, its input is connected three-phase silicon controlled rectifier NTC's input interface, just temperature sensor adopts negative temperature coefficient, and inside is equipped with resistance R11, resistance R21 and resistance R31, and the temperature is higher, and resistance R11, resistance R21 and resistance R31's resistance is lower more, resistance R11, resistance R21 and resistance R31's one end ground connection, the other end and three-phase silicon controlled rectifier NTC's input interface connection and output signal.
In one embodiment, as shown in fig. 4, the conversion circuit includes: the circuit comprises a diode D101, a diode D102, a diode D103, a resistor R4, a resistor R114, a comparator U134-D and a resistor R5; the diode D101, the diode D102 and the diode D103 are connected in parallel, signals are input to anodes of the diode D101, the diode D102 and the diode D103, cathodes of the diode D101, the diode D102 and the diode D103 are simultaneously connected with one end of the resistor R2 and an inverting input end of the comparator U134-D and output working voltage, a non-inverting input end of the comparator U134-D is simultaneously connected with one end of the resistor R114 and one end of the resistor R4, the other end of the resistor R2 is grounded, voltage is output from the other end of the resistor R4, the other end of the resistor R114 is grounded, signals are output from an output end of the comparator U134-D and are connected with one end of the resistor R5, and voltage is output from the other end of the resistor R5.
In one embodiment, as shown in fig. 5, the data analysis circuit includes: the first comparison branch, the second comparison branch and the third comparison branch; the first comparison branch, the second comparison branch and the third comparison branch are connected in parallel;
the comparison branch comprises: the circuit comprises a comparator U134-A and a resistor R12, wherein the non-inverting input end and the inverting input end of the comparator U134-A are connected with the conversion circuit, the output end of the comparator U134-A is connected with one end of the resistor R12 and outputs a signal, and the other end of the resistor R12 outputs voltage;
the second comparing branch comprises: the output end of the comparator U134-B is connected with one end of the resistor R22 and outputs a signal, and the other end of the resistor R22 outputs voltage;
the third comparing branch comprises: the circuit comprises a comparator U134-C and a resistor R32, wherein the non-inverting input end and the inverting input end of the comparator U134-C are connected with the conversion circuit, the output end of the comparator U134-C is connected with one end of the resistor R32 and outputs signals, and the other end of the resistor R32 outputs voltage.
In one embodiment, as shown in fig. 6, the gating circuit includes: the circuit comprises a decoder U104, a photoelectric coupler U122, a photoelectric coupler U101, a photoelectric coupler U102, a resistor R110, a resistor R111, a resistor R112, a resistor R109, a resistor R106, a resistor R191, a diode D104, a diode D111, a diode D105, a diode D110, a diode D108, a diode D106, a diode D109, a diode D112, a resistor 103, a resistor R107 and a resistor R123;
one end of each of the resistor 103, the resistor R107 and the resistor R123 is connected to the decoder U104, the other end of the resistor R103 is connected to the other end of the resistor R107 and grounded, the other end of the resistor R123 outputs a voltage, the signal input end of the decoder is connected to the output end of the data analysis circuit, the cathodes of the diode D104, the diode D111, the diode D105, the diode D110, the diode D108, the diode D106, the diode D109 and the diode D112 are connected to the decoder U104, the positive input end of the photocoupler U122 is connected to one end of the resistor R110, the negative input end of the photocoupler U122 is connected to one end of the resistor R191, the anodes of the diode D110, the diode D112 and the diode D106, and the other end of the resistor R191 is connected to the other end of the resistor R110 and outputs a voltage;
the positive input end of the photoelectric coupler U101 is simultaneously connected with one end of the resistor R111, the negative input end of the photoelectric coupler U122 is simultaneously connected with one end of the resistor R106, the anodes of the diode D109 and the diode D108, and the other end of the resistor R106 is connected with the other end of the resistor R111 and outputs voltage;
the positive input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R112, the negative input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R109, the anodes of the diode D111, the diode D104 and the diode D105, and the other end of the resistor R109 is connected with the other end of the resistor R112 and outputs voltage; and output signals are output to the superior controller in parallel among output ends of the photoelectric coupler U122, the photoelectric coupler U101 and the photoelectric coupler U102.
Example 2:
as shown in fig. 9, a DVR-based series thyristor temperature acquisition method includes the following steps:
and 5, receiving the digital signals output by the data analysis circuit by the gating circuit, and transmitting the maximum temperature value in the three selected three-phase silicon controlled NTC to a superior controller through a signal acquisition channel.
In one embodiment, as shown in fig. 3, in step 3, since the three-phase thyristor NTC is resistive, it forms a voltage division with the resistor R11, the resistor R21, and the resistor R31, respectively, to generate the voltage signals T-C, T-B, and T-a, which become larger as the temperature increases.
In one embodiment, as shown in fig. 4 and 5, in step 4, the voltage signals T-C, T-B and T-a output by the conversion circuit are isolated by the diode D101, the diode D102 and the diode D103, the higher voltage in the 3-point is compared with the voltage division signal in the non-inverting input of the comparator, wherein the resistor R4 and the resistor R114 divide the voltage, and when the negative voltage of the comparator U134-D is greater than the positive voltage, the fan is controlled to rotate, otherwise, the fan stops;
meanwhile, voltage signals T-C, T-B and T-A output by the conversion circuit are input into the data analysis circuit, the three voltage signals are converted into logic sum 1 by the comparator U134-A, the comparator U134-B and the comparator U134-C between every two voltage signals, and three digital signals D-A, D _ B and D _ C are generated.
In one embodiment, as shown in fig. 6, three digital signals D-a, D _ B and D _ C are connected to the decoder U104 in the gating circuit, and channel distribution is performed on the output port of the decoder U104, and the operating states of the photocoupler U122, the photocoupler U101 and the photocoupler U102 are controlled, so that dynamic collection is realized, and the three-phase thyristor temperature value is monitored and uploaded to the superior controller.
In one embodiment, as shown in FIG. 8, when T-A > T-B, D _ A is logic "1", T-A > T-C, and D _ A is logic "1", it can be reflected that the SCR temperature value received by CN111 is the maximum, so that the circuit can generate D-A, D-B and D-C3 digital signals.
In one embodiment, as shown in fig. 7, the gating circuit screens out the maximum temperature value of three-phase thyristors through a digital circuit, connects the screened signal acquisition channel to a superior controller, and accesses the decoder U104 through D-a, D-B and D-C, and can perform channel allocation on the output port of the decoder U104 and control the working states of the photocoupler U122, photocoupler U101 and photocoupler U102 through the truth table of the gating circuit as shown in fig. 7 and the D-a, D-B and D-C state diagrams, thereby realizing dynamic acquisition and monitoring the temperature value of the three-phase thyristors; example (c): when the temperature of the A-phase thyristor is highest, the secondary side of the photoelectric coupler U122 is conducted, the CN107 and the CN103 are connected in series, and the NTC value connected with the CN103 is uploaded to the superior controller through the CN 107.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the embodiments, and various equivalent changes can be made to the technical solution of the present invention within the technical idea of the present invention, and these equivalent changes are within the protection scope of the present invention.
Claims (10)
1. The utility model provides a based on DVR series connection silicon controlled rectifier temperature acquisition system which characterized in that includes:
the silicon controlled rectifier unit is connected between a power grid and a user load in series and used for monitoring the temperature in real time;
the thyristor unit includes: the temperature control module is connected with the three-phase silicon controlled NTC;
the temperature control module includes:
the signal acquisition circuit is connected with the input interface of the three-phase silicon controlled NTC by using a temperature sensor;
the input end of the conversion circuit is connected with the output end of the signal acquisition circuit, and the NTC signal is converted into a voltage signal;
the fan control circuit is used for setting a voltage threshold according to the resistance curve of the temperature sensor received by the conversion circuit and controlling the fan to start and stop;
the data analysis circuit compares the voltage signals output by the conversion circuit and converts the voltage signals into digital signals to output;
and the gating circuit receives the digital signals output by the data analysis circuit, screens out the maximum temperature value in the three-phase silicon controlled NTC through the digital circuit, and outputs the screened signals to the superior controller.
2. The series connection type SCR temperature collection system based on DVR of claim 1, wherein the SCR unit has an input terminal connected to a three-phase power supply, an output terminal connected to an inverter unit and a load, and a circuit breaker for protecting the three-phase power supply is provided on the three-phase power supply, the inverter unit has an input terminal connected to a super capacitor, the super capacitor has an input terminal connected to a pre-charging unit, and the pre-charging unit has an input terminal connected to the three-phase power supply.
3. The DVR-based series thyristor temperature acquisition system of claim 1,
the signal acquisition circuit includes: temperature sensor, its input is connected three-phase silicon controlled rectifier NTC's input interface, just temperature sensor adopts negative temperature coefficient, and inside is equipped with resistance R11, resistance R21 and resistance R31, and the temperature is higher, and resistance R11, resistance R21 and resistance R31's resistance is lower more, resistance R11, resistance R21 and resistance R31's one end ground connection, the other end and three-phase silicon controlled rectifier NTC's input interface connection and output signal.
4. The DVR-based series thyristor temperature acquisition system of claim 1,
the conversion circuit includes: the circuit comprises a diode D101, a diode D102, a diode D103, a resistor R4, a resistor R114, a comparator U134-D and a resistor R5; diode D101, diode D102, diode D103 are parallelly connected, and the equal input signal in positive pole, diode D101, diode D102, diode D103's negative pole simultaneously with resistance R2's one end with comparator U134-D's inverting input end is connected and is exported operating voltage, comparator U134-D's non inverting input end simultaneously with resistance R114's one end with resistance R4's one end is connected, resistance R2's the other end ground connection, resistance R4's other end output voltage, resistance R114's the other end ground connection, comparator U134-D's output signal and with resistance R5's one end is connected, resistance R5's the other end output voltage.
5. The DVR-based series thyristor temperature acquisition system of claim 1,
the data analysis circuit includes: the first comparison branch, the second comparison branch and the third comparison branch; the first comparison branch, the second comparison branch and the third comparison branch are connected in parallel;
the one comparing branch comprises: the output end of the comparator U134-A is connected with one end of the resistor R12 and outputs a signal, and the other end of the resistor R12 outputs voltage;
the second comparison branch comprises: the comparator U134-B and the resistor R22 are connected, the non-inverting input end and the inverting input end of the comparator U134-B are connected with the conversion circuit, the output end of the comparator U134-B is connected with one end of the resistor R22 and outputs a signal, and the other end of the resistor R22 outputs voltage;
the third comparing branch comprises: the circuit comprises a comparator U134-C and a resistor R32, wherein the non-inverting input end and the inverting input end of the comparator U134-C are connected with the conversion circuit, the output end of the comparator U134-C is connected with one end of the resistor R32 and outputs signals, and the other end of the resistor R32 outputs voltage.
6. The DVR-based series thyristor temperature acquisition system of claim 1,
the gating circuit includes: the circuit comprises a decoder U104, a photoelectric coupler U122, a photoelectric coupler U101, a photoelectric coupler U102, a resistor R110, a resistor R111, a resistor R112, a resistor R109, a resistor R106, a resistor R191, a diode D104, a diode D111, a diode D105, a diode D110, a diode D108, a diode D106, a diode D109, a diode D112, a resistor 103, a resistor R107 and a resistor R123;
one end of each of the resistor 103, the resistor R107 and the resistor R123 is connected to the decoder U104, the other end of the resistor R103 is connected to the other end of the resistor R107 and grounded, the other end of the resistor R123 outputs a voltage, the signal input end of the decoder is connected to the output end of the data analysis circuit, the cathodes of the diode D104, the diode D111, the diode D105, the diode D110, the diode D108, the diode D106, the diode D109 and the diode D112 are connected to the decoder U104, the positive input end of the photocoupler U122 is connected to one end of the resistor R110, the negative input end of the photocoupler U122 is connected to one end of the resistor R191, the anodes of the diode D110, the diode D112 and the diode D106, and the other end of the resistor R191 is connected to the other end of the resistor R110 and outputs a voltage;
the positive input end of the photoelectric coupler U101 is simultaneously connected with one end of the resistor R111, the negative input end of the photoelectric coupler U122 is simultaneously connected with one end of the resistor R106, the anodes of the diode D109 and the diode D108, and the other end of the resistor R106 is connected with the other end of the resistor R111 and outputs voltage;
the positive input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R112, the negative input end of the photoelectric coupler U102 is simultaneously connected with one end of the resistor R109, the anodes of the diode D111, the diode D104 and the diode D105, and the other end of the resistor R109 is connected with the other end of the resistor R112 and outputs a voltage; and output signals are output to a superior controller in parallel among output ends of the photoelectric coupler U122, the photoelectric coupler U101 and the photoelectric coupler U102.
7. A series connection silicon controlled rectifier temperature acquisition method based on a DVR is characterized by comprising the following steps:
step 1, electrifying a power supply, inputting a three-phase power supply into a silicon controlled unit through a breaker, working the three-phase silicon controlled NTC at the moment, and further working a temperature control module connected with the three-phase silicon controlled NTC;
in the signal acquisition circuit, a temperature sensor is connected with three-phase silicon controlled NTC input interfaces CN111, CN102 and CN101, the temperature value of the circuit is acquired, the temperature is judged according to a resistor R11, a resistor R21 and a resistor R31, and an NTC signal is output;
step 3, inputting the NTC signal into a conversion circuit, converting the NTC signal into a voltage signal and outputting the voltage signal;
step 4, the voltage signal is simultaneously input into the data analysis circuit and the fan control circuit, and the data analysis circuit compares the voltage signal and converts the voltage signal into a digital signal for output; the fan control circuit sets a voltage threshold according to the resistance curve of the temperature sensor and controls the start and stop of the fan;
and 5, receiving the digital signals output by the data analysis circuit by the gating circuit, and transmitting the maximum temperature value in the three selected three-phase silicon controlled NTC to a superior controller through a signal acquisition channel.
8. The method for collecting the temperature of the series thyristor based on the DVR of claim 7, wherein the voltage signal T-C, T-B and T-a is generated by dividing the voltage signal with the resistor R11, the resistor R21 and the resistor R31, respectively, in step 3, since the three-phase thyristor NTC is resistive, and the voltage becomes larger as the temperature increases.
9. The DVR-based series thyristor temperature acquisition method as claimed in claim 8,
in step 4, voltage signals T-C, T-B and T-A output by the conversion circuit are isolated through a diode D101, a diode D102 and a diode D103, the higher voltage in the 3 points is compared with a voltage division signal in the process of the non-inverting input end of the comparator, a resistor R4 and a resistor R114 divide the voltage, when the negative voltage of the comparator U134-D is larger than the positive voltage, the fan is controlled to rotate, and otherwise, the fan stops;
meanwhile, voltage signals T-C, T-B and T-A output by the conversion circuit are input into the data analysis circuit, the three voltage signals are converted into logic sum 1 by the comparator U134-A, the comparator U134-B and the comparator U134-C between every two voltage signals, and three digital signals D-A, D _ B and D _ C are generated.
10. The DVR series thyristor-based temperature acquisition method as claimed in claim 9, wherein the DVR series thyristor is connected with the power supply through a power supply,
the three digital signals D-A, D _ B and D _ C are connected to a decoder U104 in a gating circuit, the output port of the decoder U104 is subjected to channel distribution, and the working states of a photoelectric coupler U122, a photoelectric coupler U101 and a photoelectric coupler U102 are controlled, so that dynamic acquisition is realized, the temperature value of the three-phase silicon controlled rectifier is monitored and uploaded to an upper-level controller.
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