CN115249508B - Method for improving nonvolatile memory read interference and control system - Google Patents
Method for improving nonvolatile memory read interference and control system Download PDFInfo
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- CN115249508B CN115249508B CN202111038944.4A CN202111038944A CN115249508B CN 115249508 B CN115249508 B CN 115249508B CN 202111038944 A CN202111038944 A CN 202111038944A CN 115249508 B CN115249508 B CN 115249508B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Abstract
In the method for improving the read interference of the nonvolatile memory and the control system of the nonvolatile memory, the nonvolatile memory comprises a plurality of memory cells, and the grid electrode of each memory cell is connected with a corresponding word line; taking a memory cell with an overreading voltage applied on a word line as a target repair cell; after the data reading operation is finished, performing weak erasing operation on the generated target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line, so that weak programming effect of the data reading operation on the target repairing unit is reduced or eliminated, the occurrence probability of reading interference can be effectively restrained, the probability of correctly reading data stored in the nonvolatile memory is improved, and the readable times and the storage time of the data stored in the storage unit are increased.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method for improving read disturb of a nonvolatile memory and a control system of the nonvolatile memory.
Background
The nonvolatile memory can still maintain the stored data information under the condition of power failure, so that the nonvolatile memory is widely applied. The conventional nonvolatile memory includes a memory array in which memory cells are arranged in rows and columns, drains of the memory cells are electrically connected to corresponding Bit Lines (BL), and gates of the memory cells are electrically connected to corresponding Word Lines (WL).
Currently, in a data reading operation of a nonvolatile memory (hereinafter, may be simply referred to as a "memory"), voltages of corresponding magnitudes are applied to bit lines of memory cells or to bit lines and word lines simultaneously to identify data stored in the memory cells. Although the effect of the voltage applied to the gate of the corresponding memory cell through the word line on the data stored in the memory cell is small during a single reading, in the practical application process, when the data stored in the same block (for example, the same memory cell of the same block) is Read many times, for example, when the data needs to be Read for hundreds of thousands or millions of times, the tiny effect generated by each reading is gradually accumulated, and the data stored in the memory cell is likely to change or be abnormal, so that the Read data is inconsistent with the stored data, and an information reading error, that is, the problem of Read Disturb (Read Disturb) occurs in the nonvolatile memory.
Disclosure of Invention
The nonvolatile memory comprises a plurality of memory cells, wherein the grid electrode of each memory cell is connected with a corresponding word line, and when data reading operation is carried out on the selected memory cell, a reading voltage is applied to the word line corresponding to the selected memory cell, or a reading voltage is applied to the word line of the memory cell connected with the selected memory cell in series.
In order to reduce or inhibit the probability of the occurrence of read interference of the nonvolatile memory, the invention provides a method for improving the read interference of the nonvolatile memory and a control system of the nonvolatile memory.
In order to solve the above-mentioned problems, an aspect of the present invention provides a method for improving read disturb of a nonvolatile memory. The method for improving the read disturb of the nonvolatile memory comprises the following steps:
taking the memory cell with the overread voltage applied on the word line as a target repair cell;
and after the data reading operation is finished, performing weak erasing operation on the target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect of the data reading operation on the target repairing unit, the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite in polarity, and the repairing voltage is smaller than the erasing voltage applied by the same word line during the data erasing operation.
Optionally, after the data reading operation is finished, the method for performing the weak erasing operation on the target repair unit includes: after the single data reading operation is finished on the storage units connected with one word line, the repair voltage is applied to the target repair unit through the corresponding word line.
Optionally, after the data reading operation is finished, the method for performing the weak erasing operation on the target repair unit includes: and after the data reading operation is finished on the memory cells connected with the plurality of word lines, applying the repairing voltage to all the target repairing cells through the corresponding word lines.
Optionally, after the data reading operation is finished, the method for performing the weak erasing operation on the target repair unit includes: and after the data reading operation is finished for a plurality of times on the memory cells connected with one word line, applying the repairing voltage to the target repairing unit through the corresponding word line.
Optionally, the method for improving the read disturb of the nonvolatile memory includes:
and when the data reading operation is carried out on the nonvolatile memory, recording the address of each target repair unit and the corresponding reading voltage application times, when the reading voltage application times reach a first set value, carrying out the weak erasing operation on the corresponding target repair unit, and after the weak erasing operation is finished, zeroing the reading voltage application times of the target repair unit.
Optionally, the method for improving the read disturb of the nonvolatile memory includes:
in the nonvolatile memory, all the memory cells connected with the same word line are used as one page, when the data reading operation is carried out on the nonvolatile memory, the address of each target repair unit and the corresponding accumulated reading voltage application times are recorded, and when the accumulated reading voltage application times reach a second set value, the data erasing and the re-writing operation are carried out on all the memory cells of the page where the corresponding target repair unit is located.
Optionally, the method for improving the read disturb of the nonvolatile memory includes: during the data reading operation, the address of each target repair unit is recorded, the threshold voltages of all the target repair units are detected every set time, and when the threshold voltage of any one of all the target repair units connected by one word line is higher than a third set value, the data is erased and the re-writing operation is performed on all the target repair units connected by the word line.
Optionally, the polarity of the read voltage is the same as the polarity of the write voltage applied by the same word line when writing data, and the amplitude of the read voltage is smaller than the amplitude of the write voltage.
Optionally, the read voltage is a positive voltage, and the repair voltage is a negative voltage.
Another aspect of the present invention also provides a control system for a nonvolatile memory. The control system is used for performing data reading, data writing and data erasing operations on the nonvolatile memory. When data reading operation is carried out on the memory cells in the selected nonvolatile memory, a reading voltage is applied to the word lines corresponding to the selected memory cells, or the reading voltage is applied to the word lines of the memory cells connected in series with the selected memory cells. The control system takes the memory cell with the read voltage applied on the word line as a target repair cell; and after the data reading operation is finished, performing weak erasing operation on the target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect of the data reading operation on the target repairing unit, the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite in polarity, and the repairing voltage is smaller than the erasing voltage applied by the same word line during the data erasing operation.
Optionally, the control system includes a first recording module and a processing module. The first recording module is used for recording the address of each target repair unit and the corresponding reading voltage application times when the data reading operation is carried out on the nonvolatile memory. And when the reading voltage application times reach a first set value, the processing module applies the repairing voltage to the grid electrode of the corresponding target repairing unit through a word line, and after the current weak erasing operation is finished, the reading voltage application times of the corresponding target repairing unit are reset to zero.
Optionally, the control system further comprises a second recording module. The second recording module is used for recording the address of each target repair unit and the corresponding accumulated reading voltage application times when the data reading operation is carried out on the nonvolatile memory; when the accumulated reading voltage application times reach a second set value, the processing module erases data and rewrites all the memory cells connected by the word lines corresponding to the corresponding target repair cells.
In the method for improving the read interference of the nonvolatile memory and the control system of the nonvolatile memory, the memory cell with the read voltage applied on the word line is used as the target repair cell, and after the data read operation is finished, the generated target repair cell is subjected to the weak erase operation, in the weak erase operation, the repair voltage is applied to the grid electrode of the target repair cell through the corresponding word line, so that the weak programming effect of the data read operation on the target repair cell is reduced or eliminated, the occurrence probability of the read interference is effectively reduced or inhibited, the probability of correctly reading the data stored in the nonvolatile memory is improved, and the readable times and the storage time of the data stored in the memory cell are improved.
Drawings
FIG. 1 is a flow chart of a method for improving read disturb of a nonvolatile memory according to an embodiment of the invention.
Detailed Description
The method for improving the read disturb of the nonvolatile memory and the control system of the nonvolatile memory according to the present invention are described in further detail below with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In order to identify data stored in a nonvolatile memory, a read voltage is typically applied to a word line corresponding to a selected memory cell or a read voltage of a corresponding magnitude is applied to a word line corresponding to a memory cell connected in series to the selected memory cell, and the polarity of the applied read voltage is identical to the polarity of a write voltage applied to the same word line in a data writing (Program) operation of the nonvolatile memory, but the magnitude of the read voltage is smaller than the magnitude of the write voltage. Therefore, applying a read voltage to the gate of a corresponding memory cell through a word line when performing a data read operation is equivalent to performing a weak Program operation (Soft-Program) on the corresponding memory cell.
Although the weak programming effect of the word line applied to the gate of the corresponding memory cell is small (i.e., the effect on the data stored in the memory cell is small) during single reading, in the practical application process, the data stored in the same block (e.g., the same memory cell in the same block) may be read for hundreds of thousands or millions of times, and the weak programming effect of each reading on the memory cell may be gradually accumulated, which may possibly result in the change or abnormality of the data stored in the memory cell, and the problem of "read disturbance" may easily occur.
In order to solve the above problems, the present invention provides a method for improving the read disturb of a nonvolatile memory. Before describing the method of the nonvolatile memory read disturb, the nonvolatile memory according to the present embodiment is first described.
Specifically, the nonvolatile memory includes a plurality of memory cells, and a gate of each memory cell is connected to a corresponding one of the word lines. When data reading operation is performed on the selected memory cell, a read voltage is applied to the word line corresponding to the selected memory cell, or a read voltage is applied to the word line of the memory cell connected in series with the selected memory cell. In the nonvolatile memory, all the memory cells connected to the same word line are used as one page, and each page has a corresponding page address.
The method for improving the read disturb of the nonvolatile memory of the present embodiment includes: taking the memory cell with the overread voltage applied on the word line as a target repair cell; after the data reading operation is finished, performing a weak erasing operation on the target repairing unit, wherein in the weak erasing operation, a repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect (namely, reduce or eliminate influence of the reading operation on the stored data of the target repairing unit) generated by the data reading operation on the target repairing unit, the polarities of the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite, and the repairing voltage is smaller than an erasing voltage applied by the same word line during the data erasing operation, so that the repairing voltage can be prevented from erasing the data stored in the target repairing unit.
The target repair unit may be a selected memory cell during a data read operation, or may be another memory cell connected in series with the selected memory cell, so long as the memory cell to which the read voltage is applied to the corresponding word line during the data read operation is used as the target repair unit. In this embodiment, after the single data reading period is completed, a repair voltage may be applied to the target repair unit; the repair voltage may be applied to the target repair cell after the end of the plurality of data reading periods.
Specifically, after the single data reading operation is finished for each pair of memory cells connected to one word line, that is, after the data reading operation corresponding to the single data reading period is finished, or after the single data reading operation is finished for each pair of page addresses, the repair voltage is applied to the target repair unit through the corresponding word line. Or after the data reading operation is finished on the memory cells connected with the plurality of word lines, that is, after the data reading operation is finished on the plurality of page addresses, the repair voltage can be applied to all the target repair cells through the corresponding word lines. Or after the data reading operation is finished for a plurality of times on the memory cells connected with one word line, namely after the data reading operation is finished for a plurality of times on a page address, the repair voltage can be applied to the target repair cell through the corresponding word line.
It should be noted that, according to the data reading instruction, a single or multiple data reading operations may be performed on the memory cells connected to a plurality of word lines, or multiple data reading operations may be performed on the memory cells connected to one word line. As an example, after the data read operation corresponding to the single data read instruction is finished, a repair voltage may be applied to the gate of each of the target repair units through the word line corresponding to each of the target repair units, respectively, to perform a weak erase operation on the generated target repair unit.
In this embodiment, the read voltage and the write voltage applied by the same word line during data writing have the same polarity, and the magnitude of the read voltage is smaller than the magnitude of the write voltage. For example, the read voltage and the write voltage are positive voltages, and the repair voltage and the erase voltage are negative voltages. When performing a weak erase operation on a target repair cell, a bit line corresponding to the target repair cell may be applied with a negative voltage or suspended.
In this embodiment, the amplitude and the application time of the repair voltage may be adjusted so that the repair voltage may reduce or eliminate weak programming effect of the data reading operation on the target repair cell. That is, the weak erase effect of the repair voltage on the target repair cell can be made comparable to the weak program effect of the read operation on the target repair cell by adjusting the amplitude and the application time of the repair voltage. The specific amplitude and the application frequency of the repair voltage can be set according to practical situations, and the embodiment is not limited.
To avoid taking up the operating time of the non-volatile memory, a repair voltage may be applied to the corresponding target repair cell in the memory during the idle time (i.e., non-write and read times) of the non-volatile memory.
FIG. 1 is a flow chart of a method for improving read disturb of a nonvolatile memory according to an embodiment of the invention. As shown in fig. 1, the method for improving the read disturb of the nonvolatile memory may include: when the data reading operation is performed on the nonvolatile memory, the address of each target repair unit and the corresponding reading voltage application times can be recorded, when the reading voltage application times reach a first set value, weak erasing operation is performed on the corresponding target repair unit (after the data reading operation is finished), and after the weak erasing operation is finished, the reading voltage application times of the corresponding target repair unit are reset to zero so as to record the subsequent reading voltage application times of the target repair unit. The first setting value may be set according to actual situations, which is not limited in this embodiment.
Referring to fig. 1, the method of improving nonvolatile memory read disturb may further include: when the data reading operation is performed on the nonvolatile memory, the address of each target repair unit and the corresponding accumulated reading voltage application times can be recorded, and when the accumulated reading voltage application times reach a second set value, data updating (Refresh) is performed on all memory units of a page where the corresponding target repair unit is located, namely, data erasing and re-writing operation are performed on all memory units of the page where the corresponding target repair unit is located, so that the accuracy of data storage in the nonvolatile memory is improved and the probability of generating reading interference is reduced. It should be noted that, when the accumulated read voltage application number of the target repair unit does not exceed the second set value, the data stored in the target repair unit is not failed. The second set value may be set according to actual situations, which is not limited in this embodiment. In this embodiment, after the current data reading operation is finished, data may be updated for all the memory cells of the page where the target repair cell whose accumulated number of times of application of the read voltage reaches the second set value is located.
The method for improving nonvolatile memory read disturb may further include: during the data reading operation, the address of each target repair unit is recorded, the threshold voltages of all the target repair units are detected every set time, and when the threshold voltage of any one of all the target repair units connected by one word line is higher than a third set value, the data is erased and the re-writing operation is performed (after the current data reading operation is finished) on all the target repair units connected by the word line.
The embodiment also provides a control system of the nonvolatile memory. The control system may implement the method of improving non-volatile memory read disturb as described above.
The nonvolatile memory comprises a plurality of memory cells, and the grid electrode of each memory cell is connected with a corresponding word line. The control system is used for performing data reading, data writing and data erasing operation on the nonvolatile memory, and when performing data reading operation on the selected memory cell, a reading voltage is applied to a word line corresponding to the selected memory cell, or a reading voltage is applied to a word line of a memory cell connected with the selected memory cell in series. The control system takes the memory cell with the read voltage applied on the word line as a target repair cell; and after the data reading operation is finished, performing weak erasing operation on the target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect of the data reading operation on the target repairing unit, the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite in polarity, and the repairing voltage is smaller than the erasing voltage applied by the same word line during the data erasing operation.
Specifically, the control system may include a processing module and a first recording module. After the data reading operation corresponding to the single data reading instruction is finished, the processing module can apply the repairing voltage to the generated grid electrode of the target repairing unit through the corresponding word line respectively so as to reduce or eliminate the weak programming effect of the data reading operation on the target repairing unit.
When the nonvolatile memory is subjected to data reading operation, the first recording module can record the address of each target repair unit and the corresponding reading voltage application times. And when the reading voltage application times reach a first set value, the processing module applies the repairing voltage to the corresponding target repairing unit through a word line, and after the current weak erasing operation is finished, the reading voltage application times of the corresponding target repairing unit are reset to zero.
The control system of the present embodiment may further include a second recording module. When the data reading operation is performed on the nonvolatile memory, the second recording module can record the address of each target repair unit and the corresponding accumulated reading voltage application times, and when the accumulated reading voltage application times reach a second set value, the processing module performs data erasing and re-writing operation on all the memory units connected by the word lines corresponding to the corresponding target repair units. Or, when the accumulated reading voltage application times reach the second set value, the processing module erases data and rewrites all the memory cells of the page where the corresponding target repair unit is located.
In the method for improving the read interference of the nonvolatile memory and the control system of the nonvolatile memory, the memory cell with the read voltage applied on the word line is used as the target repair cell, and after the data read operation is finished, the generated target repair cell is subjected to the weak erase operation, in the weak erase operation, the repair voltage is applied to the grid electrode of the target repair cell through the corresponding word line, so that the weak programming effect of the data read operation on the target repair cell is reduced or eliminated, the influence of the data read operation on the storage charge of the storage medium of the nonvolatile memory can be reduced or eliminated, the occurrence probability of the read interference can be effectively restrained, the probability of correctly reading the data stored in the nonvolatile memory is improved, and the readable times and the storage time of the data stored in the memory cell are improved.
It should be noted that, the embodiments of the present application are described in a progressive manner, and the systems described below focus on the differences from the methods described above, and the same and similar points between the respective parts are referred to each other. The control system of the nonvolatile memory disclosed by the embodiment corresponds to the method for improving the read interference of the nonvolatile memory disclosed by the embodiment, so that the description is simpler, and the relevant points are only referred to the description of the method section.
The foregoing description is only illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the claims, and any person skilled in the art may make any possible variations and modifications to the technical solution of the present invention using the method and technical content disclosed above without departing from the spirit and scope of the invention, so any simple modification, equivalent variation and modification made to the above embodiments according to the technical matter of the present invention fall within the scope of the technical solution of the present invention.
Claims (10)
1. A method of improving read disturb of a nonvolatile memory, the nonvolatile memory including a plurality of memory cells, and a gate of each of the memory cells being connected to a corresponding one of word lines, a read voltage being applied to the corresponding word line of a selected memory cell when a data read operation is performed on the selected memory cell, or a read voltage being applied to the word line of a memory cell connected in series with the selected memory cell, the method comprising:
taking the memory cell with the overread voltage applied on the word line as a target repair cell, wherein the target repair cell is the selected memory cell or a memory cell connected with the selected memory cell in series;
and after the data reading operation is finished, performing weak erasing operation on the target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect of the data reading operation on the target repairing unit, the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite in polarity, and the repairing voltage is smaller than the erasing voltage applied by the same word line during the data erasing operation.
2. The method of claim 1, wherein the method of performing a weak erase operation on the target repair cell after the data read operation is completed comprises:
after the single data reading operation is finished on the storage units connected with one word line, the repair voltage is applied to the target repair unit through the corresponding word line.
3. The method of claim 1, wherein the method of performing a weak erase operation on the target repair cell after the data read operation is completed comprises:
and after the data reading operation is finished on the memory cells connected with the plurality of word lines, applying the repairing voltage to all the target repairing cells through the corresponding word lines.
4. The method of claim 1, wherein the method of performing a weak erase operation on the target repair cell after the data read operation is completed comprises:
and after the data reading operation is finished for a plurality of times on the memory cells connected with one word line, applying the repairing voltage to the target repairing unit through the corresponding word line.
5. The method of claim 3 or 4, wherein the method of improving non-volatile memory read disturb comprises:
and when the data reading operation is carried out on the nonvolatile memory, recording the address of each target repair unit and the corresponding reading voltage application times, when the reading voltage application times reach a first set value, carrying out the weak erasing operation on the corresponding target repair unit, and after the weak erasing operation is finished, zeroing the reading voltage application times of the target repair unit.
6. The method of claim 3 or 4, wherein the method of improving non-volatile memory read disturb comprises:
in the nonvolatile memory, all the memory cells connected with the same word line are used as one page, when the data reading operation is carried out on the nonvolatile memory, the address of each target repair unit and the corresponding accumulated reading voltage application times are recorded, and when the accumulated reading voltage application times reach a second set value, the data erasing and the re-writing operation are carried out on all the memory cells of the page where the corresponding target repair unit is located.
7. The method of claim 3 or 4, wherein the method of improving non-volatile memory read disturb comprises:
during the data reading operation, the address of each target repair unit is recorded, the threshold voltages of all the target repair units are detected every set time, and when the threshold voltage of any one of all the target repair units connected by one word line is higher than a third set value, the data is erased and the re-writing operation is performed on all the target repair units connected by the word line.
8. A control system of a nonvolatile memory, the nonvolatile memory including a plurality of memory cells, and a gate of each of the memory cells being connected to a corresponding one of word lines, the control system being configured to perform data reading, data writing, and data erasing operations on the nonvolatile memory, to apply a read voltage to a word line corresponding to a selected memory cell when performing a data reading operation on the selected memory cell, or to apply a read voltage to a word line of a memory cell connected in series with the selected memory cell,
the control system takes the storage unit with the overread voltage applied on the word line as a target repair unit, wherein the target repair unit is the selected storage unit or a storage unit connected with the selected storage unit in series;
and after the data reading operation is finished, performing weak erasing operation on the target repairing unit, wherein in the weak erasing operation, repairing voltage is applied to the grid electrode of the target repairing unit through a corresponding word line so as to reduce or eliminate weak programming effect of the data reading operation on the target repairing unit, the repairing voltage and the reading voltage applied by the same word line during the data reading operation are opposite in polarity, and the repairing voltage is smaller than the erasing voltage applied by the same word line during the data erasing operation.
9. The control system of claim 8, wherein the control system comprises a first recording module and a processing module:
the first recording module is used for recording the address of each target repair unit and the corresponding reading voltage application times when the data reading operation is carried out on the nonvolatile memory;
and when the reading voltage application times reach a first set value, the processing module applies the repairing voltage to the grid electrode of the corresponding target repairing unit through a word line, and after the current weak erasing operation is finished, the reading voltage application times of the corresponding target repairing unit are reset to zero.
10. The control system of claim 9, further comprising:
the second recording module is used for recording the address of each target repair unit and the corresponding accumulated reading voltage application times when the data reading operation is carried out on the nonvolatile memory;
when the accumulated reading voltage application times reach a second set value, the processing module erases data and rewrites all the memory cells connected by the word lines corresponding to the corresponding target repair cells.
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| US9620233B1 (en) * | 2016-06-30 | 2017-04-11 | Sandisk Technologies Llc | Word line ramping down scheme to purge residual electrons |
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| CN110945590A (en) * | 2019-10-23 | 2020-03-31 | 长江存储科技有限责任公司 | Method for reading three-dimensional flash memory |
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